TW201021185A - Leadframe and method for manufacturing the same - Google Patents

Leadframe and method for manufacturing the same Download PDF

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Publication number
TW201021185A
TW201021185A TW098123215A TW98123215A TW201021185A TW 201021185 A TW201021185 A TW 201021185A TW 098123215 A TW098123215 A TW 098123215A TW 98123215 A TW98123215 A TW 98123215A TW 201021185 A TW201021185 A TW 201021185A
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Taiwan
Prior art keywords
resin
lead frame
wire
rod
wires
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TW098123215A
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Chinese (zh)
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TWI482251B (en
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Akihiro Kubota
Tomoaki Ishigaki
Yoshihito Takamatsu
Norio Ojima
Katsumi Yoshida
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Shiima Electronics Inc
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Publication of TWI482251B publication Critical patent/TWI482251B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49558—Insulating layers on lead frames, e.g. bridging members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

Provided is a leadframe which can eliminate a dam bar cutting/removing step after resin sealing, in manufacture of resin-sealed semiconductor device. A dam-bar-free leadframe, which has a plurality of outer leads and a plurality of inner leads and does not have a dam bar, is formed by machining a metal thin plate, a resin solution of an insulating thermosetting resin or a resin solution of an ultraviolet curable resin is applied on the front surface or the rear surface of the leadframe in an inner lead area, the applied resin solution which has flowed into a space between the leads is moved to a boundary between the outer lead and the inner lead through a lead side wall by operation of surface tension, and the leadframe is manufactured by forming a resin dam bar by curing the applied resin solution at the boundary. Thus, the leadframe, which leaves no resin residual on the front and rear surfaces of the leadframe at the resin dam bar position, is provided.

Description

201021185 六、發明說明： 【發明所屬之技術領域】 本發明是關於裝配樹脂密封型半導體裝置的構件的導 線架及其製造方法以及使用它的半導體裝置。 【先前技術】 例如第7圖所示地，樹脂密封型半導體裝置是在導線 Φ 架的晶片銲墊1上裝載半導體元件11，而以線13接線施 以鍍銀等表面處理的內導線2前端部與半導體元件11的 端子12，以密封用樹脂14進行密封，然後，將外導線4 成形成海鷗式機翼狀。如第8圖所示地，利用上述密封用 樹脂14的密封，是以金屬模（上）21與金屬模（下）22夾住 裝載半導體元件的導線架，而在兩金屬模間的空隙藉由注 入密封用樹脂所進行。這時候，爲了樹脂不會從導線間的 間隙漏出的方式，如第9圖所示地，在導線架有塡補導線 φ 間的間隙的堵住桿3設於外導線部。 傳統上，以金屬薄板，藉由壓機加工或蝕刻加工同時 地形成有外導線、內導線及堵住桿，而堵住桿是利用與外 導線同一金屬原材料所形成。所以，密封樹脂之後，以沖 孔等處理切斷分離堵住桿之後，需要解除電性地短路狀態 的工序。 近年來，導線架是有如針腳化及狹窄間距化的趨勢， 而有爲了沖孔堵住桿的衝孔金屬模的加工或維修的經費上 有增加的趨勢。如此，可省略密封樹脂後的堵住桿切斷分 -5- 201021185 離工序的方式，以絕緣性樹脂形成堵住桿的方法，被提案 在日本專利第2970066號（專利文獻丨），日本特開平9-283691號（專利文獻2)，日本特開平n_233704號（專利文 獻3)。 專利文獻 專利文獻1:日本專利第2970066號公報 專利文獻2:日本特開平9-283691號公報 專利文獻3:日本特開平11 _2337 〇4號公報 _ 【發明內容】 然而’在上述專利文獻所提案的樹脂製堵住桿的形成 方法，是壓入於導線間的方法（專利文獻1)，橫跨外導線 — 的方式塗佈熱硬化性樹脂，然後加熱加壓而塡充於導線間 的方法（專利文獻2)，使用罩幕等以印刷方式塗料密封方 法（專利文獻3)，惟爲了多針腳化，在壓入於導線間的方 法（專利文獻1)或是使用罩幕的方法（專利文獻3)，使成本 過高而不實用。又，橫跨外導線的方式將樹脂塗佈於導線 架表面的情形（專利文獻2)，而在導線架表背面留下樹脂 ’爲了以密封用樹脂進行密封，而在以金屬模夾住關閉時 使得導線架變形，或是在金屬模與導線架之間產生間隙而 有產生樹脂洩漏的情形。 本發明是在此種狀況下所創作者，其目的是在於低成 本地提供依密封用樹脂所致的半導體裝置的密封之際，不 會產生導線架或半導體裝置的變形或樹脂洩漏，密封後可 -6- 201021185 省略堵住桿切斷去除工序的導線架或半導體裝置。 本發明的第一項發明，是一種導線架，屬於具有複數 外導線’及複數內導線，而在上述外導線與上述內導線的 境界具有絕緣性樹脂製的堵住桿的導線架，其特徵爲： 上述絕緣性樹脂，是在硬化完成前沿著導線側壁可移 動在內導線間的熱硬化樹脂或紫外線硬化樹脂， 內導線間隔是在堵住桿近旁愈接近堵住桿愈狹窄， Φ 而且’外導線間隔是在堵住桿近旁成爲比位於堵住桿 的導線間隔還要寬廣。 