TWI472555B - 共聚亞醯胺溶液、共聚亞醯胺、透明薄膜、顯示元件與太陽能電池 - Google Patents
共聚亞醯胺溶液、共聚亞醯胺、透明薄膜、顯示元件與太陽能電池 Download PDFInfo
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- TWI472555B TWI472555B TW100130564A TW100130564A TWI472555B TW I472555 B TWI472555 B TW I472555B TW 100130564 A TW100130564 A TW 100130564A TW 100130564 A TW100130564 A TW 100130564A TW I472555 B TWI472555 B TW I472555B
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- repeating unit
- cyclic aliphatic
- aromatic
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- 229920001721 polyimide Polymers 0.000 title description 12
- 238000000034 method Methods 0.000 title description 11
- 229920000642 polymer Polymers 0.000 title description 5
- 239000004642 Polyimide Substances 0.000 title description 2
- 238000004519 manufacturing process Methods 0.000 title description 2
- 125000003118 aryl group Chemical group 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 27
- 239000000178 monomer Substances 0.000 claims description 20
- 150000001408 amides Chemical class 0.000 claims description 16
- IBOFVQJTBBUKMU-UHFFFAOYSA-N 4,4'-methylene-bis-(2-chloroaniline) Chemical compound C1=C(Cl)C(N)=CC=C1CC1=CC=C(N)C(Cl)=C1 IBOFVQJTBBUKMU-UHFFFAOYSA-N 0.000 claims description 14
- 125000001931 aliphatic group Chemical group 0.000 claims description 11
- 125000004122 cyclic group Chemical group 0.000 claims description 11
- 229920000877 Melamine resin Polymers 0.000 claims description 10
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 9
- 230000000903 blocking effect Effects 0.000 claims description 6
- 239000004952 Polyamide Substances 0.000 claims description 4
- 229920002647 polyamide Polymers 0.000 claims description 4
- 238000007334 copolymerization reaction Methods 0.000 claims description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 6
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 claims 1
- 125000001072 heteroaryl group Chemical group 0.000 claims 1
- 239000010408 film Substances 0.000 description 40
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 20
- 239000012965 benzophenone Substances 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 16
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- 239000006096 absorbing agent Substances 0.000 description 13
