JP5134229B2 - 発光ダイオード素子、発光ダイオード素子の製造方法、及び発光ダイオード素子の固着構造 - Google Patents
発光ダイオード素子、発光ダイオード素子の製造方法、及び発光ダイオード素子の固着構造 Download PDFInfo
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- JP5134229B2 JP5134229B2 JP2006293060A JP2006293060A JP5134229B2 JP 5134229 B2 JP5134229 B2 JP 5134229B2 JP 2006293060 A JP2006293060 A JP 2006293060A JP 2006293060 A JP2006293060 A JP 2006293060A JP 5134229 B2 JP5134229 B2 JP 5134229B2
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- Prior art keywords
- emitting diode
- light emitting
- diode element
- wafer
- electrode pad
- Prior art date
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- Expired - Fee Related
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- 238000000034 method Methods 0.000 title description 31
- 238000004519 manufacturing process Methods 0.000 title description 21
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 230000000994 depressogenic effect Effects 0.000 claims description 14
- 229920005989 resin Polymers 0.000 claims description 14
- 239000011347 resin Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 8
- 229910000679 solder Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000347 anisotropic wet etching Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- HOBRTVXSIVSXIA-UHFFFAOYSA-N 1,2,3,5-tetrachloro-4-phenylbenzene Chemical compound ClC1=C(Cl)C(Cl)=CC(Cl)=C1C1=CC=CC=C1 HOBRTVXSIVSXIA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- NTTOTNSKUYCDAV-UHFFFAOYSA-N potassium hydride Chemical compound [KH] NTTOTNSKUYCDAV-UHFFFAOYSA-N 0.000 description 1
- 229910000105 potassium hydride Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
また、COBモジュール工程中に発生した不良品は、再活用するのがむずかしいという短所がある。
また、本発明は、接合性(Solder ability)を向上させた発光ダイオードを提供することにより、生産、流通及び使用中に発生可能な損傷を防止する。
図2〜図8は、本発明に係る発光ダイオード素子の製造方法を説明する図である。
このように前記金属膜31上にLEDチップ32をフリップボンディングした後には、図7に示すように、LEDチップ32が置かれた陥没部21の内部空間を樹脂を利用して充填して充填部33を形成し、前記充填部33の上側面は平らに形成する。
前記充填部33が形成された後には、ウエハ30の底面に電極を形成する。
本発明は、導電性ペーストを利用してパッドを形成し、電極がウエハの底面に伸びて、ウエハレベルのパッケージ化を可能にすることによって、低廉な製作単価と簡単な工程などの長所を実現することができる。
本発明に係る発光ダイオード素子によれば、発熱による熱的疲労及び機械的応力発生による断線を解消することができる。
Claims (2)
- 導電パターンが形成される基板と、
電気導電性を有するペーストから形成された電極パッドを下面に有する発光ダイオード素子と、
前記導電パターンと前記電極パッドとの接触部に提供され、前記基板と前記発光ダイオード素子とを接着することにより、前記基板の電源を前記発光ダイオード素子に印加させるソルダーと、が含まれ、
前記電極パッドは、スクリーンマスクが発光ダイオード素子の下面に置かれた状態で、スクイズにより前記ペーストが塗布された後、塗布された前記ペーストが硬化されて形成され、
前記電極パッドは、前記導電パターンにはんだ付けにより付着され、
前記発光ダイオード素子は、
シリコンウェハと、
前記ウェハの上面に陥没されて形成される陥没部と、
前記陥没部から前記ウェハの下面まで伸びる少なくとも1対の金属膜と、
前記陥没部の内部で前記金属膜と接触してボンディングされた少なくとも1つの発光ダイオードチップと、
前記陥没部の内部に樹脂が充填されて形成される充填部と、
前記ウェハの下面に伸びる金属膜に接触される前記電極パッドとを含み、
前記樹脂の上面と前記ウェハの上側面は、同一平面に形成され、
前記電極パッドは、下面が平らな導電性ペーストで形成されることを特徴とする発光ダイオード素子の固着構造。 - 前記ソルダーがリフローされて、前記導電パターンと前記電極パッドとを電気的に接続することを特徴とする請求項1に記載の発光ダイオード素子の固着構造。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0101771 | 2005-10-27 | ||
KR1020050101771A KR101181112B1 (ko) | 2005-10-27 | 2005-10-27 | 발광 다이오드, 발광 다이오드 제조 방법 및 발광 다이오드 모듈 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007123905A JP2007123905A (ja) | 2007-05-17 |
