TWI451515B - Grain bonding device - Google Patents
Grain bonding device Download PDFInfo
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- TWI451515B TWI451515B TW101120965A TW101120965A TWI451515B TW I451515 B TWI451515 B TW I451515B TW 101120965 A TW101120965 A TW 101120965A TW 101120965 A TW101120965 A TW 101120965A TW I451515 B TWI451515 B TW I451515B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
Description
本發明係關於晶粒接合裝置之構造。The present invention relates to the construction of a die bonding apparatus.
用以將半導體晶片接合於基板等之晶粒接合裝置，係從已切割之晶片拾取半導體晶片並將所拾取之半導體晶片接合於基板或引腳上。此晶粒接合裝置係使吸附半導體晶片並拾取之工具即安裝有筒夾之接合頭相對半導體晶片表面移動於垂直方向。在拾取半導體晶片時或將半導體晶片接合於基板等之上時，由於需將筒夾以某程度之按壓荷重壓抵於半導體晶片，因此例如已提出了一種藉由音圈馬達壓下筒夾以對半導體晶片施加適當之按壓荷重之方法(參照例如專利文獻1)。A die bonding apparatus for bonding a semiconductor wafer to a substrate or the like picks up a semiconductor wafer from the diced wafer and bonds the picked semiconductor wafer to the substrate or the leads. The die bonding apparatus is such that the tool for picking up the semiconductor wafer and picking up, that is, the bonding head on which the collet is mounted, is moved in the vertical direction with respect to the surface of the semiconductor wafer. When picking up a semiconductor wafer or bonding a semiconductor wafer to a substrate or the like, since the collet is required to be pressed against the semiconductor wafer with a certain pressing load, for example, a collet motor is pressed to press the collet by a voice coil motor. A method of applying an appropriate pressing load to a semiconductor wafer (see, for example, Patent Document 1).
然而，由於音圈馬達之重量較大，因此有接合頭難以高速移動且需有用以調整微小按壓荷重之控制裝置而構造變得複雜之問題。因此，乃使用一簡便方法，即於筒夾與接合頭之間安裝能根據接合頭之下降距離調整筒夾對半導體晶片之按壓力之荷重彈簧，藉由控制接合頭之高度來在拾取半導體晶片或將之接合於基板等之上時使適切之按壓荷重施加於半導體晶片。However, since the weight of the voice coil motor is large, there is a problem that the joint head is difficult to move at a high speed and a control device for adjusting the minute pressing load is required to be complicated. Therefore, a simple method is used, that is, a load spring capable of adjusting the pressing force of the collet to the semiconductor wafer according to the falling distance of the bonding head is installed between the collet and the bonding head, and the semiconductor wafer is picked up by controlling the height of the bonding head. Or, when it is bonded to a substrate or the like, a suitable pressing load is applied to the semiconductor wafer.
然而，使用荷重彈簧之方法，由於筒夾、安裝有筒夾之軸、以及荷重彈簧構成所謂彈簧質量系統之振動系統，因此有因晶粒接合裝置之動作速度或按壓荷重之大小等使筒夾及軸大幅上下振動之情形，為了避免在拾取或接合於基板等之 上時筒夾不從半導體晶片表面浮起，需施加較大些許之按壓荷重。However, in the method of using the load spring, since the collet, the shaft to which the collet is attached, and the load spring constitute the vibration system of the so-called spring mass system, the collet is caused by the speed of the die bonding device or the magnitude of the pressing load. And the case where the shaft vibrates up and down sharply, in order to avoid picking up or joining to the substrate, etc. When the upper collet does not float from the surface of the semiconductor wafer, a relatively large pressing load is applied.
[專利文獻1]日本特開2005-340411號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-340411
另一方面，近年來半導體晶片之厚度變得非常薄，其強度亦變弱。又，使用砷化鎵等較脆材料之半導體晶片亦多用。因此，在拾取時或接合於基板等之上時需儘可能減小施加於此種薄或脆之半導體晶片之按壓荷重。然而，使用荷重彈簧之方法，由於係為防止振動導致之浮起，因此有難以減小按壓荷重之問題。進而，在已發生振動時因荷重彈簧之反作用導致瞬間較大按壓荷重施加於半導體晶片，而有致使半導體晶片破損之情形。因此，習知之使用荷重彈簧之晶粒接合裝置，無法施加薄或脆之半導體晶片之拾取所需要之較小按壓荷重，而有難以適切地拾取薄或脆之半導體晶片並接合於基板等之上之問題。On the other hand, in recent years, the thickness of the semiconductor wafer has become very thin, and its strength has also become weak. Further, semiconductor wafers using brittle materials such as gallium arsenide are also widely used. Therefore, it is necessary to minimize the pressing load applied to such a thin or brittle semiconductor wafer at the time of picking up or bonding to a substrate or the like. However, the method of using the load spring is difficult to reduce the pressing load because it is caused by vibration. Further, when the vibration has occurred, a large pressing load is applied to the semiconductor wafer due to the reaction of the load spring, and the semiconductor wafer is damaged. Therefore, the conventional die bonding apparatus using a load spring cannot apply a small pressing load required for picking up a thin or brittle semiconductor wafer, and it is difficult to appropriately pick up a thin or brittle semiconductor wafer and bond it to a substrate or the like. The problem.
本發明之目的在於，在晶粒接合裝置中以簡便之構造適切地拾取薄或脆之半導體晶片並接合。SUMMARY OF THE INVENTION It is an object of the present invention to accurately pick up and bond thin or brittle semiconductor wafers in a die bonding apparatus with a simple structure.
本發明之晶粒接合裝置，其特徵在於，具備：軸，於前端安裝有拾取半導體晶片並接合之接合工具；接合頭，透過複數個平行配置之平板連結件安裝有軸，沿軸之延伸方向直線移動；桿，可旋轉地安裝於接合頭，一端連接於軸，於另一端安裝有配重塊；以及彈簧，安裝於接合頭與桿之另一端 之間，賦予將接合工具壓接於半導體晶片之按壓荷重；配重塊，係使繞桿之旋轉軸之旋轉力矩平衡之重量。A die bonding apparatus according to the present invention includes: a shaft having a bonding tool for picking up a semiconductor wafer and bonding at a tip end thereof; and a bonding head having a shaft mounted through a plurality of parallel-arranged plate connecting members, extending along the axis a linear movement; a rod rotatably mounted to the joint head, one end connected to the shaft, the other end being provided with a weight; and a spring mounted on the other end of the joint head and the rod Between, the pressing load for pressing the bonding tool to the semiconductor wafer is given; the weight is a weight that balances the rotational moment about the rotating shaft of the rod.
本發明之晶粒接合裝置較佳為，桿，藉由使兩片板彈簧交叉成十字型之十字板彈簧可旋轉地安裝於接合頭，桿之旋轉軸係沿兩片板彈簧交叉之線之軸。In the die bonding apparatus of the present invention, preferably, the rod is rotatably mounted to the joint head by crossing the two leaf springs into a cross-shaped cross plate spring, and the rotating shaft of the rod is along the line of the two leaf springs. axis.
本發明之晶粒接合裝置較佳為，各平板連結件，包含沿與軸之延伸方向交叉之面延伸且安裝於接合頭之環狀板及與前述環狀板配置於同一面、橫越位於前述環狀板內側之中空部分之橫越板，於橫越板安裝有軸，各平板連結件之環狀板為大致四角環狀，在對向之兩邊中央之各固定點固定於接合頭，橫越板沿與連結環狀板之各固定點之方向交叉之方向延伸，寬度從連接軸之中央往連接於環狀板之兩端漸小，環狀板，寬度從各固定點往連接於橫越板之兩端漸小。In the die bonding apparatus of the present invention, each of the flat plate connecting members includes an annular plate extending along a surface intersecting the extending direction of the shaft and attached to the bonding head, and is disposed on the same surface as the annular plate, and is located across the board. The traverse plate of the hollow portion inside the annular plate has a shaft attached to the traverse plate, and the annular plate of each plate coupling member has a substantially square annular shape, and the fixing points at the center of the opposite sides are fixed to the joint head. The traverse plate extends in a direction crossing the direction of each fixed point of the connecting annular plate, and the width is gradually reduced from the center of the connecting shaft to the both ends of the annular plate, and the annular plate is connected to each other from the fixed point. The ends of the traversing plate are getting smaller.
