TWI434891B - 積體電路用高矽含量矽氧烷聚合物 - Google Patents

積體電路用高矽含量矽氧烷聚合物 Download PDF

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Publication number
TWI434891B
TWI434891B TW97103749A TW97103749A TWI434891B TW I434891 B TWI434891 B TW I434891B TW 97103749 A TW97103749 A TW 97103749A TW 97103749 A TW97103749 A TW 97103749A TW I434891 B TWI434891 B TW I434891B
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TW
Taiwan
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group
composition
ether
film
poly
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TW97103749A
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English (en)
Chinese (zh)
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TW200844180A (en
Inventor
朱哈 連達拉
湯瑪斯 葛達
朱里 寶拉沙里
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賽倫斯股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/06—Preparatory processes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Polymers & Plastics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Silicon Polymers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Processes Of Treating Macromolecular Substances (AREA)
  • Paints Or Removers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW97103749A 2007-02-22 2008-01-31 積體電路用高矽含量矽氧烷聚合物 TWI434891B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US90249407P 2007-02-22 2007-02-22

Publications (2)

Publication Number Publication Date
TW200844180A TW200844180A (en) 2008-11-16
TWI434891B true TWI434891B (zh) 2014-04-21

Family

ID=39710569

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97103749A TWI434891B (zh) 2007-02-22 2008-01-31 積體電路用高矽含量矽氧烷聚合物

Country Status (6)

Country Link
US (1) US8133965B2 (https=)
EP (1) EP2113005A2 (https=)
JP (1) JP5350276B2 (https=)
KR (1) KR101647360B1 (https=)
TW (1) TWI434891B (https=)
WO (1) WO2008102060A2 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI439494B (zh) * 2007-02-27 2014-06-01 Braggone Oy 產生有機矽氧烷聚合物的方法
US8657966B2 (en) * 2008-08-13 2014-02-25 Intermolecular, Inc. Combinatorial approach to the development of cleaning formulations for glue removal in semiconductor applications
US8048810B2 (en) * 2010-01-29 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method for metal gate N/P patterning
US9564339B2 (en) 2010-03-29 2017-02-07 Pibond Oy Etch resistant alumina based coatings
US8864898B2 (en) * 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US9011591B2 (en) * 2011-09-21 2015-04-21 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
KR101825546B1 (ko) * 2014-05-26 2018-02-05 제일모직 주식회사 실리카계 막 형성용 조성물, 및 실리카계 막의 제조방법
KR102373339B1 (ko) 2018-08-10 2022-03-10 버슘머트리얼즈 유에스, 엘엘씨 규소 화합물 및 이를 사용하여 막을 증착시키는 방법
EP4325548A3 (en) * 2018-08-10 2024-04-10 Versum Materials US, LLC Silicon compounds and methods for depositing films using same
FI129480B (en) * 2018-08-10 2022-03-15 Pibond Oy Silanol-containing organic-inorganic hybrid coatings for high resolution patterning
CN110283315B (zh) * 2019-06-25 2021-06-08 湖北兴瑞硅材料有限公司 一种利用甲基氯硅烷副产物生产羟基硅油的方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6962727B2 (en) * 1998-03-20 2005-11-08 Honeywell International Inc. Organosiloxanes
US6872456B2 (en) * 2001-07-26 2005-03-29 Dow Corning Corporation Siloxane resins
US6852367B2 (en) * 2001-11-20 2005-02-08 Shipley Company, L.L.C. Stable composition
KR100985272B1 (ko) * 2002-01-17 2010-10-04 질렉스 오와이 집적 회로에 적용하기 위한 혼성 유기-무기 유전체를 위한폴리(유기실록산) 물질 및 방법
US20050032357A1 (en) * 2002-01-17 2005-02-10 Rantala Juha T. Dielectric materials and methods for integrated circuit applications
JP2004059738A (ja) * 2002-07-29 2004-02-26 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜
JP2006526672A (ja) * 2003-04-11 2006-11-24 シレクス オサケユキチュア 低ｋ誘電体形成用有機シルセスキオキサン重合体
JP2004006890A (ja) * 2003-05-27 2004-01-08 Tokyo Ohka Kogyo Co Ltd 多層配線構造の形成方法
JP4110401B2 (ja) * 2003-06-13 2008-07-02 信越化学工業株式会社 感光性シリコーン樹脂組成物及びその硬化物並びにネガ型微細パターンの形成方法
JP4491283B2 (ja) * 2004-06-10 2010-06-30 信越化学工業株式会社 反射防止膜形成用組成物を用いたパターン形成方法
JP4379596B2 (ja) * 2004-06-10 2009-12-09 信越化学工業株式会社 犠牲膜形成用組成物、パターン形成方法、犠牲膜及びその除去方法
DE602005003475T2 (de) * 2004-07-16 2008-09-25 Dow Corning Corp., Midland Strahlungsempfindliche silikonharzzusammensetzung
SG119379A1 (en) * 2004-08-06 2006-02-28 Nippon Catalytic Chem Ind Resin composition method of its composition and cured formulation
KR101222428B1 (ko) * 2004-08-31 2013-01-15 질렉스 오와이 폴리유기실록산 유전 물질
JP4513966B2 (ja) * 2005-03-07 2010-07-28 信越化学工業株式会社 プライマー組成物及びそれを用いた電気電子部品
WO2006134206A2 (en) * 2005-06-13 2006-12-21 Silecs Oy Functionalized silane monomers with bridging hydrocarbon group and siloxane polymers of the same

Also Published As

Publication number Publication date
JP2010519375A (ja) 2010-06-03
US8133965B2 (en) 2012-03-13
WO2008102060A3 (en) 2009-03-05
KR20090127140A (ko) 2009-12-09
WO2008102060A2 (en) 2008-08-28
TW200844180A (en) 2008-11-16
JP5350276B2 (ja) 2013-11-27
US20080206578A1 (en) 2008-08-28
EP2113005A2 (en) 2009-11-04
KR101647360B1 (ko) 2016-08-10

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