- -1 benzotriazole compound Chemical class 0.000 description 12
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 9
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 9
- 150000004984 aromatic diamines Chemical class 0.000 description 9
- 239000007787 solid Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 125000001033 ether group Chemical group 0.000 description 8
- 238000003786 synthesis reaction Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
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- 238000011161 development Methods 0.000 description 6
- 230000018109 developmental process Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000006750 UV protection Effects 0.000 description 5
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 5
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- 238000002360 preparation method Methods 0.000 description 5
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- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229930003836 cresol Natural products 0.000 description 4
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
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- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
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- 229940124530 sulfonamide Drugs 0.000 description 3
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- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 2
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 2
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical group CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 2
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 2
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 2
- HYDATEKARGDBKU-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]phenoxy]aniline Chemical group C1=CC(N)=CC=C1OC1=CC=C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 HYDATEKARGDBKU-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 2
- CJYIPJMCGHGFNN-UHFFFAOYSA-N bicyclo[2.2.1]heptane-2,3,5,6-tetracarboxylic acid Chemical compound C1C2C(C(O)=O)C(C(=O)O)C1C(C(O)=O)C2C(O)=O CJYIPJMCGHGFNN-UHFFFAOYSA-N 0.000 description 2
- XQBSPQLKNWMPMG-UHFFFAOYSA-N bicyclo[2.2.2]octane-2,3,5,6-tetracarboxylic acid Chemical compound C1CC2C(C(O)=O)C(C(=O)O)C1C(C(O)=O)C2C(O)=O XQBSPQLKNWMPMG-UHFFFAOYSA-N 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 150000003997 cyclic ketones Chemical class 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- ZHDTXTDHBRADLM-UHFFFAOYSA-N hydron;2,3,4,5-tetrahydropyridin-6-amine;chloride Chemical compound Cl.NC1=NCCCC1 ZHDTXTDHBRADLM-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
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- 238000001228 spectrum Methods 0.000 description 2
- 238000010189 synthetic method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- IHWDSEPNZDYMNF-UHFFFAOYSA-N 1H-indol-2-amine Chemical compound C1=CC=C2NC(N)=CC2=C1 IHWDSEPNZDYMNF-UHFFFAOYSA-N 0.000 description 1
- ISPYQTSUDJAMAB-UHFFFAOYSA-N 2-chlorophenol Chemical compound OC1=CC=CC=C1Cl ISPYQTSUDJAMAB-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 description 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 1
- NVKGJHAQGWCWDI-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical compound FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F NVKGJHAQGWCWDI-UHFFFAOYSA-N 0.000 description 1
- FJVIHKKXPLPDSV-UHFFFAOYSA-N 4-phenoxybenzene-1,2-diamine Chemical compound C1=C(N)C(N)=CC=C1OC1=CC=CC=C1 FJVIHKKXPLPDSV-UHFFFAOYSA-N 0.000 description 1
- QHHKLPCQTTWFSS-UHFFFAOYSA-N 5-[2-(1,3-dioxo-2-benzofuran-5-yl)-1,1,1,3,3,3-hexafluoropropan-2-yl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)(C(F)(F)F)C(F)(F)F)=C1 QHHKLPCQTTWFSS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000032912 absorption of UV light Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- BKDVBBSUAGJUBA-UHFFFAOYSA-N bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid Chemical compound C1=CC2C(C(O)=O)C(C(=O)O)C1C(C(O)=O)C2C(O)=O BKDVBBSUAGJUBA-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 125000006159 dianhydride group Chemical group 0.000 description 1
- LTYMSROWYAPPGB-UHFFFAOYSA-O diphenylsulfanium Chemical compound C=1C=CC=CC=1[SH+]C1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-O 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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- 239000003094 microcapsule Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
