TWI515419B - 光瞳透射率分布之測定方法、程式、電腦可讀取之媒體、曝光裝置之控制方法、曝光方法及曝光裝置、以及元件製造方法 - Google Patents
光瞳透射率分布之測定方法、程式、電腦可讀取之媒體、曝光裝置之控制方法、曝光方法及曝光裝置、以及元件製造方法 Download PDFInfo
- Publication number
- TWI515419B TWI515419B TW100105040A TW100105040A TWI515419B TW I515419 B TWI515419 B TW I515419B TW 100105040 A TW100105040 A TW 100105040A TW 100105040 A TW100105040 A TW 100105040A TW I515419 B TWI515419 B TW I515419B
- Authority
- TW
- Taiwan
- Prior art keywords
- optical system
- light
- pupil
- diffracted light
- measurement
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
-
- H10P76/2041—
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
- G01M11/0221—Testing optical properties by determining the optical axis or position of lenses
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
- G01M11/0228—Testing optical properties by measuring refractive power
- G01M11/0235—Testing optical properties by measuring refractive power by measuring multiple properties of lenses, automatic lens meters
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Engineering & Computer Science (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US30808710P | 2010-02-25 | 2010-02-25 | |
| US13/011,320 US9389519B2 (en) | 2010-02-25 | 2011-01-21 | Measuring method and measuring apparatus of pupil transmittance distribution, exposure method and exposure apparatus, and device manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201140019A TW201140019A (en) | 2011-11-16 |
| TWI515419B true TWI515419B (zh) | 2016-01-01 |
Family
ID=44476238
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100105040A TWI515419B (zh) | 2010-02-25 | 2011-02-16 | 光瞳透射率分布之測定方法、程式、電腦可讀取之媒體、曝光裝置之控制方法、曝光方法及曝光裝置、以及元件製造方法 |
| TW105123218A TWI630378B (zh) | 2010-02-25 | 2011-02-16 | Measuring device and exposure device, and component manufacturing method |
| TW104138470A TWI548868B (zh) | 2010-02-25 | 2011-02-16 | A method of measuring a photomask transmittance distribution, a program, a computer-readable medium, a control method of an exposure apparatus, an exposure method, and an exposure apparatus, and a device manufacturing method |
| TW107119872A TWI706125B (zh) | 2010-02-25 | 2011-02-16 | 測量裝置及曝光裝置、以及元件製造方法 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105123218A TWI630378B (zh) | 2010-02-25 | 2011-02-16 | Measuring device and exposure device, and component manufacturing method |
| TW104138470A TWI548868B (zh) | 2010-02-25 | 2011-02-16 | A method of measuring a photomask transmittance distribution, a program, a computer-readable medium, a control method of an exposure apparatus, an exposure method, and an exposure apparatus, and a device manufacturing method |
| TW107119872A TWI706125B (zh) | 2010-02-25 | 2011-02-16 | 測量裝置及曝光裝置、以及元件製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9389519B2 (enExample) |
| JP (2) | JP5691608B2 (enExample) |
| KR (1) | KR20130054942A (enExample) |
| TW (4) | TWI515419B (enExample) |
