TWI548485B - 具有平坦化尖端之化學機械研磨墊修整器及其相關方法 - Google Patents
具有平坦化尖端之化學機械研磨墊修整器及其相關方法 Download PDFInfo
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- TWI548485B TWI548485B TW102118308A TW102118308A TWI548485B TW I548485 B TWI548485 B TW I548485B TW 102118308 A TW102118308 A TW 102118308A TW 102118308 A TW102118308 A TW 102118308A TW I548485 B TWI548485 B TW I548485B
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- 230000008023 solidification Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Description
本發明係關於一種化學機械研磨墊修整器及其相關方法,尤指一種適用於一種具有平坦化尖端之化學機械研磨墊修整器及其相關方法。
本發明係主張於2013年3月13日所提出之美國專利申請案號第13/802,112號及於2013年5月23日所提出之美國專利申請案號第13/479,148號之優先權,且其所揭示之內容均併入本發明以供參考。
迄今,半導體工業每年花費超過十億美元製造必須具有非常平坦且光滑表面之矽晶圓。已有許多的技術用以製造光滑且具平坦表面之矽晶圓。其中最常見的製程稱為化學機械研磨(CMP),其包括一結合研磨液之研磨墊之使用。在所有CMP製程中最重要的是於研磨晶圓的均勻度、IC線路的光滑性、產率之移除速率、CMP經濟性之消耗品壽命等方面實現高性能程度。
本發明揭示提供修整化學機械研磨墊之有效方法。這樣的一種方法可提供:下壓一化學機械研磨墊修整器對著一化學機械研磨墊,該修整器包括一單層超研磨顆粒,係為複數個超研磨顆粒突出於一基質層。該單層超研磨顆粒之最高突出尖端與第2個最高突出尖端之突出距離差異為小於或等於約10微米,以及且該單層超研磨顆粒之最高10個突出尖端之突出距離差異為約20微米或更小。該方法可更包括旋轉對著該化學機械研磨墊之該修整器,使得切割出該具有一最大切割深度約60微米之化學機械研磨墊的粗糙度。在另一態樣中,當旋轉該修整器時,該複數個超研磨顆粒之至少100個尖端切入粗糙化該化學機械研磨墊。在另一態樣中,當旋轉該修整器時,該複數個超研磨顆粒之至少50個尖端切入粗糙化該化學機械研磨墊。在又一態樣中,當旋轉該修整器時,該複數個超研磨顆粒之至少25個尖端切入粗糙化該化學機械研磨墊。
此外,在一態樣中,實質上該所有粗糙度係藉由設置位於該修整器周圍區域的超研磨顆粒在該化學機械研磨墊上切割出。在一具體態樣中,該周圍區域從該修整器之外邊緣往內朝向該修整器之中心點延伸直至該修整器半徑之約90%。在另一具體態樣中,該周圍區域從該修整器之外邊緣往內朝向該修整器之中心點延伸直至該修整器半徑之約50%。在又另一具體態樣中,該周圍區域從該修整器之外邊緣往內朝向該修整器之中心點延伸直至該修整器半徑之約
33%。此外,在某些態樣中,實質上該全部超研磨顆粒設置在該修整器之周圍區域上。在另一態樣中,實質上該全部超研磨顆粒以預定圖案均勻排列在該修整器之周圍區域上。
該方法可更包括在該化學機械拋光墊及被拋光工件間的相互作用。舉例來說,在一態樣中,該方法可包括:旋轉該化學機械研磨墊;施加一研磨液體於該旋轉中化學機械研磨墊之該拋光表面上;以及施加一工件於該拋光表面,使得藉由與該研磨液結合之粗糙化而拋光該工件。在一態樣中,該工件係一半導體元件。在另一態樣中,該半導體元件含有一層或多層的銅、鎢、一氧化物層、或其組合。在又另一態樣中,該半導體元件可具有一小於或等於28奈米的節點尺寸。在更一態樣中,該半導體元件可具有一小於或等於約30奈米的線寬。在又更一態樣中,該半導體元件可含有一具有尺寸大於400微米之晶圓。此外,在一些態樣中,該研磨液可包括一磨料,例如,二氧化矽、氧化鋁、二氧化鈰及其組合。在另一態樣中,該研磨液可包括一氧化化合物。
以上係廣泛地概述本發明各種特徵,而以下係更詳述描述使更能了解本發明,而更可理解本發明技術之優越處。本發明之其他特徵將於以下伴隨著申請專利範圍更詳細描述,或可透過具體實施而學習本發明。
100‧‧‧化學機械研磨墊修整器
102‧‧‧單層複數個超研磨顆粒
104‧‧‧基質層
106‧‧‧突出距離差異
108‧‧‧最高突出尖端
110‧‧‧次高突出尖端
202‧‧‧下壓一化學機械研磨墊修整器對著一化學機械研磨墊
204‧‧‧該修整器包括一單層超研磨顆粒,係為複數個超研磨顆粒突出於一基質層,其中,該單層超研磨顆粒之最高突出尖端與第2個最高突出尖端之突出距離差異為小於或等於約10微米,以及且該單層超研磨顆粒之最高10個突出尖端之突出距離差異為約20微米或更小
206‧‧‧旋轉對著該化學機械研磨墊之該修整器,使得切割出該具有一最大切割深度約60微米之化學機械研磨墊的粗糙度
302‧‧‧旋轉該化學機械研磨墊
304‧‧‧施加一研磨液體於該旋轉中化學機械
研磨墊之該拋光表面上
306‧‧‧施加一工件於該拋光表面,使得藉由與該研磨液結合之粗糙化而拋光該工件
402,502,602,702‧‧‧第一單層超研磨顆粒
404,504,604,704‧‧‧金屬支撐層
406,506,606,706‧‧‧第二單層超研磨顆粒
508‧‧‧結合材料
708‧‧‧剛性支撐層
圖1係根據本發明實施例之化學機械研磨墊修整器之示意圖。
圖2係根據本發明實施例之顯示修整化學機械研磨墊之方法步驟之流程圖。
圖3係根據本發明實施例之顯示修整化學機械研磨墊之方法步驟之流程圖。
圖4係根據本發明實施例之化學機械研磨墊修整器之示意圖。
圖5係根據本發明實施例之化學機械研磨墊修整器之示意圖。
圖6係根據本發明實施例之化學機械研磨墊修整器之示意圖。
圖7係根據本發明實施例之化學機械研磨墊修整器之示意圖。
應瞭解的是,本發明之圖示僅為解說目的之用,以更進一步了解本發明。再者,以上圖例未按比例繪製,因此尺寸、顆粒大小、及其他態樣可擴大至使圖示清晰呈現。因此,為了製備本發明可根據圖例所示之特定尺寸及態樣變化得之。
在揭露及敘述本發明前,應了解本發明不限於在此所揭示之該特定結構、方法步驟、或材料,而可擴大延伸至其相等物,如該些具有通常相關習知技術者可推之。並
且,應了解在此所用之術語僅用於描述特定實施例,而非侷限本發明。
應注意的是,本發明之說明書及所附申請專利範圍中,單數形式的「一(a、an)」及「該(the)」包括複數個所指示對象,除非文中另有特別指示。因此,例如關於「一鑽石顆粒」,其包括一個或多個此顆粒;以及關於「該層」,其包括一層或多層。
定義
在本發明之描述及申請專利範圍中,使用根據如下文所定義之專門用語。
在在本文中,「修整器(conditioner)」及「修整器(dresser)」可互相交替使用,且意指用於修整或研磨一墊的工具。例如一化學機械研磨墊。
在本文中,「修整片段」一詞是指一化學機械研磨墊之修整器或修整元件。修整片段於本發明中係用於承載具有平坦化尖端之超研磨顆粒。超研磨顆粒可藉由將多種修整片段組合併入一化學機械研磨墊修整器。應注意到,在此將討論將修整片段接合至基材之各種技術,以及將超研磨顆粒接合至修整片段之各種技術。應了解,所有各種接合機制於此都可相互交換使用,意即,在此所討論之一將修整片段接合至一基材之方法,該被討論之接合方法也可用於接合一超研磨顆粒至一修整片段。任何特定之化學機械研磨墊修整器都可作為討論,然而,應了解將超
研磨顆粒接合至修整片段之方法可不同或相同於將修整片段接合至研磨墊修整器基材之方法。
