SG10201504891QA - Manufacturing a flexible structure by transfers of layers - Google Patents
Manufacturing a flexible structure by transfers of layersInfo
- Publication number
- SG10201504891QA SG10201504891QA SG10201504891QA SG10201504891QA SG10201504891QA SG 10201504891Q A SG10201504891Q A SG 10201504891QA SG 10201504891Q A SG10201504891Q A SG 10201504891QA SG 10201504891Q A SG10201504891Q A SG 10201504891QA SG 10201504891Q A SG10201504891Q A SG 10201504891QA
- Authority
- SG
- Singapore
- Prior art keywords
- transfers
- layers
- manufacturing
- flexible structure
- flexible
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/10—Removing layers, or parts of layers, mechanically or chemically
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/02—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
- Y10T428/24967—Absolute thicknesses specified
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Laminated Bodies (AREA)
- Micromachines (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1162086A FR2984597B1 (en) | 2011-12-20 | 2011-12-20 | FABRICATION OF A SOFT STRUCTURE BY LAYER TRANSFER |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201504891QA true SG10201504891QA (en) | 2015-07-30 |
Family
ID=47263201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201504891QA SG10201504891QA (en) | 2011-12-20 | 2012-12-06 | Manufacturing a flexible structure by transfers of layers |
Country Status (8)
Country | Link |
---|---|
US (1) | US9427948B2 (en) |
EP (1) | EP2608252B1 (en) |
JP (1) | JP6220516B2 (en) |
KR (1) | KR102096818B1 (en) |
CN (1) | CN103177935B (en) |
FR (1) | FR2984597B1 (en) |
SG (1) | SG10201504891QA (en) |
TW (1) | TWI598238B (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3007892B1 (en) * | 2013-06-27 | 2015-07-31 | Commissariat Energie Atomique | METHOD FOR TRANSFERRING A THIN LAYER WITH THERMAL ENERGY SUPPLY TO A FRAGILIZED AREA VIA AN INDUCTIVE LAYER |
CN104064175B (en) * | 2014-07-10 | 2017-05-10 | 中国科学院电子学研究所 | Bionic noise-reduction membrane |
WO2017201602A1 (en) * | 2015-09-11 | 2017-11-30 | Spectral Devices Inc. | Methods for production and transfer of patterned thin films at wafer-scale |
KR102340066B1 (en) | 2016-04-07 | 2021-12-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Peeling method and manufacturing method of flexible device |
EP3993018A1 (en) | 2017-07-14 | 2022-05-04 | Sunedison Semiconductor Limited | Method of manufacture of a semiconductor on insulator structure |
FR3073083B1 (en) * | 2017-10-31 | 2019-10-11 | Soitec | METHOD FOR MANUFACTURING A FILM ON A FLEXIBLE SHEET |
CN108010834A (en) * | 2017-11-22 | 2018-05-08 | 电子科技大学 | A kind of flexible unitary film and its preparation and transfer method |
FR3102608B1 (en) | 2019-10-28 | 2021-09-24 | Commissariat Energie Atomique | A thin film transfer process using a charged preceramic polymer |
US11377758B2 (en) * | 2020-11-23 | 2022-07-05 | Stephen C. Baer | Cleaving thin wafers from crystals |
CN115867105A (en) * | 2023-02-27 | 2023-03-28 | 青禾晶元(天津)半导体材料有限公司 | Method for synchronously preparing two composite piezoelectric substrates |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL88823C (en) | 1951-07-30 | |||
FR2748851B1 (en) * | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | PROCESS FOR PRODUCING A THIN FILM OF SEMICONDUCTOR MATERIAL |
US6054363A (en) * | 1996-11-15 | 2000-04-25 | Canon Kabushiki Kaisha | Method of manufacturing semiconductor article |