JP5134229B2 true JP5134229B2 (ja) | 2013-01-30 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006293060A Expired - Fee Related JP5134229B2 (ja) | 2005-10-27 | 2006-10-27 | 発光ダイオード素子、発光ダイオード素子の製造方法、及び発光ダイオード素子の固着構造 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8343784B2 (ja) |
JP (1) | JP5134229B2 (ja) |
KR (1) | KR101181112B1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101383357B1 (ko) | 2007-08-27 | 2014-04-10 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 그 제조방법 |
KR101417003B1 (ko) * | 2007-08-30 | 2014-07-09 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
KR20090058878A (ko) * | 2007-12-05 | 2009-06-10 | 삼성전자주식회사 | 발광 장치, 그의 제조 방법 및 그를 포함하는 액정 표시장치 |
DE102008019667A1 (de) | 2008-04-18 | 2009-10-22 | Ledon Lighting Jennersdorf Gmbh | LED-Modul mit einer Plattform mit einer Zentralausnehmung |
US8476645B2 (en) | 2009-11-13 | 2013-07-02 | Uni-Light Llc | LED thermal management |
US20120282767A1 (en) * | 2011-05-05 | 2012-11-08 | Stmicroelectronics Pte Ltd. | Method for producing a two-sided fan-out wafer level package with electrically conductive interconnects, and a corresponding semiconductor package |
KR101811689B1 (ko) * | 2011-07-06 | 2017-12-22 | 삼성전자주식회사 | 반도체 발광소자 제조방법 및 이에 이용되는 페이스트 도포장치 |
KR102221598B1 (ko) * | 2014-06-16 | 2021-03-02 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
DE102016111790A1 (de) * | 2016-06-28 | 2017-12-28 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen |
KR101947113B1 (ko) * | 2016-08-15 | 2019-02-12 | 주식회사 에스제이하이테크 | 투명 엘이디 디스플레이 패널 및 이를 이용한 디지털 사이니지 시스템 |
KR102333800B1 (ko) * | 2019-07-23 | 2021-12-03 | (주)라이타이저 | 확장형 전극패드를 갖는 픽셀 csp 제조방법 및 그 방법에 의해 제조되는 픽셀 csp |
KR102262748B1 (ko) * | 2019-07-31 | 2021-06-09 | (주)라이타이저 | 전극패드의 확장 및 영역 이동을 통한 디스플레이 장치의 제조 방법 및 그 방법에 의해 제조되는 디스플레이 장치 |
EP3944304A1 (en) * | 2020-07-20 | 2022-01-26 | Nexperia B.V. | A semiconductor device and a method of manufacture |
CN112928105B (zh) * | 2021-02-02 | 2022-10-25 | 华南理工大学 | 一种具有台阶电极的rgb器件及制备方法 |
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JPH06120229A (ja) | 1992-10-06 | 1994-04-28 | Rohm Co Ltd | 半導体部品におけるバンプ電極の形成方法及びバンプ電極付き半導体部品 |
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JP3145959B2 (ja) * | 1997-07-18 | 2001-03-12 | 東レエンジニアリング株式会社 | 電子部品の樹脂封止方法 |
JP3412152B2 (ja) * | 1999-06-08 | 2003-06-03 | サンケン電気株式会社 | 半導体発光装置 |
JP2001185640A (ja) * | 1999-12-24 | 2001-07-06 | Nec Corp | 表面実装型パッケージ及び電子部品並びに電子部品の製造方法 |
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JP2001345482A (ja) * | 2000-06-01 | 2001-12-14 | Toshiba Corp | 蛍光表示装置 |
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JP2005285925A (ja) | 2004-03-29 | 2005-10-13 | Stanley Electric Co Ltd | Led |
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-
2005
- 2005-10-27 KR KR1020050101771A patent/KR101181112B1/ko active IP Right Grant
-
2006
- 2006-10-26 US US11/586,648 patent/US8343784B2/en active Active
- 2006-10-27 JP JP2006293060A patent/JP5134229B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR101181112B1 (ko) | 2012-09-14 |
JP2007123905A (ja) | 2007-05-17 |
US20070099325A1 (en) | 2007-05-03 |
US8343784B2 (en) | 2013-01-01 |
KR20070045461A (ko) | 2007-05-02 |
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