TWI533350B - 光學微影系統、感測器、轉換元件以及製造之方法 - Google Patents
光學微影系統、感測器、轉換元件以及製造之方法 Download PDFInfo
- Publication number
- TWI533350B TWI533350B TW100109513A TW100109513A TWI533350B TW I533350 B TWI533350 B TW I533350B TW 100109513 A TW100109513 A TW 100109513A TW 100109513 A TW100109513 A TW 100109513A TW I533350 B TWI533350 B TW I533350B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- conversion element
- charged particle
- beamlets
- blocking
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000001459 lithography Methods 0.000 title 1
- 239000002245 particle Substances 0.000 claims description 68
- 238000006243 chemical reaction Methods 0.000 claims description 65
- 230000000903 blocking effect Effects 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 43
- 230000004888 barrier function Effects 0.000 claims description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000206 photolithography Methods 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 17
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 16
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 239000011651 chromium Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 230000004044 response Effects 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 87
- 238000010894 electron beam technology Methods 0.000 description 13
- 238000005259 measurement Methods 0.000 description 11
- 238000005253 cladding Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2443—Scintillation detectors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Measurement Of Radiation (AREA)
- Electron Sources, Ion Sources (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL1037820A NL1037820C2 (en) | 2010-03-22 | 2010-03-22 | Lithography system, sensor, sensor surface element and method of manufacture. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201301332A TW201301332A (zh) | 2013-01-01 |
| TWI533350B true TWI533350B (zh) | 2016-05-11 |
Family
ID=43034143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100109513A TWI533350B (zh) | 2010-03-22 | 2011-03-21 | 光學微影系統、感測器、轉換元件以及製造之方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US8357906B2 (enExample) |
| EP (1) | EP2550671B1 (enExample) |
| JP (1) | JP5738973B2 (enExample) |
| KR (1) | KR101667770B1 (enExample) |
| CN (1) | CN102906850B (enExample) |
| NL (1) | NL1037820C2 (enExample) |
| RU (1) | RU2562126C2 (enExample) |
| TW (1) | TWI533350B (enExample) |
| WO (1) | WO2011117253A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1037820C2 (en) | 2010-03-22 | 2011-09-23 | Mapper Lithography Ip Bv | Lithography system, sensor, sensor surface element and method of manufacture. |
| US9030675B2 (en) | 2010-11-13 | 2015-05-12 | Mapper Lithography Ip B.V. | Method for determining a distance between two beamlets in a multi-beamlet exposure apparatus |
| NL2008174C2 (en) * | 2012-01-24 | 2013-08-21 | Mapper Lithography Ip Bv | Device for spot size measurement at wafer level using a knife edge and a method for manufacturing such a device. |
| TWI584334B (zh) | 2012-03-08 | 2017-05-21 | 瑪波微影Ｉｐ公司 | 具有準直感測器和射束測量感測器的帶電粒子微影系統 |
| NL2010795C2 (en) * | 2012-05-14 | 2013-12-31 | Mapper Lithography Ip Bv | Method for determining a beamlet position and method for determining a distance between two beamlets in a multi-beamlet exposure apparatus. |
| KR102126061B1 (ko) | 2013-11-28 | 2020-06-23 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
| CN108028161B (zh) * | 2015-07-31 | 2020-07-03 | Fei公司 | 用于带电粒子束装置的分段式检测器 |
| US10522472B2 (en) | 2016-09-08 | 2019-12-31 | Asml Netherlands B.V. | Secure chips with serial numbers |
| NL2019503B1 (en) | 2016-09-08 | 2018-08-31 | Mapper Lithography Ip Bv | Fabricating unique chips using a charged particle multi-beamlet lithography system |
| US10418324B2 (en) | 2016-10-27 | 2019-09-17 | Asml Netherlands B.V. | Fabricating unique chips using a charged particle multi-beamlet lithography system |
| KR102359084B1 (ko) | 2016-12-23 | 2022-02-07 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자 멀티-빔렛 리소그래피 시스템을 이용한 고유 칩 제조 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0049799B1 (en) * | 1980-10-09 | 1986-02-12 | Dai Nippon Insatsu Kabushiki Kaisha | Photomask blank and photomask |
| JPS62260335A (ja) * | 1986-05-06 | 1987-11-12 | Hitachi Ltd | パタ−ン検査方法および装置 |
| US4902898A (en) * | 1988-04-26 | 1990-02-20 | Microelectronics Center Of North Carolina | Wand optics column and associated array wand and charged particle source |
| US5136169A (en) | 1991-04-05 | 1992-08-04 | Massachusetts Institute Of Technology | Energy beam locating |
