TWI450347B - 銲線接合結構 - Google Patents

銲線接合結構 Download PDF

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TWI450347B
TWI450347B TW097139655A TW97139655A TWI450347B TW I450347 B TWI450347 B TW I450347B TW 097139655 A TW097139655 A TW 097139655A TW 97139655 A TW97139655 A TW 97139655A TW I450347 B TWI450347 B TW I450347B
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Taiwan
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wire
copper
intermediate material
wire bonding
bonding structure
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TW097139655A
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TW201011843A (en
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Hsiao Chuan Chang
Tsung Yueh Tsai
Yi Shao Lai
Ho Ming Tong
Jian Cheng Chen
Wei Chi Yih
Chang Ying Hung
Cheng Wei Huang
Chih Hsing Chen
Tai Yuan Huang
Chieh Ting Chen
Yi Tsai Lu
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Advanced Semiconductor Eng
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Priority to TW097139655A priority Critical patent/TWI450347B/zh
Priority to US12/501,246 priority patent/US8110931B2/en
Publication of TW201011843A publication Critical patent/TW201011843A/zh
Application granted granted Critical
Publication of TWI450347B publication Critical patent/TWI450347B/zh

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Description

銲線接合結構
本發明係有關於一種銲線接合結構,更特別有關於一種銲線接合結構,其中間材料介於銅製銲線與鋁製接墊之間作為施壓緩衝之用,藉此該銅製銲線在施壓製程時所造成之力將不會損壞鋁製接墊之結構。
參考第1圖,在半導體封裝構造製程中,銲線接合方法的技術廣泛地將銲線14應用於晶片10之接墊11與基板12之接墊13間的電性連接。打線接合製程是以金線為主,但銅線具有低成本的優勢。相較於金,銅具有較佳的導電性及導熱性,可使銅製銲線之線徑較細及散熱效率較佳。然而,銅具有延性不足及易氧化的缺點,使銅製銲線在應用上仍有所限制。
目前,銅製銲線只能應用在大尺寸之晶片接墊或低介電值材料(low-K)晶圓之晶片接墊,其原因在於銅製銲線接合製程之成功將取決於晶片接墊之結構強度。為了避免銅製銲線接合製程之失敗,小尺寸晶片接墊將被限制。
參考第2至4圖,其顯示習知銅製銲線接合方法。參考第2圖,藉由一打線機,提供一銅製銲線20,其包含一銅線22及一銅球24。該銅球24是利用放電的方法或氫焰燒結成球而連接於該銅線22之一端。參考第3圖,將該銅球24施壓而變形。參考第4圖,藉由一振動製程,將該銅球24接合於一鋁製接墊32。然而,在施壓製程時,由於銅之 硬度較大,因此施壓時銅製銲線20所造成之力將可能損壞鋁製接墊32之結構。再者,先前技術之鋁製接墊32與銅製銲線20之間的介金屬化合物(intermetallic compound; IMC)所形成之數量不足,因此先前技術之銲線接合結構具有較小的鍵結力,進而只具有較低的可靠度。
參考第5圖,美國專利第6,329,722 B1號,標題為“用於積體電路之具有銅金屬化處理的接墊(Bonding Pads for Integrated Circuits Having Copper Interconnect Metallization)”,揭示一種裝置具有薄金屬塗層70(諸如錫),其針對用於積體電路之具有銅金屬化處理的接墊60形成強大的鍵結。該薄金屬塗層70之表面氧化可被限制,且其氧化物可容易地被移除。再者,具有該薄金屬塗層70之接墊60可在低溫時形成介金屬,致使該接墊60可銲接與相容於銲線80。
雖然該錫金屬塗層可在低溫時與銲線之間形成介金屬,但是先前技術之接墊為銅所製必須考慮氧化的問題,諸如該錫金屬塗層必須覆蓋整個該銅製接墊所裸露之面積,以避免銅製接墊之氧化。
因此,便有需要提供一種銲線接合結構,能夠解決前述的缺點。
本發明之一目的在於提供一種銲線接合結構,其中間材料介於銅製銲線與鋁製接墊之間作為施壓緩衝之用,藉此該銅製銲線在施壓製程時所造成之力將不會損壞鋁製接墊 之結構。
為達上述目的,本發明提供一種銲線接合結構,其包含一鋁製接墊、一中間材料及一銅製銲線。該中間材料覆蓋該鋁製接墊,並固定於該鋁製接墊上。該銅製銲線接合於該中間材料。
根據本發明之銲線接合方法,在施壓製程時,由於該中間材料介於該銅製銲線與鋁製接墊之間作為施壓緩衝之用,因此銅製銲線所造成之力將不會損壞鋁製接墊之結構。再者,本發明之銲線接合結構的中間材料與銅製銲線間以及中間材料與鋁製接墊之間皆具有較大的鍵結力,進而具有較高的可靠度。
為了讓本發明之上述和其他目的、特徵、和優點能更明顯,下文將配合所附圖示,作詳細說明如下。
參考第6至9圖,其顯示本發明之第一實施例之晶片製造方法。參考第6圖,提供一晶圓100,其定義有複數個陣列式排列之晶片110。參考第7圖,其顯示本發明之晶片之局部放大圖,每一晶片110包含一保護層112及至少一鋁製接墊132。該保護層112覆蓋該鋁製接墊132,並裸露出一部分之該鋁製接墊132,藉此該鋁製接墊132具有一外面積A1。參考第8圖,將一中間材料140覆蓋該鋁製接墊132,並固定於該鋁製接墊132上。該中間材料140之厚度介於約0.1與約10密爾(mil)之間。
在本實施例中,可藉由一電鍍製程,將該中間材料140 覆蓋該鋁製接墊132,並固定於該鋁製接墊132上。在另一實施例中,可藉由一濺鍍製程,將該中間材料140覆蓋該鋁製接墊132,並固定於該鋁製接墊132上。在又一實施例中,可藉由一印刷製程,將該中間材料140覆蓋該鋁製接墊132,並固定於該鋁製接墊132上。
由於該鋁製接墊132不須考慮氧化問題,因此該中間材料140不須覆蓋整個該鋁製接墊132所裸露之外面積A1。較佳地,該鋁製接墊132被該中間材料140所覆蓋之面積A2可小於99%之該鋁製接墊132的外面積A1。同時,可節省該中間材料140之用量。再者,由於該中間材料140所覆蓋之面積A2必須有足夠大,才能用以銲接於一銲線,因此該鋁製接墊132被該中間材料140所覆蓋之面積A2可大於30%之該鋁製接墊的外面積A1。
參考第9圖,將該晶圓100切割成複數個晶片110,如此以形成本發明之具有鋁製接墊132及中間材料140的晶片110。
另外,參考第10圖,在一替代實施例中,本發明之晶片製造方法可另包含下列步驟:將該中間材料140'之頂面形成有至少一第一圖案141,如此以形成本發明之具有鋁製接墊132及圖案化中間材料140'的晶片110。在本實施例中,可藉由一微影蝕刻製程,將該中間材料140'之頂面形成有至少一第一圖案141。在另一實施例中,可藉由一雷射鑽孔製程,將該中間材料140'之頂面形成有至少一第一圖案141。在又一實施例中,可藉由一機械鑽孔製程, 將該中間材料140'之頂面形成有至少一第一圖案141。參考第11a及11b圖,其顯示該中間材料140'之平面圖。該第一圖案141可為孔穴(cavity),諸如圓形或矩形。該孔穴之深度小於該中間材料140'之厚度。參考第12a及12b圖,其顯示另一種中間材料140'之平面圖。該第一圖案141可為溝槽(trench),諸如直線形溝槽或環形溝槽。該溝槽之深度小於該中間材料140'之厚度。參考第13a至13d圖,其顯示該中間材料140'之剖面圖。該第一圖案141之剖面可為矩形、梯形、三角形或弧形。
參考第14圖,其顯示本發明之第二實施例之晶片製造方法。該第二實施例之晶片製造方法大體上類似於該第一實施例之晶片製造方法,相同元件標示相同的標號。兩者之不同處是在於第二實施例之晶片製造方法中的該中間材料140"包含一黏層142及複數個導電粒子144,該些導電粒子144配置於該黏層142內。藉由塗佈製程,將一中間材料140"覆蓋該鋁製接墊132,並固定於該鋁製接墊132上。該些導電粒子144可為球狀導電粒子,且可為金屬所製。或者,該中間材料140"可為異方性導電膜(anisotropic conductive film; ACF),其導電粒子144只沿壓力方向導通。
參考第15至17圖,其顯示本發明之第一實施例之銲線接合方法。提供本發明之具有鋁製接墊132及中間材料140的晶片110,如第8圖所示。該中間材料140覆蓋該鋁製接墊132,並固定於該鋁製接墊132上。
參考第15圖,藉由一打線機102,提供一銅製銲線120,其包含一線狀部122及一塊狀部124,其中該塊狀部124連接於該線狀部122之一端,且該塊狀部124之剖面面積大於該線狀部122之剖面面積。舉例而言,該塊狀部124是利用放電的方法或氫焰燒結成球而連接於該線狀部122之一端。
參考第16圖,可藉由一施壓製程,將該塊狀部124接觸於該中間材料140,並施壓而變形。由於該中間材料140介於該塊狀部124與鋁製接墊132之間作為施壓緩衝之用,因此施壓時該塊狀部124所造成之力將不會損壞該鋁製接墊132之結構。
參考第17圖,可藉由一振動製程,將該銅製銲線120接合於該中間材料140。該銅製銲線120之塊狀部124接合於該中間材料140,如此以形成本發明之銲線接合結構。
另外,本發明之中間材料140及鋁製接墊132可視為一晶片接墊,且該銅製銲線之一端電性連接於該晶片接墊,該銅製銲線之另一端可電性連接於一基板接墊(如第1圖所示)。該晶片接墊電性連接於該晶片之線路(圖未示)。
在本實施例中,該中間材料140選自錫(Sn)、金(Au)、鋅(Zn)、鉑(Pt)、鈀(Pd)、錳(Mn)、鎂(Mg)、銦(In)、鍺(Ge)及銀(Ag)所構成之群組。該中間材料140與銅製銲線120之間的介金屬化合物所形成之數量大於該鋁製接墊132與銅製銲線120之間的介金屬化合物所形成之數量,且該中間材料140與鋁製接墊132之間的介金屬化合物所形成之 數量大於該鋁製接墊132與銅製銲線120之間的介金屬化合物所形成之數量。因此,該中間材料140與銅製銲線120之間的鍵結力大於該鋁製接墊132與銅製銲線120之間的鍵結力,且該中間材料140與鋁製接墊132之間的鍵結力大於該鋁製接墊132與銅製銲線120之間的鍵結力。
在一替代實施例中,該中間材料140亦可選自鎳(Ni)、釩(V)、鋁(Al)、銅(Cu)、鈦(Ti)、錫(Sn)、金(Au)、鋅(Zn)、鉑(Pt)、鈀(Pd)、錳(Mn)、鎂(Mg)、銦(In)、鍺(Ge)及銀(Ag)所構成之群組中的單一元素或一種以上的元素合金。較佳的組合可為:鎳鈀金(Ni/Pd/Au)之元素合金、鎳鈀(Ni/Pd)之元素合金、鋁鎳銅(Al/Ni/Cu)之元素合金、鈦鎳銅(Ti/Ni/Cu)之元素合金、鈦銅(Ti/Cu)之元素合金或銅錫(Cu/Sn)之元素合金。
根據本發明之銲線接合方法,在施壓製程時,由於該中間材料介於該銅製銲線與鋁製接墊之間作為施壓緩衝之用,因此銅製銲線所造成之力將不會損壞鋁製接墊之結構。再者,本發明之銲線接合結構的中間材料與銅製銲線間以及中間材料與鋁製接墊之間皆具有較大的鍵結力,進而具有較高的可靠度。
參考第18至20圖,其顯示本發明之第二實施例之銲線接合方法。該第二實施例之銲線接合方法大體上類似於該第一實施例之銲線接合方法,相同元件標示相同的標號。兩者之不同處是在於第二實施例之銲線接合方法提供本發明之具有鋁製接墊132及圖案化中間材料140'的晶片 110,如第10圖所示。該圖案化中間材料140'覆蓋該鋁製接墊132,並固定於該鋁製接墊132上。
參考第18圖,藉由一打線機102,提供一銅製銲線120,其包含一線狀部122及一塊狀部124,其中該塊狀部124連接於該線狀部122之一端,且該塊狀部124之剖面面積大於該線狀部122之剖面面積。
參考第19圖,可藉由一施壓製程,將該塊狀部124接觸於及該中間材料140',並施壓而變形。由於該中間材料140'介於該塊狀部124與鋁製接墊132之間作為施壓緩衝之用,因此施壓時該塊狀部124所造成之力將不會損壞該鋁製接墊132之結構。
參考第20圖,可藉由一振動製程,將該銅製銲線120接合於該中間材料140'。該銅製銲線120之塊狀部接124合於該中間材料140',如此以形成本發明之銲線接合結構。
參考第21及22圖,當該塊狀部124接合於該中間材料140'時,若該中間材料140'的硬度大於該銅製銲線120之塊狀部124的硬度,則該中間材料140'之頂面上的第一圖案141會使該銅製銲線120之塊狀部124之底面形成有至少一第二圖案125,且使該第二圖案125接合於該第一圖案141。因此,可增加該鋁製接墊132上之中間材料140'與銅製銲線120之間的接合面積,亦即該鋁製接墊132與銅製銲線120之間具有較大的接合面積。
根據本發明之銲線接合方法,在施壓製程時,由於該中間材料介於該塊狀部與鋁製接墊之間作為施壓緩衝之用, 因此銅製銲線所造成之力將不會損壞鋁製接墊之結構。再者,本發明之銲線接合結構的中間材料與銅製銲線間以及中間材料與鋁製接墊之間皆具有較大的鍵結力,進而具有較高的可靠度。另外,根據本發明之銲線接合結構,該鋁製接墊上之中間材料與銅製銲線之間具有較大的接合面積,亦即具有較大的鍵結力,進而保持充分的鍵結力。
參考第23圖,其顯示本發明之第三實施例之銲線接合方法。該第三實施例之銲線接合方法大體上類似於該第一實施例之銲線接合方法,相同元件標示相同的標號。兩者之不同處是在於第三實施例之銲線接合方法提供本發明之具有鋁製接墊132及中間材料140"的晶片110,如第14圖所示。
在本實施例中,本發明之銲線接合方法乃藉由在鋁製接墊132上塗佈一層中間材料140",亦即在該鋁製接墊132上塗佈一黏層142及複數個導電粒子144。當該銅製銲線120之塊狀部124接合於該鋁製接墊132時,該導電粒子144介於該塊狀部124與鋁製接墊132之間,以作為電性連接之用,且該黏層142亦可增加該塊狀部124與鋁製接墊132之間的結合性。
本發明之銲線接合方法可改善該銅製銲線與該鋁製接墊之間的結合性與電性連接。由於該銲線接合方法可使用較小的功率將該銅製銲線接合於該鋁製接墊,因此可避免發生鋁製接墊之裂開與鋁擠出。
雖然本發明已以前述實施例揭示,然其並非用以限定本 發明,任何本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與修改。因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10‧‧‧晶片
11‧‧‧接墊
12‧‧‧基板
13‧‧‧接墊
14‧‧‧銲線
20‧‧‧銲線
22‧‧‧銅線
24‧‧‧銅球
32‧‧‧接墊
60‧‧‧接墊
70‧‧‧金屬塗層
80‧‧‧銲線
100‧‧‧晶圓
102‧‧‧打線機
110‧‧‧晶片
112‧‧‧保護層
120‧‧‧銲線
122‧‧‧線狀部
124‧‧‧塊狀部
125‧‧‧圖案
132‧‧‧接墊
140‧‧‧中間材料
140'‧‧‧中間材料
140"‧‧‧中間材料
141‧‧‧圖案
142‧‧‧黏層
144‧‧‧導電粒子
A1‧‧‧外面積
A2‧‧‧面積
第1圖為先前技術之銲線接合方法之剖面示意圖。
第2至4圖為先前技術之銅製銲線接合方法之剖面示意圖。
第5圖為先前技術之銲線接合結構之剖面示意圖。
第6至9圖為本發明之第一實施例之晶片製造方法之剖面示意圖。
第10圖為本發明之一替代實施例之晶片製造方法之剖面示意圖。
第11a及11b圖為本發明之中間材料之平面圖。
第12a及12b圖為本發明之另一種中間材料之平面圖。
第13a至13d圖為本發明之中間材料之剖面圖。
第14圖為本發明之第二實施例之晶片製造方法之剖面示意圖。
第15至17圖為本發明之第一實施例之銅製銲線接合方法之剖面示意圖。
第18至20圖為本發明之第二實施例之銅製銲線接合方法之剖面示意圖。
第21至22圖為本發明之銅製銲線及鋁製接墊之剖面示意圖,其顯示銅製銲線之塊狀部接合於該鋁製接墊上之中間材料。
第23圖為本發明之第三實施例之銅製銲線接合方法之剖面示意圖。
120‧‧‧銲線
122‧‧‧線狀部
124‧‧‧塊狀部
132‧‧‧接墊
140‧‧‧中間材料

Claims (23)

  1. 一種銲線接合結構,包含:一鋁製接墊;一中間材料,覆蓋該鋁製接墊,並固定於該鋁製接墊上,其中該中間材料係包含有鎳(Ni)、釩(V)、鈦(Ti)、錫(Sn)、鋅(Zn)、鉑(Pt)、鈀(Pd)、錳(Mn)、鎂(Mg)、銦(In)、鍺(Ge)或銀(Ag)之其中至少一種以上的元素;以及一銅製銲線,接合於該中間材料。
  2. 依申請專利範圍第1項之銲線接合結構,其中該鋁製接墊為一晶片接墊。
  3. 依申請專利範圍第1項之銲線接合結構,其中該中間材料更由鎳(Ni)、釩(V)、鋁(Al)、銅(Cu)、鈦(Ti)、錫(Sn)、金(Au)、鋅(Zn)、鉑(Pt)、鈀(Pd)、錳(Mn)、鎂(Mg)、銦(In)、鍺(Ge)或銀(Ag)之其中至少一種以上的元素所組合成的合金所構成。
  4. 依申請專利範圍第3項之銲線接合結構,其中該元素合金選自鎳鈀金(Ni/Pd/Au)、鎳鈀(Ni/Pd)、鋁鎳銅(Al/Ni/Cu)、鈦鎳銅(Ti/Ni/Cu)、鈦銅(Ti/Cu)及銅錫(Cu/Sn)所構成之群組。
  5. 依申請專利範圍第1項之銲線接合結構,其中該中間材料與銅製銲線之間的介金屬化合物所形成之數量大於該鋁製接墊與銅製銲線之間的介金屬化合物所形成之 數量,且該中間材料與鋁製接墊之間的介金屬化合物所形成之數量大於該鋁製接墊與銅製銲線之間的介金屬化合物所形成之數量。
  6. 依申請專利範圍第5項之銲線接合結構,其中該中間材料與銅製銲線之間的鍵結力大於該鋁製接墊與銅製銲線之間的鍵結力,且該中間材料與鋁製接墊之間的鍵結力大於該鋁製接墊與銅製銲線之間的鍵結力。
  7. 依申請專利範圍第1項之銲線接合結構,其中每一晶片另包含一保護層,覆蓋該鋁製接墊,並裸露出一部分之該鋁製接墊,藉此該鋁製接墊具有一外面積。
  8. 依申請專利範圍第7項之銲線接合結構,其中該鋁製接墊被該中間材料所覆蓋之面積小於99%之該鋁製接墊之外面積。
  9. 依申請專利範圍第8項之銲線接合結構,其中該鋁製接墊被該中間材料所覆蓋之面積大於30%之該鋁製接墊之外面積。
  10. 依申請專利範圍第1項之銲線接合結構,其中該中間材料具有一頂面,其形成有至少一第一圖案。
  11. 依申請專利範圍第10項之銲線接合結構,其中該銅製銲線包含一線狀部及一塊狀部,該塊狀部具有一底面,其形成有至少一第二圖案,該第二圖案對應並接合於該第一圖案。
  12. 依申請專利範圍第10項之銲線接合結構,其中該銅製銲線包含一線狀部及一塊狀部,該塊狀部連接於該線 狀部,該塊狀部之剖面面積大於該線狀部之剖面面積,且該塊狀部接合於該中間材料。
  13. 依申請專利範圍第12項之銲線接合結構,其中該中間材料的硬度大於該銅製銲線之塊狀部的硬度。
  14. 依申請專利範圍第10項之銲線接合結構,其中該第一圖案為孔穴。
  15. 依申請專利範圍第14項之銲線接合結構,其中該孔穴之深度小於該中間材料之厚度。
  16. 依申請專利範圍第14項之銲線接合結構,其中該孔穴為圓形或矩形。
  17. 依申請專利範圍第10項之銲線接合結構,其中該第一圖案為溝槽。
  18. 依申請專利範圍第17項之銲線接合結構,其中該溝槽之深度小於該中間材料之厚度。
  19. 依申請專利範圍第17項之銲線接合結構,其中該溝槽為直線形溝槽或環形溝槽。
  20. 依申請專利範圍第10項之銲線接合結構,其中該第一圖案之剖面為矩形。
  21. 依申請專利範圍第10項之銲線接合結構,其中該第一圖案之剖面為梯形。
  22. 依申請專利範圍第10項之銲線接合結構,其中該第一圖案之剖面為三角形。
  23. 依申請專利範圍第10項之銲線接合結構,其中該第 一圖案之剖面為弧形。
TW097139655A 2008-07-11 2008-10-16 銲線接合結構 TWI450347B (zh)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200425366A (en) * 2003-05-08 2004-11-16 Megic Corp Method of wire bonding over active area of a semiconductor circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200425366A (en) * 2003-05-08 2004-11-16 Megic Corp Method of wire bonding over active area of a semiconductor circuit

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