TWI463795B - 具有改良式諧波抑制之平衡至不平衡轉換變壓器 - Google Patents
具有改良式諧波抑制之平衡至不平衡轉換變壓器 Download PDFInfo
- Publication number
- TWI463795B TWI463795B TW098102270A TW98102270A TWI463795B TW I463795 B TWI463795 B TW I463795B TW 098102270 A TW098102270 A TW 098102270A TW 98102270 A TW98102270 A TW 98102270A TW I463795 B TWI463795 B TW I463795B
- Authority
- TW
- Taiwan
- Prior art keywords
- winding
- balanced
- substrate
- electrically coupled
- unbalanced
- Prior art date
Links
- 230000001629 suppression Effects 0.000 title claims description 13
- 238000004804 winding Methods 0.000 claims description 88
- 238000006243 chemical reaction Methods 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 46
- 239000003990 capacitor Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 238000003780 insertion Methods 0.000 description 9
- 230000037431 insertion Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F19/00—Fixed transformers or mutual inductances of the signal type
- H01F19/04—Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/42—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0021—Constructional details
- H03H2001/0064—Constructional details comprising semiconductor material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/17—Structural details of sub-circuits of frequency selective networks
- H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
- H03H7/1775—Parallel LC in shunt or branch path
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Transmitters (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
- Coils Or Transformers For Communication (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/025,315 US7683733B2 (en) | 2008-02-04 | 2008-02-04 | Balun transformer with improved harmonic suppression |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201014170A TW201014170A (en) | 2010-04-01 |
| TWI463795B true TWI463795B (zh) | 2014-12-01 |
Family
ID=40931099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098102270A TWI463795B (zh) | 2008-02-04 | 2009-01-21 | 具有改良式諧波抑制之平衡至不平衡轉換變壓器 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7683733B2 (enExample) |
| JP (1) | JP5656289B2 (enExample) |
| KR (1) | KR101582106B1 (enExample) |
| TW (1) | TWI463795B (enExample) |
| WO (1) | WO2009099692A1 (enExample) |
Families Citing this family (48)
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| JP4627791B2 (ja) * | 2008-07-14 | 2011-02-09 | アルプス電気株式会社 | 平衡−不平衡変換回路 |
| US7961063B2 (en) * | 2008-07-31 | 2011-06-14 | Freescale Semiconductor, Inc. | Balun signal transformer and method of forming |
| JP5146917B2 (ja) * | 2008-10-31 | 2013-02-20 | Ｔｄｋ株式会社 | 薄膜バラン |
| US8358179B2 (en) * | 2009-09-10 | 2013-01-22 | Stats Chippac, Ltd. | Semiconductor device and method of forming directional RF coupler with IPD for additional RF signal processing |
| JP5532983B2 (ja) * | 2010-02-04 | 2014-06-25 | 三菱電機株式会社 | 検出回路とそれを用いた半導体装置 |
| US8115555B2 (en) * | 2010-03-12 | 2012-02-14 | Samsung Electro-Mechanics | Balun function with reference enhancement in single-ended port |
| US8269575B2 (en) * | 2010-03-30 | 2012-09-18 | Stats Chippac, Ltd. | Semiconductor device and method of forming RF balun having reduced capacitive coupling and high CMRR |
| GB2485561B (en) * | 2010-11-18 | 2017-06-14 | Qualcomm Technologies Int Ltd | Transmit/Receive switch |
| US8576037B1 (en) * | 2011-05-04 | 2013-11-05 | Scientific Components Corporation | Dual output autotransformer |
| EP2549645A1 (en) | 2011-07-21 | 2013-01-23 | Telefonaktiebolaget LM Ericsson (publ) | Transformer filter arrangement |
| EP2549646A1 (en) | 2011-07-21 | 2013-01-23 | Telefonaktiebolaget L M Ericsson (publ) | Transformer filter arrangement |
| TWI528627B (zh) * | 2013-04-24 | 2016-04-01 | 矽品精密工業股份有限公司 | 多頻帶之平衡信號轉換器與其線路結構 |
