TWI512152B - Method for setting the epitaxial reactor - Google Patents

Method for setting the epitaxial reactor Download PDF

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TWI512152B
TWI512152B TW099117542A TW99117542A TWI512152B TW I512152 B TWI512152 B TW I512152B TW 099117542 A TW099117542 A TW 099117542A TW 99117542 A TW99117542 A TW 99117542A TW I512152 B TWI512152 B TW I512152B
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reaction chamber
carrier
deposited
film
reaction
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TW099117542A
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TW201107542A (en
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Gerhard Karl Strauch
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Aixtron Ag
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Description

磊晶反應器之設置方法
本發明係有關一種將一反應室設置於一裝置之方法，該裝置在一被載板支撐於反應室中的基板上沉積至少一層薄膜，其使用一進氣機構，尤其是藉助一載氣而將反應氣體輸入反應室中，該反應氣體在熱表面上分解成分解產物，該分解產物含有構成薄膜的成分。
本發明尚有關一種在一被載板支撐之基板上沉積薄膜之裝置，其使用一進氣機構，尤其是藉助一載氣而將反應氣體輸入反應室中，該反應氣體在熱表面上分解成分解產物，該分解產物含有構成薄膜的成分。
DE 689 08 927 T2曾提出一種磊晶反應器，其具一扁圓柱形反應室。反應室頂部由一蓋板構成，該蓋板中心設有一進氣機構，其將反應氣體輸入反應室中。反應室底部構成載板，其承載複數個基板。基板各被容置在一可旋轉的基板座中。載板下方被加熱，其可利用一電阻加熱器或一射頻加熱器。
反應室中進行一MOCVD製程。此處利用載氣，例如氫，將第三族金屬有機化合物，例如TMGa或TMIn，輸入反應室中。並將一氫化物第二反應氣體輸入反應室中，如AsH3 、PH3 或NH3 ，而與第一反應氣體產生反應。
下方被加熱之載板上的基板，例如GaAs、GaN、InP或混合晶體，上方沉積出由第三及第五族元素構成的薄膜。輸入反應室中的反應氣體在熱表面上熱解。熱解生成的薄膜通常不只出現在基板表面，而亦會出現在包圍基板的載板面上。由於與載板相對的反應室頂部因載板之熱輻射而同樣被加熱，且未被及時冷卻，故該處亦會出現寄生成長。沉積在反應室壁上的薄膜基本上為不利。
此種裝置在沉積半導體薄膜後需原地進行反應室頂部的蝕刻，以移除反應室頂部及載板上的附著物。只沉積薄層時，反應室壁上的寄生成長較薄。其對薄膜品質的影響可被忍受。如該裝置沉積厚的且尤其是多層結構時，會在反應室壁上出現厚的塗層。沉積厚的且尤其是多層結構時，會對薄膜品質的一致性產生不利影響。
本發明之目的在於提供改良上述之裝置，使其可以先後連續之製程步驟沉積出品質一致的厚多層結構。
本目的由申請專利範圍第1項之反應室設置方法及申請專利範圍第6項之該反應室達成。
依據本發明，薄膜成長且尤其是基板上所沉積半導體薄膜之品質不僅受表面動力而亦受氣相動力左右。故決定薄膜品質的不僅是真正發生在基板表面的熱解製程，而亦包括預分解製程及接著在基板上方的氣相中進行的晶核及加成物生成。冷卻與載板相對的反應室頂部可調整反應室內的溫度分佈。其對輸入反應室之前驅物的預分解極為重要。研究及模型計算顯示，反應室內且尤其是在載板上的溫度分佈不僅受加熱載板的加熱裝置功率，亦受輻射損失及反應室壁的輻射特性左右。本發明發現，反應室表面的光學特性，如反射度、吸收度及透射度極為重要。依據本發明，反應室壁且尤其是與載板相對的反應室頂部之光學特性需與沉積薄膜互相配合。習知裝置沉積厚的薄膜所觀察到的不一致性原因在於，反應室頂部光學特性會在較長的成長時間內改變。如此使得進行製程時反應室頂部吸收的熱減少或增加，故反應室頂部的溫度改變，而影響整個反應室內部的溫度曲線，而亦影響製程氣體之分解且尤其是預分解特性。反射度改變時，反應室頂部對載板輻射的反射功率降低或增高。如此使得反應室內部的溫度分佈改變。光學特性的改變亦會使載板表面溫度且尤其是基板表面溫度在進行製程時持續升高或下降，直到反應室頂部均勻塗佈反應氣體之分解產物，尤其是當薄膜厚度大於光學厚度的兩倍，該光學厚度為製程溫度時最大輻射頻率波長的四分之一。本發明使至少反應室頂部自一開始便具有與欲塗佈薄膜或反應室寄生成長塗層相同之光學特性。此處之光學特性在製程溫度最大輻射所在的頻率範圍(浦朗克輻射定律或外因位移律)。成長溫度在500至1000℃的範圍中。
習知環形側壁及相對於載板之蓋板由高級鋼或鋁製成的磊晶反應器可依據本發明而簡單地改裝。側壁或頂部可設置尤其是可更換之襯件。該襯件之材料基板上具有與欲塗佈薄膜相同之光學特性。視反應室中之沉積材料而定，可選用配合該沉積薄膜光學特性之反應室壁。如欲沉積之半導體薄膜具高反射性且幾乎不透明，則選用之襯件同樣具一反射表面且不透明。欲塗佈薄膜稍微透明，則襯件亦同。一般之值為：透射度T～0；吸收度A～0.8；反射度R=1-A。
不需要使反應室壁表面且尤其是反應室頂部表面由與反應室中欲沉積薄膜相同之材料製成。依據本發明只需使壁極接近製程溫度範圍第三及第五族半導體薄膜之光學特性，其中R+A+T=1。如此可使反應室壁被塗佈時，與反應室之熱交互作用不改變。
本發明方法亦可先後進行多個長時間的沉積製程，而不需在其之間，亦即更換基板時，進行反應室之清潔。
所有揭示特徵本身皆具有發明性質。本發明揭示之特徵完全包含於本案之申請專利範圍中。