在本文中,「超研磨顆粒(superabrasive)」用作為意指任何結晶或多晶材料、或具有莫氏硬度(Mohr’s hardness)為8或以上之混合材料。在一些態樣中,一材料可為莫氏硬度約為9.5或以上。此類材料包括,如鑽石(diamond)、多晶鑽石(polycrystalline diamond(PCD))、立方氮化硼(cubic boron nitride(cBN))、多晶立方氮化硼(polycrystalline cubic boron nitride(PcBN))、剛玉(corundum)及藍寶石(sapphire),以及所屬技術領域中具有通常知識者已知之其他超研磨材料,但不限於此。超研磨材料可包含本發明中各種形式的態樣,其包括顆粒(particles)、砂礫(grits)、薄膜(films)、層狀物(layers)、片狀物(pieces)、片段(segments)等。在某些例子中,本發明之超研磨材料係為多晶超研磨材料,如PCD及PcBN材料。
在本文中,「有機材料」一詞是指為一半固化或固化複合物或一有機化合物之混合物。「有機材料層」及「有機基質」可能可相互交換使用且意指為一半固化或固化複合物或有機化合物(包括樹脂、聚合物、膠等)之混合物之層或塊。該有機材料可為一來自一種或多種單體聚合而成之聚合物或共聚物。在某些例子中,此有機材料可為一黏著劑。
在本文中,「硬焊」方法一詞是指為在該超研磨顆粒/材料之碳原子及硬焊材料間建立之化學鍵結。此外,
「化學鍵結」意指一共價鍵結,如碳化或硼化鍵結,而非機械力或較弱的原子間吸引力。因此,當「硬焊」用於連結超研磨顆粒時,會形成一真實的化學鍵結。然而,當「硬焊」用於連結金屬對金屬鍵結,其係用於更傳統意義上的冶金結合。因此,在一超研磨片段硬焊至一工件本體時,碳化形成物的存在並不是必須的。
在本文中,「顆粒」意指鑽石顆粒之連結,及意指鑽石之顆粒形式。此顆粒可為各種形狀,其包括圓形、橢圓形、正方形、自形(euhedral)等,且可為單晶或多晶,並可具有各種篩孔尺寸。本技術領域中所習知之「篩孔(mesh)」意指每單位面積所具有的孔洞數目,如美國篩孔(U.S.meshes)為例。本文中所有篩孔大小意指美國篩孔(U.S.meshes),除非有另行註解,皆指美國篩孔大小。再者,由於具有某「篩孔大小」之顆粒實際上係具有一小的尺寸分佈範圍,因此篩孔大小係指所收集得到的顆粒的平均篩孔尺寸。
在本文中,「尖銳部位」一詞是指一結晶上可能包括之任何狹窄部,包括但不限於菱角(corners)、脊部(ridges)、邊緣、方尖塔(obelisks)及其他突出。在一些態樣中,「尖銳部位」可包括一破碎、削切、裂痕、鋸齒及其類似之部位。在一些態樣中,尖銳部位」可包括一破碎、削切、裂痕、鋸齒及其類似之部位。在某些態樣中,在於顆粒之於二面以上之匯聚處、或設置於晶型或物體上之交叉面上,形成菱角及/或尖端。於其他態樣中,在於顆粒之
二面或至少二面之匯聚處、或設置於晶型或物體上之交叉面上,可形成菱角及/或尖端。在某些態樣中,「尖銳部位」可包括一部分,其為破碎的、切片的、有裂痕的、參差不齊的及類似情況。於某些態樣中,尖銳程度可與藉由所考慮之顆粒、晶格或是其他物體之位置上所形成之幾何角度有所關聯。於某些態樣中,可考慮90度或以下之一角度為尖銳。於其他態樣中,可考慮60度或以下之一角度為尖銳。
又於其他態樣中,考慮45度或以下、或是30度或以下之一角度為尖銳。
在本文中,「周圍設置」、「周圍區域」及其類似詞是指任何修整器之顆粒設置於一源自於一修整器之前緣或外緣並往中心向內延伸約至修整器之半徑約90%之區域。在某些態樣中,該區域可能由約半徑之約20%至90%向內延伸。在本發明之另一態樣中,該區域可能延伸至半徑之約50%。在本發明之又一態樣中,該區域可能延伸至約修整器之半徑之約33%(即相距中心處66%)。
在本文中,「工作超研磨顆粒」為於一修整(dressing)或修整(conditioning)過程中接觸化學機械研磨墊之超級顆粒。此接觸可以從表面移除碎屑,可使表面是彈性變形或是塑性變形,或是可切割表面以產生一溝槽。在一具體態樣中,工作超級顆粒可於一修整過程中切割深入一化學機械研磨墊超過約10微米。
在本文中,「非工作超研磨顆粒」為在一化學機械研磨墊修整器中的超研磨顆粒,其沒有明顯地接觸該
研磨墊使其從該表面移除碎屑、變形該表面,切割該表面以產生一溝槽。
在本文中,「過度侵略性超研磨顆粒」為在一化學機械研磨墊修整器中的超研磨顆粒,其侵略地修整(dress)或修整(condition)化學機械研磨墊。在一態樣中,侵略性超研磨顆粒為於一修整過程中切割深入一化學機械研磨墊超過約50微米之超研磨顆粒。在另一態樣中,侵略性超研磨顆粒為從化學機械研磨墊移除至少五分之一物質之超研磨顆粒。在又另一態樣中,侵略性超研磨顆粒為從化學機械研磨墊移除至少二分之一物質之超研磨顆粒。
在本文中,「指示基材」(indicator substrate)一詞係指一基材物質,化學機械研磨墊修整器之一部分超研磨顆粒可由其定位,並移動使其標示工作超研磨顆粒。
在本文中,「標記圖案」(marking pattern)一詞係指藉由移動超研磨顆粒以於一指示基材上形成一圖案。
此標記可為任何已知可檢測的標記,其包括:刻痕、刮痕、凹陷、及材料沉積(例如,色素標記、化學標記、螢光標記、放射性標記等)。
在本文中,「橫軸」(transverse)一詞係指交叉於參考軸之一定位方向。在一態樣中,「橫軸」可包括至少一與參考軸形成實質上直角之一定位方向。
在本文中,「校準定位方向」(alignment orientation direction)一詞係指該複數個超研磨顆粒之校準軸的方向。舉例來說,於一網格結構中校準的複數個超研
磨顆粒會具有至少二個校準軸;於直行方向之校準軸及90度於直行方向之橫列方向之校準軸。
在本文中,「磨損」(ablate)或「削磨」(ablating)一詞係指從化學機械研磨墊修整器移除超研磨顆粒,或是減少超研磨顆粒之突出(projection),從而減少於超研磨顆粒及指示基材之間的接觸角度。
在本文中,「超研磨片段」(superabrasive segment)一詞係指具有複數個超研磨顆粒與其相關之一工件主體。
在一些態樣中,一超研磨片段可包括超研磨多晶材料以作為切割元件。
在本文中,「工件基材」一詞係指支撐研磨材料之研磨墊修整器的一部分,並使研磨材料且/或帶有研磨材料之超研磨片段固定於此。有益於本發明中之基材可具有各種形狀、厚度,或能夠支撐研磨材料之材料以充分提供研磨墊修整器有利於其目的之方式。基材可為一固體材料、在處理後成為固體之一粉末材料、或是一可撓性材料。
代表性的基材材料之例子包括金屬、金屬合金、陶瓷、相對剛性之聚合物或其它有機材料、玻璃、及其混成物,但不限於此。進一步,該基材可包括一有助於附著研磨材料至該基材之材料,包括有硬焊合金材料、燒結助劑及其類似物,但不限於此。
在本文中,「工作端」一詞係指顆粒之朝向該化學機械研磨墊之一端,並於修整作用時接觸該研磨墊。大多數顆粒之工作端將遠離該顆粒附著之基材。
在本文中,「方位(attitude)」一詞係指關於一定義表面上之超研磨顆粒之位置或排列,其中,該表面可為,例如:所附著之基材或於工作過程中應用之化學機械研磨墊。例如,一超研磨顆粒可具有一方位,係提供一特定部位之顆粒朝向一化學機械研磨墊。
在本文中,「燒結」一詞係指結合兩個或多個各自獨立之顆粒形成一連續之固體物質。燒結的過程涉及顆粒之固化以消除部分顆粒間之空隙。
