KR101508669B1 - 지지 터미널 패드를 갖는 반도체 칩 - Google Patents

지지 터미널 패드를 갖는 반도체 칩 Download PDF

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KR101508669B1
KR101508669B1 KR1020137025186A KR20137025186A KR101508669B1 KR 101508669 B1 KR101508669 B1 KR 101508669B1 KR 1020137025186 A KR1020137025186 A KR 1020137025186A KR 20137025186 A KR20137025186 A KR 20137025186A KR 101508669 B1 KR101508669 B1 KR 101508669B1
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conductor pad
pad
solder
conductor
semiconductor chip
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KR20140012689A (ko
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로덴 알. 토파키오
마이클 지. 수
네일 맥릴런
Original Assignee
에이티아이 테크놀로지스 유엘씨
어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01223—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in liquid form, e.g. by dispensing droplets or by screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/147—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
KR1020137025186A 2011-03-25 2012-03-03 지지 터미널 패드를 갖는 반도체 칩 Active KR101508669B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/072,554 US8647974B2 (en) 2011-03-25 2011-03-25 Method of fabricating a semiconductor chip with supportive terminal pad
US13/072,554 2011-03-25
PCT/US2012/027631 WO2012134710A1 (en) 2011-03-25 2012-03-03 Semiconductor chip with supportive terminal pad

Publications (2)

Publication Number Publication Date
KR20140012689A KR20140012689A (ko) 2014-02-03
KR101508669B1 true KR101508669B1 (ko) 2015-04-07

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KR1020137025186A Active KR101508669B1 (ko) 2011-03-25 2012-03-03 지지 터미널 패드를 갖는 반도체 칩

Country Status (7)

Country Link
US (1) US8647974B2 (enExample)
EP (1) EP2689455B1 (enExample)
JP (1) JP5764256B2 (enExample)
KR (1) KR101508669B1 (enExample)
CN (1) CN103460379A (enExample)
TW (1) TWI517273B (enExample)
WO (1) WO2012134710A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7749885B2 (en) * 2006-12-15 2010-07-06 Micron Technology, Inc. Semiconductor processing methods, methods of forming contact pads, and methods of forming electrical connections between metal-containing layers
US9978656B2 (en) * 2011-11-22 2018-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming fine-pitch copper bump structures
US9224688B2 (en) 2013-01-04 2015-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Metal routing architecture for integrated circuits
US10242142B2 (en) * 2013-03-14 2019-03-26 Coventor, Inc. Predictive 3-D virtual fabrication system and method
US9793231B2 (en) * 2015-06-30 2017-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Under bump metallurgy (UBM) and methods of forming same
US9818711B2 (en) 2015-06-30 2017-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Post-passivation interconnect structure and methods thereof
KR102410018B1 (ko) * 2015-09-18 2022-06-16 삼성전자주식회사 반도체 패키지
US9929112B2 (en) 2015-09-25 2018-03-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US10165682B2 (en) 2015-12-28 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Opening in the pad for bonding integrated passive device in InFO package
US9704832B1 (en) 2016-02-29 2017-07-11 Ixys Corporation Die stack assembly using an edge separation structure for connectivity through a die of the stack
KR102663140B1 (ko) 2016-06-24 2024-05-08 삼성디스플레이 주식회사 디스플레이 장치
MY192389A (en) * 2016-07-01 2022-08-18 Intel Corp Systems, methods, and apparatuses for implementing a pad on solder mask (posm) semiconductor substrate package
US10290584B2 (en) * 2017-05-31 2019-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive vias in semiconductor packages and methods of forming same
DE102017210654B4 (de) * 2017-06-23 2022-06-09 Infineon Technologies Ag Elektronische Vorrichtung, die ein einen Hohlraum umfassendes Umverdrahtungsschicht-Pad umfasst
US10665559B2 (en) * 2018-04-11 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Device, semiconductor package and method of manufacturing semiconductor package
DE112023004553T5 (de) 2022-10-31 2025-08-14 KYOCERA AVX Components Corporation Mehrschichtiger Kondensator

