JP2005135938A - Semiconductor device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can be connected much better to the terminals of a board than usual so as to be improved in mounting reliability. <P>SOLUTION: The semiconductor device is composed of a semiconductor chip, a tab 1b connected to the semiconductor chip, a suspension lead 1e supporting the tab 1b, leads 1a arranged around the semiconductor chip, a wire connecting the semiconductor chip to the leads 1a, and a sealing body sealing up the semiconductor chip with resin. The semiconductor device is assembled using a lead frame 1 where insulating resin dams 6 are formed at positions corresponding to the cutting lines 1j of the leads 1a. When the leads 1a are cut off after a resin sealing process is finished, the leads 1a are cut off at the positions where the insulating resin dams 6 are arranged, so that the sealing resin is not cut off, the sealing body can be protected against cracking, and the sealing resin can be prevented from dropping down on a board to improve the semiconductor device in reliability when the semiconductor device is mounted on the QFN board. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a semiconductor device and a manufacturing technique thereof, and more particularly, to a technique effective when applied to improvement of reliability in a semiconductor device.

In a conventional resin-encapsulated semiconductor device, the lead frame is upset so that the support portion on which the semiconductor element is mounted is positioned above the inner lead portion (see, for example, Patent Document 1).
Japanese Patent Laid-Open No. 11-74440 (FIG. 1)

  In a non-lead type semiconductor device, if the suspension leads that support the tabs that are chip mounting portions are arranged in four directions, a space is required for the arrangement of the suspension leads, and it is difficult to secure a bonding area in the inner leads in a small semiconductor device. It becomes. Furthermore, it is difficult to secure a space for routing the inner lead to shorten the gold wire, which is a thin metal wire. In addition, in the non-lead type semiconductor device, the length of the external connection surface of the lead is shortened along with the miniaturization, and the bonding area with the sealing resin is also reduced. The problem is that the lead peels off due to deformation stress. Alternatively, there is a problem that the peeling of the joint between the lead and the thin metal wire occurs.

  In a non-lead type semiconductor device, flash burrs due to sealing resin adhere to the external connection surface of the lead exposed on the mounting surface of the sealing body, reducing the area of the external connection surface and reducing the external connection surface and the substrate side. Decreasing connectivity with the terminal is a problem.

  Further, in the non-lead type semiconductor device, since the sealing resin and the lead are cut at the same time when the lead is cut, a crack is formed in the sealing resin disposed between the leads, and the crack seals between the leads. There is a problem that the resin for resin falls on the substrate when the semiconductor device is mounted on the mounting substrate, thereby reducing the mounting reliability.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device and a method for manufacturing the same that can improve reliability.

  Another object of the present invention is to provide a semiconductor device that improves connectivity with a terminal on the substrate side and a method for manufacturing the same.

  Furthermore, another object of the present invention is to provide a semiconductor device and a method for manufacturing the same that can improve mounting reliability.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in this application, the outline of typical ones will be briefly described as follows.

  That is, the present invention provides a semiconductor chip having a plurality of surface electrodes, a sealing body for resin-sealing the semiconductor chip, and the periphery of the mounting surface of the sealing body that is disposed around the semiconductor chip. A plurality of leads that are respectively bent in a direction away from the mounting surface of the sealing body, and the semiconductor chip. A thin metal wire that electrically connects the surface electrode of the lead and the inner portion of the lead corresponding to the surface electrode, and a recessed portion is formed in each of the bent portions of the plurality of leads. is there.

  The present invention also provides a step of preparing a lead frame having an insulating resin dam disposed between adjacent leads according to the outer shape of the sealing body of the semiconductor device, and a semiconductor chip in the chip mounting portion of the lead frame. A step of electrically connecting the surface electrode of the semiconductor chip and the corresponding lead to the corresponding lead by a fine metal wire, and the insulating resin dam preventing the sealing resin from flowing out between the leads. The semiconductor chip and the fine metal wire are sealed with a resin, and the plurality of leads are cut at a position of the insulating resin dam or at a position outside the insulating dam.

