KR101667770B1 - 리소그래피 시스템, 센서, 변환기 엘리먼트 및 제조 방법 - Google Patents

리소그래피 시스템, 센서, 변환기 엘리먼트 및 제조 방법 Download PDF

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KR101667770B1
KR101667770B1 KR1020127027493A KR20127027493A KR101667770B1 KR 101667770 B1 KR101667770 B1 KR 101667770B1 KR 1020127027493 A KR1020127027493 A KR 1020127027493A KR 20127027493 A KR20127027493 A KR 20127027493A KR 101667770 B1 KR101667770 B1 KR 101667770B1
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South Korea
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layer
transducer element
sensor
charged particle
beamlets
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KR20130067252A (ko
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라바 한포우그
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마퍼 리쏘그라피 아이피 비.브이.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2443—Scintillation detectors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Measurement Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)
KR1020127027493A 2010-03-22 2011-03-22 리소그래피 시스템, 센서, 변환기 엘리먼트 및 제조 방법 Active KR101667770B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL1037820 2010-03-22
NL1037820A NL1037820C2 (en) 2010-03-22 2010-03-22 Lithography system, sensor, sensor surface element and method of manufacture.
PCT/EP2011/054372 WO2011117253A1 (en) 2010-03-22 2011-03-22 Lithography system, sensor, converter element and method of manufacture

Publications (2)

Publication Number Publication Date
KR20130067252A KR20130067252A (ko) 2013-06-21
KR101667770B1 true KR101667770B1 (ko) 2016-10-19

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KR1020127027493A Active KR101667770B1 (ko) 2010-03-22 2011-03-22 리소그래피 시스템, 센서, 변환기 엘리먼트 및 제조 방법

Country Status (9)

Country Link
US (2) US8357906B2 (enExample)
EP (1) EP2550671B1 (enExample)
JP (1) JP5738973B2 (enExample)
KR (1) KR101667770B1 (enExample)
CN (1) CN102906850B (enExample)
NL (1) NL1037820C2 (enExample)
RU (1) RU2562126C2 (enExample)
TW (1) TWI533350B (enExample)
WO (1) WO2011117253A1 (enExample)

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NL1037820C2 (en) 2010-03-22 2011-09-23 Mapper Lithography Ip Bv Lithography system, sensor, sensor surface element and method of manufacture.
WO2012062931A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Method for determining a distance between two beamlets in a multi-beamlet exposure apparatus
NL2008174C2 (en) * 2012-01-24 2013-08-21 Mapper Lithography Ip Bv Device for spot size measurement at wafer level using a knife edge and a method for manufacturing such a device.
JP2015509666A (ja) * 2012-03-08 2015-03-30 マッパー・リソグラフィー・アイピー・ビー．ブイ． アライメントセンサーとビーム測定センサーを備えている荷電粒子リソグラフィシステム
US9653259B2 (en) * 2012-05-14 2017-05-16 Mapper Lithography Ip B.V. Method for determining a beamlet position and method for determining a distance between two beamlets in a multi-beamlet exposure apparatus
KR102126061B1 (ko) 2013-11-28 2020-06-23 삼성전자주식회사 이미지 센서 및 그 제조 방법
US20180217059A1 (en) * 2015-07-31 2018-08-02 Fei Company Segmented detector for a charged particle beam device
NL2019503B1 (en) 2016-09-08 2018-08-31 Mapper Lithography Ip Bv Fabricating unique chips using a charged particle multi-beamlet lithography system
US10522472B2 (en) 2016-09-08 2019-12-31 Asml Netherlands B.V. Secure chips with serial numbers
US10418324B2 (en) 2016-10-27 2019-09-17 Asml Netherlands B.V. Fabricating unique chips using a charged particle multi-beamlet lithography system
KR102359084B1 (ko) 2016-12-23 2022-02-07 에이에스엠엘 네델란즈 비.브이. 하전 입자 멀티-빔렛 리소그래피 시스템을 이용한 고유 칩 제조

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US20070057204A1 (en) 2005-09-15 2007-03-15 Pieter Kruit Lithography system, sensor and measuring method
WO2007032670A1 (en) 2005-09-15 2007-03-22 Mapper Lithography Ip B.V. Lithography system, sensor and measuring method

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US20070057204A1 (en) 2005-09-15 2007-03-15 Pieter Kruit Lithography system, sensor and measuring method
WO2007032670A1 (en) 2005-09-15 2007-03-22 Mapper Lithography Ip B.V. Lithography system, sensor and measuring method

Also Published As

Publication number Publication date
NL1037820C2 (en) 2011-09-23
US8357906B2 (en) 2013-01-22
TW201301332A (zh) 2013-01-01
JP2013522923A (ja) 2013-06-13
USRE47287E1 (en) 2019-03-12
RU2012144624A (ru) 2014-04-27
CN102906850A (zh) 2013-01-30
EP2550671A1 (en) 2013-01-30
TWI533350B (zh) 2016-05-11
KR20130067252A (ko) 2013-06-21
JP5738973B2 (ja) 2015-06-24
CN102906850B (zh) 2015-09-09
US20110253900A1 (en) 2011-10-20
WO2011117253A1 (en) 2011-09-29
RU2562126C2 (ru) 2015-09-10
EP2550671B1 (en) 2016-03-16

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