CN104046360B - 多异质结纳米颗粒、其制备方法以及包含该纳米颗粒的制品 - Google Patents

多异质结纳米颗粒、其制备方法以及包含该纳米颗粒的制品 Download PDF

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CN104046360B
CN104046360B CN201410098121.4A CN201410098121A CN104046360B CN 104046360 B CN104046360 B CN 104046360B CN 201410098121 A CN201410098121 A CN 201410098121A CN 104046360 B CN104046360 B CN 104046360B
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semiconductor
end cap
nanoparticle
nano particle
nanoparticles
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CN104046360A (zh
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M·沈
N·吴
Y·翟
S·南
P·特雷福纳斯
K·德什潘德
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Dow Global Technologies LLC
University of Illinois System
DuPont Electronic Materials International LLC
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Dow Global Technologies LLC
Rohm and Haas Electronic Materials LLC
University of Illinois System
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CN201410098121.4A 2013-03-15 2014-03-17 多异质结纳米颗粒、其制备方法以及包含该纳米颗粒的制品 Expired - Fee Related CN104046360B (zh)

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US13/834,363 US8937294B2 (en) 2013-03-15 2013-03-15 Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
US13/834,363 2013-03-15

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CN104046360B true CN104046360B (zh) 2017-09-12

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US (2) US8937294B2 (OSRAM)
EP (1) EP2778122B1 (OSRAM)
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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8937294B2 (en) * 2013-03-15 2015-01-20 Rohm And Haas Electronic Materials Llc Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
JP6553735B2 (ja) 2015-03-13 2019-07-31 ダウ グローバル テクノロジーズ エルエルシー ナノ構造材料の方法及び素子
US20180273844A1 (en) * 2015-12-31 2018-09-27 Dow Global Technologies Llc Continuous flow syntheses of nanostructure materials
EP3188260B1 (en) 2015-12-31 2020-02-12 Dow Global Technologies Llc Nanostructure material structures and methods
TWI751144B (zh) * 2016-03-24 2022-01-01 美商陶氏全球科技責任有限公司 光電子裝置及使用方法
TWI744296B (zh) * 2016-03-24 2021-11-01 美商陶氏全球科技責任有限公司 光電子裝置及使用方法
US10544042B2 (en) * 2017-01-17 2020-01-28 International Business Machines Corporation Nanoparticle structure and process for manufacture
US20210130690A1 (en) * 2017-04-19 2021-05-06 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd Semiconductor nanostructures and applications
CN110544746B (zh) * 2018-05-29 2021-03-16 Tcl科技集团股份有限公司 发光二极管及其制备方法
JP7072169B2 (ja) * 2018-06-22 2022-05-20 スタンレー電気株式会社 ナノ粒子集合体とその製造方法
WO2020261347A1 (ja) * 2019-06-24 2020-12-30 シャープ株式会社 発光素子
CN110499489B (zh) * 2019-07-23 2021-06-01 电子科技大学 一种半导体/金属异质结纳米线阵列材料的制备工艺
CN111162187B (zh) * 2019-12-31 2022-07-05 广东聚华印刷显示技术有限公司 双异质结纳米棒及其制备方法及发光二极管
KR102875120B1 (ko) * 2021-05-11 2025-10-22 삼성디스플레이 주식회사 양자점 제조방법, 상기 제조방법으로 제조된 양자점, 상기 양자점을 포함하는 광학 부재 및 상기 양자점을 포함하는 전자 장치

