TWI482251B - Lead frame and method of manufacturing - Google Patents
Lead frame and method of manufacturing Download PDFInfo
- Publication number
- TWI482251B TWI482251B TW098123215A TW98123215A TWI482251B TW I482251 B TWI482251 B TW I482251B TW 098123215 A TW098123215 A TW 098123215A TW 98123215 A TW98123215 A TW 98123215A TW I482251 B TWI482251 B TW I482251B
- Authority
- TW
- Taiwan
- Prior art keywords
- resin
- lead frame
- wires
- wire
- boundary
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49558—Insulating layers on lead frames, e.g. bridging members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Description
本發明是關於裝配樹脂密封型半導體裝置的構件的導線架及其製造方法以及使用它的半導體裝置。The present invention relates to a lead frame for assembling a member of a resin-sealed type semiconductor device, a method of manufacturing the same, and a semiconductor device using the same.
例如第7圖所示地，樹脂密封型半導體裝置是在導線架的晶片銲墊1上裝載半導體元件11，而以線13接線施以鍍銀等表面處理的內導線2前端部與半導體元件11的端子12，以密封用樹脂14進行密封，然後，將外導線4成形成海鷗式機翼狀。如第8圖所示地，利用上述密封用樹脂14的密封，是以金屬模(上)21與金屬模(下)22夾住裝載半導體元件的導線架，而在兩金屬模間的空隙藉由注入密封用樹脂所進行。這時候，為了樹脂不會從導線間的間隙漏出的方式，如第9圖所示地，在導線架有填補導線間的間隙的堵住桿3設於外導線部。For example, as shown in FIG. 7, the resin-sealed type semiconductor device is provided with the semiconductor element 11 on the wafer pad 1 of the lead frame, and the front end portion of the inner lead 2 and the semiconductor element 11 which are surface-treated by silver plating or the like is applied by the wire 13. The terminal 12 is sealed with a sealing resin 14, and then the outer lead 4 is formed into a seagull-like wing shape. As shown in Fig. 8, the sealing of the sealing resin 14 is carried out by sandwiching the lead frame on which the semiconductor element is mounted by the metal mold (upper) 21 and the metal mold (lower) 22, and borrowing from the gap between the two metal molds. It is carried out by injecting a resin for sealing. At this time, in order to prevent the resin from leaking from the gap between the wires, as shown in Fig. 9, the blocking rod 3 having the gap between the wires in the lead frame is provided in the outer lead portion.
傳統上，以金屬薄板，藉由壓機加工或蝕刻加工同時地形成有外導線、內導線及堵住桿，而堵住桿是利用與外導線同一金屬原材料所形成。所以，密封樹脂之後，以沖孔等處理切斷分離堵住桿之後，需要解除電性地短路狀態的工序。Conventionally, an outer wire, an inner wire, and a plug rod are simultaneously formed by a metal sheet by press processing or etching, and the plug is formed by using the same metal material as the outer wire. Therefore, after the resin is sealed, the process of cutting off the plugging rod by punching or the like is performed, and then the step of electrically short-circuiting is required.
近年來，導線架是有如針腳化及狹窄間距化的趨勢，而有為了沖孔堵住桿的衝孔金屬模的加工或維修的經費上有增加的趨勢。如此，可省略密封樹脂後的堵住桿切斷分離工序的方式，以絕緣性樹脂形成堵住桿的方法，被提案在日本專利第2970066號(專利文獻1)，日本特開平9-283691號(專利文獻2)，日本特開平11-233704號(專利文獻3)。In recent years, the lead frame has a tendency to be pinned and narrowly spaced, and there is an increasing trend in the processing or maintenance of the punching metal mold for punching the rod. In this way, the method of blocking the rod cutting and separating step after the sealing resin can be omitted, and the method of forming the plugging rod with the insulating resin is proposed in Japanese Patent No. 2970066 (Patent Document 1), Japanese Patent Laid-Open No. Hei 9-283691 (Patent Document 2) Japanese Patent Laid-Open No. Hei 11-233704 (Patent Document 3).
