US10785863B2 - Circuit support and cooling structure - Google Patents

Circuit support and cooling structure Download PDF

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Publication number
US10785863B2
US10785863B2 US15/948,404 US201815948404A US10785863B2 US 10785863 B2 US10785863 B2 US 10785863B2 US 201815948404 A US201815948404 A US 201815948404A US 10785863 B2 US10785863 B2 US 10785863B2
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Prior art keywords
heat spreader
heat
microwave transmission
substrate
cooling structure
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US15/948,404
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US20190313522A1 (en
Inventor
Susan C. Trulli
Christopher M. Laighton
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Raytheon Co
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Raytheon Co
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Priority to US15/948,404 priority Critical patent/US10785863B2/en
Assigned to RAYTHEON COMPANY reassignment RAYTHEON COMPANY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LAIGHTON, CHRISTOPHER M., TRULLI, SUSAN C.
Priority to PCT/US2019/023988 priority patent/WO2019199443A1/en
Priority to SG11202009487QA priority patent/SG11202009487QA/en
Priority to KR1020207032039A priority patent/KR102250940B1/en
Priority to PL19717033.5T priority patent/PL3776648T3/en
Priority to EP19717033.5A priority patent/EP3776648B1/en
Priority to JP2020555214A priority patent/JP7072669B2/en
Publication of US20190313522A1 publication Critical patent/US20190313522A1/en
Publication of US10785863B2 publication Critical patent/US10785863B2/en
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    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09218—Conductive traces
    • H05K2201/09227—Layout details of a plurality of traces, e.g. escape layout for Ball Grid Array [BGA] mounting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10166—Transistor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10174—Diode
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227—Other objects, e.g. metallic pieces
    • H05K2201/10378—Interposers

Definitions

  • This disclosure relates generally to circuit support and cooling structures.
  • MMICs Monolithic Microwave Integrated Circuits
  • a substrate such as Gallium Arsenide, Gallium Nitride, Silicon, or Silicon Carbide
  • active, heat generating device such as transistors
  • passive devices such as transmission lines, resistors, inductors, and capacitors formed on the upper surface of the substrate.
  • the bottom surface of the MMIC substrate is bonded, and thermally coupled to a highly thermally conductive structure, such as a package base/cold plate, as shown in FIGS.
  • the MMIC die
  • the MIMIC is attached to the top, flat surface of the thermally conductive structure that is typically slightly larger than the MMIC.
  • the MIMIC is affixed (bonded) to a thermally conductive structure having a base/cold plate directly using a Thermal Interface Material (TIM), such as solder, as shown in FIG. 1A .
  • TIM Thermal Interface Material
  • PGS graphite As is also known in the art Pyrolytic Graphite Sheets (PGS) graphite has been used as a thermally conductive structure, as shown FIG. 1C .
  • the PGS graphite is disposed between a heat sink, or cold plate, and a heat source; both the heat sink and heat source being thermally coupled to the PGS graphite.
  • the PGS graphite has anisotropic heat conducting properties for conducing heat therethrough in the basal planes of the PGS graphite.
  • the basal planes are disposed in planes parallel to the planar, upper surface of the heat source to which the PGS graphite is attached; that is, the basal planes of the PGS graphite are parallel to the upper surface of the heat source and the bottom surface of the heat sink; thus, the preferred directions of the heat flow though the PGS graphite is an anisotropic heat conducting properties for conducing heat therethrough along directions parallel to the upper surface of the heat source and the bottom surface of the heat sink. See also U.S. Pat. No. 7,303,005 issued Dec. 4, 2017 inventors Reis et al. See also U.S. patent Application Publication No. U.S. 2003/0116312 A1, publication date Jun. 26, 2003.
  • ultra-high conductivity thermally conductive structures such as diamond are often used; however these thermally conductive structures are costly and the low thermal expansion of diamond can create undesirable mechanical strain on the interface materials and/or require lower thermally-performing, stress absorbing materials to handle the thermal expansion mismatch from diamond to the typically higher expansion ceramics such as Si or SiC on the device side; and metals such as copper or aluminum for the thermally conductive base.
