EP1799446A4 - System zum verdünnen eines halbleiterwerkstücks - Google Patents
System zum verdünnen eines halbleiterwerkstücksInfo
- Publication number
- EP1799446A4 EP1799446A4 EP05789099A EP05789099A EP1799446A4 EP 1799446 A4 EP1799446 A4 EP 1799446A4 EP 05789099 A EP05789099 A EP 05789099A EP 05789099 A EP05789099 A EP 05789099A EP 1799446 A4 EP1799446 A4 EP 1799446A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- thinning
- semiconductor workpiece
- workpiece
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02035—Shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Weting (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/923,132 US7354649B2 (en) | 2004-08-20 | 2004-08-20 | Semiconductor workpiece |
US10/923,363 US7288489B2 (en) | 2004-08-20 | 2004-08-20 | Process for thinning a semiconductor workpiece |
US10/922,762 US20060040111A1 (en) | 2004-08-20 | 2004-08-20 | Process chamber and system for thinning a semiconductor workpiece |
US10/923,436 US20060046499A1 (en) | 2004-08-20 | 2004-08-20 | Apparatus for use in thinning a semiconductor workpiece |
PCT/US2005/029598 WO2006023753A2 (en) | 2004-08-20 | 2005-08-18 | System for thinning a semiconductor workpiece |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1799446A2 EP1799446A2 (de) | 2007-06-27 |
EP1799446A4 true EP1799446A4 (de) | 2010-03-03 |
Family
ID=35968220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP05789099A Ceased EP1799446A4 (de) | 2004-08-20 | 2005-08-18 | System zum verdünnen eines halbleiterwerkstücks |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP1799446A4 (de) |
JP (1) | JP2008511141A (de) |
KR (2) | KR20070051337A (de) |
CN (1) | CN102790000B (de) |
AT (1) | AT10874U1 (de) |
DE (1) | DE212005000047U1 (de) |
TW (2) | TWI502620B (de) |
WO (1) | WO2006023753A2 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG147330A1 (en) | 2007-04-19 | 2008-11-28 | Micron Technology Inc | Semiconductor workpiece carriers and methods for processing semiconductor workpieces |
US7989318B2 (en) * | 2008-12-08 | 2011-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for stacking semiconductor dies |
DE102009037281B4 (de) * | 2009-08-12 | 2013-05-08 | Siltronic Ag | Verfahren zur Herstellung einer polierten Halbleiterscheibe |
NL2014625B1 (en) * | 2015-04-13 | 2017-01-06 | Suss Microtec Lithography Gmbh | Wafer treating device and sealing ring for a wafer treating device. |
DE102019110402A1 (de) | 2018-05-25 | 2019-11-28 | Infineon Technologies Ag | Ein Verfahren zum Bearbeiten eines Halbleiterwafers, eine Halbleiter-Verbundstruktur und eine Stützstruktur für einen Halbleiterwafer |
JP7136679B2 (ja) * | 2018-12-13 | 2022-09-13 | 株式会社荏原製作所 | 基板ホルダに使用するシール |
WO2024204563A1 (ja) * | 2023-03-30 | 2024-10-03 | ローム株式会社 | 半導体装置の製造方法およびウエハ支持構造 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2024961A1 (de) * | 1968-11-29 | 1970-09-04 | Philips Nv | |
US4266334A (en) * | 1979-07-25 | 1981-05-12 | Rca Corporation | Manufacture of thinned substrate imagers |
JPH0684731A (ja) * | 1992-09-07 | 1994-03-25 | Nec Kyushu Ltd | 半導体ウェハー |
EP1061584A2 (de) * | 1999-06-17 | 2000-12-20 | Intersil Corporation | Verfahren zur Herstellung eines selbsttragenden ultradünnen Siliziumwafer |
US20030119281A1 (en) * | 2001-12-12 | 2003-06-26 | Mikimasa Suzuki | Method for manufacturing semiconductor power device |
US20030215985A1 (en) * | 2002-05-15 | 2003-11-20 | Hitachi, Ltd. | Semiconductor wafer and manufacturing method of semiconductor device |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5011782A (en) * | 1989-03-31 | 1991-04-30 | Electric Power Research Institute | Method of making passivated antireflective coating for photovoltaic cell |
JP3161515B2 (ja) * | 1997-10-08 | 2001-04-25 | 三菱マテリアル株式会社 | 半導体装置の製造方法 |
US6613681B1 (en) * | 1998-08-28 | 2003-09-02 | Micron Technology, Inc. | Method of removing etch residues |
US6248222B1 (en) * | 1998-09-08 | 2001-06-19 | Acm Research, Inc. | Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces |
US6402843B1 (en) * | 1999-12-07 | 2002-06-11 | Trusi Technologies, Llc | Non-contact workpiece holder |
US6334453B1 (en) * | 2000-02-14 | 2002-01-01 | Semitool, Inc. | Seal configuration for use with a motor drive assembly in a microelectronic workpiece processing system |
WO2002047139A2 (en) * | 2000-12-04 | 2002-06-13 | Ebara Corporation | Methode of forming a copper film on a substrate |
JP3899871B2 (ja) * | 2001-08-23 | 2007-03-28 | 株式会社デンソー | エッチング方法及びエッチング装置並びに薄膜センサの製造方法 |
JP3620528B2 (ja) * | 2001-12-12 | 2005-02-16 | 株式会社デンソー | 半導体装置の製造方法 |
US20040074808A1 (en) * | 2002-07-05 | 2004-04-22 | Entegris, Inc. | Fire retardant wafer carrier |
DE10260233B4 (de) * | 2002-12-20 | 2016-05-19 | Infineon Technologies Ag | Verfahren zum Befestigen eines Werkstücks mit einem Feststoff an einem Werkstückträger und Werkstückträger |
US6940181B2 (en) * | 2003-10-21 | 2005-09-06 | Micron Technology, Inc. | Thinned, strengthened semiconductor substrates and packages including same |
US20050239295A1 (en) * | 2004-04-27 | 2005-10-27 | Wang Pei-L | Chemical treatment of material surfaces |
-
2005
- 2005-08-18 WO PCT/US2005/029598 patent/WO2006023753A2/en active Application Filing
- 2005-08-18 CN CN201210101297.1A patent/CN102790000B/zh not_active Expired - Fee Related
- 2005-08-18 KR KR1020077006237A patent/KR20070051337A/ko not_active Application Discontinuation
- 2005-08-18 KR KR1020077006971A patent/KR20070048793A/ko not_active Application Discontinuation
- 2005-08-18 EP EP05789099A patent/EP1799446A4/de not_active Ceased
- 2005-08-18 JP JP2007528050A patent/JP2008511141A/ja active Pending
- 2005-08-18 DE DE212005000047U patent/DE212005000047U1/de not_active Expired - Lifetime
- 2005-08-18 AT AT0900405U patent/AT10874U1/de not_active IP Right Cessation
- 2005-08-19 TW TW101109367A patent/TWI502620B/zh not_active IP Right Cessation
- 2005-08-19 TW TW094128423A patent/TWI463527B/zh not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2024961A1 (de) * | 1968-11-29 | 1970-09-04 | Philips Nv | |
US4266334A (en) * | 1979-07-25 | 1981-05-12 | Rca Corporation | Manufacture of thinned substrate imagers |
JPH0684731A (ja) * | 1992-09-07 | 1994-03-25 | Nec Kyushu Ltd | 半導体ウェハー |
EP1061584A2 (de) * | 1999-06-17 | 2000-12-20 | Intersil Corporation | Verfahren zur Herstellung eines selbsttragenden ultradünnen Siliziumwafer |
US20030119281A1 (en) * | 2001-12-12 | 2003-06-26 | Mikimasa Suzuki | Method for manufacturing semiconductor power device |
US20030215985A1 (en) * | 2002-05-15 | 2003-11-20 | Hitachi, Ltd. | Semiconductor wafer and manufacturing method of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
TWI502620B (zh) | 2015-10-01 |
TW200614329A (en) | 2006-05-01 |
JP2008511141A (ja) | 2008-04-10 |
WO2006023753A3 (en) | 2009-06-25 |
CN102790000A (zh) | 2012-11-21 |
TW201230144A (en) | 2012-07-16 |
KR20070051337A (ko) | 2007-05-17 |
CN102790000B (zh) | 2016-06-29 |
KR20070048793A (ko) | 2007-05-09 |
TWI463527B (zh) | 2014-12-01 |
EP1799446A2 (de) | 2007-06-27 |
DE212005000047U1 (de) | 2007-08-02 |
WO2006023753A2 (en) | 2006-03-02 |
AT10874U1 (de) | 2009-11-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20070316 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL BA HR MK YU |
|
DAX | Request for extension of the european patent (deleted) | ||
R17D | Deferred search report published (corrected) |
Effective date: 20090625 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: B32B 13/04 20060101ALI20090702BHEP Ipc: B32B 9/04 20060101ALI20090702BHEP Ipc: H01L 21/461 20060101ALI20090702BHEP Ipc: H01L 21/302 20060101ALI20090702BHEP Ipc: H01L 21/36 20060101ALI20090702BHEP Ipc: C23F 1/00 20060101AFI20090702BHEP |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20100122 |
|
RA4 | Supplementary search report drawn up and despatched (corrected) |
Effective date: 20100129 |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: APPLIED MATERIALS, INC. |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R003 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED |
|
18R | Application refused |
Effective date: 20140227 |