專利文獻Patent literature
專利文獻1：日本專利第2970066號公報Patent Document 1: Japanese Patent No. 2970066
專利文獻2：日本特開平9-283691號公報Patent Document 2: Japanese Patent Laid-Open No. Hei 9-283691
專利文獻3：日本特開平11-233704號公報Patent Document 3: Japanese Laid-Open Patent Publication No. 11-233704
然而，在上述專利文獻所提案的樹脂製堵住桿的形成方法，是壓入於導線間的方法(專利文獻1)，橫跨外導線的方式塗佈熱硬化性樹脂，然後加熱加壓而填充於導線間的方法(專利文獻2)，使用罩幕等以印刷方式塗料密封方法(專利文獻3)，惟為了多針腳化，在壓入於導線間的方法(專利文獻1)或是使用罩幕的方法(專利文獻3)，使成本過高而不實用。又，橫跨外導線的方式將樹脂塗佈於導線架表面的情形(專利文獻2)，而在導線架表背面留下樹脂，為了以密封用樹脂進行密封，而在以金屬模夾住關閉時使得導線架變形，或是在金屬模與導線架之間產生間隙而有產生樹脂洩漏的情形。However, the method for forming a resin plugging rod proposed in the above-mentioned patent document is a method of press-fitting between the wires (Patent Document 1), applying a thermosetting resin so as to straddle the outer lead wires, and then heating and pressurizing A method of filling between the wires (Patent Document 2) uses a coating method such as a cover film coating method (Patent Document 3), but a method of pressing between the wires (Patent Document 1) or using it for multi-pinning. The method of the mask (Patent Document 3) makes the cost too high and is not practical. Further, in the case where the resin is applied to the surface of the lead frame across the outer lead (Patent Document 2), the resin is left on the back surface of the lead frame, and the sealing is performed with the sealing resin, and the metal mold is closed. This causes the lead frame to be deformed, or a gap is formed between the metal mold and the lead frame to cause a resin leakage.
本發明是在此種狀況下所創作者，其目的是在於低成本地提供依密封用樹脂所致的半導體裝置的密封之際，不會產生導線架或半導體裝置的變形或樹脂洩漏，密封後可省略堵住桿切斷去除工序的導線架或半導體裝置。The present invention has been made in such a situation, and the object thereof is to provide a sealing of a semiconductor device by a sealing resin at a low cost without causing deformation of a lead frame or a semiconductor device or resin leakage, and after sealing The lead frame or the semiconductor device that blocks the rod cutting and removing process can be omitted.
本發明的第一項發明，是一種導線架，屬於具有複數外導線，及複數內導線，而在上述外導線與上述內導線的交界具有絕緣性樹脂製的堵住桿的導線架，其特徵為：上述絕緣性樹脂，是在硬化完成前沿著導線側壁可移動在內導線間的熱硬化樹脂或紫外線硬化樹脂，上述內導線的間隔，是在上述堵住桿近旁愈接近塗布樹脂液停止移動位置愈狹窄，而且，上述外導線的間隔，是在上述堵住桿近旁成為比位於上述堵住桿的導線間隔還要寬廣，絕緣樹脂製之上述堵住桿是以下述方式形成，即，在上述內導線區域的導線架表面或背面塗布絕緣性的熱硬化性樹脂或紫外線硬化樹脂之樹脂液，並使流入導線間的間隙之塗布樹脂液，順著導線側壁朝外導線與內導線的交界方向移動，而樹脂液之移動停止於前述塗布樹脂液停止移動位置，其後使樹脂液硬化。The first invention of the present invention is a lead frame, which is a lead frame having a plurality of outer wires and a plurality of inner wires, and having an insulating resin plugging rod at the boundary between the outer wires and the inner wires, The insulating resin is a thermosetting resin or an ultraviolet curing resin which is movable between the inner wires along the side wall of the wire before the hardening is completed, and the interval between the inner wires is closer to the coating resin liquid in the vicinity of the blocking rod. The narrower the position, the spacing of the outer wires is wider than the spacing of the wires located in the blocking rods, and the blocking rod made of insulating resin is formed in the following manner, that is, Applying an insulating thermosetting resin or a resin liquid of an ultraviolet curable resin to the surface or the back surface of the lead frame in the inner lead region, and applying a resin liquid flowing into a gap between the wires, along the side wall of the lead toward the boundary between the outer lead and the inner lead The direction moves, and the movement of the resin liquid stops at the position where the coating resin liquid stops moving, and thereafter the resin liquid is hardened.
