TWI452257B - State measurement device and state measurement method - Google Patents

State measurement device and state measurement method Download PDF

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Publication number
TWI452257B
TWI452257B TW098111945A TW98111945A TWI452257B TW I452257 B TWI452257 B TW I452257B TW 098111945 A TW098111945 A TW 098111945A TW 98111945 A TW98111945 A TW 98111945A TW I452257 B TWI452257 B TW I452257B
Authority
TW
Taiwan
Prior art keywords
film
light
substrate
value
measuring device
Prior art date
Application number
TW098111945A
Other languages
English (en)
Chinese (zh)
Other versions
TW201003035A (en
Inventor
Kunikazu Taguchi
Makoto Okawauchi
Original Assignee
Otsuka Denshi Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Otsuka Denshi Kk filed Critical Otsuka Denshi Kk
Publication of TW201003035A publication Critical patent/TW201003035A/zh
Application granted granted Critical
Publication of TWI452257B publication Critical patent/TWI452257B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65H—HANDLING THIN OR FILAMENTARY MATERIAL, e.g. SHEETS, WEBS, CABLES
    • B65H7/00—Controlling article feeding, separating, pile-advancing, or associated apparatus, to take account of incorrect feeding, absence of articles, or presence of faulty articles
    • B65H7/02—Controlling article feeding, separating, pile-advancing, or associated apparatus, to take account of incorrect feeding, absence of articles, or presence of faulty articles by feelers or detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
TW098111945A 2008-04-30 2009-04-10 State measurement device and state measurement method TWI452257B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008118322A JP5358822B2 (ja) 2008-04-30 2008-04-30 状態測定装置および状態測定方法

Publications (2)

Publication Number Publication Date
TW201003035A TW201003035A (en) 2010-01-16
TWI452257B true TWI452257B (zh) 2014-09-11

Family

ID=41391079

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098111945A TWI452257B (zh) 2008-04-30 2009-04-10 State measurement device and state measurement method

Country Status (3)

Country Link
JP (1) JP5358822B2 (ko)
KR (1) KR101561702B1 (ko)
TW (1) TWI452257B (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012189544A (ja) * 2011-03-14 2012-10-04 Toray Eng Co Ltd 膜厚むら検査装置及び方法
JP6210473B2 (ja) * 2012-08-03 2017-10-11 国立大学法人山形大学 有機光学デバイス及びこれを用いた有機電子デバイス
JP2015018770A (ja) * 2013-07-12 2015-01-29 パナソニックＩｐマネジメント株式会社 有機エレクトロルミネッセンス素子及び照明装置
JP7041594B2 (ja) * 2018-06-20 2022-03-24 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3985447A (en) * 1975-08-29 1976-10-12 Bell Telephone Laboratories, Incorporated Measurement of thin films by polarized light
EP0150945A2 (en) * 1984-02-02 1985-08-07 Lawrence S. Canino Method and apparatus for measuring properties of thin materials
JPH03226610A (ja) * 1990-01-31 1991-10-07 Kurabo Ind Ltd 多層構造体の赤外線厚み測定装置
WO2002088683A1 (en) * 2001-04-30 2002-11-07 The Board Of Trustees Of The University Of Illinois Method and apparatus for characterization of ultrathin silicon oxide films using mirror-enhanced polarized reflectance fourier transform infrared spectroscopy
CN1246664C (zh) * 1999-08-06 2006-03-22 热生物之星公司 用于确定由基质承载的受测样本薄膜厚度的装置及方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0458139A (ja) * 1990-06-27 1992-02-25 Kurabo Ind Ltd 赤外線光学装置
JP2006300811A (ja) * 2005-04-22 2006-11-02 Hitachi Displays Ltd 薄膜の膜厚測定方法、多結晶半導体薄膜の形成方法、半導体デバイスの製造方法、およびその製造装置、並びに画像表示装置の製造方法
JP4831818B2 (ja) * 2006-04-14 2011-12-07 三菱重工業株式会社 光電変換層評価装置及び光電変換層の評価方法
JP4813292B2 (ja) * 2006-08-25 2011-11-09 株式会社昭和真空 有機薄膜の膜厚測定装置及び有機薄膜形成装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3985447A (en) * 1975-08-29 1976-10-12 Bell Telephone Laboratories, Incorporated Measurement of thin films by polarized light
EP0150945A2 (en) * 1984-02-02 1985-08-07 Lawrence S. Canino Method and apparatus for measuring properties of thin materials
JPH03226610A (ja) * 1990-01-31 1991-10-07 Kurabo Ind Ltd 多層構造体の赤外線厚み測定装置
CN1246664C (zh) * 1999-08-06 2006-03-22 热生物之星公司 用于确定由基质承载的受测样本薄膜厚度的装置及方法
WO2002088683A1 (en) * 2001-04-30 2002-11-07 The Board Of Trustees Of The University Of Illinois Method and apparatus for characterization of ultrathin silicon oxide films using mirror-enhanced polarized reflectance fourier transform infrared spectroscopy

Also Published As

Publication number Publication date
KR101561702B1 (ko) 2015-10-19
KR20090115065A (ko) 2009-11-04
JP2009265059A (ja) 2009-11-12
JP5358822B2 (ja) 2013-12-04
TW201003035A (en) 2010-01-16

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