  Of the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  Since the concave portions are formed in the bent portions of the leads, the sealing resin can be blocked by the concave portions during resin sealing, and the sealing resin adheres to the external connection surface of the lead and flashes. Formation of burrs can be prevented. As a result, it is possible to improve the reliability by improving the connectivity between the terminal on the substrate side and the lead when the semiconductor device is mounted on the substrate.

  In addition, by preparing a lead frame in which an insulating dam is arranged between the leads and cutting the lead after resin sealing, the leads are sealed by cutting the leads at the position of the insulating resin dam or outside the insulating resin dam. Since it is not necessary to cut | disconnect resin for sealing, it can prevent that a crack is formed in resin for sealing. As a result, the sealing resin can be prevented from dropping on the substrate when the semiconductor device is mounted on the mounting substrate, and the mounting reliability of the semiconductor device can be improved.

  In the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary.

  Further, in the following embodiment, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments, but they are not irrelevant to each other unless otherwise specified. The other part or all of the modifications, details, supplementary explanations, and the like are related.

  Also, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), particularly when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and it may be more or less than the specific number.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted.

(Embodiment)
1 is a plan view showing an example of the structure of the semiconductor device according to the embodiment of the present invention, FIG. 2 is a side view showing an example of the structure of the semiconductor device shown in FIG. 1, and FIG. 3 is the structure of the semiconductor device shown in FIG. 4 is a partially enlarged perspective view showing an example of the structure of the semiconductor device shown in FIG. 1, FIG. 5 is a cross-sectional view showing an example of the structure of the semiconductor device shown in FIG. 1, and FIG. FIG. 7 is a partially enlarged cross-sectional view showing the structure of part A shown in FIG. 1, FIG. 7 is a plan view showing an example of the internal structure of the semiconductor device shown in FIG. 1 through a sealing body, and FIG. 8 is the semiconductor shown in FIG. 9 is a partial plan view showing an example of the structure of a lead frame used for assembling the apparatus, FIG. 9 is a partial enlarged plan view showing the structure of the B part shown in FIG. 8, and FIG. 10 is a modification in the embodiment of the present invention. FIG. 11 is a plan view showing a structure of an example semiconductor device, and FIG. 12 is a partially enlarged perspective view showing the structure, FIG. 12 is a partially enlarged plan view showing the structure of the main part of the lead frame used for assembling the semiconductor device of the modified example shown in FIG. 10, and FIG. 13 is the other in the embodiment of the present invention. FIG. 14 is a partially enlarged perspective view showing the structure of the semiconductor device of another modification shown in FIG. 13.

  The semiconductor device of the present embodiment shown in FIGS. 1 to 4 is a mold-type small semiconductor package assembled using the lead frame 1 shown in FIG. 8, and further, a mounting surface 3 a that is the back surface of the sealing body 3. A QFN (Quad Flat Non-leaded Package) 5 will be described as an example of the semiconductor device, which is a non-lead type in which the external connection surfaces 1d of the plurality of leads 1a are exposed at the peripheral portion of the lead 1a.

  Therefore, each lead 1a of the QFN 5 serves as both an inner lead embedded in the sealing body 3 and an outer lead exposed at the peripheral edge of the mounting surface 3a of the sealing body 3.

  The detailed configuration of the QFN 5 of the present embodiment will be described. As shown in FIGS. 5 and 6, the semiconductor chip 2 in which pads 2 a that are a plurality of surface electrodes are formed on the main surface 2 b and the semiconductor chip 2 are connected. A tab 1b which is a chip mounting portion provided with a chip support surface 1c, two suspension leads 1e which support the tab 1b and extend in directions opposite to each other, and the semiconductor chip 2 are arranged around And a plurality of leads 1 a each having an external connection surface 1 d exposed at the peripheral edge of the mounting surface 3 a of the sealing body 3 and an inner portion 1 g disposed inside the sealing body 3, and pads of the semiconductor chip 2 2a and the corresponding inner portion 1g of the lead 1a. The wire (metal thin wire) 4 is electrically connected to the semiconductor chip 2 and a plurality of wires 4 are sealed with resin.

