TWI545571B - 存取快閃記憶體的方法及相關的控制器與記憶裝置 - Google Patents

存取快閃記憶體的方法及相關的控制器與記憶裝置 Download PDF

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Publication number
TWI545571B
TWI545571B TW103105359A TW103105359A TWI545571B TW I545571 B TWI545571 B TW I545571B TW 103105359 A TW103105359 A TW 103105359A TW 103105359 A TW103105359 A TW 103105359A TW I545571 B TWI545571 B TW I545571B
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TW
Taiwan
Prior art keywords
data page
data
flash memory
significant bit
page
Prior art date
Application number
TW103105359A
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English (en)
Chinese (zh)
Other versions
TW201533740A (zh
Inventor
楊宗杰
Original Assignee
慧榮科技股份有限公司
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Publication date
Application filed by 慧榮科技股份有限公司 filed Critical 慧榮科技股份有限公司
Priority to TW103105359A priority Critical patent/TWI545571B/zh
Priority to CN201410174841.4A priority patent/CN104850514B/zh
Priority to CN201810002843.3A priority patent/CN108241473B/zh
Priority to US14/617,955 priority patent/US9489143B2/en
Priority to KR1020150024175A priority patent/KR20150097433A/ko
Publication of TW201533740A publication Critical patent/TW201533740A/zh
Application granted granted Critical
Publication of TWI545571B publication Critical patent/TWI545571B/zh

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614—Improving the reliability of storage systems
    • G06F3/0619—Improving the reliability of storage systems in relation to data integrity, e.g. data losses, bit errors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • G06F3/0659—Command handling arrangements, e.g. command buffers, queues, command scheduling
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0683—Plurality of storage devices
    • G06F3/0688—Non-volatile semiconductor memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2206/00—Indexing scheme related to dedicated interfaces for computers
    • G06F2206/10—Indexing scheme related to storage interfaces for computers, indexing schema related to group G06F3/06
    • G06F2206/1014—One time programmable [OTP] memory, e.g. PROM, WORM

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Security & Cryptography (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
TW103105359A 2014-02-18 2014-02-18 存取快閃記憶體的方法及相關的控制器與記憶裝置 TWI545571B (zh)

Priority Applications (5)

Application Number Priority Date Filing Date Title
TW103105359A TWI545571B (zh) 2014-02-18 2014-02-18 存取快閃記憶體的方法及相關的控制器與記憶裝置
CN201410174841.4A CN104850514B (zh) 2014-02-18 2014-04-28 存取闪存的方法及相关的控制器与记忆装置
CN201810002843.3A CN108241473B (zh) 2014-02-18 2014-04-28 存取闪存的方法及相关的控制器
US14/617,955 US9489143B2 (en) 2014-02-18 2015-02-10 Method for accessing flash memory and associated controller and memory device
KR1020150024175A KR20150097433A (ko) 2014-02-18 2015-02-17 플래시 메모리에 액세스하는 방법, 그리고 관련 컨트롤러 및 메모리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103105359A TWI545571B (zh) 2014-02-18 2014-02-18 存取快閃記憶體的方法及相關的控制器與記憶裝置

Publications (2)

Publication Number Publication Date
TW201533740A TW201533740A (zh) 2015-09-01
TWI545571B true TWI545571B (zh) 2016-08-11

Family

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Family Applications (1)

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TW103105359A TWI545571B (zh) 2014-02-18 2014-02-18 存取快閃記憶體的方法及相關的控制器與記憶裝置

Country Status (4)

Country Link
US (1) US9489143B2 (ko)
KR (1) KR20150097433A (ko)
CN (2) CN104850514B (ko)
TW (1) TWI545571B (ko)

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US10042575B2 (en) * 2015-03-06 2018-08-07 Toshiba Memory Corporation Memory system including a battery powered buffer with a storage capacity of that buffer dependent on the voltage level of the battery
TWI566253B (zh) * 2015-09-02 2017-01-11 慧榮科技股份有限公司 用來管理一記憶裝置之方法以及記憶裝置與控制器
TWI571742B (zh) 2015-10-07 2017-02-21 慧榮科技股份有限公司 資料儲存裝置及資料維護方法
CN105677244B (zh) * 2015-12-31 2019-04-09 记忆科技(深圳)有限公司 一种降低tlc闪存的固态硬盘写放大的方法
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US10019314B2 (en) 2016-04-27 2018-07-10 Silicon Motion Inc. Flash memory apparatus and storage management method for flash memory
CN111679787B (zh) * 2016-04-27 2023-07-18 慧荣科技股份有限公司 闪存装置、闪存控制器及闪存存储管理方法
CN107977282B (zh) * 2017-12-20 2021-01-26 北京兆易创新科技股份有限公司 一种SPI-Nand读取数据页的方法及装置
US11704234B2 (en) * 2020-04-28 2023-07-18 Silicon Motion, Inc. Method for accessing flash memory module and associated package

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Also Published As

Publication number Publication date
CN104850514B (zh) 2018-01-30
CN104850514A (zh) 2015-08-19
CN108241473A (zh) 2018-07-03
US9489143B2 (en) 2016-11-08
US20150234609A1 (en) 2015-08-20
CN108241473B (zh) 2021-01-26
KR20150097433A (ko) 2015-08-26
TW201533740A (zh) 2015-09-01

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