TWI479530B - 靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法 - Google Patents
靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法 Download PDFInfo
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- TWI479530B TWI479530B TW098133357A TW98133357A TWI479530B TW I479530 B TWI479530 B TW I479530B TW 098133357 A TW098133357 A TW 098133357A TW 98133357 A TW98133357 A TW 98133357A TW I479530 B TWI479530 B TW I479530B
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- electrostatic lens
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- insulating structure
- insulating
- sheet
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Links
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
- H01J37/12—Lenses electrostatic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/03—Mounting, supporting, spacing or insulating electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/049—Focusing means
- H01J2237/0492—Lens systems
- H01J2237/04924—Lens systems electrostatic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electron Beam Exposure (AREA)
- Shutters For Cameras (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10168208P | 2008-10-01 | 2008-10-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201032258A TW201032258A (en) | 2010-09-01 |
| TWI479530B true TWI479530B (zh) | 2015-04-01 |
Family
ID=41466906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098133357A TWI479530B (zh) | 2008-10-01 | 2009-10-01 | 靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US8198602B2 (https=) |
| EP (1) | EP2406810B1 (https=) |
| JP (1) | JP5420670B2 (https=) |
| KR (1) | KR101649106B1 (https=) |
| CN (1) | CN102232237B (https=) |
| TW (1) | TWI479530B (https=) |
| WO (1) | WO2010037832A2 (https=) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI479530B (zh) * | 2008-10-01 | 2015-04-01 | Mapper Lithography Ip Bv | 靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法 |
| KR101757837B1 (ko) | 2009-05-20 | 2017-07-26 | 마퍼 리쏘그라피 아이피 비.브이. | 듀얼 패스 스캐닝 |
| WO2010134018A2 (en) | 2009-05-20 | 2010-11-25 | Mapper Lithography Ip B.V. | Pattern data conversion for lithography system |
| JP2012033297A (ja) * | 2010-07-29 | 2012-02-16 | Hitachi High-Technologies Corp | 電子銃 |
| US8884255B2 (en) | 2010-11-13 | 2014-11-11 | Mapper Lithography Ip B.V. | Data path for lithography apparatus |
| US9305747B2 (en) | 2010-11-13 | 2016-04-05 | Mapper Lithography Ip B.V. | Data path for lithography apparatus |
| WO2012062854A1 (en) | 2010-11-13 | 2012-05-18 | Mapper Lithography Ip B.V. | Lithography system and method of refracting |
| JP5669636B2 (ja) * | 2011-03-15 | 2015-02-12 | キヤノン株式会社 | 荷電粒子線レンズおよびそれを用いた露光装置 |
| JP2012195096A (ja) * | 2011-03-15 | 2012-10-11 | Canon Inc | 荷電粒子線レンズおよびそれを用いた露光装置 |
| JP5951753B2 (ja) | 2011-04-22 | 2016-07-13 | マッパー・リソグラフィー・アイピー・ビー．ブイ． | リソグラフィ機のクラスタのためのネットワークアーキテクチャおよびプロトコル |
| NL2007604C2 (en) * | 2011-10-14 | 2013-05-01 | Mapper Lithography Ip Bv | Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams. |
| TWI514089B (zh) | 2011-04-28 | 2015-12-21 | 瑪波微影Ｉｐ公司 | 在微影系統中用於轉移基板的設備 |
| NL2006868C2 (en) * | 2011-05-30 | 2012-12-03 | Mapper Lithography Ip Bv | Charged particle multi-beamlet apparatus. |
| TW201330705A (zh) | 2011-09-28 | 2013-07-16 | Mapper Lithography Ip Bv | 電漿產生器 |
| JP2013168396A (ja) * | 2012-02-14 | 2013-08-29 | Canon Inc | 静電型の荷電粒子線レンズ及び荷電粒子線装置 |