  Furthermore, each of the plurality of leads 1a is bent in a direction away from the mounting surface 3a of the sealing body 3, and is arranged radially outward from the end on the semiconductor chip 2 side. That is, each lead 1a is bent upward and further bent so that the end portion on the semiconductor chip 2 side is disposed at a position substantially the same height as the tab 1b. That is, each lead 1a is bent at two locations.

  Each lead 1a, suspension lead 1e, and tab 1b are formed of a thin metal plate such as a copper alloy or an iron alloy, for example. Furthermore, the wire 4 is a gold wire, for example. The sealing resin that forms the sealing body 3 is, for example, a thermosetting epoxy resin. The semiconductor chip 2 is formed of, for example, silicon, and the back surface 2c of the semiconductor chip 2 is fixed to the chip support surface 1c of the tab 1b with a die bond material such as silver paste.

  In the QFN 5 of the present embodiment, the tab 1b is supported by two suspension leads 1e as shown in FIG. That is, in order to secure the area of the bonding surface 1f in the inner portion 1g of the lead 1a corresponding to the miniaturization of the QFN 5, one pair (two) of the suspension leads 1e is placed on one diagonal line of the substantially rectangular tab 1b. In this manner, the lead-out area of each lead 1a is widened, and each lead 1a is bent so that the end on the side of the semiconductor chip 2 is substantially the same height as the suspension lead 1e. The leads 1a are arranged so as to extend radially outward.

  Thus, the inner portion 1g of each lead 1a can be disposed in the vicinity of the semiconductor chip 2, and the wide portion 1i can be formed at the end portion of each lead 1a, and the wire 4 is connected to the wide portion 1i. It becomes possible to do. As a result, downsizing of the QFN 5 is realized.

  That is, according to the QFN 5 of the present embodiment, there are two suspension leads 1e that support the tab 1b, and each of the plurality of leads 1a is bent in a direction away from the mounting surface 3a of the sealing body 3 and the semiconductor. By arranging them radially outward from the end on the chip 2 side, it is possible to secure a space for routing the lead 1a, and to form the wide portion 1i at the end on the semiconductor chip 2 side of each lead 1a. Thus, a bonding area can be secured.

  Furthermore, since each lead 1a is bent upward, the bonding area with the sealing resin is increased, and the inner portion 1g of the lead 1a is embedded in the sealing resin, so that the lead 1a is made of the sealing resin. It can prevent peeling. Furthermore, since it can prevent that the stress by lead peeling is applied to the junction part with the wire 4 of the lead | read | reed 1a, it can prevent the pressure-bonding peeling of the said junction part. As a result, the reliability of the QFN 5 can be improved.

  Further, since each lead 1a is bent upward, the length of the inner portion 1g of each lead 1a is increased, which makes it difficult for moisture to enter. As a result, the moisture resistance reliability can be improved.

  Furthermore, since the end of each lead 1a on the semiconductor chip 2 side is disposed in the vicinity of the semiconductor chip 2, the length of the wire 4 can be shortened, and as a result, the electrical characteristics can be improved. At the same time, the wire flow during resin sealing can be reduced.

  Further, among the bent portions of each of the plurality of leads 1a, the bent portion 1h applied to the external connection surface 1d is formed with a recessed portion 1k which is a recessed portion as shown in FIG.

  The recess 1k blocks the entrainment of the sealing resin lead 1a into the external connection surface 1d during resin sealing, thereby forming a flash burr on the external connection surface 1d of the lead 1a. Can be prevented. The recess 1k is formed when the lead frame 1 is manufactured. For example, the recess 1k may be formed by V-groove processing, or may be formed by half-etching or the like. Good.

  Further, in the QFN 5 of the present embodiment, as shown in FIGS. 1 and 4, an insulating resin dam 6 is disposed between the ends of the lead 1 a exposed on the side surface of the sealing body 3. The insulating resin dam 6 is preferably made of a relatively soft insulating resin material and is made of a material not containing SiO2. The insulating resin dam 6 prevents the sealing resin from flowing out at the time of resin sealing. When the lead frame 1 is prepared in the assembly of the QFN 5, the cutting line for each lead 1a of the lead frame 1 has already been prepared. 1j is provided, and at the time of cutting the lead after resin sealing, the position where the insulating resin dam 6 is disposed or the position outside the insulating resin dam 6 is cut.