  • MMICs are mounted on surfaces of stacked printed circuit boards and the printed circuit boards are electrically interconnected by vertical conducive vias passing vertically through the boards.
  • thermally conductive vias are used to remove heat from power generating components of the MMIC and pass such heat to a cold plate mounted to the bottom of the bottom one of the stacked printed circuit board while the MMICs and devices are arranged laterally thereby using valuable printed circuit board surface area.
  • a structure comprising: a three-dimensional, thermally conductive support structure comprising a plurality of surfaces; and, a circuit, comprising a plurality of heat generating electrical components disposed on a first portion of plurality of surfaces of the thermally conductive support structure and interconnected by microwave transmission lines disposed on a second portion of the plurality of surfaces of the thermally conductive support structure.
  • the thermally conductive material has anisotropic heat conducting properties for conducting heat therethrough along a preferred plane, the preferred plane intersecting the first portion of the plurality of surfaces of the, thermally conductive support structure.
  • the thermally anisotropic material has a conductive material disposed on the plurality of surfaces.
  • the conductive material provides a ground plane conductor for the microwave transmission lines.
  • the heat generating electrical components have bottom surfaces thermally coupled and bonded to the conductive material.
  • a heat sink is thermally coupled to one of the plurality of surfaces.
  • a structure comprising: a substrate having an input microwaves transmission line and an output microwave transmission line; a three-dimensional, thermally conductive support structure comprising a plurality of surfaces; and, a circuit, comprising a plurality of heat generating electrical components disposed on different ones of the plurality of surfaces of the thermally conductive support structure and interconnected by microwave transmission lines disposed on different ones of the plurality of surfaces of the thermally conductive support structure; and wherein the circuit is electrically connected to the input microwaves transmission line and an output microwave transmission line.
  • a cooling structure comprising: a heat spreader comprising thermally anisotropic material, such material having anisotropic heat conducting properties for conducting heat therethrough along a preferred plane; and, a circuit, comprising a plurality of heat generating electrical components disposed on different ones of a first portion of the plurality of surfaces of the heat spreader and interconnected by microwave transmission lines disposed on different ones of the plurality of surfaces of the heat spreader.
  • the plurality of surfaces having the heat generating electrical components intersect the preferred plane of the thermally anisotropic material.
  • the thermally anisotropic material has a conductive material disposed on the plurality of surfaces.
  • the conductive material provides a ground plane conductor for the microwave transmission lines.
  • the heat generating electrical components have bottom surface thermally coupled and bonded to the conductive material.
  • the cooling si e includes a heat sink thermally coupled to one of the plurality of surfaces.
  • a cooling structure comprising: a substrate having: a plurality of microwave transmission lines disposed on an upper surface of the substrate; and an opening passing through the substrate.
  • a cold plate having a cavity formed in an upper surface of the cold plate is thermally coupled to a bottom surface of the substrate.
  • a heat spreader is provided comprising thermally anisotropic material, such material having anisotropic heat conducting properties for conducting heat therethrough along a preferred plane is provided.
  • the heat spreader has a lower portion passing through the opening onto a bottom surface of the cavity,
  • a circuit is disposed on an upper portion of the heat spreader, the circuit comprising a plurality of heat generating electrical components disposed on different ones of a first portion of a plurality of surfaces of the heat spreader and interconnected by microwave transmission lines disposed on a second portion of the plurality of surfaces of the heat spreader, the preferred plane intersecting the first portion of a plurality of surfaces of the heat spreader.
  • a substrate having an input microwaves transmission line and an output microwave transmission line and wherein the circuit is electrically connected to the input microwaves transmission line and an output microwave transmission line.
  • FIGS. 1A-1C are cross sectional diagrammatical sketches of Monolithic Integrated Circuit (MMIC) cooling structures according to the PRIOR ART;
  • FIG. 1D is a cross sectional diagrammatical sketch of a cooling system using a Pyrolytic Graphite Sheets (PGS) graphite heat spreader according to the PRIOR ART;
  • PPS Pyrolytic Graphite Sheets
  • FIGS. 2A-2D are simplified, diagrammatical, perspective sketches of a cooling structure according to the disclosure.