「金屬的(metallic)」一詞意指金屬及類金屬(metalloid)。金屬係包括一般認知為金屬(發現自過度金屬、鹼金屬、及鹼土金屬在內)的化合物。舉例而言,金屬可為銀(Ag)、金(Au)、銅(Cu)、鋁(Al)及鐵(Fe)。類金屬具體包括矽(Si)、硼(B)、鍺Ge、銻(Sb)、砷(As)及碲(Te)。金屬材料亦包括合金或混合物,其混合物包括金屬材料。此合金或混合物可更包括額外的添加物。在本發明中,可包括以碳化物形成物(carbide former)及碳濕潤劑(carbon wetting agent)作為合金或混合物,但預期不會是唯一的金屬組成。碳化物形成元素可為如鈧(Sc)、釔(Y)、鈦(Ti)、鋯(Zr)、鉿(Hf)、釩(V)、鈮(Nb)、鉻(Cr)、鉬(Mo)、錳(Mn)、鉭(Ta)、鎢(W)及鎝(Tc)。碳濕潤劑可為如鈷(Co)、鎳(Ni)、錳(Mn)及鉻(Cr)。
在本文中,「熔滲(infiltrating)」意指當一材料加熱至其熔點,接著其液態流動經過顆粒間的間隙空洞。
在本文中,「實質上(substantially)」一詞意指一動作、特徵、特性、狀態、結構、項目、或結果具有完全的或接近完全的範圍或程度。舉例而言,一「實質上」封閉的物體意指該物體不是完全地封閉就是接近完全地封閉。相較於絕對的完整,其確切可接受之誤差程度可視文中具體情況而定。然而,一般談到接近完成可視為如同絕對及完全得到具有相同的整體結果。
「實質上(substantially)」一詞可同樣地應用於一負面含意,其意指一動作、特徵、特性、狀態、結構、項目、或結果為完全的或接近完全的缺乏。舉例而言,一組成物「實質上沒有」顆粒意指該組成物不是完全地缺乏顆粒,就是接近完全地缺乏顆粒,其影響如同完全地缺乏顆粒一樣。換句話說,一「實質上沒有」一成分或元素之組成物,只要不具有重要的影響,實際上可仍包含此項目(指該成分或元素)。
在本文中,「約(about)」一詞意指提供一數值範圍端點的彈性空間,即一給定值可以「稍微高於」或「稍微低於」此數值端點。
在本文中,複數個項目、結構元件、組成元件及/或材料可為了方便以一般的列舉呈現。然而,這些清單應被解釋為所述清單的每一列舉元件可為單獨且獨特的元件。因此,基於一般呈現而未有相對之其他描述的群組內,此列舉的單獨元件不需要單獨地被解釋為事實上相等於其他相同列舉出的元件。
在本文中,濃度、總量及其他數值資料可以一範圍形式表達或呈現。應瞭解的是此範圍形式僅為方便及簡化描述,因此應更具彈性的解釋此範圍,其不僅包含明確列舉為範圍界限的數值,且包括所述範圍內包含的所有單獨數值或子範圍,如同各數值和子範圍被明確列舉一樣。舉例而言,一數值範圍為「約1至約5」應解釋為不僅包括大約1至約5的明確列舉的值,更包括在指出的範圍內的單獨值及子範圍。因此,其在該數值範圍內包括如2、3、及4的單獨值及如自1至3、自2至4、及自3至5等的子範圍,以及分別為1、2、3、4及5。此相同的原則適用於一範圍,其僅指出一數值為一最小值或一最大值。此外,不論是範圍之幅度或特性,此解釋應被適用。
本發明
本發明通常提供一化學機械研磨墊修整器以及可利用於修整(例如:平坦化、拋光及修整)化學機械研磨墊之相關方法。本發明之研磨墊修整器可被有效地利用於,例如,修整一化學機械研磨墊,係用於拋光、加工或以其他方式修整半導體材料。具體來說,本發明之重點在於化學機械研磨墊修整器具有實質上平坦化尖端之超研磨顆粒。習知化學機械研磨墊製造方法,即便有許多描述於固定前使超研磨顆粒平坦化之技術,一般而言,整個修整器表面之尖端高度仍具有顯著變化。往往,將超研磨顆粒貼附到該化學機械研磨墊之修整器支撐體的方法即破壞了已產生
的平坦化。例如,利用高溫及/或高壓之固定技術,於該修整器冷卻時,將導致該修整器支撐體引起翹曲。因此,除非避免此翹曲,否則超研磨顆粒在修整器冷卻後將無法保持其平坦化狀態。這特別是使用硬焊技術的問題。
化學機械研磨墊修整器可藉由移除汙物或碎片(即,去釉化該研磨墊)而修整(dress)或修整(condition)一化學機械研磨墊,同樣地開啟化學機械研磨墊表面的粗糙度,以於一拋光過程中獲得及保留化學研磨液。如本文所述,由於在許多傳統製程中結合超研磨顆粒之平坦化是困難,在典型化學機械研磨墊修整器中僅有少數百分比例的超研磨顆粒被定位,使得穿透或切入該化學機械研磨墊。當少數百分比例的超研磨顆粒成為磨損時,該化學機械研磨墊之塑性變形相對於切割的化學機械研磨墊總量為變大的。
因此,該研磨墊成為高度地變形並且累積污物。因此,該化學機械研磨墊之拋光率下降,並且該晶圓或該工件之刮傷率提升。
化學機械研磨墊一般來說由一相對軟的聚合物製成,像是聚氨基甲酸酯。當藉由該化學機械研磨墊修整器作用該化學機械研磨墊時,先經由彈性應變及隨後的塑性應變而變形該聚合物材料。最後,在該變形材料中之應變能量超過鍵能密度(即該研磨墊之硬度)並且該聚合物材料斷裂。因此,在該化學機械研磨墊修整器中超研磨顆粒之功能係以藉由經過這樣變形過程中破壞聚合物之鍵而修整該化學機械研磨墊材料。要注意的是,尖銳的超研磨顆
粒尖點可穿透該化學機械研磨墊材料而不導致過度變形。
就此而言,可定義一超研磨顆粒之尖銳度可定義為於斷裂前的逆變形量。換句話說,於切割前較小的變形量,該切割尖點更尖銳。該變形的資訊可用於以決定在該化學機械研磨墊修整器中超研磨顆粒之尖銳度。
此外,一超研磨顆粒具有一較小尖端半徑之尖端,像是具有一破裂稜角之情況下,相較於具有一較大尖端半徑之超研磨顆粒,可俐落地切割該化學機械研磨墊具有較少的變形。因此,不規則形狀的超研磨顆粒尖端具有鈍角之全形超研磨稜角可更銳利相對於化學機械研磨墊。
相較於超研磨顆粒表面,這也可使用於在不同的超研磨顆粒稜角間。
因此要注意,尖銳的超研磨顆粒尖端可切割該化學機械研磨墊具有較少變形及材料應變。相反地,鈍的超研磨顆粒可使該化學機械研磨墊變形但無法切割該化學機械研磨墊,因為該應變能量沒有超過該聚合物材料之鍵能密度。當此顆粒尖端損壞時,於該聚合物材料及該顆粒之間的接觸面積增加。接觸面積的增加會導致該研磨墊之變形量增加。由於對於該聚合物材料破裂所需增加的應變能量隨著變形體積而增加,切割該聚合物材料之超研磨顆粒數目將與於化學機械拋光過程中鈍化程度有關而減少。
該化學機械研磨墊修整器也可以藉由在化學機械研磨墊中工作的超研磨顆粒的比例及過度侵略性切割的比例而影響。在一實例中,一典型化學機械研磨墊修整
器可具有超過10,000個超研磨顆粒。在這10,000個超研磨顆粒中,於一些情況下僅有少許工作超研磨顆粒確實能夠切割該化學機械研磨墊。此外,出於少數工作超研磨顆粒,有少數比例的過度侵略性超研磨顆粒切割超過整體研磨墊的50%在修整期間被消耗,並且在一些情況下可移除超過該全部研磨墊材料的25%。不平均的工作負載分佈可能導致不穩定的化學機械研磨墊性能,並且可導致化學機械研磨墊的過度消耗,過度侵略性超研磨顆粒之切削會刮傷晶圓,晶圓移除率無法預期,不平均的表面平坦化,短暫的化學機械研磨墊使用壽命,化學機械研磨墊伴隨著碎片之壓縮,以及諸如此類之情況。這樣的影響會大幅地降低晶圓或被加工工件在修整狀態下之產率。
本發明揭示試圖更有效地將橫跨於該化學機械研磨墊修整器之表面的工作負載分佈標準化,使得更均勻地去釉化該研磨墊並且產生更均勻的研磨墊粗糙化。本發明之化學機械研磨墊修整包括單層超研磨顆粒,在橫跨於該完成的化學機械研磨墊修整器工作表面上具有實質上的平坦化尖端。可使用各種技術來維持尖端平坦化,並且任何這樣的技術皆可被認定於本發明之範疇中。一些非限制性的實施例將於以下描述。
在一態樣中,如圖1所示,化學機械研磨墊修整器100包括嵌入基質層104之單層複數個超研磨顆粒102,從而使得每個單層超研磨顆粒係突出於該基質層104。單層超研磨顆粒之最高突出尖端108與次高突出尖端110間的突
出距離差異106係描述為突出差異。在一態樣中,突出差異可小於或等於約50微米。在另一態樣中,突出差異可小於或等於約20微米。在更一態樣中,突出差異可小於或等於約10微米。要注意的是,也可使用「突出差異」一詞以描述於兩個或以上的超研磨顆粒之間延伸(protraction)距離差異。