本發明的第二項發明是一種半導體裝置，屬於在上述第1項發明的導線架上裝載半導體元件，接線上述內導線與上述半導體元件的端子，而以密封用樹脂進行密封所成的半導體裝置，其特徵為：上述絕緣樹脂製堵住桿是位於形成有密封用樹脂的部分與未形成的部分的交界線即模塑密封線上。According to a second aspect of the invention, there is provided a semiconductor device comprising the semiconductor device in which the semiconductor element is mounted on the lead frame of the first aspect of the invention, and the terminal of the inner lead and the semiconductor element are connected, and sealed by a sealing resin. It is characterized in that the insulating resin stopper rod is a molding seal line which is a boundary line between a portion where the sealing resin is formed and an unformed portion.
本發明的第三項發明是一種導線架的製造方法，其特徵為：具有複數外導線，及複數內導線，而加工金屬薄板以形成未具有堵住桿的無堵住桿導線架，在內導線區域的導線架表面或背面塗佈絕緣性的熱硬化性樹脂或是紫外線硬化樹脂的樹脂液， 將流進導線間的間隙的塗佈樹脂液沿著導線側壁而朝著外導線與內導線之交界方向移動，然後，將塗佈樹脂予以硬化而在模塑密封線上形成樹脂製堵住桿。A third invention of the present invention is a method of manufacturing a lead frame, which is characterized in that: a plurality of outer conductors and a plurality of inner conductors are processed, and the metal foil is processed to form a non-blocking pole lead frame without a blocking rod. An insulating thermosetting resin or a resin liquid of an ultraviolet curing resin is applied to the surface or the back surface of the lead frame of the wire region. The coating resin liquid flowing into the gap between the wires is moved along the side wall of the wire toward the boundary between the outer wire and the inner wire, and then the coating resin is hardened to form a resin plugging rod on the molding sealing line.
在上述本發明的第三發明中，塗佈樹脂液的移動方法，藉由內導線間隔愈接近外導線與內導線的交界方向愈狹窄，使得樹脂液沿著導線側壁朝上述交界方向移動。藉由將外導線間隔在比塗佈樹脂液移動停止位置還位於外側作成寬廣，而停止上述塗佈樹脂液的移動的方法較適當。In the third invention of the present invention, the method of moving the coating resin liquid is such that the closer the inner wire spacing is to the closer the boundary direction between the outer wire and the inner wire, the resin liquid moves toward the boundary direction along the wire side wall. The method of stopping the movement of the coating resin liquid by appropriately widening the outer lead wire at a position other than the coating resin liquid movement stop position is suitable.
在本發明中，堵住桿是絕緣性樹脂之故，因而以密封用樹脂進行密封半導體裝置之後，並不需要切斷去除堵住桿。又，樹脂製堵住桿是利用塗佈法所形成之故，因而低成本。又，將樹脂液塗佈於外導線區域，沿著導線間的側壁移動至內導線與外導線的交界之後，藉由形成堵住桿之故，因而在堵住桿近旁樹脂不會殘留於導線架的表背面，而為了密封，當關閉金屬模時，不會有導線架變形成產生間隔而也不會產生樹脂洩漏。In the present invention, since the plugging rod is an insulating resin, it is not necessary to cut and remove the plugging rod after sealing the semiconductor device with the sealing resin. Further, since the resin plugging rod is formed by a coating method, it is low in cost. Further, after the resin liquid is applied to the outer lead region and moved along the side wall between the wires to the boundary between the inner lead and the outer lead, the plug is blocked, so that the resin does not remain in the lead near the rod. The back side of the frame, and for sealing, when the metal mold is closed, there is no gap between the lead frames and no resin leakage.
又，在本發明中，內導線間隔為在堵住桿位置，亦即橫跨內導線與外導線之交界位置變狹窄，而由導線架表面觀看，則內導線間隔的形狀是成為台形。所以，堵住桿的樹脂形狀是成為台形，而在硬化時，即使堵住桿的樹脂稍收縮，也藉由壓入密封用樹脂時的壓力可防止樹脂製堵住桿脫落的情形。Further, in the present invention, the inner wire spacing is narrowed at the position where the rod is blocked, that is, the boundary between the inner wire and the outer wire is narrowed, and when viewed from the surface of the lead frame, the shape of the inner wire spacing is a table shape. Therefore, the shape of the resin that blocks the rod is a table shape, and even if the resin that blocks the rod is slightly shrunk during hardening, the pressure at which the resin is pressed into the sealing resin can prevent the resin from blocking the rod from falling off.
