TWI527083B - 半導體裝置及形成具ｌｃ濾波器於基板上之射頻前端模組之方法 - Google Patents

半導體裝置及形成具ｌｃ濾波器於基板上之射頻前端模組之方法 Download PDF

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TWI527083B
TWI527083B TW100115015A TW100115015A TWI527083B TW I527083 B TWI527083 B TW I527083B TW 100115015 A TW100115015 A TW 100115015A TW 100115015 A TW100115015 A TW 100115015A TW I527083 B TWI527083 B TW I527083B
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Taiwan
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wire
filter
coupled
forming
integrated passive
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TW100115015A
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TW201220349A (en
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金炫泰
李鎔澤
金光
安秉勳
劉凱
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史達晶片有限公司
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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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    • H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
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Description

半導體裝置及形成具LC濾波器於基板上之射頻前端模組之方法
本發明大體上關於半導體裝置，且更特別地，關於一種半導體裝置及使用一整合被動元件將具有電感電容濾波器和整合被動元件濾波器之射頻前端模阻形成於一基板上之方法。
半導體裝置通常係見於現代電子產品中。半導體裝置隨著電性元件之數量及密度而變。分立式半導體裝置大體上包含一種電性元件類型，例如，發光二極體(LED)、小訊號電晶體、電阻器、電容器、電感器或功率金屬氧化物半導體場效電晶體(MOSFET)。整合式半導體裝置典型地包含成千上萬的電性元件。整合式半導體裝置之範例包含微控制器、微處理器、電荷耦合裝置(CCD)、太陽電池及數位微型反射鏡裝置(DMD)。
半導體裝置執行例如高速計算、收發電磁波訊號、控制電子裝置、轉換太陽光成為電力和產生電視顯示器之視覺投影。半導體裝置係見於娛樂、通訊、電力轉換、網路、電腦及消費性產品領域中。半導體裝置也見於軍事應用、航空、汽車、工業控制及辦公室設備中。
半導體裝置利用半導體材料的電性特性。半導體材料之原子結構允許它的導電性受到施加電場或基極電流或透過摻雜製程來操縱。摻雜製程將雜質引入該半導體材料中以操縱並控制該半導體裝置之導電性。
一半導體裝置包含主動和被動電性結構。包含二極體及場效電晶體之主動結構控制電流之流動。藉由改變摻雜位準及施加一電場或基極電流，該電晶體不是增進就是壓制該電流流動。包含電阻器、電容器及電感器之被動結構建立執行各種電性功能所需之電壓及電流間之關係。該些主動及被動結構係電性連接以形成致能該半導體裝置來執行高速計算及格其它有用功能之電路。
半導體裝置大體上係使用例如前端製程及後端製程之二複雜製程來製造，每一個製程可能涉及成千上萬步驟。前端製程涉及在一半導體晶圓表面上形成複數個晶粒。每一個晶粒典型地係一模一樣且包含由電性連接主動及被動元件所形成之電路。後端製程涉及將來自已完成晶圓中之個別晶粒進行單粒化並封裝該晶粒以提供結構支撐及環境隔離。
半導體製程之一目標係製造更小的半導體裝置。較小的裝置典型地耗用較少電力，具有較高執行效率以及可更有效率地被製造。此外，較小的半導體裝置具有可期待用於更小終端產品之較小佔用空間。一較小晶粒尺寸可藉由改善該前端製程而產生具有較小且較高密度之主動及被動元件之晶粒而得。後端製程可藉由改善電性互連及封裝材料來產生具有較小佔用空間之半導體裝置封裝。