  Accordingly, since it is not necessary to cut the sealing resin when cutting the leads, it is possible to prevent cracks from being formed in the sealing resin (sealing body 3). As a result, it is possible to prevent the sealing resin from dropping on the substrate when the QFN 5 is mounted on the mounting substrate.

  Next, a method for manufacturing QFN 5 (semiconductor device) according to the present embodiment will be described.

  First, as shown in FIG. 8, a tab 1b that is a chip mounting portion, two suspension leads 1e that support the tab 1b, and a plurality of leads 1a disposed around the tab 1b are assembled. A lead frame 1 is prepared in which an insulating resin dam 6 is arranged in a ring shape between adjacent leads 1a according to the external position of the sealing body 3 of the QFN 5.

  That is, as shown in the enlarged view of FIG. 9, the lead frame 1 is prepared in which the insulating resin dam 6 is provided at a position corresponding to the cutting line 1j when cutting the lead after resin sealing. The insulating resin dam 6 is preferably made of a soft material that is easily cut together with a metal such as copper (Cu) and does not contain SiO2.

  Further, the tab 1b of the lead frame 1 is subjected to a tab raising process, and each lead 1a is bent in a direction approaching the tab 1b, and the tab 1b is positioned at substantially the same height as the tab 1b. It is also bent so that the end on the side is arranged. That is, each lead 1a is bent at two locations. Of the bent portions of each lead 1a, a concave portion 1k is formed in a bent portion 1h applied to the external connection surface 1d.

  Further, each of the plurality of leads 1a is radially arranged from the end on the tab 1b side toward the outside. Further, as shown in FIG. 7, a wide portion 1i is formed at the end of each lead 1a on the tab 1b side.

  The lead frame 1 is a thin plate material formed of, for example, copper (Cu), and the thickness thereof is, for example, about 0.15 to 0.2 mm. However, it is not limited to these. A through hole 1n used for positioning or the like is formed in the frame portion 1m of the lead frame 1.

  Thereafter, a semiconductor chip 2 having a semiconductor integrated circuit incorporated therein and a plurality of front surface pads 2a formed on the main surface 2b is prepared, and the back surface 2c of the semiconductor chip 2 and the tab 1b of the lead frame 1 are formed. Die bonding is performed to connect the chip support surface 1c.

  At that time, the semiconductor chip 2 is fixed to the tab 1b of the lead frame 1 with the main surface 2b facing upward via a die bond material (for example, silver paste or resin paste).

  Subsequently, as shown in FIGS. 6 and 7, the pad 2a of the semiconductor chip 2 and the wide portion 1i of the bonding surface 1f of the lead 1a corresponding thereto are wire-bonded by a bonding wire 4 and connected.

  Thereafter, resin sealing is performed. That is, the semiconductor chip 2 and the plurality of wires 4 are resin-sealed to form the sealing body 3 on the chip support surface 1 c side of the lead frame 1.

  At that time, the sealing resin flowing out between the leads 1a from the mold cavity is blocked (blocked) by the insulating resin dam 6. Furthermore, since the concave portion 1k is formed in the bent portion 1h of the plurality of leads 1a, the sealing resin can be blocked by the concave portion 1k.

  As a result, it is possible to prevent the sealing resin from flowing around and adhering to the external connection surface 1d of each lead 1a to form a flash burr. Therefore, the board-side terminal and the lead 1a when the QFN 5 is mounted on the board can be prevented. The connectivity can be improved.

  The sealing body 3 is formed so that the external connection surfaces 1d of the plurality of leads 1a are exposed at the peripheral edge of the mounting surface 3a.

  Thereafter, lead cutting (separation) for cutting and separating the leads 1 a and the tab suspension leads 1 e protruding from the sealing body 3 from the lead frame 1 is performed.

  At that time, a plurality of leads 1a and suspension leads 1e are cut from the lead frame 1 at a cutting line 1j on the insulating resin dam 6 shown in FIG. That is, each lead 1a, suspension lead 1e, and insulating resin dam 6 are cut.

