TWI543396B - 多-異質接面奈米粒子、其製造方法及包含該粒子之製品 - Google Patents
多-異質接面奈米粒子、其製造方法及包含該粒子之製品 Download PDFInfo
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- TWI543396B TWI543396B TW103109388A TW103109388A TWI543396B TW I543396 B TWI543396 B TW I543396B TW 103109388 A TW103109388 A TW 103109388A TW 103109388 A TW103109388 A TW 103109388A TW I543396 B TWI543396 B TW I543396B
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- heterojunction
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Classifications
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- H—ELECTRICITY
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/0256—Selenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
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- H01L21/02601—Nanoparticles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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| JP6553735B2 (ja) | 2015-03-13 | 2019-07-31 | ダウ グローバル テクノロジーズ エルエルシー | ナノ構造材料の方法及び素子 |
| US20180273844A1 (en) * | 2015-12-31 | 2018-09-27 | Dow Global Technologies Llc | Continuous flow syntheses of nanostructure materials |
| EP3188260B1 (en) | 2015-12-31 | 2020-02-12 | Dow Global Technologies Llc | Nanostructure material structures and methods |
| TWI751144B (zh) * | 2016-03-24 | 2022-01-01 | 美商陶氏全球科技責任有限公司 | 光電子裝置及使用方法 |
| TWI744296B (zh) * | 2016-03-24 | 2021-11-01 | 美商陶氏全球科技責任有限公司 | 光電子裝置及使用方法 |
| US10544042B2 (en) * | 2017-01-17 | 2020-01-28 | International Business Machines Corporation | Nanoparticle structure and process for manufacture |
| US20210130690A1 (en) * | 2017-04-19 | 2021-05-06 | Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd | Semiconductor nanostructures and applications |
| CN110544746B (zh) * | 2018-05-29 | 2021-03-16 | Tcl科技集团股份有限公司 | 发光二极管及其制备方法 |
| JP7072169B2 (ja) * | 2018-06-22 | 2022-05-20 | スタンレー電気株式会社 | ナノ粒子集合体とその製造方法 |
| WO2020261347A1 (ja) * | 2019-06-24 | 2020-12-30 | シャープ株式会社 | 発光素子 |
| CN110499489B (zh) * | 2019-07-23 | 2021-06-01 | 电子科技大学 | 一种半导体/金属异质结纳米线阵列材料的制备工艺 |
| CN111162187B (zh) * | 2019-12-31 | 2022-07-05 | 广东聚华印刷显示技术有限公司 | 双异质结纳米棒及其制备方法及发光二极管 |
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| US20140264258A1 (en) | 2014-09-18 |
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