CN102484171A - 具有半导体本体、绝缘层和平面导电结构的光电子器件及其制造方法 - Google Patents
具有半导体本体、绝缘层和平面导电结构的光电子器件及其制造方法 Download PDFInfo
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Abstract
设计了一种光电子器件(10),其具有带有辐射出射侧(20)的至少一个半导体本体(2)。所述半导体本体(2)借助与辐射出射侧(20)对置的侧设置在衬底(1)上,其中在辐射出射侧(20)上设置有至少一个电端子区域(22)。在该电端子区域(22)上设置有金属化突出部(3)。此外,半导体本体(2)至少局部地设有绝缘层(4),其中所述金属化突出部(3)伸出绝缘层(4)。在绝缘层(4)上设置至少一个平面导电结构(5)用于半导体本体(2)的平面接触,所述导电结构与电端子区域(22)通过金属化突出部(3)导电连接。另外,提出了一种用于制造这种光电子器件(10)的方法。
Description
本专利申请要求德国专利申请10 2009 039 890.2的优先权,其公开内容通过引用结合于此。
本发明涉及一种光电子器件,其具有半导体本体、绝缘层和用于半导体本体的平面接触的平面导电结构。此外,本发明涉及一种用于制造光电子器件的方法。
例如从文献DE 103 53 679A1中已知具有被平面接触的半导体本体的器件。该器件尤其具有衬底、设置在衬底上的光电子半导体本体和绝缘层,其中绝缘层在衬底和光电子半导体本体之上引导。为了接触光电子半导体本体,平面导电结构以金属化部的形式在绝缘层之上引向半导体本体的接触部位,并且引向衬底的带状导线。
然而在常规的平面接触技术中,必须暴露半导体本体的端子区域,以便可以借助平面导电结构导电接触半导体本体。特别是在这种情况下,必须将半导体本体的端子区域中的绝缘层移除。常规的平面接触技术在这里将激光烧蚀工艺用于暴露半导体本体的端子区域。在此,必须近乎无残留地移除端子区域上的绝缘层。如果没有无残留地移除绝缘层,则会在器件工作时影响、尤其是劣化功率。此外,没有无残留地移除绝缘层会引起提高的功率输入,由此会不利地损坏半导体本体。
本发明以如下目的为基础:提供改善的光电子器件,其特别是具有小的结构高度和同时可靠的工作功率,并且此外通过简化的制造方法表现出色。
所述目的通过具有权利要求1中所述特征的光电子器件和其具有权利要求9中所述特征的制造方法得以实现。该器件和该方法的有利实施形式和优选改进方案是从属权利要求的主题。
根据本发明设计了一种光电子器件,其具有带有辐射出射侧的至少一个半导体本体。半导体本体借助与辐射出射侧对置的侧设置在衬底上,其中在所述辐射出射侧上设置有至少一个电端子区域。在电端子区域上设置有金属化突出部。此外,半导体本体至少局部地设有绝缘层,其中金属化突出部伸出绝缘层。在绝缘层上设置至少一个平面导电结构用于半导体本体的平面接触,该平面导电结构与电端子区域通过金属化突出部导电连接。
通过半导体本体的平面接触有利地获得器件的特别小的结构高度。因此可以有利地提供紧凑的器件。有利地,可以实现将导电结构设置到邻近半导体本体处,由此得到特别小的器件结构高度。因此,尤其能够实现例如将光学元件设置到邻近半导体本体处。
光学元件特别是这样的构件,其有针对性地影响从半导体本体发射的辐射,特别是改变发光特性,例如透镜。
此外,通过半导体本体的端子区域上的、伸出绝缘层的金属化突出部可以避免在半导体本体的电端子区域之上的绝缘层的激光烧蚀工艺,由此可以避免、尤其是阻止损害半导体本体的端子区域。尤其能够实现均匀、无干扰的端子区域表面,由此可以避免影响半导体本体的工作功率。于是有利地可以实现可靠的器件。
金属化突出部例如是具有金属材料的突部。在此,金属化突出部不必具有特殊的形状。特别是金属化突出部伸出绝缘层。例如,金属化突出部从绝缘层的与半导体本体对置的表面伸出。因此,金属化突出部特别是在辐射出射侧上具有比绝缘层更大的高度。优选地,金属化突出部完全地穿过绝缘层。
金属化突出部对于本领域技术人员特别也作为“凸点(Bumps)”已知。
金属化突出部特别是器件的与半导体本体端子区域和平面导电结构相独立的构件。例如,金属化突出部优选粘贴或焊接在端子区域上。
半导体本体优选是半导体芯片,特别优选是发光二极管(LED)或激光二极管。
半导体本体具有优选发射辐射的有源层。所述有源层优选具有pn结、双异质结结构、单量子阱结构(SQW,single quantum well)或者多量子阱结构(MQW,multi quantum well),用于产生辐射。