半導體製程之另一目標係產生較高執行效率之半導體裝置。裝置執行效率之增加可藉由形成能夠以較高速度來操作之主動元件而得。在例如射頻(RF)無線通訊之高頻應用中，整合被動元件(IPD)常常被納入該半導體裝置內。整合被動元件範例包含電阻器、電容器和電感器。一典型射頻無線系統在一或更多半導體封裝中，需要多個整合被動元件以執行所需電性功能。
在一無線射頻系統中，一射頻前端模組(FEM)係耦接至一天線以收發無線射頻訊號。該射頻前端模組分開並濾波該發送射頻訊號及接收射頻訊號以避開該些射頻訊號間之衝突或跨界。分開之發送射頻訊號及接收射頻訊號係由一射頻收發器所收發以進行解調變並轉換成基頻訊號而供進一步訊號處理。該射頻系統可為一行動電路、個人數位助理或其它無線通訊裝置之一部分。
第1圖顯示耦接至天線12之傳統射頻前端模組10之方塊圖。射頻前端模組10具有發送部及接收部。在該發送部中，來自該射頻收發器之發送射頻訊號被繞送至功率放大器14之輸入端以增加訊號功率及放大率。功率放大器14之輸出端係耦接至射頻耦合器15以偵測該發送訊號功率位準。該發送射頻訊號係由電感電容濾波器16所濾波並繞送至發送/接收切換器18以切換於發送射頻訊號及接收射頻訊號之間。當發送/接收切換器18進行選擇時，該發送射頻訊號被繞送至雙工器20以進行自二埠轉至一埠之頻率多工以提供天線12傳輸。
在該接收部中，來自天線12之接收射頻訊號係透過雙工器處理以進行自一埠轉至二埠之頻率多工。當發送/接收切換器18進行選擇時，該接收射頻訊號被繞送至表面聲波(SAW)濾波器22。表面聲波濾波器22使用一壓電晶體或陶瓷將一電性訊號轉成一機械波。該機械波被該壓電結構所延遲而拒斥頻帶外訊號以提供一窄通帶響應。該濾波被轉換回一電性訊號並繞送至該射頻收發器以做為該接收射頻訊號。
第2圖顯示用於配置射頻前端模組10之傳統半導體封裝23。基板24係具有複數個內部介電層26及例如銀或銅之導電層28之多層低溫共燒陶瓷(LTCC)壓合基板。低溫共燒陶瓷基板24包含例如電阻器30、電容器32及電感器34之內部被動元件，以及在該多層基板內之內嵌射頻電路36。發送/接收切換器晶粒38及分立式電阻器40被安裝至低溫共燒陶瓷基板24之頂部表面並電性連接至導電層28。一表面聲波濾波器42被安裝至低溫共燒陶瓷基板24並電性連接至導電層28。表面聲波濾波器42雖因它的機械特性而相當地大，但可被放入低溫共燒陶瓷基板24內所形成之凹陷處，以企圖降低半導體封裝23之高度。
如同具有表面聲波濾波器晶粒42之半導體封裝23所配置般地，射頻前端模組10代表一相當笨重且複雜結構並涉及高製造成本。在較小封裝及較低成本之要求驅動該市場時，需要額外工作來改進該射頻前端模組設計。
現存有對於不使用一笨重表面聲波濾波器之射頻前端模組之需求。據此，在一實施例中，本發明係一種半導體裝置之製造方法，包括提供一基板及在該基板上形成一射頻前端模組之步驟。該射頻前端模組包含形成具有耦接之輸入端以用於接收一發送訊號之電感電容低通濾波器、形成具有耦接至該電感電容低通濾波器之輸出端之第一端之發送/接收切換器、形成具有耦接至該發送/接收切換器之第二端之第一端及提供一射頻訊號之第二端之雙工器、及形成具有耦接至該發送/接收切換器之第三端以接收一接收訊號之輸入端及提供一濾波接收訊號之輸出端之整合被動元件帶通濾波器。
在另一實施例中，本發明係一種半導體裝置之製造方法，包括提供一基板及在該基板上形成一射頻前端模組之步驟。該射頻前端模組包含形成具有耦接之輸入端以用於接收一發送訊號以及提供一濾波發送訊號之輸出端之電感電容低通濾波器、及形成具有耦接之輸入端以用於接收一接收訊號以及提供一濾波接收訊號之輸出端之整合被動元件濾波器。
在另一實施例中，本發明係一種半導體裝置之製造方法，包括提供一基板、在該基板上形成一電感電容濾波器及在該基板上形成一整合被動元件濾波器之步驟。該電感電容濾波器具有耦接之輸入端以用於接收一發送訊號以及提供一濾波發送訊號之輸出端。該整合被動元件濾波器具有耦接之輸入端以用於接收一接收訊號以及提供一濾波接收訊號之輸出端。
在另一實施例中，本發明係一種半導體裝置，包括一基板及形成於該基板上之電感電容濾波器。該電感電容濾波器具有耦接之輸入端以用於接收一發送訊號以及提供一濾波發送訊號之輸出端。一整合被動元件濾波器係形成於該基板上。該整合被動元件濾波器具有耦接之輸入端以用於接收一接收訊號以及提供一濾波接收訊號之輸出端。
本發明係描述於參考該些圖形以進行下列說明之一或更多實施例中，其中，類似編號代表相同或類似構件。儘管本發明已就取得本發明目的之最佳模式做說明，然而那些熟知此項技術之人士會理解到想要將包含於下列揭示與圖式所支持之所附申請專利範圍和它們等效例所定義之本發明精神及範圍內之替代例、修改例及等效例涵蓋在內。