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- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- OAXARSVKYJPDPA-UHFFFAOYSA-N tert-butyl 4-prop-2-ynylpiperazine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCN(CC#C)CC1 OAXARSVKYJPDPA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1075—Partially aromatic polyimides
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
- C09K2323/02—Alignment layer characterised by chemical composition
- C09K2323/027—Polyimide
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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Description
本發明係有關於一種高分子,特別是有關於一種共聚亞醯胺溶液、共聚亞醯胺、透明薄膜、顯示元件與太陽能電池。
軟性顯示器的應用受到各界的矚目,在國內外各大廠積極研發下,軟性顯示器技術的開發逐漸趨於成熟,各大廠技術開發重點已由被動式顯示器躍升為主動式軟性顯示器。由於軟性顯示器具有輕巧、攜帶方便、不易破碎、耐衝擊、可捲繞性與穿戴性等優越的特性,已成為下世代顯示器的發展新趨勢。軟性顯示器的發展與基板材料有直接的關係,不同顯示介質對於基板材料的要求不同,因此,基板材料的開發,除高耐熱且可通過TFT製程特性外,如何增加UV cut off和UV光下耐黃變的特性,達到遮蔽紫外光進而提升顯示器的壽命,在透明基板的開發上為相當重要的課題。
傳統聚亞醯胺塑膠基板具有耐高溫的特性,不但製程溫度可以超過200℃,又有較佳的尺寸安定性,而美中不足的地方是聚亞醯胺基板為黃色,很難達到透明無色。另外,傳統聚亞醯胺塑膠基板需要添加UV吸收劑才能有UV阻隔(UV cut off)的功效。
因此,如何透過現有具高玻璃轉移溫度(Tg)之軟
式透明塑膠薄膜材料經化學修飾或特殊製程加工,來開發提昇耐熱性(300℃)、尺寸安定性、耐化性以及耐紫外光特性的新穎軟式塑膠薄膜材料已成為趨勢。
本發明係有關於一種共聚亞醯胺溶液、共聚亞醯胺、透明薄膜、顯示元件與太陽能電池。另外,在製備時可更添加一UV吸收劑,其具有更好的耐UV性質。根據本發明之一實施,係提出一種共聚亞醯胺溶液,包括溶劑與共聚亞醯胺。共聚亞醯胺具有化學式(D)的重複單元與化學式(J)的重複單元至少一者,並具有化學式(Q)的重複單元與化學式(T)的重複單元至少一者。
B和B’其中之一者為一環狀脂肪族,另一者為芳香族。環狀脂肪族比芳香族的莫耳比值係1~4。
A和A’為相同或相異芳香族雙胺單體。A和A’至少一個為含醚基之芳香族雙胺單體。
B和B’其中之一者的環狀脂肪族係包括:
B和B’其中之一者的芳香族係包括:
A和A’係獨立地選自:
根據本發明之一實施,係提出一種共聚亞醯胺。共聚亞醯胺具有化學式(D)的重複單元與化學式(J)的重複單元至少一者,並具有化學式(Q)的重複單元與化學式(T)的重複單元至少一者。
B和B’其中之一者為一環狀脂肪族,另一者為芳
香族。環狀脂肪族比芳香族的莫耳比值係1~4。
A和A’為相同或相異芳香族雙胺單體。A和A’至少一個為含醚基之芳香族雙胺單體。
B和B’其中之一者的環狀脂肪族係包括:
B和B’其中之一者的芳香族係包括:
A和A’係獨立地選自:
根據本發明之一實施,提出一種透明薄膜,係由共聚亞醯胺製成。共聚亞醯胺具有化學式(D)的重複單
元與化學式(J)的重複單元至少一者,並具有化學式(Q)的重複單元與化學式(T)的重複單元至少一者。
B和B’其中之一者為一環狀脂肪族,另一者為芳香族。環狀脂肪族比芳香族的莫耳比值係1~4。
A和A’為相同或相異芳香族雙胺單體。A和A’至少一個為含醚基之芳香族雙胺單體。
B和B’其中之一者的環狀脂肪族係包括:
B和B’其中之一者的芳香族係包括:
A和A’係獨立地選自:
根據本發明之一實施,係提出一種顯示元件。顯示元件係包括一第一基板與一第二基板。第一和第二基板係相對設置。第一和第二基板其中之一係由一共聚亞醯胺製成。共聚亞醯胺具有化學式(D)的重複單元與化學式(J)的重複單元至少一者,並具有化學式(Q)的重複單元與化學式(T)的重複單元至少一者。
B和B’其中之一者為一環狀脂肪族,另一者為芳香族。環狀脂肪族比芳香族的莫耳比值係1~4。
A和A’為相同或相異芳香族雙胺單體,其中A和A’至少一個為含醚基之芳香族雙胺單體。
B和B’其中之一者的環狀脂肪族係包括:
B和B’其中之一者的芳香族係包括:
A和A’係獨立地選自:
根據本發明之一實施,係提出一種太陽能電池。太陽能電池包括第一薄膜、第一電極、元件層與第二電極。第一電極位於第一薄膜上。元件層位於第一電極與第二電極之間。第一薄膜係由共聚亞醯胺製成。共聚亞醯胺具有化學式(D)的重複單元與化學式(J)的重複單元至少一者,並具有化學式(Q)的重複單元與化學式(T)的重複單元至少一者。