| JP2015511069A (ja) * | 2012-03-19 | 2015-04-13 | ケーエルエー−テンカー コーポレイション | 柱で支持されたマイクロ電子レンズアレイ |
| CN104428866A (zh) | 2012-05-14 | 2015-03-18 | 迈普尔平版印刷Ip有限公司 | 带电粒子光刻系统和射束产生器 |
| US10586625B2 (en) | 2012-05-14 | 2020-03-10 | Asml Netherlands B.V. | Vacuum chamber arrangement for charged particle beam generator |
| US11348756B2 (en) | 2012-05-14 | 2022-05-31 | Asml Netherlands B.V. | Aberration correction in charged particle system |
| JP2014063866A (ja) * | 2012-09-21 | 2014-04-10 | Canon Inc | シリコン基板の加工方法及び荷電粒子線レンズの製造方法 |
| US8890092B2 (en) * | 2013-01-28 | 2014-11-18 | Industry—University Cooperation Foundation Sunmoon University | Multi-particle beam column having an electrode layer including an eccentric aperture |
| WO2015024956A1 (en) | 2013-08-23 | 2015-02-26 | Mapper Lithography Ip B.V. | Drying device for use in a lithography system |
| KR20170084240A (ko) | 2014-11-14 | 2017-07-19 | 마퍼 리쏘그라피 아이피 비.브이. | 리소그래피 시스템에서 기판을 이송하기 위한 로드 로크 시스템 및 방법 |
| US9691588B2 (en) | 2015-03-10 | 2017-06-27 | Hermes Microvision, Inc. | Apparatus of plural charged-particle beams |
| WO2016145458A1 (en) * | 2015-03-10 | 2016-09-15 | Hermes Microvision Inc. | Apparatus of plural charged-particle beams |
| US10096450B2 (en) | 2015-12-28 | 2018-10-09 | Mapper Lithography Ip B.V. | Control system and method for lithography apparatus |
| KR102755238B1 (ko) | 2019-04-10 | 2025-01-21 | 에이에스엠엘 네델란즈 비.브이. | 입자 빔 장치에 적합한 스테이지 장치 |
| US10937630B1 (en) * | 2020-04-27 | 2021-03-02 | John Bennett | Modular parallel electron lithography |
| WO2022058253A2 (en) | 2020-09-17 | 2022-03-24 | Asml Netherlands B.V. | Charged particle assessment tool, inspection method |
| EP4020517A1 (en) * | 2020-12-23 | 2022-06-29 | ASML Netherlands B.V. | Electron-optical device |
| JP2024501655A (ja) * | 2020-12-23 | 2024-01-15 | エーエスエムエル ネザーランズ ビー．ブイ． | 電子レンズ |
| EP4020516A1 (en) | 2020-12-23 | 2022-06-29 | ASML Netherlands B.V. | Charged particle optical device, objective lens assembly, detector, detector array, and methods |
| KR20230122666A (ko) * | 2020-12-23 | 2023-08-22 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자 광학 디바이스 |
| EP4092712A1 (en) | 2021-05-18 | 2022-11-23 | ASML Netherlands B.V. | Charged particle optical device and method using it |
| US20230041174A1 (en) | 2021-08-08 | 2023-02-09 | ViaMEMS Technologies, Inc. | Electrostatic devices to influence beams of charged particles |
| CN115304022B (zh) * | 2022-07-07 | 2024-05-24 | 武汉大学 | 基于超低能团簇离子束自组装制备功能纳米结构的方法 |
| CN116230483A (zh) * | 2022-12-21 | 2023-06-06 | 上海精测半导体技术有限公司 | 用于真空环境中隔离高压电极的绝缘装置 |
| WO2024133468A1 (en) * | 2022-12-22 | 2024-06-27 | Asml Netherlands B.V. | Charged particle apparatus, method of projecting charged particles, method of assessing a sample |
| EP4391006A1 (en) * | 2022-12-22 | 2024-06-26 | ASML Netherlands B.V. | Charged particle apparatus, method of projecting charged particles, method of assessing a sample |
| JP2024114189A (ja) * | 2023-02-13 | 2024-08-23 | 株式会社荏原製作所 | 絶縁構造体、静電レンズおよび荷電粒子線装置 |
| US20250112017A1 (en) * | 2023-09-30 | 2025-04-03 | Kla Corporation | Imaging thousands of electron beams during workpiece inspection |
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| JPS63278318A (ja) * | 1987-05-11 | 1988-11-16 | Matsushita Electric Ind Co Ltd | 電極支持体 |