  • FIG. 2A ′ is an enlarged portion of the cooling structure shown in FIG. 2A , such portion being enclosed by the arrow labelled 2 A′- 2 A′ in FIG. 2A , according to the disclosure;
  • FIG. 3A is a schematic block diagram of a circuit formed on a thermal heat spreader of the cooling structure of FIGS. 2A-2D according to the disclosure;
  • FIG. 3B is a simplified, diagrammatical sketch the cooling structure of FIGS. 2A-2D according to the disclosure.
  • FIG. 4 is an exploded, perspective diagrammatical sketch of the thermal heat spreader of FIGS. 3A and 3B , with portions of one of the e elements thereof being partially broken away to show a portion of a bottom surface of such element of the thermal heat spreader of the cooling structure of FIGS. 2A-2D according to the disclosure;
  • FIG. 5 is an exploded, diagrammatical perspective view sketch, of the cooling structure of FIGS. 2A-2D according to the disclosure
  • FIGS. 6A-6D are simplified, side elevation views of the cooling structure of FIGS. 2A-2D according to the disclosure showing heat flow through the cooling structure of FIGS. 2A-2D according to the disclosure;
  • FIGS. 7A and 7B together is a flow diagrams of the process used to form the cooling structure of FIGS. 2A-2D according to the disclosure;
  • FIG. 8 through FIG. 12D are diagrammatical sketches useful in understand the process used to form the cooling structure of FIGS. 2A-2D ;
  • FIGS. 13A and 13B are diagrammatical, cross-sectional sketches of a portion of the cooling structure of FIGS. 2A-2D showing the process used to electrically interconnect a microwave transmission line of the heat spreader of FIG. 4 with an exemplary one of an electrical component, partially broken, attached to a side of the heat spreader at various steps in such process according to the disclosure;
  • FIG. 14 is schematic block diagram of an H-bridge circuit adapted for configuration on four sides of a heat spreader according to the disclosure.
  • FIGS. 14A and 14B are simplified, diagrammatical, perspective sketches of a cooling structure according to the disclosure.
  • a cooling structure 10 for cooling active, heat generating electrical components here for example, a pair of Field Effect Transistor (FET) MMIC power amplifiers 12 a , 12 b connected between passive circuits, or electrical components, here for example, a power splitter 14 and a power combiner 16 , by microwave transmission lines 17 a , 17 b , respectively, and microwave transmission lines 17 c , 17 d , respectively, as shown, to form a portion of the electrical circuit 18 , as shown in FIG. 3 .
  • FET Field Effect Transistor
  • the MMIC power amplifiers 12 a , 12 b , power splitter 14 , power combiner 16 and microwave transmission lines 17 a , 17 b , 17 c and 17 d are disposed on a heat spreader 24 , to be described and shown in more detail in FIG. 4 . It is to be noted here, however, that the pair of MMIC power amplifiers 12 a , 12 b are thermally coupled to a heatsink/cold plate 19 of the cooling structure 10 through a thermally coupled heat spreader 24 to be described in more detail in connection with FIG. 4 .
  • the power splitter 14 is a conventional four-port power splitter, disposed on. SIDE 1 of the heat spreader 24 , for having: one port fed by an RF input signal on transmission line 17 e , a second port connected to conventional matched impedance terminator 20 a , disposed on SIDE 1 of the heat spreader 24 , through microwave transmission line 17 f ; and a pair of output ports, each one being coupled to a corresponding one of a pair of the pair of MMIC power amplifiers 12 a , 12 b , disposed on opposites SIDE 2 and SIDE 4 , respectively, of the heat spreader 24 , through the pair of microwave transmission lines 17 a , 17 b , respectively, as shown.
  • each one of the MMIC power amplifiers 12 a , 12 b is coupled as inputs to the conventional four-port power combiner 16 , disposed on SIDE 3 of the heat spreader 24 , here a conventional four-port power combiner 16 (here also disposed on the heat spreader 24 ), having a pair of output ports through the microwave transmission lines 17 c , 17 d , respectively, as shown; one of the pair of output ports providing an RF output signal on microwave transmission line 17 g and the other being connected to a conventional matched terminator 20 b , disposed on SIDE 3 of the heat spreader 24 , through microwave transmission line 17 h , as shown.