又，利用形成堵住桿的樹脂硬化之際所產生的收縮，將樹脂製堵住桿的中央位置比導線架表背面的高度位置稍低，而在密封之際的金屬模與堵住桿之間作成些微間隙，也可使得樹脂製堵住桿兼具從密封用樹脂所發生的氣體的 洩氣口(漏口)的作用。Further, by the shrinkage generated when the resin forming the plugging rod is hardened, the central position of the resin blocking rod is slightly lower than the height position of the back surface of the lead frame, and the metal mold and the blocking rod are sealed at the time of sealing. Making a slight gap between the two can also make the resin block the rod and the gas generated from the sealing resin. The role of the venting port (leakage).
又，在本發明的第二發明中，堵住桿上的一部分成為以密封用樹脂所覆蓋之故，因而可防止樹脂製堵住桿的剝離或脫落。Further, in the second invention of the present invention, a part of the rod is blocked by the sealing resin, so that peeling or falling off of the rod can be prevented by the resin.
以下，針對於本發明的實施形態，使用圖式加以說明。Hereinafter, embodiments of the present invention will be described using the drawings.
在本發明中，首先，將銅合金，鎳-鐵合金等的金屬薄板施以壓機加工或蝕刻加工，以形成未具有堵住桿的無堵住桿的導線架圖案。在第1圖表示本發明的導線架的概觀圖。在本發明中，在內導線2與外導線4之間的模塑密封線34的位置，設有絕緣性樹脂製堵住桿33。In the present invention, first, a metal thin plate of a copper alloy, a nickel-iron alloy or the like is subjected to press processing or etching processing to form a lead frame pattern without a plugging rod without blocking the rod. Fig. 1 is a schematic view showing a lead frame of the present invention. In the present invention, the position of the molded seal line 34 between the inner lead 2 and the outer lead 4 is provided with an insulating resin to block the rod 33.
在第2圖表示在本發明所使用的無堵住桿導線架的外導線與內導線的交界附近的擴大圖。在上述交界附近，內導線間隔W1是朝著上述交界變狹窄，當超過上述交界而進入到外導線區域，則外導線間隔W2變寬廣。導線架的板厚是0.1~0.2mm，較佳為0.1~0.15mm。外導線間距，一般是0.5mm，而外導線間隔一般為0.2~0.3mm。又，導線間隔變狹窄的比率(錐度)，是每長度10000μm(1mm)為5~60μm較佳，更佳為10~50μm，最佳為10~40μm。若錐度過小，則堵住桿形成用樹脂的塗佈液的移動量變小而不理想。又，外導線的間隔成為比在上述交界的導線間隔還要寬廣。Fig. 2 is an enlarged view showing the vicinity of the boundary between the outer conductor and the inner conductor of the non-blocking pole lead frame used in the present invention. In the vicinity of the above-mentioned boundary, the inner wire spacing W1 is narrowed toward the above-mentioned boundary, and when it enters the outer wire region beyond the boundary, the outer wire spacing W2 becomes wider. The thickness of the lead frame is 0.1 to 0.2 mm, preferably 0.1 to 0.15 mm. The outer conductor spacing is generally 0.5 mm, while the outer conductor spacing is generally 0.2 to 0.3 mm. Further, the ratio (taper) at which the wire spacing becomes narrow is preferably 50,000 μm (1 mm) per length of 5 to 60 μm, more preferably 10 to 50 μm, and most preferably 10 to 40 μm. When the taper is too small, the amount of movement of the coating liquid that blocks the rod-forming resin becomes small, which is not preferable. Moreover, the spacing of the outer conductors is wider than the spacing of the conductors at the junction.
在導線架的內導線的前端部分的導線表面；一般容易打線接合的方式，藉由點鍍或環形鍍等手段，施以銀或金等的鍍處理。The surface of the wire at the front end portion of the inner wire of the lead frame; generally, the wire bonding method is easily performed, and plating treatment such as silver or gold is applied by means of spot plating or ring plating.