| WO (1) | WO2011105307A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011049075A1 (ja) * | 2009-10-20 | 2011-04-28 | 株式会社ニコン | 波面収差測定方法及び波面収差測定機 |
| CN102620917A (zh) * | 2012-04-11 | 2012-08-01 | 长春理工大学 | 透射式光学元件光致热变形像质分析方法 |
| KR102170864B1 (ko) * | 2012-05-02 | 2020-10-28 | 가부시키가이샤 니콘 | 동공 휘도 분포의 평가 방법 및 개선 방법, 조명 광학계 및 그 조정 방법, 노광 장치, 노광 방법, 및 디바이스 제조 방법 |
| JP5969848B2 (ja) * | 2012-07-19 | 2016-08-17 | キヤノン株式会社 | 露光装置、調整対象の調整量を求める方法、プログラム及びデバイスの製造方法 |
| DE102013204466A1 (de) | 2013-03-14 | 2014-09-18 | Carl Zeiss Smt Gmbh | Messung einer optischen Symmetrieeigenschaft an einer Projektionsbelichtungsanlage |
| US11402629B2 (en) | 2013-11-27 | 2022-08-02 | Magic Leap, Inc. | Separated pupil optical systems for virtual and augmented reality and methods for displaying images using same |
| CN111151750B (zh) * | 2014-11-14 | 2023-01-06 | 株式会社尼康 | 造形装置及造形方法 |
| CN113050280B (zh) * | 2015-05-04 | 2024-01-19 | 奇跃公司 | 用于虚拟和增强现实的分离光瞳光学系统以及用于使用其显示图像的方法 |
| KR102598505B1 (ko) * | 2015-05-20 | 2023-11-06 | 칼 짜이스 에스엠테 게엠베하 | 이미징 광학 시스템용 측정 방법 및 측정 배열체 |
| DE102016212477A1 (de) * | 2016-07-08 | 2018-01-11 | Carl Zeiss Smt Gmbh | Messverfahren und Messsystem zur interferometrischen Vermessung der Abbildungsqualität eines optischen Abbildungssystems |
| DE102017221005A1 (de) * | 2017-11-23 | 2019-05-23 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zur Kalibrierung einer diffraktiven Messstruktur |
| CN110243572B (zh) * | 2019-06-28 | 2021-07-27 | 中兴光电子技术有限公司 | 一种光波导群折射率测试装置和方法 |
| CN113552773B (zh) * | 2020-04-23 | 2023-02-10 | 上海微电子装备(集团)股份有限公司 | 光刻机、瞳面透过率分布检测装置及检测方法 |
| US20240085268A1 (en) * | 2022-09-14 | 2024-03-14 | National Central University | Optical wavefront measuring device and measuring method thereof |
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| FR2385241A1 (fr) * | 1976-12-23 | 1978-10-20 | Marie G R P | Convertisseurs de mode de polarisation pour faisceaux laser et generateurs de plasma les utilisant |
| JPH053300A (ja) | 1990-10-05 | 1993-01-08 | Nippon Steel Corp | 半導体装置 |
| JP2633091B2 (ja) * | 1991-02-22 | 1997-07-23 | キヤノン株式会社 | 像投影方法、回路製造方法及び投影露光装置 |
| JPH0536586A (ja) * | 1991-08-02 | 1993-02-12 | Canon Inc | 像投影方法及び該方法を用いた半導体デバイスの製造方法 |
| JP3102086B2 (ja) * | 1991-10-08 | 2000-10-23 | 株式会社ニコン | 投影露光装置及び方法、並びに回路素子形成方法 |
| JP3318620B2 (ja) * | 1992-01-28 | 2002-08-26 | 株式会社ニコン | 投影光学系の特性計測方法、並びに露光方法及び装置 |
| JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
| RU2084941C1 (ru) | 1996-05-06 | 1997-07-20 | Йелстаун Корпорейшн Н.В. | Адаптивный оптический модуль |
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| JP3302965B2 (ja) * | 2000-02-15 | 2002-07-15 | 株式会社東芝 | 露光装置の検査方法 |
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| JP4182277B2 (ja) * | 2002-03-04 | 2008-11-19 | 富士通マイクロエレクトロニクス株式会社 | マスク、有効光路の測定方法、及び露光装置 |
| JP4324957B2 (ja) | 2002-05-27 | 2009-09-02 | 株式会社ニコン | 照明光学装置、露光装置および露光方法 |
