KR101352997B1 - 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법 - Google Patents

하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법 Download PDF

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Publication number
KR101352997B1
KR101352997B1 KR1020120136335A KR20120136335A KR101352997B1 KR 101352997 B1 KR101352997 B1 KR 101352997B1 KR 1020120136335 A KR1020120136335 A KR 1020120136335A KR 20120136335 A KR20120136335 A KR 20120136335A KR 101352997 B1 KR101352997 B1 KR 101352997B1
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South Korea
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dose
correction coefficient
small region
charged particle
calculating
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Korean (ko)
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KR20130061079A (ko
Inventor
히로노부 마츠모토
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가부시키가이샤 뉴플레어 테크놀로지
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30455—Correction during exposure
    • H01J2237/30461—Correction during exposure pre-calculated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Electron Beam Exposure (AREA)
KR1020120136335A 2011-11-30 2012-11-28 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법 Active KR101352997B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-261561 2011-11-30
JP2011261561A JP5841819B2 (ja) 2011-11-30 2011-11-30 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Publications (2)

Publication Number Publication Date
KR20130061079A KR20130061079A (ko) 2013-06-10
KR101352997B1 true KR101352997B1 (ko) 2014-01-21

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ID=48465957

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KR1020120136335A Active KR101352997B1 (ko) 2011-11-30 2012-11-28 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법

Country Status (4)

Country Link
US (1) US8759799B2 (enExample)
JP (1) JP5841819B2 (enExample)
KR (1) KR101352997B1 (enExample)
TW (1) TWI457970B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5841819B2 (ja) 2011-11-30 2016-01-13 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6057635B2 (ja) 2012-09-14 2017-01-11 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
TWI533096B (zh) 2013-05-24 2016-05-11 Nuflare Technology Inc Multi - charged particle beam mapping device and multi - charged particle beam rendering method
JP6567843B2 (ja) * 2014-07-02 2019-08-28 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6523767B2 (ja) * 2015-04-21 2019-06-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003318077A (ja) * 1996-02-23 2003-11-07 Toshiba Corp 荷電ビーム描画方法及び描画装置
KR100807957B1 (ko) * 2005-10-25 2008-02-28 가부시키가이샤 뉴플레어 테크놀로지 빔 조사량 연산 방법, 묘화 방법, 기록 매체 및 묘화 장치
KR100819293B1 (ko) * 2006-02-21 2008-04-03 가부시키가이샤 뉴플레어 테크놀로지 하전 입자 빔 묘화 방법 및 하전 입자 빔 묘화 장치
KR101006676B1 (ko) * 2007-09-05 2011-01-10 가부시키가이샤 뉴플레어 테크놀로지 하전 입자 빔 묘화 장치 및 하전 입자 빔 묘화 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3469422B2 (ja) * 1996-02-23 2003-11-25 株式会社東芝 荷電ビーム描画方法及び描画装置
JP2004140311A (ja) * 2002-08-20 2004-05-13 Sony Corp 露光方法および露光装置
JP4101247B2 (ja) * 2004-03-31 2008-06-18 Ｈｏｙａ株式会社 電子ビーム描画方法、リソグラフィマスクの製造方法及び電子ビーム描画装置
JP4607623B2 (ja) * 2005-03-03 2011-01-05 日本電子株式会社 電子ビーム描画方法及び装置
WO2006109564A1 (ja) * 2005-04-11 2006-10-19 Shimadzu Corporation 走査ビーム装置のデータ処理方法
JP4476987B2 (ja) * 2005-10-26 2010-06-09 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法、プログラム及び荷電粒子ビーム描画装置
US7619230B2 (en) * 2005-10-26 2009-11-17 Nuflare Technology, Inc. Charged particle beam writing method and apparatus and readable storage medium
JP5063071B2 (ja) * 2006-02-14 2012-10-31 株式会社ニューフレアテクノロジー パタン作成方法及び荷電粒子ビーム描画装置
JP5069052B2 (ja) * 2007-07-30 2012-11-07 日本電子株式会社 ドーズ補正方法及び荷電粒子ビーム描画装置
JP5570774B2 (ja) * 2009-08-04 2014-08-13 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置および方法
JP5616674B2 (ja) * 2010-04-20 2014-10-29 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5662756B2 (ja) 2010-10-08 2015-02-04 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5841819B2 (ja) 2011-11-30 2016-01-13 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003318077A (ja) * 1996-02-23 2003-11-07 Toshiba Corp 荷電ビーム描画方法及び描画装置
KR100807957B1 (ko) * 2005-10-25 2008-02-28 가부시키가이샤 뉴플레어 테크놀로지 빔 조사량 연산 방법, 묘화 방법, 기록 매체 및 묘화 장치
KR100819293B1 (ko) * 2006-02-21 2008-04-03 가부시키가이샤 뉴플레어 테크놀로지 하전 입자 빔 묘화 방법 및 하전 입자 빔 묘화 장치
KR101006676B1 (ko) * 2007-09-05 2011-01-10 가부시키가이샤 뉴플레어 테크놀로지 하전 입자 빔 묘화 장치 및 하전 입자 빔 묘화 방법

Also Published As

Publication number Publication date
KR20130061079A (ko) 2013-06-10
US20130134329A1 (en) 2013-05-30
TWI457970B (zh) 2014-10-21
TW201338004A (zh) 2013-09-16
US8759799B2 (en) 2014-06-24
JP5841819B2 (ja) 2016-01-13
JP2013115303A (ja) 2013-06-10

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