  • the microwave transmission lines 17 a - 17 h are microstrip transmission lines.
  • a bottom portion of the heat spreader 24 passes through an opening 29 in a printed circuit board 13 having: a dielectric substrate 22 and a ground plane conductor 23 on a bottom surface of the substrate 22 .
  • the printed circuit board 13 has formed on the upper surface thereof: a transmission line 17 e ′ which is connected to a microwave transmission line 17 e ′′ formed on side 1 of the heat spreader 24 , the transmission line 17 e ′ and connected transmission line 17 e ′′ forming the input transmission line 17 e , and a transmission line 17 g ′ which connects to a microwave transmission line 17 g ′′ formed on side 3 of the heat spreader 24 , the transmission line 17 g ′ and connected transmission line 17 g ′′ forming the input transmission line 17 g.
  • the bottom portion of the heat spreader 24 passes through the opening 29 in the printed circuit board 13 onto a bottom surface 31 of a cavity 15 formed an portion of an upper surface 33 of a cold plate 19 .
  • a suitable thermal interface material such as solder or thermally conductive adhesive 53 ( FIGS. 2A, 2A ′) is used to bond the upper surface 33 of the cold plate to the ground plane conductor 23 and the bottom surface of the heat spreader 24 and lower portions of the sidewalls to the heat spreader 24 to the sidewalls and bottom surface of the of the cavity 15 , as shown in FIG.
  • microstrip transmission lines 17 e and 17 g ′ are formed on the printed circuit board 13 by strip conductors 21 a disposed on portions of the upper surface of the dielectric substrate 22 and a ground plane conductor 23 disposed on the bottom surface of the dielectric substrate 22 .
  • the heat spreader 24 here in this example, is a three-dimensional, thermally conductive support structure, multi-sided, here in this example, a six-sided structure, and is shown in more detail in FIG. 4 having a six-sided thermally anisotropic material 28 , here for example pyrolytic graphite, having basal planes, indicated by dashed lines 30 disposed, in this example, in the Y-Z plane, that is, in this example, perpendicular to the upper surface 32 and the bottom surface 34 of the thermally anisotropic material 28 .
  • heat spreader 24 has anisotropic heat conducting properties for conducting heat therethrough along preferred planes (the basal planes 30 ).
  • the four vertical sides (Side 1 , Side 2 , Side 3 and Side 4 ) of the heat spreader 24 , and the thermally anisotropic material 28 are rectangular is shape, here longer along the Z-axis than along either the X-axis or Y-axis. It should be understood that other shapes may be used, for example, they may have more or less than four sides, further, the bottom portion of the heat spreader 24 , and the thermally anisotropic material 28 may be tapered. Further, as will be described in more detail below, the basal planes 30 intersect the bottom surface having the ground plane 51 of the heat generating MMIC power amplifiers 12 a , 12 b , here at ninety degree angles.
  • the basal planes 30 may be in the X-Z plane, or one portion of the basal planes may be in the Y-Z plane and another portion may be in the X-Z plane.
  • the heat spreader 24 includes a thermally and electrically conductive material 36 , here for example a metal, such as copper, serves as an encasing material, sometimes referred to herein as an encapsulation material 36 , to encase all six outer surfaces (top, bottom and four sides) of the thermally anisotropic material 28 . More particularly, the six outer surface of the thermally anisotropic material 28 are brazed to the thermally conductive material 36 with a suitable brazing material 38 , here for example, CuSil an alloy of 72% silver and 28% copper ( ⁇ 1%) marketed by Morgan. Advanced Materials, Quadrant 55-57 High Street Windsor Berkshire, United Kingdom, SL4 1LP; a eutectic alloy primarily used for vacuum brazing.
  • a suitable brazing material 38 here for example, CuSil an alloy of 72% silver and 28% copper ( ⁇ 1%) marketed by Morgan. Advanced Materials, Quadrant 55-57 High Street Windsor Berkshire, United Kingdom, SL4 1LP; a eutectic
  • thermally anisotropic material 28 In another method of attachment, no external bonding agent is used between thermally anisotropic material 28 and thermally conductive material 36 ; for example using; heat and pressure, such as thereto-compression bonding or hot isostatic pressing, for example,
  • the thermally conductive material 36 is an encapsulating material used to encapsulate the thermally anisotropic material 28 and is sometimes also referred to herein as encapsulation material 36 .
