TWI552337B - 電晶體 - Google Patents
電晶體 Download PDFInfo
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- TWI552337B TWI552337B TW104101833A TW104101833A TWI552337B TW I552337 B TWI552337 B TW I552337B TW 104101833 A TW104101833 A TW 104101833A TW 104101833 A TW104101833 A TW 104101833A TW I552337 B TWI552337 B TW I552337B
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- 239000000463 material Substances 0.000 claims description 176
- 239000004065 semiconductor Substances 0.000 claims description 175
- 229910052732 germanium Inorganic materials 0.000 claims description 26
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 26
- 239000003989 dielectric material Substances 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 23
- 238000010276 construction Methods 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 4
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 239000010955 niobium Substances 0.000 claims 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 2
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 5
- 238000003491 array Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 1
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- IGPFOKFDBICQMC-UHFFFAOYSA-N 3-phenylmethoxyaniline Chemical compound NC1=CC=CC(OCC=2C=CC=CC=2)=C1 IGPFOKFDBICQMC-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- FSIONULHYUVFFA-UHFFFAOYSA-N cadmium arsenide Chemical compound [Cd].[Cd]=[As].[Cd]=[As] FSIONULHYUVFFA-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- IAOQICOCWPKKMH-UHFFFAOYSA-N dithieno[3,2-a:3',2'-d]thiophene Chemical compound C1=CSC2=C1C(C=CS1)=C1S2 IAOQICOCWPKKMH-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- -1 etc.) Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- CXXKWLMXEDWEJW-UHFFFAOYSA-N tellanylidenecobalt Chemical compound [Te]=[Co] CXXKWLMXEDWEJW-UHFFFAOYSA-N 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- AFNRRBXCCXDRPS-UHFFFAOYSA-N tin(ii) sulfide Chemical compound [Sn]=S AFNRRBXCCXDRPS-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
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- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Description
本發明係關於電晶體、記憶體陣列及半導體構造。
電晶體通常用於積體電路中且貫穿記憶體、邏輯等等可具有諸多應用。例如,電晶體可用於電阻式隨機存取記憶體(RRAM)陣列、動態隨機存取記憶體(DRAM)陣列等等中。
積體電路製造之一持續目標係創造較高位準的整合,且因此減小既有組件之尺寸及間隔。歸因於較小之通道效應及其他複雜性,減小電晶體之尺寸變得越來越難。
電晶體效能之特性可在於度量眾多,包含(例如)驅動電流(即,流經導通狀態之電晶體之電流(Ion))。在一些應用中,將需發展相對於習知電晶體具有一或多個經改良度量(例如,增強驅動電流)的電晶體。
本申請案揭示一種半導體構造,其包括:一第一半導體材料;一第二半導體材料,其在該第一半導體材料上,且歸因於該第一及該第二半導體材料之不同晶格特性具有接近該第一半導體材料的一應變區域;一電晶體閘極,其向下延伸至該第二半導體材料中;閘極介電材料,其係沿著該電晶體閘極之側壁及一底部;源極/汲極區域,其等係沿著該電晶體閘極之該等側壁,該閘極介電材料係介於該等源極
/汲極區域與該電晶體閘極之間;且其中一通道區域在該等源極/汲極區域之間延伸且處於該電晶體閘極之該底部下方,該通道區域之至少一些處於該應變區域內。
本申請案揭示一種半導體構造,其包括:一第一半導體材料;一第二半導體材料,其鄰近該第一半導體材料,且歸因於該第一及該第二半導體材料之不同晶格特性具有接近該第一半導體材料的一應變區域;一電晶體閘極,其延伸至該第二半導體材料中;該第二半導體材料之一中介區域,其係介於該電晶體閘極之一底部與該第一半導體材料之間;該中介區域之一整體由該應變區域涵蓋;閘極介電材料,其係沿著該電晶體閘極之側壁及該底部;源極/汲極區域,其等係沿著該電晶體閘極之該等側壁,且藉由該閘極介電材料與該電晶體閘極隔開;該等源極/汲極區域延伸至該第二半導體材料中至至少大約等於該電晶體閘極在該第二半導體材料內之一深度的一深度;且其中一通道區域在該等源極/汲極區域之間延伸且處於該電晶體閘極之該底部下方。
本申請案揭示一種半導體構造,其包括:一第一半導體材料;一第二半導體材料,其在該第一半導體材料上且沿著一界面結合該第一半導體材料;歸因於該第一及該第二半導體材料之不同晶格特性,該第二半導體材料接近該界面之一區域具有應變;一電晶體閘極,其延伸至該第二半導體材料中;該第二半導體材料之一中介區域,其係介於該電晶體閘極之一底部與該第一半導體材料之間;該中介區域之一整體由該應變區域涵蓋;閘極介電材料,其係沿著該電晶體閘極之側壁及該底部;源極/汲極區域,其等係沿著該電晶體閘極之該等側壁,且藉由該閘極介電材料與該電晶體閘極隔開;該等源極/汲極區域延伸至該第二半導體材料中至小於該電晶體閘極在該第二半導體材料內之一深度的一深度;且其中一通道區域在該等源極/汲極區域之
