TWI457970B - Charge particle beam drawing device and charged particle beam drawing method - Google Patents

Charge particle beam drawing device and charged particle beam drawing method Download PDF

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Publication number
TWI457970B
TWI457970B TW101137928A TW101137928A TWI457970B TW I457970 B TWI457970 B TW I457970B TW 101137928 A TW101137928 A TW 101137928A TW 101137928 A TW101137928 A TW 101137928A TW I457970 B TWI457970 B TW I457970B
Authority
TW
Taiwan
Prior art keywords
irradiation amount
irradiation
particle beam
charged particle
calculation
Prior art date
Application number
TW101137928A
Other languages
English (en)
Chinese (zh)
Other versions
TW201338004A (zh
Inventor
Hironobu Matsumoto
Original Assignee
Nuflare Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Publication of TW201338004A publication Critical patent/TW201338004A/zh
Application granted granted Critical
Publication of TWI457970B publication Critical patent/TWI457970B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30455—Correction during exposure
    • H01J2237/30461—Correction during exposure pre-calculated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Electron Beam Exposure (AREA)
TW101137928A 2011-11-30 2012-10-15 Charge particle beam drawing device and charged particle beam drawing method TWI457970B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011261561A JP5841819B2 (ja) 2011-11-30 2011-11-30 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Publications (2)

Publication Number Publication Date
TW201338004A TW201338004A (zh) 2013-09-16
TWI457970B true TWI457970B (zh) 2014-10-21

Family

ID=48465957

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101137928A TWI457970B (zh) 2011-11-30 2012-10-15 Charge particle beam drawing device and charged particle beam drawing method

Country Status (4)

Country Link
US (1) US8759799B2 (enExample)
JP (1) JP5841819B2 (enExample)
KR (1) KR101352997B1 (enExample)
TW (1) TWI457970B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI611250B (zh) * 2015-04-21 2018-01-11 Nuflare Technology Inc 帶電粒子束描繪裝置及帶電粒子束描繪方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5841819B2 (ja) 2011-11-30 2016-01-13 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6057635B2 (ja) 2012-09-14 2017-01-11 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
TWI533096B (zh) 2013-05-24 2016-05-11 Nuflare Technology Inc Multi - charged particle beam mapping device and multi - charged particle beam rendering method
JP6567843B2 (ja) * 2014-07-02 2019-08-28 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5863682A (en) * 1996-02-23 1999-01-26 Kabushiki Kaisha Toshiba Charged particle beam writing method for determining optimal exposure dose prior to pattern drawing
TW200717192A (en) * 2005-10-26 2007-05-01 Nuflare Technology Inc Charged particle beam writing method and apparatus and readable storage medium
US20070192757A1 (en) * 2006-02-14 2007-08-16 Nuflare Technology, Inc. Pattern generation method and charged particle beam writing apparatus
TWI300534B (en) * 2005-04-11 2008-09-01 Shimadzu Corp Data processing method of scan beam apparatus
US20090057575A1 (en) * 2007-09-05 2009-03-05 Nuflare Technology, Inc. Charged particle beam lithography apparatus and charged particle beam lithography method
TW201117255A (en) * 2009-08-04 2011-05-16 Nuflare Technology Inc Charged particle beam drawing apparatus and method
US20110253912A1 (en) * 2010-04-20 2011-10-20 Nuflare Technology, Inc. Charged particle beam writing apparatus and charged particle beam writing method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3655622B2 (ja) * 1996-02-23 2005-06-02 株式会社東芝 荷電ビーム描画方法及び描画装置
JP2004140311A (ja) * 2002-08-20 2004-05-13 Sony Corp 露光方法および露光装置
JP4101247B2 (ja) * 2004-03-31 2008-06-18 Ｈｏｙａ株式会社 電子ビーム描画方法、リソグラフィマスクの製造方法及び電子ビーム描画装置
JP4607623B2 (ja) * 2005-03-03 2011-01-05 日本電子株式会社 電子ビーム描画方法及び装置
JP4476975B2 (ja) * 2005-10-25 2010-06-09 株式会社ニューフレアテクノロジー 荷電粒子ビーム照射量演算方法、荷電粒子ビーム描画方法、プログラム及び荷電粒子ビーム描画装置
JP4476987B2 (ja) * 2005-10-26 2010-06-09 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法、プログラム及び荷電粒子ビーム描画装置
JP4976071B2 (ja) * 2006-02-21 2012-07-18 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP5069052B2 (ja) * 2007-07-30 2012-11-07 日本電子株式会社 ドーズ補正方法及び荷電粒子ビーム描画装置
JP5662756B2 (ja) 2010-10-08 2015-02-04 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5841819B2 (ja) 2011-11-30 2016-01-13 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5863682A (en) * 1996-02-23 1999-01-26 Kabushiki Kaisha Toshiba Charged particle beam writing method for determining optimal exposure dose prior to pattern drawing
TWI300534B (en) * 2005-04-11 2008-09-01 Shimadzu Corp Data processing method of scan beam apparatus
TW200717192A (en) * 2005-10-26 2007-05-01 Nuflare Technology Inc Charged particle beam writing method and apparatus and readable storage medium
US20070114459A1 (en) * 2005-10-26 2007-05-24 Nuflare Technology, Inc. Charged particle beam writing method and apparatus and readable storage medium
TWI344172B (en) * 2005-10-26 2011-06-21 Nuflare Technology Inc Charged particle beam writing method and apparatus and readable storage medium
US20070192757A1 (en) * 2006-02-14 2007-08-16 Nuflare Technology, Inc. Pattern generation method and charged particle beam writing apparatus
US20090057575A1 (en) * 2007-09-05 2009-03-05 Nuflare Technology, Inc. Charged particle beam lithography apparatus and charged particle beam lithography method
TW201117255A (en) * 2009-08-04 2011-05-16 Nuflare Technology Inc Charged particle beam drawing apparatus and method
US20110253912A1 (en) * 2010-04-20 2011-10-20 Nuflare Technology, Inc. Charged particle beam writing apparatus and charged particle beam writing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI611250B (zh) * 2015-04-21 2018-01-11 Nuflare Technology Inc 帶電粒子束描繪裝置及帶電粒子束描繪方法

Also Published As

Publication number Publication date
US8759799B2 (en) 2014-06-24
KR20130061079A (ko) 2013-06-10
US20130134329A1 (en) 2013-05-30
TW201338004A (zh) 2013-09-16
JP5841819B2 (ja) 2016-01-13
KR101352997B1 (ko) 2014-01-21
JP2013115303A (ja) 2013-06-10

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