在另一態樣中,並且除了兩個最高突出尖端間的突出差異以外,單層超研磨顆粒之最高10個突出尖端間的的突出距離差異可於約30微米或以下。在又另一態樣中,單層超研磨顆粒之最高10個突出尖端間的的突出距離差異可於約20微米或以下。
此外,在一些態樣中第一單層超研磨顆粒之最高1%突出尖端之突出距離差異可於約80微米或以下。換句話說,對於具有最高突出尖端之1%的複數個研磨顆粒,此1%之突出距離變化為小於或等於約80微米。舉例來說,兩個最高突出的超研磨顆粒尖端彼此突出於約10微米或以下,此外,超研磨顆粒尖端之最高突出1%彼此突出於約80微米或以下。在又另一態樣中,單層超研磨顆粒之最高1%突出尖端之突出距離差異可於約60微米或以下。在又另一態樣中,單層超研磨顆粒之最高1%突出尖端之突出距離差異可於約40微米或以下。
要注意的是,所描述的突出距離可包括一橫跨於該整體層表面或是該單層之分離區域或片段的分佈。舉例來說,突出尖端的最高1%位於圍繞該單層之周圍。在一態樣中,舉例來說,實質上藉由設置於該修整器周圍區域
的超研磨顆粒而切割出在該化學機械研磨墊的全部粗糙度。
在另一態樣中,該周圍區域從該修整器之外邊緣往內朝向該修整器之中心點延伸直至該修整器半徑之約90%。在又另一態樣中,該周圍區域從該修整器之外邊緣往內朝向該修整器之中心點延伸直至該修整器半徑之約50%。在更一態樣中,該周圍區域從該修整器之外邊緣往內朝向該修整器之中心點延伸直至該修整器半徑之約33%。此外,在一些態樣中,實質上全部的超研磨顆粒位於該修整器之周圍區域上。在其他態樣中,實質上全部超研磨顆粒以預定圖案均勻排列在該修整器之周圍區域上。
在另一例子中,平坦化超研磨顆粒尖端之分離區域可位於具有比平坦化部分更低突出距離的超研磨顆粒之大範圍區域。也可以想到,該單層可包括所描述平坦化超研磨顆粒之多重區域或片段,其具有較低突出距離的超研磨顆粒之大範圍區域。
因此,單層超研磨顆粒之相對平坦化可藉由修整器而大幅地影響切入該化學機械拋光墊的粗糙化型態及分佈。舉例來說,在一態樣中,平坦化該單層,使得旋轉對著該化學機械研磨墊之該修整器切割出該具有一最大切割深度約80微米之化學機械研磨墊之粗糙度。在另一態樣中,平坦化該單層,使得旋轉對著該化學機械研磨墊之該修整器切割出該具有一最大切割深度約60微米之化學機械研磨墊之粗糙度。在又另一態樣中,平坦化該單層,使得旋轉對著該化學機械研磨墊之該修整器切割出該具有一最大切割深度約40微
米之化學機械研磨墊之粗糙度。藉由形成尖銳的粗糙度,增加於該工件及該化學機械拋光墊之間的接觸壓力,從而改善該研磨墊之拋光性能。當這些尖銳的區域開始變平滑時,接觸壓力開始下降,且位在其間的研磨液為較少有效地下壓朝向工件。在一些態樣中,有益於在該研磨墊及該晶圓間的接觸面積為整體晶圓表面區域小於或等於約1%面對該研磨墊。
在其它態樣中,有益於對於在該研磨墊及該晶圓間的接觸面積為整體晶圓表面區域小於或等於約0.1%面對該研磨墊。少數接觸面積為由於晶圓處於粗糙的接觸點上。在拋光過程中,粗糙化之尖銳尖端變得磨損,從而增加接觸面積並且降低接觸壓力於一點由此研磨液磨粒無法有效地研磨晶圓。在該點上,由晶圓之材料移除率下降,並且該研磨墊需要被再修整以再塑形該粗糙化。
此外,藉由修整器而放置於該化學機械拋光墊之負荷可影響間隙之形貌,例如,在一些情況下,該粗糙化深度。調整一給定之修整器負荷,用以調整穿透深度。在一態樣中,舉例來說,該負荷可為從約0.1公斤至約60公斤。在其他態樣中,該負荷可為從約2公斤至約20公斤。在更一態樣中,該負荷可為從約6公斤至約12公斤。在一些態樣中,該負荷可為公斤/平方公尺。舉例來說,在一態樣中,11.5公斤的負荷可允許對於來自晶圓的材料移除率為每小時約200微米之銅層。在一相關例子中,11.5公斤的負荷可允許對於來自晶圓的材料移除率為每小時約100微米之氧化物。在許多情況
下,可使用較低負荷使該超研磨顆粒的損害最小化(例如,小於或等於約2公斤)。
此外,於單層超研磨顆粒中之平坦化尖端允許不同的超研磨顆粒數量以確實的切割粗糙化在研磨墊上。
在另一態樣中,例如,當旋轉該修整器時,該複數個超研磨顆粒之至少100個尖端切入粗糙化該化學機械研磨墊。在另一態樣中,當旋轉該修整器時,該複數個超研磨顆粒之至少50個尖端切入粗糙化該化學機械研磨墊。在又一態樣中,當旋轉該修整器時,該複數個超研磨顆粒之至少25個尖端切入粗糙化該化學機械研磨墊。
可利用各種方法測量超研磨顆粒之高度已決定尖端間之突出距離差異。因此任何可用以決定之方法係被考量於本發明之範疇中。需注意的是,為本發明之目的,名詞「突出」意指為一顆粒相對於參考點之高度。此等測量之技術可包括直接測量該尖端相對於一參考點之高度,該參考點例如可為:最高顆粒尖端、一剛性支撐層、該基質層之底面等。因基質材料可能會因毛細現象吸附在該超研磨顆粒周邊而呈現不規則狀態,由基質材料表面測量顆粒高度是有問題的。在基質層是均勻的例子中,此表面是可由顆粒高度而決定。此外,兩顆粒間之相對突出或高度距離差異會是在這些由通常的參考點測量之顆粒之高度差異。此外,在部分例子中,該超研磨顆粒可能沿著一斜面、曲面或其他不平行於該金屬支撐層之排列而設置。在這些例子中,該突出高度會對該斜面、曲面或其他不平行於該金屬支撐層之排列校準,從
而可忽略該斜面、曲面等以測量顆粒間之相對突出高度差異。
應注意的是,在某些例子中,該超研磨顆粒尖端高度之平坦度可獨立於於整個修整器表面之該超研磨顆粒之設置或圖案化。
一直接測量技術之例子可包括一判斷超研磨顆粒尖端位置之光學掃描方法。在此方法中,一光學掃描儀可掃描該粗糙成形修整器之表面以決定該相對於固定點之超研磨顆粒尖端之高度。例如,該掃描儀可向下掃描朝向該修整器的空間直到定位出最高尖端。該最高尖端可設為該參考點,且該掃描儀於一朝向高修整器的方向上持續掃描以測量從該參考點到整個修整器表面之每個超研磨顆粒尖端之距離。據此,可直接測量整個修整器上所有的超研磨顆粒間之突出距離差異。
再者,測量的技術也可包括間接式測量,例如,將該單層超研磨顆粒設置到一可變形之基材而使基材相對於該顆粒尖端之突出距離而變形。該單層可嵌入該可變形基材及/或移動整個可變形基材以於其上形成一刮痕圖案。尖端高度可從此間接測量推斷而得。
一量測具體例子可為FRT掃瞄以量測於基板或基材上所有尖端的高度,並且然後基於最小平方法以數學定義適合所有尖端高度之一平面。於該定義平面上之最高尖端可被定義,且然後可基於最高尖端、或相對於該定義平面、或兩者之定義而決定其它鑽石尖端高度。
在另一具體例子,可直接也可間接使用該最高的1,000個至1,200個顆粒之尖端以建構一定義平面,並進一步用於平坦化效果之定義,像是如上所揭示。在另一態樣中,可使用於該修整器中該複數個顆粒之最高33%的尖端。
在另一態樣中,最高100個顆粒尖端可被用於作為顆粒總體以建立一定義平面。
各種材料皆可考慮使用作為超研磨顆粒。任何可利用於化學機械研磨墊修整器之習知超研磨料應被認為包含於本發明之範疇中。在不受限制本發明之例子中,此材料可包括鑽石材料、氮化物材料、陶瓷及其類似物。在一態樣中,超研磨顆粒包括鑽石材料。此鑽石材料可包括天然或合成鑽石、單晶、多晶及其類似物。在另一態樣中,超研磨顆粒包括立方氮化硼材料。此外,各種鑽石顆粒大小皆可使用,包括網目大小如10/20、30/40、80/90、90/100、100/120、120/140、140/170、170/200、200/230、230/270、270/325及325/400。
此外,該複數個超研磨顆粒具有方向性以影響化學機械研磨墊之修整效能。具有方向性之超研磨顆粒以特定方位朝向被修整之化學機械研磨墊,於研磨墊表面上形成不同的粗糙度,從而提升該化學機械研磨墊之效能。不同的粗糙度可以不同的形式保留研磨液,並能根據粗糙深度、寬度、密度等拋光不同的工件。化學機械研磨墊修整器之超研磨顆粒可根據被化學機械研磨墊之拋光特性而具有方向性。
例如,若預期超研磨顆粒具有方向性朝向該化學機械研磨墊之頂點(apex),研磨墊之粗糙度將顯得窄且深。窄且深的粗糙
