TWI470769B - 晶片封裝體及其形成方法 - Google Patents

晶片封裝體及其形成方法 Download PDF

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Publication number
TWI470769B
TWI470769B TW100145029A TW100145029A TWI470769B TW I470769 B TWI470769 B TW I470769B TW 100145029 A TW100145029 A TW 100145029A TW 100145029 A TW100145029 A TW 100145029A TW I470769 B TWI470769 B TW I470769B
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Taiwan
Prior art keywords
semiconductor substrate
conductive structure
gate
substrate
source
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TW100145029A
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English (en)
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TW201225259A (en
Inventor
Ying Nan Wen
Ho Yin Yiu
Yen Shih Ho
Shu Ming Chang
Chien Hung Liu
Shih Yi Lee
Wei Chung Yang
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Xintec Inc
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Publication of TW201225259A publication Critical patent/TW201225259A/zh
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Publication of TWI470769B publication Critical patent/TWI470769B/zh

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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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Description

晶片封裝體及其形成方法
本發明係有關於晶片封裝體，且特別是有關於金氧半場效電晶體晶片封裝體。
晶片封裝製程是形成電子產品過程中之一重要步驟。晶片封裝體除了將晶片保護於其中，使免受外界環境污染外，還提供晶片內部電子元件與外界之電性連接通路。
使晶片封裝體之尺寸縮小化，並進一步提升晶片封裝體之效能成為重要課題。
本發明一實施例提供一種晶片封裝體，包括：一半導體基底；一汲極區及一源極區，位於該半導體基底中；一閘極，位於該半導體基底之上或至少部分埋於該半導體基底中；一汲極導電結構、一源極導電結構、及一閘極導電結構，設置於該半導體基底之上，且分別電性連接該汲極區、該源極區、及該閘極；一第二半導體基底，橫向設置於該半導體基底之一側；一第二汲極區及一第二源極區，位於該第二半導體基底中，其中該第二汲極區電性連接該半導體基底中之該源極區；一第二閘極，位於該第二半導體基底之上或至少部分埋於該第二半導體基底之中；以及一第二源極導電結構及一第二閘極導電結構，設置於該第二半導體基底之上，且分別電性連接該第二源極區及該第二閘極，其中該汲極導電結構、該源極導電結構、該閘極導電結構、該第二源極導電結構、及該第二閘極導電結構之端點係大抵共平面。
