TWI433292B - 單石微波積體電路 - Google Patents

單石微波積體電路 Download PDF

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TWI433292B
TWI433292B TW100131495A TW100131495A TWI433292B TW I433292 B TWI433292 B TW I433292B TW 100131495 A TW100131495 A TW 100131495A TW 100131495 A TW100131495 A TW 100131495A TW I433292 B TWI433292 B TW I433292B
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heat sink
circuit board
transmission line
printed circuit
top surface
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TW100131495A
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TW201225243A (en
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Shahed Reza
Edward Swiderski
Roberto W Alm
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Raytheon Co
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Description

單石微波積體電路
本案大致相關於單石微波積體電路(MMIC)及更明確地說明有關於具有散熱器的MMIC。
如於本技藝所知，單石微波積體電路(MMIC)具有大範圍的應用。典型地，多數主動裝置(例如場效電晶體(FET)係被形成在半導體基材結構中，及該等也與微波傳輸線互連的裝置形成在基材結構上，以例如形成多數互連放大器。一類型之微波傳輸線為共平面波導(CPW)傳輸線。
如同於本技藝所知，對於某些高功率應用，CPW MMIC的底側係被金屬化，使得散熱器可以如圖1示被附著。吾人發現此增加之金屬表面，結合上用於CPW的接地面所用之頂側金屬形成兩導體、平行板系統，其可以支援波導模式，其於為CPW所互連的放大器旁產生回授，造成不想要的放大器振盪。如果相關於此模式之諧振頻率落入放大器電路的操作頻率內，則可能阻礙該電路的適當操作。有關於此類型之模式之不想要振盪係以9.187GHz(即沒有輸入信號的固有諧振)加以實驗驗證如圖2所示並發現為電路的適當操作的限制器。除了在MMIC之頂及底金屬面間之波導模式外，我們發現如果MMIC係放置於印刷電路板(PCB)呈倒裝晶片架構(圖1)，則可能發生另一類型之模式。在此時，兩導體系統係被MMIC的頂金屬面及PCB上之接地面所形成。此模式同時也以上述相同方式中斷適當的電路操作。
在一實施例中，單石微波積體電路結構設有：半導體基材結構；多數主動裝置形成在該基材結構的底面部份中；及微波傳輸線，形成在該基材結構的底面上，具有輸入部、輸出部及電連接於輸入部與輸出部間之互連部，此等互連部電互連該等主動裝置。半導體基材結構具有：第一週邊區，分佈於其頂面上在輸入部之上；內區域，分佈於頂面上在互連部之上；及第二週邊區，分佈於其頂面上在輸出部之上。散熱器係被安置於該基材結構的頂面上。金屬層係被安置在基材結構的頂面上在散熱器之下。該金屬層具有外部週邊終結於該散熱器的外週邊。
在一實施例中，微波傳輸線係為共平面波導傳輸線。
在一實施例中，單石微波積體電路結構包含：印刷電路板，具有：導電體於其中；導電凸塊在該印刷電路板的上面，此等凸塊係與傳輸線作電接觸；及導電導孔，通入該印刷電路板，在該印刷電路板的導電體與導電凸塊之間。
