CN102803581A - 外延反应器的安装方法 - Google Patents

外延反应器的安装方法 Download PDF

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CN102803581A
CN102803581A CN2010800362341A CN201080036234A CN102803581A CN 102803581 A CN102803581 A CN 102803581A CN 2010800362341 A CN2010800362341 A CN 2010800362341A CN 201080036234 A CN201080036234 A CN 201080036234A CN 102803581 A CN102803581 A CN 102803581A
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G.K.斯特劳克
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    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Abstract

本发明涉及在设备中安装加工腔的方法，所述设备通过以下方式在由感受器保持在所述加工腔中的基材上沉积层：通过进气装置、特别是借助载运气体将加工气体引入所述加工腔中，所述加工气体在其中、特别是在热表面上分解成分解产物，该分解产物包括用于形成层的成分。为了能够在紧接着的先后依次的工艺步骤中可重现地沉积厚的多层结构而提高装置的效率，本发明建议，针对面向所述加工腔的表面，选择至少所述加工腔的与所述感受器相对的壁的材料，使其光学反射度、光学吸收度和光学透射度分别相应于层生长时待沉积的层的光学反射度、光学吸收度和光学透射度。

Description

外延反应器的安装方法
本发明涉及在设备中安装(Einrichten)加工腔的方法，所述设备通过以下方式在由感受器(Suszeptor)保持在加工腔中的基材上沉积至少一个层：通过进气装置、特别是借助载运气体将加工气体引入所述加工腔中，所述加工气体在其中、特别是在热表面上分解成分解产物，该分解产物包括用于形成层的成分。
本发明涉及一种设备，所述设备用于将层沉积在感受器的基材上，在该设备中，通过进气装置、特别是借助载运气体将加工气体引入所述加工腔中，所述加工气体在其中、特别是在热表面上分解成分解产物，该分解产物包括用于形成层的成分。
在DE 68908927T2中已知一种外延反应器(Epitaxie-Reaktor)，其在平面轮廓中包括圆形的、扁柱形的加工腔。加工腔的罩(Decke)由罩平板形成，进气装置位于其中心，通过该进气装置将加工气体引入所述加工腔中。加工腔的底部形成了感受器，并携带了多个基材。这些基材分别位于驱动旋转的基材夹持器上。该感受器从下部加热。这可以通过电阻加热或RF-加热进行。
在该加工腔中实施MOCVD-工艺。对此，使用载运气体如氢将第III主族的金属有机化合物如TMGa或TMIn引入该加工腔中。作为与该第一加工气体反应的组分向该加工腔中引入氢化物形式的第二加工气体。其可以涉及AsH3、PH3或NH3。
在位于下部加热的感受器上的基材上，将例如GaAs、GaN、InP或混合晶体沉积至由第III和第V主族的元素构成的层上。该向加工腔中引入的加工气体在热的表面上以热解方式分解。这种基于以热解方式初步分解的层的生长根据性质不仅会发生在基材表面上，而且发生在包围基材的感受器的平面上。由于加工腔的与感受器相对的罩通过由感受器发出的热辐射同时被加热，并且以不充分的程度冷却，因此在此处还发生寄生性生长(
Figure BDA0000135800500000011
Wachstum)。层在加工腔壁上的沉积一般是不期望的。
在这种设备中，在沉积薄的半导体层后，加工腔罩通过腐蚀(可以在“原位”进行)重复除去加工腔罩上和感受器上的涂层(Belegung)。在仅沉积薄的层时，根据属性，在加工腔壁上仅观察到非常薄的归因于寄生性生长的涂层(Beschichtung)。该涂层对层的品质的影响是可接受的。如果在这种设备中沉积厚的且特别是多层的结构，那么在加工腔壁上会形成厚的涂层。这时会观察到，在沉积厚的、特别是多层的结构时，带来了层的品质不可重现的结果。
本发明的任务在于，在紧接着的先后依次的工艺步骤中能够可重现地沉积厚的多层结构，从而以此方式提高设备的效率。
该任务通过权利要求1中给出的安装加工腔的方法和权利要求6中给出的如此安装的加工腔得以实现。
本发明基于以下知识，层的生长和特别是在基材上沉积的半导体层的品质不仅取决于表面动力学，也取决于气相动力学。对层的品质起决定性作用的也不仅仅是实际的、尽可能限制在基材表面上的热解分解过程。更重要的还有初步分解过程和由此产生的成核和加成形成(Adduktbildungen)，这在基材上方的气相中发生。通过冷却与感受器相对的加工腔罩(Prozesskammerdecke)可以调节加工腔内部的温度分布。后者对于向加工腔中引入的前体的初步分解(Vorzerlegung)具有更重要的意义。实验研究和建模计算已经表明，加工腔内部和特别是感受器上的温度分布不仅取决于加热感受器的加热器的功率，而且取决于辐射损失或形成加工腔的壁的辐射性质。已经发现，加工腔壁表面的光学性质：反射度、吸收度和透射度具有决定性意义。根据本发明，加工腔壁和特别是与感受器相对的加工腔罩的这些光学性质应当与待沉积的层具有的光学性质相协调(übereinstimmen)。在已知设备中沉积厚的层时观察到的可重现性的缺乏归因于在长时间生长的情况中加工腔罩的光学性质发生变化。这会导致如下的后果，加工腔罩在加工时吸收的热量会减少或增加，并且由此改变加工腔罩的温度，这对整体加工腔内部的温度分布产生影响，并且因此对加工气体的分解和特别是初步分解行为产生影响。反射度发生变化，会导致加工腔罩向感受器反射更少或更多的辐射功率。这不仅会引起加工腔内部的温度分布发生变化。光学性质的变化还引起了感受器的表面温度和特别是基材的表面温度在加工持续过程中连续地增加或连续地降低，直到加工腔壁均匀地涂覆上加工气体的分解产物。这例如是以下的情况，层厚比两倍的光学厚度厚，所述两倍的光学厚度相应于在加工温度下的辐射最大值的频率波长的四分之一。本发明建议，至少首先(vomeherein)向加工腔罩赋予如下的光学性质，其相应(entsprechen)于待沉积的层或由于寄生性生长而形成在加工腔上的涂层所具有的光学性质。在此相关的是加工温度条件下频率最大值所处频率范围中的光学性质(普朗克辐射定律或维恩位移定律)。生长温度处于500至1000℃的范围中。
根据现有技术的外延反应器，其环形侧壁和与感受器相对的罩例如由不锈钢或铝制成，该外延反应器可以根据本发明以较简单的方式改进。侧壁或罩设置有特别的可置换外壳件。该外壳件由具有基本上和待沉积的层相同或至少相近光学性质的材料制成。根据在加工腔内沉积的材料，可以使用在光学性质上与待沉积的层适配的加工腔壁。如果待沉积的半导体层为高反射性的或者几乎不透明的，那么该外壳件可以考虑几乎呈镜面的表面或者为不透明的。如果待沉积的层不是很透明，那么其也可以为外壳件。典型的值为：透射度T～0；吸收度A～0.8；反射度R＝1-A.
加工腔壁的表面和特别是加工腔罩的表面没有必要由相同的、在各个过程中构成待沉积的层的材料形成。根据本发明，应当如下构建壁，其在加工温度的范围中非常类似于III、V-半导体层的光学性质，其中R+A+T＝1。由此，在涂覆加工腔壁期间，与加工腔的热置换作用不发生改变。
使用本发明的方法还可以先后实施多个、持续长时间的沉积过程，而无需在各个过程之间以及在替换基材时对加工腔进行清洁。
所有公开的特征(本身)对于本发明都是重要的。在本申请的公开内容中引入相关/附属的优先权文件的公开内容(在先申请的文本)的全部内容，也为了以下目的，将该文件中的特征并入本申请的权利要求书中。