本發明，係發揮在晶粒接合裝置中以簡便之構造適切地拾取薄或脆之半導體晶片並接合之效果。The present invention exerts an effect of picking up and bonding a thin or brittle semiconductor wafer in a simple structure in a die bonding apparatus.
以下，參照圖式說明本發明之實施形態。如圖1所示，本實施形態之晶粒接合裝置100，具備安裝於未圖示之往XY方向之移動裝置之線性導件62、沿線性導件62移動於Z方向之滑件61、以及固定於滑件61且與滑件61一起移動於Z方向之接合頭50。接合頭50具備固定於滑件61之本體51、從本體51延伸於Y方向之一對下臂52與一對上 臂53、透過襯套55藉由螺栓54固定於下臂52之下平板連結件20、透過襯套55藉由螺栓54固定於上臂53之上平板連結件30、分別固定於下平板連結件20與上平板連結件30之軸12、以及安裝於軸12下側前端之吸附半導體晶片之接合工具11。下平板連結件20與上平板連結件30平行配置。於軸12之上端安裝有外徑較軸12大之終端塊13，終端塊13之本體51側之下面，構成為抵於以螺栓54固定於上臂53之倒U字型擋止件56之上面。此外，圖1中之Z方向為垂直方向，XY方向顯示彼此正交之水平面。在以下說明之其他圖面中亦相同。Hereinafter, embodiments of the present invention will be described with reference to the drawings. As shown in FIG. 1, the die bonding apparatus 100 of the present embodiment includes a linear guide 62 attached to a moving device in the XY direction (not shown), a slider 61 that moves in the Z direction along the linear guide 62, and The joint head 50 is fixed to the slider 61 and moves together with the slider 61 in the Z direction. The joint head 50 includes a body 51 fixed to the slider 61, and extends from the body 51 in the Y direction to the lower arm 52 and the pair. The arm 53 and the transmission bushing 55 are fixed to the lower arm 52 by the bolts 54 and the plate coupling member 20 and the transmission bushing 55 are fixed to the upper arm 53 by the bolts 54 and are fixed to the lower plate coupling member 20 respectively. The shaft 12 of the upper plate coupling 30 and the bonding tool 11 for attaching the semiconductor wafer to the lower end of the shaft 12 are attached. The lower plate coupling 20 is disposed in parallel with the upper plate coupling 30. A terminal block 13 having an outer diameter smaller than the shaft 12 is attached to the upper end of the shaft 12. The lower surface of the body 51 side of the terminal block 13 is formed to be fixed to the upper U-shaped stopper 56 of the upper arm 53 by bolts 54. . Further, the Z direction in FIG. 1 is a vertical direction, and the XY direction displays horizontal planes orthogonal to each other. The same is true in the other drawings described below.
又，於本體51上部，透過旋轉導件即十字板彈簧45相對接合頭50可旋轉地安裝有桿40。桿40之前端部41(軸12側或Y方向+側)與軸12之終端塊13藉由連結板49連結。又，於桿40之後端部(滑件61側或Y方向-側)藉由螺栓42固定有配重塊48。於配重塊48下側之設於本體51之孔57安裝有賦予將接合工具11按壓於半導體晶片之按壓荷重之彈簧58。彈簧58上端接觸於配重塊48。Further, a rod 40 is rotatably attached to the joint head 50 through a rotating guide, that is, a cross plate spring 45, at an upper portion of the main body 51. The front end portion 41 (shaft 12 side or Y direction + side) of the rod 40 is coupled to the terminal block 13 of the shaft 12 by a connecting plate 49. Further, a weight 48 is fixed to the rear end portion (the slider 61 side or the Y direction side) of the rod 40 by a bolt 42. A spring 58 provided to the body 51 on the lower side of the weight 48 is attached with a spring 58 that imparts a pressing load for pressing the bonding tool 11 against the semiconductor wafer. The upper end of the spring 58 is in contact with the weight 48.
十字板彈簧45係將水平彈簧板46與垂直彈簧板47組合成十字者，水平彈簧板46之後端(滑件61側或Y方向-側)藉由螺栓42固定於接合頭50之本體51前端(軸12側或Y方向+側)藉由螺栓42固定於桿40之中央塊44之下面。又，垂直彈簧板47之下端藉由螺栓42固定於接合頭50之本體51上部，其上端藉由螺栓42固定於桿40之中央塊44之垂直面。如此，十字板彈簧45具有水平彈簧板46之前端與後 端、垂直彈簧板47之上端與下端之四個端部，相鄰之水平彈簧板46之後端與垂直彈簧板47之下端固定於接合頭50之本體51，水平彈簧板46之前端與垂直彈簧板47之上端固定於桿40之中央塊44。接著，水平彈簧板46與垂直彈簧板47交叉之延伸於X方向之線為桿40之旋轉軸40c，十字板彈簧45將桿40支撐成可繞旋轉軸40c旋轉。The cross plate spring 45 combines the horizontal spring plate 46 and the vertical spring plate 47 into a cross, and the rear end of the horizontal spring plate 46 (the slider 61 side or the Y direction side) is fixed to the front end of the body 51 of the joint head 50 by bolts 42. (shaft 12 side or Y direction + side) is fixed to the underside of the central block 44 of the rod 40 by bolts 42. Further, the lower end of the vertical spring plate 47 is fixed to the upper portion of the body 51 of the joint head 50 by bolts 42, and the upper end thereof is fixed to the vertical surface of the central block 44 of the rod 40 by bolts 42. Thus, the cross plate spring 45 has the front end and the rear of the horizontal spring plate 46 The four ends of the upper end and the lower end of the end and the vertical spring plate 47, the rear end of the adjacent horizontal spring plate 46 and the lower end of the vertical spring plate 47 are fixed to the body 51 of the joint head 50, and the front end of the horizontal spring plate 46 and the vertical spring The upper end of the plate 47 is fixed to the central block 44 of the rod 40. Next, the line extending in the X direction by the horizontal spring plate 46 and the vertical spring plate 47 is the rotation shaft 40c of the rod 40, and the cross plate spring 45 supports the rod 40 so as to be rotatable about the rotation shaft 40c.