优选地,半导体本体以氮化物半导体、磷化物半导体或砷化物半导体为基础。优选地,半导体本体实现为薄膜半导体本体。薄膜半导体本体特别是在其制造中生长衬底脱落的半导体本体。
在光电子器件的一个优选扩展方案中,金属化突出部是所谓的“钉头凸点(Studbump)”。例如,钉头凸点是缆线、优选为被挤压的金线(Au线)。所述缆线特别是设置在半导体本体的端子区域上,该端子区域优选构成为接触垫。钉头凸点是本领域技术人员已知的,并且因此在这里不会进一步地阐述。
在光电子器件的另一优选扩展方案中,金属化突出部是所谓的“焊球(Solder-ball)”,例如焊接球或“倒装芯片凸点(Flip Chip Bump)”。在这里,焊接球优选是任意可以焊接在端子区域上的金属体。特别是焊接球不可以只理解为球状体。此外,也理解为任意似球体的本体,例如柱状体等等。还有仅在背离辐射侧的面上具有圆化部的本体在这里也理解为术语焊接球。还有圆柱形本体在所述申请范围内也理解为术语焊接球。焊球、焊接球和倒装芯片凸点是本领域技术人员已知的,并且因此在此不进一步阐述。
在光电子器件的一个优选扩展方案中,金属化突出部包括镍金化合物(Ni/Au-化合物)和/或镍钯化合物(Ni/Pd化合物)。
优选地,金属化突出部是导电的,并且将平面导电结构与半导体本体的电端子区域连接,使得半导体本体借助金属化突出部被导电接触。绝缘层优选地在金属化突出部的区域中具有穿通部,金属化突出部完全地穿过所述穿通部。
在光电子器件的另一优选扩展方案中,绝缘层对于从半导体本体发射的辐射是透明的。优选地,绝缘层对于从半导体本体发射的辐射是至少部分透射辐射的。从半导体本体发射的辐射于是可以通过绝缘层耦合输出,而在此并不遭受主要的光学损耗。因此可以有利地减少在绝缘层中吸收半导体本体所发射的辐射,使得器件的效率有利地提高。
绝缘层优选是膜、漆或聚合物层。
在光电子器件的另一优选扩展方案中,在绝缘层中设置有转换材料。
绝缘层中的所述转换材料优选吸收至少部分的、从半导体本体发射的辐射,并且再发射其他的波长范围中的次级辐射。因此,器件发射混合辐射,其包括从半导体本体发射的辐射和转换材料的次级辐射。优选地,于是例如可以产生发射白色色度坐标中的混合辐射的器件。
在光电子器件的另一优选扩展方案中,将至少一个另外的半导体本体设置在衬底上。特别是所述另外的半导体本体与所述半导体本体间横向隔地设置。所述另外的半导体本体优选地如第一半导体本体那样构建。特别是所述另外的半导体本体具有辐射出射侧,在所述半导体本体上设置有至少一个电端子区域,在所述电端子区域上设置有金属化突出部。此外,所述另外的半导体本体至少部分地设有绝缘层,其中金属化突出部穿过绝缘层,特别是伸出绝缘层。
优选地,半导体本体和所述另外的半导体本体借助另外的平面导电结构彼此导电连接。
通过将所述使半导体本体彼此导电连接的另外的平面导电结构,特别是能够有利地提供紧凑的模块,因为半导体本体能够以节省位置的方式和方法设置在衬底上。因此有利地减小器件的基面。
根据本发明的用于制造光电子模块的方法包括特别是下面的步骤:
a)将半导体本体借助与辐射出射侧背离的侧设置在衬底上,
b)将金属化突出部施加在半导体本体的电端子区域上,所述电端子区域设置在辐射出射侧上,
c)随后将绝缘层施加在半导体本体上,使得金属化突出部伸出绝缘层。
在将绝缘层施加在半导体本体上之前,半导体本体的电端子区域相应地设有金属化突出部(“凸点”)。随后施加绝缘层、优选为膜,使得金属化突出部在施加绝缘层之后从绝缘层表面伸出。因此有利地取消激光烧蚀在半导体本体的电端子区域上的绝缘层,由此可以有利地阻止损害半导体本体的端子区域。特别是,因此可以有利地实现均匀的、无干扰的端子区域面,其优选对半导体本体的工作功率不会起负面作用。
因此,特别是可以实现改进的制造方法,在其中防止了半导体本体端子区域的损害,一般来说借助激光烧蚀工艺至少部分地造成所述损害。此外,在根据本发明的方法中优选省去将半导体本体的端子区域暴露,特别是省去将在半导体本体的端子区域之上的绝缘层移除的方法步骤,使得可以实现简化的制造方法。
为了在半导体本体的端子区域上产生金属化突出部,优选使用下面的方法:
—丝网印刷方法,
—回流方法,
—焊球植球(Solder-Ball-Placement)。
金属化突出部优选是钉头凸点或焊球,其中例如将粘贴或焊接工艺用于在电端子区域上施加金属化突出部。
为了将绝缘层在半导体本体、衬底和金属化突出部上施加为使得金属化突出部不具有绝缘层的绝缘材料,例如使用下面的方法:
-以相应的压力层压绝缘层、特别是膜,
-丝网印刷在金属化突出部区域中具有凹部的绝缘材料,
-模制在半导体本体的端子区域中具有或不具有凹部的绝缘材料,
-将绝缘层压紧在金属化突出部上,使得金属化突出部挤压穿过绝缘层。
优选地,绝缘层相应地施加为使得一个或多个金属化突出部不具有绝缘层的材料,然而半导体本体和衬底在金属化突出部之外的区域中被绝缘层包封、特别是覆盖。
然而如果在施加绝缘层之后在金属化突出部上存在绝缘层的剩余部分,则可以借助压印工艺、磨削工艺、激光烧蚀、等离子体工艺或快速切削工艺进一步将金属化突出部暴露,使得能够借助金属化突出部实现电接触半导体本体。因此,特别是可以将在金属化突出部之上的绝缘层彻底地开放。
进一步地,半导体本体在辐射出射侧上可以具有其他的端子区域,在所述端子区域上分别施加金属化突出部,其中在这种情况下,绝缘层在金属化突出部区域中分别具有穿通部,使得金属化突出部分别完全地穿过绝缘层。
通过这种方法制造的器件相应地具有至少一个半导体本体,其除了金属化突出部的区域之外优选完全被绝缘层包封。此外,在半导体本体上施加绝缘层的方法步骤同样可以包括在衬底的如下区域中将绝缘层施加在衬底上,这些区域位于半导体本体的一个或多个安装区域之外。
在半导体本体上和衬底上施加绝缘层之后,进一步地施加一个平面导电结构或多个平面导电结构,其例如以金属结构为形式。为此可能的方法对于本领域技术人员例如从文献DE 103 53 679A1中已知,其公开内容在此明确地结合到本申请中。
光电子器件和其制造方法的其他特征、优点,优选扩展方案和目的从下面的结合图1至3阐述的实施例获得。其中:
图1至3分别示出根据本发明的器件的实施例的示意性横截面。
相同的或同作用的组成部分分别设有相同的附图标记。示出的组成部分以及组成部分彼此之间的大小关系不应视为是合乎比例的。
在图1中示出光电子器件,其具有衬底1和设置于该衬底上的半导体本体2。半导体本体2优选具有发射辐射的有源层,用于产生电磁辐射。例如,半导体本体2是半导体芯片,优选为发光二极管(LED)或者激光二极管。
在图1的实施例中,半导体本体2在朝向衬底1的侧上具有接触面23。特别是半导体本体通过接触面23与设置在衬底1上的带状导线或者与衬底1导电接触,衬底1在这种情况下具有导电材料。
在半导体本体2的背离衬底1的侧上设置有辐射出射侧20。优选大部分从有源层发射的辐射从半导体本体2通过辐射出射侧20耦合输出。从半导体本体2发射的辐射在实施例1至3中分别通过箭头示出。
在半导体本体2的辐射出射侧20上设置电端子区域22。在图1的实施例中,电端子区域22设置在辐射出射侧20的侧面区域中,使得电端子区域不必对于从半导体本体2发射的辐射透明。
在电端子区域22上设置金属化突出部3。金属化突出部3例如可以是钉头凸点、焊球或焊接球。特别是金属化突出部具有导电的材料。金属化突出部3优选是器件的独立的构件。特别是金属化突出部3与半导体本体2的电端子区域22相独立。金属化突出部3优选包含镍金化合物。
在半导体本体2上,特别是在辐射出射侧20上设置有绝缘层4。绝缘层4尤其在围绕半导体本体2的区域中设置在衬底1上。
优选地,除了电端子区域22之外,绝缘层4完全地围绕半导体本体2。优选地,绝缘层对于从半导体本体2发射的辐射是透明的,使得从半导体本体2发射的辐射可以在辐射出射侧20从器件10耦合输出。
金属化突出部3伸出绝缘层4。特别是在金属化突出部3的区域中没有设置绝缘层4。金属化突出部3在辐射出射侧20上的高度优选大于绝缘层4在辐射出射侧20上的高度。特别是在金属化突出部3上没有设置绝缘层4,特别是没有绝缘层4的绝缘材料。
在绝缘层4上设置有平面导电结构5,用于半导体本体2的平面接触。平面导电结构5特别是与半导体本体2的电端子区域22通过金属化突出部3导电连接。金属化突出部3优选是器件10的与平面导电结构5并且与端子区域22相独立的部件。
半导体本体2优选可以借助在半导体本体2的朝向衬底1的侧上的接触面23并且借助电端子区域22通过金属化突出部3和平面导电结构5被导电接触。
因为在图1的实施例中,电端子区域22、金属化突出部3和平面导电结构5设置在半导体本体2的辐射出射侧20的侧面区域中,所以通过这些部件几乎不影响、特别是几乎不减小从半导体本体2发射的辐射从器件10出来的耦合输出。通过侧向设置平面接触结构以及金属化突出部3和端子区域22,可以减少在器件的这些部件中会出现的吸收进程,因此有利地改善了器件的辐射效率。