以下說明堵住桿的形成方法。在內導線區域當將堵住桿形成用的樹脂液塗佈於塗佈線31(第3a圖)，則所塗佈的樹脂液32藉由表面張力進入導線間(第3b圖)，又，樹脂液32是藉由表面張力沿著導線側壁，朝著導間隔狹窄方向，亦即朝著上述交界方向移動(第3c圖)，而在導線間隔變寬廣的場所停止移動(第3d圖)。在該停止位置，藉由將樹脂予以硬化完成而形成樹脂製堵住桿。又，所塗佈的樹脂液是利用提昇溫度就可降低黏度，而可將在停止位置的移動作成容易。The method of forming the plugging rod will be described below. When the resin liquid for blocking the rod formation is applied to the coating line 31 (Fig. 3a) in the inner lead region, the applied resin liquid 32 enters between the wires by the surface tension (Fig. 3b). The resin liquid 32 is moved in the narrow direction of the guide interval by the surface tension along the side wall of the lead wire, that is, toward the boundary direction (Fig. 3c), and stops moving at a place where the lead interval is widened (Fig. 3d). At the stop position, a resin-blocking rod is formed by hardening the resin. Further, the applied resin liquid can lower the viscosity by raising the temperature, and can easily move at the stop position.
堵住桿形成用的樹脂，是使用著熱硬化性樹脂或紫外線硬化性樹脂，較佳是使用熱硬化性樹脂。作為熱硬化性樹脂，列舉有丙烯系熱硬化性樹脂，聚醯亞胺系熱硬化性樹脂，聚醯胺系熱硬化性樹脂，環氧系熱硬化性樹脂，這些中，以環氧樹脂系熱硬化性樹脂較佳，尤其是由環氧樹脂與潛在性硬化劑所成的一液型環氧樹脂系導線架較佳。塗佈樹脂液時的黏度是4Pa‧s以上60Pa‧s以下較佳。若樹脂液的黏度過高，則塗佈速度變慢，又樹脂液的移動成為不容易而不理想。若樹脂黏度過低，則在塗佈時會產生液垂下等而不容易處理之故，因而不理想。塗佈方法是分配法較佳，尤其是使用螺旋式分配器的分配法容易調整塗佈液量較佳。The resin for forming the rod is a thermosetting resin or an ultraviolet curable resin, and a thermosetting resin is preferably used. Examples of the thermosetting resin include a propylene-based thermosetting resin, a polyimide-based thermosetting resin, a polyamide-based thermosetting resin, and an epoxy-based thermosetting resin. Among these, epoxy resin is used. The thermosetting resin is preferred, and in particular, a one-pack epoxy type lead frame made of an epoxy resin and a latent curing agent is preferred. The viscosity at the time of applying the resin liquid is preferably 4 Pa ‧ or more and 60 Pa ‧ or less. If the viscosity of the resin liquid is too high, the coating speed becomes slow, and the movement of the resin liquid becomes unfavorable. If the viscosity of the resin is too low, liquid hangs or the like at the time of coating, which is not easy to handle, and is not preferable. The coating method is preferably a dispensing method, and in particular, it is preferable to easily adjust the amount of the coating liquid by a dispensing method using a spiral dispenser.
樹脂的硬化方法是使用對應於其樹脂的通常的方法。使用一液型環氧樹脂系熱硬化性樹脂時，在170～200℃加熱15秒鐘至兩分鐘就可使之硬化固定。又，使用熱硬化性樹脂時，則可兼具將移動至停止位置作成容易所用的加熱，及昇過至硬化反應溫度所用的加熱。具體上，在移動至停止移動位置之前(第3c圖)開始加熱，而在促進移動將要到達至停止位置(第3d圖)的時候成為硬化反應溫度較有效率。The hardening method of the resin is to use a usual method corresponding to its resin. When a one-pack epoxy resin-based thermosetting resin is used, it can be hardened and fixed by heating at 170 to 200 ° C for 15 seconds to two minutes. Moreover, when a thermosetting resin is used, the heating which is easy to use for moving to a stop position, and the heating for raising to a hardening reaction temperature can be comprised. Specifically, heating is started before moving to the stop moving position (Fig. 3c), and the hardening reaction temperature is more effective when the promotion of the movement is about to reach the stop position (Fig. 3d).
