JP5656289B2 - 改善された高調波抑制性能を有するバラン変換器およびその形成方法 - Google Patents

改善された高調波抑制性能を有するバラン変換器およびその形成方法 Download PDF

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Publication number
JP5656289B2
JP5656289B2 JP2010545040A JP2010545040A JP5656289B2 JP 5656289 B2 JP5656289 B2 JP 5656289B2 JP 2010545040 A JP2010545040 A JP 2010545040A JP 2010545040 A JP2010545040 A JP 2010545040A JP 5656289 B2 JP5656289 B2 JP 5656289B2
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Japan
Prior art keywords
winding
balun
substrate
converter
circuit component
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JP2010545040A
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Japanese (ja)
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JP2011511563A (ja
JP2011511563A5 (enExample
Inventor
リー、チャン
ケイ． アブロクワー、ジョナサン
ケイ． アブロクワー、ジョナサン
エル． ハーティン、オーリン
エル． ハーティン、オーリン
リュー、リャンジュン
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F19/00—Fixed transformers or mutual inductances of the signal type
    • H01F19/04—Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/42—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0064—Constructional details comprising semiconductor material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1775—Parallel LC in shunt or branch path
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Transmitters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Coils Or Transformers For Communication (AREA)
JP2010545040A 2008-02-04 2009-01-07 改善された高調波抑制性能を有するバラン変換器およびその形成方法 Active JP5656289B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/025,315 2008-02-04
US12/025,315 US7683733B2 (en) 2008-02-04 2008-02-04 Balun transformer with improved harmonic suppression
PCT/US2009/030247 WO2009099692A1 (en) 2008-02-04 2009-01-07 Balun transformer with improved harmonic supression

Publications (3)

Publication Number Publication Date
JP2011511563A JP2011511563A (ja) 2011-04-07
JP2011511563A5 JP2011511563A5 (enExample) 2012-01-19
JP5656289B2 true JP5656289B2 (ja) 2015-01-21

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ID=40931099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010545040A Active JP5656289B2 (ja) 2008-02-04 2009-01-07 改善された高調波抑制性能を有するバラン変換器およびその形成方法

Country Status (5)

Country Link
US (1) US7683733B2 (enExample)
JP (1) JP5656289B2 (enExample)
KR (1) KR101582106B1 (enExample)
TW (1) TWI463795B (enExample)
WO (1) WO2009099692A1 (enExample)