度的優點為使該研磨墊能較佳的保留拋光研磨液,從而提高晶圓拋光率。然而,提高拋光率可能也增加了超研磨顆粒的磨耗率。因此,磨耗率可能與超研磨顆粒之方向性非常相關,因此,當設計一具有所需的效能特性之裝置時,需考慮每一超研磨顆粒之方向性。一般而言,具方向性之超研磨顆粒提供較高的修整速率(即較深的穿入研磨墊中)也以較高的速率磨耗顆粒。
反之,若超研磨顆粒為一平面朝向研磨墊之方向性,其可能以較低之速率拋光形成之粗糙度。一般認為,顆粒的平面是較為耐用,但通常無法在研磨墊上切割出深且窄的粗糙度,反而是淺且寬的粗糙度。因此相較於顆粒的頂點部位,顆粒的平面部位會減緩修整化學機械研磨墊之速率,且超研磨顆粒之磨耗率將會低得多。
超研磨顆粒之邊緣部位具有介於其平面部位及頂點部位之修整及磨耗特性。可以預期若利用邊緣部位修整化學機械研磨墊,其粗糙度將不會如以頂點部位修整來得深或窄,但卻可提供具有理想的中間特性之粗糙度。再者,顆粒的邊緣部位並不會以如頂點部位般之高速率磨耗。
在一態樣中,該複數個超研磨顆粒實質上全部設置為具有一頂點部位朝向欲修整之研磨墊之型態。在另一態樣中,該複數個超研磨顆粒實質上全部設置為具有一邊緣部位朝向欲修整之研磨墊之型態。在又一態樣中,該複數個超研磨顆粒實質上全部設置為具有一尖銳部位朝向欲修整之研磨墊之型態。
具有實質上平坦化尖端配置之化學機械研磨墊修整器,其相較於傳統的修整器具有較均勻的突出分佈,故超研磨顆粒較不易被從基質從中拉出,其刮痕率也較低。此外,修整器之較均勻的突出分佈以提供在此方式對化學機械研磨墊修整以促進良好的拋光速率,並同時延長修整器之工作壽命。例如,於化學機械研磨墊上的均勻粗糙之間距及大小分佈將會影響這些優異性。
在一態樣中,如圖2所示,修整化學機械研磨墊之方法可包括:202下壓一化學機械研磨墊修整器對著一化學機械研磨墊;204該修整器包括一單層超研磨顆粒,係為複數個超研磨顆粒突出於一基質層,其中,該單層超研磨顆粒之最高突出尖端與第2個最高突出尖端之突出距離差異為小於或等於約10微米,以及且該單層超研磨顆粒之最高10個突出尖端之突出距離差異為約20微米或更小。該方法可更包括206旋轉對著該化學機械研磨墊之該修整器,使得切割出該具有一最大切割深度約60微米之化學機械研磨墊的粗糙度。在另一態樣中,如圖3所示,本方法更包括:302旋轉該化學機械研磨墊;304施加一研磨液體於該旋轉中化學機械研磨墊之該拋光表面上;以及306施加一工件於該拋光表面,使得藉由與該研磨液結合之粗糙化而拋光該工件。
在本發明之另一態樣中,可藉由有效使翹曲最小化之方式,在製造化學機械研磨墊修整器中,達成超研磨顆粒之平坦化。例如,在一態樣中,化學機械研磨墊修整器可至少以一兩階段處理製造,其中第一階段為盡可能於通常
會顯著移動超研磨尖端超出其平坦化的排列之處理中(如:硬焊)減少對平坦化之尖端的干擾。製程之第二階段更包括提高在整個化學機械研磨墊上之超研磨顆粒尖端之平坦化。
具有實質上平坦化尖端之化學機械研磨墊修整器之各種實施結構都可作為考慮。在一態樣中,例如,化學機械研磨墊修整器可包括一第一單層超研磨顆粒,係設置於一金屬支撐層之一側,以及一第二單層超研磨顆粒,係設置於該金屬支撐層之另一側並相對於該第一單層超研磨顆粒。
該第二單層超研磨顆粒之位置與第一單層超研磨顆粒具有實質上相同之分佈。一剛性支撐層係耦合至第二單層超研磨顆粒,其係相對於第一單層超研磨顆粒,提供以支撐該修整器。
如圖4所示,第一單層超研磨顆粒402排列於金屬支撐層404之一表面。第二單層超研磨顆粒406排列於該金屬支撐層404之另一側,係相對於該第一單層超研磨顆粒。接著更進一步討論,如圖4所示,在某些態樣中,於整個金屬支撐層上,該第一與第二單層超研磨顆粒可實質上排列對齊相對應的超研磨顆粒。在其他態樣中,第一與第二單層超研磨顆粒可大致以相似的分佈排列,但可能會或可能不會實質上在整個金屬支撐層上都對齊。
金屬支撐層可為任何能夠於工件形成的時支撐單層鑽石之材料。此材料可包括金屬材料、金屬合金材料、硬焊合金材料、陶瓷材料、複合物及其類似物,但不侷限於此。
在一態樣中,超研磨顆粒可排列成一預定之圖案。此圖案可以是均勻分佈的圖案或非均勻分佈的圖案。此外,促進超研磨顆粒排列於預定圖案之各種技術均可作為考慮。應了解的是,預定意指於排列超研磨顆粒之前已決定之非隨機圖案。在一態樣中,預定的圖案也可應用於預先決定顆粒之間距。在非限制本發明之實施例中,此技術包括:藉由模板排列、使用點膠排列、排列於第一基材上隨後接著將特定圖案從該第一基材移轉至金屬支撐層上,類似的方式及其組合。可使用各種技術將任一單層的超研磨顆粒暫時地固定於一預定的圖案中,包括:黏著、於金屬支撐基質上凹陷的位置、支撐之化合物(例如:蠟及其類似物,包括及其組合),並未限制於此。在一特定的態樣中,超研磨顆粒可使用黏著劑暫時地耦合至金屬支撐層,其中該黏著劑可於製造修整器的過程中揮發並消除。
於一態樣中,該預定之圖案可為一均勻分佈的格子(grid)。於另一態樣中,該預定之圖案可為一中央區域不具超研磨顆粒之環形設置。於一具體態樣中,該環形設置可包括一圓形環。於另一具體態樣中,該環形設置可包括一圓形環的一部分。於又一態樣中,一環形設置可包括一個或多個相互套疊之同心圓形環。於另一態樣中,該單層分佈可為不連續之徑向區域、螺旋區域及其類似區域。
於該金屬層之每一側上設置單層超研磨顆粒從而調節由硬焊溫度形成之熱收縮,反之只於單一側排列超研磨顆粒則會形成變形。藉由設置單層超研磨顆粒於該金屬支
撐層之每一側,如熱量移動或壓力等的翹曲作用力可於兩側相等或實質上相等。據此,可使金屬支撐層之翹曲最小化。
換言之,於該金屬支撐層每一側上造成翹曲作用力實質上是相同的並且至少部分可相互抵消,因此可減少翹曲的發生。
於某些態樣中,在該金屬支撐層之每一側上製造之單層超研磨顆粒可具有相互對稱之排列、圖案或方向。此方法可以在該金屬支撐層之每一側上有實質上對稱之超研磨顆粒之空間排列。於另一態樣中,該配置、圖案或方向可不同或變化,或可以是部分相互對稱。於又一態樣,於該金屬支撐層之一側上,該超研磨顆粒之圖案設置實質上可依照金屬支撐層上另一側之超研磨顆粒之圖案排列,使得超研磨顆粒之位置相互對稱。於某些態樣中,於該金屬支撐層一側之超研磨顆粒之空間位置及金屬支撐層另一側之超研磨顆粒之空間位置間可直接相對應一致。於另一態樣中,超研磨顆粒的圖案可相互對稱或實質上相互對稱,但可於金屬支撐層之相對一側上錯開,使得顆粒位置未互相對稱。
據此,金屬支撐層之翹曲最小化可於完成工件中得到較大平坦化程度之超研磨顆粒尖端。在使用加熱及/或加壓以製作一超研磨工件時,金屬支撐層之翹曲可使尖端高度平坦化中產生較大變化,甚至於在加熱及/或加壓前的顆粒平坦化。在一態樣中,透過研磨顆粒之排列在金屬支撐層兩側上分布相等或實質上相等之翹曲作用力可有效地消除於相對側上之作用力,且從而大幅減輕於金屬支持層中產生的翹曲程度,也從而使相對於另一個之超研磨顆粒相對高度位
移最小化。在另一態樣中,使用沒有利用高壓及/或高溫之製程可製造化學機械拋光墊修整器。
於另一態樣中,如圖5所示,第一單層超研磨顆粒502係排列於一金屬支撐層504之一表面上。第二單層超研磨顆粒506係排列於該金屬支撐層504之一側,而相對於該第一單層。利用一結合材料508將第一單層及第二單層固定至該金屬支撐層504。該結合材料可以是任何能夠將第一單層及第二單層固定至該金屬支撐層504之材料。於某些態樣中,可使用相同之結合材料固定第一單層及第二單層。於另一態樣中,則可使用不同的結合材料固定第一單層及第二單層。
結合材料可為任何可固化超研磨顆粒之材料,在非限定本發明之實施例中,結合材料包括金屬焊料、金屬焊料合金、有機基質材料、燒結材料、電鍍材料、及其類似物、包括及其組合。