本發明一實施例提供一種晶片封裝體的形成方法，包括：提供一半導體基底，具有兩相鄰之一金氧半場效電晶體及一第二金氧半場效電晶體，其中該金氧半場效電晶體具有一汲極區、一源極區、及一閘極，而該第二金氧半場效電晶體具有一第二汲極區、一第二源極區、及一第二閘極；於該半導體基底之一表面上設置一汲極導電結構、一源極導電結構、一閘極導電結構、一第二源極導電結構、及一第二閘極導電結構，分別電性連接至該汲極區、該源極區、該閘極、該第二源極區、及該第二閘極其中該汲極導電結構、該源極導電結構、該閘極導電結構、該第二源極導電結構、及該第二閘極導電結構之端點大抵共平面；以及將該源極區電性連接至該第二汲極區。
本發明一實施例提供一種晶片封裝體的形成方法，包括：提供一半導體基底，具有一汲極區、一源極區、及一閘極；提供一第二半導體基底，具有一第二汲極區、一第二源極區、及一第二閘極；將該第二半導體基底橫向設置於該半導體基底之一側；於該半導體基底之一表面上設置一汲極導電結構、一源極導電結構、及一閘極導電結構，分別電性連接至該汲極區、該源極區、及該閘極；於該第二半導體基底之一表面上設置一第二源極導電結構及一第二閘極導電結構，分別電性連接至該第二源極區及該第二閘極，其中該汲極導電結構、該源極導電結構、該閘極導電結構、該第二源極導電結構、及該第二閘極導電結構之端點大抵共平面；以及將該源極區電性連接至該第二汲極區。
以下將詳細說明本發明實施例之製作與使用方式。然應注意的是，本發明提供許多可供應用的發明概念，其可以多種特定型式實施。文中所舉例討論之特定實施例僅為製造與使用本發明之特定方式，非用以限制本發明之範圍。此外，在不同實施例中可能使用重複的標號或標示。這些重複僅為了簡單清楚地敘述本發明，不代表所討論之不同實施例及/或結構之間必然具有任何關連性。再者，當述及一第一材料層位於一第二材料層上或之上時，包括第一材料層與第二材料層直接接觸或間隔有一或更多其他材料層之情形。
本發明一實施例之晶片封裝體可用以封裝金氧半場效電晶體晶片，例如是功率模組晶片。然其應用不限於此，例如在本發明之晶片封裝體的實施例中，其可應用於各種包含主動元件或被動元件(active or passive elements)、數位電路或類比電路(digital or analog circuits)等積體電路的電子元件(electronic components)，例如是有關於光電元件(opto electronic devices)、微機電系統(Micro Electro Mechanical System;MEMS)、微流體系統(micro fluidic systems)、或利用熱、光線及壓力等物理量變化來測量的物理感測器(Physical Sensor)。特別是可選擇使用晶圓級封裝(wafer scale package;WSP)製程對影像感測元件、發光二極體(light-emitting diodes;LEDs)、太陽能電池(solar cells)、射頻元件(RF circuits)、加速計(accelerators)、陀螺儀(gyroscopes)、微制動器(micro actuators)、表面聲波元件(surface acoustic wave devices)、壓力感測器(process sensors)噴墨頭(ink printer heads)、或功率晶片模組(power IC modules)等半導體晶片進行封裝。
其中上述晶圓級封裝製程主要係指在晶圓階段完成封裝步驟後，再予以切割成獨立的封裝體，然而，在一特定實施例中，例如將已分離之半導體晶片重新分布在一承載晶圓上，再進行封裝製程，亦可稱之為晶圓級封裝製程。另外，上述晶圓級封裝製程亦適用於藉堆疊(stack)方式安排具有積體電路之多片晶圓，以形成多層積體電路(multi-layer integrated circuit devices)之晶片封裝體。
第1A-1H圖顯示根據本發明一實施例之晶片封裝體的製程剖面圖。如第1A圖所示，提供半導體基底100，其具有表面100a及表面100b，且其中形成有複數個金氧半場效電晶體。半導體基底100例如可為矽基底，如矽晶圓。在其他實施例中，半導體基底100亦可為其他適合的半導體材料，例如可為鍺、矽鍺、碳化矽、砷化鎵、或其相似物等。