SG54593A1 (en) * | 1996-11-15 | 1998-11-16 | Canon Kk | Method of manufacturing semiconductor article |
JP4044236B2 (en) * | 1999-03-11 | 2008-02-06 | 株式会社東芝 | Manufacturing method of semiconductor device |
US6566158B2 (en) * | 2001-08-17 | 2003-05-20 | Rosemount Aerospace Inc. | Method of preparing a semiconductor using ion implantation in a SiC layer |
JP2003229548A (en) * | 2001-11-30 | 2003-08-15 | Semiconductor Energy Lab Co Ltd | Vehicle, display device and method for manufacturing semiconductor device |
US20040224482A1 (en) * | 2001-12-20 | 2004-11-11 | Kub Francis J. | Method for transferring thin film layer material to a flexible substrate using a hydrogen ion splitting technique |
JP2005158934A (en) * | 2003-11-25 | 2005-06-16 | Seiko Epson Corp | Composite semiconductor substrate, method of manufacturing the same, electrooptical device, substrate therefor, and electronic equipment |
US20060177971A1 (en) * | 2004-01-13 | 2006-08-10 | Jsr Corporation | Anisotropically conductive connector, production process thereof and application product thereof |
US20060240275A1 (en) * | 2005-04-25 | 2006-10-26 | Gadkaree Kishor P | Flexible display substrates |
EP1798764A1 (en) | 2005-12-14 | 2007-06-20 | STMicroelectronics S.r.l. | Process for manufacturing wafers usable in the semiconductor industry |
US7598153B2 (en) * | 2006-03-31 | 2009-10-06 | Silicon Genesis Corporation | Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species |
FR2910179B1 (en) * | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING THIN LAYERS OF GaN BY IMPLANTATION AND RECYCLING OF A STARTING SUBSTRATE |
JP5245380B2 (en) * | 2007-06-21 | 2013-07-24 | 信越半導体株式会社 | Manufacturing method of SOI wafer |
JP5437626B2 (en) * | 2007-12-28 | 2014-03-12 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method of semiconductor device |
EP2157602A1 (en) * | 2008-08-20 | 2010-02-24 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | A method of manufacturing a plurality of fabrication wafers |
JP5389627B2 (en) * | 2008-12-11 | 2014-01-15 | 信越化学工業株式会社 | Manufacturing method of composite substrate with wide band gap semiconductor laminated |
AU2011245293B2 (en) * | 2010-04-30 | 2014-06-19 | Second Sight Medical Products, Inc. | Improved biocompatible bonding method |
FR2961515B1 (en) * | 2010-06-22 | 2012-08-24 | Commissariat Energie Atomique | METHOD FOR PRODUCING A MONOCRYSTALLINE SILICON THIN LAYER ON A POLYMER LAYER |
-
2011
- 2011-12-20 FR FR1162086A patent/FR2984597B1/en active Active
-
2012
- 2012-12-06 EP EP12195967.0A patent/EP2608252B1/en active Active
- 2012-12-06 SG SG10201504891QA patent/SG10201504891QA/en unknown
- 2012-12-18 US US13/718,037 patent/US9427948B2/en active Active
- 2012-12-18 KR KR1020120148302A patent/KR102096818B1/en active IP Right Grant
- 2012-12-19 TW TW101148354A patent/TWI598238B/en active
- 2012-12-20 CN CN201210560671.4A patent/CN103177935B/en active Active
- 2012-12-20 JP JP2012278640A patent/JP6220516B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20130156989A1 (en) | 2013-06-20 |
JP6220516B2 (en) | 2017-10-25 |
FR2984597A1 (en) | 2013-06-21 |
FR2984597B1 (en) | 2016-07-29 |
CN103177935A (en) | 2013-06-26 |
CN103177935B (en) | 2017-06-16 |
KR102096818B1 (en) | 2020-04-03 |
EP2608252A1 (en) | 2013-06-26 |
TWI598238B (en) | 2017-09-11 |
JP2013131760A (en) | 2013-07-04 |
EP2608252B1 (en) | 2018-04-18 |
US9427948B2 (en) | 2016-08-30 |
TW201332772A (en) | 2013-08-16 |
KR20130071381A (en) | 2013-06-28 |
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