JP5675816B2 - 半導体ボディとアイソレーション層と平面導体構造とを備えたオプトエレクトロニクス素子および該オプトエレクトロニクス素子の製造方法 - Google Patents

半導体ボディとアイソレーション層と平面導体構造とを備えたオプトエレクトロニクス素子および該オプトエレクトロニクス素子の製造方法 Download PDF

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JP5675816B2
JP5675816B2 JP2012527265A JP2012527265A JP5675816B2 JP 5675816 B2 JP5675816 B2 JP 5675816B2 JP 2012527265 A JP2012527265 A JP 2012527265A JP 2012527265 A JP2012527265 A JP 2012527265A JP 5675816 B2 JP5675816 B2 JP 5675816B2
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semiconductor body
isolation layer
metallized
ridge
metallized ridge
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JP2012527265A
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Japanese (ja)
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JP2013504187A (ja
JP2013504187A5 (https=
Inventor
ヴァイトナー カール
ヴァイトナー カール
ヴィアト ラルフ
ヴィアト ラルフ
カルテンバッハー アクセル
カルテンバッハー アクセル
ヴァルター　ヴェークライター
ヴェークライター ヴァルター
バーヒマン ベアント
バーヒマン ベアント
ヴッツ オリヴァー
ヴッツ オリヴァー
マーフェルト ヤン
マーフェルト ヤン
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/652—Cross-sectional shapes
    • H10W70/6523—Cross-sectional shapes for connecting to pads at different heights at the same side of the package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/10—Configurations of laterally-adjacent chips

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  • Led Device Packages (AREA)
JP2012527265A 2009-09-03 2010-08-05 半導体ボディとアイソレーション層と平面導体構造とを備えたオプトエレクトロニクス素子および該オプトエレクトロニクス素子の製造方法 Expired - Fee Related JP5675816B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009039890A DE102009039890A1 (de) 2009-09-03 2009-09-03 Optoelektronisches Bauelement mit einem Halbleiterkörper, einer Isolationsschicht und einer planaren Leitstruktur und Verfahren zu dessen Herstellung
DE102009039890.2 2009-09-03
PCT/EP2010/061443 WO2011026709A1 (de) 2009-09-03 2010-08-05 Optoelektronisches bauelement mit einem halbleiterkörper, einer isolationsschicht und einer planaren leitstruktur und verfahren zu dessen herstellung

Publications (3)

Publication Number Publication Date
JP2013504187A JP2013504187A (ja) 2013-02-04
JP2013504187A5 JP2013504187A5 (https=) 2013-05-30
JP5675816B2 true JP5675816B2 (ja) 2015-02-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012527265A Expired - Fee Related JP5675816B2 (ja) 2009-09-03 2010-08-05 半導体ボディとアイソレーション層と平面導体構造とを備えたオプトエレクトロニクス素子および該オプトエレクトロニクス素子の製造方法

Country Status (8)

Country Link
US (1) US20120228663A1 (https=)
EP (1) EP2474048A1 (https=)
JP (1) JP5675816B2 (https=)
KR (1) KR20120055723A (https=)
CN (1) CN102484171B (https=)
DE (1) DE102009039890A1 (https=)
TW (1) TWI451599B (https=)
WO (1) WO2011026709A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130214418A1 (en) * 2012-01-12 2013-08-22 King Dragon International Inc. Semiconductor Device Package with Slanting Structures
US20130181227A1 (en) * 2012-01-12 2013-07-18 King Dragon International Inc. LED Package with Slanting Structure and Method of the Same
US20130181351A1 (en) * 2012-01-12 2013-07-18 King Dragon International Inc. Semiconductor Device Package with Slanting Structures
TWI751809B (zh) 2020-11-18 2022-01-01 隆達電子股份有限公司 增進接合良率的發光二極體結構

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2888385B2 (ja) * 1991-08-22 1999-05-10 京セラ株式会社 受発光素子アレイのフリップチップ接続構造
US6547249B2 (en) * 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
TWI249148B (en) * 2004-04-13 2006-02-11 Epistar Corp Light-emitting device array having binding layer
US6885101B2 (en) * 2002-08-29 2005-04-26 Micron Technology, Inc. Methods for wafer-level packaging of microelectronic devices and microelectronic devices formed by such methods
US6876008B2 (en) * 2003-07-31 2005-04-05 Lumileds Lighting U.S., Llc Mount for semiconductor light emitting device
DE10353679A1 (de) 2003-11-17 2005-06-02 Siemens Ag Kostengünstige, miniaturisierte Aufbau- und Verbindungstechnik für LEDs und andere optoelektronische Module
KR101047683B1 (ko) * 2005-05-17 2011-07-08 엘지이노텍 주식회사 와이어 본딩이 불필요한 발광소자 패키징 방법
TWI331406B (en) * 2005-12-14 2010-10-01 Advanced Optoelectronic Tech Single chip with multi-led
KR100723247B1 (ko) * 2006-01-10 2007-05-29 삼성전기주식회사 칩코팅형 ｌｅｄ 패키지 및 그 제조방법
US7439548B2 (en) * 2006-08-11 2008-10-21 Bridgelux, Inc Surface mountable chip
US20080121911A1 (en) * 2006-11-28 2008-05-29 Cree, Inc. Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9024349B2 (en) * 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
DE102007011123A1 (de) * 2007-03-07 2008-09-11 Osram Opto Semiconductors Gmbh Licht emittierendes Modul und Herstellungsverfahren für ein Licht emittierendes Modul
TWI372478B (en) * 2008-01-08 2012-09-11 Epistar Corp Light-emitting device

Also Published As

Publication number Publication date
EP2474048A1 (de) 2012-07-11
WO2011026709A1 (de) 2011-03-10
JP2013504187A (ja) 2013-02-04
KR20120055723A (ko) 2012-05-31
CN102484171A (zh) 2012-05-30
DE102009039890A1 (de) 2011-03-10
US20120228663A1 (en) 2012-09-13
CN102484171B (zh) 2015-01-14
TWI451599B (zh) 2014-09-01
TW201123540A (en) 2011-07-01

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