在一實施例中，單石微波積體電路結構設有包含：半導體基材結構：多數主動裝置，形成在基材結構的底面部中；微波傳輸線，形成在基材結構的底面，具有輸入部、輸出部及電連接該輸入部與該輸出部間之互連部，此互連部電互連該主動裝置。該半導體基材結構具有：第一週邊區，安置在其頂面上及在輸入部之上；內區域，安置在其頂面上並在該互連部之上；及第二週邊區安裝在其頂面上在該輸出部之上。導熱散熱器係安裝在該基材結構的頂面部上，使得散熱器被安裝在該互連部之上並具有一外週邊，其終結於該基材結構的頂面的該第一週邊區及第二週邊區。
在一實施例中，金屬層係安裝在基材結構的頂面上在散熱器下，及其中該金屬層具有外週邊終結在該散熱器的外週邊。
本案之一或更多實施例之細節將在附圖及以下說明中詳述。本案之其他特性、目標及優點將由以下之說明及附圖與申請專利範圍所了解。
在各圖中相同元件符號表示在各圖中之相同元件。
現參考圖3、4及5，顯示單石微波積體電路(MMIC)結構10。結構10包含MMIC晶片12以倒裝晶片架構的方式，安裝在印刷電路板(PCB)14上。MMIC結構10包含：半導體基材結構12，於此，例如為具有多數主動裝置(例如電晶體)形成在基材結構12之底面部份中之GaN，於此多數主動裝置係安排為例如多數之三個微波放大器16(圖5)；及一微波傳輸線18，於此，例如，一共平面波導(CPW)微波傳輸線形成在基材結構12的底面上。如所知，CPW具有帶式導體20，與共平面接地面導線22分開半導體基材12的部份。CPW具有輸入部24、輸出部26及互連部28電連接於輸入部與輸出部之間。互連部電互連主動裝置，於此，電互連三個微波放大器16，如於圖5所示。
半導體基材結構12包含：第一週邊區30，安置在輸入部24的頂面(在被倒裝安裝在PCB之前)上；一內區域32安裝在其頂面在互連部28之上；及第二週邊區34，安裝在其頂面在輸出部26之上。
MMIC結構10包含導熱散熱器40，安置在基材結構10的頂面部份之上，此散熱器被安裝在互連部28之上並具令其外週邊終結於基材結構12的頂面之第一週邊區30與第二週邊區34。MMIC結構10包含導熱的，於此為金屬層42安置在基材結構12之頂面上，在散熱器40下。金屬層42具有外週邊終結於散熱器40的外週邊。
應注意的是，散熱器40或金屬層42均未覆蓋傳輸線18的輸入部24或輸出部26(即未安裝在其上)。
MMIC結構10包含任何適當介電材料之底填層50，其具有導電焊錫凸塊52定位，以表示電連接CPW傳輸線的帶式導體20互連至CPW傳輸線18的輸入及輸出部24、26。
PCB14具有導孔54(圖4)由其上面通入PCB的介電質55至在PCB14內的導電體58，如所示，導孔54係對準焊錫凸塊52。PCB具有接地面導體60。
為了解決透過底填材料50的模式，除了接地信號接地凸塊52被加入外，也有接地凸塊59。這些凸塊將MMIC的頂金屬連接至板的頂金屬層。額外凸塊59連接MMIC12的接地面導體22(圖5)至PCB板的頂金屬層57。凸塊59係被策略地置放，使得a)焊錫凸塊52並未干擾電路操作，b)其中有關於該模式之電場很強，及c)對稱性避免。結果清楚顯示在底填入的模式於16.8GHz被抑制。在基材內的模式係被如預期未改變。
有關圖3、4及5所述之結構10，因為散熱器40及金屬層42均未重疊於傳輸線18的輸入部24或輸出部26(即，未安置於其上)，所以，在基材內的模式被抑制。可以看出，用於此模式之電場在MMIC結構10的輸入及輸出部24、26中很強。這係藉由使用3D全波模擬器的模擬實驗加以驗證。圖6顯示模式分佈圖，具有不同量的背側接地金屬層42係在輸入及輸出部24、26上移除。結果，顯示當接地面金屬42被由輸入/輸出的輸入及輸出部24、26移開時，隔離性改良；更明確地說，標示為“全金屬化”的曲線係被用於圖1的先前技術結構，其中在圖4中之長度“A”及長度“B”均為零(於全金屬化例中)；在標示為“200μm/1200μm”的曲線係分別當在圖4中之長度“A”及長度“B”為200μm及1200μm；標示為“200μm/1400μm”的曲線為圖4中之長度“A”及長度“B”為200μm及1400μm；及標示為“670μm/1400μm”的曲線分別為圖4中之長度“A”及長度“B”為670μm及1400μm。結果顯示兩倍效益：首先，當金屬層42及散熱器接地面40移動離開輸入及輸出部24、26時的耦合降低；再者，波導的有效電長度降低(模式之諧振頻率增加之結果)。合成效果為在想要頻帶內的隔離的顯著改良。凹陷量對於設計係特定並需要在隔離與散熱要求間取得平衡。