半導體裝置大體上係使用二複合製程來製造：前端製程及後端製程。前端製程涉及在一半導體晶圓表面上形成複數個晶粒。在該晶圓上之每一個晶粒內含主動及被動電性元件，其係電性連接以形成功能性電性電路。例如電晶體及二極體之主動電性元件具有控制電流流動之能力。例如電容器、電感器、電阻器和變壓器之被動電性元件建立用以執行電性電路功能所需之電壓及電流間之關係。
被動和主動元件係由包含摻雜、沉積、微影成像、蝕刻及平坦化之一系列製程步驟來形成於該半導體晶圓表面上。摻雜藉由例如離子植入或熱擴散技術將雜質引入該半導體材料中。該摻雜製程改變主動裝置內之半導體材料導電性，以轉換該半導體材料成為一絕緣體、導體，或動態地改變該半導體材料導電性以回應一電場或基極電流。電晶體內含用以依據該電場或基極電流之應用來致能該電晶體，以增進或限制電流流動所需而安排之不同摻雜類型及程度之區域。
主動和被動元件係由具有不同電性特性之材料層所形成。該些層可藉由依沉積材料類型所部分決定之各種沉積技術來形成。例如，薄膜沉積技術可涉及化學氣相沉積(CVD)、物理氣相沉積(PVD)、電解電鍍及無電鍍製程。將每一層大體上進行圖案化以形成主動元件、被動元件或元件間之電性連接之各部分。
該些層可使用微影成像技術來進行圖案化，其涉及將例如光阻劑之感光性材料沉積覆蓋在欲圖案化層上。利用光來使一圖案自一光罩轉移至該光阻劑。使用一溶劑將受光之光阻劑圖案部分移除，以露出圖案化下層部分。將剩餘光阻劑移除，而留下一圖案化層。替代性地，一些材料類型係藉由使用例如無電鍍及電解電鍍技術，將該材料直接沉積至前一沉積/蝕刻製程所形成之區域或孔隙內。
將一薄膜材料沉積於一現存圖案上可擴大下層圖案並產生不均勻平坦表面。需要一均勻平坦表面以產生較小且更高密度包裝之主動及被動元件。平坦化可被使用以移除來自該晶圓表面之材料並產生一均勻平坦表面。平坦化涉及利用一拋光片來拋光該晶圓表面。一研磨材料及腐蝕性化學藥品係於拋光期間添加至該晶圓表面。該化學藥品之研磨及腐蝕動作所結合之機械動作移除任何不規則拓樸，而產生一均勻平坦表面。
後端製程涉及切割或單粒化該已完成晶圓成為個別晶粒，並接著封裝該晶粒以提供結構性支撐和環境隔離。為了單粒化該晶粒，該晶圓係沿著所謂切割道或劃線之晶圓無功能區域來劃線並切斷。使用一雷射切割工具或鋸刀來單粒化該晶圓。在單粒化後，該個別晶粒被安裝至包含接腳或接觸墊片以與其它系統元件互相連接之封裝基板。形成於該半導體晶粒上之接觸墊片接著被連接至該封裝內之接觸墊片。可利用銲接凸塊、短柱凸塊、導電膏或接線來製造該些電性連接。一密封劑或其它密封材料係沉積於該封裝上以提供物理性支撐及電性隔離。該已完成封裝接著被插入至一電性系統中，且所產生之半導體裝置功能可由其它系統元件利用之。
第3圖說明具有內含將複數個半導體封裝安裝於它的表面上之晶片載體基板或印刷電路板(PCB)52之電子裝置50。電子裝置50可視應用而具有一半導體封裝類型或多種半導體封裝類型。不同半導體封裝類型係基於說明目的而顯示於第3圖。
電子裝置50可為一獨立系統，其使用該些半導體封裝來執行一或更多電性功能。替代性地，電子裝置50可以是一較大型系統之子元件。例如，電子裝置50可以是一行動電話、個人數位助理(PDA)、數位攝影機(DVC)或其它電子通訊裝置之部件。替代性地，電子裝置50可以是一圖形卡、網路介面卡或可插入至一電腦中之其它訊號處理卡。該半導體封裝可包含微處理器、記憶體、特殊用途積體電路(ASIC)、邏輯電路、類比電路、射頻電路、分立式裝置或其它半導體晶粒或電性元件。小型化及降低重量對於這些產品是否被市場接受而言係重要的。半導體裝置間之距離必須下降以得到較高密度。
在第3圖中，印刷電路板52提供一般性基板以提供安裝於該印刷電路板上之半導體封裝之結構支撐及電性連接。訊號導線54係使用蒸鍍、電解電鍍、無電鍍、網印或其它合適金屬沉積製程來形成於印刷電路板52一表面上或各層內。訊號導線54提供該些半導體封裝、安裝元件及其它外部系統元件之每一個間之電性通訊。導線54也提供該些半導體封裝中每一個之電力及接地。
在一些實施例中，一半導體裝置具有二封裝層級。第一層級封裝係提供機械性及電性附接該半導體晶粒至一中間載體之技術。第二層級封裝涉及機械性及電性附接該中間載體至該印刷電路板上。在其它實施例中，一半導體裝置可以只具有該第一層級封裝，其中，該晶粒係機械性及電性地直接安裝至該印刷電路板上。
基於說明目的，一些包含打線封裝56及覆晶封裝58之第一層級封裝類型係示於印刷電路板52上。此外，所示一些包含球狀柵格陣列(BGA)60、凸塊晶片載體(BCC)62、雙列式封裝(DIP)64、平面柵格陣列(LGA)66、多晶片模組(MCM)68、四邊扁平無接腳封裝(QFN)70及四邊扁平封裝72之第二層級封裝類型係安裝於印刷電路板52上。依據系統需求，利用任何第一和第二層級封裝型結合所架構之任何半導體封裝結合以及其它電子元件可被連接至印刷電路板52。在一些實施例中，電子裝置50包含單一附接半導體封裝，而其它實施例需要多個互相連接之封裝。藉由結合單一基板上之一或更多半導體封裝，製造商可整合預製元件至電子裝置及系統中。因為該些半導體封裝包含複雜功能，故電子裝置可使用較便宜元件及一貫化製程來製造之。產生之裝置較不會失敗且製造費用也較少，因而對於消費者而言成本也較低。