堵住桿形成用樹脂的塗佈液的移動量，是藉由所塗佈的樹脂液的樹脂液的黏度或內導線間隔，內導線的側面表面狀態等有所不同，惟在導線間隔變狹窄的比率與樹脂移動距離之間，有大約正的相關關係。第4圖是表示在導線的間距間隔為120μm的導線架，塗佈著所塗佈的樹脂液的黏度大約20Pa‧S的堵住桿形成用樹脂液的情形的錐度與樹脂移動量的關係的一例子的圖表。在第4圖的圖表中，在縱軸表示樹脂液的移動量，而在橫軸表示每長度1000μm的導線間隔變狹窄的比率(錐度)。由第4圖可知，在樹脂塗佈液的移動距離與錐度有正的相關關係之故，因而藉由控制導線間隔的錐度，就可控制樹脂塗佈液的移動量，而在所期望的位置可形成樹脂製堵住桿。The amount of movement of the coating liquid for blocking the resin for forming the rod is different depending on the viscosity of the resin liquid of the resin liquid to be applied or the interval between the inner conductors, the side surface state of the inner conductor, and the like, but the interval between the conductors becomes narrow. There is a positive correlation between the ratio of the resin and the distance the resin moves. Fig. 4 is a view showing the relationship between the taper and the amount of movement of the resin in the case where the resin for the rod-forming resin liquid is applied to the lead frame having a pitch of the coating resin of 120 μm and the viscosity of the resin liquid to be applied is about 20 Pa·s. An example of a chart. In the graph of Fig. 4, the vertical axis represents the amount of movement of the resin liquid, and the horizontal axis represents the ratio (taper) at which the interval between the wires of 1000 μm per length becomes narrow. As can be seen from Fig. 4, since the moving distance of the resin coating liquid has a positive correlation with the taper, the amount of movement of the resin coating liquid can be controlled by controlling the taper of the wire spacing, and at the desired position. A resin can be formed to block the rod.
又，如第5圖，第6圖所示地，將導線配置成放射狀，而模塑密封線作成方形狀時，則一直到樹脂塗佈線與堵住桿形成位置為止的距離，在中心部與隅角部不相同。亦即，使得堵住桿的位置作成整齊的方式而為了移動樹脂塗佈液，必須將隅角部的樹脂移動量(Lco)作成比中心部的樹脂移動量(Lce)還要大。此種情形，藉由將隅角部的錐度(Tco)作成比中心部的錐度(Tce)還要大，來控制樹脂塗佈液的移動量就可以。Further, as shown in Fig. 5 and Fig. 6, the wire is arranged in a radial shape, and when the molded sealing wire is formed into a square shape, the distance from the resin coating line to the position at which the rod is formed is at the center. The department is not the same as the corner. In other words, in order to move the resin coating liquid in order to move the resin coating liquid, it is necessary to make the resin movement amount (Lco) of the corner portion larger than the resin movement amount (Lce) of the center portion. In this case, the amount of movement of the resin coating liquid can be controlled by making the taper (Tco) of the corner portion larger than the taper (Tce) of the center portion.
半導體裝置是在如上述地所製造的導線架的所定位置裝載半導體元件。而接線內導線的鍍處理部與半導體元件的端子，然後，如第7圖所示地以密封用金屬模(上模具)21與密封用金屬模(下模具)22夾住導線架，而在金屬模內部注入密封用樹脂，藉由使之固化而被製造。作為密封用樹脂，使用作為半導體裝置的密封用樹脂者都可以使用。例如可例舉由環氧樹脂與氧化鋁或矽化物等的無機填充劑所成的樹脂組成物。在本發明中，不必切斷去除密封後的堵住桿之故，因而作成模塑密封線34成為堵住桿33上的方式，以密封用樹脂來覆蓋堵住桿的一部分較佳。藉由以密封用樹脂覆蓋堵住桿的一部分，可防止堵住桿的剝離、脫落。The semiconductor device mounts the semiconductor element at a predetermined position of the lead frame manufactured as described above. And the plating processing portion of the wiring inside the wiring and the terminal of the semiconductor element, and then, as shown in Fig. 7, the sealing metal mold (upper mold) 21 and the sealing metal mold (lower mold) 22 are sandwiched between the lead frames, and A resin for sealing is injected into the inside of the mold, and it is manufactured by hardening it. As the sealing resin, any sealing resin used as a semiconductor device can be used. For example, a resin composition made of an epoxy resin, an inorganic filler such as alumina or a telluride may be mentioned. In the present invention, it is not necessary to cut off the plugging rod after the sealing, so that the molded sealing wire 34 is formed to block the rod 33, and it is preferable to cover a part of the rod with a sealing resin. By covering a part of the rod with the sealing resin, it is possible to prevent the rod from being peeled off or peeled off.
在本發明中，可省略密封樹脂後的堵住桿切斷去除工序之故，因而低成本地可製造多針腳化且狹窄間距化的樹脂密封型半導體裝置。In the present invention, since the plugging rod cutting and removing step after the sealing resin can be omitted, a resin-sealed type semiconductor device having a plurality of stitches and a narrow pitch can be manufactured at low cost.
1．．．晶片焊墊1. . . Wafer pad
2．．．內導線2. . . Inner wire
3．．．堵住桿3. . . Block the pole
4．．．外導線4. . . Outer wire
11．．．半導體元件11. . . Semiconductor component
12．．．端子12. . . Terminal
13．．．線13. . . line
14．．．密封用樹脂14. . . Sealing resin
21．．．金屬模(上模具)twenty one. . . Metal mold (upper mold)
22．．．金屬模(下模具)twenty two. . . Metal mold (lower mold)
31．．．塗佈線31. . . Coating line
32．．．塗佈樹脂32. . . Coating resin
33．．．樹脂製堵住桿33. . . Resin block rod
34．．．模塑密封線34. . . Molded seal line
第1圖是表示本發明的導線架的全體概觀圖。Fig. 1 is a schematic overall view showing a lead frame of the present invention.
第2圖是表示在本發明的無堵住桿導線架的局部擴大圖。Fig. 2 is a partially enlarged view showing the lead-free lead frame of the present invention.
第3(a)圖至第3(d)圖是表示本發明的製造方法的說明圖。3(a) to 3(d) are explanatory views showing a manufacturing method of the present invention.
第4圖是表示塗佈的樹脂液的移動量與錐度之關係的一例的圖表。Fig. 4 is a graph showing an example of the relationship between the amount of movement of the applied resin liquid and the taper.
第5圖是表示說明隅角部與中心部之樹脂液的移動量不相同所用的說明圖。Fig. 5 is an explanatory view for explaining that the amount of movement of the resin liquid in the corner portion and the center portion is different.
第6圖是表示說明隅角部與中心部之樹脂液的移動量不相同所用的局部圖。Fig. 6 is a partial view showing the difference in the amount of movement of the resin liquid between the corner portion and the center portion.
第7圖是表示樹脂密封型半導體裝置的概略圖。Fig. 7 is a schematic view showing a resin sealed semiconductor device.
第8圖是表示半導體裝置的密封樹脂方法的說明圖。Fig. 8 is an explanatory view showing a method of sealing a resin of a semiconductor device.
第9圖是表示習知的導線架的概略圖。Fig. 9 is a schematic view showing a conventional lead frame.
第10圖是表示半導體裝置的密封樹脂方法的說明圖。Fig. 10 is an explanatory view showing a method of sealing a resin of a semiconductor device.
2．．．內導線2. . . Inner wire
4．．．外導線4. . . Outer wire
33．．．樹脂製堵住桿33. . . Resin block rod
34．．．模塑密封線34. . . Molded seal line
Claims (4)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008180381 | 2008-07-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201021185A TW201021185A (en) | 2010-06-01 |
| TWI482251B true TWI482251B (en) | 2015-04-21 |
Family
ID=41507019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098123215A TWI482251B (en) | 2008-07-10 | 2009-07-09 | Lead frame and method of manufacturing |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5693956B2 (en) |
| KR (1) | KR20110038620A (en) |
| CN (1) | CN102077343B (en) |
| TW (1) | TWI482251B (en) |
| WO (1) | WO2010004903A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050472B (en) * | 2012-12-28 | 2016-04-20 | 日月光封装测试(上海)有限公司 | Semiconductor-sealing-purpose conductive wire frame strip and mould thereof and glue sealing method |
| EP4047063A1 (en) | 2016-03-11 | 2022-08-24 | Dr. Klaus Schepers Patentverwaltung | Use of alkyd resins |
| JP6327732B1 (en) * | 2017-06-22 | 2018-05-23 | 大口マテリアル株式会社 | Lead frame and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0750382A (en) * | 1993-08-05 | 1995-02-21 | Apic Yamada Kk | Lead frame, manufacture thereof, and molding die used therefor |
| US5949132A (en) * | 1995-05-02 | 1999-09-07 | Texas Instruments Incorporated | Dambarless leadframe for molded component encapsulation |
| JP2007109749A (en) * | 2005-10-12 | 2007-04-26 | Shiima Denshi Kk | Lead frame and semiconductor device using the same |
| WO2008075654A1 (en) * | 2006-12-18 | 2008-06-26 | Shiima Electronics Inc. | Lead frame, method for manufacturing the lead frame, and semiconductor device having the lead frame mounted thereon |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08306850A (en) * | 1995-04-28 | 1996-11-22 | Hitachi Ltd | Resin dam type lead frame |