| JP2004304135A (ja) | 2003-04-01 | 2004-10-28 | Nikon Corp | 露光装置、露光方法及びマイクロデバイスの製造方法 |
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| JP2006524349A (ja) | 2003-04-24 | 2006-10-26 | メトコネックス カナダ インコーポレイティッド | 高フィルファクターアレイのための、連接式サスペンション構造を有する微小電子機械システム2次元ミラー |
| TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| TWI609409B (zh) | 2003-10-28 | 2017-12-21 | 尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
| JP2005159213A (ja) * | 2003-11-28 | 2005-06-16 | Canon Inc | シアリング干渉を利用した測定方法及び装置、それを利用した露光方法及び装置、並びに、デバイス製造方法 |
| WO2005071671A2 (en) | 2004-01-16 | 2005-08-04 | Koninklijke Philips Electronics N.V. | Optical system |
| KR101295438B1 (ko) | 2004-01-16 | 2013-08-09 | 칼 짜이스 에스엠티 게엠베하 | 편광변조 광학소자 |
| TWI505329B (zh) | 2004-02-06 | 2015-10-21 | 尼康股份有限公司 | 光學照明裝置、曝光裝置、曝光方法以及元件製造方法 |
| KR101368523B1 (ko) | 2004-06-04 | 2014-02-27 | 칼 짜이스 에스엠테 게엠베하 | 광학적 결상 시스템의 결상 품질을 측정하기 위한 시스템 |
| EP1621930A3 (en) * | 2004-07-29 | 2011-07-06 | Carl Zeiss SMT GmbH | Illumination system for a microlithographic projection exposure apparatus |
| JP4599936B2 (ja) * | 2004-08-17 | 2010-12-15 | 株式会社ニコン | 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法 |
| JP4335114B2 (ja) | 2004-10-18 | 2009-09-30 | 日本碍子株式会社 | マイクロミラーデバイス |
| TW200923418A (en) | 2005-01-21 | 2009-06-01 | Nikon Corp | Exposure device, exposure method, fabricating method of device, exposure system, information collecting device, and measuring device |
| JP4858439B2 (ja) | 2005-01-25 | 2012-01-18 | 株式会社ニコン | 露光装置及び露光方法並びにマイクロデバイスの製造方法 |
| DE102006015213A1 (de) | 2006-03-30 | 2007-10-11 | Carl Zeiss Smt Ag | Polarisationsbeeinflussende optische Anordnung |
| JP5197304B2 (ja) * | 2008-10-30 | 2013-05-15 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
-
2011
- 2011-01-21 US US13/011,320 patent/US9389519B2/en active Active
- 2011-02-14 WO PCT/JP2011/053588 patent/WO2011105307A1/en not_active Ceased
- 2011-02-14 KR KR1020127024951A patent/KR20130054942A/ko not_active Withdrawn
- 2011-02-16 TW TW100105040A patent/TWI515419B/zh active
- 2011-02-16 TW TW105123218A patent/TWI630378B/zh active
- 2011-02-16 TW TW104138470A patent/TWI548868B/zh active
- 2011-02-16 TW TW107119872A patent/TWI706125B/zh active
- 2011-02-18 JP JP2011033127A patent/JP5691608B2/ja active Active
-
2015
- 2015-01-22 JP JP2015010485A patent/JP5862992B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130054942A (ko) | 2013-05-27 |
| TWI630378B (zh) | 2018-07-21 |
| TW201140019A (en) | 2011-11-16 |
| JP5691608B2 (ja) | 2015-04-01 |
| TW201638571A (zh) | 2016-11-01 |
| US9389519B2 (en) | 2016-07-12 |
| TW201835540A (zh) | 2018-10-01 |
| TWI706125B (zh) | 2020-10-01 |
| US20110205514A1 (en) | 2011-08-25 |
| JP5862992B2 (ja) | 2016-02-16 |
| JP2011176312A (ja) | 2011-09-08 |
| JP2015144275A (ja) | 2015-08-06 |
| WO2011105307A1 (en) | 2011-09-01 |
| TW201608222A (zh) | 2016-03-01 |
| TWI548868B (zh) | 2016-09-11 |
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