在半導體基底100中可預先形成有複數個源極區及汲極區。在一實施例中，半導體基底100之導電型式可為N型或P型，一般而言，以N型之半導體基底居多。以導電型式為N型之半導體基底100為例，其可為摻雜有N型摻質之矽基底。半導體基底100中之摻質種類與摻雜濃度可為不均一的。例如，半導體基底100下部分(靠近表面100b之部分)所摻雜之N型摻質的種類與摻雜濃度可不同於上部分(靠近表面100a之部分)中之N型摻質種類與摻雜濃度。半導體基底100本身可形成一汲極區。因此，標號100亦可代表汲極區(指半導體基底100中未形成源極區或其他摻雜區之部分)。
在一實施例中，半導體基底100可包括數個摻雜區(未顯示)，其可自表面100a或接近表面100a處朝表面100b延伸。摻雜區之導電型式不同於半導體基底100。例如，當半導體基底100為N型基底時，摻雜區之導電型式為P型，反之亦然。
在一實施例中，半導體基底100包括源極區S，其可位於摻雜區中。源極區S之導電型式與半導體基底100相同，例如皆為N型。在一實施例中，源極區S自表面100a或接近表面100a處朝表面100b延伸，且可部分被摻雜區圍繞。在第1A圖中，為簡化與清楚化圖式，僅顯示出源極區S。
在一實施例中，半導體基底100之表面100a上設置有介電層102。介電層102之上或之中可形成有至少一源極電極104S1及至少一源極電極104S2，其可透過形成於介電層102及/或半導體基底100中之導電線路而分別電性連接至對應的源極區S。例如，在一實施例中，源極電極104S1及源極電極104S2係透過其下形成於介電層102中之介層窗結構(via structure)而分別與對應的源極區S電性連接。
在一實施例中，介電層102之上或之中還可形成有至少一閘極104G1及至少一閘極104G2，其例如可為(但不限於)一多晶矽層。閘極104G1及/或104G2與半導體基底100之間所間隔之介電層102可用作閘極介電層。此外，在另一實施例中，閘極與閘極介電層可為埋入式結構，其可形成於基底之凹穴中。在此情形下，閘極104G1及/或104G2至少部分埋於半導體基底100之中。半導體基底100中形成之源極區、汲極區、及閘極共同形成複數個金氧半場效電晶體。
在第1圖之實施例中，將於半導體基底100之表面100b上形成與其他電子構件(例如，印刷電路板)電性接觸之導電接點(例如，銲球或導電凸塊)，因此需於半導體基底中形成自表面100a朝表面100b延伸之導電通路，使得隨後設置於表面100b上之導電接點可電性連接至設置於表面100a上之構件(例如，閘極104G1、104G2或源極電極104S1、104S2)。
在一實施例中，係透過穿基底導電結構以完成上述連接表面100a與100b上之元件的導電通路。在穿基底導電結構之形成過程中，需先於半導體基底100中形成孔洞。如第1B圖所示，可例如以蝕刻方式或物理鑽孔等方式自表面100a移除部分的半導體基底100以形成朝表面100b延伸之複數個孔洞。在一實施例中，將於孔洞105G1、105S1、105D2、及105S2中分別形成電性連接閘極104G1、源極電極104S1、汲極區、及源極電極104S2之穿基底導電結構。此外，形成於左側之源極區S與孔洞105D2之間的孔洞105I將於後續製程中填入絕緣材料以形成隔絕兩相鄰金氧半場效電晶體之絕緣結構。相似地，孔洞105I’可於後續製程中填入絕緣材料以形成隔絕兩相鄰金氧半場效電晶體之絕緣結構。
如第1B圖所示，在形成孔洞之後，可順應性於半導體基底100之表面100a上及孔洞之側壁與底部上形成絕緣層106。絕緣層106可包括高分子材料，例如環氧樹脂、聚亞醯胺、或前述之組合。絕緣層106之材質亦可包括(但不限於)氧化物、氮化物、氮氧化物、金屬氧化物、或前述之組合。絕緣層106之形成方式例如包括噴塗法、噴墨法、浸鍍法、化學氣相沉積、或前述之組合。
接著，如第1C圖所示，移除部分的絕緣層106以使閘極104G1、104G2及源極電極104S1、104S2皆至少部分露出。接著，可於孔洞105I、105I’中填入絕緣材料以分別形成絕緣結構108、108’。在另一實施例中，可先形成絕緣結構108，接著將絕緣層106圖案化以露出閘極104G1、104G2及源極電極104S1、104S2。絕緣結構108分離兩相鄰之金氧半場效電晶體使其運作不互相干擾。此外，在一實施例中，需將孔洞105D2中之絕緣層106至少部分移除以使絕緣結構108右側之金氧半場效電晶體中之汲極區(即，右側之半導體基底)至少部分露出。在一實施例中，孔洞105D2中之絕緣層106係被完全移除。