本發明的第二項發明是一種半導體裝置，屬於在上述 第1項發明的導線架上裝載半導體元件，接線上述內導線 與半導體元件的端子，而以密封用樹脂進行密封所成的半 導體裝置’其特徵爲：上述絕緣樹脂製堵住桿是位於形成 有密封用樹脂的部分與未形成的部分的境界線（模塑密封 線）上。 φ 本發明的第三項發明是一種導線架的製造方法，其特 徵爲： 具有複數外導線，及複數內導線，而加工金屬薄板以 形成未具有堵住桿的無堵住桿導線架， 在內導線領域的導線架表面或背面塗佈絕緣性的熱^ 化性樹脂或是紫外線硬化樹脂的樹脂液， 將流進導線間的間隙的塗佈樹脂液沿著導線側壁而寧月 著外導線與內導線之境界方向移動， 然後，將塗佈樹脂予以硬化而在模塑密封線上形成接^ 201021185 脂製堵住桿。 在上述本發明的第三發明中，塗佈樹脂液的移動方法 ，藉由內導線間隔愈接近外導線與內導線的境界方向愈狹 窄，使得樹脂液沿著導線側壁朝上述境界方向移動。藉由 將外導線間隔在比塗佈樹脂液移動停止位置還位於外側作 成寬廣，而停止上述塗佈樹脂液的移動的方法較適當。 在本發明中，堵住桿是絕緣性樹脂之故，因而以密封 用樹脂進行密封半導體裝置之後，並不需要切斷去除堵住 桿。又，樹脂製堵住桿是利用塗佈法所形成之故，因而低 成本。又，將樹脂液塗佈於外導線領域，沿著導線間的側 壁移動至內導線與外導線的境界之後，藉由形成堵住桿之 故，因而在堵住桿近旁樹脂不會殘留於導線架的表背面， 而爲了密封，當關閉金屬模時，不會有導線架變形成產生 間隔而也不會產生樹脂洩漏。 又，在本發明中，內導線間隔爲在堵住桿位置，亦即 橫跨內導線與外導線之境界位置變狹窄，而由導線架表面 觀看，則內導線間隔的形狀是成爲台形。所以，堵住桿的 樹脂形狀是成爲台形，而在硬化時，即使堵住桿的樹脂稍 收縮，也藉由壓入密封用樹脂時的壓力可防止樹脂製堵住 桿脫落的情形。 又，利用形成堵住桿的樹脂硬化之際所產生的收縮， 將樹脂製堵住桿的中央位置比導線架表背面的高度位置稍 低，而在密封之際的金屬模與堵住桿之間作成些微間隙， 也可使得樹脂製堵住桿兼具從密封用樹脂所發生的氣體的 • 8 - 201021185 洩氣口（漏口）的作用。 又，在本發明的第二發明中，堵住桿上的一部分成爲 以密封用樹脂所覆蓋之故，因而可防止樹脂製堵住桿的剝 離或脫落。 【實施方式】 以下，針對於本發明的實施形態，使用圖式加以說明 ❹ 在本發明中，首先，將銅合金，鎳-鐵合金等的金屬 薄板施以壓機加工或蝕刻加工，以形成未具有堵住桿的無 堵住桿的導線架圖案。在第1圖表示本發明的導線架的槪 觀圖。在本發明中，在內導線2與外導線4之間的模塑密 封線34的位置，設有絕緣性樹脂製堵住桿33。 在第2圖表示在本發明所使用的無堵住桿導線架的外 導線與內導線的境界附近的擴大圖。在上述境界附近，內 φ 導線間隔W1是朝著上述境界變狹窄，當超過上述境界而 進入到外導線領域，則外導線間隔W2變寬廣。導線架的 板厚是0.1〜0.2mm，較佳爲0.1〜0.15mm。外導線間距， —般是〇.5mm，而外導線間隔一般爲0.2〜0.3mm。又，導 線間隔變狹窄的比率（錐度），是每長度l〇〇〇〇pm(lmm)爲5 〜60μιη較佳，更佳爲 10〜50μιη，最佳爲 10〜40μηι。若 錐度過小，則堵住桿形成用樹脂的塗佈液的移動量變小而 不理想。又，外導線的間隔成爲比在上述境界的導線間隔 還要寬廣。 -9 - 201021185 在導線架的內導線的前端部分的導線表面；一般容易 打線接合的方式’藉由點鍍或環形鍍等手段，施以銀或金 等的鏟處理。 以下說明堵住桿的形成方法。在內導線領域當將堵住 桿形成用的樹脂液塗佈於塗佈線3 1 (第3 a圖），則所塗佈 的樹脂液32藉由表面張力進入導線間（第3b圖），又，樹 脂液3 2是藉由表面張力沿著導線側壁，朝著導間隔狹窄 方向，亦即朝著上述境界方向移動（第3c圖），而在導線間 隔變寬廣的場所停止移動（第3d圖）。在該停止位置，藉由 將樹脂予以硬化完成而形成樹脂製堵住桿。又，所塗佈的 樹脂液是利用提昇溫度就可降低黏度，而可將在停止位置 的移動作成容易。 堵住桿形成用的樹脂，是使用著熱硬化性樹脂或紫外 線硬化性樹脂，較佳是使用熱硬化性樹脂。作爲熱硬化性 樹脂，列舉有丙烯系熱硬化性樹脂，聚醯亞胺系熱硬化性 樹脂，聚醯胺系熱硬化性樹脂，環氧系熱硬化性樹脂，這 些中，以環氧樹脂系熱硬化性樹脂較佳，尤其是由環氧樹 脂與潛在性硬化劑所成的一液型環氧樹脂系導線架較佳。 塗佈樹脂液時的黏度是4Pa* s以上60Pa· s以下較佳。 若樹脂液的黏度過高，則塗佈速度變慢，又樹脂液的移動 成爲不容易而不理想。若樹脂黏度過低，則在塗佈時會產 生液垂下等而不容易處理之故，因而不理想。塗佈方法是 分配法較佳，尤其是使用螺旋式分配器的分配法容易調整 塗佈液量較佳。 -10- 201021185 樹脂的硬化方法是使用對應於其樹脂的通常的方法。 使用一液型環氧樹脂系熱硬化性樹脂時，在170〜200°C加 熱15秒鐘至兩分鐘就可使之硬化固定。又，使用熱硬化 性樹脂時，則可兼具將移動至停止位置作成容易所用的加 熱，及昇過至硬化反應溫度所用的加熱。具體上，在移動 至停止移動位置之前（第3c圖）開始加熱，而在促進移動將 要到達至停止位置（第3d圖）的時候成爲硬化反應溫度較有 φ 效率。 堵住桿形成用樹脂的塗佈液的移動量，是藉由所塗佈 的樹脂液的樹脂液的黏度或內導線間隔，內導線的側面表 面狀態等有所不同，惟在導線間隔變狹窄的比率與樹脂移 動距離之間，有大約正的相關關係。第4圖是表示在導線 的間距間隔爲1 20μιη的導線架，塗佈著所塗佈的樹脂液的 黏度大約20Pa · s的堵住桿形成用樹脂液的情形的錐度與 樹脂移動量的關係的一例子的圖表。在第4圖的圖表中， ® 在縱軸表示樹脂液的移動量，而在橫軸表示每長度 ΙΟΟΟμπι的導線間隔變狹窄的比率（錐度）。由第4圖可知， 在樹脂塗佈液的移動距離與錐度有正的相關關係之故，因 而藉由控制導線間隔的錐度，就可控制樹脂塗佈液的移動 量，而在所期望的位置可形成樹脂製堵住桿。 又’如第5圖，第6圖所示地，將導線配置成放射狀 ，而模塑密封線作成方形狀時，則一直到樹脂塗佈線與堵 住桿形成位置爲止的距離，在中心部與隅角部不相同。亦 即，使得堵住桿的位置作成整齊的方式而爲了移動樹脂塗 -11 - 201021185 佈液，必須將隅角部的樹脂移動量（Leo)作成比中心部的 樹脂移動量（Lee)還要大。此種情形，藉由將隅角部的錐度 (Tco)作成比中心部的錐度（Tee)還要大，來控制樹脂塗佈 液的移動量就可以。 半導體裝置是在如上述地所製造的導線架的所定位置 裝載半導體元件。而接線內導線的鍍處理部與半導體元件 的端子，然後，如第7圖所示地以密封用金屬模（上模具 )21與密封用金屬模（下模具）22夾住導線架，而在金屬模 內部注入密封用樹脂，藉由使之固化而被製造。作爲密封 用樹脂，使用作爲半導體裝置的密封用樹脂者都可以使用 。例如可例舉由環氧樹脂與氧化鋁或矽化物等的無機塡充 劑所成的樹脂組成物。在本發明中，不必切斷去除密封後 的堵住桿之故，因而作成模塑密封線34成爲堵住桿33上 的方式，以密封用樹脂來覆蓋堵住桿的一部分較佳。藉由 以密封用樹脂覆蓋堵住桿的一部分，可防止堵住桿的剝離 、脫落。 在本發明中，可省略密封樹脂後的堵住桿切斷去除工 序之故，因而低成本地可製造多針腳化且狹窄間距化的樹 脂密封型半導體裝置。 【圖式簡單說明】 第1圖是表示本發明的導線架的全體槪觀圖。 第2圖是表示在本發明的無堵住桿導線架的局部擴大 201021185 第3(a)圖至第3(d)圖是表示本發明的製造方法的說明 圖。 第4圖是表示塗佈的樹脂液的移動量與錐度之關係的 一例的圖表。 第5圖是表示說明隅角部與中心部之樹脂液的移動窠 不相同所用的說明圖。 第6圖是表示說明隅角部與中心部之樹脂液的移動囊 φ 不相同所用的局部圖。 第7圖是表示樹脂密封型半導體裝置的槪略圖。 第8圖是表示半導體裝置的密封樹脂方法的說明圖。 