B和B’其中之一者為一環狀脂肪族,另一者為芳香族。環狀脂肪族比芳香族的莫耳比值係1~4。
A和A’為相同或相異芳香族雙胺單體。A和A’至少一個為含醚基之芳香族雙胺單體。
B和B’其中之一者的環狀脂肪族係包括:
B和B’其中之一者的芳香族係包括:
A和A’係獨立地選自:
為讓本發明之上述目的、特徵及優點能更明顯易懂,下文特舉實施例,並配合所附圖式,作詳細說明如下:
共聚亞醯胺的製造方法包括將溶劑、環狀脂肪族二酸酐、芳香族二酸酐,一種或一種以上之芳香族二胺混合,以高溫合成方式聚合成共聚亞醯胺溶液,其中,至少一種芳香族二胺為含醚基之芳香族二胺,且環狀脂肪族二酸酐比芳香族二酸酐的莫耳比值係1~4。
環狀脂肪族二酸酐例如包括:(雙環[2.2.2]辛-7-烯-2,3,5,6-四羧酸二酐;Bicyclo[2,2,2]oct-7-ene-2,3,5,6-tetracarboxylic Dianhydride)、(雙環[2.2.2]辛烷-2,3,5,6-四羧酸二酐;Bicyclo[2.2.2]octane-2,3,5,6-tetracarboxylic2,3:5,6-dianhydride)或(雙環[2.2.1]庚烷-2,3,5,6-四羧酸二酐;Bicyclo[2.2.1]heptane-2,3,5,6-tetracarboxylic2,3:5,6-dianhydride)。
芳香族二酸酐例如包括:(4,4'-氧雙鄰苯二甲酸酐;4,4'-oxydiphthalic anhydride)或(4,4'-(六氟異丙烯)二酞酸酐;
4,4’-(Hexafluoroisopropylidene)Diphthalic anhydride)。
芳香族二胺例如包括:(4,4-二氨基二苯醚;4,4-Diaminodiphenyl ether)、(3,4'-二氨基二苯醚;3,4-Diaminodiphenyl ether)、(2,2'-雙[4-(4-氨基苯氧基苯基)]丙烷;2,2-Bis[4-(4-aminophenoxy)phenyl]
propane)、(2,2-雙[4-(4-氨基苯氧基)苯基]六氟丙烷;2,2-Bis[4-(4-aminophenoxy)phenyl]hexafluoropropane)、(4,4'-雙(3-氨基苯氧基)二苯基碸;4,4'-Bis(3-Amino phenoxy)Diphenyl Sulfone)、(4,4'-二(4-氨基苯氧基)聯苯;4,4-Bis(4-aminophenoxy)biphenyl)、(1,3-雙(4'-氨基苯氧基)苯;1,3-Bis(4-aminophenoxy)benzene)、(1,3-雙(3-氨基苯氧基)苯;1,3-Bis(3-aminophenoxy)benzene);(2,2'-二甲基-4,4'-二氨基聯苯;2,2’-dimethyl-4,4’-diaminobiphenyl)或(2,2’-二三氟甲基聯苯胺;2,2’-Bis(triflroromethyl)benzidine)。
溶劑例如是一苯酚類溶劑、一環酮類溶劑、一醯胺類溶劑、或上述之組合。苯酚類溶劑包括例如甲酚(m-cresol)、氯酚(Cl-phenol)。環酮類溶劑包括例如環戊酮(Cyclopentanone)、γ-丁基內酯(γ-butylactone)或N-甲基吡咯烷酮(NMP)。醯胺類溶劑包括例如N,N-二甲基乙醯胺(dimethylacetamide;DMAC)。
上述共聚亞醯胺溶液中的共聚亞醯胺包括化學式(D)的重複單元與化學式(J)的重複單元至少一者,並具有化學式(Q)的重複單元與化學式(T)的重複單元至少一者。
B和B’其中之一者為一環狀脂肪族,另一者為芳香族,環狀脂肪族比芳香族的莫耳比值係1~4,A和A’可為相同或相異芳香族雙胺單體,其中A和A’至少一個為含醚基之芳香族雙胺單體。
實施例中,B和B’其中之一者的環狀脂肪族例如是:
實施例中,B和B’其中之一者的芳香族例如是包括:
實施例中,A和A’例如是獨立地選自:
共聚亞醯胺溶液的固含量為5至35%,或5至20%。共聚亞醯胺溶液的黏度係1cp至50000cp,100cp至20000cp,1000cp至15000cp,或2000cp至10000cp。
再者,共聚亞醯胺溶液中,可更添加一UV吸收劑。UV吸收劑例如是苯并三氮唑化合物(benzotriazole compound)、或二苯甲酮化合物(benzophenone compound),或其他UV吸收劑。實施例中,UV吸收劑之添加量約為0.5至5wt%。
上述共聚亞醯胺溶液塗佈在基板上並乾燥後可形成薄膜。該薄膜為無色透明且可作為UV阻隔膜、及UV阻隔膜之應用。實施例之薄膜在紫外光波長為395nm~410nm時,具有至少50%的UV阻隔率(50% cut off)且達到無色、高耐熱(Tg>300℃)、良好的撓曲特性、抗化性佳(光阻、草酸、顯影劑與stripper)、可阻隔UV、和耐黃化等優異性質。另外,在製備時更可於共聚亞醯胺溶液中添加一UV吸收劑,其具有更好的耐UV性質。應用此薄膜之電子產品可透過遮蔽紫外光來提升應用元件的壽命。
根據實施例由共聚亞醯胺形成的薄膜,只要是需要遮蔽紫外光的元件都可應用,例如是應用在一軟性電子元件上,如軟性顯示器,以做為軟性透明無色UV阻隔膜;或應用在太陽能電池、抗UV太陽眼鏡等,或是做為隔熱紙可應用汽車或房屋窗戶上,其應用領域十分廣泛。