第4a-4c圖顯示示範性半導體封裝。第4a圖說明安裝於印刷電路板52上之雙列式封裝64的進一步細節。半導體晶粒74包含一作用區，內含類比或數位電路，配置成形成於該晶粒內並根據該晶粒之電性設計產生電性互連之主動裝置、被動裝置、導電層及介電層。例如，該電路可包含一或更多電晶體、二極體、電感器、電容器、電阻器及形成於該半導體晶粒74之作用區內的其它電路構件。接觸墊片76係例如鋁(Al)、銅(Cu)、錫(Sn)、鎳(Ni)、金(Au)或銀(Ag)之一或更多導電材料層，且被電性連接至形成於半導體晶粒74內之電路構件。在雙列式封裝64組合期間，半導體晶粒74係使用一金矽共熔合金層或例如熱環氧化物或環氧樹脂之黏性材料來安裝至一中間載體78。該封裝本體包含例如聚合物或陶瓷之絕緣封裝材料。導體接腳80或接線82提供半導體晶粒74及印刷電路板52間之電性互連。密封劑84係沉積覆蓋於該封裝上，藉此阻止濕氣及微粒進入該封裝並污染晶粒74及接線82而提供環境保護。
第4b圖說明安裝於印刷電路板52上之凸塊晶片載體62的進一步細節。半導體晶粒88係使用一底膠或環氧樹脂黏性材料92來安裝於載體90上。接線94提供接觸墊片96及98間之第一層級封裝內連線。密封化合物或密封劑100係沉積於半導體晶粒88及接線94上，以提供該裝置物理性支撐和電性隔離。接觸墊片102係使用例如電解電鍍或無電鍍之合適金屬沉積製程來形成於印刷電路板一表面上以阻止氧化作用。接觸墊片102係電性連接至印刷電路板52內之一或更多訊號導線54。凸塊104係形成於凸塊晶片載體62之接觸墊片98及印刷電路板52之接觸墊片102之間。
在第4c圖中，利用一覆晶型第一層級封裝技術將半導體晶粒58面向下地安裝至中間載體106。半導體晶粒58之作用區108包含類比或數位電路，配置成根據該晶粒的電性設計所形成之主動裝置、被動裝置、導電層及介電層。例如，該電路可包含一或更多電晶體、二極體、電感器、電容器、電阻器及在作用區108內之其它電路構件。半導體晶粒58係透過凸塊110來電性及機械性地連接至載體106。
球狀柵格陣列60係利用一球狀柵格陣列型第二層級封裝技術，使用凸塊112來電性及機械性地連接至印刷電路板52。半導體晶粒58係透過凸塊110、訊號線114及凸塊112來電性連接至印刷電路板52中之訊號導線54。一密封化合物或密封劑116係沉積於半導體晶粒58及載體106上，以提供該裝置物理性支撐及電性隔離。該覆晶半導體裝置提供自半導體晶粒58上之主動裝置至印刷電路板52上之導線的短導電路徑，用以減少訊號傳送距離、降低電容並改善整體電路執行效率。在另一實施例中，可使用覆晶型第一層級封裝技術將該半導體晶粒58直接機械性且電性地連接至印刷電路板52而不使用中間載體106。
第5圖說明包含耦接至用於收發無線射頻訊號之天線之射頻前端模組(FEM)122之射頻系統120。射頻前端模組122分開並濾波該發送射頻訊號(Tx)及接收射頻訊號(Rx)以避開該些射頻訊號間之衝突或跨界。該發送訊號及接收訊號係由射頻收發器126所收發以進行解調變並轉換成基頻訊號。基頻訊號處理方塊128執行該些基頻訊號所需之電性功能。射頻系統120可被使用於一行動電路、個人數位助理或其它無線通訊裝置中。
第6圖說明射頻前端模組122之方塊圖。射頻前端模組122具有發送部及接收部。在該發送部中，來自射頻收發器126之發送訊號被繞送至功率放大器130之輸入端以增加訊號功率及放大。功率放大器130之輸出端係耦接至射頻耦合器132以偵測該發送訊號功率位準。該發送訊號係由電感電容濾波器134進行低通濾波並繞送至發送/接收切換器136以切換於發送訊號及接收訊號之間。當發送/接收切換器136進行選擇時，該發送訊號被繞送至雙工器138以執行自二埠轉至一埠之頻率多工以提供天線124傳輸。
在該接收部中，來自天線124之接收訊號係透過雙工器138進行處理以進行自一埠轉至二埠之頻率多工。當發送/接收切換器136進行選擇時，該接收訊號被繞送至整合被動元件濾波器140以進行帶通濾波。該濾波接收訊號被繞送至該射頻收發器126以轉換成基頻以供方塊128進行訊號處理。
第7圖顯示與第3圖及第4a-4c圖相關之半導體基板150，內含例如矽、鍺、砷化鎵或用於結構支撐之其它主體半導體材料之底材。一作用區152係形成於半導體基板150一表面上。作用區152內含類比或數位電路，配置成形成於基板150內並根據它的電性設計和功能進行電性互連之主動裝置、被動裝置、導電層及介電層。例如，該電路可包含一或更多電晶體、二極體和形成於作用表面152內以配置類比電路或數位電路之其它電路構件。作用區152約佔用半導體晶粒150之整體厚度或高度H之5-10%。在一實施例中，半導體基板150佔用一3.2毫米(mm)乘2.2毫米的面積。
第8圖顯示形成於作用表面152上或上方以提供射頻訊號處理之例如薄膜電感器、電容器及電阻器之複數個整合被動元件以及其它半導體晶粒或元件。在本實施例中，功率放大器130及射頻耦合器132係形成於基板150外。該整合被動元件濾波器140係形成於基板150之作用表面152上。整合被動元件158係形成於作用表面152上之電阻器。整合被動元件160係具有由保護層168所涵蓋在金屬層164及166間之介電層162之金屬層-絕緣層-金屬層(MIM)電容器。整合被動元件170係具有形成於保護層174上之捲繞導電層172之電感器。來自第6圖之發送/接收切換器136及雙工器138係形成於作用表面152上。使用一錫膏印刷、壓縮成型、轉注成型、液體密封成型、真空疊合、旋塗或其它合適塗抹器將一密封劑或密封化合物176沉積於元件136-170及作用表面152上。密封劑176可為聚合物複合材料，例如，具有填充劑之環氧樹脂、具有填充劑之環氧丙烯酯或具有獨特填充劑之聚合物。密封劑176係無導電性且在環境上保護該半導體裝置隔離於外部構件及污染。
內含形成於共同基板150上之整合被動元件140、158、160和170及其它射頻訊號處理元件之半導體封裝178可被使用於例如微波雷達、電信系統、無線通訊、電子切換器及執行射頻電性功能之其它裝置之高頻應用中。該些整合被動元件提供例如平衡-不平衡轉換器(balun)、共振器、高通濾波器、低通濾波器、帶通濾波器(BPF)、對稱性高品質共振變壓器、匹配網路、射頻耦合器和調諧電容器之電路功能之電性特性曲線。例如，該些整合被動元件可充當前端無線射頻元件，其可置放於該天線及收發器之間。該無線應用可為使用例如寬頻分碼多重存取(WCDMA)頻帶(個人通訊系統頻帶、IMT頻帶、低頻)和全球行動通訊系統(GSM)頻帶(低頻帶及高頻帶)之多頻帶操作之行動電話。
第9圖顯示在半導體封裝178之共同基板150上之小尺寸射頻前端模組122中之一部分俯視實體佈局。在基板150之發送部中，電感電容濾波器134接收來自功率放大器130及射頻耦合器132之發送訊號。該濾波發送訊號被繞送至發送/接收切換器136及雙工器138以根據第6圖進行傳輸。
第10圖顯示電感電容濾波器134之實體佈局之進一步細部，包含在一平衡-不平衡轉換器或低通濾波器安排中，用於該發送訊號之導線或線圈179、180、181、182和183及電容器184、185、186、187、188、189和191。該些導線179-183配置著用以展示電感特性而捲繞之細長線導線。該些導線可為使用濺鍍、電解電鍍、無電鍍製程或其它合適金屬沉積製程所形成之鋁、銅、錫、鎳、金、銀或其它合適導電材料層中其中一層或更多層。電容器184-191係使用一薄膜介電質來配置，以增加電容密度。
第11圖顯示具有電感器179-183及電容器184-191之低通濾波器134之電性示意圖。尤其，電容器184係耦接在導線179之第一及第二末端之間。電容器185及186係串接在導線180之第一及第二末端之間。導線179及180被交織以展示互感特性。該些導線179-183可為環狀、橢圓形、多角形或真實外形，以提升品質因數並降低晶粒面積。
回到第9圖，在基板150之接收部中，該接收訊號係自雙工器138及發送/接收切換器136繞送至整合被動元件濾波器140。第12圖顯示整合被動元件濾波器140之進一步細部，包含在一帶通濾波器安排中，用於該接收訊號之導線或線圈192、193、194、195、196、197、198和199及電容器200、201、202、204、206、207、208和210。該些導線192-199配置著用以展示電感及互感特性而捲繞並交織之細長線導線。該些導線可為使用濺鍍、電解電鍍、無電鍍製程或其它合適金屬沉積製程所形成之鋁、銅、錫、鎳、金、銀或其它合適導電材料層中其中一層或更多層。電容器200-210係使用一薄膜介電質來配置，以增加電容密度。
該導線192具有耦接至埠212及埠214以提供差動模式操作之第一及第二末端。在一實施例中，埠212係一單端不平衡埠，且埠214係一接地端。替代性地，埠212係一單端不平衡埠，且埠214係該接地端。電容器200係耦接在埠212及埠214之間。該導線193具有耦接至平衡埠216及218以提供差動模式操作之第一及第二末端。電容器201係耦接在埠216及埠218之間。電容器202及204係串接在導線194之末端間。該導線194係利用平面隔離之無重疊安排方式環繞導線192及193周邊來放置。導線195係環繞導線194周邊而形成，並連接至一低阻抗接地點以降低裝置間干擾及發射損失。該導線192與導線193係不同尺寸及/或外形。在一實施例中，導線192之寬度為30-50微米(μm)，具有200-400微米外部尺寸。導線193之寬度為30-50微米，具有400-600微米外部尺寸。導線192與導線193相隔約100微米；導線192與導線194相隔約100微米；導線193與導線194相隔約100微米。互感係形成於導線192及193之間、導線192及194之間、及導線193及194之間。該些導線192及193可為環狀、橢圓形、多角形或真實外形，以提升品質因數並降低晶粒面積。不同尺寸之導線192及193產生不同埠阻抗。
該導線196具有耦接至埠220及埠222以提供差動模式操作之第一及第二末端。在一實施例中，埠220係一單端不平衡埠，且埠222係一接地端。替代性地，埠220係一單端不平衡埠，且埠222係該接地端。電容器206係耦接在埠220及埠222之間。該導線197具有耦接至平衡埠224及226以提供差動模式操作之第一及第二末端。電容器207係耦接在埠224及埠226之間。電容器208及210係串接在導線198之末端間。該導線198係利用平面隔離之無重疊安排方式環繞導線196及197周邊來放置。導線199係環繞導線198周邊而形成，並連接至一低阻抗接地點以降低裝置間干擾及發射損失。該導線196與導線199係不同尺寸及/或外形。在一實施例中，導線196之寬度為30-50微米，具有200-400微米外部尺寸。導線197之寬度為30-50微米，具有400-600微米外部尺寸。導線196與導線197相隔約100微米；導線196與導線198相隔約100微米；導線197與導線198相隔約100微米。互感係形成於導線196及197之間、導線196及198之間、及導線197及198之間。該些導線196及197可為環狀、橢圓形、多角形或真實外形，以提升品質因數並降低晶粒面積。不同尺寸之導線196及197產生不同埠阻抗。
第13圖顯示具有電感器192、193和194及電容器200、201、202和204之整合被動元件帶通濾波器140之電性示意圖。該些電感器192-194被捲繞以在該些電感器間產生相當小的磁性耦合以在該拒斥頻帶內提供高衰減。例如，電感器192、193和194之值分別被設定為1.89、4.91和2.15十億分之一亨利(nH)。電容器200、201、202和204之值分別被設定為1.97、3.9和3.9微微法拉(pF)。該些箭頭說明電感器192、193和194間之互感。電感器192和193間之耦合係數係CC192-193=0.048，電感器193和194間之耦合係數係CC193-194=-0.148，且電感器192和194間之耦合係數係CC192-194=0.148。電感器192和194間之耦合隨著隔離增加而減少，導致產生一較窄帶通響應，尤指該響應之高頻邊緣處。電感器193和194間之耦合隨著隔離減少而增加，且該帶通下側處之衰減極移動至一高頻，導致一具有較高拒斥之較窄頻寬。該些電感器196、197和198及電容器206、207、208和210具有類似之示意性代表。
第14圖顯示內含安裝至內含射頻收發器126之半導體封裝230之射頻前端模組122之半導體封裝178。功率放大器130及射頻耦合器132可被整合至半導體封裝230內或配置成獨立元件。半導體封裝178係電性連接至具有凸塊232之半導體封裝230。一底膠材料234係沉積於環繞凸塊232之半導體封裝178及230之間。該些堆疊式半導體封裝178及230係安裝置壓合板236並電性連接凸塊238。半導體封裝178係以接線240電性連接至基板236。基板236包含用於半導體封裝178和230間之訊號繞送之複數個導線242以及外部元件。
如第6-13圖所見地，射頻前端模組122可被配置於具有提供用於該發送訊號及接收訊號之處理通道之電感電容濾波器134及整合被動元件濾波器140的低成本半導體封裝178內。半導體封裝178相較於第1-2圖所述之笨重表面聲波濾波器及低溫共燒陶瓷基板係更小且更具成本效益。
第15圖顯示一高電阻率基板244之實施例。一絕緣層246係形成於基板244上。例如電感器、電容器及電阻器之整合被動元件250及252可被形成於導電層248上。一聚醯胺基板254係形成於絕緣層246上。具有整合被動元件濾波器140之射頻前端模組122係形成於基板254上。內含例如功率放大器130、射頻耦合器132、發送/接收切換器136、雙工器138之射頻元件之半導體封裝256被安裝至基板254並電性連接著接線258。半導體封裝256也利用接線260電性連接導電層248。
儘管本發明一或更多實施例已被詳加說明，然熟知此項技術之人士會理解到那些實施例之修正及改寫可被產生而不偏離下列申請專利範圍所提出之本發明範圍。
10．．．射頻前端模組
12．．．天線
14．．．功率放大器
15．．．射頻耦合器
16．．．電感電容濾波器
18．．．發送/接收切換器
20．．．雙工器
22．．．表面聲波濾波器
24．．．基板
26．．．內部介電層
28．．．導電層
30．．．電阻器
32．．．電容器
34．．．電感器
36．．．內嵌射頻電路
38．．．發送/接收切換器晶粒
40．．．分立式電阻器
42．．．表面聲波濾波器
50．．．電子裝置
52．．．印刷電路板
54．．．導線
56．．．打線封裝
58．．．覆晶封裝
60．．．球狀柵格陣列
62．．．凸塊晶片載體
64．．．雙列式封裝
66．．．平面柵格陣列
68．．．多晶片模組
70．．．四邊扁平無接腳封裝
72．．．四邊扁平封裝
74．．．半導體晶粒
76．．．接觸墊片
78．．．中間載體
80．．．導體接腳
82．．．接線
84．．．密封劑
88．．．半導體晶粒
90．．．載體
92．．．底膠或環氧樹脂黏性材料
94．．．接線
96．．．接觸墊片
98．．．接觸墊片
100．．．密封化合物或密封劑
102．．．接觸墊片
104．．．凸塊
106．．．中間載體
108．．．作用區
110．．．凸塊
112．．．凸塊
114．．．訊號線
116．．．密封化合物或密封劑
120．．．射頻系統
122．．．射頻前端模組
124．．．天線
126．．．射頻收發器
128．．．基頻訊號處理方塊
130．．．功率放大器
132．．．射頻耦合器
134．．．電感電容濾波器
136．．．發送/接收切換器
138．．．雙工器
140．．．整合被動元件濾波器
150．．．半導體基板
152．．．作用表面
158．．．整合被動元件
160．．．整合被動元件
162．．．介電層
164．．．金屬層
166．．．金屬層
168．．．保護層
170．．．整合被動元件
172．．．導電層
174．．．保護層
176．．．密封劑或密封化合物
178．．．半導體封裝
179．．．導線
180．．．導線
181．．．導線
182．．．導線
183．．．導線
184．．．電容器
185．．．電容器
186．．．電容器
187．．．電容器
188．．．電容器
189．．．電容器
191．．．電容器
192．．．導線
193．．．導線
194．．．導線
195．．．導線
196．．．導線
197．．．導線
198．．．導線
199．．．導線
200．．．電容器
201．．．電容器
202．．．電容器
204．．．電容器
206．．．電容器
207．．．電容器
208．．．電容器
210．．．電容器
212．．．埠
214．．．埠
216．．．埠
218．．．埠
220．．．埠
222．．．埠
224．．．埠
226．．．埠
230．．．半導體封裝
232．．．凸塊
234．．．底膠材料
236．．．基板
238．．．凸塊
240．．．接線
242．．．導線
244．．．基板
246．．．絕緣層
248．．．導電層
250．．．整合被動元件
252．．．整合被動元件
254．．．基板
256．．．半導體封裝
258．．．接線
260．．．接線
第1圖說明具有一表面聲波濾波器之傳統射頻前端模組之方塊圖。
第2圖說明配置具有第1圖表面聲波濾波器之射頻前端模組之傳統低溫共燒陶瓷基板。
第3圖說明其表面上安裝著不同封裝類型之印刷電路板。
第4a-4c圖說明安裝至該印刷電路板之代表性半導體封裝之進一步細部。
第5圖說明使用於無線通訊裝置中之射頻系統。
第6圖說明在第5圖射頻系統中之射頻前端模組之方塊圖。
第7圖說明具有一作用表面之半導體基板。
第8圖說明具有形成於該半導體基板之作用表面上之整合被動元件之半導體封裝。
第9圖說明具有電感電容濾波器及整合被動元件濾波器之射頻前端模組之實體電路佈局。
第10圖說明該電感電容濾波器之實體電路佈局。
第11圖說明該電感電容濾波器之示意圖。
第12圖說明該整合被動元件濾波器之實體電路佈局。
第13圖說明該整合被動元件濾波器之示意圖。
第14圖說明安裝至一射頻收發器晶粒之射頻前端模組半導體封裝。
第15圖說明安裝在一高電阻率基板上之射頻前端模組半導體封裝。
124．．．天線
134．．．電感電容濾波器
136．．．發送/接收切換器
138．．．雙工器
140．．．整合被動元件濾波器
150．．．半導體基板
178．．．半導體封裝

Claims (15)

  1. 一種半導體裝置之製造方法，包括：提供一基板；及在該基板上形成一射頻前端模組(RF FEM)，該射頻前端模組包含：(a)形成具有耦接之輸入端以用於接收一發送訊號之電感電容(LC)低通濾波器，(b)形成具有耦接至該電感電容低通濾波器之輸出端之第一端之發送/接收(Tx/Rx)切換器，(c)形成具有耦接至該發送/接收切換器之第二端之第一端及提供一射頻訊號之第二端之雙工器，和(d)形成具有耦接至該發送/接收切換器之第三端以接收一接收訊號之輸入端及提供一濾波接收訊號之輸出端之整合被動元件(IPD)帶通濾波器。
