TWI538148B - Exposure method and exposure apparatus - Google Patents
Exposure method and exposure apparatus Download PDFInfo
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- TWI538148B TWI538148B TW100108446A TW100108446A TWI538148B TW I538148 B TWI538148 B TW I538148B TW 100108446 A TW100108446 A TW 100108446A TW 100108446 A TW100108446 A TW 100108446A TW I538148 B TWI538148 B TW I538148B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2035—Exposure; Apparatus therefor simultaneous coating and exposure; using a belt mask, e.g. endless
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
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- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
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- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
本發明係關於一種曝光方法及曝光裝置,一邊將無圖案基板朝一定方向移動一邊依序曝光圖案;更詳而言之,係關於一種曝光方法及曝光裝置,對大型之無圖案基板以高精度且低成本來曝光圖案。 The present invention relates to an exposure method and an exposure apparatus for sequentially exposing a pattern while moving a pattern-free substrate in a certain direction; more specifically, with respect to an exposure method and an exposure apparatus, high precision for a large unpatterned substrate And low cost to expose the pattern.
習知此種曝光方法,係於事先形成有成為曝光基準之基準圖案的基準基板上重疊無圖案之被曝光體而將兩者一起搬運,與此同時,從被曝光體上下其中一側利用攝像機構來攝像上述基準圖案以檢測於該基準圖案所事先設定之基準位置,以該基準位置為基準而進行在與基板搬運方向呈正交方向上掃描之光束的照射開始或是照射停止之控制,而於無圖案之被曝光體上依序形成圖案(例如參照日本特開2005-316167號公報)。 In the above-described exposure method, the unexposed body is superposed on the reference substrate on which the reference pattern to be used as the exposure reference is formed, and the both are conveyed together, and at the same time, the image is taken from the upper and lower sides of the object to be exposed. The mechanism captures the reference pattern to detect a reference position set in advance by the reference pattern, and performs control of starting or stopping the irradiation of the light beam scanned in a direction orthogonal to the substrate conveyance direction based on the reference position. On the other hand, the pattern is sequentially formed on the unexposed body (see, for example, Japanese Laid-Open Patent Publication No. 2005-316167).
但是,此種習知之曝光方法,必須準備事先形成有基準圖案的基準基板,於形成此基準基板上會花費工夫,有曝光製程之成本變高之虞。 However, in such a conventional exposure method, it is necessary to prepare a reference substrate in which a reference pattern is formed in advance, and it takes time to form the reference substrate, and the cost of the exposure process becomes high.
此外,當被曝光體為大型之情況,基準基板也配合該該大型被曝光體而大型化,結果為了於大型無圖案基板形成基準圖案,必須採用大型之罩體或大型之曝光裝置,基準基板有變得昂貴之虞。 Further, when the object to be exposed is large, the reference substrate is also increased in size in accordance with the large-sized object to be exposed. As a result, in order to form the reference pattern on the large-sized pattern-free substrate, it is necessary to use a large cover or a large exposure device, and the reference substrate. There are rumors that become expensive.
是以,本發明係因應於此種問題點,其目的在於提 供一種曝光方法及曝光裝置,可於大型無圖案基板以高精度且低成本來曝光圖案。 Therefore, the present invention is based on such a problem, and its purpose is to provide Provided by an exposure method and an exposure apparatus, the pattern can be exposed with high precision and low cost on a large unpatterned substrate.
為了達成上述目的,本發明之一種曝光方法,係一邊使得基板朝一定方向移動,一邊經由光罩於該基板上之圖案形成區域依序曝光出事先決定之圖案;其特徵在於,係實行下述階段:於該基板上曝光該圖案,與此同時,對基板移動方向之交叉方向的該圖案形成區域外照射雷射光,而於該基板面賦予一定形狀之傷痕來形成對準標記之階段;檢測該對準標記相對於該基板移動方向之下游位置所事先決定之基準位置在基板移動方向之交叉方向的位偏之階段;為了校正該位偏而使得該基板與該光罩進行相對移動之階段;以及於先曝光之該圖案的後續位置曝光下一圖案之階段。 In order to achieve the above object, an exposure method of the present invention sequentially exposes a predetermined pattern through a pattern forming region on a substrate through a mask while moving the substrate in a certain direction; a stage of exposing the pattern on the substrate, and simultaneously irradiating the outside of the pattern forming region in the direction in which the substrate moves in the direction of the substrate, and imparting a shape of the flaw on the substrate surface to form an alignment mark; a stage in which the alignment mark is determined in a direction in which the reference position determined in advance in the moving direction of the substrate is in the direction of the crossing direction of the substrate moving direction; and the stage in which the substrate and the mask are relatively moved in order to correct the positional deviation And the stage of exposing the next pattern to the subsequent position of the pattern that was first exposed.
藉由此種構成,一邊使得基板朝一定方向移動、一邊經由光罩於基板上之圖案形成區域曝光圖案,與此同時,對基板移動方向之交叉方向的該圖案形成區域外照射雷射光,於基板面賦予一定形狀之傷痕來形成對準標記,檢測對準標記相對於基板移動方向之下游位置所事先決定之基準位置在基板移動方向之交叉方向的位偏,為了校正該位偏而使得基板與光罩進行相對移動,於先曝光之該圖案的後續位置曝光下一圖案。藉此,即使基板為無圖案亦能以高位置精度依序接續曝光圖案。此外,由於無需準備如習知技術般之事先形成有基準圖案之基準基板,故即使為大型無圖案基板亦能以高 精度且低成本來曝光圖案。 According to this configuration, while the substrate is moved in a certain direction, the pattern is exposed through the pattern forming region on the substrate, and at the same time, the pattern forming region in the direction of the substrate moving direction is irradiated with the laser light. The substrate surface is provided with a certain shape of the flaw to form an alignment mark, and the positional deviation of the reference position determined in advance in the moving direction of the alignment mark relative to the substrate in the direction of the substrate is detected, and the substrate is offset in order to correct the positional deviation. Relative movement with the reticle exposes the next pattern at a subsequent location of the pattern that was previously exposed. Thereby, even if the substrate is unpatterned, the exposure pattern can be sequentially connected with high positional accuracy. In addition, since it is not necessary to prepare a reference substrate in which a reference pattern is formed in advance as in the prior art, it can be high even for a large unpatterned substrate. The pattern is exposed with precision and low cost.
此外,該光罩係於該基板移動方向之交叉方向的罩體圖案區域外形成有開口窗,讓該雷射光通過而於該基板上形成該對準標記;於該開口窗之該基板移動方向之下游位置形成有用以檢測該對準標記的對準用窗。藉此,雷射光通過在光罩之基板移動方向之交叉方向的罩體圖案區域外所形成之開口窗而照射於基板上形成對準標記,通過在該開口窗之基板移動方向之下游位置所形成之對準用窗來檢測對準標記。從而,前面一個曝光後之曝光圖案與光罩之罩體圖案的對位能以更高精度進行,可更為提高各曝光圖案之連接精度。 In addition, the reticle is formed with an opening window outside the mask pattern region in the intersecting direction of the substrate moving direction, and the laser light is passed through to form the alignment mark on the substrate; the substrate moving direction of the opening window The downstream location forms an alignment window useful for detecting the alignment mark. Thereby, the laser light is irradiated onto the substrate through the opening window formed outside the mask pattern region in the intersecting direction of the moving direction of the substrate of the reticle to form an alignment mark, and is located downstream of the substrate moving direction of the opening window. An alignment window is formed to detect the alignment mark. Therefore, the alignment of the exposure pattern after the previous exposure and the mask pattern of the reticle can be performed with higher precision, and the connection accuracy of each exposure pattern can be further improved.