  • the surface of the encapsulation material 36 in contact with the MIMIC power amplifiers 12 a , 12 b can be made out of a high-thermal conductivity, but low CTE metal, such as Tungsten (4 PPM/° C.), Molybdenum (5.5 PPM/° C.), an alloy of Copper-Tungsten (5-10 PPM/° C.), an alloy of Copper-Molybdneum (6-10 PPM/° C.), or other such materials.
  • this surface of material 36 in contact with the MMIC power amplifiers 12 a , 12 b can be made out of a ceramic, for example, Aluminum-Nitride (4.5 PPM/° C.), or Silicon Nitride (3.5 PPM/° C.), or others, which also have high thermal conductivity and a lower GTE.
  • an attachment surface that is, the surface of encapsulation material 36 in contact with the MMIC power amplifiers 12 a , 12 b has a lower GTE, as compared to metal like Copper (18 PPM/° C.). Since the MMIC power amplifiers 12 a , 12 b , here have a substrate 50 ( FIGS.
  • 6C, 6D made of, for example, Silicon Carbide, which has a lower CTE (2.8 PPM/° C.), the use of a high thermal conductivity with low CTE material on the top surface of encapsulation material 36 provides good thermal transport with improved CTE matching between the substrate 50 of the MMIC power amplifier 12 a , 12 b and the underlying heat spreader structure 24 .
  • a higher degree of CTE matching between the substrate 50 of the MMIC power amplifier 12 a , 12 b and the underlying heat spreader structure 24 thus achieved, reduces thermal-induced stresses in the substrate 50 of the MMIC power amplifier 12 a , 12 b when the cooling structure 10 is exposed to temperature excursions during operation.
  • improved GTE matching improves the mechanical reliability of the cooling structure 10 by lowering them tab-induced stresses.
  • Better degree of GTE matching thus achieved, also helps increase the choice of materials available to be used for the Thermal interface Materials (TIM) (e.g. solder), here layer 48 a , ( FIGS. 6C and 6D ) and to be described in more detail in connection with FIGS. 9A through 12D used to attach a ground plane 51 ( FIGS. 6C and 6D ) on the bottom of the substrate 50 of the MMIC power amplifier 12 a , 12 b to the heat spreader 24 because TIM layer 43 a stresses are lowered.
  • TIM Thermal interface Materials
  • TIM layer 48 a because, being disposed between the substrate 50 of the MMIC power amplifier 12 a , 12 b and the surfaces of the encapsulation material 36 of heat spreader 24 , thermally coupled to the MMIC power amplifier 12 a , 12 b they would now be subjected to higher thermal-induced stresses.
  • the encapsulation layer material 36 can be of Copper (18 PPM/° C.) and can be perfectly CTE-matched to the heat sink/cold plate 19 also made of copper.
  • improved CTE matching is achieved on all sides of the spreader 24 by employing a combination of encapsulation materials rather than one single material. It is also possible to employ different materials for all or some of the remaining sides, as dictated by the CTE matching and thermal transfer needs of a given application.
  • all or any of the six encapsulating sides can be made out of a metal or a non-metal, as noted above. If non-metal then the added step of writing the ground plane precedes writing the dielectric.
  • the power splitter 14 and power combiner 16 are also bonded to the heat spreader 24 using a TIM e layer 48 b ( FIGS. 6A and 6B ).
  • the terminators 20 a , 20 b are also bonded to the heat spreader 24 using a TIM layer 48 c ( FIGS. 6A and 6B ).
  • the microwave transmission lines 17 a - 17 g arc here microstrip transmission lines with portions of such lines being bonded to the heat spreader.
  • the TIM layer 48 a , 48 b and 48 c may be different bonding material CTEs.
  • the basal planes 30 are parallel to sides 2 and 4 and perpendicular to sides 1 and 3 and hence perpendicular to the bottom surfaces of the power amplifiers 12 a and 12 b .