  Thereby, since it is not necessary to cut | disconnect sealing resin containing the filler with high hardness, it can prevent that a crack is formed in sealing resin. As a result, the sealing resin can be prevented from dropping on the substrate when the QFN 5 is mounted on the mounting substrate, and the mounting reliability of the QFN 5 can be improved.

  By cutting the lead, assembly of the QFN 5 shown in FIGS. 1 to 4 is completed.

  Next, QFN 5 of a modification of the present embodiment will be described.

  The modification shown in FIG. 10 and FIG. 11 is a case where the position where the insulating resin dam 6 is formed is slightly inside the cutting line 1j of each lead 1a as shown in FIG. Since the outer side is cut slightly from the position of the insulating resin dam 6, only the leads 1a are cut, and the insulating resin dam 6 is not cut.

  As a result, the same effects as those of the QFN 5 shown in FIGS. 1 to 4 can be obtained, and in addition, the formation of burrs in the insulating resin dam 6 can be prevented, so that the mounting reliability of the QFN 5 can be further improved. it can.

  Further, another modification shown in FIGS. 13 and 14 is a case in which the sealing body 3 is not arranged between the leads 1a in the projecting portion of each lead 1a from the sealing body 3, and therefore FIG. As shown in FIG. 4, the sealing body 3 does not appear between the leads 1a of the external appearance of the QFN 5, and only the insulating resin dam 6 is disposed between the leads 1a.

  In this case, when cutting the leads, the outer side is surely cut from the position of the insulating resin dam 6, so that only the leads 1 a are cut, and the insulating resin dam 6 is not cut. In addition, since the exposed area of the sealing body 3 is reduced after cutting, factors such as dropping of the sealing body 3 can be reduced. Therefore, the same effects as those of QFN 5 shown in FIGS. 1 to 4 and FIGS. 10 and 11 can be obtained, and the mounting reliability of QFN 5 can be further improved.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments of the invention. However, the present invention is not limited to the embodiments of the invention, and various modifications can be made without departing from the scope of the invention. It goes without saying that it is possible.

  For example, in the above-described embodiment, the case where the number of the suspension leads 1e supporting the tab 1b is two has been described. However, the number of the suspension leads 1e may be one, or may be three or more.

  Moreover, although the case where the wide part 1i was formed in the edge part by the side of the semiconductor chip 2 of each lead 1a was demonstrated in the said embodiment, the wide part 1i does not necessarily need to be formed.

  Furthermore, in the above-described embodiment, the case where the semiconductor device manufactured using the lead frame 1 is the QFN 5 has been described. However, the semiconductor device is a lead having an insulating resin dam 6 provided on the cutting line 1j or inside thereof. Any semiconductor device other than the QFN 5 may be used as long as it can be assembled using the frame 1, for example, a QFP (Quad Flat Package).

  The present invention is suitable for electronic devices and semiconductor manufacturing techniques.

It is a top view which shows an example of the structure of the semiconductor device of embodiment of this invention. FIG. 2 is a side view showing an example of the structure of the semiconductor device shown in FIG. 1. FIG. 2 is a bottom view showing an example of the structure of the semiconductor device shown in FIG. 1. FIG. 2 is a partially enlarged perspective view showing an example of the structure of the semiconductor device shown in FIG. 1. It is sectional drawing which shows an example of the structure of the semiconductor device shown in FIG. FIG. 6 is a partially enlarged cross-sectional view showing an enlarged structure of a portion A shown in FIG. 5. FIG. 2 is a plan view showing an example of the internal structure of the semiconductor device shown in FIG. 1 through a sealing body. FIG. 2 is a partial plan view showing an example of the structure of a lead frame used for assembling the semiconductor device shown in FIG. 1. It is a partial enlarged plan view which expands and shows the structure of the B section shown in FIG. It is a top view which shows the structure of the semiconductor device of the modification in embodiment of this invention. FIG. 11 is a partially enlarged perspective view showing the structure of the semiconductor device of the modification shown in FIG. 10. FIG. 11 is a partially enlarged plan view showing a structure of a main part of a lead frame used for assembling the semiconductor device of the modification shown in FIG. 10. It is a top view which shows the structure of the semiconductor device of the other modification in embodiment of this invention. It is a partial expansion perspective view which shows the structure of the semiconductor device of the other modification shown in FIG.

