TWI478204B - Plasma processing device and plasma processing method - Google Patents

Plasma processing device and plasma processing method Download PDF

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Publication number
TWI478204B
TWI478204B TW102101095A TW102101095A TWI478204B TW I478204 B TWI478204 B TW I478204B TW 102101095 A TW102101095 A TW 102101095A TW 102101095 A TW102101095 A TW 102101095A TW I478204 B TWI478204 B TW I478204B
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TW
Taiwan
Prior art keywords
value
frequency power
frequency
control range
signal
Prior art date
Application number
TW102101095A
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English (en)
Chinese (zh)
Other versions
TW201409527A (zh
Inventor
森本未知数
大越康雄
大平原勇造
小野哲郎
Original Assignee
日立全球先端科技股份有限公司
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Application filed by 日立全球先端科技股份有限公司 filed Critical 日立全球先端科技股份有限公司
Publication of TW201409527A publication Critical patent/TW201409527A/zh
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Publication of TWI478204B publication Critical patent/TWI478204B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32302—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW102101095A 2012-08-24 2013-01-11 Plasma processing device and plasma processing method TWI478204B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012184847A JP5841917B2 (ja) 2012-08-24 2012-08-24 プラズマ処理装置及びプラズマ処理方法

Publications (2)

Publication Number Publication Date
TW201409527A TW201409527A (zh) 2014-03-01
TWI478204B true TWI478204B (zh) 2015-03-21

Family

ID=50148356

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102101095A TWI478204B (zh) 2012-08-24 2013-01-11 Plasma processing device and plasma processing method

Country Status (5)

Country Link
US (2) US20140057445A1 (enExample)
JP (1) JP5841917B2 (enExample)
KR (1) KR101479639B1 (enExample)
CN (1) CN103632914B (enExample)
TW (1) TWI478204B (enExample)

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* Cited by examiner, † Cited by third party
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KR101503258B1 (ko) * 2014-11-14 2015-03-17 (주) 일하하이텍 플라즈마를 이용한 기판 처리 방법
JP6491888B2 (ja) * 2015-01-19 2019-03-27 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
JP6670697B2 (ja) * 2016-04-28 2020-03-25 東京エレクトロン株式会社 プラズマ処理装置
US10424467B2 (en) * 2017-03-13 2019-09-24 Applied Materials, Inc. Smart RF pulsing tuning using variable frequency generators
JP7061922B2 (ja) * 2018-04-27 2022-05-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN108566717B (zh) * 2018-06-29 2024-07-02 合肥中科离子医学技术装备有限公司 采用微波垂直注入激励等离子体发生装置
CN117293008A (zh) * 2019-08-05 2023-12-26 株式会社日立高新技术 等离子处理装置
US12437968B2 (en) * 2020-09-02 2025-10-07 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
KR20230168145A (ko) * 2022-06-03 2023-12-12 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치, 플라즈마 처리 방법, 압력 밸브 제어 장치, 압력 밸브 제어 방법 및 압력 조정 시스템

Citations (6)

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JPH08250479A (ja) * 1995-03-15 1996-09-27 Hitachi Ltd 表面処理方法及び表面処理装置
JP2001085395A (ja) * 1999-09-10 2001-03-30 Hitachi Ltd 表面処理装置
US20030132198A1 (en) * 1998-02-13 2003-07-17 Tetsuo Ono Method and apparatus for treating surface of semiconductor
US20040157444A1 (en) * 2003-02-10 2004-08-12 Taiwan Semiconductor Manufacturing Company Photoresist intensive patterning and processing
TW200746291A (en) * 2006-02-22 2007-12-16 Hitachi High Tech Corp Plasma processing apparatus and plasma processing method
TW201029064A (en) * 2009-01-30 2010-08-01 Hitachi High Tech Corp Plasma processing apparatus and plasma processing method

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JP3286951B2 (ja) * 1993-07-16 2002-05-27 株式会社アルバック プラズマｃｖｄ成膜方法と装置
EP0653501B1 (en) * 1993-11-11 1998-02-04 Nissin Electric Company, Limited Plasma-CVD method and apparatus
KR100560886B1 (ko) * 1997-09-17 2006-03-13 동경 엘렉트론 주식회사 가스 플라즈마 프로세스를 감시 및 제어하기 위한 시스템및 방법
JP2001085394A (ja) 1999-09-10 2001-03-30 Hitachi Ltd 表面処理方法および表面処理装置
JP2001332534A (ja) * 2000-05-25 2001-11-30 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
US20020123237A1 (en) * 2001-03-05 2002-09-05 Tue Nguyen Plasma pulse semiconductor processing system and method
TW200511430A (en) * 2003-05-29 2005-03-16 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
US20050112891A1 (en) * 2003-10-21 2005-05-26 David Johnson Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation
JP2005130198A (ja) 2003-10-23 2005-05-19 Ulvac Japan Ltd 高周波装置
JP2005214932A (ja) * 2004-02-02 2005-08-11 Daihen Corp 信号処理装置、この信号処理装置を用いた電圧測定装置及び電流測定装置
WO2009140371A2 (en) * 2008-05-14 2009-11-19 Applied Materials, Inc. Method and apparatus for pulsed plasma processing using a time resolved tuning scheme for rf power delivery
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JPH08250479A (ja) * 1995-03-15 1996-09-27 Hitachi Ltd 表面処理方法及び表面処理装置
US20030132198A1 (en) * 1998-02-13 2003-07-17 Tetsuo Ono Method and apparatus for treating surface of semiconductor
JP2001085395A (ja) * 1999-09-10 2001-03-30 Hitachi Ltd 表面処理装置
US20040157444A1 (en) * 2003-02-10 2004-08-12 Taiwan Semiconductor Manufacturing Company Photoresist intensive patterning and processing
TW200746291A (en) * 2006-02-22 2007-12-16 Hitachi High Tech Corp Plasma processing apparatus and plasma processing method
TW201029064A (en) * 2009-01-30 2010-08-01 Hitachi High Tech Corp Plasma processing apparatus and plasma processing method

Also Published As

Publication number Publication date
CN103632914A (zh) 2014-03-12
KR20140026234A (ko) 2014-03-05
JP5841917B2 (ja) 2016-01-13
JP2014044976A (ja) 2014-03-13
TW201409527A (zh) 2014-03-01
CN103632914B (zh) 2016-10-05
KR101479639B1 (ko) 2015-01-12
US10727088B2 (en) 2020-07-28
US20170025289A1 (en) 2017-01-26
US20140057445A1 (en) 2014-02-27

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