第9圖是表示習知的導線架的槪略圖。 第10圖是表示半導體裝置的密封樹脂方法的說明圖 【主要元件符號說明】 ❹ 1 :晶片焊塾 2 :內導線 3 :堵住桿 4 :外導線 1 1 :半導體元件 1 2 :端子 13 :線 1 4 :密封用樹脂 21 :金屬模（上模具） -13- 201021185 22 :金屬模（下模具） 3 1 :塗佈線 3 2 :塗佈樹脂 3 3 :樹脂製堵住桿 3 4 :模塑密封線[Technical Field] The present invention relates to a wire holder for assembling a member of a resin-sealed type semiconductor device, a method of manufacturing the same, and a semiconductor device using the same. [Prior Art] As shown in Fig. 7, a resin-sealed semiconductor device is provided with a semiconductor element 11 mounted on a wafer pad 1 of a wire Φ frame, and a front end of an inner wire 2 which is surface-treated by silver plating or the like is applied by wire 13 The terminal 12 and the terminal 12 of the semiconductor element 11 are sealed with a sealing resin 14, and then the outer lead 4 is formed into a seagull-like airfoil shape. As shown in Fig. 8, the sealing of the sealing resin 14 is carried out by sandwiching the lead frame on which the semiconductor element is mounted by the metal mold (upper) 21 and the metal mold (lower) 22, and borrowing from the gap between the two metal molds. It is carried out by injecting a resin for sealing. At this time, in order to prevent the resin from leaking from the gap between the wires, as shown in Fig. 9, the blocking rod 3 having the gap between the lead wires φ in the lead frame is provided in the outer lead portion. Conventionally, an outer wire, an inner wire, and a plug rod are simultaneously formed by a metal sheet by press working or etching, and the plug is formed by using the same metal material as the outer wire. Therefore, after the resin is sealed, the process of cutting off the plug and blocking the rod by punching or the like is performed, and the step of electrically short-circuiting is required. In recent years, the lead frame has a tendency to be pinned and narrowly spaced, and there is an increasing trend in the processing or maintenance of the punching metal mold for punching the rod. In this way, it is possible to omit the method of blocking the rod after the sealing resin is cut off from the -5 to 201021185, and the method of blocking the rod with an insulating resin is proposed in Japanese Patent No. 2970066 (Patent Document No.), Japan Special Japanese Patent Laid-Open No. Hei No. No. 233704 (Patent Document 3). Patent Document 1: Japanese Patent Publication No. 2970066 Patent Document 2: Japanese Laid-Open Patent Publication No. Hei 9-283691. Patent Document 3: Japanese Patent Laid-Open Publication No. Hei No. Hei No. Hei. The method for forming a resin-blocking rod is a method of pressing between the wires (Patent Document 1), applying a thermosetting resin across the outer wire, and then heating and pressurizing to fill the wires. (Patent Document 2) A method of printing a coating and sealing method using a mask or the like (Patent Document 3), but a method of press-fitting between wires (Patent Document 1) or a method using a mask (patent for multi-pin stitching) Document 3) makes the cost too high and not practical. Further, in the case where the resin is applied to the surface of the lead frame across the outer lead (Patent Document 2), the resin is left on the back surface of the lead frame, in order to seal with a sealing resin, and to close with a metal mold. This causes the lead frame to be deformed, or a gap is formed between the metal mold and the lead frame to cause a resin leakage. The present invention