接著，如第1D圖所示，於半導體基底100之表面100a上形成圖案化導電層，其填入先前所定義之孔洞中以作為穿基底導電結構。在第1D圖之實施例中，雖然圖案化導電層大抵將相應的孔洞填滿，但本發明實施例不限於此。在其他實施例中，圖案化導電層可例如僅順應性形成於相應孔洞之底部與側壁之上。圖案化導電層之材質例如包括(但不限於)銅、鋁、金、鉑、銀、或前述之組合。圖案化導電層之形成方式例如包括物理氣相沉積、化學氣相沉積、塗佈、電鍍、無電鍍、或前述之組合。
如第1D圖所示，導電層110G1形成於孔洞105G1中，並電性連接閘極104G1。例如，導電層110G1可延伸至閘極104G1之上方而與之電性接觸。導電層110G2形成於孔洞105G2中，並電性連接閘極104G2。例如，導電層110G2可延伸至閘極104G2之上方而與之電性接觸。導電層110S2形成於孔洞105S2中，並電性連接源極電極104S2。例如，導電層110S2可延伸至源極電極104S2之上方而與之電性接觸。延伸於半導體基底100上之導電層亦可稱為線路重佈層。
導電層110S1形成於孔洞105S1中，並電性連接源極電極104S1。導電層110D2形成於孔洞105D2中，並電性連接絕緣結構108右側之金氧半場效電晶體中之汲極區。導電層110S1可延伸至源極電極104S1之上方面與之電性接觸。相似地，導電層110D2可延伸至源極電極104S1之上方而與之電性接觸。因此，導電層110S1與導電層110D2可透過源極電極104S1而彼此電性連接。換言之，絕緣結構108左側之金氧半場效電晶體中之源極區S電性連接絕緣結構108右側之金氧半場效電晶體中之汲極區。
接著，如第1E圖所示，可選擇性透過黏著層112於半導體基底100之表面100a上設置承載基底114以利於後續製程之進行。
接著，如第1F圖所示，可以承載基底114為支撐，例如透過機械研磨及/或化學機械研磨製程而自半導體基底100之表面100b薄化半導體基底100。在一實施例中，半導體基底100可薄化至使先前所形成之穿基底導電結構露出。在薄化製程之後，可於半導體基底100之表面100b上形成絕緣層116。絕緣層116之材質與形成方式可類似於絕緣層106。
接著，如第1G圖所示，透過圖案化製程將絕緣層116圖案化以形成露出穿基底導電結構及絕緣結構108左側之金氧半場效電晶體中之汲極區之開口。
接著，如第1H圖所示，於絕緣層116上形成圖案化導電層118G1、118S1、118D1、118D2、118G2、及118S2。圖案化導電層可透過絕緣層116之開口而分別電性連接相應的穿基底導電結構或汲極區。圖案化導電層可用作銲球或金屬凸塊之接墊。在一實施例中，可不形成導電層118D2。圖案化導電層之材質例如包括(但不限於)銅、鋁、金、鉑、銀、釩、鈦、或前述之組合。圖案化導電層之形成方式例如包括物理氣相沉積、化學氣相沉積、塗佈、電鍍、無電鍍、或前述之組合。
如第1H圖所示，可於半導體基底100之表面100b上形成保護層122。保護層122可定義有複數個開口，分別露出導電層118G1、118S1、118D1、118G2、及118S2。接著，可分別於露出的導電層118G1、118S1、118D1、118G2、及118S2上形成導電凸塊120G1、120S1、120D1、120G2、及120S2。導電凸塊120G1、120S1、120D1、120G2、及120S2之端點係大抵共平面，因而利於與其他電子構件(例如，印刷電路板)整合。導電凸塊120G1、120S1、120D1、120G2、及120S2之端點所在之平面可大抵平行於半導體基底之表面100a或100b。可沿著半導體基底100上之預定切割道(未顯示)切割半導體基底100以形成複數個單獨的晶片封裝體。此外，在一實施例中，還可選擇性移除黏著層112及承載基底114。