結構10的詳細分析係使用3D全波EM解析器加以進行。經由波導模式之頻率與耦合係被認為是以下的強函數：
1.MMIC的實體尺寸(長度、寬度)。半導體基材12與底填50的厚度影響與各個相關的模式。
2.MMIC基材12及底填50材料的相關材料特性(εr ，σ)。
3.在MMIC上之CPW輸入及輸出部24與26的尺寸(長度、寬度及間隙)。
應了解的是，依據本發明之單石微波積體電路結構包含半導體基材結構，其包含多數主動裝置及一微波傳輸線，具有一輸入部、輸出部、及互連部，電互連在一表面上之主動裝置，及在相反面上重疊互連部但並不重疊至少輸入部及輸出部之至少之一。該結構同時也包含一或更多以下特性：其中，微波傳輸線係與波導傳輸線共平面；半導體基材結構；多數主動裝置形成在基材結構的底面部份中；微波傳輸線係被形成在該基材結構的底面，具有輸入部、輸出部及互連部，電連接於該輸入部與該輸出部之間，使得互連部電互連該主動裝置，其中該半導體基材結構具有：第一週邊區，安置在該頂面上並在輸入部之上；內區，安置在其頂面上，在該互連部之上；及第二週邊區係被安置在該頂面上，在該輸出部之上；散熱器，安置在該基材結構的頂面之上；金屬層安置在該基材結構的頂面上在該散熱器之下；及其中該金屬層具有外週邊終結於該散熱器的外週邊；其中該微波傳輸線係與波導傳輸線共平面；印刷電路板具有：導電體在其中，導電凸塊在印刷電路板的上表面，此等凸塊係電接觸傳輸線；導電導孔通入該印刷電路板，在該印刷電路板的導電體與該導電凸塊之間。
或者，依據本案之單石微波積體電路結構包含半導體基材結構；多數主動裝置形成在該基材結構的底面部份上；微波傳輸線，形成在該基材結構的底面上，具有輸入部、輸出部、及互連部，電連接於該輸入部與該輸出部之間，該互連部電互連該主動裝置，其中該半導體基材結構具有：第一週邊區，安置在該輸入部之上的頂面上；內區，安置在該互連部之上的頂面上；及第二週邊區，安置在該輸出部之上的頂面上；及一導熱散熱器，安置在該基材結構的頂面部份上，使得散熱器係被安置在該互連部之上並具有外週邊終結於該基材結構的頂面的該第一週邊區及第二週邊區。該結構也包含一或更多以下特性：其中該微波傳輸線係與該波導傳輸線共平面；金屬層，安置在該基材結構的頂面上，在散熱器之下，及其中該金屬層具有外週邊終結於該散熱器的外週邊；安置在該散熱器之下的基材結構的頂面上之金屬層，及其中該金屬層具有外週邊終結於該散熱器的外週邊；印刷電路板，具有：導電體於其中；導電凸塊，在該印刷電路板的上表面，此等凸塊係與該傳輸線電接觸；導電導孔，通過該印刷電路板在該印刷電路板中的導電體與導電凸塊間；金屬層，安置在該散熱器之下的基材結構的頂面上及其中該金屬層具有外週邊終結在該散熱器的外週邊；金屬層，安置在該散熱器之下的基材結構的頂表面上及其中該金屬層具有外週邊終結於該散熱器的外週邊。
本案的各種實施例已經加以描述。但是，可以了解的是，各種修改可以在不脫離本案的精神與範圍下完成。因此，其他實施例係在以下申請專利範圍內。
10．．．單石微波積體電路結構
12．．．MMIC晶片
14．．．印刷電路板
16．．．微波放大器
18．．．微波傳輸線
20．．．帶式導體
22．．．共平面接地面導體
24．．．輸入部
26．．．輸出部
28．．．互連部
30．．．第一週邊區
32．．．內區
34．．．第二週邊區
40．．．散熱器
42．．．金屬層
50．．．底填材料
52．．．焊錫凸塊
54．．．導孔
55．．．介電質
58．．．導電體
59．．．接地凸塊
60．．．接地面導體
57．．．頂金屬層
圖1為依據先前技術之單石積體電路(MMIC)的剖面示意圖；
圖2為沒有依據先前技術之輸入信號的功率放大器MMIC的輸出功率對頻率曲線；
圖3為依據本案之單石微波積體電路(MMIC)結構的分解示意圖；
圖4為圖3的單石微波積體電路(MMIC)的剖面示意圖；
圖5為沿著圖4的線5-5所取之圖4的MMIC的表面平面圖；及
圖6為用於圖4之結構的MMIC上之金屬層及散熱器的各種尺寸的圖4的結構中之諧振模式曲線，及用於示於圖1之先前技術中之金屬層的多數曲線之一。
5．．．線
12．．．MMIC晶片
14．．．印刷電路板
16．．．微波放大器
18．．．微波傳輸線
20．．．帶式導體
24．．．輸入部
26．．．輸出部
28．．．互連部
30．．．第一週邊區
32．．．內區