再者,該光罩係於該基板移動方向之交叉方向的罩體圖案區域外且於曝光用雷射光之照射區域內形成有開口窗,於該開口窗具備聚光透鏡;藉由該曝光用雷射光進行曝光之同時,使得該雷射光通過該光罩之聚光透鏡而照射於該基板來形成該對準標記。藉此,以設置於光罩之開口窗(形成於基板移動方向之交叉方向的罩體圖案區域外且為曝光用雷射光之照射區域內)的聚光透鏡來將曝光用雷射光聚光於基板上,形成對準標記。從而,藉由設置聚光透鏡可增加對基板上所照射之光的能量密度,只要使用雷射光源作為曝光用光源,即可將曝光用雷射光之一部份聚光於基板上而使用於對準標記之形成上。因此,可將光源設定為曝光用雷射光源之一,可達成裝置之簡潔化。 Further, the mask is formed outside the mask pattern region in the direction in which the substrate moves in the direction of the irradiation, and an opening window is formed in the irradiation region of the exposure laser light, and the opening window is provided with a collecting lens; While the laser light is being exposed, the laser light is irradiated onto the substrate through the condensing lens of the reticle to form the alignment mark. Thereby, the exposure laser light is condensed by the condensing lens provided in the opening window of the reticle (the area outside the mask pattern area formed in the direction in which the substrate moves in the direction of the projection and in the irradiation region of the exposure laser light) An alignment mark is formed on the substrate. Therefore, by providing a concentrating lens, the energy density of the light irradiated on the substrate can be increased. By using a laser light source as the light source for exposure, a part of the laser light for exposure can be condensed on the substrate and used for The alignment marks are formed. Therefore, the light source can be set to one of the laser light sources for exposure, and the simplification of the device can be achieved.
此外,該光罩係於該基板移動方向之交叉方向上讓複數單位罩體互異地配置排列著;於該對準標記之位偏校正階段,係檢測於該各單位罩體之鄰接端部所形成之罩體間對準標記,以各單位罩體之配置排列間距成為一定值之方式進行各單位罩體之位置調整。藉此,檢測於基板移動方向之交叉方向互異地配置排列之複數單位罩體之鄰接端部所形成之罩體間對準標記,以各單位罩體之配置排列間距成為一定值之方式調整各單位罩體之位置並進行曝光。從而,可使用形狀小的複數單位罩體來對大型基板進行曝光,可降低光罩之製造成本。 In addition, the reticle is arranged such that the plurality of unit covers are arranged differently in the direction in which the substrate moves in the direction of the offset; in the positional correction phase of the alignment mark, the adjacent ends of the unit covers are detected. The inter-cover alignment marks are formed, and the position adjustment of each unit cover is performed so that the arrangement pitch of each unit cover is constant. In this manner, the inter-cover alignment marks formed by the adjacent end portions of the plurality of unit covers arranged in the intersecting direction of the substrate moving direction are detected, and the arrangement pitch of each unit cover is adjusted to a constant value. The position of the unit cover is exposed. Therefore, the large-sized substrate can be exposed by using a small-sized unit cover having a small shape, and the manufacturing cost of the photomask can be reduced.
此外,本發明之曝光裝置,係一邊使得基板朝一定方向移動、一邊經由光罩於該基板上之圖案形成區域依序曝光事先決定之圖案;其特徵在於,具備有:曝光用光源,係經由光罩對該基板上照射光源光來曝光;雷射光源,係對該基板照射雷射光以於基板移動方向之交叉方向的該圖案形成區域外之基板面賦予一定形狀之傷痕來形成對準標記;以及對準機構,係檢測該對準標記相對於該基板移動方向之下游位置所事先決定之基準位置在基板移動方向之交叉方向上的位偏,為了校正該位偏而使得該基板與該光罩進行相對移動來校正曝光之位偏。 Further, the exposure apparatus of the present invention sequentially exposes a pattern determined in advance by moving the substrate in a predetermined direction through a pattern forming region on the substrate via a photomask, and is characterized in that the light source for exposure is provided via The illuminating light is irradiated onto the substrate by the light source, and the laser light source is irradiated with the laser light to form a mark on the substrate surface outside the pattern forming area in the direction of the substrate moving direction to form an alignment mark. And an alignment mechanism that detects a positional deviation of a reference position determined in advance by a position downstream of the substrate in a moving direction of the substrate in a direction in which the substrate moves in a direction in which the substrate is offset in order to correct the positional deviation The mask is moved relative to correct the positional deviation of the exposure.
藉由此種構成,一邊使得基板朝一定方向移動、一邊從曝光用光源經由光罩而對該基板上照射光源光以於該基板上之圖案形成區域曝光圖案,與此同時,從雷 射光源對基板照射雷射光而對基板移動方向之交叉方向的該圖案形成區域外之基板面賦予一定形狀之傷痕來形成對準標記,藉由對準機構來檢測該對準標記相對於基板移動方向之下游位置所事先決定之基準位置在基板移動方向之交叉方向上的位偏,以校正該位偏的方式使得基板與光罩進行相對移動來校正曝光之位偏,而於先曝光之該圖案的後續位置曝光下一圖案。藉此,即便基板無圖案亦能以高位置精度來依序接續地曝光圖案。此外,由於無需準備如習知技術般之事先形成有基準圖案之基準基板,故即使是大型無圖案基板亦能以高精度且低成本來曝光圖案。 With such a configuration, while the substrate is moved in a certain direction, the substrate is irradiated with light source light from the exposure light source via the mask to pattern the area exposure pattern on the substrate, and at the same time, The light source irradiates the substrate with the laser light to form a mark on the surface of the substrate outside the pattern forming region in the direction in which the substrate moves in the direction of the substrate to form an alignment mark, and the alignment mechanism detects the movement of the alignment mark relative to the substrate. a positional deviation of a reference position determined in advance at a downstream position of the direction in a direction in which the substrate moves in a direction of intersection, and the relative displacement of the substrate and the reticle is corrected in a manner of correcting the positional deviation to correct the positional deviation of the exposure, and the exposure is prior to exposure The subsequent position of the pattern exposes the next pattern. Thereby, even if the substrate has no pattern, the pattern can be successively exposed with high positional accuracy. Further, since it is not necessary to prepare a reference substrate in which a reference pattern is formed in advance as in the prior art, the pattern can be exposed with high precision and at low cost even in a large unpatterned substrate.