由共聚亞醯胺形成的薄膜可應用之軟性電子元件,例如軟性顯示元件,包括粒子顯示器(particle display)、液晶顯示器(LCD)或微機電系統(MEMS)顯示器。粒子顯示器可包括電激發光顯示器(electrochromic display,ECD)或電泳顯示器(electro-phoretic display,EPD);而LCD主要是膽固醇液晶(ChLCD)或專有的雙穩態(bistable)扭曲向列(twisted-nematic,TN)LCD等等。
以下係提出一種顯示元件,做為應用說明。根據
前述實施例所提出一種由共聚亞醯胺形成的薄膜可應用於一顯示元件。顯示元件係包括相對設置之一第一基板、一第二基板,和設置於第一、第二基板之間的一介質層,且該第一和該第二基板其中之一具有由共聚亞醯胺形成的薄膜。
實施例中,上述介質層例如是包括液晶分子、微膠囊電泳或高分子,例如向列型液晶、層列型液晶、膽固醇液晶、電子墨水、螢光小分子或螢光高分子。
另外,上述實施例所提出之由共聚亞醯胺形成的薄膜,亦可應用在綠能科技-太陽能電池(Solar cell)上。薄膜型太陽能電池有許多不同的類型,如非晶矽(a-Si)、碲化鎘(CdTe)、銅銦鎵硒化合物(Copper Indium Gallium Selenide,CIGS)以及多接面型式的薄膜太陽能電池,在此係以含銅銦鎵硒四元素(簡稱CIGS)之光電池計作說明。第1圖係為一銅銦鎵二硒太陽能電池(Copper Indium Gallium Diselenide Solar Cells)之結構示意圖。如第1圖所示,CIGS太陽能電池包括:在一基板101上濺鍍一第一電極(內部電極層或底部電極(back contact))102,一般基板101材料例如是玻璃、金屬薄片、高分子等,內部電極層102材料通常是鉬(Mo);在內部電極層102的上方則形成一吸收層(Absorbing layer)103,其材料為銅銦鎵二硒(CuIn1-X
GaX
Se2
),可用真空或非真空方法形成;在吸收層103的上方係形成一緩衝層(buffer layer)104,通
常以化學浴沉積法(Chemical Bath Deposition)沉積硫化鉻(CdS)材料而成;在緩衝層104的上方係形成一透明導電層(window layer)105,其材料例如是氧化鋅(ZnO)或氧化銦錫(ITO);在透明導電層105的上方係形成一抗反射層(Antireflection layer)106,其材料通常是氟化鎂(MgF2
);之後在抗反射層106上方,例如蒸鍍上鎳/鋁(Ni/Al),以形成一第二電極(外部電極或頂部電極(front contact))107。位於第一電極102與第二電極107之間的各種薄膜例如吸收層103、緩衝層104、透明導電層105與抗反射層106可構成元件層。
如第1圖中,第一電極102的厚度約在0.5~1.5μm,吸收層103的厚度約在1.5~2.0μm,緩衝層104的厚度約在0.03~0.0.5μm,透明導電層105的厚度約在0.5~1.5μm,抗反射層106的厚度約在0.1μm左右。
由共聚亞醯胺形成的薄膜可應用於如第1圖所示之太陽能電池(Solar cell)的位置如下:(A)實施例之UV阻隔膜可放置在電池最上層,如抗反射層106上方,以作為元件層中最上面的保護膜(阻隔UV);或是(B)直接作為基板使用,以取代第1圖中的基板101。
<實施例之共聚亞醯胺、其合成方法及相關實驗>
聚亞醯胺的合成為一典型的聚縮合反應(polycondensation),一般其合成方法有二種。第一種方法是分成兩個階段進行,首先,將二胺(diamine)與二酸酐(dianhydride)單體置於極性溶劑中進行反應,以
形成聚亞醯胺的前驅物(precursor)聚醯胺酸(poly(amic acid),PAA)。之後,以高溫法(攝氏300~400度)或化學法進行亞醯胺化(imidization)反應,使其脫水閉環,轉化成為聚亞醯胺。第二種方法則是將二胺(diamine)與二酸酐(dianhydride)單體置於溶劑中反應,升溫至回流溫度反應,即形成聚亞醯胺。在實施例中,由於添加了包含醚基之芳香族二胺,可應用高溫合成方式聚合成可溶性聚亞醯胺溶液(即第二種方法)。
第一種方法
第二種方法
以下係提出六個實施例和二個比較例之聚亞醯胺之合成。在完成聚亞醯胺薄膜之製備後,並進行穿透度和抗UV等測試。
(實施例1)
聚亞醯胺ODPA(0.3)-B1317(0.7)-ODA(0.7)-BAPPm(0.3)的合成
在室溫下,使用三頸瓶並通以氮氣,將0.0118mole的BAPPm與0.0275mole的ODA等二苯胺溶入119.23g的甲酚(m-cresol)中,待BAPPm與ODA完全溶解後再將0.0120mole的ODPA與0.0281mole的B1317二酸酐加入,直至B1317完全溶解後,繼續攪拌1小時,而形成黏稠狀之聚醯胺酸溶液。然後加熱至220℃ 3小時,在這反應過程中同時用除水裝置將水排除。將反應液滴入甲醇中使聚亞醯胺沉澱成絲狀,於真空烘箱中烘乾12小時,將絲狀之聚亞醯胺溶入二甲基乙醯胺(Dimethylacetamide,DMAc)中,整體
固含量為15%,黏度2000cp至6000cp。將其成膜於玻璃上,經烘乾後即可得到一聚亞醯胺薄膜。