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6788453B2 (en) 2002-05-15 2004-09-07 Yissum Research Development Company Of The Hebrew Univeristy Of Jerusalem Method for producing inorganic semiconductor nanocrystalline rods and their use
JP4931348B2 (ja) 2002-08-13 2012-05-16 マサチューセッツ インスティテュート オブ テクノロジー 半導体ナノクリスタルヘテロ構造体
US7534488B2 (en) 2003-09-10 2009-05-19 The Regents Of The University Of California Graded core/shell semiconductor nanorods and nanorod barcodes
US7298383B2 (en) 2003-06-11 2007-11-20 Agfa Healthcare Method and user interface for modifying at least one of contrast and density of pixels of a processed image
US7303628B2 (en) 2004-03-23 2007-12-04 The Regents Of The University Of California Nanocrystals with linear and branched topology
EP1891686B1 (en) 2005-06-15 2011-08-10 Yissum Research Development Company Of The Hebrew University Of Jerusalem Iii-v semiconductor core-heteroshell nanocrystals, method for their manufacture and their applications
JP2007184566A (ja) * 2005-12-06 2007-07-19 Canon Inc 半導体ナノワイヤを用いた半導体素子、それを用いた表示装置及び撮像装置
US7394094B2 (en) * 2005-12-29 2008-07-01 Massachusetts Institute Of Technology Semiconductor nanocrystal heterostructures
US7465954B2 (en) 2006-04-28 2008-12-16 Hewlett-Packard Development Company, L.P. Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles
US8049203B2 (en) * 2006-12-22 2011-11-01 Qunano Ab Nanoelectronic structure and method of producing such
KR100904588B1 (ko) * 2007-07-05 2009-06-25 삼성전자주식회사 코어/쉘 형태의 나노와이어를 제조하는 방법, 그에 의해제조된 나노와이어 및 이를 포함하는 나노와이어 소자
US7960715B2 (en) * 2008-04-24 2011-06-14 University Of Iowa Research Foundation Semiconductor heterostructure nanowire devices
TWI385118B (zh) 2008-11-28 2013-02-11 Univ Nat Cheng Kung Heterogeneous surface nanowire structure and its manufacturing method
TW201023393A (en) 2008-12-05 2010-06-16 Univ Nat Cheng Kung Manufacturing method for heterojunction nano-wire structure using nano-zinc oxide wire as substrate
US20120199187A1 (en) * 2009-10-22 2012-08-09 Sol Voltaics Ab Nanowire tunnel diode and method for making the same
US8563395B2 (en) * 2009-11-30 2013-10-22 The Royal Institute For The Advancement Of Learning/Mcgill University Method of growing uniform semiconductor nanowires without foreign metal catalyst and devices thereof
WO2011090863A1 (en) * 2010-01-19 2011-07-28 Eastman Kodak Company Ii-vi core-shell semiconductor nanowires
US8212236B2 (en) * 2010-01-19 2012-07-03 Eastman Kodak Company II-VI core-shell semiconductor nanowires
KR20110092600A (ko) 2010-02-09 2011-08-18 삼성전기주식회사 InP 양자점의 제조 방법 및 이에 따른 InP 양자점
CN102985359A (zh) * 2010-04-23 2013-03-20 普度研究基金会 基于超薄纳米线和基于纳米级异质结构的热电转换结构及其制备方法
TWI409963B (zh) 2010-05-07 2013-09-21 Huang Chung Cheng 同軸奈米線結構的太陽能電池
FR2973936B1 (fr) * 2011-04-05 2014-01-31 Commissariat Energie Atomique Procede de croissance selective sur une structure semiconductrice
US8937294B2 (en) * 2013-03-15 2015-01-20 Rohm And Haas Electronic Materials Llc Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same

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EP2778122A1 (en) 2014-09-17
CN104046360A (zh) 2014-09-17
TW201445767A (zh) 2014-12-01
JP2014183316A (ja) 2014-09-29
KR102212759B1 (ko) 2021-02-04
US20140264258A1 (en) 2014-09-18
US8937294B2 (en) 2015-01-20
US20150364645A1 (en) 2015-12-17
KR20140113588A (ko) 2014-09-24
US10510924B2 (en) 2019-12-17
JP6487625B2 (ja) 2019-03-20
TWI543396B (zh) 2016-07-21

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