TWI561459B - Selective etching of a matrix comprising silver nano wires - Google Patents

Selective etching of a matrix comprising silver nano wires

Info

Publication number
TWI561459B
TWI561459B TW101139804A TW101139804A TWI561459B TW I561459 B TWI561459 B TW I561459B TW 101139804 A TW101139804 A TW 101139804A TW 101139804 A TW101139804 A TW 101139804A TW I561459 B TWI561459 B TW I561459B
Authority
TW
Taiwan
Prior art keywords
matrix
selective etching
silver nano
nano wires
wires
Prior art date
Application number
TW101139804A
Other languages
English (en)
Chinese (zh)
Other versions
TW201323319A (zh
Inventor
Werner Stockum
Oliver Doll
Ingo Koehler
Christian Matuschek
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of TW201323319A publication Critical patent/TW201323319A/zh
Application granted granted Critical
Publication of TWI561459B publication Critical patent/TWI561459B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H10F71/1385—Etching transparent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/826—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/236—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Surface Treatment Of Glass (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • ing And Chemical Polishing (AREA)
  • Catalysts (AREA)
TW101139804A 2011-10-27 2012-10-26 Selective etching of a matrix comprising silver nano wires TWI561459B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP11008621.2A EP2587564A1 (en) 2011-10-27 2011-10-27 Selective etching of a matrix comprising silver nanowires or carbon nanotubes

Publications (2)

Publication Number Publication Date
TW201323319A TW201323319A (zh) 2013-06-16
TWI561459B true TWI561459B (en) 2016-12-11

Family

ID=46968144

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101139804A TWI561459B (en) 2011-10-27 2012-10-26 Selective etching of a matrix comprising silver nano wires

Country Status (11)

Country Link
US (1) US9379326B2 (enExample)
EP (2) EP2587564A1 (enExample)
JP (1) JP2015501541A (enExample)
KR (1) KR20140085563A (enExample)
CN (1) CN103907216A (enExample)
BR (1) BR112014009871A2 (enExample)
IN (1) IN2014KN01122A (enExample)
PH (1) PH12014500612A1 (enExample)
SG (1) SG11201401650UA (enExample)
TW (1) TWI561459B (enExample)
WO (1) WO2013060409A1 (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9199870B2 (en) 2012-05-22 2015-12-01 Corning Incorporated Electrostatic method and apparatus to form low-particulate defect thin glass sheets
US10464172B2 (en) 2013-02-21 2019-11-05 Nlight, Inc. Patterning conductive films using variable focal plane to control feature size
CN105122387B (zh) 2013-02-21 2019-01-11 恩耐公司 非烧蚀性激光图案化
US9842665B2 (en) 2013-02-21 2017-12-12 Nlight, Inc. Optimization of high resolution digitally encoded laser scanners for fine feature marking
CN105144346B (zh) 2013-02-21 2017-12-15 恩耐公司 多层结构的激光刻图
EP2830110A1 (en) * 2013-07-22 2015-01-28 Heraeus Precious Metals GmbH & Co. KG Patterning of a composition comprising silver nanowires
JP2016539467A (ja) * 2013-11-08 2016-12-15 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 銀ナノ材料を含む透明な伝導性マトリクスの構築方法
US10069271B2 (en) 2014-06-02 2018-09-04 Nlight, Inc. Scalable high power fiber laser
US10618131B2 (en) 2014-06-05 2020-04-14 Nlight, Inc. Laser patterning skew correction
KR102209680B1 (ko) * 2014-06-27 2021-01-29 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법
US9482477B2 (en) 2014-07-28 2016-11-01 Northrop Grumman Systems Corporation Nano-thermal agents for enhanced interfacial thermal conductance
US10310201B2 (en) 2014-08-01 2019-06-04 Nlight, Inc. Back-reflection protection and monitoring in fiber and fiber-delivered lasers
CN105374696B (zh) * 2014-08-05 2018-08-28 上海蓝沛信泰光电科技有限公司 一种利用激光刻蚀制备透明金属引线结构的方法
KR102254561B1 (ko) * 2014-09-30 2021-05-21 동우 화인켐 주식회사 은 나노 와이어의 식각액 조성물
KR102323848B1 (ko) * 2014-09-30 2021-11-09 동우 화인켐 주식회사 은 나노 와이어의 식각액 조성물
US9296614B1 (en) 2014-11-12 2016-03-29 Corning Incorporated Substrate such as for use with carbon nanotubes
US9837783B2 (en) 2015-01-26 2017-12-05 Nlight, Inc. High-power, single-mode fiber sources
CN106155429A (zh) * 2015-03-25 2016-11-23 联想(北京)有限公司 电子设备、触控部件及其设置方法
US10050404B2 (en) 2015-03-26 2018-08-14 Nlight, Inc. Fiber source with cascaded gain stages and/or multimode delivery fiber with low splice loss
US10829605B2 (en) 2015-07-02 2020-11-10 Sabic Global Technologies B.V. Process and material for growth of adsorbed compound via nanoscale-controlled resistive heating and uses thereof
WO2017008022A1 (en) 2015-07-08 2017-01-12 Nlight, Inc. Fiber with depressed central index for increased beam parameter product
CN104962919B (zh) * 2015-07-31 2017-09-22 合肥银派科技有限公司 一种银纳米线的刻蚀液及刻蚀方法
US9447504B1 (en) * 2015-09-28 2016-09-20 Xerox Corporation Method of etching using inkjet printing
US10434600B2 (en) 2015-11-23 2019-10-08 Nlight, Inc. Fine-scale temporal control for laser material processing
US10074960B2 (en) 2015-11-23 2018-09-11 Nlight, Inc. Predictive modification of laser diode drive current waveform in order to optimize optical output waveform in high power laser systems
US11179807B2 (en) 2015-11-23 2021-11-23 Nlight, Inc. Fine-scale temporal control for laser material processing
US10295820B2 (en) 2016-01-19 2019-05-21 Nlight, Inc. Method of processing calibration data in 3D laser scanner systems
JP7221579B2 (ja) * 2016-03-22 2023-02-14 富士電機株式会社 樹脂組成物
US10730785B2 (en) 2016-09-29 2020-08-04 Nlight, Inc. Optical fiber bending mechanisms
US10732439B2 (en) 2016-09-29 2020-08-04 Nlight, Inc. Fiber-coupled device for varying beam characteristics
US10295845B2 (en) 2016-09-29 2019-05-21 Nlight, Inc. Adjustable beam characteristics
CN107068412B (zh) * 2016-12-08 2018-10-16 常州大学 一种高功率的长线性超级电容器及其制备方法
EP3607389B1 (en) 2017-04-04 2023-06-07 Nlight, Inc. Optical fiducial generation for galvanometric scanner calibration
US10614928B2 (en) 2017-04-17 2020-04-07 Philippe Hansen-Estruch Biodegradable flexible lightweight energy storage composite and methods of making the same
CN109835867B (zh) * 2017-11-24 2023-07-14 中芯国际集成电路制造(上海)有限公司 刻蚀溶液和刻蚀方法
CN109045368A (zh) * 2018-07-04 2018-12-21 郑州大学第附属医院 一种医用高强度高韧性可吸收复合生物材料
CN110444632A (zh) * 2019-07-08 2019-11-12 绵阳金能移动能源有限公司 一种采用石墨烯导电膜制备柔性太阳电池前电极的方法
WO2021050791A1 (en) * 2019-09-10 2021-03-18 Washington University Compositions of conductive polymers and methods for making and using same
CN112185608B (zh) * 2020-10-28 2021-11-30 碳星科技(天津)有限公司 一种新型双层导电网络结构的柔性透明电极及其制备方法
CN114517094B (zh) * 2020-11-20 2023-08-22 苏州阿特斯阳光电力科技有限公司 一种丝网印刷电化学刻蚀用浆料及其制备方法和应用