再者,該光罩係於該基板移動方向之交叉方向的罩體圖案區域外形成有開口窗,讓該雷射光通過而於該基板上形成該對準標記;於該開口窗之該基板移動方向之下游位置形成有用以檢測該對準標記的對準用窗。藉此,通過光罩於基板移動方向之交叉方向的罩體圖案區域外所形成之開口窗將雷射光照射於基板上來形成對準標記,通過上述開口窗在基板移動方向之下游位置所形成之對準用窗檢測對準標記。從而,能以更高精度進行前面一個曝光之曝光圖案與光罩之罩體圖案的對位,可更為提升各曝光圖案之連接精度。 Furthermore, the reticle is formed with an opening window outside the mask pattern region in the intersecting direction of the substrate moving direction, and the laser light is passed through to form the alignment mark on the substrate; and the substrate is moved in the opening window A position downstream of the direction forms an alignment window useful for detecting the alignment mark. Thereby, the illuminating light is irradiated onto the substrate by the opening window formed outside the mask pattern region in the intersecting direction of the moving direction of the substrate to form an alignment mark, and the opening window is formed at a position downstream of the moving direction of the substrate. The alignment window detects the alignment mark. Therefore, the alignment of the exposure pattern of the previous exposure and the mask pattern of the reticle can be performed with higher precision, and the connection accuracy of each exposure pattern can be further improved.
此外,該光罩係於該基板移動方向之交叉方向的罩體圖案區域外且於曝光用雷射光之照射區域內形成有開口窗,於該開口窗具備聚光透鏡;該曝光用光源與雷 射光源係放射相同波長之雷射光的一個脈衝雷射光源;藉由該脈衝雷射光源所放射之雷射光進行曝光之同時,使得該雷射光通過該光罩之聚光透鏡而照射於該基板來形成該對準標記。藉此,以設置於光罩之開口窗(於基板移動方向之交叉方向的罩體圖案區域外且為曝光用雷射光之照射區域內所形成者)的聚光透鏡來將曝光用雷射光聚光於基板上,形成對準標記。從而,可藉由設置聚光透鏡而增加照射於基板上之光的能量密度,只要使用雷射光源作為曝光用光源,可將曝光用雷射光之一部份聚光於基板上而使用在對準標記之形成上。因而,光源可設定為曝光用雷射光源之一,可達成裝置之簡潔化。 Further, the reticle is formed outside the mask pattern region in the direction in which the substrate moves in the direction of the irradiation, and an opening window is formed in the irradiation region of the exposure laser light, and the louver is provided in the opening window; the exposure light source and the ray The light source is a pulsed laser light source that emits laser light of the same wavelength; and the laser light emitted by the pulsed laser light source is exposed, and the laser light is irradiated to the substrate through the condensing lens of the reticle. To form the alignment mark. Thereby, the exposure laser light is collected by a collecting lens provided in the opening window of the photomask (which is formed outside the mask pattern region in the direction in which the substrate moves in the direction of the projection and is in the irradiation region of the exposure laser light). An alignment mark is formed on the substrate. Therefore, the energy density of the light irradiated on the substrate can be increased by providing a condensing lens. As long as a laser light source is used as the light source for exposure, a part of the laser light for exposure can be condensed on the substrate and used in the pair. The formation of quasi-markers. Therefore, the light source can be set as one of the laser light sources for exposure, and the simplification of the device can be achieved.
此外,該光罩係於該基板移動方向之交叉方向上讓複數單位罩體互異地配置排列著;進一步具備單位罩體對準機構,係檢測於該各單位罩體之鄰接端部所形成之罩體間對準標記,以各單位罩體之配置排列間距成為一定值之方式進行各單位罩體之位置調整。藉此,藉由單位罩體對準機構來檢測於基板移動方向之交叉方向上互異地配置排列之複數單位罩體之鄰接端部所形成之罩體間對準標記,以各單位罩體之配置排列間距成為一定值之方式來調整各單位罩體之位置。從而,可使用形狀小的複數單位罩體來對大型基板進行曝光,可降低光罩之製造成本。 Further, the reticle is arranged such that the plurality of unit covers are arranged differently in the direction in which the substrate moves in the direction of the substrate; and the unit cover alignment mechanism is further formed to detect the adjacent end portions of the unit covers. The alignment between the cover members is performed so that the position of each unit cover is adjusted so that the arrangement pitch of each unit cover is constant. Thereby, the inter-cover alignment mark formed by the adjacent end portions of the plurality of unit covers arranged in the intersecting direction of the substrate moving direction in the direction in which the substrate moves in the direction is detected by the unit cover alignment mechanism, and the unit cover is formed by each unit cover The position of each unit cover is adjusted in such a manner that the arrangement pitch becomes a certain value. Therefore, the large-sized substrate can be exposed by using a small-sized unit cover having a small shape, and the manufacturing cost of the photomask can be reduced.
以下,基於所附圖式來詳細說明本發明之實施形態。圖1係顯示本發明之曝光裝置之第1實施形態之前視圖。此曝光裝置係一邊使得作為無圖案基板之薄膜1朝一定方向移動一邊依序曝光圖案者,構成上具備有:供給捲筒2、捲取捲筒3、雷射光源4、光罩5、對準機構6、以及控制機構7。 Hereinafter, embodiments of the present invention will be described in detail based on the drawings. Fig. 1 is a front view showing a first embodiment of an exposure apparatus of the present invention. In the exposure apparatus, the film 1 is sequentially exposed while moving the film 1 as a non-pattern substrate in a predetermined direction, and the supply roll 2, the take-up reel 3, the laser light source 4, the mask 5, and the pair are provided. The standard mechanism 6 and the control mechanism 7.
上述供給捲筒2係例如捲繞有長條狀薄膜1者,以可旋轉的方式保持於供給側旋轉軸8。此外,於供給側旋轉軸8係裝設有用以規範旋轉之圖示省略的煞車,而對薄膜1施加背張力用以賦予一定之張力。 The supply reel 2 is rotatably held by the supply-side rotary shaft 8, for example, in which the elongated film 1 is wound. Further, the supply-side rotary shaft 8 is provided with a brake for omitting the illustration of the normal rotation, and a back tension is applied to the film 1 to impart a certain tension.
於上述供給側旋轉軸8與在水平方向上離開既定距離而平行設置著之捲取側旋轉軸9係將捲取捲筒3保持為可進行旋轉。此捲取捲筒3係將從供給捲筒2所供給之薄膜1加以捲取者,藉由於捲取側旋轉軸9連結旋轉軸所具備之捲取馬達10來進行旋轉。 The take-up reel shaft 9 is provided so that the take-up reel 9 can be rotated while the supply-side rotary shaft 8 is disposed in parallel with a predetermined distance apart in the horizontal direction. The take-up reel 3 is obtained by winding the film 1 supplied from the supply reel 2, and the take-up motor 10 provided in the rotary shaft by the take-up side rotation shaft 9 is rotated.
此外,於上述供給捲筒2與捲取捲筒3之間設有一對之導柱(guide pole)11,可水平支持薄膜1。 Further, a pair of guide poles 11 are provided between the supply reel 2 and the take-up reel 3 to horizontally support the film 1.