(實施例2)
聚亞醯胺ODPA(0.3)-B1317(0.7)-ODA(0.7)-BAPPm(0.3)添加benzophenone compound之配方
將UV吸收劑二苯甲酮化合物(benzophenone compound)溶於乙酸乙酯中,整體固含量為10%,再取實施例1之聚亞醯胺溶液與之混和,其二苯甲酮與聚亞醯胺之重量百分比為2wt%。將其成膜於玻璃上,經烘乾後即可得到一聚亞醯胺/二苯甲酮薄膜。
(實施例3)
聚亞醯胺6FDA(0.3)-B1317(0.7)-ODA(0.7)-BAPPm(0.3)的合成
在室溫下,使用三頸瓶並通以氮氣,將0.0118mole的BAPPm與0.0275mole的ODA等二苯胺溶入128.38g的m-cresol中,待BAPPm與ODA完全溶解後再將0.0120mole的6FDA與0.0281mole的B1317二酸酐加入,直至B1317完全溶解後,繼續攪拌約1小時,而形成黏稠狀之聚醯胺酸溶液。然後加熱至220℃約3小時,在這反應過程中同時用除水裝置將水排除。將反應液滴入甲醇中使聚亞醯胺沉澱成絲狀,於真空烘箱中烘乾12小時,將絲狀之聚亞醯胺溶入DMAc中,整體固含量為15%,黏度2000cp至6000cp。將其成膜於玻璃上,經烘乾後即可得到一聚亞醯胺薄膜。
BAPPm、ODA、B1317之化學式請參照實施例1。
(實施例4)
聚亞醯胺6FDA(0.3)-B1317(0.7)-ODA(0.7)-BAPPm(0.3)添加benzophenone compound之配方
將UV吸收劑二苯甲酮化合物(benzophenone
compound)溶於乙酸乙酯中,整體固含量為10%,再取實施例3之聚亞醯胺溶液與之混和,其benzophenone與聚亞醯胺之重量百分比為2wt%。將其成膜於玻璃上,經烘乾後即可得到一聚亞醯胺/benzophenone薄膜。
(實施例5)
聚亞醯胺ODPA(0.2)-B1317(0.8)-ODA(0.7)-BAPPm(0.3)的合成
在室溫下,使用三頸瓶並通以氮氣,將0.0118mole的BAPPm與0.0275mole的ODA等二苯胺溶入117.30g的甲酚(m-cresol)中,待BAPPm與ODA完全溶解後再將0.00803mole的ODPA與0.0321mole的B1317二酸酐加入,直至B1317完全溶解後,繼續攪拌1小時,而形成黏稠狀之聚醯胺酸溶液。然後加熱至220℃ 3小時,在這反應過程中同時用除水裝置將水排除。將反應液滴入甲醇中使聚亞醯胺沉澱成絲狀,於真空烘箱中烘乾12小時,將絲狀之聚亞醯胺溶入二甲基乙醯胺(Dimethylacetamide,DMAc)中,整體固含量為15%,黏度2000cp至6000cp。將其成膜於玻璃上,經烘乾後即可得到一聚亞醯胺薄膜。
(實施例6)
聚亞醯胺ODPA(0.5)-B1317(0.5)-ODA(0.7)-BAPPm(0.3)的合成
在室溫下,使用三頸瓶並通以氮氣,將0.0118mole的BAPPm與0.0275mole的ODA等二苯胺溶入121.94g的甲酚(m-cresol)中,待BAPPm與ODA完全溶解後再將0.0200mole的ODPA與0.0200mole的B1317二酸酐加入,直至B1317完全溶解後,繼續攪拌1小時,而形成黏稠狀之聚醯胺酸溶液。然後加熱至220℃ 3小時,在這反應過程中同時用除水裝置將水排除。將反應液滴入甲醇中使聚亞醯胺沉澱成絲狀,於真空烘箱中烘乾12小時,將絲狀之聚亞醯胺溶入二甲基乙醯胺(Dimethylacetamide,DMAc)中,整體固含量為15%,黏度2000cp至6000cp。將其成膜於玻璃上,經烘乾後即可得到一聚亞醯胺薄膜。
(比較例1)
聚亞醯胺B1317-BAPB(0.7)-BAPPm(0.3)的合成
在室溫下,使用三頸瓶並通以氮氣,將0.0118mole的BAPPm與0.0275mole的BAPB等二苯胺溶入141.14g的m-cresol中,待BAPPm與BAPB完全溶解後再將0.040mole的B1317二酸酐加入,直至B1317完全溶解後,繼續攪拌1小時,而形成黏稠狀之聚醯胺酸溶液。然後加熱至220℃約3小時,在這反應過程中同時用除水裝置將水排除。將反應液滴入甲醇中使聚亞醯胺沉澱成絲狀,於真空烘箱中烘乾12小時,將絲狀之聚亞醯胺溶入DMAc中,整體固含量為15%。將其成膜於玻璃上,經烘乾後即可得到一聚亞
醯胺薄膜。
BAPPm、B1317之化學式請參照實施例1。
(比較例2)
聚亞醯胺B1317-BAPB(0.7)-BAPPm(0.3)添加benzophenone compound之配方
將將UV吸收劑二苯甲酮化合物(benzophenone compound)溶於乙酸乙酯中,整體固含量為10%,再取比較例1之聚亞醯胺溶液與之混和,其benzophenone與聚亞醯胺之重量百分比為2wt%。將其成膜於玻璃上,經烘乾後即可得到一聚亞醯胺/benzophenone薄膜
表一係列出實施例1~6及比較例1~2的配方整理。在完成薄膜製備後,係對各樣品進行穿透度和抗UV等試驗。在穿透度試驗中,係以UV光譜儀-儀器機型Perkin Elemer Lambda 900進行量測。請參照第2圖,其繪示各實施例與比較例的紫外光可見光(ultraviolet-visible;UV-VIS)光譜圖。X軸為測試各樣品之光源的波長,Y軸為光源通過測試樣品的穿透率。曲線A、B、C、D、E、F分別為根據實施例1~6
