CN102232237B - 静电透镜构件 - Google Patents

静电透镜构件 Download PDF

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Publication number
CN102232237B
CN102232237B CN200980148233.3A CN200980148233A CN102232237B CN 102232237 B CN102232237 B CN 102232237B CN 200980148233 A CN200980148233 A CN 200980148233A CN 102232237 B CN102232237 B CN 102232237B
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CN
China
Prior art keywords
insulating member
conductive plate
electrostatic lens
insulating
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN200980148233.3A
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English (en)
Chinese (zh)
Other versions
CN102232237A (zh
Inventor
斯蒂金.W.H.K.斯廷布林克
约翰.J.康宁格
彼得.维尔特曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
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Mapper Lithopraphy IP BV
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Publication of CN102232237A publication Critical patent/CN102232237A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04924—Lens systems electrostatic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Shutters For Cameras (AREA)
CN200980148233.3A 2008-10-01 2009-10-01 静电透镜构件 Active CN102232237B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10168208P 2008-10-01 2008-10-01
US61/101,682 2008-10-01
PCT/EP2009/062788 WO2010037832A2 (en) 2008-10-01 2009-10-01 Electrostatic lens structure

Publications (2)

Publication Number Publication Date
CN102232237A CN102232237A (zh) 2011-11-02
CN102232237B true CN102232237B (zh) 2014-09-24

Family

ID=41466906

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980148233.3A Active CN102232237B (zh) 2008-10-01 2009-10-01 静电透镜构件

Country Status (7)

Country Link
US (3) US8198602B2 (https=)
EP (1) EP2406810B1 (https=)
JP (1) JP5420670B2 (https=)
KR (1) KR101649106B1 (https=)
CN (1) CN102232237B (https=)
TW (1) TWI479530B (https=)
WO (1) WO2010037832A2 (https=)

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WO2010134018A2 (en) 2009-05-20 2010-11-25 Mapper Lithography Ip B.V. Pattern data conversion for lithography system
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US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
WO2012062854A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
JP5669636B2 (ja) * 2011-03-15 2015-02-12 キヤノン株式会社 荷電粒子線レンズおよびそれを用いた露光装置
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NL2006868C2 (en) * 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
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JP2013168396A (ja) * 2012-02-14 2013-08-29 Canon Inc 静電型の荷電粒子線レンズ及び荷電粒子線装置
JP2015511069A (ja) * 2012-03-19 2015-04-13 ケーエルエー−テンカー コーポレイション 柱で支持されたマイクロ電子レンズアレイ
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US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
KR102755238B1 (ko) 2019-04-10 2025-01-21 에이에스엠엘 네델란즈 비.브이. 입자 빔 장치에 적합한 스테이지 장치
US10937630B1 (en) * 2020-04-27 2021-03-02 John Bennett Modular parallel electron lithography
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JP2024501655A (ja) * 2020-12-23 2024-01-15 エーエスエムエル ネザーランズ ビー．ブイ． 電子レンズ
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KR20230122666A (ko) * 2020-12-23 2023-08-22 에이에스엠엘 네델란즈 비.브이. 하전 입자 광학 디바이스
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CN115304022B (zh) * 2022-07-07 2024-05-24 武汉大学 基于超低能团簇离子束自组装制备功能纳米结构的方法
CN116230483A (zh) * 2022-12-21 2023-06-06 上海精测半导体技术有限公司 用于真空环境中隔离高压电极的绝缘装置
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Also Published As

Publication number Publication date
CN102232237A (zh) 2011-11-02
WO2010037832A4 (en) 2010-08-12
US20170309438A1 (en) 2017-10-26
US20110216299A1 (en) 2011-09-08
TW201032258A (en) 2010-09-01
JP2012504843A (ja) 2012-02-23
WO2010037832A3 (en) 2010-06-10
KR101649106B1 (ko) 2016-08-19
KR20110081253A (ko) 2011-07-13
US8198602B2 (en) 2012-06-12
EP2406810B1 (en) 2014-09-17
USRE46452E1 (en) 2017-06-27
TWI479530B (zh) 2015-04-01
WO2010037832A2 (en) 2010-04-08
JP5420670B2 (ja) 2014-02-19
EP2406810A2 (en) 2012-01-18

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Effective date of registration: 20190529

Address after: Holland Weide Eindhoven

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Patentee before: Mapper Lithography IP B. V.

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