在第1H圖之實施例中，絕緣結構108將半導體基底100隔離成左右兩彼此橫向設置之半導體基底。再者，導電層110G1、118G1、及導電凸塊120G1係用作電性連接閘極104G1之閘極導電結構。源極電極104S1、導電層110S1、118S1、及導電凸塊120S1係用作電性連接左側源極區S之源極導電結構。導電層118D1、及導電凸塊120D1係用作電性連接左側汲極區之汲極導電結構。導電層110G2、118G2、及導電凸塊120G2係用作電性連接閘極104G2之閘極導電結構。源極電極104S2、導電層110S2、118S2、及導電凸塊120S2係用作電性連接右側源極區S之源極導電結構。此外，右側汲極區可透過穿基底導電結構(即，導電層110D2)及半導體基底上之線路重佈層而與左側源極區電性連接。因此，兩相鄰之金氧半場效電晶體可協同運作。
本發明實施例可有許多變化。例如，第2A-2E圖顯示根據本發明一實施例之晶片封裝體的製程剖面圖，其中相同或相似之標號用以標示相同或相似之元件。此外，相同或相似之元件的材質與形成方式可大抵與第1圖實施例所述者相同或相似。
如第2A圖所示，提供類似於第1A圖所示之半導體基底100。半導體基底100之表面100a上可形成有介電層102、閘極104G1、104G2、及源極電極104S1、104S2，其中源極電極係電性連接預先形成於半導體基底100中之源極區S。接著，可於半導體基底100之表面100a上透過黏著層112而設置承載基底114。
接著，如第2B圖所示，以承載基底114為支撐，自半導體基底100之表面100b將半導體基底100薄化至適合的厚度。接著，於半導體基底100之表面100b上形成圖案化導電層118D1及118D2。圖案化導電層118D1及118D2係電性連接半導體基底中之汲極區。
如第2C圖所示，透過黏著層212而於半導體基底100之表面100b上設置承載基底214，並移除先前設置於半導體基底100之表面100a上之黏著層112及承載基底114。接著，例如以蝕刻製程或物理鑽孔之方式自半導體基底100之表面100a移除部分的半導體基底100以形成朝表面100b延伸之孔洞105D1、105D2、105I、及105I’。孔洞105I及105I’中可填充絕緣材料以形成絕緣結構108I及108I’。絕緣結構用以隔離半導體基底中之相鄰的金氧半場效電晶體，並將半導體基底分為左右兩半導體基底。
接著，如第2D圖所示，於半導體基底100之表面100a上形成圖案化導電層110D1及110D2。導電層110D1及110D2可分別延伸進入孔洞105D1及105D2中。在一實施例中，導電層110D1及110D2係分別與孔洞105D1及105D2之側壁直接接觸。在一實施例中，導電層110D1及110D2係分別與導電層118D1及118D2電性接觸。此外，在一實施例中，可於形成圖案化導電層110D1及110D2時，同時於閘極及/或源極電極上形成導電層(或稱線路重佈層)，其可作為後續所形成之導電凸塊的接墊。如第2D圖所示，在一實施例中，絕緣結構108右側之汲極區透過穿基底導電結構(即，導電層110D2)、半導體基底100表面100a上之線路重佈層、及源極電極104S1而與絕緣結構108左側之源極區S電性連接。
如第2E圖所示，可於半導體基底100之表面100a上形成保護層122。保護層122可定義有複數個開口，分別露出導電層110D1、110D2、閘極104G1、104G2(或閘極上方之導電層)、及源極電極104S1、104S2(或源極電極上方之導電層)。接著，可於保護層122之開口中分別形成導電凸塊120D1、120G1、120S1、120G2、及120S2。導電凸塊120D1、120G1、120S1、120G2、及120S2之端點係大抵共平面，因而利於與其他電子構件(例如，印刷電路板)整合。可沿著半導體基底100上之預定切割道(未顯示)切割半導體基底100以形成複數個單獨的晶片封裝體。此外，在一實施例中，還可選擇性移除黏著層212及承載基底214。
在上述實施例中，晶片封裝體包括兩橫向設置之半導體基底。每一半導體基底中皆包括一金氧半場效電晶體，分別皆具有閘極、源極區、及汲極區。其中一金氧半場效電晶體之源極區可透過穿基底導電結構與線路重佈層而與另一金氧半場效電晶體之汲極區電性連接，使得晶片封裝體中之相鄰金氧半場效電晶體可協同運作。透過穿基底導電結構而可將半導體基底中之各導電區之電性接點接導引至同一平面，利於與其他電子構件整合。在本發明實施例之晶片封裝體中，透過穿基底絕緣結構，可隔離兩相鄰之半導體基底，避免兩橫向設置之金氧半場效電晶體於運作時彼此干擾。此外，雖然上述實施例之兩橫向設置之半導體基底係圖案化自同一半導體基底，但本發明實施例不限於此。在其他實施例中，可將兩預先準備之半導體基底設置於承載基底上，並接著完成後續的封裝製程。
雖然本發明已以數個較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100．．．基底
100a、100b．．．表面
102．．．介電層
104S1、104S2．．．源極電極
104G1、104G2．．．閘極
105D1、105D2、105G1、105G2、105I、105I’、105S1、105S2．．．孔洞
106．．．絕緣層
108、108’．．．絕緣結構
110D1、110D2、110G1、110G2、110S1、110S2．．．導電層
112．．．黏著層
114．．．承載基底
116．．．絕緣層
118D1、118D2、118G1、118G2、118S1、118S2．．．導電層
120D1、120G1、120G2、120S1、120S2．．．導電凸塊
122．．．保護層
212．．．黏著層
214．．．承載基底
S．．．源極區
第1A-1H圖顯示根據本發明一實施例之晶片封裝體的製程剖面圖。
第2A-2E圖顯示根據本發明一實施例之晶片封裝體的製程剖面圖。
100．．．基底
100a、100b．．．表面
102．．．介電層
104S1、104S2．．．源極電極
104G1、104G2．．．閘極
105D1、105D2、105I、105I’、105S1、105S2．．．孔洞
108、108’．．．絕緣結構
110D1、110D2．．．導電層
118D1、118D2．．．導電層
120D1、120G1、120G2、120S1、120S2．．．導電凸塊
122．．．保護層
212．．．黏著層
214．．．承載基底
S．．．源極區

Claims (20)

  1. 一種晶片封裝體，包括：一半導體基底；一汲極區及一源極區，位於該半導體基底中；一閘極，位於該半導體基底之上或至少部分埋於該半導體基底中；一汲極導電結構、一源極導電結構、及一閘極導電結構，設置於該半導體基底之上，且分別電性連接該汲極區、該源極區、及該閘極；一第二半導體基底，橫向設置於該半導體基底之一側；一第二汲極區及一第二源極區，位於該第二半導體基底中，其中該第二汲極區電性連接該半導體基底中之該源極區；一第二閘極，位於該第二半導體基底之上或至少部分埋於該第二半導體基底之中；以及一第二源極導電結構及一第二閘極導電結構，設置於該第二半導體基底之上，且分別電性連接該第二源極區及該第二閘極，其中該汲極導電結構、該源極導電結構、該閘極導電結構、該第二源極導電結構、及該第二閘極導電結構之端點係大抵共平面。
  2. 如申請專利範圍第1項所述之晶片封裝體，更包括一絕緣結構，位於該半導體基底與該第二半導體基底之間。
  3. 如申請專利範圍第1項所述之晶片封裝體，更包括：一第一穿基底導電結構，貫穿該半導體基底，且電性連接該閘極與該閘極導電結構；一第二穿基底導電結構，貫穿該半導體基底，且電性連接該源極區與該源極導電結構；一第三穿基底導電結構，貫穿該第二半導體基底，且電性連接該第二閘極與該第二閘極導電結構；以及一第四穿基底導電結構，貫穿該第二半導體基底，且電性連接該第二源極區與該第二源極導電結構。
  4. 如申請專利範圍第3項所述之晶片封裝體，更包括複數層絕緣層，分別位於該第一穿基底導電結構與該半導體基底之間、位於該第二穿基底導電結構與該半導體基底之間、位於該第三穿基底導電結構與該第二半導體基底之間、以及位於該第四穿基底導電結構與該第二半導體基底之間。
  5. 如申請專利範圍第1項所述之晶片封裝體，更包括：一第五穿基底導電結構，貫穿該第二半導體基底，且電性連接該第二汲極區；以及一線路重佈層，位於該第二半導體基底上，且電性連接該第五穿基底導電結構與該源極區。
  6. 如申請專利範圍第1項所述之晶片封裝體，更包括：一第一穿基底導電結構，貫穿該半導體基底，且電性連接該汲極區與該汲極導電結構；以及一第二穿基底導電結構，貫穿該第二半導體基底，且電性連接該第二汲極區與該源極區。