間延伸且處於該電晶體閘極之該底部下方。
10‧‧‧構造
10a‧‧‧構造
10b‧‧‧構造
10c‧‧‧構造
12‧‧‧半導體基座
14‧‧‧凹入電晶體
14a‧‧‧電晶體
14b‧‧‧電晶體
14c‧‧‧電晶體
16‧‧‧第一半導體材料
17‧‧‧梯度
18‧‧‧第二半導體材料
19‧‧‧界面
20‧‧‧凹槽
22‧‧‧電晶體閘極
24‧‧‧閘極材料
25‧‧‧頂面
26‧‧‧絕緣材料
27‧‧‧底面/底部
28‧‧‧閘極介電材料
29‧‧‧側壁表面/側壁
30‧‧‧中介區域
31‧‧‧虛線/源極/汲極區域之底部
32‧‧‧源極/汲極區域
34‧‧‧源極/汲極區域
36‧‧‧導電區域
38‧‧‧第一導電材料
40‧‧‧第二導電材料
42‧‧‧通道區域
60‧‧‧陣列
61‧‧‧源極/汲極區域
圖1至圖4係半導體構造之包括例示性實施例電晶體之區域的概略橫截面圖。
圖5A及圖5B分別係一例示性實施例記憶體陣列之一區域的一概略橫截面側視圖及一概略俯視圖。圖5A係沿著圖5B之橫截面b-b’。
一些實施例包含具有在應變半導體材料內延伸之通道區域的電晶體。應變半導體材料可改良通道區域內之電子移動性且藉此改良驅動電流。電晶體可用於存取裝置中,且在一些實施例中,可用於埋藏凹入存取裝置(BRAD)中。參考圖1至圖5描述例示性實施例。
參考圖1,一構造10包括支撐於一半導體基座12上之一凹入電晶體14。
基座12可包括半導體材料,且可(例如)包括單晶矽、基本上由或由單晶矽組成。在一些實施例中,基座12可被視為包括一半導體基板。術語「半導體基板」意謂包括半導電材料之任意構造,包含但不限於諸如一半導電晶圓之塊狀半導電材料(其係單獨的或在包括其他材料之總成中)及半導電材料層(其係單獨的或在包括其他材料之總成中)。術語「基板」指代任意支撐結構,包含但不限於上文所描述之半導體基板。在一些實施例中,基座12可對應於含有與積體電路製造相關之一或多種材料的一半導體基板。該等材料之一些可處於基座12之所展示區域下方及/或可橫向鄰近基座12之所展示區域;且可對應於(例如)耐火金屬材料、障壁材料、擴散材料、絕緣體材料等等之一或多者。
一第一半導體材料16形成於基座12上,且一第二半導體材料18形成於該第一半導體材料上。該第一及該第二半導體材料彼此不同,
且在所展示之實施例中,沿著一界面19結合。歸因於第一及第二半導體材料之不同晶格特性,在接近界面19之半導體材料中引發應變。應變區域可跨自界面19向外延伸之一體積散佈。特定言之,應變區域可向上延伸一實質距離至第二半導體材料18中,且亦可向下延伸至第一半導體材料16中。術語「應變區域」用以指代含有因材料16與18之間之晶格失配引發的應變之區域。此等應變區域可(例如)相對於材料16及18結合之界面延伸20nm或更多至半導體材料18中。
在一些實施例中,第二半導體材料18可包括矽、基本上由或由矽組成;且第一半導體材料16可包括選自週期表之IV族除矽以外的元素(例如,碳、鍺等等)。在一些實施例中,第一半導體材料16可包括與來自週期表之IV族的一或多個其他元素組合之矽;且可(例如)包括與碳及鍺之一或二者組合之矽。例如,第一半導體材料可包括Si(1-x)Gex、基本上由或由Si(1-x)Gex組成;其中x處在自大約0.2至大約0.5之一範圍內。
在其中第一半導體材料16包括與來自週期表之IV族的一或多種其他材料組合之矽的實施例中,且在其中第二半導體材料18包括矽之實施例中,第一半導體材料可包括貫穿其整體矽對其他組分之一單一均勻比率,或可包括矽濃度相對於其他組分之濃度的一梯度。例如,在一些實施例中,第一半導體材料16可包括與碳及鍺之一或二者組合之矽,且矽之濃度可沿著一梯度17減小使得相較於材料16內之較深處,接近界面19處存在一更低之矽濃度。此可使得能夠針對特定應用自訂應變特性。