於一態樣中,例如,該超研磨顆粒可硬焊至一金屬支撐層,其中該結合材料可為一金屬焊料或一金屬焊料合金。金屬硬焊技術係為所屬技術領域習知技術。一青銅焊料(green braze materials)可用於該金屬支撐層上或該超研磨顆粒周圍。該金屬焊料可為任何習知結構,包括焊接片、粉、膏、噴霧及其類似,包括及其組合。當作用於該金屬支撐層,該焊料可加熱並熔融以塗佈於該金屬支撐層之至少一部份以結合該超研磨顆粒。該加熱溫度可根據所使用之硬焊材料而變化,於一態樣中約為700℃至1200℃。於加熱及冷卻過程中,於第一及第二單層之超研磨顆粒具有規則排列,從而使得施
加於該金屬支撐層上之熱作用力大致相等,並使翹曲最小化。
於一非限定本發明之例子中,該超研磨顆粒可藉由硬焊結合至該金屬支撐層,該焊料係為含氯之鎳基合金。
在其他例子中,硬焊可包括以一非結合至該焊料之平面陶瓷材料抵壓該超研磨顆粒,使該超研磨顆粒尖端平坦化。各種硬焊合金皆可考慮,包括非限定本發明之例子,如BNi2、BNi7及其類似物。
此外,於一態樣中,該第一及第二單層超研磨顆粒可藉由一電沉積方式(electrodeposition process)結合至一金屬支撐層,該結合材料可為一電沉積金屬材料。在適當方法之例子中,於電沉積處理之前及期間,設置並保留研磨材料,並使用一包括絕緣材料之模具,其中該絕緣材料可有效地防止電沉積材料累積於模具表面。於電沉積過程中,超研磨顆粒可埋設在該模具之模具表面上。據此,可防止於顆粒尖點上及該研磨墊修整器基材之工作表面上發生電沉積材料之累積。相關技術已描述於2005年12月2日所提出之美國專利申請案號第11/292,938號中,一併於此作為參考。
於另一態樣中,該超研磨顆粒可藉由燒結方式以結合至該金屬支撐層,因此該結合材料可為一燒結材料。
例如,將該超研磨顆粒結合至該金屬支撐層可包括設置一燒結化合物於該金屬支撐層上並接觸第一單層及第二單層之至少一者,並燒結該燒結化合物以將第一單層及第二單層之至少一者結合至該金屬支撐層。藉由在此揭露之本技術領域中
具有本發明製程之一習知技術,將容易選擇合適的燒結材料。基本上,一燒結化合物係設置於該超研磨顆粒周邊並與該金屬支撐層接觸。該燒結化合物可為任何習知可用於將超研磨顆粒固定在一基材之燒結材料。在非限制本發明之例子中,此材料可包括金屬或金屬合金粉末、陶瓷粉末,及其類似物。在非限制本發明之具體實例中,燒結化合物係為鈷粉末。
當燒結化合物設置於該超研磨顆粒周邊及金屬支撐層時,可利用加熱及加壓(在部分實施例中)而引起燒結。在部分態樣中,一硬焊或硬焊合金可在鍵結過程中熔滲進入至燒結化合物中,以更進一步強化鍵結後之材料基質。
於另一態樣中,如圖6所示,係利用加熱及加壓將第一單層超研磨顆粒602及/或第二單層超研磨顆粒606直接結合至該金屬支撐層604。因此,利用加熱或加壓的方式,使金屬支撐層604軟化或部分熔融。接著將該單一或多個單層中的超研磨顆粒壓入該金屬支撐層中。一表面平坦化之平面可用於加壓該單層超研磨顆粒,使得該超研磨顆粒被壓入該金屬支撐層時,可保持該超研磨顆粒尖端之平坦化性質。於冷卻之後,於該金屬支撐層兩側之超研磨顆粒之分佈至少部分相等施加熱作用力於該金屬支撐層,以使其翹曲最小化。
於又一態樣中,如圖7所示,一化學機械研磨墊修整器可包括第一單層超研磨顆粒702及第二單層超研磨顆粒706,係耦合至一金屬支撐層704。該超研磨顆粒可直接或使用一結合材料耦合至該金屬支撐層。該第二單層超研磨顆粒706係耦合至一剛性支撐層708。於圖7中,該剛性支撐層之
部分係被移除以顯示該第二單層。該剛性支撐層708可有助於該化學機械研磨墊修整器之操作及使用。藉由將該第二單層超研磨顆粒結合至該剛性支撐層上,該第一單層超研磨顆粒仍然露出作為化學機械研磨墊之修整運作。
該剛性支撐層可由適用於研磨或修整加工之任何材料以製成。此材料可包括高分子材料、金屬材料、陶瓷材料、玻璃、複合材料及其類似物。於一態樣中,該剛性支撐層可為一高分子材料,且可使用加熱、加壓、黏著劑等方式將第二單層超研磨顆粒嵌入其中。於某些態樣中,該剛性支撐層可為一非高分子材料(如:金屬層)。在此情況中,可藉由黏著劑附著、燒結、硬焊、電鍍及其類似方式將超研磨顆粒結合至該剛性支撐層。對硬焊技術而言,於加熱及冷卻處理時,需注意該金屬層之翹曲最小化或消除。於另一態樣中,一或多個磁性元件可設置於該剛性支撐層中以吸附並固定該化學機械研磨墊修整器之位置,形成一暫時的附著。在使用過程中,可利用一鎖定機制更進一步將該化學機械研磨墊修整器固定於該剛性支撐層。於某些態樣中,該剛性支撐層可包括一表面特徵,其可於相對一化學機械研磨墊旋轉移動的過程中以固定該修整器。該剛性支撐層可與該金屬支撐層可具有相同之直徑,或剛性支撐層之直徑可大於金屬支撐層之直徑,抑或,於某些態樣中,剛性支撐層之直徑可小於金屬支撐層之直徑。
於另一態樣中,一化學機械研磨墊修整器可包括複數個具有平坦化超研磨顆粒尖點之修整片段,其中該複
數個修整片段藉由一剛性支撐層而埋設固定。此設計可提供製備複數個具有精確平坦化尖點之較小型修整片段。在這些修整片段中,較小直徑之金屬支撐層因其尺寸較小,可於製備過程中受到熱及/或壓力影響之翹曲也較少。例如,相較於一直徑0.5英寸的金屬碟盤(即修整片段),直徑4英吋的金屬碟盤將受焊料而造成之更多翹曲,因此,熱變形及顆粒浮動的問題將會減少。藉由不會引起顯著翹曲的製程(例如:以一有機材料結合),複數個修整片段隨後可結合在一較大直徑之剛性支撐層。此修整組件可具有一層或多層結合於一支撐層之超研磨顆粒。於一態樣中,該片段可具有一結合至金屬支撐層之單層超研磨顆粒,如本文所述。因此,此製程提供製造可具有精確尖點突出誤差的化學機械研磨墊修整器。此外,於一態樣中,每個修整片段可具有至少三個超研磨顆粒突出於最大延伸方向。若位於每個修整片段上之三個最高突出超研磨顆粒已平坦化在整個剛性支撐層上,可製備出一於整個表面具有非常精確平坦化尖點之化學機械研磨墊修整器。
例如,若使用十個修整片段以製備該化學機械研磨墊修整器,於該工具中之前三十個最高突出之超研磨顆粒將有效地具有相同突出距離且實質上具有平坦化。有關修整片段之各種其它技術之已描述於2011年2月24日所提出之美國專利申請案號第13/034,213號中,一併在此作為參考,包括具有至少一切割刀片之修整片段也被考慮在內。
各種有機材料可考慮使用作為一剛性支撐層且/或用於固定該第二單層超研磨顆粒及/或該修整片段至該剛
性支撐層。有機基質材料之適合例子包括胺基系樹脂(amino resins)、丙烯酸酯系樹脂(acrylate resins)、醇酸樹脂(alkyd resins)、聚酯類樹脂(polyester resins)、聚醯胺類樹脂(polyamide resins)、聚亞醯胺類樹脂(polyimide resins)、聚氨基甲酸酯樹脂(polyurethane resins)、酚醛樹脂(phenolic resins)、酚醛/乳膠樹脂(phenolic/latex resins)、環氧樹脂(epoxy resins)、異氰酸酯類樹脂(isocyanate resins)、聚異氰酸樹脂(isocyanurate resins)、聚矽氧樹脂(polysiloxane resins)、反應性乙烯基樹脂(reactive vinyl resins)、聚乙烯樹脂(polyethylene resins)、聚丙烯樹脂(polypropylene resins)、聚苯乙烯樹脂(polystyrene resins)、苯氧基樹脂(phenoxy resins)、苝樹脂(perylene resins)、聚磺酸酯樹脂(polysulfone resins)、丙烯腈-丁二烯-苯乙烯樹脂(acrylonitrile-butadiene-styrene resins)、丙烯酸酯樹脂(acrylic resins)、聚碳酸酯類樹脂(polycarbonate resins)、聚亞醯胺類樹脂(polyimide resins),及其混合物,但不侷限於此。
