TWI453822B - 用以改善銅與阻隔層間之黏接的自組裝單層膜 - Google Patents

用以改善銅與阻隔層間之黏接的自組裝單層膜 Download PDF

Info

Publication number
TWI453822B
TWI453822B TW101121357A TW101121357A TWI453822B TW I453822 B TWI453822 B TW I453822B TW 101121357 A TW101121357 A TW 101121357A TW 101121357 A TW101121357 A TW 101121357A TW I453822 B TWI453822 B TW I453822B
Authority
TW
Taiwan
Prior art keywords
vacuum
layer
processing module
transport chamber
substrate
Prior art date
Application number
TW101121357A
Other languages
English (en)
Chinese (zh)
Other versions
TW201246376A (en
Inventor
普文 那拉
威廉 尤
約翰 柏依
第瑞區若巴里 阿瑞那吉拉
楊格蘇克 亞歷山得 優
佛禮茲Ｃ 瑞德克
葉斯帝 多迪
Original Assignee
蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/514,038 external-priority patent/US8241701B2/en
Application filed by 蘭姆研究公司 filed Critical 蘭姆研究公司
Publication of TW201246376A publication Critical patent/TW201246376A/zh
Application granted granted Critical
Publication of TWI453822B publication Critical patent/TWI453822B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H10W20/048—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein by using plasmas or gaseous environments, e.g. by nitriding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW101121357A 2006-08-30 2007-08-29 用以改善銅與阻隔層間之黏接的自組裝單層膜 TWI453822B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/514,038 US8241701B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a barrier surface for copper deposition
US11/639,012 US20090304914A1 (en) 2006-08-30 2006-12-13 Self assembled monolayer for improving adhesion between copper and barrier layer

Publications (2)

Publication Number Publication Date
TW201246376A TW201246376A (en) 2012-11-16
TWI453822B true TWI453822B (zh) 2014-09-21

Family

ID=39136454

Family Applications (2)

Application Number Title Priority Date Filing Date
TW101121357A TWI453822B (zh) 2006-08-30 2007-08-29 用以改善銅與阻隔層間之黏接的自組裝單層膜
TW096131991A TWI462178B (zh) 2006-08-30 2007-08-29 用以改善銅與阻隔層間之黏接的自組裝單層膜

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW096131991A TWI462178B (zh) 2006-08-30 2007-08-29 用以改善銅與阻隔層間之黏接的自組裝單層膜

Country Status (7)

Country Link
US (1) US20090304914A1 (https=)
JP (1) JP5420409B2 (https=)
KR (1) KR101423349B1 (https=)
MY (1) MY162187A (https=)
SG (1) SG174105A1 (https=)
TW (2) TWI453822B (https=)
WO (1) WO2008027205A2 (https=)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8916232B2 (en) * 2006-08-30 2014-12-23 Lam Research Corporation Method for barrier interface preparation of copper interconnect
JP4755573B2 (ja) * 2006-11-30 2011-08-24 東京応化工業株式会社 処理装置および処理方法、ならびに表面処理治具
KR100841170B1 (ko) * 2007-04-26 2008-06-24 삼성전자주식회사 저저항 금속 배선 형성방법, 금속 배선 구조 및 이를이용하는 표시장치
JP4971078B2 (ja) * 2007-08-30 2012-07-11 東京応化工業株式会社 表面処理装置
KR101096031B1 (ko) 2009-03-31 2011-12-19 한양대학교 산학협력단 자기조립단분자막 형성방법과 이를 이용한 반도체 소자의 구리배선 및 그의 형성방법
US8415252B2 (en) * 2010-01-07 2013-04-09 International Business Machines Corporation Selective copper encapsulation layer deposition
US9252049B2 (en) 2013-03-06 2016-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming interconnect structure that avoids via recess
US8962473B2 (en) 2013-03-15 2015-02-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming hybrid diffusion barrier layer and semiconductor device thereof
KR102264160B1 (ko) 2014-12-03 2021-06-11 삼성전자주식회사 비아 구조체 및 배선 구조체를 갖는 반도체 소자 제조 방법
KR101816028B1 (ko) * 2015-01-23 2018-01-08 코닝정밀소재 주식회사 금속 접합기판
US9799593B1 (en) * 2016-04-01 2017-10-24 Intel Corporation Semiconductor package substrate having an interfacial layer
US10358715B2 (en) * 2016-06-03 2019-07-23 Applied Materials, Inc. Integrated cluster tool for selective area deposition
KR101819825B1 (ko) * 2016-06-13 2018-01-18 아주대학교산학협력단 플렉시블 전극 제조방법
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US9875958B1 (en) 2016-11-09 2018-01-23 International Business Machines Corporation Trace/via hybrid structure and method of manufacture
US10163695B1 (en) * 2017-06-27 2018-12-25 Lam Research Corporation Self-forming barrier process
US10678135B2 (en) 2017-12-20 2020-06-09 International Business Machines Corporation Surface treatment of titanium containing hardmasks
JP2019192892A (ja) 2018-04-18 2019-10-31 東京エレクトロン株式会社 処理システムおよび処理方法
CN110952081B (zh) * 2018-09-27 2022-04-29 Imec 非营利协会 用于形成互连部的方法和溶液
KR20250116174A (ko) 2018-11-19 2025-07-31 램 리써치 코포레이션 텅스텐을 위한 몰리브덴 템플릿들
WO2020131897A1 (en) * 2018-12-17 2020-06-25 Averatek Corporation Three dimensional circuit formation
SG11202108217UA (en) 2019-01-28 2021-08-30 Lam Res Corp Deposition of metal films
US12334351B2 (en) 2019-09-03 2025-06-17 Lam Research Corporation Molybdenum deposition
WO2021076636A1 (en) 2019-10-15 2021-04-22 Lam Research Corporation Molybdenum fill
US11929327B2 (en) 2020-01-29 2024-03-12 Taiwan Semiconductor Manufacturing Co., Inc. Liner-free conductive structures with anchor points
DE102020119831B4 (de) 2020-01-29 2024-11-14 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren und Struktur
WO2022108762A1 (en) * 2020-11-19 2022-05-27 Lam Research Corporation Low resistivity contacts and interconnects
JP7686761B2 (ja) 2021-02-23 2025-06-02 ラム リサーチ コーポレーション ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積
WO2022221210A1 (en) 2021-04-14 2022-10-20 Lam Research Corporation Deposition of molybdenum
CN115702474A (zh) 2021-05-14 2023-02-14 朗姆研究公司 高选择性掺杂硬掩模膜
CN121175781A (zh) * 2023-05-23 2025-12-19 朗姆研究公司 在沟槽特征中的抑制式原子层沉积
CN121310847B (zh) * 2025-12-11 2026-02-24 合肥晶合集成电路股份有限公司 半导体结构及其键合方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI378533B (en) * 2006-08-30 2012-12-01 Lam Res Corp Methods and apparatus for barrier interface preparation of copper interconnect