  2. 如申請專利範圍第1項之方法，其中，形成該整合被動元件帶通濾波器包含：形成用以展示電感特性而捲繞並具有耦接至該整合被動元件帶通濾波器之輸入端之第一和第二末端之第一導線；形成用以展示電感特性而捲繞並具有耦接至該整合被動元件帶通濾波器之輸出端之第一和第二末端之第二導線，該第一導線係置於該第二導線附近以展示互感特性；及形成用以展示電感特性而捲繞並具有第一和第二 末端之第三導線，該第三導線係置於該第一及第二導線附近以展示互感特性。
  3. 如申請專利範圍第1項之方法，其中，形成該電感電容低通濾波器包含：形成用以展示電感特性而捲繞並具有耦接至該電感電容低通濾波器之輸出端之第一和第二末端之第一導線；及形成用以展示電感特性而捲繞並具有耦接至該電感電容低通濾波器之輸入端之第一和第二末端之第二導線，該第一導線係置於該第二導線附近以展示互感特性。
  4. 如申請專利範圍第3項之方法，其中，形成該整合被動元件帶通濾波器進一步包含：在該第一導線之第一及第二末端間形成一第一電容器；及在該第二導線之第一及第二末端間形成一第二電容器。
  5. 如申請專利範圍第1項之方法，進一步包含：在一半導體封裝內提供一射頻收發器；將內含該射頻前端模組之基板安裝於該半導體封裝上；及電性連接該射頻前端模組至該射頻收發器。
  6. 一種半導體裝置之製造方法，包括：提供一基板；及 在該基板上形成一電感電容(LC)濾波器，該電感電容濾波器具有耦接之輸入端以用於接收一發送訊號以及提供一濾波發送訊號之輸出端；及在該基板上形成一整合被動元件(IPD)濾波器，該整合被動元件濾波器具有耦接之輸入端以用於接收一接收訊號以及提供一濾波接收訊號之輸出端。
  7. 如申請專利範圍第6項之方法，進一步包含：在該基板上形成一發送/接收(Tx/Rx)切換器，該發送/接收切換器具有耦接至該電感電容濾波器之輸出端之第一端；及在該基板上形成一雙工器，該雙工器具有耦接至該發送/接收切換器之第二端之第一端及提供一射頻訊號之第二端。
  8. 如申請專利範圍第6項之方法，其中，形成該整合被動元件濾波器包含：形成用以展示電感特性而捲繞並具有耦接至該整合被動元件濾波器之輸入端之第一和第二末端之第一導線；形成用以展示電感特性而捲繞並具有耦接至該整合被動元件濾波器之輸出端之第一和第二末端之第二導線，該第一導線係置於該第二導線附近以展示互感特性；及形成用以展示電感特性而捲繞並具有第一和第二末端之第三導線，該第三導線係置於該第一及第二導 線附近以展示互感特性。
  9. 如申請專利範圍第8項之方法，其中，形成該整合被動元件濾波器進一步包含：在該第一導線之第一及第二末端間形成一第一電容器；在該第二導線之第一及第二末端間形成一第二電容器；及在該第三導線之第一及第二末端間形成一第三電容器。
  10. 如申請專利範圍第6項之方法，進一步包含：在一半導體封裝內提供一射頻收發器；將內含該射頻前端模組之基板安裝於該半導體封裝上；及電性連接該射頻前端模組至該射頻收發器。
  11. 一種用於射頻前端模組(RF FEM)的半導體裝置，包括：一半導體基板；一第一整合被動元件(IPD)濾波器，其被置於該半導體基板上以用於處理該射頻前端模組的一發送訊號；一第二整合被動元件濾波器，其被置於該半導體基板上以用於處理該射頻前端模組的一接收訊號；以及一發送/接收(Tx/Rx)切換器，其被置於該半導體基板上並且包含耦接至該第一整合被動元件濾波器之 一輸出端的一第一端和耦接至該第二整合被動元件濾波器之一輸入端的一第二端。
  12. 如申請專利範圍第11項之半導體裝置，進一步包含一雙工器，其被置於該基板上並且包含耦接至該發送/接收切換器之一第三端的一第一端以及一第二端用於提供一射頻訊號。
  13. 如申請專利範圍第11項之半導體裝置，其中該第一整合被動元件濾波器包含：一第一導線，被捲繞以展示電感特性並具有耦接至該第一整合被動元件濾波器之輸入端之第一和第二末端；一第二導線，被捲繞以展示電感特性並具有耦接至該第一整合被動元件濾波器之輸出端之第一和第二末端，該第二導線係置於該第一導線附近以展示互感特性。
  14. 如申請專利範圍第13項之半導體裝置，其中該第一整合被動元件濾波器進一步包含：一第一電容器，耦接於該第一導線之第一及第二末端間；及一第二電容器，耦接於該第二導線之第一及第二末端間。
  15. 如申請專利範圍第13項之半導體裝置，其中該第二整合被動元件濾波器包含：一第一導線，被捲繞以展示電感特性並具有耦接 至該第二整合被動元件濾波器之輸入端之第一和第二末端；一第二導線，被捲繞以展示電感特性並具有耦接至該第二整合被動元件濾波器之輸出端之第一和第二末端，該第二導線係置於該第一導線附近以展示互感特性；及一第三導線，被捲繞以展示電感特性並係置於該第一及第二導線附近以展示互感特性。
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