Explanation of symbols

1 Lead frame 1a Lead 1b Tab (chip mounting part)
1c Chip support surface 1d External connection surface (part)
1e Suspension lead 1f Bonding surface 1g Inner part 1h Bending part 1i Wide part 1j Cutting line 1k Concave part 1m Frame part 1n Through hole 2 Semiconductor chip 2a Pad (surface electrode)
2b Main surface 2c Back surface 3 Sealed body 3a Mounting surface 4 Wire (fine metal wire)
5 QFN (semiconductor device)
6 Insulating resin dam

Claims (5)

A semiconductor chip having a plurality of surface electrodes;
A sealing body for resin-sealing the semiconductor chip;
The semiconductor chip has an external connection surface that is disposed around the semiconductor chip and exposed at a peripheral portion of a mounting surface of the sealing body, and an inner portion that is disposed inside the sealing body, and the sealing A plurality of leads each bent in a direction away from the mounting surface of the body;
A thin metal wire that electrically connects the surface electrode of the semiconductor chip and the inner portion of the lead corresponding to the surface electrode;
A semiconductor device, wherein a concave portion is formed in each of the bent portions of the plurality of leads. A semiconductor chip having a plurality of surface electrodes;
A chip mounting portion connected to the semiconductor chip;
A sealing body for resin-sealing the semiconductor chip;
The semiconductor chip has an external connection surface that is disposed around the semiconductor chip and exposed at a peripheral portion of a mounting surface of the sealing body, and an inner portion that is disposed inside the sealing body, and the sealing A plurality of leads that are each bent in a direction away from the mounting surface of the body, and are arranged radially outward from the end on the semiconductor chip side, and
A thin metal wire that electrically connects the surface electrode of the semiconductor chip and the inner portion of the lead corresponding to the surface electrode;
The chip mounting portion is supported by two suspension leads, and a recess is formed in each of the bent portions of the plurality of leads. A semiconductor chip having a plurality of surface electrodes;
A sealing body for resin-sealing the semiconductor chip;
The semiconductor chip has an external connection surface that is disposed around the semiconductor chip and exposed at a peripheral portion of a mounting surface of the sealing body, and an inner portion that is disposed inside the sealing body, and the sealing A plurality of leads that are each bent in a direction away from the mounting surface of the body, and are arranged radially outward from the end on the semiconductor chip side, and
A thin metal wire that electrically connects the surface electrode of the semiconductor chip and the inner portion of the lead corresponding to the surface electrode;
A wide width portion is formed at an end of each of the plurality of leads on the semiconductor chip side, and a concave portion is formed in each of the bent portions of the plurality of leads. A method of manufacturing a semiconductor device assembled using a lead frame having a chip mounting portion and a plurality of leads arranged around the chip mounting portion,
Preparing the lead frame having an insulating resin dam disposed between the adjacent leads according to the outer shape of the sealing body of the semiconductor device;
Connecting a semiconductor chip to the chip mounting portion of the lead frame;
Electrically connecting the surface electrode of the semiconductor chip and the lead corresponding thereto with a fine metal wire;
A step of preventing the sealing resin from flowing out between the leads by the insulating resin dam and resin-sealing the semiconductor chip and the metal thin wire;
And a step of cutting the plurality of leads at a position of the insulating resin dam or an outer position thereof. A method of manufacturing a semiconductor device assembled using a lead frame having a chip mounting portion and a plurality of leads arranged around the chip mounting portion,
Preparing the lead frame having an insulating resin dam disposed between the adjacent leads according to the outer shape of the sealing body of the semiconductor device;
Connecting a semiconductor chip to the chip mounting portion of the lead frame;
Electrically connecting the surface electrode of the semiconductor chip and the lead corresponding thereto with a fine metal wire;
The insulating resin dam prevents the sealing resin from flowing out between the leads to resin-seal the semiconductor chip and the fine metal wires, and a part of each of the plurality of leads is exposed at the peripheral portion of the mounting surface. Forming the sealing body so as to
And a step of cutting the plurality of leads at a position of the insulating resin dam or an outer position thereof.

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