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4949671A (en) * 1985-10-24 1990-08-21 Texas Instruments Incorporated Processing apparatus and method
JP3911643B2 (ja) * 1995-07-05 2007-05-09 富士通株式会社 埋め込み導電層の形成方法
US6042623A (en) * 1998-01-12 2000-03-28 Tokyo Electron Limited Two-wafer loadlock wafer processing apparatus and loading and unloading method therefor
US6017820A (en) * 1998-07-17 2000-01-25 Cutek Research, Inc. Integrated vacuum and plating cluster system
JP3974284B2 (ja) * 1999-03-18 2007-09-12 株式会社東芝 半導体装置の製造方法
US6734559B1 (en) * 1999-09-17 2004-05-11 Advanced Micro Devices, Inc. Self-aligned semiconductor interconnect barrier and manufacturing method therefor
US6423636B1 (en) * 1999-11-19 2002-07-23 Applied Materials, Inc. Process sequence for improved seed layer productivity and achieving 3mm edge exclusion for a copper metalization process on semiconductor wafer
US6890853B2 (en) * 2000-04-25 2005-05-10 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US20040040504A1 (en) * 2002-08-01 2004-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
US20050274621A1 (en) * 2004-06-10 2005-12-15 Zhi-Wen Sun Method of barrier layer surface treatment to enable direct copper plating on barrier metal
US20060033678A1 (en) * 2004-01-26 2006-02-16 Applied Materials, Inc. Integrated electroless deposition system
US7309658B2 (en) * 2004-11-22 2007-12-18 Intermolecular, Inc. Molecular self-assembly in substrate processing
KR100613388B1 (ko) * 2004-12-23 2006-08-17 동부일렉트로닉스 주식회사 다마신법을 이용한 구리 배선층을 갖는 반도체 소자 및 그형성 방법
KR100718804B1 (ko) * 2005-11-15 2007-05-16 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI378533B (en) * 2006-08-30 2012-12-01 Lam Res Corp Methods and apparatus for barrier interface preparation of copper interconnect

Also Published As

Publication number Publication date
TWI462178B (zh) 2014-11-21
JP2010503203A (ja) 2010-01-28
WO2008027205A3 (en) 2008-04-24
MY162187A (en) 2017-05-31
TW201246376A (en) 2012-11-16
SG174105A1 (en) 2011-09-29
TW200834726A (en) 2008-08-16
KR20090045302A (ko) 2009-05-07
US20090304914A1 (en) 2009-12-10
WO2008027205A2 (en) 2008-03-06
KR101423349B1 (ko) 2014-07-24
JP5420409B2 (ja) 2014-02-19

Similar Documents

Publication Publication Date Title
TWI453822B (zh) 用以改善銅與阻隔層間之黏接的自組裝單層膜
JP5484053B2 (ja) 銅配線のバリア界面調整のための方法および装置
CN101548030A (zh) 用于增强铜和阻挡层之间粘结的自组装单层
CN101558186B (zh) 对基板表面做预先处理以进行金属沉积的工艺和集成系统
US6281589B1 (en) System of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides
CN102061469B (zh) 用于阻障层表面钝化的方法和系统
KR101094125B1 (ko) 배리어와 구리 금속화물 간에 낮은 계면 산화물 접촉을 위한 방법 및 시스템
US7867897B2 (en) Low leakage metal-containing cap process using oxidation
KR20090052331A (ko) 금속 증착을 위해 기판 표면을 가공하는 프로세스 및 통합 시스템
CN103081089A (zh) 半导体装置的制造方法
KR101487564B1 (ko) 구리 상호접속부의 배리어 계면 제작 방법 및 장치
JP2012074608A (ja) 配線形成方法
US6784093B1 (en) Copper surface passivation during semiconductor manufacturing

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees