TWI502620B - 薄化半導體工件的方法 - Google Patents
薄化半導體工件的方法 Download PDFInfo
- Publication number
- TWI502620B TWI502620B TW101109367A TW101109367A TWI502620B TW I502620 B TWI502620 B TW I502620B TW 101109367 A TW101109367 A TW 101109367A TW 101109367 A TW101109367 A TW 101109367A TW I502620 B TWI502620 B TW I502620B
- Authority
- TW
- Taiwan
- Prior art keywords
- workpiece
- back side
- thickness
- exposed
- semiconductor
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 161
- 239000004065 semiconductor Substances 0.000 title claims description 80
- 238000012545 processing Methods 0.000 claims description 98
- 239000012530 fluid Substances 0.000 claims description 86
- 230000002093 peripheral effect Effects 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 24
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 18
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 238000012544 monitoring process Methods 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 238000011068 loading method Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 description 95
- 235000012431 wafers Nutrition 0.000 description 49
- 238000012546 transfer Methods 0.000 description 31
- 238000007789 sealing Methods 0.000 description 25
- 239000007921 spray Substances 0.000 description 14
- 238000000227 grinding Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 230000035882 stress Effects 0.000 description 8
- 238000003631 wet chemical etching Methods 0.000 description 8
- 239000002585 base Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 230000007717 exclusion Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- -1 polytetrafluoroethylene Polymers 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000013011 mating Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229920006169 Perfluoroelastomer Polymers 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000004811 fluoropolymer Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229920002943 EPDM rubber Polymers 0.000 description 1
- 229920002449 FKM Polymers 0.000 description 1
- 229920006370 Kynar Polymers 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000002262 irrigation Effects 0.000 description 1
- 238000003973 irrigation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02035—Shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Weting (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/922,762 US20060040111A1 (en) | 2004-08-20 | 2004-08-20 | Process chamber and system for thinning a semiconductor workpiece |
| US10/923,132 US7354649B2 (en) | 2004-08-20 | 2004-08-20 | Semiconductor workpiece |
| US10/923,363 US7288489B2 (en) | 2004-08-20 | 2004-08-20 | Process for thinning a semiconductor workpiece |
| US10/923,436 US20060046499A1 (en) | 2004-08-20 | 2004-08-20 | Apparatus for use in thinning a semiconductor workpiece |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201230144A TW201230144A (en) | 2012-07-16 |
| TWI502620B true TWI502620B (zh) | 2015-10-01 |
Family
ID=35968220
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094128423A TWI463527B (zh) | 2004-08-20 | 2005-08-19 | 薄化半導體工件的系統 |
| TW101109367A TWI502620B (zh) | 2004-08-20 | 2005-08-19 | 薄化半導體工件的方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094128423A TWI463527B (zh) | 2004-08-20 | 2005-08-19 | 薄化半導體工件的系統 |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP1799446A4 (de) |
| JP (1) | JP2008511141A (de) |
| KR (2) | KR20070051337A (de) |
| CN (1) | CN102790000B (de) |
| AT (1) | AT10874U1 (de) |
| DE (1) | DE212005000047U1 (de) |
| TW (2) | TWI463527B (de) |
| WO (1) | WO2006023753A2 (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG147330A1 (en) | 2007-04-19 | 2008-11-28 | Micron Technology Inc | Semiconductor workpiece carriers and methods for processing semiconductor workpieces |
| US7989318B2 (en) * | 2008-12-08 | 2011-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for stacking semiconductor dies |
| DE102009037281B4 (de) * | 2009-08-12 | 2013-05-08 | Siltronic Ag | Verfahren zur Herstellung einer polierten Halbleiterscheibe |
| NL2014625B1 (en) * | 2015-04-13 | 2017-01-06 | Suss Microtec Lithography Gmbh | Wafer treating device and sealing ring for a wafer treating device. |
| DE102019110402A1 (de) | 2018-05-25 | 2019-11-28 | Infineon Technologies Ag | Ein Verfahren zum Bearbeiten eines Halbleiterwafers, eine Halbleiter-Verbundstruktur und eine Stützstruktur für einen Halbleiterwafer |