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US8269575B2 (en) * 2010-03-30 2012-09-18 Stats Chippac, Ltd. Semiconductor device and method of forming RF balun having reduced capacitive coupling and high CMRR
GB2485561B (en) * 2010-11-18 2017-06-14 Qualcomm Technologies Int Ltd Transmit/Receive switch
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US20140320252A1 (en) 2013-04-29 2014-10-30 Skyworks Solutions, Inc. Low loss impedance transformers implemented as integrated passive devices and related methods thereof
US9160289B2 (en) * 2013-05-10 2015-10-13 Raytheon Company Broadband power amplifier having high efficiency
US9166731B2 (en) * 2013-05-23 2015-10-20 Qualcomm Incorporated Transformer with integrated notch filter
US9866196B2 (en) * 2013-11-13 2018-01-09 Skyworks Solutions, Inc. Quasi-differential RF power amplifier with high level of harmonics rejection
US9800207B2 (en) * 2014-08-13 2017-10-24 Skyworks Solutions, Inc. Doherty power amplifier combiner with tunable impedance termination circuit
EP3202032B1 (en) * 2014-10-03 2021-09-22 Short Circuit Technologies LLC Rf signal splitter for a 60 ghz wideband class e/f2 power amplifier
CN107408918B (zh) * 2015-01-27 2021-02-12 华为技术有限公司 射频振荡器
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US11764473B2 (en) 2016-08-29 2023-09-19 Silicon Laboratories Inc. Apparatus with partitioned radio frequency antenna and matching network and associated methods
US11749893B2 (en) 2016-08-29 2023-09-05 Silicon Laboratories Inc. Apparatus for antenna impedance-matching and associated methods
US11894622B2 (en) 2016-08-29 2024-02-06 Silicon Laboratories Inc. Antenna structure with double-slotted loop and associated methods
US11769949B2 (en) 2016-08-29 2023-09-26 Silicon Laboratories Inc. Apparatus with partitioned radio frequency antenna and matching network and associated methods
US11764749B2 (en) 2016-08-29 2023-09-19 Silicon Laboratories Inc. Apparatus with partitioned radio frequency antenna and matching network and associated methods
KR102547294B1 (ko) 2016-10-31 2023-06-22 삼성전자주식회사 반도체 장치 및 반도체 장치의 동작 방법
CN108574471B (zh) * 2017-03-14 2021-11-23 珠海全志科技股份有限公司 用于射频功率放大电路的全集成谐波滤波器
US9966646B1 (en) * 2017-05-10 2018-05-08 Werlatone, Inc. Coupler with lumped components
US10200091B2 (en) * 2017-06-13 2019-02-05 Nxp B.V. RF front end module and near field communication device
US10622136B2 (en) * 2017-10-26 2020-04-14 Arm Ltd Balanced-to-unbalanced (balun) transformer
US11916514B2 (en) 2017-11-27 2024-02-27 Silicon Laboratories Inc. Radio-frequency apparatus with multi-band wideband balun and associated methods
US11894826B2 (en) 2017-12-18 2024-02-06 Silicon Laboratories Inc. Radio-frequency apparatus with multi-band balun and associated methods
US11894621B2 (en) * 2017-12-18 2024-02-06 Silicon Laboratories Inc. Radio-frequency apparatus with multi-band balun with improved performance and associated methods
US11750167B2 (en) 2017-11-27 2023-09-05 Silicon Laboratories Inc. Apparatus for radio-frequency matching networks and associated methods
US10516445B2 (en) 2018-04-11 2019-12-24 Nxp B.V. RF front end module and near field communication device
CN111277228B (zh) * 2018-12-04 2023-04-07 炬芯科技股份有限公司 射频收发器、存储介质及功率放大器的偶谐波抑制方法
US11038553B2 (en) * 2018-12-10 2021-06-15 Nxp B.V. EMC inductor-free RF front-end method and topology with power by field function for an inductively coupled communication system
EP3671775A1 (en) * 2018-12-17 2020-06-24 Nxp B.V. Integrated circuit comprising a balun
US10951197B2 (en) 2019-06-27 2021-03-16 Sequans Communications S.A. On-chip balun
WO2021249062A1 (zh) * 2020-06-08 2021-12-16 Oppo广东移动通信有限公司 Nfc装置及电子设备、信号处理方法
JP2022043892A (ja) * 2020-09-04 2022-03-16 株式会社村田製作所 電力増幅回路
CN114696844B (zh) * 2020-12-31 2023-12-15 炬芯科技股份有限公司 一种带谐波抑制的无线信号发射装置和谐波抑制方法
CN115549630A (zh) * 2021-06-29 2022-12-30 深圳市中兴微电子技术有限公司 平衡电路和单端转差分放大器
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CN114285429B (zh) * 2021-12-28 2024-08-23 中国航天科工集团八五一一研究所 一种二次谐波抑制较高的宽带接收组件
CN116232348B (zh) * 2023-01-31 2025-05-27 芯翼信息科技(上海)有限公司 谐波抑制电路、发射机
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Also Published As

Publication number Publication date
US20090195324A1 (en) 2009-08-06
KR101582106B1 (ko) 2016-01-04
WO2009099692A1 (en) 2009-08-13
JP2011511563A (ja) 2011-04-07
KR20100125281A (ko) 2010-11-30
TWI463795B (zh) 2014-12-01
US7683733B2 (en) 2010-03-23
TW201014170A (en) 2010-04-01

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