參照圖2說明上平板連結件30之構造詳細。如圖2所示，上平板連結件30係將薄不鏽鋼或彈簧鋼等加工而成者，沿與軸12延伸之Z方向垂直之XY面內延伸。上平板連結件30具備環狀板31與於Y方向橫越環狀板31內側之中空部分34之橫越板32。環狀板31與橫越板32配置於同一平面內。環狀板31為大致四角環狀，各邊延伸於X方向與Y方向。又，延伸於Y方向之一對第1邊31a之長度方向中央透過襯套55藉由螺栓54固定於上臂53上面。藉由此螺栓54固定於上臂53之第1邊31a之部分分別為上平板連結件30之固定點33。又，環狀板31之延伸於X方向之一對第2邊31b之各中央藉由橫越板32於Y方向連接。又，於橫越板32中央固定有軸12。如圖2所示，橫越板32之中心線72為通過軸12之中心線71之線。軸12安裝於橫越板32之部分藉由環14補強。如圖2所示，橫越板32通過軸12之中心線71延伸於Y方向，固定有軸12之中央部分寬度較寬，為其寬度朝往與環狀板31連接之端部而漸小之錐形狀。又，延伸於Y方向之一對第1邊31a藉由螺栓54固定之固定點33之部分寬度較寬，隨著往Y方向，第2邊31b之寬度漸小。 又，兩個固定點33與軸12配置於一個直線73上，於X方向排列成一列。以上，雖說明了上平板連結件30之構造，但下平板連結件20之構造亦與上平板連結件30為相同構造。The configuration of the upper plate coupling 30 will be described in detail with reference to FIG. As shown in FIG. 2, the upper plate coupling 30 is formed by processing a thin stainless steel or a spring steel or the like, and extends in an XY plane perpendicular to the Z direction in which the shaft 12 extends. The upper plate coupling 30 includes an annular plate 31 and a traverse plate 32 that traverses the hollow portion 34 inside the annular plate 31 in the Y direction. The annular plate 31 and the traverse plate 32 are disposed in the same plane. The annular plate 31 has a substantially square annular shape, and each side extends in the X direction and the Y direction. Further, the center of the first side 31a extending in the Y direction is fixed to the upper surface of the upper arm 53 by a bolt 54 through the center through the bushing 55. The portion of the upper side 53a fixed to the upper arm 53 by the bolt 54 is a fixed point 33 of the upper plate coupling 30, respectively. Further, one of the extensions of the annular plate 31 in the X direction and the center of the second side 31b are connected in the Y direction by the traverse plate 32. Further, a shaft 12 is fixed to the center of the traverse plate 32. As shown in FIG. 2, the centerline 72 of the traverse plate 32 is the line that passes through the centerline 71 of the shaft 12. The portion of the shaft 12 that is mounted to the traverse plate 32 is reinforced by the ring 14. As shown in Fig. 2, the traverse plate 32 extends in the Y direction through the center line 71 of the shaft 12, and the central portion of the shaft 12 is fixed to have a wide width, and the width thereof is gradually decreased toward the end portion connected to the annular plate 31. The shape of the cone. Further, a portion of the fixing point 33 which is extended by one of the Y-directions to the first side 31a by the bolt 54 is wide, and the width of the second side 31b becomes smaller as it goes in the Y direction. Further, the two fixed points 33 and the shaft 12 are arranged on a straight line 73 and arranged in a line in the X direction. Although the structure of the upper plate coupling 30 has been described above, the structure of the lower plate coupling 20 is also the same as that of the upper plate coupling 30.
說明藉由如以上說明構成之本實施形態之晶粒接合裝置100拾取半導體晶片時之動作。對已參照圖1,2說明之部分賦予相同之符號，其說明省略。The operation when the semiconductor wafer is picked up by the die bonding apparatus 100 of the present embodiment configured as described above will be described. The same reference numerals are given to the portions already described with reference to Figs. 1 and 2, and the description thereof will be omitted.
如圖3所示，欲拾取之半導體晶片90，在於背面貼附有切割帶83之狀態下被吸附固定於拾取載台81上。切割帶83在往周圍拉伸之狀態下於各半導體晶片90之間形成微小之間隙。晶粒接合裝置100藉由未圖示之XY移動裝置使接合頭50移動，使安裝於軸12之下端之接合工具11之位置來到欲拾取之半導體晶片90正上方。As shown in FIG. 3, the semiconductor wafer 90 to be picked up is adsorbed and fixed to the pickup stage 81 in a state where the dicing tape 83 is attached to the back surface. The dicing tape 83 forms a minute gap between the semiconductor wafers 90 in a state of being stretched to the periphery. The die bonding apparatus 100 moves the bonding head 50 by an XY moving device (not shown) so that the position of the bonding tool 11 attached to the lower end of the shaft 12 comes directly above the semiconductor wafer 90 to be picked up.
其次，如圖4所示，晶粒接合裝置100藉由未圖示之控制部之指令，使安裝有接合頭50之滑件61往Z方向下方降下。接著，控制部在接合工具11前端接觸於半導體晶片90表面後，進而使滑件61及接合頭50降下高度△Z0 。如此，如圖4所示，軸12被導引至兩個平板連結件20,30而相對接合頭50往上方移動高度△Z0 ，軸12上端之終端塊13亦往上方移動高度△Z0 。接著，藉由連結板49連結於終端塊13之桿40之前端部41亦往上方移動高度△Z0 。桿40沿十字板彈簧45之水平彈簧板46與垂直彈簧板47之交叉旋轉軸40c繞X軸旋轉，桿40之後端部43往下方移動高度△Z5 。如此，彈簧58於Z方向縮小長度△Z5 ，藉由其反作用力將桿40之後端部43往上壓，對透過連結板49連接於桿40之前端部 41之終端塊13、軸12往下施加力Fo。接合工具11之內部由於藉由未圖示之真空裝置而成為真空，因此藉由此力Fo，接合工具11被按壓於半導體晶片90表面後，接合工具11即吸附半導體晶片90。其後，藉由未圖示之控制部使滑件61上升後，接合工具11即拾取半導體晶片90。Next, as shown in FIG. 4, the die bonding apparatus 100 lowers the slider 61 to which the bonding head 50 is attached in the Z direction downward by a command from a control unit (not shown). Next, after the front end of the bonding tool 11 comes into contact with the surface of the semiconductor wafer 90, the control unit lowers the slider 61 and the bonding head 50 by the height ΔZ 0 . Thus, as shown in FIG. 4, the shaft 12 is guided to the two plate joints 20, 30 and moved upward by a height ΔZ 0 with respect to the joint head 50, and the terminal block 13 at the upper end of the shaft 12 is also moved upward by a height ΔZ 0 . Next, the end portion 41 of the rod 40 connected to the terminal block 13 by the connecting plate 49 is also moved upward by a height ΔZ 0 . The rod 40 is rotated about the X-axis along the intersecting rotation shaft 40c of the horizontal spring plate 46 of the cross-plate spring 45 and the vertical spring plate 47, and the end portion 43 of the rod 40 is moved downward by a height ΔZ 5 . Thus, the spring 58 is reduced in length in the Z direction by ΔZ 5 , and the rear end portion 43 of the rod 40 is pressed upward by the reaction force thereof, and the terminal block 13 and the shaft 12 which are connected to the front end portion 41 of the rod 40 through the coupling plate 49 are The force Fo is applied downward. Since the inside of the bonding tool 11 is vacuumed by a vacuum device (not shown), the bonding tool 11 is pressed against the surface of the semiconductor wafer 90 by the force Fo, and the bonding tool 11 adsorbs the semiconductor wafer 90. Thereafter, the slider 61 is raised by a control unit (not shown), and the bonding tool 11 picks up the semiconductor wafer 90.