  • the heat low from the power amplifiers 12 a , 12 b to the heat sink/cold plate 19 is shown by the arrows 61 in FIGS. 6A-6D .
  • a device region R 1 reference FIG.
  • the power splitter 14 and power combiner 16 components have passive device regions R 2 (reference FIG. 2 ) having for example, microwave transmission lines arranged to form such power splitter 14 and power combiner 16 in any conventional manner.
  • the terminators 20 a , 20 b have passive devices, such as resistors, arranged in any conventional manner to provide proper impedance machining termination components.
  • the bottom portion of the heat spreader 24 passes through an opening 29 in the printed circuit board 13 onto the bottom surface of a cavity 15 formed a portion of an upper surface of a cold plate 19 .
  • a small gap 60 is left between the ends of the microwave transmission lines 17 e ′, 17 g ′ on the printed circuit board 13 and the bottom portion of the heat spreader 24 .
  • This gap 60 is filled by injection into the upper portion of the gap 60 with an elastic dielectric material 63 , such as a silicone material, as shown.
  • Next bridging strip conductor 64 is printed onto the dielectric material 63 to electrically interconnect the strip conductor 21 a on the printed circuit board 13 of the microwave transmission lines 17 e ′, 17 g ′ of the dielectric substrate 22 to the strip conductor 21 b ( FIG. 5 ) of the microwave transmission lines 17 e ′′, 17 g ′′ on the heat spreader 24 and thereby form transmission line 17 e , 17 g as described above.
  • the conductive encapsulation material 36 is electrically and thermally connected to the heat sink 197 and therefore to the ground plane conductor 23 of the printed circuit board 13 .
  • other passive elements in addition to directional couplers and power divider/combiners, such as resistors, capacitors, and inductors, for example, may be formed on the sides of the heat spreader 24 using dielectric material and conductive material arranged appropriately to form such passive devices.
  • a resistive material may then be printed over the dielectric material printed and cured on the conductive encapsulation material 36 in a region where a resistor is to be formed with one end of the resistive material being connected to a strip conductor of a microwave transmission line and the other end being connected to a printed strip, conductor that passes over the edge of the dielectric material to the conductive encapsulation material 36 , which as noted above, is electrically connected to the ground plane conductor 23 .
  • the terminators 20 a , 20 b may be such a resistor having an impedance to provide a matched load for the electrical circuit 18 ( FIGS. 3A, 3B ).
  • FIG. 7 a flow diagram of the process used to form the cooling structure 10 , FIGS. 2A-2D is shown. It is first noted that the process may be performed using computer controlled Additive Manufacturing (AM) or 3D printed processes.
  • the heat spreader 24 is formed ( FIG. 8 ), Step 100 .
  • the MMIC power amplifiers 12 a , 12 b , splitter 14 and combiner 16 are attached to sides of the formed heat spreader 24 with TIM 48 a with the ground plane conductors 51 as described above in connection with FIGS. 6C and 6D ( FIGS. 9A-9D ) Step 200 .
  • ground plane conductors 51 of the MMIC power amplifiers 12 a , 12 b are perpendicular to the basal planes 30 while the ground plane conductors 51 of the splitter 14 and combiner 16 are parallel to the basal planes 30 , see FIGS. 6A-6D ,
  • a dielectric material 71 is printed and then cured over the heat spreader 24 in regions exposed by the attached MMIC power amplifiers 12 a , 12 b , splitter 14 , combiner 16 and terminators 20 a , 20 b and also leaving the lower and bottom portions of the heat spreader 24 uncovered thereby leaving the encapsulating material 36 exposed on the lower and bottom portions of the heat spreader 24 ( FIGS. 10A-10D ), Step 300 .
  • a dielectric material 73 is printed and then cure to till any seam, or small space 57 ( FIG. 13A ), that may exist between the cured dielectric material 71 and the components: the MMIC power amplifiers 12 a , 12 b ; splitter 14 ; and combiner 16 , and terminators 20 a , 20 b , as shown in FIGS. 13A and 13 B for an exemplary one of the components, here for example, the MMIC power amplifier 12 a , ( FIGS. 11A-11D ).