於上述一對導柱11間水平跨掛著之薄膜1的上方設有雷射光源4。此雷射光源4係放射出波長為約355nm之曝光用雷射光L之脈衝雷射光源。此外,於雷射光源4之雷射光L行進方向下游側配置有耦合光學構件12,可放大雷射光L之光束徑且使得強度分布均勻化之後,將平行光照射於後述光罩5。此外,雖亦可取代雷射光源4改使用波長為313nm之水銀燈、氙閃光 燈,惟於以下之說明中係針對曝光用光源為雷射光源4之情形作描述。 A laser light source 4 is disposed above the film 1 that is horizontally hung between the pair of guide columns 11. This laser light source 4 is a pulsed laser light source that emits exposure laser light L having a wavelength of about 355 nm. Further, the coupling optical member 12 is disposed on the downstream side in the traveling direction of the laser light L of the laser light source 4, and the beam diameter of the laser light L can be amplified to uniformize the intensity distribution, and then the parallel light is irradiated to the mask 5 to be described later. In addition, although it is also possible to replace the laser light source 4, use a mercury lamp with a wavelength of 313 nm, and a flash of light. The lamp is described in the following description for the case where the exposure light source is the laser light source 4.
於上述雷射光源4之光軸上,係和於一對導柱11間水平跨掛著之薄膜1近接對向地設置有光罩5。此光罩5如圖2所示般,係成為形成於薄膜1上之曝光圖案的原版,於大致中央部具備有罩體圖案區域13(形成有對應於曝光圖案之罩體圖案的開口)。在與圖1中以箭頭X所示薄膜1之移動方向(以下稱為「X方向」)之交叉方向(以下稱為「Y方向」)呈平行的罩體圖案區域13之中心線上之於該罩體圖案區域13外且為上述曝光用雷射光L之照射區域14內形成有開口窗15,於該開口窗15設置聚光透鏡16而將雷射光L聚光於薄膜1上,於薄膜1上賦予一定形狀之傷痕而形成對準標記17(參照圖5)。此外,於上述開口窗15之X方向下游,從開口窗15之中心離開距離D形成有對準用窗18。於此種情況下,開口窗15與對準用窗18之間隔D係設定為罩體圖案區域13在X方向之寬度W以下(D≦W)。藉此,可於X方向連續地連接形成曝光圖案。此外,光罩5係藉由可移動於Y方向而形成之罩體平台19所保持著。 On the optical axis of the above-mentioned laser light source 4, a photomask 5 is disposed in close proximity to the film 1 which is horizontally hung between the pair of guide columns 11. As shown in FIG. 2, the mask 5 is an original plate of an exposure pattern formed on the film 1, and has a cover pattern region 13 (an opening in which a cover pattern corresponding to an exposure pattern is formed) at a substantially central portion. On the center line of the mask pattern region 13 which is parallel to the direction in which the moving direction of the film 1 (hereinafter referred to as "X direction" is indicated by the arrow X in FIG. 1 (hereinafter referred to as "Y direction") An opening window 15 is formed in the irradiation region 14 of the exposure laser light L outside the cover pattern region 13, and a condensing lens 16 is disposed in the opening window 15 to condense the laser light L on the film 1 on the film 1. A scratch of a certain shape is applied to form an alignment mark 17 (refer to FIG. 5). Further, an alignment window 18 is formed at a distance D from the center of the opening window 15 downstream of the opening window 15 in the X direction. In this case, the interval D between the opening window 15 and the alignment window 18 is set to be equal to or less than the width W of the mask pattern region 13 in the X direction (D≦W). Thereby, the exposure pattern can be continuously connected in the X direction. Further, the photomask 5 is held by a cover platform 19 which is formed to be movable in the Y direction.
以使得上述光罩5與薄膜1可在Y方向作相對移動之方式設置有對準機構6。此對準機構6係用以校正曝光之位偏者,具備有攝像機構20與罩體平台驅動機構21。此外,於圖1中符號29係平面反射鏡。 The alignment mechanism 6 is provided in such a manner that the photomask 5 and the film 1 are relatively movable in the Y direction. The alignment mechanism 6 is for correcting the positional deviation of the exposure, and includes an imaging mechanism 20 and a cover platform driving mechanism 21. Further, reference numeral 29 in Fig. 1 is a plane mirror.
上述攝像機構20係用以對形成於薄膜1上之上述對準標記17進行攝像者,為CCD攝像機,使得視野中心與光罩5之對準用窗18中心一致來配置著。此外,上述罩體平台驅動機構21係用以使得罩體平台19朝Y方向移動者,乃由步進馬達與齒輪所組合而構成者,或是電磁致動器、線性馬達等。 The imaging unit 20 is configured to image the alignment mark 17 formed on the film 1, and is a CCD camera such that the center of the field of view is aligned with the center of the alignment window 18 of the mask 5. Further, the cover platform driving mechanism 21 is configured to move the cover platform 19 in the Y direction, and is composed of a stepping motor and a gear, or an electromagnetic actuator, a linear motor, or the like.
與上述捲取馬達10、雷射光源4、攝像機構20、以及罩體平台驅動機構21作電氣連結地設有控制機構7。此控制機構7係計算出因薄膜1之移動誤差所致上述對準標記17在Y方向之位偏量,而移動上述光罩5來予以校正,如圖3所示般,具備有圖像處理部22、運算部23、記憶體24、馬達驅動控制部25、光源驅動部26、罩體平台驅動控制部27、以及控制部28。 A control mechanism 7 is provided in electrical connection with the winding motor 10, the laser light source 4, the imaging unit 20, and the cover platform driving mechanism 21. The control unit 7 calculates the positional deviation of the alignment mark 17 in the Y direction due to the movement error of the film 1, and moves the mask 5 to correct it. As shown in FIG. 3, the image processing is performed. The unit 22, the calculation unit 23, the memory 24, the motor drive control unit 25, the light source drive unit 26, the cover platform drive control unit 27, and the control unit 28.
上述圖像處理部22係對於攝像機構20所攝像之對準標記17的圖像進行處理,而檢測例如對準標記17之中心位置。此外,上述運算部23係運算對準用窗18之中心(基準位置)與對準標記17之中心之間的位偏量。再者,上述記憶體24係儲存上述對準標記17之中心位置、上述運算結果等。此外,上述馬達驅動控制部25係控制馬達之旋轉速度、驅動以及停止。再者,上述光源驅動部26係控制雷射光源4之功率、振盪頻率、亮燈以及熄燈。此外,上述罩體平台驅動控制部27係控制罩體平台驅動機構21之驅動而控制罩體平台19之移動方向以及移動量。此外,上述控制部28係以適當驅 動裝置全體之方式控制上述各要素之驅動。 The image processing unit 22 processes the image of the alignment mark 17 imaged by the imaging unit 20, and detects, for example, the center position of the alignment mark 17. Further, the calculation unit 23 calculates a positional deviation amount between the center (reference position) of the alignment window 18 and the center of the alignment mark 17. Further, the memory 24 stores the center position of the alignment mark 17, the calculation result, and the like. Further, the motor drive control unit 25 controls the rotational speed, drive, and stop of the motor. Furthermore, the light source driving unit 26 controls the power, the oscillation frequency, the lighting, and the light-off of the laser light source 4. Further, the cover platform drive control unit 27 controls the driving of the cover platform driving mechanism 21 to control the moving direction and the amount of movement of the cover platform 19. In addition, the above control unit 28 is appropriately driven The driving of each of the above elements is controlled in a manner of the entire moving device.