| KR19980015937U (en) * | 1996-09-13 | 1998-06-25 | 구자홍 | Speaker cover fastening structure |
| KR19980073905A (en) * | 1997-03-20 | 1998-11-05 | 이대원 | Lead Frame with Synthetic Resin Dam Bar and Manufacturing Method Thereof |
| JP2005135938A (en) * | 2003-10-28 | 2005-05-26 | Renesas Technology Corp | Semiconductor device and its manufacturing method |
-
2009
- 2009-06-29 CN CN2009801241229A patent/CN102077343B/en not_active Expired - Fee Related
- 2009-06-29 KR KR1020107027954A patent/KR20110038620A/en active IP Right Grant
- 2009-06-29 WO PCT/JP2009/061888 patent/WO2010004903A1/en active Application Filing
- 2009-06-29 JP JP2010519743A patent/JP5693956B2/en not_active Expired - Fee Related
- 2009-07-09 TW TW098123215A patent/TWI482251B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0750382A (en) * | 1993-08-05 | 1995-02-21 | Apic Yamada Kk | Lead frame, manufacture thereof, and molding die used therefor |
| US5949132A (en) * | 1995-05-02 | 1999-09-07 | Texas Instruments Incorporated | Dambarless leadframe for molded component encapsulation |
| JP2007109749A (en) * | 2005-10-12 | 2007-04-26 | Shiima Denshi Kk | Lead frame and semiconductor device using the same |
| WO2008075654A1 (en) * | 2006-12-18 | 2008-06-26 | Shiima Electronics Inc. | Lead frame, method for manufacturing the lead frame, and semiconductor device having the lead frame mounted thereon |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102077343A (en) | 2011-05-25 |
| JP5693956B2 (en) | 2015-04-01 |
| CN102077343B (en) | 2013-05-08 |
| TW201021185A (en) | 2010-06-01 |
| KR20110038620A (en) | 2011-04-14 |
| JPWO2010004903A1 (en) | 2012-01-05 |
| WO2010004903A1 (en) | 2010-01-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8084301B2 (en) | Resin sheet, circuit device and method of manufacturing the same | |
| KR20120021195A (en) | Manufacturing method for resin sealed molded product and manufacturing apparatus for resin sealed molded product | |
| CN108878300B (en) | Package with backside protection layer to prevent mold flash failure during molding | |
| TWI671829B (en) | Manufacturing method of semiconductor device | |
| TWI482251B (en) | Lead frame and method of manufacturing | |
| CN106128965A (en) | A kind of manufacture method of device without substrate package | |
| JP2005268565A (en) | Semiconductor device and manufacturing method thereof | |
| JP6034078B2 (en) | Premold lead frame manufacturing method and semiconductor device manufacturing method | |
| KR102407742B1 (en) | Manufacturing Method of Resin-Molded Lead Frame, Manufacturing Method of Resin-Molded Product and Lead Frame | |
| US20220293434A1 (en) | Semiconductor manufacturing apparatus and method of manufacturing semiconductor device using the same, and semiconductor device | |
| JP2006191143A (en) | Semiconductor device | |
| JP2006073600A (en) | Semiconductor device and manufacturing method thereof | |
| JP5308107B2 (en) | Circuit device manufacturing method | |
| TWI689063B (en) | Semiconductor device and method of manufacturing the same | |
| CN110718471A (en) | Resin sealing mold and method for manufacturing semiconductor device | |
| JP6338406B2 (en) | Manufacturing method of semiconductor device | |
| JPS6030144A (en) | Molding die for semiconductor device | |
| JPH07221244A (en) | Lead frame | |
| JP2008078324A (en) | Surface mount semiconductor package and manufacturing method thereof | |
| JP4308698B2 (en) | Semiconductor device | |
| JP6171920B2 (en) | Mold package | |
| JP2684920B2 (en) | Resin encapsulation mold for semiconductor device and manufacturing method | |
| JP2004158539A (en) | Method for manufacturing resin sealed semiconductor device | |
| JP2004104155A (en) | Semiconductor device | |
| JP2009146929A (en) | Resin sealing device for semiconductor device, and method of manufacturing semiconductor device |