CN102484171B - 具有半导体本体、绝缘层和平面导电结构的光电子器件及其制造方法 - Google Patents

具有半导体本体、绝缘层和平面导电结构的光电子器件及其制造方法 Download PDF

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Publication number
CN102484171B
CN102484171B CN201080039409.4A CN201080039409A CN102484171B CN 102484171 B CN102484171 B CN 102484171B CN 201080039409 A CN201080039409 A CN 201080039409A CN 102484171 B CN102484171 B CN 102484171B
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CN
China
Prior art keywords
semiconductor body
insulating layer
metallization
exit side
radiation exit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080039409.4A
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English (en)
Chinese (zh)
Other versions
CN102484171A (zh
Inventor
卡尔·魏德纳
拉尔夫·维尔特
阿克塞尔·卡尔滕巴赫尔
沃尔特·韦格莱特
贝恩德·巴克曼
奥利弗·武茨
扬·马费尔德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN102484171A publication Critical patent/CN102484171A/zh
Application granted granted Critical
Publication of CN102484171B publication Critical patent/CN102484171B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/652—Cross-sectional shapes
    • H10W70/6523—Cross-sectional shapes for connecting to pads at different heights at the same side of the package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/10—Configurations of laterally-adjacent chips

Landscapes

  • Led Device Packages (AREA)
CN201080039409.4A 2009-09-03 2010-08-05 具有半导体本体、绝缘层和平面导电结构的光电子器件及其制造方法 Expired - Fee Related CN102484171B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009039890A DE102009039890A1 (de) 2009-09-03 2009-09-03 Optoelektronisches Bauelement mit einem Halbleiterkörper, einer Isolationsschicht und einer planaren Leitstruktur und Verfahren zu dessen Herstellung
DE102009039890.2 2009-09-03
PCT/EP2010/061443 WO2011026709A1 (de) 2009-09-03 2010-08-05 Optoelektronisches bauelement mit einem halbleiterkörper, einer isolationsschicht und einer planaren leitstruktur und verfahren zu dessen herstellung

Publications (2)

Publication Number Publication Date
CN102484171A CN102484171A (zh) 2012-05-30
CN102484171B true CN102484171B (zh) 2015-01-14

Family

ID=43086284

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080039409.4A Expired - Fee Related CN102484171B (zh) 2009-09-03 2010-08-05 具有半导体本体、绝缘层和平面导电结构的光电子器件及其制造方法

Country Status (8)

Country Link
US (1) US20120228663A1 (https=)
EP (1) EP2474048A1 (https=)
JP (1) JP5675816B2 (https=)
KR (1) KR20120055723A (https=)
CN (1) CN102484171B (https=)
DE (1) DE102009039890A1 (https=)
TW (1) TWI451599B (https=)
WO (1) WO2011026709A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130214418A1 (en) * 2012-01-12 2013-08-22 King Dragon International Inc. Semiconductor Device Package with Slanting Structures
US20130181227A1 (en) * 2012-01-12 2013-07-18 King Dragon International Inc. LED Package with Slanting Structure and Method of the Same
US20130181351A1 (en) * 2012-01-12 2013-07-18 King Dragon International Inc. Semiconductor Device Package with Slanting Structures
TWI751809B (zh) 2020-11-18 2022-01-01 隆達電子股份有限公司 增進接合良率的發光二極體結構

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050224822A1 (en) * 2003-07-04 2005-10-13 Wen-Huang Liu Light-emitting diode array having an adhesive layer
US20070131958A1 (en) * 2005-12-14 2007-06-14 Advanced Optoelectronic Technology Inc. Single chip with multi-LED
US20070158669A1 (en) * 2006-01-10 2007-07-12 Samsung Electro-Mechanics Co., Ltd. Chip coated light emitting diode package and manufacturing method thereof
US20080179611A1 (en) * 2007-01-22 2008-07-31 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
JP2888385B2 (ja) * 1991-08-22 1999-05-10 京セラ株式会社 受発光素子アレイのフリップチップ接続構造
US6547249B2 (en) * 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
US6885101B2 (en) * 2002-08-29 2005-04-26 Micron Technology, Inc. Methods for wafer-level packaging of microelectronic devices and microelectronic devices formed by such methods
US6876008B2 (en) * 2003-07-31 2005-04-05 Lumileds Lighting U.S., Llc Mount for semiconductor light emitting device
DE10353679A1 (de) 2003-11-17 2005-06-02 Siemens Ag Kostengünstige, miniaturisierte Aufbau- und Verbindungstechnik für LEDs und andere optoelektronische Module
KR101047683B1 (ko) * 2005-05-17 2011-07-08 엘지이노텍 주식회사 와이어 본딩이 불필요한 발광소자 패키징 방법
US7439548B2 (en) * 2006-08-11 2008-10-21 Bridgelux, Inc Surface mountable chip
US20080121911A1 (en) * 2006-11-28 2008-05-29 Cree, Inc. Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same
US9024349B2 (en) * 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
DE102007011123A1 (de) * 2007-03-07 2008-09-11 Osram Opto Semiconductors Gmbh Licht emittierendes Modul und Herstellungsverfahren für ein Licht emittierendes Modul
TWI372478B (en) * 2008-01-08 2012-09-11 Epistar Corp Light-emitting device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050224822A1 (en) * 2003-07-04 2005-10-13 Wen-Huang Liu Light-emitting diode array having an adhesive layer
US20070131958A1 (en) * 2005-12-14 2007-06-14 Advanced Optoelectronic Technology Inc. Single chip with multi-LED
US20070158669A1 (en) * 2006-01-10 2007-07-12 Samsung Electro-Mechanics Co., Ltd. Chip coated light emitting diode package and manufacturing method thereof
US20080179611A1 (en) * 2007-01-22 2008-07-31 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method

Also Published As

Publication number Publication date
EP2474048A1 (de) 2012-07-11
WO2011026709A1 (de) 2011-03-10
JP2013504187A (ja) 2013-02-04
KR20120055723A (ko) 2012-05-31
JP5675816B2 (ja) 2015-02-25
CN102484171A (zh) 2012-05-30
DE102009039890A1 (de) 2011-03-10
US20120228663A1 (en) 2012-09-13
TWI451599B (zh) 2014-09-01
TW201123540A (en) 2011-07-01

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