其次,針對以此方式所構成之曝光裝置之動作以及使用該曝光裝置所進行之曝光方法,參照圖4來說明。 Next, the operation of the exposure apparatus configured in this manner and the exposure method by using the exposure apparatus will be described with reference to FIG. 4.
首先,從供給捲筒2拉出表面塗佈有感光材之薄膜1來水平地跨掛於一對導柱11之後,將前端部固定於捲取捲筒3之軸。 First, the film 1 coated with the photosensitive material on the surface of the supply reel 2 is horizontally hung around the pair of guide posts 11, and the front end portion is fixed to the shaft of the take-up reel 3.
於此狀態下,於步驟S1,係藉由馬達驅動控制部25來驅動捲取馬達10而將薄膜1朝X方向以一定速度作捲取。 In this state, in step S1, the winding drive motor 10 is driven by the motor drive control unit 25 to wind up the film 1 at a constant speed in the X direction.
其次,於步驟S2,驅動光源驅動部26讓雷射光源4亮燈一定時間,對光罩5照射曝光用雷射光L。此曝光用雷射光L係通過光罩5之罩體圖案開口而照射於薄膜1上,於薄膜1上曝光出對應於上述罩體圖案之圖案。同時,上述曝光用雷射光L之一部份在通過光罩5之開口窗15之後,藉由聚光透鏡16聚光於薄膜1上,對薄膜1上賦予一定形狀之傷痕而形成對準標記17。 Next, in step S2, the driving light source driving unit 26 lights the laser light source 4 for a predetermined period of time, and irradiates the mask 5 with the exposure laser light L. The exposure laser light L is irradiated onto the film 1 through the cover pattern opening of the mask 5, and the pattern corresponding to the cover pattern is exposed on the film 1. At the same time, a part of the above-mentioned exposure laser light L is condensed on the film 1 by the condensing lens 16 after passing through the opening window 15 of the reticle 5, and a certain shape of the film 1 is given a flaw on the film 1 to form an alignment mark. 17.
於步驟S3,一旦薄膜1移動距離D使得形成於薄膜1上之上述對準標記17到達光罩5之對準用窗18正下方,則通過該對準用窗18利用攝像機構20來攝像上述對準標記17。此攝像圖像係於圖像處理部22受到圖像處理,而檢測對準標記17之中心位置。然後,於運算部23,係運算對準標記17之中心相對於對準用窗18之中心(基準位置)在Y方向上之位偏量。 In step S3, once the film 1 is moved by a distance D such that the alignment mark 17 formed on the film 1 reaches directly below the alignment window 18 of the mask 5, the alignment is performed by the imaging mechanism 20 through the alignment window 18. Mark 17. This captured image is subjected to image processing by the image processing unit 22, and the center position of the alignment mark 17 is detected. Then, in the calculation unit 23, the positional deviation amount of the center of the alignment mark 17 with respect to the center (reference position) of the alignment window 18 in the Y direction is calculated.
於步驟S4,藉由罩體平台驅動控制部27來驅動罩 體平台驅動機構21以控制罩體平台19之移動方向以及移動量,以上述位偏量成為大致零的方式將光罩5朝Y方向移動。 In step S4, the cover is driven by the cover platform driving control unit 27. The body platform driving mechanism 21 moves the mask 5 in the Y direction so that the displacement amount becomes substantially zero by controlling the moving direction and the amount of movement of the cover platform 19.
於步驟S5,係判定對於薄膜1之全部曝光是否已結束。此處,判定為“NO”之情況,係回到步驟S2實行下一次之曝光,同時形成對準標記17。另外,於步驟S5直到判定為“YES”為止係實行步驟S2~S5。藉此,如圖5所示般,於薄膜1上,圖案30在X方向上連續地連接著受到曝光。 In step S5, it is determined whether or not the entire exposure to the film 1 has ended. Here, when it is judged as "NO", the process returns to step S2 to perform the next exposure, and the alignment mark 17 is formed. Further, in steps S5, steps S2 to S5 are executed until the determination is "YES". Thereby, as shown in FIG. 5, on the film 1, the pattern 30 is continuously connected and exposed in the X direction.
此外,於上述第1實施形態,係針對一邊連續地移動薄膜1一邊進行曝光之情況作了說明,惟亦可每當薄膜1移動距離D則使得薄膜1一端停止,在此停止狀態下進行位偏校正以及曝光而實施所謂的步驟曝光。藉此,圖案30在薄膜1之移動方向上能以更高精度相連接。 Further, in the first embodiment described above, the case where the film 1 is continuously moved while being exposed is described. However, the film 1 may be stopped at one end every time the film 1 is moved by the distance D, and the bit is stopped in this stop state. The so-called step exposure is performed by offset correction and exposure. Thereby, the pattern 30 can be connected with higher precision in the moving direction of the film 1.
此外,於上述第1實施形態,係針對開口窗15、聚光透鏡16以及對準用窗18設置於光罩5兩端部之情況作了說明,惟亦可僅設置於其中之一端部側。此外,開口窗15以及聚光透鏡16只要在罩體圖案區域13之Y方向的外側部分即可,亦可設置於平行於Y方向之罩體圖案區域13之中心線上以外之任何位置。 Further, in the above-described first embodiment, the case where the opening window 15, the condensing lens 16, and the alignment window 18 are provided at both end portions of the reticle 5 has been described, but only one of the end portions may be provided. Further, the opening window 15 and the condensing lens 16 may be provided at an outer portion in the Y direction of the cover pattern region 13, or may be provided at any position other than the center line of the cover pattern region 13 parallel to the Y direction.
再者,於上述第1實施形態,係針對以1片光罩5進行曝光之情況作了說明,惟亦可於X方向先後配置複數片光罩5,將前方側之光罩5所為曝光圖案間以後續 之光罩5來補足而進行曝光。 Further, in the first embodiment described above, the case where the exposure is performed by one mask 5 is described. However, a plurality of masks 5 may be arranged in the X direction, and the mask 5 on the front side may be an exposure pattern. Follow-up The mask 5 is used to make up the exposure.
此外,於上述第1實施形態,係針對光罩5朝Y方向移動而進行曝光之位偏校正的情況作了說明,惟亦可使得薄膜1側朝Y方向移動,亦可使得兩者移動。 Further, in the above-described first embodiment, the case where the exposure of the mask 5 is moved in the Y direction and the positional deviation of the exposure is performed is described. However, the film 1 side may be moved in the Y direction or both may be moved.
其次,針對本發明之曝光裝置之第2實施形態作說明。此處係針對有別於第1實施形態之部分來說明。 Next, a second embodiment of the exposure apparatus of the present invention will be described. Here, the description will be made with respect to parts different from the first embodiment.