has been made in such a situation, and the object thereof is to provide a sealing of a semiconductor device by a sealing resin at a low cost without causing deformation of a lead frame or a semiconductor device or resin leakage, and after sealing -6-201021185 The lead frame or semiconductor device that blocks the rod cutting and removing process is omitted. The first invention of the present invention is a lead frame, which is a lead frame having a plurality of outer wires 'and a plurality of inner wires, and having an insulating resin plugging rod at the boundary between the outer wires and the inner wires. The above insulating resin is a thermosetting resin or an ultraviolet curing resin which can be moved between the inner wires along the side wall of the wire before the hardening is completed, and the inner wire spacing is closer to the blocking rod, and the narrower, Φ and The outer wire spacing is wider near the blocking rod than the wire spacing at the blocking rod. According to a second aspect of the invention, there is provided a semiconductor device comprising: a semiconductor device in which a semiconductor element is mounted on a lead frame of the first invention, and a terminal of the inner lead and the semiconductor element is connected, and sealed by a sealing resin; It is characterized in that the insulating resin stopper rod is located on a boundary line (molding seal line) of a portion where the sealing resin is formed and an unformed portion. φ The third invention of the present invention is a method for manufacturing a lead frame, characterized in that: a plurality of outer wires and a plurality of inner wires are processed, and the metal thin plate is processed to form a non-blocking rod lead frame without a blocking rod, In the inner wire field, the surface of the lead frame is coated with an insulating heat-oxidizing resin or a resin liquid of an ultraviolet curing resin, and the coating resin liquid flowing into the gap between the wires is along the side wall of the wire and the outer wire is bent. Moving in the direction of the boundary of the inner wire, the coating resin is then hardened to form a grease plug on the molded seal line. In the above third invention of the present invention, the method of moving the coating resin liquid is such that the closer the inner wire spacing is to the narrower direction of the boundary between the outer wire and the inner wire, the resin liquid moves toward the above-described boundary direction along the wire side wall. The method of stopping the movement of the coating resin liquid by appropriately widening the outer lead at a position other than the coating resin liquid stopping position is suitable. In the present invention, since the plugging rod is an insulating resin, it is not necessary to cut and remove the plugging rod after sealing the semiconductor device with the sealing resin. Further, since the resin plugging rod is formed by a coating method, it is low in cost. Moreover, after the resin liquid is applied to the outer conductor field and moved along the side wall between the wires to the boundary between the inner conductor and the outer conductor, the resin is not blocked in the vicinity of the rod by forming a plugging rod. The back of the front and back of the rack, and for sealing, when the metal mold is closed, there is no gap between the lead frames and no resin leakage. Further, in the present invention, the inner wire spacing is narrowed at the position where the rod is blocked, i.e., the boundary between the inner wire and the outer wire is narrowed, and when viewed from the surface of the lead frame, the shape of the inner wire spacing is a table shape. Therefore, the shape of the resin which blocks the rod is a table shape, and even if the resin which blocks the rod is slightly shrunk during hardening, the pressure at which the resin is pressed into the sealing resin can prevent the resin from blocking the rod from falling off. Further, by the shrinkage generated when the resin forming the plugging rod is hardened, the center position of the resin blocking rod is slightly lower than the height position of the back surface of the lead frame, and the metal mold and the blocking rod are sealed at the time of sealing. By making a slight gap between the two, it is also possible to make the resin block the rod from the gas leakage port (leakage) of the gas generated from the sealing resin. Further, in the second invention of the present invention, a part of the rod is blocked by the sealing resin, so that peeling or falling off of the rod can be prevented by the resin. [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the present invention, first, a metal thin plate such as a copper alloy or a nickel-iron alloy is subjected to press processing or etching processing to form an unformed portion. A lead frame pattern without a blocking rod that blocks the rod. Fig. 1 is a perspective view showing a lead frame of the present invention. In the present invention, the position of the molded seal line 34 between the inner lead 2 and the outer lead 4 is provided with an insulating resin to block the rod 33. Fig. 2 is an enlarged view showing the vicinity of the boundary between the outer conductor and the inner conductor of the non-blocking pole lead frame used in the present invention. In the vicinity of the above boundary, the inner φ wire spacing W1 is narrowed toward the above boundary, and when it exceeds the above boundary and enters the outer wire field, the outer wire spacing W2 becomes wider. The thickness of the lead frame is 0.1 to 0.2 mm, preferably 0.1 to 0.15 mm. The outer conductor spacing is generally 〇5mm, while the outer conductor spacing is generally 0.2~0.3mm. Further, the ratio (taper) at which the line spacing becomes narrow is preferably 5 to 60 μmη per length l〇〇〇〇pm (lmm), more preferably 10 to 50 μm, and most preferably 10 to 40 μm. When the taper is too small, the amount of movement of the coating liquid that blocks the resin for forming the rod becomes small, which is not preferable. Further, the interval between the outer wires becomes wider than the interval between the wires at the above boundary. -9 - 201021185 The surface of the wire at the front end of the inner lead of the lead frame; generally easy to wire-bonded. 'Spray treatment such as silver or gold by means of spot plating or ring plating. The method of forming the plugging rod will be described below. In the field of the inner conductor, when the resin liquid for blocking the rod formation is applied to the coating line 3 1 (Fig. 3 a), the applied resin liquid 32 enters between the wires by the surface tension (Fig. 3b). Further, the resin liquid 3 2 is moved in the narrow direction of the guide interval by the surface tension along the side wall of the lead wire, that is, in the direction of the boundary (Fig. 3c), and stops moving at a place where the lead interval is widened (3d). Figure). At the stop position, a resin-blocking rod is formed by hardening the resin. Further, the applied resin liquid can lower the viscosity by raising the temperature, and the movement at the stop position can be made easy. The resin for blocking the formation of the rod is a thermosetting resin or an ultraviolet curable resin, and a thermosetting resin is preferably used. Examples of the thermosetting resin include a propylene-based thermosetting resin, a polyimide-based thermosetting resin, a polyamide-based thermosetting resin, and an epoxy-based thermosetting resin. Among these, epoxy resin is used. The thermosetting resin is preferred, and in particular, a one-pack epoxy type lead frame made of an epoxy resin and a latent curing agent is preferred. The viscosity at the time of applying the resin liquid is preferably 4 Pa*s or more and 60 Pas or less. If the viscosity of the resin liquid is too high, the coating speed becomes slow, and the movement of the resin liquid is not easy. If the viscosity of the resin is too low, it may not be easy to handle when the liquid is dripped or the like at the time of coating, which is not preferable. The coating method is preferably a dispensing method, and in particular, it is preferable to easily adjust the amount of the coating liquid by a dispensing method using a screw type dispenser. -10-201021185 The hardening method of the resin is to use a usual method corresponding to its resin. When a one-pack epoxy resin-based thermosetting resin is used, it can be hardened and fixed by heating at 170 to 200 ° C for 15 seconds to two minutes. Further, when a thermosetting resin is used, it is possible to combine heating to facilitate the movement to the stop position and heating to the curing reaction temperature. Specifically, heating is started before moving to the stop position (Fig. 3c), and the cleavage reaction temperature is more efficient when the movement is about to reach the stop position (Fig. 3d). The amount of movement of the coating liquid for blocking the resin for forming the rod is different depending on the viscosity of the resin liquid of the resin liquid to be applied or the interval between the inner conductors, the side surface state of the inner conductor, and the like, but the interval between the conductors becomes narrow. There is a positive correlation between the ratio of the resin and the distance the resin moves. Fig. 4 is a view showing the relationship between the taper and the amount of movement of the resin in the case where the distance between the conductors is 1 20 μm and the viscosity of the applied resin liquid is about 20 Pa·s to block the resin liquid for rod formation. An example of a chart. In the graph of Fig. 4, the vertical axis represents the amount of movement of the resin liquid, and the horizontal axis represents the ratio (taper) at which the interval of the wire per length ΙΟΟΟμπ is narrowed. As can be seen from Fig. 4, since the moving distance of the resin coating liquid has a positive correlation with the taper, the amount of movement of the resin coating liquid can be controlled by controlling the taper of the wire spacing, and at the desired position. A resin can be formed to block the rod. Further, as shown in Fig. 5 and Fig. 6, the wires are arranged in a radial shape, and when the molded sealing wire is formed into a square shape, the distance from the resin coating line to the position at which the rod is formed is at the center. The department is not the same as the corner. That is, in order to make the position of the blocking rod in a neat manner, in order to move the resin coating -11 - 201021185, it is necessary to make the amount of resin movement (Leo) of the corner portion more than the amount of resin movement (Lee) at the center portion. Big. In this case, the amount of movement of the resin coating liquid can be controlled by making the taper (Tco) of the corner portion larger than the taper (Tee) of the center portion. The semiconductor device is mounted with semiconductor elements at a predetermined position of the lead frame manufactured as described above. And the plating processing portion of the wiring inside the wiring and the terminal of the semiconductor element, and then, as shown in Fig. 7, the sealing metal mold (upper mold) 21 and the sealing metal mold (lower mold) 22 are sandwiched between the lead frames, and A resin for sealing is injected into the inside of the mold, and it is manufactured by hardening it. As the resin for sealing, any resin used as a sealing material for a semiconductor device can be used. For example, a resin composition composed of an epoxy resin and an inorganic cerium agent such as alumina or cerium compound can be exemplified. In the present invention, it is not necessary to cut off the plugging rod after the sealing, so that the molded sealing wire 34 is formed to block the rod 33, and it is preferable to cover the portion of the rod with the sealing resin. By covering a part of the rod with the sealing resin, it is possible to prevent the rod from being peeled off or peeled off. In the present invention, the plugging and cutting removal process after sealing the resin can be omitted, so that a multi-pinned and narrow-pitch resin-sealed type semiconductor device can be manufactured at low cost. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing the entire lead frame of the present invention. Fig. 2 is a partial enlarged view showing a non-blocking rod lead frame of the present invention. 201021185 Figs. 3(a) to 3(d) are explanatory views showing a manufacturing method of the present invention. Fig. 4 is a graph showing an example of the relationship between the amount of movement of the applied resin liquid and the taper. Fig. 5 is an explanatory view showing the difference in movement of the resin liquid between the corner portion and the center portion. Fig. 6 is a partial view showing the use of the moving capsule φ of the resin liquid at the corner portion and the center portion. Fig. 7 is a schematic view showing a resin sealed semiconductor device. Fig. 8 is an explanatory view showing a method of sealing a resin of a semiconductor device. Fig. 9 is a schematic view showing a conventional lead frame. Fig. 10 is an explanatory view showing a method of sealing a resin of a semiconductor device. [Description of main components] ❹ 1 : Wafer soldering 2 : Inner conductor 3 : Plugging rod 4 : Outer conductor 1 1 : Semiconductor component 1 2 : Terminal 13 : Line 14: Sealing resin 21: Metal mold (upper mold) -13- 201021185 22: Metal mold (lower mold) 3 1 : Coating line 3 2 : Coating resin 3 3 : Resin blocking rod 3 4 : Molded seal line

-14--14-

Claims (1)