图1的实施例特别具有的优点是:半导体本体2的电端子区域22具有均匀的、无干扰的表面。电端子区域22的均匀的、无干扰的表面是如此实现的:用于将端子区域22从绝缘层4暴露的常规激光烧蚀工艺不是必须的,因为电端子区域22借助具有比绝缘层更大高度的金属化突出部3来与平面导电结构5导电连接。
用于制造根据图1的光电子器件的方法特别是具有如下的方法步骤:
将半导体本体2借助背离辐射出射侧20的侧设置在衬底1上,接着将金属化突出部3施加在半导体本体2的电端子区域22上,所述金属化突出部3设置在辐射出射侧20上,并且随后将绝缘层4施加在半导体本体2上,使得金属化突出部3伸出绝缘层4。
这种制造方法特别具有的优点是:不必使端子区域22从绝缘层4暴露,因为电接触通过伸出绝缘层4的金属化突出部3实现。因此,有利地例如并不通过激光烧蚀工艺影响端子区域22,使得可以实现均匀、无干扰的端子区域面。
在此,绝缘层4施加为使得金属化突出部3伸出绝缘层4的表面。特别是金属化突出部3完全地穿过绝缘层4。这种效果例如可以借助下面的方法之一实现:
—以相应的压力层压绝缘层4、特别是膜,
—丝网印刷在金属化突出部3的区域中具有凹部的绝缘材料,
—模制绝缘材料,
—将绝缘层4压紧在器件10上,使得金属化突出部3压入绝缘层4中,使得金属化突出部3优选地完全穿过绝缘层4。
在这种方法中,在施加绝缘层4之后,金属化突出部3优选不具有绝缘层4的绝缘材料。但是,如果金属化突出部3不完全地穿过绝缘层4,那么可以将绝缘层4的绝缘材料在金属化突出部3的区域中完全移除,例如通过压印工艺、磨削工艺、激光烧蚀工艺、等离子体工艺或快速切削工艺。
金属化突出部3例如借助丝网印刷或回流方法施加在电端子区域22上。可替代地,金属化突出部3可以借助粘合或焊接工艺施加在端子区域22上。在这种情况下,金属化突出部3例如是焊球(“焊球植球(Solder-Ball-Placement)”)。
例如,本领域技术人员从文献DE 103 53 679A1中已知将平面导电结构5施加到绝缘层4上的方法,并且因此在这里不会进一步地讨论。
在图2中示出根据本发明的光电子器件的另一实施例。图2的实施例与图1的实施例的区别在于在绝缘层4中设置有转换材料6。转换材料6吸收半导体本体2发射的辐射的至少一部分,并且再发射次级辐射,该次级辐射具有与从半导体本体2发射的辐射的波长范围不同的波长范围。因此,可以有利地实现如下器件,该器件具有混合辐射,所述混合辐射具有从半导体本体2发射的辐射和次级辐射。因此,器件例如可以实现为发射白色光。
除此之外,图2的实施例与图1的实施例相一致。
图3示出根据本发明的器件的另一实施例。与在图1中示出的实施例不同的是在图3的实施例中将另一半导体本体2b设置在衬底1上。特别是半导体本体2a与另一半导体本体2b并排设置。优选地,半导体本体2a、2b彼此之间具有小的距离。
优选地,所述另一半导体本体2b如半导体本体2a那样构造。特别是该另一半导体本体2b具有与衬底1对置的辐射出射侧20b。此外,该另一半导体本体2b具有电端子区域22,在所述电端子区域上分别设置有金属化突出部3。在半导体本体2b的背离衬底1的侧上设置有绝缘层4,所述绝缘层4至少局部地包封半导体本体2b。金属化突出部3伸出绝缘层4,使得电端子区域22能够借助金属化突出部3被电接触。
与图1中示出的实施例不同地,半导体本体2a、2b在辐射出射侧20a、20b上分别具有两个电端子区域22,在所述电端子区域上分别设置金属化突出部3。因此,用于半导体本体2a、2b的电接触的、如在图1和2的实施例中示出的接触面23在图3的实施例中不是必须的。
电端子区域22和金属化突出部3优选设置在辐射出射侧20a的对置的侧上,特别是分别设置在辐射出射侧20a、20b的边缘区域中。
半导体本体2a和另一半导体本体2b借助其他的平面导电结构5c彼此电连接。特别是半导体本体2a的金属化突出部3之一与另一半导体本体2b的金属化突出部3之一通过另外的平面导电结构5c电接触。并未分别与其他的半导体本体2a、2b导电连接的金属化突出部3分别与平面导电结构5a、5b连接,使得半导体本体2a、2b借助电端子区域22和金属化突出部3来通过平面导电结构5a、5b、5c电接触,特别是可以被从外部电连接。
图3的器件10相应地具有多个、特别是两个半导体本体2a、2b,其互相处于电接触,并且可以通过平面导电结构5a、5b被从外部电连接。通过这种接触能够实现具有彼此间距小的多个半导体本体2a、2b的器件10,使得这种器件10的基面有利地减小。具有多个半导体本体的小型化的器件10能够如此实现。
除此之外,图3的实施例与图1的实施例相一致。