參照圖5、圖6，詳細說明接合工具11接觸半導體晶片90表面後接合頭50進一步降下高度△Z0 時之上平板連結件30之變形與軸12之移動。接合工具11接觸半導體晶片90表面後，接合頭50進一步降下高度△Z0 時，由於如圖5所示，固定有上平板連結件30之上臂53亦較接合工具11接觸半導體晶片90表面時之高度降下高度△Z0 ，因此上平板連結件30之固定點33亦較接合工具11接觸半導體晶片90表面時之高度降下高度△Z0 。另一方面，由於軸12之前端之接合工具11接觸於半導體晶片90表面，因此不會再更加降下，而於上平板連結件30之固定有軸12之橫越板32中央與兩個固定點33間形成△Z0 之高度差。藉由上平板連結件30之固定點33而中央固定於上臂53之各第1邊31a，如圖5及圖6(a)所示，從固定點33往第2邊31b逐漸往上方彎曲。又，如圖5、圖6(b)所示，橫越第2邊31b之間之橫越板32，係往上方變形成安裝有軸12之中央部從第2邊31b隆起。進而，如圖5、圖6(b)所示，第2邊31b之連接有橫越板32之中央部分往上變形成從連接於第1邊31a之兩端隆起。如圖6(a)所示，藉由第1邊31a往上方之彎曲，於固定點33與第1邊31a之兩端或第2邊31b之間形成△Z1 之高度差。又， 如圖6(b)所示，藉由第2邊31b之隆起變形，於第1邊31a之兩端與第2邊31b之中央部之間形成△Z2 之高度差。進而，如圖6(b)所示，藉由橫越板32之隆起變形，於第2邊31b之中央與安裝有軸12之橫越板32之中央之間形成△Z3 之高度差。又，此高度之差△Z1 ,△Z2 ,△Z3 之合計為高度△Z0 。亦即，△Z1 +△Z2 +△Z3 =△Z0 。Referring to FIGS. 5 and 6, the deformation of the upper plate coupling 30 and the movement of the shaft 12 when the bonding head 50 is further lowered by the height ΔZ 0 after the bonding tool 11 contacts the surface of the semiconductor wafer 90 will be described in detail. After the bonding tool 11 contacts the surface of the semiconductor wafer 90, when the bonding head 50 is further lowered by the height ΔZ 0 , since the upper arm 53 is fixed to the upper surface of the semiconductor wafer 90 when the bonding tool 11 is fixed as shown in FIG. The height is lowered by the height ΔZ 0 , so that the fixed point 33 of the upper plate coupling 30 is also lower than the height ΔZ 0 when the bonding tool 11 contacts the surface of the semiconductor wafer 90. On the other hand, since the bonding tool 11 at the front end of the shaft 12 is in contact with the surface of the semiconductor wafer 90, it is not lowered any more, and the center plate of the upper plate connecting member 30 is fixed with the shaft 12 across the center of the plate 32 and two fixed points. 33 sets the height difference of ΔZ 0 . The first side 31a of the upper arm 53 is centrally fixed by the fixing point 33 of the upper plate coupling 30, and is bent upward from the fixed point 33 toward the second side 31b as shown in Figs. 5 and 6(a). Further, as shown in FIG. 5 and FIG. 6(b), the traverse plate 32 between the second sides 31b is formed such that the central portion to which the shaft 12 is attached is raised from the second side 31b. Further, as shown in Fig. 5 and Fig. 6(b), the central portion of the second side 31b to which the traverse plate 32 is connected is formed to be swelled from both ends connected to the first side 31a. As shown in Fig. 6(a), the height difference of ΔZ 1 is formed between the fixed point 33 and the both ends of the first side 31a or the second side 31b by the upward bending of the first side 31a. Further, as shown in Fig. 6(b), the height difference of ΔZ 2 is formed between the both ends of the first side 31a and the central portion of the second side 31b by the bulging deformation of the second side 31b. Further, as shown in Fig. 6(b), by the bulging deformation of the traverse plate 32, a height difference of ΔZ 3 is formed between the center of the second side 31b and the center of the traverse plate 32 to which the shaft 12 is attached. Further, the difference between the heights ΔZ 1 , ΔZ 2 , and ΔZ 3 is the height ΔZ 0 . That is, ΔZ 1 + ΔZ 2 + ΔZ 3 = ΔZ 0 .
如上述，上平板連結件30藉由從固定點33延伸之第1邊31a之彎曲變形、第2邊31b之隆起變形、橫越於與第2邊31b之間之橫越板32之隆起變形，使軸12相對接合頭50於Z方向移動高度△Z0 。又，由於第1邊31a與橫越板32之連接於第2邊31b之端部之寬度漸小，因此於第2邊31b之兩端及橫越板32之兩端分別形成連結，藉由各連結之旋轉使軸12移動於Z方向。因此，幾乎不會發生對軸12之Z方向之移動之抵抗。又，本實施形態之晶粒接合裝置100由於係將下平板連結件20與上平板連結件30之兩個平板連結件平行配置，藉此軸12支撐成能移動於Z方向，因此能使軸12相對半導體晶片90表面於垂直方向順暢地移動。進而，如圖4所示，由於桿40藉由十字板彈簧45繞旋轉軸40c被旋轉支撐，因此無如旋轉軸承等摩擦抵抗，幾乎不會發生對旋轉之抵抗。As described above, the upper plate coupling 30 is deformed by the first side 31a extending from the fixed point 33, the second side 31b, and the traverse between the second side 31b and the second side 31b. The shaft 12 is moved relative to the joint head 50 by a height ΔZ 0 in the Z direction. Further, since the width of the end portion of the first side 31a and the traverse plate 32 connected to the second side 31b is gradually reduced, the two ends of the second side 31b and the both ends of the traverse plate 32 are respectively connected. The rotation of each link moves the shaft 12 in the Z direction. Therefore, resistance to the movement of the shaft 12 in the Z direction hardly occurs. Further, in the die bonding apparatus 100 of the present embodiment, since the lower plate coupling 20 and the two plate couplings of the upper plate coupling 30 are arranged in parallel, the shaft 12 is supported so as to be movable in the Z direction, thereby enabling the shaft. The surface of the semiconductor wafer 90 is smoothly moved in the vertical direction. Further, as shown in FIG. 4, since the rod 40 is rotatably supported around the rotating shaft 40c by the cross-plate spring 45, there is no frictional resistance such as a rotary bearing, and resistance to rotation hardly occurs.
因此，在接合工具11接觸半導體晶片90表面後，接合頭50沉入高度△Z時施加於半導體晶片90表面之力，如圖7所示係相對沉入高度△Z成正比。亦即，F=K×△Z。接著，沉入量成為高度△Z0 後，對半導體晶片90施加F0 =K×△Z0 之按壓荷重。接著，如先前說明，藉由此力Fo，接合工具11被按壓於半導體晶片90表面後，接合工具11即吸附半導體晶片90。其後，藉由未圖示之控制部使滑件61上升後，接合工具11即拾取半導體晶片90。Therefore, after the bonding tool 11 contacts the surface of the semiconductor wafer 90, the force applied to the surface of the semiconductor wafer 90 when the bonding head 50 sinks into the height ΔZ is proportional to the sinking height ΔZ as shown in FIG. That is, F = K × ΔZ. Subsequently, the amount of a highly sink △ Z 0, is applied to F 0 = K × △ Z 0 of the load pressing the semiconductor wafer 90. Next, as described above, by the force Fo, the bonding tool 11 is pressed against the surface of the semiconductor wafer 90, and the bonding tool 11 adsorbs the semiconductor wafer 90. Thereafter, the slider 61 is raised by a control unit (not shown), and the bonding tool 11 picks up the semiconductor wafer 90.
以上，說明了本實施形態之晶粒接合裝置100之基本動作，其次說明使接合頭50降下至接合工具11前端接觸於半導體晶片90上之動作與此時發生之慣性力。The basic operation of the die bonding apparatus 100 of the present embodiment has been described above, and the operation of lowering the bonding head 50 to the tip end of the bonding tool 11 in contact with the semiconductor wafer 90 and the inertial force occurring at this time will be described.
如圖3所示，使接合工具11來到拾取之半導體晶片90正上方後，未圖示之控制部即驅動滑件61使接合頭50往半導體晶片90開始降下。As shown in FIG. 3, after the bonding tool 11 comes directly over the semiconductor wafer 90 to be picked up, the driving slider 61, which is a control unit (not shown), starts the bonding of the bonding head 50 to the semiconductor wafer 90.
於圖8所示之時間t20 ，接合頭50開始降下後，接合頭50之降下速度v從零開始逐漸加速。接著，從圖8所示之時間t21 至時間t22 之期間中加速度(正加速度)為一定而接合頭50之降下速度v直線逐漸增加。接著，從圖8所示之時間t22 至時間t23 之期間中加速度成為負，接合頭50之降下速度之上升率逐漸降低，接合頭50之降下速度v逐漸接近一定之降下速度v1 。其後，從圖8所示之時間t23 至t24 之期間中，接合頭50以一定之降下速度v1 逐漸降下。在接合頭50降下之期間，控制部藉由未圖示之高度檢測器檢測出接合頭50之高度，從其檢測結果計算接合工具11之前端與半導體晶片90表面之距離。At the time shown in FIG. 8 t 20, the bonding head 50 to start lowering the engagement head 50 of the lowering speed V gradually accelerated from scratch. Next, the acceleration (positive acceleration) is constant from the time t 21 to the time t 22 shown in FIG. 8 and the descending speed v of the bonding head 50 is gradually increased. Next, the acceleration becomes negative from the time t 22 to the time t 23 shown in FIG. 8, and the rate of increase of the lowering speed of the bonding head 50 gradually decreases, and the lowering speed v of the bonding head 50 gradually approaches a certain lowering speed v 1 . Thereafter, from the time t 23 to t 24 shown in Fig. 8, the bonding head 50 is gradually lowered at a certain lowering speed v 1 . While the bonding head 50 is lowered, the control unit detects the height of the bonding head 50 by a height detector (not shown), and calculates the distance between the front end of the bonding tool 11 and the surface of the semiconductor wafer 90 from the detection result.