201021185 七、申請專利範園： 1·—種導線架，屬於具有複數外導線，及複數內導線 ’而在上述外導線與上述內導線的境界具有絕緣性樹脂製 的堵住桿的導線架，其特徵爲： 上述絕緣性樹脂，是在硬化完成前沿著導線側壁可移 動在上述內導線間的熱硬化樹脂或紫外線硬化樹脂， 內導線間隔是在堵住桿近旁愈接近堵住桿愈狹窄， 而且’外導線間隔是在堵住桿近旁成爲比位於堵住桿 的導線間隔還要寬廣。 2. —種半導體裝置，屬於在申請專利範圍第1項所述 的導線架上裝載半導體元件，接線上述內導線與半導體元 件的端子，而以密封用樹脂進行密封所成的半導體裝置， 其特徵爲： 上述絕緣樹脂製堵住桿是位於形成有密封用樹脂的部 分與未形成的部分的境界線（模塑密封線）上。 3. —種導線架的製造方法，其特徵爲： 具有複數外導線，及複數內導線，而加工金屬薄板以 形成未具有堵住桿的無堵住桿導線架， 在內導線領域的導線架表面或背面塗佈絕緣性的熱硬 化性樹脂或是紫外線硬化樹脂的樹脂液， 將流進導線間的間隙的塗佈樹脂液沿著導線側壁而朝 著外導線與內導線之境界方向移動’ 然後，將塗佈樹脂予以硬化而在模塑密封線上形成樹 脂製堵住桿。 -15- 201021185 4. 如申請專利範圍第3項所述的導線架的製造方法， 其中， 內導線間隔是爲了愈接近外導線與內導線的境界愈狹 窄，使得樹脂液朝著上述境界方向移動。 外導線間隔是爲了在比塗佈樹脂液移動停止位置還位 於外側間p變成寬廣，而停止上述塗佈樹脂液的移動。 5. 如申請專利範圍第4項所述的導線架的製造方法， 其中， ❹ 內導線間隔愈接近於外導線與內導線的境界愈變狹窄 的比率（錐度）’是導線架的角附近者比導線架的各邊中心 附近還要大。 魯201021185 VII. Application for a patent garden: 1·- a type of lead frame, which is a lead frame with a plurality of outer wires and a plurality of inner wires' and having an insulating resin plugging rod at the boundary between the outer wires and the inner wires. The insulating resin is a thermosetting resin or an ultraviolet curing resin which can be moved between the inner wires along the side wall of the wire before the hardening is completed, and the inner wire spacing is closer to the blocking rod than the blocking rod is narrower. Moreover, the 'outer wire spacing is wider near the blocking rod than the wire spacing between the blocking rods. 2. A semiconductor device which is characterized in that a semiconductor device is mounted on a lead frame as described in claim 1 of the patent application, and a terminal for connecting the inner lead and the semiconductor element and sealing with a sealing resin is used. In the above, the insulating resin plugging rod is located on a boundary line (molded sealing line) of a portion where the sealing resin is formed and an unformed portion. 3. A method for manufacturing a lead frame, characterized by: having a plurality of outer wires, and a plurality of inner wires, and processing the metal sheets to form a non-blocking rod lead frame without a blocking rod, and the lead frame in the inner wire field An insulating thermosetting resin or a resin liquid of an ultraviolet curable resin is applied to the surface or the back surface, and the coating resin liquid flowing into the gap between the wires moves along the side wall of the wire toward the boundary between the outer wire and the inner wire. Then, the coating resin is hardened to form a resin plugging rod on the molded sealing line. -15-201021185 4. The method of manufacturing the lead frame according to claim 3, wherein the inner wire spacing is such that the closer the boundary between the outer wire and the inner wire is, the more the resin liquid moves toward the above boundary. . The outer lead is spaced apart to be wider than the outer side of the coating resin liquid stopping position, and the movement of the coating resin liquid is stopped. 5. The method of manufacturing a lead frame according to claim 4, wherein the ratio of the inner conductor to the inner conductor and the inner conductor is narrower (taper) is the vicinity of the corner of the lead frame. It is larger than the vicinity of the center of each side of the lead frame. Lu
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JPH08306850A (en) * 1995-04-28 1996-11-22 Hitachi Ltd Resin dam type lead frame
US5949132A (en) * 1995-05-02 1999-09-07 Texas Instruments Incorporated Dambarless leadframe for molded component encapsulation
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