Claims (7)

  1. 一種將一反應室設置於一裝置之方法，該裝置在一被載板支撐於反應室中的基板上沉積至少一層第三及五族半導體薄膜，其使用一進氣機構，尤其是藉助一載氣而將反應氣體輸入反應室中，該反應氣體含有至少一第三族主族之有機金屬化合物和一第五族主族之氫化物並在反應室中之尤其是熱表面上分解成分解產物，該分解產物含有構成該第三及五族半導體薄膜的成分，其特徵為，使朝向與載板相對之反應室之至少一壁的反應室之表面選用一種光學反射度、光學吸收度及光學透射度與欲沉積薄膜一致的材料，以及該表面之材料進一步選用與欲沉積薄膜不同的材料。
  2. 如申請專利範圍第1項之方法，其中，載板及/或側壁表面具有欲沉積薄膜相同之光學特性。
  3. 如申請專利範圍第2項之方法，其中，載板構成反應室底部，進氣機構位在反應室頂部中心。
  4. 如申請專利範圍第1項之方法，其中，載氣及反應氣體以水平方向流經反應室。
  5. 如申請專利範圍第1項之方法，其中，配合欲沉積薄膜光學特性之反應室壁係可更換襯件。
  6. 一種在一被載板支撐之基板上沉積第三及五族半導體薄膜之裝置，其使用一進氣機構，尤其是藉助一載氣而將反應氣體輸入反應室中，該反應氣體含有至少一第三族主族之 有機金屬化合物和至少一第五族主族之化合物並在反應室中之尤其是熱表面上分解成分解產物，該分解產物含有構成該第三及五族半導體薄膜的成分，其特徵為，使與載板相對之反應室之至少一壁由一可更換襯件構成，該襯件之朝向反應室的表面具有與反應室中欲沉積之第三及五族半導體薄膜一致的光學反射度、光學吸收度及光學透射度，以及該表面之材料進一步選用與欲沉積之第三及五族半導體薄膜不同的材料。
  7. 如申請專利範圍第6項之裝置，其中，載板朝向反應室的表面及/或朝向反應室之側壁由襯件構成，其朝向反應室之表面的光學特性與欲沉積薄膜一致。
TW099117542A 2009-06-15 2010-06-01 Method for setting the epitaxial reactor TWI512152B (zh)

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DE102009025971A DE102009025971A1 (de) 2009-06-15 2009-06-15 Verfahren zum Einrichten eines Epitaxie-Reaktors

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EP2443274A1 (de) 2012-04-25
WO2010145969A1 (de) 2010-12-23
US20120094474A1 (en) 2012-04-19
JP2012530368A (ja) 2012-11-29
KR20120039636A (ko) 2012-04-25
DE102009025971A1 (de) 2010-12-16
RU2012101234A (ru) 2013-07-27
CN102803581A (zh) 2012-11-28
CN102803581B (zh) 2016-05-25
EP2443274B1 (de) 2019-03-20
US8846501B2 (en) 2014-09-30
TW201107542A (en) 2011-03-01

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