| US20140320252A1 (en) | 2013-04-29 | 2014-10-30 | Skyworks Solutions, Inc. | Low loss impedance transformers implemented as integrated passive devices and related methods thereof |
| US9160289B2 (en) * | 2013-05-10 | 2015-10-13 | Raytheon Company | Broadband power amplifier having high efficiency |
| US9166731B2 (en) * | 2013-05-23 | 2015-10-20 | Qualcomm Incorporated | Transformer with integrated notch filter |
| US9866196B2 (en) * | 2013-11-13 | 2018-01-09 | Skyworks Solutions, Inc. | Quasi-differential RF power amplifier with high level of harmonics rejection |
| US9800207B2 (en) * | 2014-08-13 | 2017-10-24 | Skyworks Solutions, Inc. | Doherty power amplifier combiner with tunable impedance termination circuit |
| EP3202032B1 (en) * | 2014-10-03 | 2021-09-22 | Short Circuit Technologies LLC | Rf signal splitter for a 60 ghz wideband class e/f2 power amplifier |
| CN107408918B (zh) * | 2015-01-27 | 2021-02-12 | 华为技术有限公司 | 射频振荡器 |
| EP3158641B1 (en) * | 2015-01-27 | 2021-06-16 | Huawei Technologies Co., Ltd. | A resonator circuit |
| KR101755600B1 (ko) * | 2016-01-08 | 2017-07-07 | 삼성전자주식회사 | 자기공명 영상장치에 사용되는 rf 수신 코일 유닛 |
| US11764473B2 (en) | 2016-08-29 | 2023-09-19 | Silicon Laboratories Inc. | Apparatus with partitioned radio frequency antenna and matching network and associated methods |
| US11749893B2 (en) | 2016-08-29 | 2023-09-05 | Silicon Laboratories Inc. | Apparatus for antenna impedance-matching and associated methods |
| US11894622B2 (en) | 2016-08-29 | 2024-02-06 | Silicon Laboratories Inc. | Antenna structure with double-slotted loop and associated methods |
| US11769949B2 (en) | 2016-08-29 | 2023-09-26 | Silicon Laboratories Inc. | Apparatus with partitioned radio frequency antenna and matching network and associated methods |
| US11764749B2 (en) | 2016-08-29 | 2023-09-19 | Silicon Laboratories Inc. | Apparatus with partitioned radio frequency antenna and matching network and associated methods |
| KR102547294B1 (ko) | 2016-10-31 | 2023-06-22 | 삼성전자주식회사 | 반도체 장치 및 반도체 장치의 동작 방법 |
| CN108574471B (zh) * | 2017-03-14 | 2021-11-23 | 珠海全志科技股份有限公司 | 用于射频功率放大电路的全集成谐波滤波器 |
| US9966646B1 (en) * | 2017-05-10 | 2018-05-08 | Werlatone, Inc. | Coupler with lumped components |
| US10200091B2 (en) * | 2017-06-13 | 2019-02-05 | Nxp B.V. | RF front end module and near field communication device |
| US10622136B2 (en) * | 2017-10-26 | 2020-04-14 | Arm Ltd | Balanced-to-unbalanced (balun) transformer |
| US11916514B2 (en) | 2017-11-27 | 2024-02-27 | Silicon Laboratories Inc. | Radio-frequency apparatus with multi-band wideband balun and associated methods |
| US11894826B2 (en) | 2017-12-18 | 2024-02-06 | Silicon Laboratories Inc. | Radio-frequency apparatus with multi-band balun and associated methods |
| US11894621B2 (en) * | 2017-12-18 | 2024-02-06 | Silicon Laboratories Inc. | Radio-frequency apparatus with multi-band balun with improved performance and associated methods |
| US11750167B2 (en) | 2017-11-27 | 2023-09-05 | Silicon Laboratories Inc. | Apparatus for radio-frequency matching networks and associated methods |
| US10516445B2 (en) | 2018-04-11 | 2019-12-24 | Nxp B.V. | RF front end module and near field communication device |
| CN111277228B (zh) * | 2018-12-04 | 2023-04-07 | 炬芯科技股份有限公司 | 射频收发器、存储介质及功率放大器的偶谐波抑制方法 |
| US11038553B2 (en) * | 2018-12-10 | 2021-06-15 | Nxp B.V. | EMC inductor-free RF front-end method and topology with power by field function for an inductively coupled communication system |
| EP3671775A1 (en) * | 2018-12-17 | 2020-06-24 | Nxp B.V. | Integrated circuit comprising a balun |
| US10951197B2 (en) | 2019-06-27 | 2021-03-16 | Sequans Communications S.A. | On-chip balun |
| WO2021249062A1 (zh) * | 2020-06-08 | 2021-12-16 | Oppo广东移动通信有限公司 | Nfc装置及电子设备、信号处理方法 |
| JP2022043892A (ja) * | 2020-09-04 | 2022-03-16 | 株式会社村田製作所 | 電力増幅回路 |