於此第2實施形態,光罩5在Y方向上複數之單位罩體從X方向觀看時係鄰接端部重疊地互異以一定間隔配置排列者,而進一步具備有單位罩體對準機構,用以檢測於上述各單位罩體之鄰接端部所形成之罩體間對準標記而以各單位罩體之配置排列間距成為一定值之方式進行各單位罩體之位置調整。 In the second embodiment, when the unit cover of the photomask 5 in the Y direction is arranged in the X direction, the adjacent end portions are arranged to overlap each other at a predetermined interval, and the unit cover alignment mechanism is further provided. The position adjustment of each unit cover is performed so that the inter-blade alignment marks formed by the adjacent end portions of the respective unit covers are detected so that the arrangement pitch of each unit cover is constant.
具體而言,上述光罩5,如圖6所示般,於最側端部之單位罩體31s的靠近外側端部係設有上述開口窗15、聚光透鏡16以及對準用窗18,於靠近中央端部係形成有罩體間對準標記32(同圖中以△表示),配置排列於第2個以後之第偶數個之各單位罩體31e在同圖中,於上側端部係將對應於上述罩體間對準標記32而形成有罩體間對準用窗33之窗用構件34定位接合於事先決定之位置,於下側端部係與上述同樣形成有罩體間對準標記32;配置排列於第3個以後第奇數個之各單位罩體310在同圖中,於上側端部係將對應於於上述第偶數個單位罩體31e所形成之罩體間對準標記32而形成有罩體間對準用窗33之窗用構件34定位接合於事先 決定之位置,於下側端部係與上述同樣形成罩體間對準標記32,以對應之罩體間對準標記32與罩體間對準用窗33上下重疊之方式配置排列各單位罩體31s、31e、31o。於此種情況下,係對應於各單位罩體31s、31e、31o而設置複數之雷射光源4。 Specifically, as shown in FIG. 6, the mask 5 is provided with the opening window 15, the collecting lens 16, and the alignment window 18 at the outer end portion of the unit cover 31s at the most end portion. An inter-cover alignment mark 32 (shown by Δ in the same figure) is formed near the center end portion, and the even-numbered unit cover bodies 31e arranged in the second and subsequent rows are arranged in the same figure at the upper end portion. The window member 34 having the inter-cover alignment window 33 corresponding to the inter-cover alignment mark 32 is positioned and joined to a predetermined position, and the lower end portion is formed to be aligned with the cover as described above. Indicia 32; arranged in the third and subsequent odd-numbered unit covers 310 in the same figure, at the upper end portion corresponding to the even-numbered unit cover 31e formed between the cover alignment marks 32, the window member 34 formed with the inter-cover alignment window 33 is positioned and joined to the prior At the position of the lower end, the inter-cover alignment mark 32 is formed in the same manner as described above, and the unit cover is arranged such that the inter-cover alignment mark 32 and the inter-cover alignment window 33 are vertically overlapped. 31s, 31e, 31o. In this case, a plurality of laser light sources 4 are provided corresponding to the respective unit covers 31s, 31e, and 31o.
此外,各單位罩體31s、31e、31o係分別藉由個別之單位罩體平台(圖示省略)而被保持成可移動於Y方向。再者,於上述各窗用構件34上方係分別設有用以攝像罩體間對準標記32之攝像機。此外,藉由上述單位罩體平台與攝像機來構成單位罩體對準機構。 Further, each unit cover 31s, 31e, and 31o is held in the Y direction by an individual unit cover platform (not shown). Further, a camera for capturing the alignment mark 32 between the cover members is provided above each of the window members 34. Further, the unit cover alignment mechanism is constituted by the unit cover platform and the camera.
藉由此種構成,於上述第2實施形態,係與第1實施形態同樣地,可使得曝光用雷射光L通過於最側端部之單位罩體31s所形成之開口窗15以及聚光透鏡16而聚光於薄膜1上,於薄膜1上形成對準標記17,通過對準用窗18檢測出對準標記17在Y方向之位偏量後,將最側端部之單位罩體31s朝Y方向移動來校正上述位偏量。此時,利用上述攝像機進行攝像,以罩體間對準標記32之中心可和各罩體間對準用窗33之中心成為一致之方式將第2個以後之各單位罩體31e、31o朝Y方向移動,將各單位罩體31s、31e、31o之配置排列間距維持在一定值。 According to the second embodiment, in the second embodiment, the exposure laser light L can pass through the opening window 15 formed by the unit cover 31s at the most end portion and the collecting lens. 16 is condensed on the film 1, and an alignment mark 17 is formed on the film 1. After the alignment mark 18 detects the positional deviation of the alignment mark 17 in the Y direction, the unit cover 31s of the most end portion is turned toward The Y direction is moved to correct the above-described bit offset. At this time, the camera is imaged by the camera, and the second and subsequent unit covers 31e and 31o are turned toward the Y so that the center of the alignment mark 32 between the covers can be aligned with the center of the alignment window 33 between the respective covers. The direction is moved, and the arrangement pitch of each unit cover 31s, 31e, and 31o is maintained at a constant value.
如前述般依據第2實施形態,藉由在Y方向上複數配置排列大小小的單位罩體31s、31e、31o,即便對寬廣之無圖案薄膜1亦可以高位置精度來曝光圖案。 As described above, according to the second embodiment, by arranging the unit covers 31s, 31e, and 31o having a small arrangement size in the Y direction, the pattern can be exposed with high positional accuracy even for the wide unpatterned film 1.
此外,如圖6所示般,只要將2個罩體間對準標記32以及罩體間對準用窗33在Y方向並列設置,即可從2個罩體間對準標記32在X方向之位偏量的差來測量單位罩體31s、31e、31o相對於X方向之傾斜角θ,亦可進行單位罩體31s、31e、31o之傾斜校正。藉此,可進一步提升曝光圖案之位置精度。於此種情況下,於單位罩體31s之單位罩體平台亦可不具備傾斜校正之機能。 Further, as shown in FIG. 6, as long as the two inter-cover alignment marks 32 and the inter-cover alignment window 33 are arranged side by side in the Y direction, the alignment marks 32 between the two covers can be aligned in the X direction. The inclination angle θ of the unit covers 31s, 31e, and 31o with respect to the X direction is measured by the difference in the amount of the displacement, and the inclination correction of the unit covers 31s, 31e, and 31o can be performed. Thereby, the positional accuracy of the exposure pattern can be further improved. In this case, the unit cover platform of the unit cover 31s may not have the function of tilt correction.
再者,只要事先增加各單位罩體31之鄰接端部的重疊量,而可測量罩體間對準標記32朝Y方向之移動量,即可以位於配置排列中央之單位罩體31為中心而將各單位罩體31朝Y方向分別移動一定量來增加曝光區域之寬度。 Further, as long as the amount of overlap of the adjacent end portions of the respective unit covers 31 is increased in advance, the amount of movement of the inter-cover alignment marks 32 in the Y direction can be measured, that is, the unit cover 31 at the center of the arrangement can be centered. Each unit cover 31 is moved by a certain amount in the Y direction to increase the width of the exposure area.