接著，在接合工具11之前端與半導體晶片90表面之距離縮至既定距離後，如圖8之時間t24 所示，使接合頭50之降下速度v從一定之降下速度v1 逐漸減小。從圖8所示 之期間中加速度成為負，接合頭50之降下速度v與時間一起逐漸變小。從圖8所示之時間t25 至t26 之期間中加速度(負加速度)為一定，接合頭50之降下速度v直線逐漸減少。接著，從圖8所示之時間t26 至時間t27 之期間中加速度成為正，接合頭50之降下速度之減少率逐漸變小，於圖8所示之時間t27 ，成為用以接地於半導體晶片90表面之一定之微小降下速度v0 。控制部使接合頭50以一定之微小降下速度v0 緩慢降下。Subsequently, the surface of the bonding tool 90 from the distal end of the semiconductor wafer 11 to a predetermined distance after the reduction, the time t 24 shown in FIG. 8 of the engaging head 50 of the lowering speed v v 1 gradually decreases from the constant speed down. The acceleration becomes negative from the period shown in Fig. 8, and the lowering speed v of the bonding head 50 gradually becomes smaller together with time. The acceleration (negative acceleration) is constant from the time t 25 to t 26 shown in Fig. 8, and the descending speed v of the joint head 50 is gradually decreased. Then, the acceleration becomes positive during the period from time t 26 to time t 27 shown in FIG. 8, and the rate of decrease of the lowering speed of the bonding head 50 gradually becomes smaller, and is used to ground to the time t 27 shown in FIG. A certain slight decrease in velocity v 0 of the surface of the semiconductor wafer 90. The control unit causes the joint head 50 to slowly descend at a certain minute lowering speed v 0 .
當於圖8所示之時間t1 ，接合工具11之前端接觸於半導體晶片90表面後，如圖4所示，接合工具11與軸12被往上壓而桿40繞旋轉軸40c旋轉而將彈簧58下壓。接著，在接合頭50進一步被下壓後，藉由彈簧58之反作用力，接合工具11之前端藉由按壓荷重F而被壓抵於半導體晶片90表面。如圖8所示，按壓荷重F係從接合工具11之前端接觸於半導體晶片90表面之時間t1 起隨著接合頭50降下而逐漸增加。When the time is shown in FIG. 8 t 1, the front end of the bonding tool 11 in contact with the surface of the semiconductor wafer 90, 40 rotating about a rotational axis 40c in FIG. 4, the bonding tool 11 and the shaft 12 is pressed upward and the lever The spring 58 is pressed down. Then, after the bonding head 50 is further pressed down, the front end of the bonding tool 11 is pressed against the surface of the semiconductor wafer 90 by pressing the load F by the reaction force of the spring 58. 8, the pressing load F from the line 11 of the front end of the bonding tool 90 in contact with the surface at time t 1 from the semiconductor wafer with the bonding head 50 is lowered gradually increases.
如以上所說明，在接合頭50降下中，其降下速度會變化，此時於接合頭50施加上方向或下方向之加速度。會因此時施加於安裝於接合頭50之軸12、接合工具11、桿40、配重塊48之加速度，產生往上方向或下方向之慣性力作用。如圖8之時間t20 至t21 ，在接合頭50之降下速度v增加之期間，於接合頭50施加往下之加速度。如此，以能相對接合頭50於Z方向移動之方式，藉由各平板連結件20,30對安裝於接合頭50之各臂52,53之軸12、終端塊13及安裝於 軸12之前端之接合工具11施加與施加於接合頭50之加速度大小相同且相反方向之加速度α，藉由此加速度α，如圖3所示，施加對固定於滑件61之接合頭50為往上之慣性力G1 (圖3中以白色箭頭82顯示)。As explained above, in the lowering of the joint head 50, the lowering speed thereof changes, and at this time, the acceleration in the upper or lower direction is applied to the joint head 50. Therefore, the acceleration applied to the shaft 12, the bonding tool 11, the rod 40, and the weight 48 attached to the bonding head 50 is generated to generate an inertial force in the upward or downward direction. At time t 20 to t 21 of FIG. 8, during the period in which the lowering speed v of the bonding head 50 is increased, the downward acceleration is applied to the bonding head 50. Thus, the shaft 12, the terminal block 13 attached to the arms 52, 53 of the joint head 50, and the terminal block 13 are attached to the front end of the shaft 12 by means of the respective flat joints 20, 30 so as to be movable relative to the joint head 50 in the Z direction. The bonding tool 11 applies an acceleration α of the same magnitude and opposite direction to the acceleration applied to the bonding head 50, whereby the acceleration α, as shown in FIG. 3, applies an inertia to the bonding head 50 fixed to the slider 61. Force G 1 (shown by white arrow 82 in Figure 3).
此處，若將與施加於接合頭50之加速度相同且方向相反之加速度設為α，將軸12、終端塊13及安裝於軸12之前端之接合工具11之合計質量設為m1 ，則為G1 =m1 ×α。接著，藉由慣性力G1 ，對藉由連結板49而連接有軸12之桿40之前端部41施加繞旋轉軸40c且往順時針方向之旋轉力矩M1 。此處，若將桿40之旋轉軸40c與軸12之中心之距離設為力矩臂L1 ，則為M1 =G1 ×L1 。又，如圖3所示，對安裝於桿40之後端部43之配重塊48亦施加若將配重塊48質量設為m2 則為G2 =m2 ×α之對接合頭50為往上之慣性力G2 (圖3中以白色箭頭84顯示)。接著，藉由此慣性力G2 ，對安裝有配重塊48之桿40之後端部43施加繞旋轉軸40c且往逆時針方向之旋轉力矩M2 。此處，若將桿40之旋轉軸40c與配重塊48之中心之距離設為力矩臂L2 ，則為M2 =G2 ×L2 。Here, when the acceleration which is the same as the acceleration applied to the bonding head 50 and the opposite direction is α, and the total mass of the bonding tool 11 of the shaft 12, the terminal block 13 and the front end of the shaft 12 is m 1 , It is G 1 =m 1 ×α. Next, the inertial force G 1 is applied to the front end portion 41 of the rod 40 to which the shaft 12 is coupled by the coupling plate 49, and a rotational moment M 1 is applied around the rotating shaft 40c in the clockwise direction. Here, when the distance between the rotating shaft 40c of the rod 40 and the center of the shaft 12 is the moment arm L 1 , M 1 = G 1 × L 1 . Further, 3, 43 with the weight of the end portion 40 is attached to the rod 48 after also be applied if the mass of the counterweight 48 m 2 compared to G 2 = m 2 × α of the bonding head 50 is Upward inertial force G 2 (shown by white arrow 84 in Figure 3). Then, by the inertial force G 2 , the end portion 43 of the rod 40 to which the weight 48 is attached is applied with a rotational moment M 2 about the rotational axis 40c and counterclockwise. Here, when the distance between the rotating shaft 40c of the rod 40 and the center of the weight 48 is the moment arm L 2 , M 2 = G 2 × L 2 .
施加於軸12、終端塊13、接合工具11之加速度與施加於配重塊48之加速度，由於均為與施加於接合頭50之加速度相同大小且方向相反之加速度α，因此軸12、終端塊13、接合工具11之合計質量m1 與配重塊48之質量m2 分別相等，在各力矩臂L1 ,L2 分別相等之情形且繞桿40之旋轉軸40c之旋轉力矩於周方向平衡之情形，各旋轉力矩M1 ,M2 其方向相反且大小相等。又，在繞桿40之旋轉軸40c之旋轉力矩於周方向不平衡之情形，藉由調整配重塊48之重量以消除該不平衡，而能使旋轉力矩M1 ,M2 其方向相反且大小相等。The acceleration applied to the shaft 12, the terminal block 13, the bonding tool 11, and the acceleration applied to the weight 48 are both the same magnitude and opposite acceleration α as the acceleration applied to the bonding head 50, so the shaft 12 and the terminal block 13. The total mass m 1 of the bonding tool 11 and the mass m 2 of the weight 48 are respectively equal, and the respective rotational moments L 1 and L 2 are equal, and the rotational moment about the rotating shaft 40c of the rod 40 is balanced in the circumferential direction. In the case, the respective rotational moments M 1 , M 2 are opposite in direction and equal in magnitude. Further, in the case where the rotational moment about the rotational axis 40c of the rod 40 is unbalanced in the circumferential direction, by adjusting the weight of the weight 48 to eliminate the imbalance, the rotational moments M 1 , M 2 can be reversed and Equal in size.
如先前所說明，由於各旋轉力矩M1 ,M2 之大小與施加於接合頭50之加速度相同且與相反方向之加速度α成正比，因此在如圖8所示之時間t20 至t21 般加速度α增大之情形下，隨此分別於圖8以一點鍊線所示之旋轉力矩M1 亦增大，在如時間t21 至t22 般加速度α為一定之情形，旋轉力矩M1 為一定，在如時間t22 至t23 般加速度α逐漸減少之情形，旋轉力矩M1 則減少。又，在如時間t23 至t24 般速度不變化而加速度α為零之情形，旋轉力矩M1 成為零。As explained earlier, since the magnitudes of the respective rotational moments M 1 , M 2 are the same as the acceleration applied to the joint head 50 and proportional to the acceleration α in the opposite direction, they are at times t 20 to t 21 as shown in FIG. In the case where the acceleration α is increased, the rotational moment M 1 indicated by the one-point chain line in Fig. 8 is also increased, and the acceleration moment M is constant when the acceleration α is constant as time t 21 to t 22 , and the rotational moment M 1 is Certainly, in the case where the acceleration α is gradually decreased as time t 22 to t 23 , the rotational moment M 1 is decreased. Further, in the case where the speed does not change as the time t 23 to t 24 and the acceleration α is zero, the rotational moment M 1 becomes zero.
如圖8所示之時間t24 至t25 般，接合頭50之降下速度從一定速度v1 減少之情形，由於加速度α從零減少因此成為負，旋轉力矩M1 亦從時間t24 之零減少而成為負。接著，如時間t25 至t26 般加速度α為一定之情形，旋轉力矩M1 為一定，在如時間t26 至t27 般接合頭50之降下速度之減少程度降低時，加速度α即增加，旋轉力矩M1 從負往零逐漸增加。接著，如時間t27 至t28 般速度不變化而加速度α為零之情形，旋轉力矩M1 成為零。以上雖說明了旋轉力矩M1 之變化，但由於如圖8以虛線所示，旋轉力矩M2 之大小與旋轉力矩M1 相同且方向相反，因此圖8中，係相對零之橫軸與旋轉力矩M1 上下對向地變化。As in the time t 24 to t 25 shown in Fig. 8, the lowering speed of the engaging head 50 is decreased from the constant speed v 1 , and since the acceleration α is decreased from zero, it becomes negative, and the rotational moment M 1 is also zero from the time t 24 . Reduce and become negative. Then, if the acceleration α is constant as time t 25 to t 26 , the rotational moment M 1 is constant, and the acceleration α increases as the degree of decrease in the descending speed of the joint head 50 decreases as time t 26 to t 27 . The rotational moment M 1 gradually increases from negative to zero. Next, as the time t 27 to t 28 does not change and the acceleration α is zero, the rotational moment M 1 becomes zero. Although the above variation of the apparent rotation moment M 1, but shown in Figure 8, the rotational moment M 2 of the size of the rotation moment M 1 in broken lines the same and opposite directions, thus in FIG. 8, the horizontal axis of rotation relative to the zero line of The moment M 1 changes up and down in opposite directions.
如上述，雖各旋轉力矩M1 ,M2 依施加於接合頭50之加 速度α之大小、方向而變化，但如先前所說明，本實施形態中，由於配重塊48之重量調整成各旋轉力矩M1 ,M2 之方向相反且大小相同，因此在圖8所示之各時間中，各旋轉力矩M1 ,M2 取得平衡。藉此，即使軸12、配重塊48等與彈簧58構成彈簧質量振動系統，亦可抑制在接合頭50降下時軸12上下振動。As described above, although the respective rotational moments M 1 and M 2 vary depending on the magnitude and direction of the acceleration α applied to the joint head 50, as described above, in the present embodiment, the weight of the weight 48 is adjusted to each rotation. The moments M 1 and M 2 are opposite in direction and the same magnitude, so that the respective moments of rotation M 1 , M 2 are balanced in each time shown in FIG. Thereby, even if the shaft 12, the weight 48, and the like and the spring 58 constitute a spring mass vibration system, it is possible to suppress the shaft 12 from vibrating up and down when the joint head 50 is lowered.
在於圖8所示時間t1 時接合工具11之前端接觸於半導體晶片90表面後，如先前所說明，彈簧58係被壓縮，如圖8、圖9所示時間t1 以後般與接合頭50之沉入量△Z成正比之按壓荷重F施加於半導體晶片90表面。接著，桿40之繞旋轉軸40c之各旋轉力矩M1 ,M2 之平衡被破壞，如圖9所示，藉由以軸12、配重塊48等與彈簧58構成之彈簧質量振動系統，軸12於上下方向振動。接著，如於圖9以實線所示，於時間t2 時半導體晶片90之按壓荷重成為最大按壓荷重F1 ，其後於時間t3 時雖成為最小按壓荷重F2 ，但其振動隨時間經過而減弱，於圖9所示時間t4 時成為大致規定之按壓荷重F0 。接著，從時間t4 至時間t5 之期間，對半導體晶片90施加既定之按壓荷重F0 而拾取半導體晶片90，在接合頭50上升後，於圖9之時間t6 時半導體晶片90之按壓荷重成為零。As shown in FIG 8 wherein the time T after engaging the front end 11 of the tool 90 in contact with the surface of the semiconductor wafer 1, as previously described, the spring 58 is compressed lines in FIG. 8, the time shown in FIG. 9 t 1 after the engagement head 50 and the like The sinking amount ΔZ is applied to the surface of the semiconductor wafer 90 in proportion to the pressing load F. Then, the balance of the respective rotational moments M 1 , M 2 of the rod 40 about the rotating shaft 40c is broken, and as shown in FIG. 9, the spring mass vibration system composed of the shaft 12, the weight 48, and the like and the spring 58 is used. The shaft 12 vibrates in the up and down direction. Next, as shown in solid line shown in FIG. 9, at time t 2 of the semiconductor wafer 90 presses the pressing load becomes the maximum load F 1, followed at time t 3 when the pressing load becomes minimum, although F 2, but with time the vibration When it is weakened, it becomes a predetermined pressing load F 0 at time t 4 shown in FIG. 9 . Then, 4 to time t 5, the application of a predetermined of the pressing load F 0 to the semiconductor wafer 90 at time t from the pickup of the semiconductor wafer 90, after the engagement head 50 rises at time 9 of 6 of the semiconductor wafer is pressed t 90 of The load becomes zero.
本實施形態中，由於藉由配重塊48，使接合頭50降下時之各旋轉力矩M1 ,M2 取得平衡，因此與未設有圖9之虛線所示之配重塊48之情形相較，在接合工具11前端接觸於半導體晶片90表面後，能使施加於半導體晶片90之最大按 壓荷重F1 與最小按壓荷重F2 之差較無配重塊48時之最大按壓荷重F11 與最小按壓荷重F12 之差更小，且能使最大按壓荷重F1 之大小較最大按壓荷重F11 小，使最小按壓荷重F2 為零以上。因此，如圖9所示，即使將按壓荷重之設定值F0 設為較無配重塊48時之設定值F10 小，接合工具11亦不會從半導體晶片90浮起，而不會對半導體晶片90施加過度之按壓荷重使半導體晶片90破損。藉此，以較小之按壓荷重為設定值，能將薄或脆之半導體晶片90不損傷地適切地拾取。In the present embodiment, since the respective rotational moments M 1 and M 2 when the joint head 50 is lowered by the weight 48 are balanced, the balance weight 48 shown by the broken line in Fig. 9 is not provided. When the front end of the bonding tool 11 is in contact with the surface of the semiconductor wafer 90, the difference between the maximum pressing load F 1 and the minimum pressing load F 2 applied to the semiconductor wafer 90 can be made smaller than the maximum pressing load F 11 and the minimum when the weight 48 is not provided. The difference between the pressing loads F 12 is smaller, and the magnitude of the maximum pressing load F 1 can be made smaller than the maximum pressing load F 11 so that the minimum pressing load F 2 is zero or more. Therefore, as shown in FIG. 9, even if the set value F 0 of the pressing load is set to be smaller than the set value F 10 when the weight is not provided, the bonding tool 11 does not float from the semiconductor wafer 90, and the semiconductor is not used. The wafer 90 exerts an excessive pressing load to break the semiconductor wafer 90. Thereby, the thin or brittle semiconductor wafer 90 can be appropriately picked up without damage with a small pressing load as a set value.
又，本實施形態中，由於係將軸12以兩個平板連結件20,30支撐，藉由十字板彈簧45將桿40支撐成旋轉自如，而無如習知技術之滑動部分，因此亦不會產生因滑動部分之拉掛等而產生於圖9之時間t13 之按壓荷重之峰，能穩定地施加較小之按壓荷重。再者，本實施形態，由於能使軸12、接合工具11、終端塊13等之重量較輕，因此能將圖9之虛線所示之習知技術之晶粒接合裝置拾取半導體晶片90所必須之時間(t17 -t1 )縮短至時間(t6 -t1 )，能縮短半導體晶片90之拾取時間。Further, in the present embodiment, since the shaft 12 is supported by the two flat plate coupling members 20, 30, the rod 40 is rotatably supported by the cross-plate spring 45, and there is no sliding portion as in the prior art, and therefore A peak of the pressing load generated at time t 13 of Fig. 9 due to the pulling of the sliding portion or the like is generated, and a small pressing load can be stably applied. Further, in the present embodiment, since the weight of the shaft 12, the bonding tool 11, the terminal block 13, and the like can be made light, it is necessary to pick up the semiconductor wafer 90 by the conventional die bonding apparatus shown by the broken line in Fig. 9 . The time (t 17 - t 1 ) is shortened to time (t 6 - t 1 ), and the pickup time of the semiconductor wafer 90 can be shortened.
如以上所說明，本實施形態，能在晶粒接合裝置中，以簡便之構造適切地將薄或脆之半導體晶片不破損地適切地拾取。As described above, in the present embodiment, it is possible to appropriately pick up a thin or brittle semiconductor wafer in a die bonding apparatus with a simple structure without being damaged.
以上，雖說明了藉由本實施形態之晶粒接合裝置100拾取半導體晶片90時之動作，但將半導體晶片90接合於基板或導線架等上時之動作亦相同，由於能正確地控制施加於半 導體晶片90之小按壓力，因此能將薄且強度低或較脆之半導體晶片90不損傷地適切地接合於基板或導線架等之上。又，進一步將半導體晶片接合於半導體晶片上時亦同樣地，能使半導體晶片90不損傷地適切地進行接合。Although the operation of picking up the semiconductor wafer 90 by the die bonding apparatus 100 of the present embodiment has been described above, the operation of bonding the semiconductor wafer 90 to the substrate or the lead frame is also the same, and the control can be applied to the half correctly. The small pressing force of the conductor wafer 90 enables the thin, low-strength or brittle semiconductor wafer 90 to be properly bonded to the substrate, lead frame or the like without damage. Further, similarly, when the semiconductor wafer is bonded to the semiconductor wafer, the semiconductor wafer 90 can be joined without being damaged.
11‧‧‧接合工具11‧‧‧ Bonding tools
12‧‧‧軸12‧‧‧Axis
13‧‧‧終端塊13‧‧‧Terminal block
14‧‧‧環14‧‧‧ Ring
20‧‧‧下平板連結件20‧‧‧ Lower plate connector
21,31‧‧‧環狀板21,31‧‧‧ring plate
30‧‧‧上平板連結件30‧‧‧Upper plate link
31a‧‧‧第1邊31a‧‧‧1st side
31b‧‧‧第2邊31b‧‧‧2nd side
22,32‧‧‧橫越板22,32‧‧‧cross board
33‧‧‧固定點33‧‧‧ fixed point
24,34‧‧‧中空部分24,34‧‧‧ hollow part
40‧‧‧桿40‧‧‧ pole
40c‧‧‧旋轉軸40c‧‧‧Rotary axis
41‧‧‧前端部41‧‧‧ front end
42‧‧‧螺栓42‧‧‧ bolt
43‧‧‧後端部43‧‧‧ Back end
44‧‧‧中央塊44‧‧‧Central block
45‧‧‧十字板彈簧45‧‧‧cross plate spring
46‧‧‧水平彈簧板46‧‧‧ horizontal spring plate
47‧‧‧垂直彈簧板47‧‧‧Vertical spring plate
48‧‧‧配重塊48‧‧‧weights
49‧‧‧連結板49‧‧‧Link board
50‧‧‧接合頭50‧‧‧ Bonding head
51‧‧‧本體51‧‧‧Ontology
52‧‧‧下臂52‧‧‧ Lower arm
53‧‧‧上臂53‧‧‧ upper arm
54‧‧‧螺栓54‧‧‧ bolt
55‧‧‧襯套55‧‧‧ bushing
56‧‧‧擋止件56‧‧‧stops
57‧‧‧孔57‧‧‧ hole
58‧‧‧彈簧58‧‧‧ Spring
61‧‧‧滑件61‧‧‧Sliding parts
62‧‧‧線性導件62‧‧‧Linear guides
71,72‧‧‧中心線71,72‧‧‧ center line
73‧‧‧直線73‧‧‧ Straight line
81‧‧‧拾取載台81‧‧‧ Picking up the stage
83‧‧‧切割帶83‧‧‧Cut tape
90‧‧‧半導體晶片90‧‧‧Semiconductor wafer
100‧‧‧晶粒接合裝置100‧‧‧die bonding device
圖1係顯示本發明之實施形態中之晶粒接合裝置之構造之立體圖。Fig. 1 is a perspective view showing the structure of a die bonding apparatus in an embodiment of the present invention.
圖2係顯示本發明之實施形態中之晶粒接合裝置之平板連結件之立體圖。Fig. 2 is a perspective view showing a flat plate coupling of the die bonding apparatus in the embodiment of the present invention.
圖3係顯示本發明之實施形態中之晶粒接合裝置之拾取半導體晶片前之狀態之剖面圖。Fig. 3 is a cross-sectional view showing a state before the semiconductor wafer is picked up by the die bonding apparatus in the embodiment of the present invention.
圖4係顯示本發明之實施形態中之晶粒接合裝置之拾取半導體晶片之狀態之剖面圖。Fig. 4 is a cross-sectional view showing a state in which a semiconductor wafer is picked up by a die bonding apparatus in an embodiment of the present invention.
圖5係顯示本發明之實施形態中之晶粒接合裝置之平板連結件之變形狀態之立體圖。Fig. 5 is a perspective view showing a deformed state of the flat plate coupling of the die bonding apparatus in the embodiment of the present invention.