  • Step 400 Strip conductors 21 b ( FIGS.
  • the dielectric material ' 73 has a low Young's modulus (an elastic dielectric material such as, for example, silicone). The Young's modulus is selected to enable expansion and contraction of such elements over the temperature operating and storage range without resulting in breakage of electrical interconnect passing over such gap filling materials.
  • Form the input and output microwave transmission lines interconnects 17 e ′, 17 g ′ are on printed circuit board 13 , such printed circuit board 13 having the opening 29 passing through it for receiving the lower portion 92 ( FIGS. 5, 12A-12D ) of the heat spreader 24 , Step 600 .
  • the cold plate 19 is formed with the cavity 15 in the upper surface, Step 700 .
  • a thermal interface material (TIM) 53 here for example solder, is applied to the upper surface of the cold plate 19 and to the sidewalls and bottom of cavity 15 in cold plate 19 ( FIG. 2A ′), Step 800 .
  • the lower portion 92 ( FIGS. 5, 12A-12D ) of the heat spreader 24 is inserted through the opening 29 in the printed circuit board 13 onto the bottom surface of the cavity 15 in the cold plate 19 .
  • FIG. 2A ′ that vertical edges of the opening 29 in the printed circuit board 13 are spaced from the encapsulating material 36 on the sides of the lower portions 92 of the heat spreader 24 thereby leaving a gap 60 between the vertical edges of the printed circuit board 13 and the encapsulating material 36 , Step 900 . It is noted in FIG.
  • thermal interface material (TIM) 53 is applied below the level of strip conductors of the input and output microwave transmission lines interconnects 17 e ′, 17 g ′ and the TIM 53 is used to bond the encapsulating material 36 to the sidewalls and bottom surface of the heat spreader 24 to the sidewalls and bottom of the cavity 15 and also bond the printed circuit board 13 (the ground plane conductor 23 ( FIG. 2A ′) to the upper surface of the cold plate 19 by reflow or curing, Step 1000 .
  • a dielectric material 63 ( FIG. 2A ′) having a low Young's modulus (an elastic dielectric material such as, for example, silicone) is printed and then cured in the gap 60 above the thermal interface material (TIM) 53 ( FIG.
  • Step 1100 The Young' s modulus is selected to enable expansion and contraction of such elements over the temperature operating and storage range without resulting in breakage of electrical interconnect passing over such seam or bridge gap filling materials.
  • Bridging strip conductors 64 are printed and then cured over portions of strip conductors of the microwave transmission lines 17 e ′, 17 g ′ on dielectric substrate 22 and cured over portions of strip conductors of the microwave transmission lines 17 e ′′, 17 g ′′ on the dielectric material 71 to electrically interconnect the input and output microwave transmission lines 17 e , 17 g on the printed circuit board 13 with the microwave transmission lines 17 e , 17 g on the heat spreader 24 and thereby complete the circuit 18 , Step 1200 .
  • CTEs Coefficients of Thermal Expansions
  • dielectric filling materials used to fill gaps and seams between elements should have sufficient elasticity (Young's modulus) to enable expansion and contraction of such elements over the temperature operating and storage range without resulting in breakage of electrical interconnect passing over such seam or bridge gap filling materials.
  • transmissions and splitter, combiner or other matching networks and accompanying bias networks may be realized on the structure 24 in a number of ways.
  • Dielectric materials may be additively printed using paste or filament and the strip conductors on the heat spreader 24 may be printed using AM or 3D printing.
  • the circuit may be formed on a flexible, conformable substrate and then bonded to the structure 24 with a suitable TIM.
  • the microwave transmission lines 17 a - 17 h may be formed using, for example, computer controlled Additive Manufacturing (AM) or 3D printing, for example.
  • bias control lines including lines +V, ⁇ V ( FIGS. 2A-2D ) for supplying voltages to the MMIC amplifiers 12 a , 12 b may also be printed on dielectric layer 71 on the same or additional layers of dielectric 71 .
