TWI451599B - 具有半導體本體、絕緣層和平面導電結構之光電組件及其製造方法 - Google Patents

具有半導體本體、絕緣層和平面導電結構之光電組件及其製造方法 Download PDF

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Publication number
TWI451599B
TWI451599B TW099129447A TW99129447A TWI451599B TW I451599 B TWI451599 B TW I451599B TW 099129447 A TW099129447 A TW 099129447A TW 99129447 A TW99129447 A TW 99129447A TW I451599 B TWI451599 B TW I451599B
Authority
TW
Taiwan
Prior art keywords
semiconductor body
insulating layer
metal bump
metal
substrate
Prior art date
Application number
TW099129447A
Other languages
English (en)
Chinese (zh)
Other versions
TW201123540A (en
Inventor
卡爾 維德納
瑞夫 渥斯
阿塞 卡坦巴克
華特 威吉勒特
伯恩 巴克曼
奧利佛 伍茲
珍 瑪菲德
Original Assignee
歐斯朗奧托半導體股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 歐斯朗奧托半導體股份有限公司 filed Critical 歐斯朗奧托半導體股份有限公司
Publication of TW201123540A publication Critical patent/TW201123540A/zh
Application granted granted Critical
Publication of TWI451599B publication Critical patent/TWI451599B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/652—Cross-sectional shapes
    • H10W70/6523—Cross-sectional shapes for connecting to pads at different heights at the same side of the package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/10—Configurations of laterally-adjacent chips

Landscapes

  • Led Device Packages (AREA)
TW099129447A 2009-09-03 2010-09-01 具有半導體本體、絕緣層和平面導電結構之光電組件及其製造方法 TWI451599B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009039890A DE102009039890A1 (de) 2009-09-03 2009-09-03 Optoelektronisches Bauelement mit einem Halbleiterkörper, einer Isolationsschicht und einer planaren Leitstruktur und Verfahren zu dessen Herstellung

Publications (2)

Publication Number Publication Date
TW201123540A TW201123540A (en) 2011-07-01
TWI451599B true TWI451599B (zh) 2014-09-01

Family

ID=43086284

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099129447A TWI451599B (zh) 2009-09-03 2010-09-01 具有半導體本體、絕緣層和平面導電結構之光電組件及其製造方法

Country Status (8)

Country Link
US (1) US20120228663A1 (https=)
EP (1) EP2474048A1 (https=)
JP (1) JP5675816B2 (https=)
KR (1) KR20120055723A (https=)
CN (1) CN102484171B (https=)
DE (1) DE102009039890A1 (https=)
TW (1) TWI451599B (https=)
WO (1) WO2011026709A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11631788B2 (en) 2020-11-18 2023-04-18 Lextar Electronics Corporation Light-emitting diode structure for improving bonding yield

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130214418A1 (en) * 2012-01-12 2013-08-22 King Dragon International Inc. Semiconductor Device Package with Slanting Structures
US20130181227A1 (en) * 2012-01-12 2013-07-18 King Dragon International Inc. LED Package with Slanting Structure and Method of the Same
US20130181351A1 (en) * 2012-01-12 2013-07-18 King Dragon International Inc. Semiconductor Device Package with Slanting Structures

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070131958A1 (en) * 2005-12-14 2007-06-14 Advanced Optoelectronic Technology Inc. Single chip with multi-LED
US20080179611A1 (en) * 2007-01-22 2008-07-31 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2888385B2 (ja) * 1991-08-22 1999-05-10 京セラ株式会社 受発光素子アレイのフリップチップ接続構造
US6547249B2 (en) * 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
TWI249148B (en) * 2004-04-13 2006-02-11 Epistar Corp Light-emitting device array having binding layer
US6885101B2 (en) * 2002-08-29 2005-04-26 Micron Technology, Inc. Methods for wafer-level packaging of microelectronic devices and microelectronic devices formed by such methods
US6876008B2 (en) * 2003-07-31 2005-04-05 Lumileds Lighting U.S., Llc Mount for semiconductor light emitting device
DE10353679A1 (de) 2003-11-17 2005-06-02 Siemens Ag Kostengünstige, miniaturisierte Aufbau- und Verbindungstechnik für LEDs und andere optoelektronische Module
KR101047683B1 (ko) * 2005-05-17 2011-07-08 엘지이노텍 주식회사 와이어 본딩이 불필요한 발광소자 패키징 방법
KR100723247B1 (ko) * 2006-01-10 2007-05-29 삼성전기주식회사 칩코팅형 ｌｅｄ 패키지 및 그 제조방법
US7439548B2 (en) * 2006-08-11 2008-10-21 Bridgelux, Inc Surface mountable chip
US20080121911A1 (en) * 2006-11-28 2008-05-29 Cree, Inc. Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same
US9024349B2 (en) * 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
DE102007011123A1 (de) * 2007-03-07 2008-09-11 Osram Opto Semiconductors Gmbh Licht emittierendes Modul und Herstellungsverfahren für ein Licht emittierendes Modul
TWI372478B (en) * 2008-01-08 2012-09-11 Epistar Corp Light-emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070131958A1 (en) * 2005-12-14 2007-06-14 Advanced Optoelectronic Technology Inc. Single chip with multi-LED
US20080179611A1 (en) * 2007-01-22 2008-07-31 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11631788B2 (en) 2020-11-18 2023-04-18 Lextar Electronics Corporation Light-emitting diode structure for improving bonding yield

Also Published As

Publication number Publication date
EP2474048A1 (de) 2012-07-11
WO2011026709A1 (de) 2011-03-10
JP2013504187A (ja) 2013-02-04
KR20120055723A (ko) 2012-05-31
JP5675816B2 (ja) 2015-02-25
CN102484171A (zh) 2012-05-30
DE102009039890A1 (de) 2011-03-10
US20120228663A1 (en) 2012-09-13
CN102484171B (zh) 2015-01-14
TW201123540A (en) 2011-07-01

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