圖6係顯示本發明之實施形態中之晶粒接合裝置之平板連結件之變形狀態之側視圖。Fig. 6 is a side view showing a deformed state of the flat fastener of the die bonding apparatus in the embodiment of the present invention.
圖7係顯示本發明之實施形態中之晶粒接合裝置之接合頭之相對沉入量之按壓荷重之變化之圖表。Fig. 7 is a graph showing changes in the pressing load of the relative sinking amount of the bonding head of the die bonding apparatus in the embodiment of the present invention.
圖8係顯示本發明之實施形態中之晶粒接合裝置之接合頭之降下速度與繞桿之旋轉軸之旋轉力矩之變化與按壓荷重之變化之圖表。Fig. 8 is a graph showing changes in the lowering speed of the bonding head of the die bonding apparatus and the rotational torque of the rotating shaft around the rod and the change in the pressing load in the die bonding apparatus according to the embodiment of the present invention.
圖9係顯示本發明之實施形態中之晶粒接合裝置之接 合工具接觸半導體晶片後之按壓荷重之變化之圖表。Figure 9 is a view showing the connection of the die bonding apparatus in the embodiment of the present invention. A graph of the change in pressing load after the tool contacts the semiconductor wafer.
11‧‧‧接合工具11‧‧‧ Bonding tools
12‧‧‧軸12‧‧‧Axis
13‧‧‧終端塊13‧‧‧Terminal block
14‧‧‧環14‧‧‧ Ring
20‧‧‧下平板連結件20‧‧‧ Lower plate connector
21,31‧‧‧環狀板21,31‧‧‧ring plate
22,32‧‧‧橫越板22,32‧‧‧cross board
24,34‧‧‧中空部分24,34‧‧‧ hollow part
30‧‧‧上平板連結件30‧‧‧Upper plate link
33‧‧‧固定點33‧‧‧ fixed point
40‧‧‧桿40‧‧‧ pole
40c‧‧‧旋轉軸40c‧‧‧Rotary axis
41‧‧‧前端部41‧‧‧ front end
42‧‧‧螺栓42‧‧‧ bolt
43‧‧‧後端部43‧‧‧ Back end
44‧‧‧中央塊44‧‧‧Central block
45‧‧‧十字板彈簧45‧‧‧cross plate spring
46‧‧‧水平彈簧板46‧‧‧ horizontal spring plate
47‧‧‧垂直彈簧板47‧‧‧Vertical spring plate
48‧‧‧配重塊48‧‧‧weights
49‧‧‧連結板49‧‧‧Link board
50‧‧‧接合頭50‧‧‧ Bonding head
51‧‧‧本體51‧‧‧Ontology
52‧‧‧下臂52‧‧‧ Lower arm
53‧‧‧上臂53‧‧‧ upper arm
54‧‧‧螺栓54‧‧‧ bolt
55‧‧‧襯套55‧‧‧ bushing
56‧‧‧擋止件56‧‧‧stops
57‧‧‧孔57‧‧‧ hole
58‧‧‧彈簧58‧‧‧ Spring
61‧‧‧滑件61‧‧‧Sliding parts
62‧‧‧線性導件62‧‧‧Linear guides
100‧‧‧晶粒接合裝置100‧‧‧die bonding device
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| JP2011162715A JP5705052B2 (en) | 2011-07-26 | 2011-07-26 | Die bonding equipment |
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| TWI451515B true TWI451515B (en) | 2014-09-01 |
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| JP (1) | JP5705052B2 (en) |
| KR (1) | KR101380816B1 (en) |
| CN (1) | CN102903647B (en) |
| TW (1) | TWI451515B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6695225B2 (en) * | 2016-07-12 | 2020-05-20 | 株式会社ディスコ | Transport unit |
| CN108447803B (en) * | 2018-03-26 | 2019-01-25 | 沛县国源光伏电力有限公司 | A kind of novel slice type semiconductor ultra-thin packaging system |
| JP7128697B2 (en) * | 2018-09-19 | 2022-08-31 | ファスフォードテクノロジ株式会社 | Die bonding apparatus and semiconductor device manufacturing method |
| CN109817532B (en) * | 2019-03-28 | 2020-12-15 | 惠州西文思技术股份有限公司 | Processing equipment for chip |
| CN113977028B (en) * | 2021-10-28 | 2023-04-25 | 恩纳基智能科技无锡有限公司 | Eutectic welding equipment |
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|---|---|---|---|---|
| TW200300995A (en) * | 2001-12-05 | 2003-06-16 | Esec Trading Sa | Apparatus for mounting semiconductor chips |
| TWI277166B (en) * | 2002-07-17 | 2007-03-21 | Matsushita Electric Ind Co Ltd | Method and apparatus for picking up semiconductor chip and suction and exfoliation tool used therefor |
| TW200735233A (en) * | 2005-05-20 | 2007-09-16 | Shinkawa Kk | Bonding device for chip |
| TWI318781B (en) * | 2003-04-10 | 2009-12-21 | Panasonic Corp | Apparatus and method for picking up semiconductor chip |
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| JPH01208837A (en) * | 1988-02-17 | 1989-08-22 | Hitachi Ltd | Arm device and bonding device using the same |
| JP2635889B2 (en) * | 1992-06-24 | 1997-07-30 | 株式会社東芝 | Die bonding equipment |
| JP3206486B2 (en) * | 1997-04-08 | 2001-09-10 | 松下電器産業株式会社 | Bonding head in chip bonding equipment |
| JPH10308405A (en) * | 1997-05-08 | 1998-11-17 | Mitsubishi Electric Corp | Device and method for bonding, and manufacture of semiconductor device |
| JP2000269240A (en) * | 1999-03-16 | 2000-09-29 | Hitachi Cable Ltd | Manufacture of optical module and optical element mounting device |
| JP3402284B2 (en) * | 1999-10-29 | 2003-05-06 | 日本電気株式会社 | Bonding equipment |
| TW559963B (en) * | 2001-06-08 | 2003-11-01 | Shibaura Mechatronics Corp | Pressuring apparatus of electronic device and its method |
| CH697294B1 (en) * | 2003-12-22 | 2008-08-15 | Oerlikon Assembly Equipment Ag | A method for the calibration of the gripping axis of the bonding head of an automatic machine for the mounting of semiconductor chips on a substrate. |
| JP2005340411A (en) * | 2004-05-26 | 2005-12-08 | Nidec Tosok Corp | Bonding device |
| JP2006324533A (en) | 2005-05-20 | 2006-11-30 | Nidec Tosok Corp | Bonding load control unit |
| KR100851567B1 (en) | 2007-04-03 | 2008-08-12 | 주식회사 탑 엔지니어링 | Bonding head for bonding machine |
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2011
- 2011-07-26 JP JP2011162715A patent/JP5705052B2/en active Active
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2012
- 2012-06-12 TW TW101120965A patent/TWI451515B/en active
- 2012-07-05 KR KR1020120073274A patent/KR101380816B1/en active IP Right Grant
- 2012-07-26 CN CN201210261799.0A patent/CN102903647B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200300995A (en) * | 2001-12-05 | 2003-06-16 | Esec Trading Sa | Apparatus for mounting semiconductor chips |
| TWI277166B (en) * | 2002-07-17 | 2007-03-21 | Matsushita Electric Ind Co Ltd | Method and apparatus for picking up semiconductor chip and suction and exfoliation tool used therefor |
| TWI318781B (en) * | 2003-04-10 | 2009-12-21 | Panasonic Corp | Apparatus and method for picking up semiconductor chip |
| TW200735233A (en) * | 2005-05-20 | 2007-09-16 | Shinkawa Kk | Bonding device for chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102903647B (en) | 2014-12-24 |
| KR20130012917A (en) | 2013-02-05 |
| CN102903647A (en) | 2013-01-30 |
| JP5705052B2 (en) | 2015-04-22 |
| TW201306154A (en) | 2013-02-01 |
| JP2013026585A (en) | 2013-02-04 |
| KR101380816B1 (en) | 2014-04-04 |
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