| CN114696844B (zh) * | 2020-12-31 | 2023-12-15 | 炬芯科技股份有限公司 | 一种带谐波抑制的无线信号发射装置和谐波抑制方法 |
| CN115549630A (zh) * | 2021-06-29 | 2022-12-30 | 深圳市中兴微电子技术有限公司 | 平衡电路和单端转差分放大器 |
| US11862872B2 (en) | 2021-09-30 | 2024-01-02 | Silicon Laboratories Inc. | Apparatus for antenna optimization and associated methods |
| CN114285429B (zh) * | 2021-12-28 | 2024-08-23 | 中国航天科工集团八五一一研究所 | 一种二次谐波抑制较高的宽带接收组件 |
| CN116232348B (zh) * | 2023-01-31 | 2025-05-27 | 芯翼信息科技(上海)有限公司 | 谐波抑制电路、发射机 |
| TWI873940B (zh) * | 2023-10-25 | 2025-02-21 | 瑞昱半導體股份有限公司 | 平衡不平衡轉換器與不平衡到平衡的訊號轉換方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5179732A (en) * | 1989-01-10 | 1993-01-12 | Matsushita Electric Industrial Co., Ltd. | Mixer having balun mounted to a support block |
| US5697088A (en) * | 1996-08-05 | 1997-12-09 | Motorola, Inc. | Balun transformer |
| US5898454A (en) * | 1996-06-03 | 1999-04-27 | Scientific-Atlanta, Inc. | Phase cancellation in a multi-output distribution amplifier at crossover frequency |
| TW499690B (en) * | 2000-01-10 | 2002-08-21 | Ibm | Compact multilayer BALUN for RF integrated circuits |
| TW200405366A (en) * | 2002-09-27 | 2004-04-01 | Samsung Electro Mech | 3-Line balun transformer |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5421050B2 (enExample) * | 1974-05-25 | 1979-07-27 | ||
| JPS5816325B2 (ja) * | 1975-06-09 | 1983-03-30 | 日本電気株式会社 | ヘイコウ − フヘイコウヘンカンヘンセイキソウチ |
| JPS54137626A (en) * | 1978-04-18 | 1979-10-25 | Nec Corp | Broad-band transformer circuit |
| US5451914A (en) | 1994-07-05 | 1995-09-19 | Motorola, Inc. | Multi-layer radio frequency transformer |
| US6275687B1 (en) * | 1998-11-30 | 2001-08-14 | Conexant Systems, Inc. | Apparatus and method for implementing a low-noise amplifier and mixer |
| CN100525093C (zh) | 2001-12-06 | 2009-08-05 | Nxp股份有限公司 | 平衡-不平衡变压器和收发器 |
| US6801114B2 (en) * | 2002-01-23 | 2004-10-05 | Broadcom Corp. | Integrated radio having on-chip transformer balun |
| US6810241B1 (en) * | 2002-01-30 | 2004-10-26 | Northrop Grumman Corporation | Microwave diode mixer |
| JP2004304615A (ja) * | 2003-03-31 | 2004-10-28 | Tdk Corp | 高周波複合部品 |
| JP2004328254A (ja) * | 2003-04-23 | 2004-11-18 | Sony Corp | バラン回路とそれを備えた高周波回路モジュール |
| US7253712B1 (en) | 2004-08-31 | 2007-08-07 | Theta Microelectronics, Inc. | Integrated high frequency balanced-to-unbalanced transformers |
| US20080258837A1 (en) | 2007-04-19 | 2008-10-23 | Freescale Semiconductor, Inc. | Balun signal transformer |
-
2008
- 2008-02-04 US US12/025,315 patent/US7683733B2/en active Active
-
2009
- 2009-01-07 WO PCT/US2009/030247 patent/WO2009099692A1/en not_active Ceased
- 2009-01-07 JP JP2010545040A patent/JP5656289B2/ja active Active
- 2009-01-07 KR KR1020107019580A patent/KR101582106B1/ko active Active
- 2009-01-21 TW TW098102270A patent/TWI463795B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5179732A (en) * | 1989-01-10 | 1993-01-12 | Matsushita Electric Industrial Co., Ltd. | Mixer having balun mounted to a support block |
| US5898454A (en) * | 1996-06-03 | 1999-04-27 | Scientific-Atlanta, Inc. | Phase cancellation in a multi-output distribution amplifier at crossover frequency |
| US5697088A (en) * | 1996-08-05 | 1997-12-09 | Motorola, Inc. | Balun transformer |
| TW499690B (en) * | 2000-01-10 | 2002-08-21 | Ibm | Compact multilayer BALUN for RF integrated circuits |
| TW200405366A (en) * | 2002-09-27 | 2004-04-01 | Samsung Electro Mech | 3-Line balun transformer |
Also Published As
| Publication number | Publication date |
|---|---|
| US20090195324A1 (en) | 2009-08-06 |
| KR101582106B1 (ko) | 2016-01-04 |
| WO2009099692A1 (en) | 2009-08-13 |
| JP2011511563A (ja) | 2011-04-07 |
| JP5656289B2 (ja) | 2015-01-21 |
| KR20100125281A (ko) | 2010-11-30 |
| US7683733B2 (en) | 2010-03-23 |
| TW201014170A (en) | 2010-04-01 |
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