RU2562126C2 - Система литографии, датчик, элемент преобразователя и способ изготовления - Google Patents

Система литографии, датчик, элемент преобразователя и способ изготовления Download PDF

Info

Publication number
RU2562126C2
RU2562126C2 RU2012144624/07A RU2012144624A RU2562126C2 RU 2562126 C2 RU2562126 C2 RU 2562126C2 RU 2012144624/07 A RU2012144624/07 A RU 2012144624/07A RU 2012144624 A RU2012144624 A RU 2012144624A RU 2562126 C2 RU2562126 C2 RU 2562126C2
Authority
RU
Russia
Prior art keywords
layer
elementary
charged particles
transducer element
beams
Prior art date
Application number
RU2012144624/07A
Other languages
English (en)
Russian (ru)
Other versions
RU2012144624A (ru
Inventor
Рабах ХАНФАУГ
Original Assignee
МЭППЕР ЛИТОГРАФИ АйПи Б.В.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by МЭППЕР ЛИТОГРАФИ АйПи Б.В. filed Critical МЭППЕР ЛИТОГРАФИ АйПи Б.В.
Publication of RU2012144624A publication Critical patent/RU2012144624A/ru
Application granted granted Critical
Publication of RU2562126C2 publication Critical patent/RU2562126C2/ru

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2443—Scintillation detectors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Measurement Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)
RU2012144624/07A 2010-03-22 2011-03-22 Система литографии, датчик, элемент преобразователя и способ изготовления RU2562126C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL1037820 2010-03-22
NL1037820A NL1037820C2 (en) 2010-03-22 2010-03-22 Lithography system, sensor, sensor surface element and method of manufacture.
PCT/EP2011/054372 WO2011117253A1 (en) 2010-03-22 2011-03-22 Lithography system, sensor, converter element and method of manufacture

Publications (2)

Publication Number Publication Date
RU2012144624A RU2012144624A (ru) 2014-04-27
RU2562126C2 true RU2562126C2 (ru) 2015-09-10

Family

ID=43034143

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2012144624/07A RU2562126C2 (ru) 2010-03-22 2011-03-22 Система литографии, датчик, элемент преобразователя и способ изготовления

Country Status (9)

Country Link
US (2) US8357906B2 (enExample)
EP (1) EP2550671B1 (enExample)
JP (1) JP5738973B2 (enExample)
KR (1) KR101667770B1 (enExample)
CN (1) CN102906850B (enExample)
NL (1) NL1037820C2 (enExample)
RU (1) RU2562126C2 (enExample)
TW (1) TWI533350B (enExample)
WO (1) WO2011117253A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1037820C2 (en) 2010-03-22 2011-09-23 Mapper Lithography Ip Bv Lithography system, sensor, sensor surface element and method of manufacture.
US9030675B2 (en) 2010-11-13 2015-05-12 Mapper Lithography Ip B.V. Method for determining a distance between two beamlets in a multi-beamlet exposure apparatus
NL2008174C2 (en) * 2012-01-24 2013-08-21 Mapper Lithography Ip Bv Device for spot size measurement at wafer level using a knife edge and a method for manufacturing such a device.
TWI584334B (zh) 2012-03-08 2017-05-21 瑪波微影Ｉｐ公司 具有準直感測器和射束測量感測器的帶電粒子微影系統
NL2010795C2 (en) * 2012-05-14 2013-12-31 Mapper Lithography Ip Bv Method for determining a beamlet position and method for determining a distance between two beamlets in a multi-beamlet exposure apparatus.
KR102126061B1 (ko) 2013-11-28 2020-06-23 삼성전자주식회사 이미지 센서 및 그 제조 방법
CN108028161B (zh) * 2015-07-31 2020-07-03 Fei公司 用于带电粒子束装置的分段式检测器
US10522472B2 (en) 2016-09-08 2019-12-31 Asml Netherlands B.V. Secure chips with serial numbers
NL2019503B1 (en) 2016-09-08 2018-08-31 Mapper Lithography Ip Bv Fabricating unique chips using a charged particle multi-beamlet lithography system
US10418324B2 (en) 2016-10-27 2019-09-17 Asml Netherlands B.V. Fabricating unique chips using a charged particle multi-beamlet lithography system
KR102359084B1 (ko) 2016-12-23 2022-02-07 에이에스엠엘 네델란즈 비.브이. 하전 입자 멀티-빔렛 리소그래피 시스템을 이용한 고유 칩 제조

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5892230A (en) * 1997-05-29 1999-04-06 Massachusetts Institute Of Technology Scintillating fiducial patterns
US6791094B1 (en) * 1999-06-24 2004-09-14 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for determining beam parallelism and direction

