TWI468560B - 用於製造矽塊的方法 - Google Patents
用於製造矽塊的方法 Download PDFInfo
- Publication number
- TWI468560B TWI468560B TW101142827A TW101142827A TWI468560B TW I468560 B TWI468560 B TW I468560B TW 101142827 A TW101142827 A TW 101142827A TW 101142827 A TW101142827 A TW 101142827A TW I468560 B TWI468560 B TW I468560B
- Authority
- TW
- Taiwan
- Prior art keywords
- crystal
- gap
- orientation
- seed
- case
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000013078 crystal Substances 0.000 claims description 189
- 238000000034 method Methods 0.000 claims description 23
- 230000012010 growth Effects 0.000 claims description 21
- 239000007787 solid Substances 0.000 claims description 9
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 230000007547 defect Effects 0.000 description 21
- 230000000694 effects Effects 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000035040 seed growth Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011086669.8A DE102011086669B4 (de) | 2011-11-18 | 2011-11-18 | Verfahren zur Herstellung von Silizium-Blöcken sowie Silizium-Block |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201326473A TW201326473A (zh) | 2013-07-01 |
| TWI468560B true TWI468560B (zh) | 2015-01-11 |
Family
ID=48221850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101142827A TWI468560B (zh) | 2011-11-18 | 2012-11-16 | 用於製造矽塊的方法 |
Country Status (5)
| Country | Link |
|---|---|
| KR (1) | KR101428213B1 (de) |
| CN (1) | CN103122478B (de) |
| DE (1) | DE102011086669B4 (de) |
| MY (1) | MY163711A (de) |
| TW (1) | TWI468560B (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3005966B1 (fr) * | 2013-05-27 | 2016-12-30 | Commissariat Energie Atomique | Procede de fabrication d'un lingot de silicium par reprise sur germes en four de solidification dirigee |
| FR3005967B1 (fr) * | 2013-05-27 | 2017-06-02 | Commissariat Energie Atomique | Procede de fabrication d'un lingot de silicium dote de joints de grains symetriques |
| FR3029941B1 (fr) * | 2014-12-12 | 2019-10-11 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Pavage de germes |
| CN104911691B (zh) * | 2015-04-15 | 2017-11-28 | 江西赛维Ldk太阳能高科技有限公司 | 一种籽晶的铺设方法、准单晶硅片的制备方法及准单晶硅片 |
| CN106245113B (zh) * | 2016-09-18 | 2018-10-19 | 江西赛维Ldk太阳能高科技有限公司 | 一种多晶硅锭及其制备方法和多晶硅片 |
| CN106757331B (zh) * | 2016-12-16 | 2019-03-08 | 赛维Ldk太阳能高科技(新余)有限公司 | 一种多晶硅锭及其制备方法 |
| CN109385662A (zh) * | 2018-12-12 | 2019-02-26 | 赛维Ldk太阳能高科技(新余)有限公司 | 一种籽晶的铺设方法、类单晶硅锭的制备方法和类单晶硅片 |
| CN109989104A (zh) * | 2019-01-25 | 2019-07-09 | 赛维Ldk太阳能高科技(新余)有限公司 | 一种铸造单晶硅锭的制备方法、单晶硅锭 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101935869A (zh) * | 2010-09-17 | 2011-01-05 | 浙江大学 | 一种用于生长铸造单晶硅的坩埚及衬底片 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005013410B4 (de) | 2005-03-23 | 2008-01-31 | Deutsche Solar Ag | Vorrichtung und Verfahren zum Kristallisieren von Nichteisenmetallen |
| WO2007004631A1 (ja) * | 2005-07-04 | 2007-01-11 | Tohoku University | 粒界性格制御多結晶の作製方法 |
| CA2636033A1 (en) * | 2006-01-20 | 2007-07-26 | Bp Corporation North America Inc. | Methods and apparatuses for manufacturing geometric multi-crystalline cast silicon and geometric multi-crystalline cast silicon bodies for photovoltaics |
| CN101370969A (zh) * | 2006-01-20 | 2009-02-18 | Bp北美公司 | 制造几何多晶铸硅的方法和装置及用于光电池的几何多晶铸硅实体 |
| KR20100049078A (ko) * | 2007-07-20 | 2010-05-11 | 비피 코포레이션 노쓰 아메리카 인코포레이티드 | 시드 결정으로부터 캐스트 실리콘을 제조하는 방법 및 장치 |
| EP2505695A3 (de) | 2007-07-20 | 2013-01-09 | AMG Idealcast Solar Corporation | Verfahren zur Herstellung von Gusssilicium aus Keimkristallen |
| DE102007035756B4 (de) | 2007-07-27 | 2010-08-05 | Deutsche Solar Ag | Verfahren zur Herstellung von Nichteisenmetall-Blöcken |
| DE102007038851A1 (de) * | 2007-08-16 | 2009-02-19 | Schott Ag | Verfahren zur Herstellung von monokristallinen Metall- oder Halbmetallkörpern |
| CN101654805B (zh) * | 2009-09-24 | 2011-09-14 | 浙江大学 | 一种单晶向、柱状大晶粒的铸造多晶硅的制备方法 |
| DE102010029741B4 (de) * | 2010-06-07 | 2013-02-28 | Solarworld Innovations Gmbh | Verfahren zum Herstellen von Silizium-Wafern, Silizium Wafer und Verwendung eines Silizium-Wafer als Silizium-Solarzelle |
| CN102242394A (zh) * | 2011-06-15 | 2011-11-16 | 安阳市凤凰光伏科技有限公司 | 铸造法生产类似单晶硅锭投炉硅料和晶种摆放方法 |
-
2011
- 2011-11-18 DE DE102011086669.8A patent/DE102011086669B4/de active Active
-
2012
- 2012-11-14 MY MYPI2012004935A patent/MY163711A/en unknown
- 2012-11-16 TW TW101142827A patent/TWI468560B/zh not_active IP Right Cessation
- 2012-11-16 KR KR1020120130129A patent/KR101428213B1/ko active IP Right Grant
- 2012-11-16 CN CN201210464754.3A patent/CN103122478B/zh not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101935869A (zh) * | 2010-09-17 | 2011-01-05 | 浙江大学 | 一种用于生长铸造单晶硅的坩埚及衬底片 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103122478A (zh) | 2013-05-29 |
| DE102011086669A1 (de) | 2013-05-23 |
| KR20130055534A (ko) | 2013-05-28 |
| CN103122478B (zh) | 2016-02-17 |
| TW201326473A (zh) | 2013-07-01 |
| DE102011086669B4 (de) | 2016-08-04 |
| MY163711A (en) | 2017-10-13 |
| KR101428213B1 (ko) | 2014-08-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |