TWI488317B - 光電轉換裝置及光電轉換裝置的製造方法 - Google Patents

光電轉換裝置及光電轉換裝置的製造方法 Download PDF

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Publication number
TWI488317B
TWI488317B TW098139926A TW98139926A TWI488317B TW I488317 B TWI488317 B TW I488317B TW 098139926 A TW098139926 A TW 098139926A TW 98139926 A TW98139926 A TW 98139926A TW I488317 B TWI488317 B TW I488317B
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TW
Taiwan
Prior art keywords
semiconductor
semiconductor layer
impurity
electrode
photoelectric conversion
Prior art date
Application number
TW098139926A
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English (en)
Chinese (zh)
Other versions
TW201036181A (en
Inventor
Satoshi Toriumi
Toshiya Endo
Eriko Ohmori
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Semiconductor Energy Lab
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Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of TW201036181A publication Critical patent/TW201036181A/zh
Application granted granted Critical
Publication of TWI488317B publication Critical patent/TWI488317B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
TW098139926A 2008-11-28 2009-11-24 光電轉換裝置及光電轉換裝置的製造方法 TWI488317B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008303441 2008-11-28

Publications (2)

Publication Number Publication Date
TW201036181A TW201036181A (en) 2010-10-01
TWI488317B true TWI488317B (zh) 2015-06-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW098139926A TWI488317B (zh) 2008-11-28 2009-11-24 光電轉換裝置及光電轉換裝置的製造方法

Country Status (4)

Country Link
US (1) US20100139766A1 (https=)
JP (1) JP5503946B2 (https=)
CN (1) CN101752433B (https=)
TW (1) TWI488317B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8704083B2 (en) 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
US9076909B2 (en) * 2010-06-18 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
US9159939B2 (en) * 2011-07-21 2015-10-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JP5933495B2 (ja) * 2012-09-28 2016-06-08 富士フイルム株式会社 有機電界発光素子及び有機電界発光素子の製造方法
JP6702190B2 (ja) * 2014-08-21 2020-05-27 ソニー株式会社 撮像素子及び固体撮像装置
JP6139731B2 (ja) * 2016-03-23 2017-05-31 株式会社半導体エネルギー研究所 光電変換装置の作製方法
CN108987522A (zh) * 2018-07-25 2018-12-11 京东方科技集团股份有限公司 一种光电传感器、光电传感组件及其制作方法
CN113860410B (zh) * 2021-09-30 2022-06-10 海南大学 一种全角度太阳能高效驱动水蒸发仿生材料及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI273719B (en) * 2005-12-30 2007-02-11 Ind Tech Res Inst Nanocrystal and photovoltaics applying the same
TWM323112U (en) * 2006-12-28 2007-12-01 Advance Design Technology Inc Thin film solar-cell with multi level microcrystalline silicon
KR100861548B1 (ko) * 2007-04-27 2008-10-02 엘지전자 주식회사 박막형 태양전지와 그의 제조방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4878097A (en) * 1984-05-15 1989-10-31 Eastman Kodak Company Semiconductor photoelectric conversion device and method for making same
US6413805B1 (en) * 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
US5677236A (en) * 1995-02-24 1997-10-14 Mitsui Toatsu Chemicals, Inc. Process for forming a thin microcrystalline silicon semiconductor film
US6472248B2 (en) * 1999-07-04 2002-10-29 Canon Kabushiki Kaisha Microcrystalline series photovoltaic element and process for fabrication of same
US6204156B1 (en) * 1999-09-02 2001-03-20 Micron Technology, Inc. Method to fabricate an intrinsic polycrystalline silicon film
US6858308B2 (en) * 2001-03-12 2005-02-22 Canon Kabushiki Kaisha Semiconductor element, and method of forming silicon-based film
TW555690B (en) * 2001-08-14 2003-10-01 Jsr Corp Silane composition, silicon film forming method and solar cell production method
JP4240984B2 (ja) * 2002-10-08 2009-03-18 三洋電機株式会社 光電変換装置
US20050236030A1 (en) * 2003-11-27 2005-10-27 Kyocera Corporation Photoelectric conversion device and method for manufacturing the same
US8049103B2 (en) * 2006-01-18 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN101043058A (zh) * 2006-03-20 2007-09-26 上海太阳能科技有限公司 非晶硅－晶体硅异质结太阳电池
US8278739B2 (en) * 2006-03-20 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof
TW200832714A (en) * 2007-01-29 2008-08-01 Innolux Display Corp Fabricating method for low temperatyue polysilicon thin film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI273719B (en) * 2005-12-30 2007-02-11 Ind Tech Res Inst Nanocrystal and photovoltaics applying the same
TWM323112U (en) * 2006-12-28 2007-12-01 Advance Design Technology Inc Thin film solar-cell with multi level microcrystalline silicon
KR100861548B1 (ko) * 2007-04-27 2008-10-02 엘지전자 주식회사 박막형 태양전지와 그의 제조방법

Also Published As

Publication number Publication date
TW201036181A (en) 2010-10-01
CN101752433A (zh) 2010-06-23
JP5503946B2 (ja) 2014-05-28
CN101752433B (zh) 2013-11-20
US20100139766A1 (en) 2010-06-10
JP2010153827A (ja) 2010-07-08

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