Claims (7)

1.在设备中安装加工腔的方法，所述设备通过以下方式在由感受器保持在所述加工腔中的基材上沉积至少一个层：通过进气装置、特别是借助载运气体将加工气体引入所述加工腔中，所述加工气体在其中特别地在热表面上分解成分解产物，该分解产物包括形成所述层的成分，其特征在于，针对面向所述加工腔的表面，选择至少所述加工腔的与所述感受器相对的壁的材料，使其光反射度、光吸收度和光透射度分别相应于所述层的光反射度、光吸收度和光透射度。
2.根据权利要求1或特别是与其相应的方法，其特征在于，所述感受器的表面和/或侧壁还具有相应于在层生长时沉积的层的光学性质。
3.根据前述权利要求中任一项或多项的方法，其特征在于，所述感受器位于加工腔的底部，并且所述进气装置设置在所述加工腔罩的中心。
4.根据前述权利要求中任一项或多项的方法，其特征在于，所述载运气体和所述加工气体在水平方向上流经所述加工腔。
5.根据前述权利要求中任一项或多项的方法，其特征在于，与待沉积的层的光学性质相配的加工腔壁为可置换的外壳件。
6.一种设备，所述设备通过以下方式在由感受器保持的基材上沉积至少一个层：通过进气装置、特别是借助载运气体将加工气体引入所述加工腔中，所述加工气体在其中、特别是在热表面上分解成分解产物，该分解产物包括形成所述层的成分，其特征在于，至少所述加工腔的与所述感受器相对的壁由可置换的外壳件构成，所述外壳件在其面向所述加工腔的表面上具有分别相应于所述加工腔中待沉积的层的光反射度、光吸收度和光透射度。
7.根据权利要求6或特别是与其相应的装置，其特征在于，所述感受器的面向加工腔的表面和/或所述面向加工腔的侧壁由外壳件构成，所述外壳件的与加工腔相对的表面具有相应于待沉积的层的光学性质。
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US20120094474A1 (en) 2012-04-19
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CN102803581B (zh) 2016-05-25
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