| JP7136679B2 (ja) * | 2018-12-13 | 2022-09-13 | 株式会社荏原製作所 | 基板ホルダに使用するシール |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6402843B1 (en) * | 1999-12-07 | 2002-06-11 | Trusi Technologies, Llc | Non-contact workpiece holder |
| TW200414976A (en) * | 2002-12-20 | 2004-08-16 | Infineon Technologies Ag | Method of processing a workpiece, and a work carrier, in particular of porous ceramic |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL162254B (nl) * | 1968-11-29 | 1979-11-15 | Philips Nv | Halfgeleiderinrichting voor het omzetten van mechanische spanningen in elektrische signalen en werkwijze voor het vervaardigen daarvan. |
| US4266334A (en) * | 1979-07-25 | 1981-05-12 | Rca Corporation | Manufacture of thinned substrate imagers |
| US5011782A (en) * | 1989-03-31 | 1991-04-30 | Electric Power Research Institute | Method of making passivated antireflective coating for photovoltaic cell |
| JPH0684731A (ja) * | 1992-09-07 | 1994-03-25 | Nec Kyushu Ltd | 半導体ウェハー |
| JP3161515B2 (ja) * | 1997-10-08 | 2001-04-25 | 三菱マテリアル株式会社 | 半導体装置の製造方法 |
| US6613681B1 (en) * | 1998-08-28 | 2003-09-02 | Micron Technology, Inc. | Method of removing etch residues |
| US6248222B1 (en) * | 1998-09-08 | 2001-06-19 | Acm Research, Inc. | Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces |
| US6162702A (en) * | 1999-06-17 | 2000-12-19 | Intersil Corporation | Self-supported ultra thin silicon wafer process |
| US6334453B1 (en) * | 2000-02-14 | 2002-01-01 | Semitool, Inc. | Seal configuration for use with a motor drive assembly in a microelectronic workpiece processing system |
| WO2002047139A2 (en) * | 2000-12-04 | 2002-06-13 | Ebara Corporation | Methode of forming a copper film on a substrate |
| JP3899871B2 (ja) * | 2001-08-23 | 2007-03-28 | 株式会社デンソー | エッチング方法及びエッチング装置並びに薄膜センサの製造方法 |
| JP3620528B2 (ja) * | 2001-12-12 | 2005-02-16 | 株式会社デンソー | 半導体装置の製造方法 |
| DE10256985B4 (de) * | 2001-12-12 | 2013-01-10 | Denso Corporation | Verfahren zur Herstellung eines Leistungshalbleiterbauelements |
| JP4185704B2 (ja) * | 2002-05-15 | 2008-11-26 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| US20040074808A1 (en) * | 2002-07-05 | 2004-04-22 | Entegris, Inc. | Fire retardant wafer carrier |
| US6940181B2 (en) * | 2003-10-21 | 2005-09-06 | Micron Technology, Inc. | Thinned, strengthened semiconductor substrates and packages including same |
| US20050239295A1 (en) * | 2004-04-27 | 2005-10-27 | Wang Pei-L | Chemical treatment of material surfaces |
-
2005
- 2005-08-18 KR KR1020077006237A patent/KR20070051337A/ko not_active Application Discontinuation
- 2005-08-18 CN CN201210101297.1A patent/CN102790000B/zh not_active Expired - Fee Related
- 2005-08-18 KR KR1020077006971A patent/KR20070048793A/ko not_active Application Discontinuation
- 2005-08-18 AT AT0900405U patent/AT10874U1/de not_active IP Right Cessation
- 2005-08-18 EP EP05789099A patent/EP1799446A4/de not_active Ceased
- 2005-08-18 JP JP2007528050A patent/JP2008511141A/ja active Pending
- 2005-08-18 WO PCT/US2005/029598 patent/WO2006023753A2/en active Application Filing
- 2005-08-18 DE DE212005000047U patent/DE212005000047U1/de not_active Expired - Lifetime
- 2005-08-19 TW TW094128423A patent/TWI463527B/zh not_active IP Right Cessation
- 2005-08-19 TW TW101109367A patent/TWI502620B/zh not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6402843B1 (en) * | 1999-12-07 | 2002-06-11 | Trusi Technologies, Llc | Non-contact workpiece holder |
| TW200414976A (en) * | 2002-12-20 | 2004-08-16 | Infineon Technologies Ag | Method of processing a workpiece, and a work carrier, in particular of porous ceramic |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI463527B (zh) | 2014-12-01 |
| WO2006023753A3 (en) | 2009-06-25 |
| WO2006023753A2 (en) | 2006-03-02 |
| KR20070051337A (ko) | 2007-05-17 |
| TW200614329A (en) | 2006-05-01 |
| CN102790000B (zh) | 2016-06-29 |
| DE212005000047U1 (de) | 2007-08-02 |
| EP1799446A4 (de) | 2010-03-03 |
| EP1799446A2 (de) | 2007-06-27 |
| TW201230144A (en) | 2012-07-16 |
| JP2008511141A (ja) | 2008-04-10 |
| AT10874U1 (de) | 2009-11-15 |
| CN102790000A (zh) | 2012-11-21 |
| KR20070048793A (ko) | 2007-05-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
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