所製備之聚亞醯胺薄膜的測試結果,曲線G、H分別為根據比較例1~2所製備之聚亞醯胺薄膜的測試結果。根據第2圖之結果,實施例1~6及比較例1~2的樣品在穿透率為50%時(50% Cut-off),其光源波長分別為405nm、400nm、396nm、409nm、401nm、408nm、328nm、394nm,亦列於表一。
如第2圖和表一所示,根據測試結果,相較於比較例1~2的樣品薄膜,實施例1~6的樣品薄膜具有更好的阻隔UV(UV Cut)的效果,其差別在於,比較例1~2僅利用環狀脂肪族二酸酐來製備聚亞醯胺薄膜,而實施例1~6中二酸酐的的部份係利用環狀脂肪族二酸酐和芳香族二酸酐等兩種二酸酐來製備聚亞醯胺薄膜,芳香族二酸酐的加入可增加高分子對於UV光的吸收。再者,實施例中是否添加UV吸收劑二苯甲酮化合物(如觀察實施例1和2,或觀察實施例3和4),則樣品薄膜的UV阻隔效果都很好,影響不大。
在完成薄膜製備後,亦對根據實施例1~6及比較例1~2所製備的各薄膜樣品進行抗UV試驗(即加速老化實驗)。在抗UV試驗中,係利用UV老化機-機型QUV系列(燈管UVA-351,波長320~400nm,0.45W/m2@340nm,其模擬太陽光透過玻璃所造成的影響,較接近室外結果),對各樣品進行持續照UV光。並在連續照光100小時、200小時、400小時、500小時、1000小時量測各薄膜樣品之黃化指數(yellow index),其結果係列於表二。
其中,實施例1~6及比較例1~2所製備的各薄膜樣品厚度分別為41μm、40μm、33μm、26μm、35μm、35μm、38μm、和35μm。
如表二所示之測試結果,在相同的連續照光時數下,比較例1~2之薄膜樣品比起實施例1~6之薄膜樣品具有更高的黃化指數。黃化指數越大,代表越不耐UV老化,即越不耐黃變。因此,依據實施例1~6之薄膜樣品所製備的聚亞醯胺薄膜皆具有良好的耐UV和耐黃變的特性。再者,從測試結果可知,在相同的連續照光時數下,額外添加了UV吸收劑二苯甲酮化合物所製成的薄膜樣品比起未添加UV吸收劑的所製成的薄膜樣品(如比較實施例1和2、或比較實施例3和4),發現其黃化指數更低些。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可作更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
101‧‧‧基板
102‧‧‧第一電極
103‧‧‧吸收層
104‧‧‧緩衝層
105‧‧‧透明導電層
106‧‧‧抗反射層
107‧‧‧第二電極
第1圖係為一銅銦鎵二硒太陽能電池(Copper Indium Gallium Diselenide Solar Cells)之結構示意圖。
第2圖繪示實施例1~6與比較例1~2的紫外光可見光(ultraviolet-visible;UV-VIS)光譜圖。
Claims (4)
- 一種顯示元件,係包括:一第一基板與一第二基板,該第一和該第二基板係相對設置,且該第一和該第二基板其中之一係由一共聚亞醯胺製成,該共聚亞醯胺具有化學式(D)的重複單元與化學式(J)的重複單元至少一者,並具有化學式(Q)的重複單元與化學式(T)的重複單元至少一者,
- 如申請專利範圍第1項所述之顯示元件,其中由該共聚亞醯胺製成的該第一基板或該第二基板係用作一UV阻隔膜,該UV阻隔膜在紫外光波長為 395nm~410nm時,具有至少50%的UV阻隔率(50% cut off)。
- 一種太陽能電池,包括:一第一薄膜;一第一電極,位於該第一薄膜上;一元件層;以及一第二電極,其中該元件層位於該第一電極與該第二電極之間,該第一薄膜係由一共聚亞醯胺製成,該共聚亞醯胺具有化學式(D)的重複單元與化學式(J)的重複單元至少一者,並具有化學式(Q)的重複單元與化學式(T)的重複單元至少一者,
- 如申請專利範圍第3項所述之太陽能電池,其中該元件層包括位於最外側的一第二薄膜,該第二薄膜係由一共聚亞醯胺製成,該共聚亞醯胺具有化學式(D)的重複單元與化學式(J)的重複單元至少一者,並具有化學式(Q)的重複單元與化學式(T)的重複單元至少一者,
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TW200844471A (en) * | 2007-05-14 | 2008-11-16 | Ind Tech Res Inst | Transparent substrate with low birefringence |
Also Published As
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CN102532895B (zh) | 2015-08-19 |
CN102532895A (zh) | 2012-07-04 |
US20120160317A1 (en) | 2012-06-28 |
TW201226444A (en) | 2012-07-01 |
US8859715B2 (en) | 2014-10-14 |
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