| TW253971B (en) * | 1994-02-21 | 1995-08-11 | Futaba Denshi Kogyo Kk | Method for driving electron gun and cathode ray tube |
| US20020005491A1 (en) * | 2000-03-31 | 2002-01-17 | Takayuki Yagi | Electrooptic system array, charged-particle beam exposure apparatus using the same, and device manufacturing method |
| JP2005214908A (ja) * | 2004-02-02 | 2005-08-11 | Nhv Corporation | 電子線加速器用加速管 |
| US7045794B1 (en) * | 2004-06-18 | 2006-05-16 | Novelx, Inc. | Stacked lens structure and method of use thereof for preventing electrical breakdown |
| TW200837801A (en) * | 2007-01-05 | 2008-09-16 | Varian Semiconductor Equipment | Power supply for an ion implantation system |
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| JPS59211945A (ja) * | 1983-05-18 | 1984-11-30 | Hitachi Ltd | カラ−受像管用電子銃 |
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| JP4459568B2 (ja) | 2003-08-06 | 2010-04-28 | キヤノン株式会社 | マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置 |
| CN101103417B (zh) * | 2003-09-05 | 2012-06-27 | 卡尔蔡司Smt有限责任公司 | 粒子光学系统和排布结构,以及用于其的粒子光学组件 |
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| KR20090052350A (ko) | 2006-09-11 | 2009-05-25 | 전자빔기술센터 주식회사 | 전자 칼럼용 렌즈 조립체 |
| TWI479530B (zh) * | 2008-10-01 | 2015-04-01 | Mapper Lithography Ip Bv | 靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法 |
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2009
- 2009-10-01 TW TW098133357A patent/TWI479530B/zh active
- 2009-10-01 CN CN200980148233.3A patent/CN102232237B/zh active Active
- 2009-10-01 JP JP2011529560A patent/JP5420670B2/ja active Active
- 2009-10-01 WO PCT/EP2009/062788 patent/WO2010037832A2/en not_active Ceased
- 2009-10-01 EP EP09783661.3A patent/EP2406810B1/en active Active
- 2009-10-01 KR KR1020117009983A patent/KR101649106B1/ko active Active
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2011
- 2011-03-31 US US13/076,540 patent/US8198602B2/en not_active Ceased
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2014
- 2014-06-12 US US14/302,522 patent/USRE46452E1/en active Active
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2017
- 2017-06-26 US US15/632,477 patent/US20170309438A1/en not_active Abandoned
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63278318A (ja) * | 1987-05-11 | 1988-11-16 | Matsushita Electric Ind Co Ltd | 電極支持体 |
| TW253971B (en) * | 1994-02-21 | 1995-08-11 | Futaba Denshi Kogyo Kk | Method for driving electron gun and cathode ray tube |
| US20020005491A1 (en) * | 2000-03-31 | 2002-01-17 | Takayuki Yagi | Electrooptic system array, charged-particle beam exposure apparatus using the same, and device manufacturing method |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN102232237A (zh) | 2011-11-02 |
| WO2010037832A4 (en) | 2010-08-12 |
| US20170309438A1 (en) | 2017-10-26 |
| US20110216299A1 (en) | 2011-09-08 |
| TW201032258A (en) | 2010-09-01 |
| JP2012504843A (ja) | 2012-02-23 |
| WO2010037832A3 (en) | 2010-06-10 |
| KR101649106B1 (ko) | 2016-08-19 |
| KR20110081253A (ko) | 2011-07-13 |
| US8198602B2 (en) | 2012-06-12 |
| EP2406810B1 (en) | 2014-09-17 |
| USRE46452E1 (en) | 2017-06-27 |
| CN102232237B (zh) | 2014-09-24 |
| WO2010037832A2 (en) | 2010-04-08 |
| JP5420670B2 (ja) | 2014-02-19 |
| EP2406810A2 (en) | 2012-01-18 |
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