34．．．第二週邊區
40．．．散熱器
42．．．金屬層
50．．．底填材料
52．．．焊錫凸塊
54．．．導孔
55．．．介電質
57．．．頂金屬層
58．．．導電體
60．．．接地面導體

Claims (12)

  1. 一種單石微波積體電路結構，包含：半導體晶片，包含：多數主動裝置；及微波傳輸線，具有輸入部、輸出部、及互連部，電互連在該晶片的一表面上的該等主動裝置；及金屬層，在該晶片的重疊該互連部並未重疊該輸入部與該輸出部之至少之一的相反表面上。
  2. 如申請專利範圍第1項所述之單石微波積體電路結構，其中該微波傳輸線係共平面波導傳輸線。
  3. 一種單石微波積體電路結構，包含：半導體晶片；多數主動裝置，形成在該晶片的底面部份中；微波傳輸線，形成在該晶片的該底面上並具有輸入部、輸出部、及互連部，電連接於該輸入部與該輸出部之間，此互連部電互連該等主動裝置；其中該半導體晶片，具有：第一週邊區，安置在其頂面上，該輸入部之上；內區，安置在其頂面上，在該互連部之上；及第二週邊區，安置在其頂面上，在該輸出部之上；散熱器，安置在該晶片的該頂面之上；金屬層，安置在該晶片的該頂面上，在該散熱器之下；及其中該金屬層具有外週邊，其終止在該散熱器的外週 邊。
  4. 如申請專利範圍第3項所述之單石微波積體電路結構，其中該微波傳輸線係共平面波導傳輸線。
  5. 如申請專利範圍第4項所述之單石微波積體電路結構，包含：印刷電路板，具有：導電體，位於該印刷電路板中；導電凸塊，在該印刷電路板的上表面上，此等凸塊係與該傳輸線電接觸；導電導孔，通入該印刷電路板內，於該印刷電路板的該等導電體及該等導電凸塊間。
  6. 一種單石微波積體電路結構，包含：半導體晶片；多數主動裝置，形成在該晶片的底面部份中；微波傳輸線，形成在該晶片的該底面上，該傳輸線具有輸入部、輸出部、及互連部，電連接於該輸入部與該輸出部之間，此互連部電互連該等主動裝置；其中該半導體晶片具有：第一週邊區，安置在其頂面上，在該輸入部之上；內區，安置在其頂面上，在該互連部之上；及第二週邊區，安置在其頂面上，在該輸出部之上；及導熱散熱器，安置在該晶片的頂面部份之上，此散熱器被安置在該互連部之上並具有外週邊，其終止於該晶片的該頂面的該第一週邊區及該第二週邊區。
  7. 如申請專利範圍第6項所述之單石微波積體電路結構，其中該微波傳輸線為共平面波導傳輸線。
  8. 如申請專利範圍第6項所述之單石微波積體電路結構，包含金屬層，安置在該晶片的該頂面上，在該散熱器之下，且其中該金屬層具有外週邊，其終止於該散熱器的該外週邊。
  9. 如申請專利範圍第7項所述之單石微波積體電路結構，包含金屬層，安置在該晶片的該頂面上，在該散熱器之下，且其中該金屬層具有外週邊，其終止於該散熱器的該外週邊。
  10. 如申請專利範圍第6項所述之單石微波積體電路結構，包含：印刷電路板，具有：導電體，位於該印刷電路板中；導電凸塊，在該印刷電路板的上表面上，該等凸塊係電接觸該傳輸線；導電導孔，通入該印刷電路板，在該印刷電路板的該等導電體與該等導電凸塊之間。
  11. 如申請專利範圍第10項所述之單石微波積體電路結構，包含金屬層，安置在該晶片的該頂面上，在該散熱器之下，且其中該金屬層具有外週邊，其終止在該散熱器的該外週邊。
  12. 如申請專利範圍第7項所述之單石微波積體電路結構，包含： 印刷電路板，具有：導電體，位於該印刷電路板中；導電凸塊，在該印刷電路板的上表面上，該等凸塊係電接觸該傳輸線；導電導孔，通入該印刷電路板，在該印刷電路板的該等導電導體與該等導電凸塊之間；及金屬層，安置在該晶片的該頂面上，在該散熱器之下，且其中該金屬層具有外週邊，其終止在該散熱器的該外週邊。
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US8339790B2 (en) 2012-12-25
WO2012033641A1 (en) 2012-03-15
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EP2614524A1 (en) 2013-07-17
EP2614524B1 (en) 2021-09-29

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