TWI517273B - 具有支撐終端墊的半導體晶片 - Google Patents

具有支撐終端墊的半導體晶片 Download PDF

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Publication number
TWI517273B
TWI517273B TW101107851A TW101107851A TWI517273B TW I517273 B TWI517273 B TW I517273B TW 101107851 A TW101107851 A TW 101107851A TW 101107851 A TW101107851 A TW 101107851A TW I517273 B TWI517273 B TW I517273B
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TW
Taiwan
Prior art keywords
electrical conductor
conductor pad
pad
solder
semiconductor wafer
Prior art date
Application number
TW101107851A
Other languages
English (en)
Chinese (zh)
Other versions
TW201243972A (en
Inventor
羅登Ｒ 托帕西歐
麥克Ｚ 蘇
尼爾 麥爾蘭
Original Assignee
Ａｔｉ科技Ｕｌｃ公司
高級微裝置公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ａｔｉ科技Ｕｌｃ公司, 高級微裝置公司 filed Critical Ａｔｉ科技Ｕｌｃ公司
Publication of TW201243972A publication Critical patent/TW201243972A/zh
Application granted granted Critical
Publication of TWI517273B publication Critical patent/TWI517273B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01223—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in liquid form, e.g. by dispensing droplets or by screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/147—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
TW101107851A 2011-03-25 2012-03-08 具有支撐終端墊的半導體晶片 TWI517273B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/072,554 US8647974B2 (en) 2011-03-25 2011-03-25 Method of fabricating a semiconductor chip with supportive terminal pad

Publications (2)

Publication Number Publication Date
TW201243972A TW201243972A (en) 2012-11-01
TWI517273B true TWI517273B (zh) 2016-01-11

Family

ID=45992817

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101107851A TWI517273B (zh) 2011-03-25 2012-03-08 具有支撐終端墊的半導體晶片

Country Status (7)

Country Link
US (1) US8647974B2 (enExample)
EP (1) EP2689455B1 (enExample)
JP (1) JP5764256B2 (enExample)
KR (1) KR101508669B1 (enExample)
CN (1) CN103460379A (enExample)
TW (1) TWI517273B (enExample)
WO (1) WO2012134710A1 (enExample)

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US9978656B2 (en) * 2011-11-22 2018-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming fine-pitch copper bump structures
US9224688B2 (en) * 2013-01-04 2015-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Metal routing architecture for integrated circuits
US10242142B2 (en) * 2013-03-14 2019-03-26 Coventor, Inc. Predictive 3-D virtual fabrication system and method
US9793231B2 (en) * 2015-06-30 2017-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Under bump metallurgy (UBM) and methods of forming same
US9818711B2 (en) * 2015-06-30 2017-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Post-passivation interconnect structure and methods thereof
KR102410018B1 (ko) * 2015-09-18 2022-06-16 삼성전자주식회사 반도체 패키지
US9929112B2 (en) 2015-09-25 2018-03-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US10165682B2 (en) 2015-12-28 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Opening in the pad for bonding integrated passive device in InFO package
US9704832B1 (en) * 2016-02-29 2017-07-11 Ixys Corporation Die stack assembly using an edge separation structure for connectivity through a die of the stack
KR102663140B1 (ko) 2016-06-24 2024-05-08 삼성디스플레이 주식회사 디스플레이 장치
MY192389A (en) * 2016-07-01 2022-08-18 Intel Corp Systems, methods, and apparatuses for implementing a pad on solder mask (posm) semiconductor substrate package
US10290584B2 (en) * 2017-05-31 2019-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive vias in semiconductor packages and methods of forming same
DE102017210654B4 (de) * 2017-06-23 2022-06-09 Infineon Technologies Ag Elektronische Vorrichtung, die ein einen Hohlraum umfassendes Umverdrahtungsschicht-Pad umfasst
US10665559B2 (en) * 2018-04-11 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Device, semiconductor package and method of manufacturing semiconductor package
JP2026510132A (ja) 2022-10-31 2026-04-01 キョーセラ・エーブイエックス・コンポーネンツ・コーポレーション 多層コンデンサ
JP2026510128A (ja) 2022-10-31 2026-04-01 キョーセラ・エーブイエックス・コンポーネンツ・コーポレーション 多層コンデンサ

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Also Published As

Publication number Publication date
US20120241985A1 (en) 2012-09-27
JP2014511039A (ja) 2014-05-01
EP2689455A1 (en) 2014-01-29
KR101508669B1 (ko) 2015-04-07
EP2689455B1 (en) 2016-08-31
KR20140012689A (ko) 2014-02-03
TW201243972A (en) 2012-11-01
CN103460379A (zh) 2013-12-18
US8647974B2 (en) 2014-02-11
WO2012134710A1 (en) 2012-10-04
JP5764256B2 (ja) 2015-08-19
WO2012134710A8 (en) 2012-12-06

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