TWI539624B - 具有圖形化界面之發光元件及其製造方法 - Google Patents

具有圖形化界面之發光元件及其製造方法 Download PDF

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Publication number
TWI539624B
TWI539624B TW101119052A TW101119052A TWI539624B TW I539624 B TWI539624 B TW I539624B TW 101119052 A TW101119052 A TW 101119052A TW 101119052 A TW101119052 A TW 101119052A TW I539624 B TWI539624 B TW I539624B
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TW
Taiwan
Prior art keywords
pattern structures
pattern
regions
different
structures
Prior art date
Application number
TW101119052A
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English (en)
Chinese (zh)
Other versions
TW201349565A (zh
Inventor
富振華
李政憲
黃啟豪
Original Assignee
晶元光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 晶元光電股份有限公司 filed Critical 晶元光電股份有限公司
Priority to TW101119052A priority Critical patent/TWI539624B/zh
Priority to JP2013110474A priority patent/JP6161955B2/ja
Priority to US13/903,169 priority patent/US9012942B2/en
Priority to DE102013105480.3A priority patent/DE102013105480B4/de
Priority to KR1020130060298A priority patent/KR101863714B1/ko
Priority to CN201310202914.1A priority patent/CN103456854B/zh
Publication of TW201349565A publication Critical patent/TW201349565A/zh
Application granted granted Critical
Publication of TWI539624B publication Critical patent/TWI539624B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
TW101119052A 2012-05-28 2012-05-28 具有圖形化界面之發光元件及其製造方法 TWI539624B (zh)

Priority Applications (6)

Application Number Priority Date Filing Date Title
TW101119052A TWI539624B (zh) 2012-05-28 2012-05-28 具有圖形化界面之發光元件及其製造方法
JP2013110474A JP6161955B2 (ja) 2012-05-28 2013-05-27 パターン化界面を有する発光素子及びその製造方法
US13/903,169 US9012942B2 (en) 2012-05-28 2013-05-28 Light-emitting device having patterned interface and the manufacturing method thereof
DE102013105480.3A DE102013105480B4 (de) 2012-05-28 2013-05-28 Licht-emittierende Vorrichtung und Herstellverfahren derselben
KR1020130060298A KR101863714B1 (ko) 2012-05-28 2013-05-28 패턴화 인터페이스를 구비한 발광소자 및 그 제조 방법
CN201310202914.1A CN103456854B (zh) 2012-05-28 2013-05-28 具有图形化界面的发光元件及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW101119052A TWI539624B (zh) 2012-05-28 2012-05-28 具有圖形化界面之發光元件及其製造方法

Publications (2)

Publication Number Publication Date
TW201349565A TW201349565A (zh) 2013-12-01
TWI539624B true TWI539624B (zh) 2016-06-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW101119052A TWI539624B (zh) 2012-05-28 2012-05-28 具有圖形化界面之發光元件及其製造方法

Country Status (6)

Country Link
US (1) US9012942B2 (enExample)
JP (1) JP6161955B2 (enExample)
KR (1) KR101863714B1 (enExample)
CN (1) CN103456854B (enExample)
DE (1) DE102013105480B4 (enExample)
TW (1) TWI539624B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12140784B2 (en) 2021-02-02 2024-11-12 Darwin Precisions Corporation Optical diffusing element and light emitting assembly for three-dimension sensing

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US10522714B2 (en) 2011-06-15 2019-12-31 Sensor Electronic Technology, Inc. Device with inverted large scale light extraction structures
US10319881B2 (en) * 2011-06-15 2019-06-11 Sensor Electronic Technology, Inc. Device including transparent layer with profiled surface for improved extraction
CN103367555B (zh) * 2012-03-28 2016-01-20 清华大学 发光二极管的制备方法
CN104969367B (zh) * 2013-02-11 2019-04-16 亮锐控股有限公司 发光器件和用于制造发光器件的方法
TW201523917A (zh) * 2013-12-12 2015-06-16 Hwasun Quartek Corp 磊晶基板、其製造方法及發光二極體
TWI623115B (zh) * 2014-10-09 2018-05-01 新世紀光電股份有限公司 具粗化表面之薄膜式覆晶發光二極體及其製造方法
DE102016200953A1 (de) * 2016-01-25 2017-07-27 Osram Opto Semiconductors Gmbh Substrat mit Strukturelementen und Halbleiterbauelement
JP6579038B2 (ja) * 2016-05-30 2019-09-25 豊田合成株式会社 半導体発光素子の製造方法
US10243099B2 (en) * 2017-05-16 2019-03-26 Epistar Corporation Light-emitting device
US20220231197A1 (en) * 2019-08-29 2022-07-21 Quanzhou Sanan Semiconductor Technology Co., Ltd. Flip-chip light emitting device and production method thereof
KR102802778B1 (ko) * 2019-12-11 2025-05-07 엘지전자 주식회사 마이크로 led와 관련된 디스플레이 장치 및 이의 제조 방법
WO2021138871A1 (zh) * 2020-01-09 2021-07-15 苏州晶湛半导体有限公司 半导体结构及其衬底、半导体结构及其衬底的制作方法
CN112820806B (zh) * 2020-12-25 2022-12-20 福建晶安光电有限公司 一种图形衬底及其制作方法以及led结构及其制作方法
CN115207175B (zh) * 2022-08-26 2024-05-28 江苏第三代半导体研究院有限公司 基于图形化衬底的发光二极管芯片及其制备方法

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KR20060131327A (ko) * 2005-06-16 2006-12-20 엘지전자 주식회사 발광 다이오드의 제조 방법
KR100640497B1 (ko) * 2005-11-24 2006-11-01 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자
JP2010510661A (ja) * 2006-11-15 2010-04-02 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 複数の抽出器による高い光抽出効率の発光ダイオード（ｌｅｄ）
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12140784B2 (en) 2021-02-02 2024-11-12 Darwin Precisions Corporation Optical diffusing element and light emitting assembly for three-dimension sensing

Also Published As

Publication number Publication date
CN103456854A (zh) 2013-12-18
JP2013247367A (ja) 2013-12-09
US9012942B2 (en) 2015-04-21
JP6161955B2 (ja) 2017-07-12
US20130313596A1 (en) 2013-11-28
DE102013105480B4 (de) 2021-11-04
KR101863714B1 (ko) 2018-06-01
CN103456854B (zh) 2018-06-29
DE102013105480A1 (de) 2013-11-28
TW201349565A (zh) 2013-12-01
KR20130133142A (ko) 2013-12-06

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