此外,於上述第1以及第2實施形態中,係針對將曝光用雷射光源4所放射之雷射光L聚光於薄膜1上而形成對準標記17之情況作了說明,惟本發明不限定於此,亦可另外設置對準標記專用之雷射光源。此種情況,無需於光罩5之開口窗15設置聚光透鏡16,且作為曝光用光源不限於雷射光源亦可為水銀燈、氙燈等。此外,曝光用雷射光源4與對準標記專用之雷射光源所放射之雷射光波長亦可不同。 In addition, in the above-described first and second embodiments, the case where the laser light L emitted from the exposure laser light source 4 is condensed on the film 1 to form the alignment mark 17 has been described, but the present invention does not. In addition to this, a laser light source dedicated to the alignment mark may be additionally provided. In this case, it is not necessary to provide the collecting lens 16 in the opening window 15 of the mask 5, and the light source for exposure is not limited to the laser light source, and may be a mercury lamp, a xenon lamp or the like. Further, the wavelength of the laser light emitted by the laser light source 4 for exposure and the laser light source dedicated to the alignment mark may be different.
再者,於上述第1以及第2實施形態,係針對於光罩5設置對準用窗18、且於單位罩體31s、31e、31o設置罩體間對準用窗33之情況作了說明,惟本發明不限 於此,亦可取代對準用窗而設置對準標記。 In addition, in the above-described first and second embodiments, the case where the alignment window 18 is provided in the mask 5 and the inter-blade alignment window 33 is provided in the unit covers 31s, 31e, and 31o is described. The invention is not limited Here, an alignment mark may be provided instead of the alignment window.
此外,於上述第1以及第2實施形態,係針對將開口窗15、聚光透鏡16以及對準用窗16設置於光罩5之情況作了說明,惟本發明不限於此,亦可如圖7所示般設置於用以定位、保持光罩5之罩體平台19側。於此種情況下,開口窗15可如同圖(a)所示般設置於曝光用雷射光L之照射區域14內、或是如同圖(b)所示般設置於照射區域14外。當開口窗15設置於曝光用雷射光L之照射區域14內之時,可於開口窗15設置聚光透鏡16而以曝光用雷射光源4兼用為形成對準標記17(參照同圖(a))。此外,當開口窗15設置於曝光用雷射光L之照射區域14外之時,只要具備對準標記17形成用之專用雷射光源即可。於此種情況下,亦可不具聚光透鏡16(參照同圖(b))。 Further, in the above-described first and second embodiments, the case where the opening window 15, the condensing lens 16, and the alignment window 16 are provided in the reticle 5 has been described, but the present invention is not limited thereto, and may be as shown in the drawing. 7 is disposed on the side of the cover platform 19 for positioning and holding the mask 5. In this case, the opening window 15 may be provided in the irradiation region 14 of the exposure laser light L as shown in Fig. (a) or outside the irradiation region 14 as shown in Fig. (b). When the opening window 15 is provided in the irradiation region 14 of the exposure laser light L, the condensing lens 16 can be provided in the opening window 15 and the exposure laser light source 4 can also be used to form the alignment mark 17 (refer to the same figure (a). )). Further, when the opening window 15 is provided outside the irradiation region 14 of the exposure laser light L, it is sufficient to provide a dedicated laser light source for forming the alignment mark 17. In this case, the condensing lens 16 may not be provided (refer to the same figure (b)).
使用圖7所示罩體平台19之曝光,如圖8所示般,於薄膜1上通過光罩5之罩體圖案來曝光圖案30,另一方面,對Y方向之圖案形成區域外,通過罩體平台19之開口窗15照射雷射光,於薄膜1之面上賦予一定形狀之傷痕來形成對準標記17,檢測對準標記17相對於在X方向下游位置所事先決定之基準位置(例如對準用窗18之中心位置)在Y方向之位偏,為了校正此位偏而使得罩體平台19與光罩5一體地朝Y方向移動,接續於前一個已曝光之圖案30來曝光下一個圖案30。藉由反覆實行,能以高位置精度來接續地曝光圖案30。 Using the exposure of the cover platform 19 shown in FIG. 7, as shown in FIG. 8, the pattern 30 is exposed on the film 1 through the cover pattern of the mask 5, and on the other hand, the pattern formation region in the Y direction is passed. The opening window 15 of the cover platform 19 illuminates the laser light, imparts a flaw on the surface of the film 1 to form an alignment mark 17, and detects a reference position previously determined by the alignment mark 17 with respect to a position downstream in the X direction (for example) Positioning in the Y direction of the alignment window 18, in order to correct this position, the cover platform 19 and the mask 5 are integrally moved in the Y direction, and the previous exposed pattern 30 is attached to expose the next one. Pattern 30. By repeating the execution, the pattern 30 can be successively exposed with high positional accuracy.
此外,於以上說明中,係針對基板為薄膜1之情況作了說明,惟本發明不限於此,基板亦可為板狀構件、印刷基板等。 Further, in the above description, the case where the substrate is the film 1 has been described, but the present invention is not limited thereto, and the substrate may be a plate member, a printed substrate, or the like.
1‧‧‧薄膜 1‧‧‧film
2‧‧‧供給捲筒 2‧‧‧Supply reel
3‧‧‧捲取捲筒 3‧‧‧Winding reel
4‧‧‧雷射光源 4‧‧‧Laser light source
5‧‧‧光罩 5‧‧‧Photomask
6‧‧‧對準機構 6‧‧‧Alignment mechanism
7‧‧‧控制機構 7‧‧‧Control agency
8‧‧‧供給側旋轉軸 8‧‧‧Supply side rotation axis
9‧‧‧捲取側旋轉軸 9‧‧‧Winding side rotation axis
10‧‧‧捲取馬達 10‧‧‧Winding motor
11‧‧‧導柱 11‧‧‧ Guide column
12‧‧‧耦合光學構件 12‧‧‧Coupling optical components
13‧‧‧罩體圖案區域 13‧‧‧ Cover pattern area
14‧‧‧照射區域 14‧‧‧ illuminated area
15‧‧‧開口窗 15‧‧‧Open window
16‧‧‧聚光透鏡 16‧‧‧ Concentrating lens
17‧‧‧對準標記 17‧‧‧ alignment mark
18‧‧‧對準用窗 18‧‧‧Alignment window
19‧‧‧罩體平台 19‧‧‧ Cover platform
20‧‧‧攝像機構 20‧‧‧ camera organization
21‧‧‧罩體平台驅動機構 21‧‧‧ Cover platform drive mechanism
22‧‧‧圖像處理部 22‧‧‧Image Processing Department
23‧‧‧運算部 23‧‧‧ Computing Department
24‧‧‧記憶體 24‧‧‧ memory
25‧‧‧馬達驅動控制部 25‧‧‧Motor Drive Control Department
26‧‧‧光源驅動部 26‧‧‧Light source drive department
27‧‧‧罩體平台驅動控制部 27‧‧‧ Cover Platform Drive Control Department
28‧‧‧控制部 28‧‧‧Control Department
29‧‧‧平面反射鏡 29‧‧‧Flat mirror
30‧‧‧圖案 30‧‧‧ pattern
31e,31o,31s‧‧‧單位罩體 31e, 31o, 31s‧‧‧ unit cover
32‧‧‧罩體間對準標記 32‧‧‧ Between the cover alignment marks
33‧‧‧罩體間對準用窗 33‧‧‧ Alignment window between the covers
34‧‧‧窗用構件 34‧‧‧Window components
圖1係顯示本發明之曝光裝置之第1實施形態之前視圖。 Fig. 1 is a front view showing a first embodiment of an exposure apparatus of the present invention.
