KR101582106B1 - 개선된 고조파 억제를 갖는 발룬 트랜스포머 - Google Patents

개선된 고조파 억제를 갖는 발룬 트랜스포머 Download PDF

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Publication number
KR101582106B1
KR101582106B1 KR1020107019580A KR20107019580A KR101582106B1 KR 101582106 B1 KR101582106 B1 KR 101582106B1 KR 1020107019580 A KR1020107019580 A KR 1020107019580A KR 20107019580 A KR20107019580 A KR 20107019580A KR 101582106 B1 KR101582106 B1 KR 101582106B1
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South Korea
Prior art keywords
winding
balun transformer
substrate
harmonic
transformer
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Korean (ko)
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KR20100125281A (ko
Inventor
치앙 리
조나단 케이. 아브로콰
올린 엘. 하틴
리안준 리우
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프리스케일 세미컨덕터, 인크.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F19/00—Fixed transformers or mutual inductances of the signal type
    • H01F19/04—Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/42—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0064—Constructional details comprising semiconductor material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1775—Parallel LC in shunt or branch path
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Transmitters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Coils Or Transformers For Communication (AREA)
KR1020107019580A 2008-02-04 2009-01-07 개선된 고조파 억제를 갖는 발룬 트랜스포머 Active KR101582106B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/025,315 US7683733B2 (en) 2008-02-04 2008-02-04 Balun transformer with improved harmonic suppression
US12/025,315 2008-02-04

Publications (2)

Publication Number Publication Date
KR20100125281A KR20100125281A (ko) 2010-11-30
KR101582106B1 true KR101582106B1 (ko) 2016-01-04

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KR1020107019580A Active KR101582106B1 (ko) 2008-02-04 2009-01-07 개선된 고조파 억제를 갖는 발룬 트랜스포머

Country Status (5)

Country Link
US (1) US7683733B2 (enExample)
JP (1) JP5656289B2 (enExample)
KR (1) KR101582106B1 (enExample)
TW (1) TWI463795B (enExample)
WO (1) WO2009099692A1 (enExample)

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US8269575B2 (en) * 2010-03-30 2012-09-18 Stats Chippac, Ltd. Semiconductor device and method of forming RF balun having reduced capacitive coupling and high CMRR
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US11764473B2 (en) 2016-08-29 2023-09-19 Silicon Laboratories Inc. Apparatus with partitioned radio frequency antenna and matching network and associated methods
US11894622B2 (en) 2016-08-29 2024-02-06 Silicon Laboratories Inc. Antenna structure with double-slotted loop and associated methods
US11749893B2 (en) 2016-08-29 2023-09-05 Silicon Laboratories Inc. Apparatus for antenna impedance-matching and associated methods
US11764749B2 (en) 2016-08-29 2023-09-19 Silicon Laboratories Inc. Apparatus with partitioned radio frequency antenna and matching network and associated methods
US11769949B2 (en) 2016-08-29 2023-09-26 Silicon Laboratories Inc. Apparatus with partitioned radio frequency antenna and matching network and associated methods
KR102547294B1 (ko) 2016-10-31 2023-06-22 삼성전자주식회사 반도체 장치 및 반도체 장치의 동작 방법
CN108574471B (zh) * 2017-03-14 2021-11-23 珠海全志科技股份有限公司 用于射频功率放大电路的全集成谐波滤波器
US9966646B1 (en) * 2017-05-10 2018-05-08 Werlatone, Inc. Coupler with lumped components
US10200091B2 (en) * 2017-06-13 2019-02-05 Nxp B.V. RF front end module and near field communication device
US10622136B2 (en) * 2017-10-26 2020-04-14 Arm Ltd Balanced-to-unbalanced (balun) transformer
US11916514B2 (en) 2017-11-27 2024-02-27 Silicon Laboratories Inc. Radio-frequency apparatus with multi-band wideband balun and associated methods
US11894621B2 (en) * 2017-12-18 2024-02-06 Silicon Laboratories Inc. Radio-frequency apparatus with multi-band balun with improved performance and associated methods
US11894826B2 (en) 2017-12-18 2024-02-06 Silicon Laboratories Inc. Radio-frequency apparatus with multi-band balun and associated methods
US11750167B2 (en) 2017-11-27 2023-09-05 Silicon Laboratories Inc. Apparatus for radio-frequency matching networks and associated methods
US10516445B2 (en) 2018-04-11 2019-12-24 Nxp B.V. RF front end module and near field communication device
CN111277228B (zh) * 2018-12-04 2023-04-07 炬芯科技股份有限公司 射频收发器、存储介质及功率放大器的偶谐波抑制方法
US11038553B2 (en) * 2018-12-10 2021-06-15 Nxp B.V. EMC inductor-free RF front-end method and topology with power by field function for an inductively coupled communication system
EP3671775A1 (en) * 2018-12-17 2020-06-24 Nxp B.V. Integrated circuit comprising a balun
US10951197B2 (en) 2019-06-27 2021-03-16 Sequans Communications S.A. On-chip balun
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JP2022043892A (ja) 2020-09-04 2022-03-16 株式会社村田製作所 電力増幅回路
CN114696844B (zh) * 2020-12-31 2023-12-15 炬芯科技股份有限公司 一种带谐波抑制的无线信号发射装置和谐波抑制方法
CN115549630A (zh) * 2021-06-29 2022-12-30 深圳市中兴微电子技术有限公司 平衡电路和单端转差分放大器
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CN114285429B (zh) * 2021-12-28 2024-08-23 中国航天科工集团八五一一研究所 一种二次谐波抑制较高的宽带接收组件
CN116232348B (zh) * 2023-01-31 2025-05-27 芯翼信息科技(上海)有限公司 谐波抑制电路、发射机
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Also Published As

Publication number Publication date
KR20100125281A (ko) 2010-11-30
TW201014170A (en) 2010-04-01
WO2009099692A1 (en) 2009-08-13
US7683733B2 (en) 2010-03-23
JP5656289B2 (ja) 2015-01-21
TWI463795B (zh) 2014-12-01
JP2011511563A (ja) 2011-04-07
US20090195324A1 (en) 2009-08-06

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