TWI461256B - A method for manufacturing a carrier for a double-sided polishing apparatus, a double-sided polishing method for a double-sided polishing apparatus, and a wafer - Google Patents

A method for manufacturing a carrier for a double-sided polishing apparatus, a double-sided polishing method for a double-sided polishing apparatus, and a wafer Download PDF

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Publication number
TWI461256B
TWI461256B TW099120481A TW99120481A TWI461256B TW I461256 B TWI461256 B TW I461256B TW 099120481 A TW099120481 A TW 099120481A TW 99120481 A TW99120481 A TW 99120481A TW I461256 B TWI461256 B TW I461256B
Authority
TW
Taiwan
Prior art keywords
double
carrier
wafer
polishing apparatus
side polishing
Prior art date
Application number
TW099120481A
Other languages
English (en)
Chinese (zh)
Other versions
TW201114546A (en
Inventor
Taichi Yasuda
Tatsuo Enomoto
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of TW201114546A publication Critical patent/TW201114546A/zh
Application granted granted Critical
Publication of TWI461256B publication Critical patent/TWI461256B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW099120481A 2009-07-21 2010-06-23 A method for manufacturing a carrier for a double-sided polishing apparatus, a double-sided polishing method for a double-sided polishing apparatus, and a wafer TWI461256B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009170138A JP5233888B2 (ja) 2009-07-21 2009-07-21 両面研磨装置用キャリアの製造方法、両面研磨装置用キャリア及びウェーハの両面研磨方法

Publications (2)

Publication Number Publication Date
TW201114546A TW201114546A (en) 2011-05-01
TWI461256B true TWI461256B (zh) 2014-11-21

Family

ID=43498904

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099120481A TWI461256B (zh) 2009-07-21 2010-06-23 A method for manufacturing a carrier for a double-sided polishing apparatus, a double-sided polishing method for a double-sided polishing apparatus, and a wafer

Country Status (4)

Country Link
US (1) US9050698B2 (enExample)
JP (1) JP5233888B2 (enExample)
TW (1) TWI461256B (enExample)
WO (1) WO2011010423A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5605260B2 (ja) * 2011-02-18 2014-10-15 信越半導体株式会社 インサート材及び両面研磨装置
JP5648623B2 (ja) * 2011-12-01 2015-01-07 信越半導体株式会社 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法
JP5741497B2 (ja) * 2012-02-15 2015-07-01 信越半導体株式会社 ウェーハの両面研磨方法
JP5748717B2 (ja) 2012-09-06 2015-07-15 信越半導体株式会社 両面研磨方法
DE102013200072A1 (de) * 2013-01-04 2014-07-10 Siltronic Ag Läuferscheibe und Verfahren zur gleichzeitig beidseitigen Politur von Halbleiterscheiben
JP5807648B2 (ja) * 2013-01-29 2015-11-10 信越半導体株式会社 両面研磨装置用キャリア及びウェーハの両面研磨方法
JP5847789B2 (ja) * 2013-02-13 2016-01-27 信越半導体株式会社 両面研磨装置用キャリアの製造方法およびウエーハの両面研磨方法
JP6280355B2 (ja) * 2013-11-29 2018-02-14 Hoya株式会社 磁気ディスク用基板の製造方法及び研磨処理用キャリア
EP3100298B1 (en) 2014-01-27 2020-07-15 Veeco Instruments Inc. Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems
JP6056793B2 (ja) * 2014-03-14 2017-01-11 信越半導体株式会社 両面研磨装置用キャリアの製造方法及び両面研磨方法
JP6424809B2 (ja) * 2015-12-11 2018-11-21 信越半導体株式会社 ウェーハの両面研磨方法
JP6673772B2 (ja) * 2016-07-27 2020-03-25 スピードファム株式会社 ワークキャリア及びワークキャリアの製造方法
JP6743785B2 (ja) * 2017-08-30 2020-08-19 株式会社Sumco キャリアの製造方法およびウェーハの研磨方法
JP6870623B2 (ja) * 2018-01-18 2021-05-12 信越半導体株式会社 キャリアの製造方法及びウェーハの両面研磨方法
JP7070010B2 (ja) * 2018-04-16 2022-05-18 株式会社Sumco キャリアの製造方法および半導体ウェーハの研磨方法
JP7276246B2 (ja) * 2020-05-19 2023-05-18 信越半導体株式会社 両面研磨装置用キャリアの製造方法及びウェーハの両面研磨方法
CN115847281A (zh) * 2022-12-07 2023-03-28 西安奕斯伟材料科技有限公司 一种硅片的双面抛光用的载具以及装置
CN116475934B (zh) * 2023-03-31 2025-03-28 西安奕斯伟材料科技股份有限公司 静压垫、研磨设备及硅片

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000210863A (ja) * 1999-01-22 2000-08-02 Toshiba Ceramics Co Ltd キャリア
JP2003305637A (ja) * 2002-04-15 2003-10-28 Shirasaki Seisakusho:Kk 脆性薄板の研磨用ホルダ
JP2003340711A (ja) * 2002-05-22 2003-12-02 Sagami Pci Kk 研磨機用キャリア

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5244555A (en) * 1991-11-27 1993-09-14 Komag, Inc. Floating pocket memory disk carrier, memory disk and method
US6439984B1 (en) * 1998-09-16 2002-08-27 Entegris, Inc. Molded non-abrasive substrate carrier for use in polishing operations
JP2001198804A (ja) * 2000-01-18 2001-07-24 Hitachi Cable Ltd 両面一次ポリッシュ用ウェハキャリア
JP3439726B2 (ja) * 2000-07-10 2003-08-25 住友ベークライト株式会社 被研磨物保持材及びその製造方法
WO2006001340A1 (ja) 2004-06-23 2006-01-05 Komatsu Denshi Kinzoku Kabushiki Kaisha 両面研磨用キャリアおよびその製造方法
DE102005034119B3 (de) * 2005-07-21 2006-12-07 Siltronic Ag Verfahren zum Bearbeiten einer Halbleiterscheibe, die in einer Aussparung einer Läuferscheibe geführt wird
JP5114113B2 (ja) * 2007-07-02 2013-01-09 スピードファム株式会社 ワークキャリア
JP4605233B2 (ja) * 2008-02-27 2011-01-05 信越半導体株式会社 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000210863A (ja) * 1999-01-22 2000-08-02 Toshiba Ceramics Co Ltd キャリア
JP2003305637A (ja) * 2002-04-15 2003-10-28 Shirasaki Seisakusho:Kk 脆性薄板の研磨用ホルダ
JP2003340711A (ja) * 2002-05-22 2003-12-02 Sagami Pci Kk 研磨機用キャリア

Also Published As

Publication number Publication date
WO2011010423A1 (ja) 2011-01-27
US9050698B2 (en) 2015-06-09
TW201114546A (en) 2011-05-01
JP5233888B2 (ja) 2013-07-10
JP2011025322A (ja) 2011-02-10
US20120100788A1 (en) 2012-04-26

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