第一及第二半導體材料16及18可包括任意合適之材料;且在一些實施例中,第一半導體材料16可包括一II/V族混合物(例如,磷化鎘、砷化鎘、磷化鋅等等)、一II/VI族混合物(例如,硒化鎘、硫化鎘、硒化鋅、碲化鋅等等)或一IV/VI族混合物(例如,硒化鉛(II族)、
硫化錫、碲化鉈鍺等等);且第二半導體材料18可包括一不同混合物,或可包括矽、基本上由或由矽組成。
第一半導體材料16可包括任意合適之厚度,且在一些實施例中可具有小於大約2μm之一厚度;諸如,例如處在自大約1μm至大約2μm之一範圍內的一厚度。
一凹槽20延伸至第二半導體材料18中。一電晶體閘極22係在此凹槽之底部上,且可被視為向下延伸至第二半導體材料18中。該電晶體閘極包括一閘極材料24。該閘極材料可包括任意合適之組合物或組合物之組合;且在一些實施例中可包括以下項之一或多者、基本上由或由以下項之一或多者組成:各種金屬(例如,鎢、鈦等等)、含有金屬之組合物(例如,金屬氮化物、金屬碳化物、金屬矽化物等等)及導電性摻雜半導體材料(例如,導電性摻雜矽、導電性摻雜鍺等等)。
一電絕緣材料26係在凹槽20內且處於閘極22上。絕緣材料26可包括任意合適之組合物或組合物之組合;且在一些實施例中可包括氮化矽、基本上由或由氮化矽組成。
閘極22可被視為包括鄰近絕緣材料26之一頂面25、與頂面呈相對關係之一底面27及側壁表面29。
閘極介電材料28沿著閘極22之底面27及側壁表面29延伸。在所展示之實施例中,閘極介電材料亦沿著絕緣材料26之側壁表面延伸;但在其他實施例中,閘極介電材料可僅係沿著閘極22之表面。
閘極22可係一字線之部分,該字線相對於圖1之橫截面視圖向頁面內與頁面外延伸。
閘極22之底部27可被視為處於半導體材料18之一中介區域30上,其中此中介區域係介於閘極與第一半導體材料16之間。中介區域可(例如)具有處在自大約10nm至大約20nm之一範圍內的一厚度。由材料16及18之晶格失配引發的應變可傳播完全穿過中介區域30。
源極/汲極區域32及34係沿著閘極22之側壁,且藉由閘極介電材料28與閘極隔開。源極/汲極區域可對應於半導體材料18之導電性摻雜區域,且使用虛線31概略圖解說明源極/汲極區域之底部。源極/汲極區域之底部可係其中摻雜劑濃度減少至低於與源極/汲極區域相關而非突變梯級之位準的一位準之擴散邊界。儘管兩個源極/汲極區域係展示為延伸至大約彼此相同之深度,然在其他實施例中源極/汲極區域可相對於彼此延伸至不同深度。
在圖1之實施例中,源極/汲極區域延伸至大約等於閘極22在半導體材料18內之一深度的一深度。在其他實施例中,如下文參考圖2至圖4更詳細所討論,源極/汲極區域可相對於閘極22之深度延伸至不同深度。
圖1展示源極/汲極區域32及34上之導電區域36。在所繪示之實施例中,此等導電區域包括一第一導電材料38及一第二導電材料40。導電材料38可包括(例如)金屬矽化物(例如,矽化鈦、矽化鈷等等),且導電材料40可包括金屬(例如,鎢、鈦等等)或含有金屬之組合物(例如,金屬碳化物、金屬氮化物等等)。導電區域36可用於形成至源極/汲極區域32及34之電接觸,且在其他實施例中可用任意其他合適之結構替代。
一通道區域42在源極/汲極區域32與34之間延伸,且處於電晶體閘極22之底部下方。由材料16及18之晶格失配所引發之應變可至少部分跨中介區域30延伸,且特定言之可至少部分跨通道區域延伸。此可使得能夠增強跨通道區域之電子移動性,其可使得電晶體14能夠具有比習知電晶體更高之驅動電流。在一些實施例中,通道區域42之一整體可處於應變半導體材料內。
在一些例示性實施例(例如,其中第二半導體材料18包括矽且第一半導體材料16包括Si(1-x)Gex(其中,例如x處於自大約0.2至大約0.5
之一範圍內)的實施例)中,可使用壓電電阻係數計算跨中介區域30之應變:
在上文方程式中,μe(xx)、μ0、Sxx、Syy及Szz分別係x軸中具有應變之電子移動性、無應力之電子移動性及沿著x軸、y軸及z軸之通道應力。該方程式提供給n型金屬氧化物半導體場效應電晶體(MOSFET)以輔助閱讀者瞭解本發明,且將不限制本發明之任何態樣,若有限制,除非在下文之申請專利範圍中明確陳述此方程式。一x軸及z軸之定向係相對於圖1之構造展示。
圖1之實施例之一優勢在於電子在通道區域42內主要沿著x軸方向遷移,且不具有沿著z軸方向之實質遷移。因此,中介區域30內之應變對於通道區域內之電子移動性可具有實質影響。
通道區域42多數可經摻雜為與源極/汲極區域32及34相反之一類型。例如,通道區域42可係一p型摻雜區域且源極/汲極區域32及34可係n型摻雜區域。在一些實施例中,通道區域42可經摻雜至一臨限電壓(VT)植入位準,且源極/汲極區域32及34可經摻雜至輕微摻雜擴散(LDD)植入位準。
圖1之實施例包括一電晶體,其中源極/汲極區域具有與一電晶體閘極之一底部大約共同延伸之底面。圖2展示一構造10a,其圖解說明其中源極/汲極區域之底部延伸至電晶體閘極之底部下方的一替代性實施例。特定言之,圖2展示具有源極/汲極區域32及34之一電晶體14a,該等源極/汲極區域32及34在半導體材料18內延伸之深度大於電晶體閘極22。在一些實施例中,中介區域30可具有處於自大約10nm至大約20nm之一範圍內的一厚度,且源極/汲極區域32及34可延伸至比閘極22之深度大處於自大約5nm至大約10nm之一範圍內的一量之
一深度。因此,源極/汲極區域32及34可延伸至係中介區域30之厚度的四分之三、係中介區域30之厚度的二分之一等等之一深度。
在圖2之實施例中,通道區域42可完全處於半導體材料18的一應變區域內,且通道區域內之電子移動性可係主要沿著x軸方向。因此,可充分實現上文參考圖1所描述之優勢以實現高驅動電流。
圖3展示另一例示性實施例電晶體。特定言之,圖3展示包括具有深度不及閘極22之源極/汲極區域32及34之一電晶體14b的一構造10b。該電晶體14b包括一通道區域42,該通道區域42部分處於中介區域30內且沿著閘極22之底部27,但亦沿著閘極22之側壁29的最低部分延伸。相對於圖1及圖2之電晶體14及14a,電晶體14b可具有兩個缺點。首先,通道區域42之一些可延伸超過半導體材料18之一應變區域。特定言之,半導體材料18之應變區域可涵蓋中介區域30,但可或可不延伸直至所圖解說明之源極/汲極區域32及34的底部邊界。若通道區域之一些處於半導體材料18的應變區域外部,則可僅藉由半導體材料18之應變區域內之通道區域的部分而非藉由通道區域之整體來實現應變半導體材料內之增強電子移動性的優勢。電晶體14b之一第二缺點在於沿著z軸方向且沿著x軸方向存在實質電子遷移,且相較於圖1及圖2之其中電子遷移主要沿著x軸方向的電晶體14及14a,此可減少增強電子移動性之優勢。
儘管兩個源極/汲極區域係展示為延伸至一彼此相同之深度,然在其他實施例中源極/汲極區域可相對於彼此延伸至不同深度。例如,源極/汲極區域之一者可延伸至至少等於電晶體閘極之一深度的一深度,且另一者可延伸至小於電晶體閘極之一深度的一深度。因此,通道區域可不對稱,其中通道區域之一側沿著閘極之一側壁延伸(如同圖3之實施例)且另一側不沿著一側壁延伸(如同圖1或圖2之實施例)。此等非對稱通道區域可具有介於圖3之實施例與圖1及圖2之實施
例中間的性質及特性(例如,應變區域引發之驅動電流增強)。
即使相對於圖1及圖2之實施例,圖3之電晶體14b可具有缺點,然相對於習知電晶體,電晶體14b可仍具有增強驅動電流,且因此可仍係適於在一些應用中利用之一經改良裝置。
在一些實施例中,可修改跨半導體材料16之一上表面的形貌使得在其中源極/汲極區域延伸之深度不及一電晶體之閘極的實施例中,通道區域之整體係處於應變材料中。例如,圖4展示包括與圖3之電晶體14b相似之一電晶體14c的一構造10c,其中電晶體14c之源極/汲極區域32及34延伸的深度與閘極22不同。然而,界面19經組態以具有一容器形狀。此容器形狀與閘極沿著底部27且沿著側壁29之最低段的一外周邊互補。因此,通道42係容器形,且嵌套於界面19之容器形組態內。
在所展示之實施例中,通道區域42沿著側壁29之最低段與沿著閘極22之底部27具有一實質上一致之厚度,但在其他實施例中沿著側壁29具有與沿著閘極之底部27不同的一厚度。
在一些實施例中,可貫穿通道區域之整體,且特定言之貫穿通道區域沿著側壁29之部分且貫穿沿著閘極22之底部27的部分,保持通道區域42內之應變實質上一致。因此,高電子移動性可完全貫穿通道區域42延伸,且即使源極/汲極區域32及34之深度不及閘極22,圖4之電晶體14c的驅動電流仍可與圖1及圖2之實施例的驅動電流相當。
在一些應用中,可將上文所描述之電晶體實施例併入記憶體陣列(諸如,例如RRAM陣列、DRAM陣列等等)中。圖5A及圖5B展示一例示性陣列60,該陣列60包括上文參考圖1所描述之類型的複數個實質上相同之電晶體14,(其中術語「實質上相同」意謂在合理製造及量測容限內,電晶體相同)。將源極/汲極區域標記為圖5A中之區域61,且與圖1之區域32/34相同。
在所展示之實施例中,一些電晶體係「主動」電晶體且與電荷儲存裝置電耦合;且其他者用於隔離區域。隔離區域用以使一些鄰近主動電晶體彼此隔離。位元線(未展示)可電耦合至主動電晶體之源極/汲極區域的一些。主動電晶體之閘極22可係沿著字線,該等字線相對於圖5A之橫截面向頁面內與頁面外延伸。如在圖5B之俯視圖中所展示,淺溝渠隔離(STI)在正交於包括主動及隔離電晶體之溝渠的溝渠內延伸。
可將上文所討論之裝置及結構併入電子系統中。此等電子系統可用於(例如)記憶體模組、裝置驅動器、電力模組、通信數據機、處理器模組及專用模組中,且可包含多層、多晶片模組。電子系統可係一廣泛範圍之系統(諸如,例如時鐘、電視、行動電話、個人電腦、汽車、工業控制系統、飛機等等)中之任一者。
除非另有指定,否則可使用現已知或尚待發展的任意合適之方法(包含,例如原子層沈積(ALD)、化學氣相沈積(CVD)、物理氣相沈積(PVD)等等)形成本文所描述之各種材料、物質、組合物等等。
術語「介電」及「電絕緣」兩者皆用以描述具有絕緣電性質之材料。在本發明中兩個術語被視為同義。在一些例項中利用術語「介電」,且在其他例項中利用術語「電絕緣」以在本發明內提供語言變化以簡化下文之申請專利範圍內之先行基礎,且非用以指示任何明顯化學或電差異。
各項實施例在圖式中之特定定向係僅為達圖解說明的目的,且在一些應用中實施例可相對於所展示之定向旋轉。本文所提供之描述、及下文之申請專利範圍係關於各個特徵之間具有所描述的關係之任意結構,無論結構是否處於附圖之特定定向中或相對於此定向旋轉。
隨附圖解說明之橫截面視圖僅展示橫截面之平面內的特徵,且
不展示橫截面之平面後的材料以簡化圖式。
當一結構在上文中被稱作在另一結構「上」或「抵靠」另一結構時,其可直接在該另一結構上或亦可存在中介結構。相比之下,當一結構被稱作「直接在另一結構上」或「直接抵靠另一結構」時,不存在中介結構。當一結構被稱作「連接」或「耦合」至另一結構時,其可直接連接或耦合至該另一結構,或可存在中介結構。相比之下,當一結構被稱作「直接連接」或「直接耦合」至另一結構時,不存在中介結構。
一些實施例包含一半導體構造,該半導體構造包括一第二半導體材料,該第二半導體材料在一第一半導體材料上,且歸因於第一及第二半導體材料之不同晶格特性具有接近第一半導體材料的一應變區域。一電晶體閘極向下延伸至第二半導體材料中。閘極介電材料係沿著電晶體閘極之側壁及一底部。源極/汲極區域係沿著電晶體閘極之側壁,且閘極介電材料係介於源極/汲極區域與電晶體閘極之間。一通道區域在源極/汲極區域之間延伸且處於電晶體閘極之底部下方。通道區域之至少一些在應變區域內。