圖2係顯示上述第1實施形態所使用之光罩之俯視圖。 Fig. 2 is a plan view showing a photomask used in the first embodiment.
圖3係顯示控制機構之概略構成之方塊圖。 Fig. 3 is a block diagram showing a schematic configuration of a control mechanism.
圖4係用以說明本發明之曝光方法之流程圖。 Figure 4 is a flow chart for explaining the exposure method of the present invention.
圖5係顯示本發明之曝光方法所進行曝光之說明圖。 Fig. 5 is an explanatory view showing exposure performed by the exposure method of the present invention.
圖6係顯示本發明之曝光裝置之第2實施形態之圖,係顯示光罩之一構成例的俯視圖。 Fig. 6 is a plan view showing a second embodiment of the exposure apparatus of the present invention, showing a configuration example of the reticle.
圖7係顯示將開口窗以及對準用窗設置於罩體平台之例之俯視圖,(a)係於曝光用光之照射區域內設置上述開口窗之例,(b)係於曝光用光之照射區域外設置上述開口窗之例。 Fig. 7 is a plan view showing an example in which an opening window and an alignment window are provided on a cover platform, (a) an example in which the opening window is provided in an irradiation area of exposure light, and (b) an exposure light in exposure light. An example of the above-mentioned opening window is provided outside the area.
圖8係顯示使用圖7之罩體平台進行曝光之說明圖。 Fig. 8 is an explanatory view showing exposure using the cover platform of Fig. 7.
1‧‧‧薄膜 1‧‧‧film
2‧‧‧供給捲筒 2‧‧‧Supply reel
3‧‧‧捲取捲筒 3‧‧‧Winding reel
4‧‧‧雷射光源 4‧‧‧Laser light source
5‧‧‧光罩 5‧‧‧Photomask
6‧‧‧對準機構 6‧‧‧Alignment mechanism
7‧‧‧控制機構 7‧‧‧Control agency
8‧‧‧供給側旋轉軸 8‧‧‧Supply side rotation axis
9‧‧‧捲取側旋轉軸 9‧‧‧Winding side rotation axis
10‧‧‧捲取馬達 10‧‧‧Winding motor
11‧‧‧導柱 11‧‧‧ Guide column
12‧‧‧耦合光學構件 12‧‧‧Coupling optical components
19‧‧‧罩體平台 19‧‧‧ Cover platform
20‧‧‧攝像機構 20‧‧‧ camera organization
21‧‧‧罩體平台驅動機構 21‧‧‧ Cover platform drive mechanism
29‧‧‧平面反射鏡 29‧‧‧Flat mirror
Claims (5)
Applications Claiming Priority (1)
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JP2010089608A JP5382456B2 (en) | 2010-04-08 | 2010-04-08 | Exposure method and exposure apparatus |
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TW201208032A TW201208032A (en) | 2012-02-16 |
TWI538148B true TWI538148B (en) | 2016-06-11 |
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TW100108446A TWI538148B (en) | 2010-04-08 | 2011-03-14 | Exposure method and exposure apparatus |
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JP (1) | JP5382456B2 (en) |
KR (1) | KR101787137B1 (en) |
CN (1) | CN102834780B (en) |
TW (1) | TWI538148B (en) |
WO (1) | WO2011125401A1 (en) |
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KR102253995B1 (en) * | 2013-03-12 | 2021-05-18 | 마이크로닉 아베 | Mechanically produced alignment fiducial method and alignment system |
CN106583934A (en) * | 2014-06-10 | 2017-04-26 | 赵牧青 | Economical laser marking system |
JP6528775B2 (en) * | 2014-09-04 | 2019-06-12 | 株式会社ニコン | Processing system and device manufacturing method |
TWI571710B (en) * | 2014-12-30 | 2017-02-21 | 力晶科技股份有限公司 | Method and system for monitoring module actuation of alignment light source device in exposure apparatus |
JP6296174B2 (en) * | 2015-01-15 | 2018-03-20 | 株式会社村田製作所 | Exposure equipment |
JP6554330B2 (en) * | 2015-06-01 | 2019-07-31 | 株式会社オーク製作所 | Maskless exposure apparatus and exposure method |
JP6977098B2 (en) * | 2020-04-07 | 2021-12-08 | キヤノン株式会社 | Exposure device, pattern forming device and exposure method |
CN116507035B (en) * | 2023-06-28 | 2023-10-13 | 苏州维信电子有限公司 | Thin coil circuit board and manufacturing method thereof |
Family Cites Families (11)
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JPH04288816A (en) * | 1991-03-18 | 1992-10-13 | Canon Inc | Forming method for alignment marker |
JP2001060008A (en) * | 1999-08-23 | 2001-03-06 | Sumitomo Metal Mining Co Ltd | Exposure method and production of electronic parts using the same |
JP4309874B2 (en) * | 2005-08-05 | 2009-08-05 | 株式会社ブイ・テクノロジー | Exposure equipment |
JP4754924B2 (en) | 2005-10-07 | 2011-08-24 | 株式会社ブイ・テクノロジー | Exposure equipment |
JP5382899B2 (en) * | 2005-10-25 | 2014-01-08 | 株式会社ブイ・テクノロジー | Exposure equipment |
JP2008233638A (en) * | 2007-03-22 | 2008-10-02 | Dainippon Screen Mfg Co Ltd | Drawing device and method |
JP2009003159A (en) * | 2007-06-21 | 2009-01-08 | Toppan Printing Co Ltd | Laser exposure method and laser exposure apparatus |
JP5144992B2 (en) * | 2007-08-27 | 2013-02-13 | 株式会社オーク製作所 | Exposure equipment |
JP5235061B2 (en) * | 2007-08-30 | 2013-07-10 | 株式会社ブイ・テクノロジー | Exposure equipment |
JP5180624B2 (en) * | 2008-03-10 | 2013-04-10 | 東レエンジニアリング株式会社 | Method and apparatus for exposing strip-shaped workpiece |
JP2009265313A (en) * | 2008-04-24 | 2009-11-12 | Nsk Ltd | Scanning exposure device and scanning exposure method |
-
2010
- 2010-04-08 JP JP2010089608A patent/JP5382456B2/en not_active Expired - Fee Related
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2011
- 2011-03-03 KR KR1020127029241A patent/KR101787137B1/en active IP Right Grant
- 2011-03-03 WO PCT/JP2011/054931 patent/WO2011125401A1/en active Application Filing
- 2011-03-03 CN CN201180017800.9A patent/CN102834780B/en not_active Expired - Fee Related
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Also Published As
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KR101787137B1 (en) | 2017-10-18 |
JP2011221241A (en) | 2011-11-04 |
CN102834780B (en) | 2016-08-03 |
CN102834780A (en) | 2012-12-19 |
WO2011125401A1 (en) | 2011-10-13 |
KR20130102457A (en) | 2013-09-17 |
TW201208032A (en) | 2012-02-16 |
JP5382456B2 (en) | 2014-01-08 |
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