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5912505A (en) 1995-11-07 1999-06-15 Sumitomo Metal (Smi) Electronics Devices, Inc. Semiconductor package and semiconductor device
US6118180A (en) 1997-11-03 2000-09-12 Lsi Logic Corporation Semiconductor die metal layout for flip chip packaging
US7098540B1 (en) 2003-12-04 2006-08-29 National Semiconductor Corporation Electrical interconnect with minimal parasitic capacitance
JP2007088478A (ja) 2005-09-21 2007-04-05 Agere Systems Inc 相互接続層置換用のアンダー・ボンディング・パッド経路

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615913A (en) 1968-11-08 1971-10-26 Westinghouse Electric Corp Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating
US4034469A (en) 1976-09-03 1977-07-12 Ibm Corporation Method of making conduction-cooled circuit package
JPH06163629A (ja) 1992-11-26 1994-06-10 Sanyo Electric Co Ltd 半導体集積回路のボンディングパッド構造
JP3138159B2 (ja) * 1994-11-22 2001-02-26 シャープ株式会社 半導体装置、半導体装置実装体、及び半導体装置の交換方法
KR100306842B1 (ko) * 1999-09-30 2001-11-02 윤종용 범프 패드에 오목 패턴이 형성된 재배치 웨이퍼 레벨 칩 사이즈 패키지 및 그 제조방법
DE10122324A1 (de) * 2001-05-08 2002-11-14 Philips Corp Intellectual Pty Flexible integrierte monolithische Schaltung
CN1225778C (zh) * 2002-05-27 2005-11-02 联华电子股份有限公司 一种凸点与存储器激光修补工艺
US7547623B2 (en) * 2002-06-25 2009-06-16 Unitive International Limited Methods of forming lead free solder bumps
US6861749B2 (en) 2002-09-20 2005-03-01 Himax Technologies, Inc. Semiconductor device with bump electrodes
JP2005175128A (ja) * 2003-12-10 2005-06-30 Fujitsu Ltd 半導体装置及びその製造方法
JP4708148B2 (ja) * 2005-10-07 2011-06-22 ルネサスエレクトロニクス株式会社 半導体装置
JP5017872B2 (ja) 2006-02-06 2012-09-05 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP4247690B2 (ja) * 2006-06-15 2009-04-02 ソニー株式会社 電子部品及その製造方法
KR101120285B1 (ko) * 2007-07-30 2012-03-07 엔엑스피 비 브이 스트레스 완충 반도체 부품 및 그의 제조 방법
US20090032941A1 (en) 2007-08-01 2009-02-05 Mclellan Neil Under Bump Routing Layer Method and Apparatus
KR20090041936A (ko) 2007-10-25 2009-04-29 주식회사 동부하이텍 반도체 소자의 금속 패드
US7790501B2 (en) 2008-07-02 2010-09-07 Ati Technologies Ulc Semiconductor chip passivation structures and methods of making the same
US8030781B2 (en) 2008-09-19 2011-10-04 Taiwan Semiconductor Manufacturing Co., Ltd. Bond pad structure having dummy plugs and/or patterns formed therearound
US8058108B2 (en) * 2010-03-10 2011-11-15 Ati Technologies Ulc Methods of forming semiconductor chip underfill anchors

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5912505A (en) 1995-11-07 1999-06-15 Sumitomo Metal (Smi) Electronics Devices, Inc. Semiconductor package and semiconductor device
US6118180A (en) 1997-11-03 2000-09-12 Lsi Logic Corporation Semiconductor die metal layout for flip chip packaging
US7098540B1 (en) 2003-12-04 2006-08-29 National Semiconductor Corporation Electrical interconnect with minimal parasitic capacitance
JP2007088478A (ja) 2005-09-21 2007-04-05 Agere Systems Inc 相互接続層置換用のアンダー・ボンディング・パッド経路

Also Published As

Publication number Publication date
US8647974B2 (en) 2014-02-11
US20120241985A1 (en) 2012-09-27
JP5764256B2 (ja) 2015-08-19
WO2012134710A8 (en) 2012-12-06
EP2689455B1 (en) 2016-08-31
CN103460379A (zh) 2013-12-18
TW201243972A (en) 2012-11-01
TWI517273B (zh) 2016-01-11
JP2014511039A (ja) 2014-05-01
WO2012134710A1 (en) 2012-10-04
EP2689455A1 (en) 2014-01-29
KR20140012689A (ko) 2014-02-03

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