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110253668A1 (en) * 2010-03-23 2011-10-20 Cambrios Technologies Corporation Etch patterning of nanostructure transparent conductors

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1378947A1 (en) * 2002-07-01 2004-01-07 Interuniversitair Microelektronica Centrum Vzw Semiconductor etching paste and the use thereof for localised etching of semiconductor substrates
WO2008046058A2 (en) * 2006-10-12 2008-04-17 Cambrios Technologies Corporation Nanowire-based transparent conductors and applications thereof
US8018568B2 (en) * 2006-10-12 2011-09-13 Cambrios Technologies Corporation Nanowire-based transparent conductors and applications thereof
DE102006051952A1 (de) * 2006-11-01 2008-05-08 Merck Patent Gmbh Partikelhaltige Ätzpasten für Siliziumoberflächen und -schichten
JP2008159923A (ja) * 2006-12-25 2008-07-10 Sharp Corp 有機薄膜トランジスタ製造用蒸着用マスク、これを用いた有機薄膜トランジスタの製造方法、有機薄膜トランジスタ
TWI374859B (en) * 2008-05-28 2012-10-21 Ind Tech Res Inst Photo energy transformation catalysts and methods for fabricating the same
WO2010022849A2 (de) * 2008-09-01 2010-03-04 Merck Patent Gmbh Randentschichtung von dünnschicht-solar-modulen mittels ätzen
WO2010093779A1 (en) * 2009-02-12 2010-08-19 Optera, Inc. Plastic capacitive touch screen and method of manufacturing same
KR20120003874A (ko) * 2009-03-30 2012-01-11 도레이 카부시키가이샤 도전막 제거제 및 도전막 제거 방법
CN102498188B (zh) * 2009-09-18 2014-09-17 默克专利股份有限公司 喷墨可印刷的蚀刻油墨及相关方法
US8809112B2 (en) 2010-05-21 2014-08-19 Merck Patent Gmbh Selectively etching of a carbon nano tubes (CNT) polymer matrix on a plastic substructure
US20120291836A1 (en) * 2010-11-17 2012-11-22 E.I. Du Pont De Nemours And Company Array of thin-film photovoltaic cells having an etchant-resistant electrode an an integrated bypass diode associated with a plurality of cells and a panel incorporating the same
US20140021400A1 (en) * 2010-12-15 2014-01-23 Sun Chemical Corporation Printable etchant compositions for etching silver nanoware-based transparent, conductive film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110253668A1 (en) * 2010-03-23 2011-10-20 Cambrios Technologies Corporation Etch patterning of nanostructure transparent conductors

Also Published As

Publication number Publication date
WO2013060409A1 (en) 2013-05-02
TW201323319A (zh) 2013-06-16
CN103907216A (zh) 2014-07-02
BR112014009871A2 (pt) 2017-04-18
US20140291287A1 (en) 2014-10-02
KR20140085563A (ko) 2014-07-07
SG11201401650UA (en) 2014-05-29
JP2015501541A (ja) 2015-01-15
EP2771919A1 (en) 2014-09-03
PH12014500612A1 (en) 2014-04-28
EP2587564A1 (en) 2013-05-01
IN2014KN01122A (enExample) 2015-10-16
US9379326B2 (en) 2016-06-28

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