於一特定態樣中,該有機材料可為一環氧樹脂。於另一態樣中,該有機材料可為一聚亞醯胺樹脂。於又一態樣中,該有機材料可為一聚氨基甲酸酯樹脂。
此外,在本文中所稱之「反轉鑄造(reverse casting)」法可為用以精確方向性及將該修整片段接合至該剛性支撐層上。此方法可包括於起始固化時,使用一「光罩」材料將複數個修整片段固定在一基材上。該修整片段部分係突出於該光罩材料,接著可使用在此所討論的方法將其接合
至該剛性支撐層,並於此之後(或在過程中)移除該光罩材料。
當利用一有機材料時,固化該有機材料的方法可為本技術領域中熟悉此等技術者習知之各種製程,從而導致該有機材料從至少一柔軟的狀態相變化成至少一剛硬狀態。
可由任何本技術領域熟悉該項技術者習知之方法達成固化,如:藉由以熱形式賦予能量以環氧化該有機材料;電磁輻射,例如,紫外光、紅外光及微波輻射;粒子衝擊,如電子束、有機催化劑、無機催化劑,或其他類似方法,並未侷限於此。
於本發明之一態樣中,該有機材料可為一熱塑型材料。熱塑型材料可藉由各自獨立冷卻及加熱而可逆地硬化及軟化。於另一態樣中,該有機材料可為一熱固型材料。
熱固型材料無法如熱塑型材料般,可逆地硬化及軟化。換言之,如有所需,一但發生固化,該過程基本上是不可逆的。
作為一個如前述之較詳細列舉,使用於本發明實施例中之有機材料包括:胺基系樹脂、丙烯酸酯系樹脂、醇酸樹脂(如:胺甲酸乙酯醇酸樹脂(urethane alkyd resins))、聚酯類樹脂、聚醯胺類樹脂、聚亞醯胺類樹脂、反應性胺甲酸乙酯樹脂(reactive urethane resins)、聚氨基甲酸酯樹脂(polyurethane resins)、酚醛樹脂(如:可溶酚醛樹脂及線形酚醛樹酯)、酚醛/乳膠樹脂、環氧樹脂(如:雙酚環氧樹脂)、異氰酸酯類樹脂、聚異氰酸樹脂、聚矽氧樹脂(如:烷基烷氧基化矽烷(alkylalkoxysilane resins))、反應性乙烯基樹脂、標示有BakeliteTM商標名之樹脂、丙烯酸酯樹脂、聚碳酸酯類樹脂,
及其混合物與組合,其中,該烷基系樹脂包括:烷基化尿素甲醛樹脂(alkylated urea-formaldehyde resins)、三聚氰胺甲醛塑脂(melamine-formaldehyde resins),及烷基化苯胍胺甲醛樹脂(alkylated benzoguanamine-formaldehyde resins);該丙烯酸酯系樹脂包括:乙烯基丙烯酸酯(vinyl acrylates),丙烯酸化環氧樹脂(acrylated epoxies),丙烯酸酯化胺甲酸乙酯(acrylated urethanes),丙烯酸酯化聚酯(acrylated polyesters),丙烯酸酯化丙烯酸樹脂(acrylated acrylics),丙烯酸酯化聚醚(acrylated polyethers),乙烯基醚(vinyl ethers),丙烯酸酯化油(acrylated oils),丙烯酸酯化矽膠(acrylated silicons),及相關的丙烯酸甲酯(associated methacrylates);標示有BakeliteTM商標之樹脂包括:聚乙烯樹脂、聚丙烯樹脂、環氧樹脂、酚醛樹脂、聚苯乙烯樹脂、苯氧基樹脂、苝樹脂、聚磺酸酯樹脂、乙烯共聚物樹脂(ethylene copolymer resins)、丙烯腈-丁二烯-苯乙烯(ABS)樹脂、丙烯酸酯樹脂及乙烯基樹脂。於本發明之一態樣中,該有機材料可為一環氧樹脂。於另一態樣中,該有機材料可為一聚亞醯胺類樹脂。於又一態樣中,該有機材料可為一聚氨基甲酸酯樹脂。
該有機材料可包括許多的添加物以方便其使用。
例如,額外的交聯劑及填充劑可用以提高該有機材料層之固化特性。此外,可利用溶劑改變於該有機材料於未固化狀態下的特性。也可於固化的有機材料層中之至少一部位設置一補強材料。此補強材料可作為增加該有機材料層強度之功能,更可提高該個別研磨片段之固著力。於一態樣中,該補強材
料可包括陶瓷、金屬或其組合。陶瓷的例子包括:鋁、碳化鋁(aluminum carbide)、二氧化矽、碳化矽(silicon carbide)、氧化鋯(zirconia)、碳化鋯(zirconium carbide)及其組合。
此外,於一態樣中,可塗佈一耦合劑或一有機金屬化合物於一超研磨材料之表面上以利於該超研磨顆粒藉由化學鍵結固著在有機材料中。於本技術領域中,為熟悉該項技術者習知之各種有機及有機金屬化合物皆可使用。有機金屬結合劑可於該超研磨材料及該有機材料間形成化學鍵結,從而提高位於其中之超研磨材料之固著力。如此,該有機金屬耦合劑可提供做為一架橋以於該有機材料及該超研磨材料表面間形成鍵結。於一本發明之態樣中,該有機金屬耦合劑可為鈦酸鹽(titanate)、鋯酸鹽(zirconate)及其混合物。所使用之有機金屬耦合劑之含量係取決於該結合劑及該超研磨材料之表面積,通常情況下,該耦合劑或有機金屬化合物佔有機材料層重量之0.05至10%即可足夠。
在非限制本發明之實例中,可適用於本發明之矽烷包括:道康寧公司(Dow Corning)型號Z-6040之3-縮水甘油醚丙基矽烷(3-glycidoxypropyltrimethoxy silane):聯合碳化物化學公司(Union Carbide Chemicals Company)型號A-174之γ-甲基丙烯氧基丙基三甲氧基矽烷(γ-methacryloxy propyltrimethoxy silane);聯合碳化物化學公司(Union Carbide)及Shin-etsu Kagaku Kogyo等公司之β-(3,4-環氧環己)乙基三甲氧基矽烷(β-(3,4-epoxycyclohexyl)ethyltrimethoxy silane
)、γ-氨丙基矽烷(γ-aminopropyltriethoxy silane)、N-(β-胺基乙基)-γ-胺基丙基甲基二甲氧基矽烷(N-(β-aminoethyl)-γ-aminopropyl-methyldimethoxy silane)。在非限定本發明之實例中,鈦酸鹽耦合劑包括:三異硬酯酸鈦酸異丙酯(isopropyltriisostearoyl titanate)、二(異丙苯基過氧化氫異丙苯)氧乙酸鈦酸(di(cumylphenylate)oxyacetate titanate)、4-胺基苯磺醯十二烷基苯磺醯鈦酸(4-aminobenzenesulfonyldodecyl-benzenesulfonyl titanate)、四辛基二(二三癸基磷酸)鈦酸(tetraoctylbis(ditridecylphosphite)titanate)、異丙基三(N-乙基胺基乙基胺基)鈦酸(isopropyltri(N-ethylamino-ethylamino)titanate)(Kenrich Petrochemicals公司銷售)、新烷氧基鈦酸鹽(neoalkyoxy titanates),及其類似物,其中該新烷氧基鈦酸鹽也可由Kenrich公司銷售之LICA-01、LICA-09、LICA-28、LICA-44及LICA-97。在非限定本發明之實例中,鋁耦合劑包括:Ajinomoto公司銷售之醋酸烷氧基鋁二異丙酯及其類似物。在非限定本發明之實例中,鋯耦合劑包括:Ajinomoto公司銷售之新烷氧基鋯酸鹽、LZ-09、LZ-12、LZ-38、LZ-44、LZ-97、及其類似物。其他習知之有機金屬耦合劑,如:硫醇基類化合物,也可用於本發明並被認為是在本發明之範疇中。
於本發明之其他態樣中,可藉由減少顆粒於所需之容許差異範圍外之突出以平坦化超研磨顆粒尖點。當此顆粒被辨識出來,可利用各種技術來減少這樣的突出。於一
態樣中,例如,該修整器之機械式磨耗可減少該突出顆粒。
於另一態樣中,可使用一振動工具來分別破壞此顆粒。於又一態樣中,可使用如Nd:YAG雷射之雷射來破裂這樣的顆粒。