本发明并不通过借助实施例的描述而局限于其。相反,本发明包括任意新的特征以及特征的任意组合,这特别是包括在权利要求中的特征的任意组合,即使所述特征或者所述组合本身在权利要求中或实施例中没有明确地说明。
Claims (15)
1.光电子器件(10),该光电子器件具有带有辐射出射侧(20)的至少一个半导体本体(2),所述半导体本体借助与所述辐射出射侧(20)对置的侧设置在衬底(1)上,其中
-在所述辐射出射侧(20)上设置有至少一个电端子区域(22),在所述电端子区域上设置有金属化突出部(3),
-所述半导体本体(2)至少局部地设有绝缘层(4),其中所述金属化突出部(3)伸出所述绝缘层(4),并且
-在所述绝缘层(4)上设置有至少一个平面导电结构(5),用于平面接触所述半导体本体(2),所述平面导电结构通过金属化突出部(3)与所述电端子区域(22)导电连接。
2.根据权利要求1所述的光电子器件,其中所述金属化突出部(3)是钉头凸点。
3.根据权利要求1所述的光电子器件,其中所述金属化突出部(3)是焊球。
4.根据前述权利要求之一所述的光电子器件,其中所述金属化突出部(3)包括镍金(Ni/Au)化合物和/或镍钯(Ni/Pd)化合物。
5.根据前述权利要求之一所述的光电子器件,其中所述绝缘层(4)对于从所述半导体本体(2)发射的辐射是透明的。
6.根据前述权利要求之一所述的光电子器件,其中在所述绝缘层(4)中设置有转换材料(6)。
7.根据前述权利要求之一所述的光电子器件,其中至少一个另外的半导体本体(2b)设置在所述衬底(1)上。
8.根据权利要求7所述的光电子器件,其中所述半导体本体(2a)和所述另外的半导体本体(2b)借助另外的平面导电结构(5c)彼此导电连接。
9.用于制造光电子器件(10)的方法,该方法具有以下方法步骤:
A)将半导体本体(2)借助与辐射出射侧(20)背离的侧设置在衬底(1)上,
B)将金属化突出部(3)施加在所述半导体本体(2)的电端子区域(22)上,所述电端子区域设置在所述辐射出射侧(20)上,
C)接着,将绝缘层(4)施加到所述半导体本体(2)上,使得所述金属化突出部(3)伸出所述绝缘层(4)。
10.根据权利要求9所述的方法,其中所述方法步骤B)包括丝网印刷方法或回流方法。
11.根据权利要求9所述的方法,其中所述金属化突出部(3)是焊球,其中所述方法步骤B)包括焊接工艺。
12.根据前述权利要求9至11之一所述的方法,其中所述方法步骤C)包括在压力下层压所述绝缘层(4)。
13.根据前述权利要求9至11之一所述的方法,其中所述方法步骤C)包括丝网印刷方法或模制方法。
14.根据前述权利要求9至11之一所述的方法,其中在所述方法步骤C)中将所述绝缘层(4)压紧到所述金属化突出部(3)上。
15.根据前述权利要求9至14之一所述的方法,其中所述方法步骤C)包括借助压印工艺、磨削工艺、激光烧蚀、等离子体工艺或快速切削工艺来暴露所述金属化突出部(3)。
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DE102009039890.2 | 2009-09-03 | ||
DE102009039890A DE102009039890A1 (de) | 2009-09-03 | 2009-09-03 | Optoelektronisches Bauelement mit einem Halbleiterkörper, einer Isolationsschicht und einer planaren Leitstruktur und Verfahren zu dessen Herstellung |
PCT/EP2010/061443 WO2011026709A1 (de) | 2009-09-03 | 2010-08-05 | Optoelektronisches bauelement mit einem halbleiterkörper, einer isolationsschicht und einer planaren leitstruktur und verfahren zu dessen herstellung |
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CN102484171A true CN102484171A (zh) | 2012-05-30 |
CN102484171B CN102484171B (zh) | 2015-01-14 |
