CN102906850B - 光刻系统、传感器、转换元件以及制造方法 - Google Patents

光刻系统、传感器、转换元件以及制造方法 Download PDF

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Publication number
CN102906850B
CN102906850B CN201180025381.3A CN201180025381A CN102906850B CN 102906850 B CN102906850 B CN 102906850B CN 201180025381 A CN201180025381 A CN 201180025381A CN 102906850 B CN102906850 B CN 102906850B
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China
Prior art keywords
charged particle
conversion element
layer
beamlet
barrier structure
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CN201180025381.3A
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English (en)
Chinese (zh)
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CN102906850A (zh
Inventor
R.汉福格
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ASML Netherlands BV
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Mapper Lithopraphy IP BV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2443—Scintillation detectors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Measurement Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)
CN201180025381.3A 2010-03-22 2011-03-22 光刻系统、传感器、转换元件以及制造方法 Active CN102906850B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL1037820 2010-03-22
NL1037820A NL1037820C2 (en) 2010-03-22 2010-03-22 Lithography system, sensor, sensor surface element and method of manufacture.
PCT/EP2011/054372 WO2011117253A1 (en) 2010-03-22 2011-03-22 Lithography system, sensor, converter element and method of manufacture

Publications (2)

Publication Number Publication Date
CN102906850A CN102906850A (zh) 2013-01-30
CN102906850B true CN102906850B (zh) 2015-09-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180025381.3A Active CN102906850B (zh) 2010-03-22 2011-03-22 光刻系统、传感器、转换元件以及制造方法

Country Status (9)

Country Link
US (2) US8357906B2 (enExample)
EP (1) EP2550671B1 (enExample)
JP (1) JP5738973B2 (enExample)
KR (1) KR101667770B1 (enExample)
CN (1) CN102906850B (enExample)
NL (1) NL1037820C2 (enExample)
RU (1) RU2562126C2 (enExample)
TW (1) TWI533350B (enExample)
WO (1) WO2011117253A1 (enExample)

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NL1037820C2 (en) 2010-03-22 2011-09-23 Mapper Lithography Ip Bv Lithography system, sensor, sensor surface element and method of manufacture.
US9030675B2 (en) 2010-11-13 2015-05-12 Mapper Lithography Ip B.V. Method for determining a distance between two beamlets in a multi-beamlet exposure apparatus
NL2008174C2 (en) * 2012-01-24 2013-08-21 Mapper Lithography Ip Bv Device for spot size measurement at wafer level using a knife edge and a method for manufacturing such a device.
TWI584334B (zh) 2012-03-08 2017-05-21 瑪波微影Ｉｐ公司 具有準直感測器和射束測量感測器的帶電粒子微影系統
NL2010795C2 (en) * 2012-05-14 2013-12-31 Mapper Lithography Ip Bv Method for determining a beamlet position and method for determining a distance between two beamlets in a multi-beamlet exposure apparatus.
KR102126061B1 (ko) 2013-11-28 2020-06-23 삼성전자주식회사 이미지 센서 및 그 제조 방법
CN108028161B (zh) * 2015-07-31 2020-07-03 Fei公司 用于带电粒子束装置的分段式检测器
US10522472B2 (en) 2016-09-08 2019-12-31 Asml Netherlands B.V. Secure chips with serial numbers
NL2019503B1 (en) 2016-09-08 2018-08-31 Mapper Lithography Ip Bv Fabricating unique chips using a charged particle multi-beamlet lithography system
US10418324B2 (en) 2016-10-27 2019-09-17 Asml Netherlands B.V. Fabricating unique chips using a charged particle multi-beamlet lithography system
KR102359084B1 (ko) 2016-12-23 2022-02-07 에이에스엠엘 네델란즈 비.브이. 하전 입자 멀티-빔렛 리소그래피 시스템을 이용한 고유 칩 제조

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Also Published As

Publication number Publication date
EP2550671A1 (en) 2013-01-30
USRE47287E1 (en) 2019-03-12
US8357906B2 (en) 2013-01-22
RU2012144624A (ru) 2014-04-27
TWI533350B (zh) 2016-05-11
US20110253900A1 (en) 2011-10-20
EP2550671B1 (en) 2016-03-16
WO2011117253A1 (en) 2011-09-29
JP5738973B2 (ja) 2015-06-24
NL1037820C2 (en) 2011-09-23
KR101667770B1 (ko) 2016-10-19
RU2562126C2 (ru) 2015-09-10
KR20130067252A (ko) 2013-06-21
JP2013522923A (ja) 2013-06-13
TW201301332A (zh) 2013-01-01
CN102906850A (zh) 2013-01-30

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TR01 Transfer of patent right

Effective date of registration: 20190531

Address after: Holland Weide Eindhoven

Patentee after: ASML Holland Co., Ltd.

Address before: About Holland

Patentee before: Mapper Lithography IP B. V.

TR01 Transfer of patent right