於本發明之另一實施例中,一種製造化學機械研磨墊修整器之方法,包括:設置第一單層超研磨顆粒於一金屬支撐層上;以及設置第二單層超研磨顆粒於該金屬支撐層之相對於第一單層之另一側。該第二單層超研磨顆粒之位置與第一單層超研磨顆粒具有實質上相同之分佈。該方法更包括:結合該第一單層超研磨顆粒及該第二單層超研磨顆粒至該金屬支撐層,由於第一單層及該第二單層間具有實質上相似之分佈以造成對稱之作用力,並避免該金屬支撐層實質上翹曲。
於又一態樣中,設置該第一單層超研磨顆粒或該第二單層超研磨顆粒之至少一者,可包括:黏著複數個超研磨顆粒至一黏著轉移片,並藉由一模板之孔洞建立一預定圖案;以及將該模板從該黏著轉移片移除,使得該複數個超研磨顆粒依照預定圖案黏著於該黏著轉移片上。接著,可利用該黏著轉移片轉移該複數個超研磨顆粒至該金屬支撐層,並將該黏著轉移片從該複數個超研磨顆粒上移除以形成該第一單層超研磨顆粒或該第二單層超研磨顆粒之至少一者。
於本發明之另一態樣中,一種於製造過程中使化學機械研磨墊修整器之翹曲最小化之方法,可包括:於結合複數個超研磨顆粒至一金屬支撐層時,於該金屬支撐層相對兩側具有實質上相等之翹曲作用力,其中,由於相對兩側
之相等作用力,而使支撐層之翹曲最小化。於一態樣中,實質上相等之翹曲作用力包括:複數個超研磨顆粒排列於支撐層之相對兩側,使得支撐層兩側之複數個超研磨顆粒具有實質上相同之分佈,以在結合時具有實質上相等之翹曲作用力。
於本發明之又一態樣中,一種化學機械研磨墊修整器可包括複數個超研磨顆粒排列作為一工作表面,其中,該第一單層超研磨顆粒之最高突出尖端與第2個最高突出尖端之突出距離差異為小於或等於約20微米,且在第一單層超研磨顆粒之最高1%突出尖端間之突出距離差異係為約80微米之內。
於另一態樣中,一種化學機械研磨墊修整器可包括複數個超研磨顆粒排列作為一工作表面,其中該最高突出尖端與第2個最高突出尖端之突出距離差異為小於或等於約10微米;該最高突出尖端與第10個最高突出尖端之突出距離差異為小於或等於約20微米;該最高突出尖端與第100個最高突出尖端之突出距離差異小於或等於約40微米,以及該最高突出尖端之突出距離係大於或等於約50微米。
在本發明之另一態樣中,該化學機械研磨墊修整器可具有平坦化顆粒尖點,使得至少30%顆粒為承擔用以實質上修整作用該修整器於一化學機械研磨墊上的動作。在另一態樣中,至少50%顆粒可作承擔。在又另一實施例中,至少300個顆粒可作用於該研磨墊並為承擔於修整動作。在另一態樣中,至少1,000個顆粒可作承擔。在更一態樣中,至少
1,200個顆粒可作擔。可使用顆粒磨損辨識作為修整器性能之一指標。此磨損可藉由放大觀測而容易地辨識。在一態樣中,放大倍率可至少為50倍。因此,藉由在放大倍率下觀測該修整器,可容易地藉由辨識具有於一些修整後之磨損的顆粒而確認承擔實質上修整動作之顆粒數目。
應注意的是,雖然上述本發明係主要為化學機械研磨墊修整器,但其它精密研磨及/或研磨工件都可以認定在本發明之範疇中。因此,於此所揭露之技術及教示都可另外應用於此等工件中。
此外,應注意的是,習知化學機械研磨加工技術,包括研磨墊修整,已侷限於積體電路之臨界尺寸。然而,本發明之化學機械研磨修整裝置及技術可提供具有小於或等於45奈米、32奈米、28奈米、22奈米或更小之積體電路臨界尺寸之晶圓加工。
當然,這是可以理解的是,上述的配置僅是為了說明本發明之原則應用。許多修改和替代的配置,都可以由本發明相關技術領域者在不違背本發明的精神和範圍的情況下,可以設計出許多修改和替代的配置,在所附的申請專利範圍已涵蓋此類的修改及配置。因此,雖然前述內容已描述本發明的特殊性及結合本發明認為最具體及最佳之實施例,但在不違背此處的原則及概念下,都可以由本發明相關技術領域者呈現出許多修改,包括,不同的尺寸、物質、外形、型式、功能,及運作、組裝及使用方式,並不侷限於此。
402‧‧‧第一單層超研磨顆粒
404‧‧‧金屬支撐層
406‧‧‧第二單層超研磨顆粒
Claims (20)
- 一種修整化學機械研磨墊之方法,包括:下壓一化學機械研磨墊修整器對著一化學機械研磨墊,該修整器包括一單層超研磨顆粒,係為複數個超研磨顆粒突出於一基質層,其中,該單層超研磨顆粒之最高突出尖端與第2個最高突出尖端之突出距離差異為小於或等於約10微米,以及且該單層超研磨顆粒之最高10個突出尖端之突出距離差異為約20微米或更小:以及旋轉對著該化學機械研磨墊之該修整器,使得切割出該具有一最大切割深度約60微米之化學機械研磨墊的粗糙度。
- 如申請專利範圍第1項所述之方法,其中當旋轉該修整器時,該複數個超研磨顆粒之至少100個尖端切入粗糙化該化學機械研磨墊。
- 如申請專利範圍第1項所述之方法,其中當旋轉該修整器時,該複數個超研磨顆粒之至少50個尖端切入粗糙化該化學機械研磨墊。
- 如申請專利範圍第1項所述之方法,其中當旋轉該修整器時,該複數個超研磨顆粒之至少25個尖端切入粗糙化該化學機械研磨墊。
- 如申請專利範圍第1項所述之方法,其中實質上該所有粗糙度係藉由設置位於該修整器之一周圍區域的超研磨顆粒而在該化學機械研磨墊上切割出。
- 如申請專利範圍第5項所述之方法,其中該周圍區域從該修整器之外邊緣往內朝向該修整器之中心點延伸直至該修整器半徑之約90%。
- 如申請專利範圍第5項所述之方法,其中該周圍區域從該修整器之外邊緣往內朝向該修整器之中心點延伸直至該修整器半徑之約50%。
- 如申請專利範圍第5項所述之方法,其中該周圍區域從該修整器之外邊緣往內朝向該修整器之中心點延伸直至該修整器半徑之約33%。
- 如申請專利範圍第1項所述之方法,其中實質上該全部超研磨顆粒設置在該修整器之該周圍區域上。
- 如申請專利範圍第1項所述之方法,其中實質上該全部超研磨顆粒以預定圖案均勻排列在該修整器之該周圍區域上。
- 如申請專利範圍第1項所述之方法,更包括:旋轉該化學機械研磨墊;施加一研磨液體於該旋轉中化學機械研磨墊之該拋光表面上;以及施加一工件於該拋光表面,使得藉由與該研磨液結合之粗糙化而拋光該工件。
- 如申請專利範圍第11項所述之方法,其中,該工件係為一半導體元件。
- 如申請專利範圍第12項所述之方法,其中該半導體元件含有一層或多層的銅、鎢、一氧化物層、或其組合。
- 如申請專利範圍第12項所述之方法,其中該半導體元件具有一小於或等於28奈米的節點尺寸。
- 如申請專利範圍第12項所述之方法,其中該半導體元件具有一小於或等於約30奈米的線寬。
- 如申請專利範圍第12項所述之方法,其中該半導體元件係一具有尺寸大於400微米之晶圓。
- 如申請專利範圍第11項所述之方法,其中該研磨液包括一磨料,該磨料係選自由二氧化矽、氧化鋁、二氧化鈰及其組合所組成之群組。。
- 如申請專利範圍第11項所述之方法,其中該研磨液包括一氧化化合物。
- 如申請專利範圍第17項所述之方法,其中該氧化化合物係為過氧化氫。
- 如申請專利範圍第11項所述之方法,其中該化學機械研磨墊係為聚氨基甲酸酯。
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Also Published As
Publication number | Publication date |
---|---|
US20140099868A1 (en) | 2014-04-10 |
TW201404538A (zh) | 2014-02-01 |
US20180222009A1 (en) | 2018-08-09 |
US9138862B2 (en) | 2015-09-22 |
US20160263723A1 (en) | 2016-09-15 |
WO2013177472A1 (en) | 2013-11-28 |
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