| JP2701764B2 (ja) * | 1994-12-28 | 1998-01-21 | 日本電気株式会社 | 荷電粒子ビームの寸法測定装置および測定方法 |
| US5872618A (en) | 1996-02-28 | 1999-02-16 | Nikon Corporation | Projection exposure apparatus |
| JPH09306400A (ja) * | 1996-05-15 | 1997-11-28 | Nippon Telegr & Teleph Corp <Ntt> | 電子ビ―ム計測用ナイフエッジ及びその製法並びに電子ビ―ム計測用ナイフエッジを用いた電子ビ―ム計測法 |
| US5910827A (en) * | 1997-02-26 | 1999-06-08 | Kwan; Katherine W. | Video signal decoding arrangement and method for improved error concealment |
| US5892230A (en) * | 1997-05-29 | 1999-04-06 | Massachusetts Institute Of Technology | Scintillating fiducial patterns |
| JPH11246300A (ja) | 1997-10-30 | 1999-09-14 | Canon Inc | チタンナノ細線、チタンナノ細線の製造方法、構造体及び電子放出素子 |
| US6429090B1 (en) * | 1999-03-03 | 2002-08-06 | Nikon Corporation | Fiducial mark bodies for charged-particle-beam (CPB) microlithography, methods for making same, and CPB microlithography apparatus comprising same |
| JP4505662B2 (ja) * | 1999-03-03 | 2010-07-21 | 株式会社ニコン | 基準マーク構造体、その製造方法及びそれを用いた荷電粒子線露光装置 |
| JP2000315785A (ja) * | 1999-04-30 | 2000-11-14 | Canon Inc | ナノ構造体の製造方法及びナノ構造体デバイス |
| US6791094B1 (en) * | 1999-06-24 | 2004-09-14 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for determining beam parallelism and direction |
| WO2001048560A1 (en) * | 1999-12-28 | 2001-07-05 | Toshiba Tec Kabushiki Kaisha | Image forming device and fixing device |
| DE10307545A1 (de) * | 2002-02-22 | 2003-11-06 | Hoya Corp | Zuschnitt für halbtonartige Phasenverschiebungsmaske und zugehörige Phasenverschiebungsmaske |
| CN1936703B (zh) * | 2002-06-18 | 2011-12-07 | Hoya株式会社 | 灰调掩模及其制造方法 |
| EP1554634B1 (en) | 2002-10-25 | 2011-12-21 | Mapper Lithography Ip B.V. | Lithography system |
| US6919570B2 (en) * | 2002-12-19 | 2005-07-19 | Advanced Electron Beams, Inc. | Electron beam sensor |
| JP2004251764A (ja) * | 2003-02-20 | 2004-09-09 | Tokyo Seimitsu Co Ltd | 電子ビーム像用ｔｄｉセンサ及びマスク検査装置 |
| JP4738723B2 (ja) * | 2003-08-06 | 2011-08-03 | キヤノン株式会社 | マルチ荷電粒子線描画装置、荷電粒子線の電流の測定方法及びデバイス製造方法 |
| US20050088633A1 (en) | 2003-10-24 | 2005-04-28 | Intel Corporation | Composite optical lithography method for patterning lines of unequal width |
| JP3962778B2 (ja) | 2004-06-02 | 2007-08-22 | 株式会社日立ハイテクノロジーズ | 電子ビーム検出器、並びにそれを用いた電子ビーム描画方法及び電子ビーム描画装置 |
| CN1907190A (zh) | 2005-07-25 | 2007-02-07 | 株式会社泉精器制作所 | 饮料制作器 |
| JP2007042803A (ja) | 2005-08-02 | 2007-02-15 | Honda Motor Co Ltd | イオン注入マスクおよびその製造方法、並びにイオン注入マスクを用いた炭化珪素半導体装置およびその製造方法 |
| TWI524153B (zh) * | 2005-09-15 | 2016-03-01 | 瑪波微影Ｉｐ公司 | 微影系統，感測器及測量方法 |
| WO2007032670A1 (en) * | 2005-09-15 | 2007-03-22 | Mapper Lithography Ip B.V. | Lithography system, sensor and measuring method |
| US7868300B2 (en) * | 2005-09-15 | 2011-01-11 | Mapper Lithography Ip B.V. | Lithography system, sensor and measuring method |
| US7521685B2 (en) | 2006-01-18 | 2009-04-21 | General Electric Company | Structured scintillator and systems employing structured scintillators |
| JP2008041890A (ja) * | 2006-08-04 | 2008-02-21 | Canon Inc | マルチ荷電粒子ビームの計測方法、露光装置、及びデバイス製造方法 |
| JP5301312B2 (ja) * | 2008-03-21 | 2013-09-25 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置の較正用基板及び描画方法 |
| NL1037820C2 (en) | 2010-03-22 | 2011-09-23 | Mapper Lithography Ip Bv | Lithography system, sensor, sensor surface element and method of manufacture. |
-
2010
- 2010-03-22 NL NL1037820A patent/NL1037820C2/en not_active IP Right Cessation
-
2011
- 2011-03-21 TW TW100109513A patent/TWI533350B/zh active
- 2011-03-22 CN CN201180025381.3A patent/CN102906850B/zh active Active
- 2011-03-22 WO PCT/EP2011/054372 patent/WO2011117253A1/en not_active Ceased
- 2011-03-22 EP EP11709423.5A patent/EP2550671B1/en active Active
- 2011-03-22 JP JP2013500473A patent/JP5738973B2/ja active Active
- 2011-03-22 US US13/053,488 patent/US8357906B2/en not_active Ceased
- 2011-03-22 KR KR1020127027493A patent/KR101667770B1/ko active Active
- 2011-03-22 RU RU2012144624/07A patent/RU2562126C2/ru active
-
2015
- 2015-01-22 US US14/602,294 patent/USRE47287E1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2550671A1 (en) | 2013-01-30 |
| USRE47287E1 (en) | 2019-03-12 |
| US8357906B2 (en) | 2013-01-22 |
| RU2012144624A (ru) | 2014-04-27 |
| CN102906850B (zh) | 2015-09-09 |
| US20110253900A1 (en) | 2011-10-20 |
| EP2550671B1 (en) | 2016-03-16 |
| WO2011117253A1 (en) | 2011-09-29 |
| JP5738973B2 (ja) | 2015-06-24 |
| NL1037820C2 (en) | 2011-09-23 |
| KR101667770B1 (ko) | 2016-10-19 |
| RU2562126C2 (ru) | 2015-09-10 |
| KR20130067252A (ko) | 2013-06-21 |
| JP2013522923A (ja) | 2013-06-13 |
| TW201301332A (zh) | 2013-01-01 |
| CN102906850A (zh) | 2013-01-30 |
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