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0049799B1 (en) * 1980-10-09 1986-02-12 Dai Nippon Insatsu Kabushiki Kaisha Photomask blank and photomask
JPS62260335A (ja) * 1986-05-06 1987-11-12 Hitachi Ltd パタ−ン検査方法および装置
US4902898A (en) * 1988-04-26 1990-02-20 Microelectronics Center Of North Carolina Wand optics column and associated array wand and charged particle source
US5136169A (en) 1991-04-05 1992-08-04 Massachusetts Institute Of Technology Energy beam locating
JP2701764B2 (ja) * 1994-12-28 1998-01-21 日本電気株式会社 荷電粒子ビームの寸法測定装置および測定方法
US5872618A (en) 1996-02-28 1999-02-16 Nikon Corporation Projection exposure apparatus
JPH09306400A (ja) * 1996-05-15 1997-11-28 Nippon Telegr & Teleph Corp <Ntt> 電子ビ―ム計測用ナイフエッジ及びその製法並びに電子ビ―ム計測用ナイフエッジを用いた電子ビ―ム計測法
US5910827A (en) * 1997-02-26 1999-06-08 Kwan; Katherine W. Video signal decoding arrangement and method for improved error concealment
JPH11246300A (ja) 1997-10-30 1999-09-14 Canon Inc チタンナノ細線、チタンナノ細線の製造方法、構造体及び電子放出素子
US6429090B1 (en) * 1999-03-03 2002-08-06 Nikon Corporation Fiducial mark bodies for charged-particle-beam (CPB) microlithography, methods for making same, and CPB microlithography apparatus comprising same
JP4505662B2 (ja) * 1999-03-03 2010-07-21 株式会社ニコン 基準マーク構造体、その製造方法及びそれを用いた荷電粒子線露光装置
JP2000315785A (ja) * 1999-04-30 2000-11-14 Canon Inc ナノ構造体の製造方法及びナノ構造体デバイス
WO2001048560A1 (en) * 1999-12-28 2001-07-05 Toshiba Tec Kabushiki Kaisha Image forming device and fixing device
DE10307545A1 (de) * 2002-02-22 2003-11-06 Hoya Corp Zuschnitt für halbtonartige Phasenverschiebungsmaske und zugehörige Phasenverschiebungsmaske
CN1936703B (zh) * 2002-06-18 2011-12-07 Hoya株式会社 灰调掩模及其制造方法
EP1554634B1 (en) 2002-10-25 2011-12-21 Mapper Lithography Ip B.V. Lithography system
US6919570B2 (en) * 2002-12-19 2005-07-19 Advanced Electron Beams, Inc. Electron beam sensor
JP2004251764A (ja) * 2003-02-20 2004-09-09 Tokyo Seimitsu Co Ltd 電子ビーム像用ｔｄｉセンサ及びマスク検査装置
JP4738723B2 (ja) * 2003-08-06 2011-08-03 キヤノン株式会社 マルチ荷電粒子線描画装置、荷電粒子線の電流の測定方法及びデバイス製造方法
US20050088633A1 (en) 2003-10-24 2005-04-28 Intel Corporation Composite optical lithography method for patterning lines of unequal width
JP3962778B2 (ja) 2004-06-02 2007-08-22 株式会社日立ハイテクノロジーズ 電子ビーム検出器、並びにそれを用いた電子ビーム描画方法及び電子ビーム描画装置
CN1907190A (zh) 2005-07-25 2007-02-07 株式会社泉精器制作所 饮料制作器
JP2007042803A (ja) 2005-08-02 2007-02-15 Honda Motor Co Ltd イオン注入マスクおよびその製造方法、並びにイオン注入マスクを用いた炭化珪素半導体装置およびその製造方法
TWI524153B (zh) * 2005-09-15 2016-03-01 瑪波微影Ｉｐ公司 微影系統，感測器及測量方法
WO2007032670A1 (en) * 2005-09-15 2007-03-22 Mapper Lithography Ip B.V. Lithography system, sensor and measuring method
US7868300B2 (en) * 2005-09-15 2011-01-11 Mapper Lithography Ip B.V. Lithography system, sensor and measuring method
US7521685B2 (en) 2006-01-18 2009-04-21 General Electric Company Structured scintillator and systems employing structured scintillators
JP2008041890A (ja) * 2006-08-04 2008-02-21 Canon Inc マルチ荷電粒子ビームの計測方法、露光装置、及びデバイス製造方法
JP5301312B2 (ja) * 2008-03-21 2013-09-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置の較正用基板及び描画方法
NL1037820C2 (en) 2010-03-22 2011-09-23 Mapper Lithography Ip Bv Lithography system, sensor, sensor surface element and method of manufacture.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5892230A (en) * 1997-05-29 1999-04-06 Massachusetts Institute Of Technology Scintillating fiducial patterns
US6791094B1 (en) * 1999-06-24 2004-09-14 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for determining beam parallelism and direction

Also Published As

Publication number Publication date
EP2550671A1 (en) 2013-01-30
USRE47287E1 (en) 2019-03-12
US8357906B2 (en) 2013-01-22
RU2012144624A (ru) 2014-04-27
TWI533350B (zh) 2016-05-11
CN102906850B (zh) 2015-09-09
US20110253900A1 (en) 2011-10-20
EP2550671B1 (en) 2016-03-16
WO2011117253A1 (en) 2011-09-29
JP5738973B2 (ja) 2015-06-24
NL1037820C2 (en) 2011-09-23
KR101667770B1 (ko) 2016-10-19
KR20130067252A (ko) 2013-06-21
JP2013522923A (ja) 2013-06-13
TW201301332A (zh) 2013-01-01
CN102906850A (zh) 2013-01-30

Similar Documents

Publication Publication Date Title
RU2562126C2 (ru) Система литографии, датчик, элемент преобразователя и способ изготовления
TWI582817B (zh) 電子束偵測之裝置及方法
JP5882348B2 (ja) マルチ小ビーム露光装置における２つの小ビーム間の距離を決定する方法
KR101959945B1 (ko) 빔렛 위치를 결정하기 위한 방법 및 멀티 빔렛 노출 장치에서 2개의 빔렛들 간의 거리를 결정하기 위한 방법
US8604431B2 (en) Pattern-height measuring apparatus and pattern-height measuring method
JP2000123768A (ja) 荷電粒子線装置及び荷電粒子線装置の調整方法及び半導体デバイスの製造方法
JP6084888B2 (ja) 欠陥検査装置及び欠陥検査方法
JP5199097B2 (ja) リソグラフィシステム、センサ、測定方法
US7560693B2 (en) Electron-beam size measuring apparatus and size measuring method with electron beams
JP6237048B2 (ja) パターン計測方法及び装置
JP2012114124A (ja) 高さ測定方法および荷電粒子ビーム描画装置