  7. 如申請專利範圍第6項所述之晶片封裝體，更包括一線路重佈層，位於該第二半導體基底上，且電性連接該第二穿基底導電結構與該源極區。
  8. 如申請專利範圍第1項所述之晶片封裝體，其中該半導體基底之厚度大抵等於該第二半導體基底之厚度。
  9. 如申請專利範圍第1項所述之晶片封裝體，其中該汲極導電結構、該源極導電結構、該閘極導電結構、該第二源極導電結構、及該第二閘極導電結構皆包括一銲球。
  10. 如申請專利範圍第1項所述之晶片封裝體，更包括一承載基底，設置於該半導體基底與該第二半導體基底之上，其中該承載基底與該些端點分別位於該半導體基底之相反表面上。
  11. 一種晶片封裝體的形成方法，包括：提供一半導體基底，具有兩相鄰之一金氧半場效電晶體及一第二金氧半場效電晶體，其中該金氧半場效電晶體具有一汲極區、一源極區、及一閘極，而該第二金氧半場效電晶體具有一第二汲極區、一第二源極區、及一第二閘極；於該半導體基底之一表面上設置一汲極導電結構、一源極導電結構、一閘極導電結構、一第二源極導電結構、及一第二閘極導電結構，分別電性連接至該汲極區、該源極區、該閘極、該第二源極區、及該第二閘極，其中該汲極導電結構、該源極導電結構、該閘極導電結構、該第二源極導電結構、及該第二閘極導電結構之端點大抵共平面；以及將該源極區電性連接至該第二汲極區。
  12. 如申請專利範圍第11項所述之晶片封裝體的形成方法，更包括於該金氧半場效電晶體及該第二金氧半場效電晶體之間形成一絕緣結構。
  13. 如申請專利範圍第11項所述之晶片封裝體的形成方法，更包括：於該半導體基底中形成一第一穿基底導電結構，貫穿該半導體基底，且電性連接該閘極與該閘極導電結構；於該半導體基底中形成一第二穿基底導電結構，貫穿該半導體基底，且電性連接該源極區與該源極導電結構；於該半導體基底中形成一第三穿基底導電結構，貫穿該半導體基底，且電性連接該第二閘極與該第二閘極導電結構；以及於該半導體基底中形成一第四穿基底導電結構，貫穿該半導體基底，且電性連接該第二源極區與該第二源極導電結構。
  14. 如申請專利範圍第13項所述之晶片封裝體的形成方法，更包括：移除部分的該半導體基底以於該半導體基底中形成複數個孔洞；以及於該半導體基底上形成一圖案化導電層，該圖案化導電層延伸進入該些孔洞之中以分別形成該第一、該第二、該第三、及該第四穿基底導電結構。
  15. 如申請專利範圍第14項所述之晶片封裝體的形成方法，更包括在形成該圖案化導電層之前，於該些孔洞之側壁上形成一絕緣層。
  16. 如申請專利範圍第13項所述之晶片封裝體的形成方法，更包括於該半導體基底中形成一第五穿基底導電結構，貫穿該半導體基底，且電性連接該第二汲極區與該源極區。
  17. 如申請專利範圍第11項所述之晶片封裝體的形成方法，更包括：於該半導體基底中形成一第一穿基底導電結構，貫穿該半導體基底，且電性連接該汲極區與該汲極導電結構；以及於該半導體基底中形成一第二穿基底導電結構，貫穿該半導體基底，且電性連接該第二汲極區與該源極區。
  18. 如申請專利範圍第17項所述之晶片封裝體的形成方法，其中該第一穿基底導電結構及第二穿基底導電結構皆直接接觸該半導體基底。
  19. 如申請專利範圍第11項所述之晶片封裝體的形成方法，更包括於該半導體基底上設置一承載基底，其中該承載基底與該些端點分別位於該半導體基底之相反表面上。
  20. 一種晶片封裝體的形成方法，包括：提供一半導體基底，具有一汲極區、一源極區、及一閘極；提供一第二半導體基底，具有一第二汲極區、一第二源極區、及一第二閘極；將該第二半導體基底橫向設置於該半導體基底之一側；於該半導體基底之一表面上設置一汲極導電結構、一源極導電結構、及一閘極導電結構，分別電性連接至該汲極區、該源極區、及該閘極；於該第二半導體基底之一表面上設置一第二源極導電結構及一第二閘極導電結構，分別電性連接至該第二源極區及該第二閘極，其中該汲極導電結構、該源極導電結構、該閘極導電結構、該第二源極導電結構、及該第二閘極導電結構之端點大抵共平面；以及將該源極區電性連接至該第二汲極區。
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