TWI543396B - 多-異質接面奈米粒子、其製造方法及包含該粒子之製品 - Google Patents

多-異質接面奈米粒子、其製造方法及包含該粒子之製品 Download PDF

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TWI543396B
TWI543396B TW103109388A TW103109388A TWI543396B TW I543396 B TWI543396 B TW I543396B TW 103109388 A TW103109388 A TW 103109388A TW 103109388 A TW103109388 A TW 103109388A TW I543396 B TWI543396 B TW I543396B
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nanoparticle
dimensional
semiconductor
precursor
heterojunction
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TW103109388A
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TW201445767A (zh
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幕斯柏 西門
納瑞 歐
尤 任雅
索伊 納摩
彼得 崔夫納斯
柯候瑞 德斯巴德
傑奇 喬
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伊利諾大學受託人董事會
羅門哈斯電子材料有限公司
陶氏全球科技責任有限公司
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TW103109388A 2013-03-15 2014-03-14 多-異質接面奈米粒子、其製造方法及包含該粒子之製品 TWI543396B (zh)

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US13/834,363 US8937294B2 (en) 2013-03-15 2013-03-15 Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same

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US (2) US8937294B2 (OSRAM)
EP (1) EP2778122B1 (OSRAM)
JP (1) JP6487625B2 (OSRAM)
KR (1) KR102212759B1 (OSRAM)
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WO2020261347A1 (ja) * 2019-06-24 2020-12-30 シャープ株式会社 発光素子
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EP2778122A1 (en) 2014-09-17
CN104046360A (zh) 2014-09-17
TW201445767A (zh) 2014-12-01
JP2014183316A (ja) 2014-09-29
KR102212759B1 (ko) 2021-02-04
CN104046360B (zh) 2017-09-12
US20140264258A1 (en) 2014-09-18
US8937294B2 (en) 2015-01-20
US20150364645A1 (en) 2015-12-17
KR20140113588A (ko) 2014-09-24
US10510924B2 (en) 2019-12-17
JP6487625B2 (ja) 2019-03-20

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