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US (1) | US20120228663A1 (zh) |
EP (1) | EP2474048A1 (zh) |
JP (1) | JP5675816B2 (zh) |
KR (1) | KR20120055723A (zh) |
CN (1) | CN102484171B (zh) |
DE (1) | DE102009039890A1 (zh) |
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US20130181351A1 (en) * | 2012-01-12 | 2013-07-18 | King Dragon International Inc. | Semiconductor Device Package with Slanting Structures |
US20130181227A1 (en) * | 2012-01-12 | 2013-07-18 | King Dragon International Inc. | LED Package with Slanting Structure and Method of the Same |
US20130214418A1 (en) * | 2012-01-12 | 2013-08-22 | King Dragon International Inc. | Semiconductor Device Package with Slanting Structures |
TWI751809B (zh) | 2020-11-18 | 2022-01-01 | 隆達電子股份有限公司 | 增進接合良率的發光二極體結構 |
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2009
- 2009-09-03 DE DE102009039890A patent/DE102009039890A1/de not_active Withdrawn
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2010
- 2010-08-05 KR KR1020127008647A patent/KR20120055723A/ko not_active Application Discontinuation
- 2010-08-05 WO PCT/EP2010/061443 patent/WO2011026709A1/de active Application Filing
- 2010-08-05 JP JP2012527265A patent/JP5675816B2/ja not_active Expired - Fee Related
- 2010-08-05 EP EP10742132A patent/EP2474048A1/de not_active Withdrawn
- 2010-08-05 US US13/394,058 patent/US20120228663A1/en not_active Abandoned
- 2010-08-05 CN CN201080039409.4A patent/CN102484171B/zh not_active Expired - Fee Related
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TW201123540A (en) | 2011-07-01 |
CN102484171B (zh) | 2015-01-14 |
EP2474048A1 (de) | 2012-07-11 |
US20120228663A1 (en) | 2012-09-13 |
JP5675816B2 (ja) | 2015-02-25 |
TWI451599B (zh) | 2014-09-01 |
DE102009039890A1 (de) | 2011-03-10 |
KR20120055723A (ko) | 2012-05-31 |
WO2011026709A1 (de) | 2011-03-10 |
JP2013504187A (ja) | 2013-02-04 |
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