一些實施例包含一半導體構造,該半導體構造包括鄰近一第二半導體材料之一第一半導體材料。歸因於第一及第二半導體材料之不同晶格特性,第二半導體材料具有一應變區域。一電晶體閘極延伸至第二半導體材料中。第二半導體材料之一中介區域係介於電晶體閘極的一底部與第一半導體材料之間。中介區域之一整體由應變區域涵蓋。閘極介電材料係沿著電晶體閘極之側壁及底部。源極/汲極區域係沿著電晶體閘極之側壁及底部,且藉由閘極介電材料與電晶體閘極隔開。源極/汲極區域延伸至第二半導體材料中至至少等於電晶體閘極在第二半導體材料內之一深度的一深度。一通道區域在源極/汲極區域之間延伸且處於電晶體閘極之底部下方。
一些實施例包含一半導體構造,該半導體構造包括一第一半導體材料及沿著一界面結合該第一半導體材料之一第二半導體材料。歸因於第一及第二半導體材料之不同晶格特性,第二半導體材料接近界面的一區域具有應變。一電晶體閘極延伸至第二半導體材料中。第二半導體材料之一中介區域係介於電晶體閘極的一底部與第一半導體材料之間。中介區域之一整體由應變區域涵蓋。閘極介電材料係沿著電晶體閘極之側壁及底部。源極/汲極區域係沿著電晶體閘極之側壁,且藉由閘極介電材料與電晶體閘極隔開。源極/汲極區域延伸至第二半導體材料中至小於電晶體閘極在第二半導體材料內之一深度的一深度。一通道區域在源極/汲極區域之間延伸且處於電晶體閘極之底部下方。
10‧‧‧構造
12‧‧‧半導體基座
14‧‧‧凹入電晶體
16‧‧‧第一半導體材料
17‧‧‧梯度
18‧‧‧第二半導體材料
19‧‧‧界面
20‧‧‧凹槽
22‧‧‧電晶體閘極
24‧‧‧閘極材料
25‧‧‧頂面
26‧‧‧絕緣材料
27‧‧‧底面/底部
28‧‧‧閘極介電材料
29‧‧‧側壁表面/側壁
30‧‧‧中介區域
31‧‧‧虛線/源極/汲極區域之底部
32‧‧‧源極/汲極區域
34‧‧‧源極/汲極區域
36‧‧‧導電區域
38‧‧‧第一導電材料
40‧‧‧第二導電材料
42‧‧‧通道區域
Claims (33)
- 一種半導體構造,其包括:一第一半導體材料;一第二半導體材料,其在該第一半導體材料上且歸因於該第一及該第二半導體材料之不同晶格特性具有接近該第一半導體材料的一應變區域;一電晶體閘極,其向下延伸至該第二半導體材料中;閘極介電材料,其係沿著該電晶體閘極之側壁及一底部;源極/汲極區域,其等係沿著該電晶體閘極之該等側壁,該閘極介電材料係介於該等源極/汲極區域與該電晶體閘極之間;且其中一通道區域在該等源極/汲極區域之間延伸且處於該電晶體閘極之該底部下方,該通道區域之至少一些係在該應變區域內。
- 如請求項1之構造,其中該等源極/汲極區域在該第二半導體材料內延伸至大約彼此相同之一深度。
- 如請求項1之構造,其中該等源極/汲極區域在該第二半導體材料內之深度至少與該閘極相同。
- 如請求項1之構造,其中該等源極/汲極區域在該第二半導體材料內之深度大於該閘極。
- 如請求項1之構造,其中該等源極/汲極區域在該第二半導體材料內之深度不及該閘極。
- 如請求項5之構造,其中該通道區域係容器形且沿著該等電晶體閘極側壁之最低段且沿著該電晶體閘極之該底部延伸;且其中該第一半導體材料與該第二半導體材料結合之一界面經組態為容器形,其中該容器形通道區域嵌套於該容器形界面內。
- 如請求項1之構造,其中該第一半導體材料包括鍺且該第二半導體材料包括矽。
- 如請求項1之構造,其中該第一半導體材料包括鍺及矽之一混合物,且其中該第二半導體材料包括矽。
- 如請求項1之構造,其中該第一半導體材料包括鍺及碳之一混合物,且其中該第二半導體材料包括矽。
- 如請求項1之構造,其中該第一半導體材料包括一II/VI族混合物、一IV/VI族混合物或一II/V族混合物。
- 如請求項10之構造,其中該第二半導體材料包括矽。
- 如請求項1之構造,其中該通道區域係p型摻雜且該等源極/汲極區域係n型摻雜。
- 如請求項1之構造,其中該通道區域之一整體處於該應變區域內。
- 如請求項1之構造,其中僅該通道區域之一部分處於該應變區域內。
- 如請求項1之構造,其中該電晶體閘極及該等源極/汲極區域一起構成一電晶體,且其中此電晶體係一記憶體陣列內諸多實質上相同之電晶體的一者。
- 一種半導體構造,其包括:一第一半導體材料;一第二半導體材料,其鄰近該第一半導體材料,且歸因於該第一及該第二半導體材料之不同晶格特性具有接近該第一半導體材料的一應變區域;一電晶體閘極,其延伸至該第二半導體材料中;該第二半導體材料之一中介區域,其係介於該電晶體閘極之一底部與該第一半導體材料之間;該中介區域之一整體由該應 變區域涵蓋;閘極介電材料,其係沿著該電晶體閘極之側壁及該底部;源極/汲極區域,其等係沿著該電晶體閘極之該等側壁,且藉由該閘極介電材料與該電晶體閘極隔開;該等源極/汲極區域延伸至該第二半導體材料中至至少大約等於該電晶體閘極在該第二半導體材料內之一深度的一深度;且其中一通道區域在該等源極/汲極區域之間延伸且處於該電晶體閘極之該底部。
- 如請求項16之構造,其中該等源極/汲極區域之該深度大約等於該電晶體閘極之該深度。
- 如請求項16之構造,其中該等源極/汲極區域之該深度大於該電晶體閘極之該深度。
- 如請求項18之構造,其中該中介區域在該電晶體閘極之該底部與該第一半導體材料之一頂部之間具有處於自大約10奈米至大約20奈米的一範圍內之一厚度,且其中該等源極/汲極區域在該電晶體閘極之該底部下方的深度處於自大約5奈米至大約10奈米之一範圍內。
- 如請求項16之構造,其中該第一半導體材料包括鍺且該第二半導體材料包括矽。
- 如請求項16之構造,其中該第一半導體材料包括鍺及矽之一混合物,且其中該第二半導體材料包括矽。
- 如請求項21之構造,其中該第一半導體材料包括矽濃度相對於鍺濃度之一梯度,且其中越接近該第二半導體材料該矽濃度越小。
- 如請求項21之構造,其中該第一半導體材料包括貫穿其整體矽對鍺之一單一均勻比率。
- 如請求項23之構造,其中該第一半導體材料包括Si(1-x)Gex;其中x處於自大約0.2至大約0.5之一範圍內。
- 如請求項16之構造,其中該第一半導體材料包括鍺及碳之一混合物,且其中該第二半導體材料包括矽。
- 一種半導體構造,其包括:一第一半導體材料;一第二半導體材料,其在該第一半導體材料上且沿著一界面結合該第一半導體材料;歸因於該第一及該第二半導體材料之不同晶格特性,該第二半導體材料接近該界面之一區域具有應變;一電晶體閘極,其延伸至該第二半導體材料中;該第二半導體材料之一中介區域,其介於該電晶體閘極之一底部與該第一半導體材料之間;該中介區域之一整體由該應變區域涵蓋;閘極介電材料,其係沿著該電晶體閘極之側壁與該底部;源極/汲極區域,其等係沿著該電晶體閘極之該等側壁,且藉由該閘極介電材料與該電晶體閘極隔開;該等源極/汲極區域延伸至該第二半導體材料中至小於該電晶體閘極在該第二半導體材料內之一深度的一深度;且其中一通道區域在該等源極/汲極區域之間延伸且處於該電晶體閘極之該底部下方。
- 如請求項26之構造,其中該通道區域係容器形且沿著該等電晶體閘極側壁之最低段且沿著該電晶體閘極之該底部延伸;且其中該界面亦係容器形,其中該容器形通道區域嵌套於該容器形界面內。
- 如請求項27之構造,其中該通道區域沿著該閘極之該等側壁與 沿著該閘極之該底部的一厚度係實質上一致。
- 如請求項26之構造,其中該第二半導體材料包括矽。
- 如請求項29之構造,其中該第一半導體材料包括鍺及矽之一混合物。
- 如請求項29之構造,其中該第一半導體材料包括鍺及碳之一混合物。
- 如請求項29之構造,其中該第一半導體材料包括一II/VI族混合物、一IV/VI族混合物或一II/V族混合物。
- 如請求項26之構造,其中該通道之一區域係沿著該電晶體閘極的最低段且不在該應變區域內。
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