  • terminators 20 a , 20 b have been shown and described as being on sides 1 and 3 , respectively, they may be on sides 2 and 4 , respectively, and with transmission lines 17 f and 17 h , respectively having portions on sides 1 and 4 , and sides 3 and 2 , respectively.
  • the sides having the heat generating elements of the circuit need not be disposed in planes that are perpendicular (ninety degrees) to bottom surface of the substrate of the power MMIC amplifiers 12 a , 12 b but may be in planes that intersect the bottom surface of the substrate of the heat generating elements heat generating elements of the circuit at other angles than ninety degrees, such as, for example, 45 degrees or 30 degrees.
  • the splitter 14 and combiner 16 are described above as being individual passive components that are bonded to the heat spreader 24 they may be formed with strip conductors in the same manner as the transmissions lines on the dielectric material 71 formed over the portion of the surface of the heat spreader 24 where such splitter 14 and combiner 16 individual components are now located.
  • strip conductors on the heat spreader 24 and components on the heat spreader 24 may be made with ribbon or wire bonds.
  • the disclosure may be used with other applications than to splitting and combining networks and in power applications such as, for example, H-bridge designs, for example, see FIGS. 14, 14A and 14B where Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) Q 1 -Q 4 are connected to diodes D 1 -D 4 , as shown in FIG. 14 .
  • MOSFETs Metal Oxide Semiconductor Field Effect Transistors
  • MOSFETs Q 1 -Q 2 and diodes D 1 -D 2 are bonded and thermally coupled to side 2 of the spreader 24 and that the MOSFETs Q 3 -Q 4 and diodes D 3 -D 3 are bonded and thermally coupled to opposite side 4 spreader 24 , such sides 2 and 4 being perpendicular to the basal planes 30 of the spreader 24 , FIG. 4 , FIGS. 14, 14A and 14B .

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  • Power Engineering (AREA)
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Abstract

A MMIC support and cooling structure having a three-dimensional, thermally conductive support structure having a plurality of surfaces and a circuit having a plurality of heat generating electrical components disposed on a first portion of the surfaces and interconnected by microwave transmission lines disposed on a second portion of the plurality of surfaces of the thermally conductive support structure.

Description

TECHNICAL FIELD
This disclosure relates generally to circuit support and cooling structures.
BACKGROUND
As is known in the art, one technique used to cool electrical circuits, such as Monolithic Microwave Integrated Circuits (MMICs) include a substrate, such as Gallium Arsenide, Gallium Nitride, Silicon, or Silicon Carbide, having active, heat generating device, such as transistors, formed in a semiconductor region of the upper surface of the substrate, and passive devices, such as transmission lines, resistors, inductors, and capacitors formed on the upper surface of the substrate. The bottom surface of the MMIC substrate is bonded, and thermally coupled to a highly thermally conductive structure, such as a package base/cold plate, as shown in FIGS. 1A-1C, where the MMIC (die) is attached to the top, flat surface of the thermally conductive structure that is typically slightly larger than the MMIC. In some cases, the MIMIC is affixed (bonded) to a thermally conductive structure having a base/cold plate directly using a Thermal Interface Material (TIM), such as solder, as shown in FIG. 1A.
As is also known in the art Pyrolytic Graphite Sheets (PGS) graphite has been used as a thermally conductive structure, as shown FIG. 1C. Here, the PGS graphite is disposed between a heat sink, or cold plate, and a heat source; both the heat sink and heat source being thermally coupled to the PGS graphite. The PGS graphite has anisotropic heat conducting properties for conducing heat therethrough in the basal planes of the PGS graphite. Here, the basal planes are disposed in planes parallel to the planar, upper surface of the heat source to which the PGS graphite is attached; that is, the basal planes of the PGS graphite are parallel to the upper surface of the heat source and the bottom surface of the heat sink; thus, the preferred directions of the heat flow though the PGS graphite is an anisotropic heat conducting properties for conducing heat therethrough along directions parallel to the upper surface of the heat source and the bottom surface of the heat sink. See also U.S. Pat. No. 7,303,005 issued Dec. 4, 2017 inventors Reis et al. See also U.S. patent Application Publication No. U.S. 2003/0116312 A1, publication date Jun. 26, 2003.
As is also known in the art, ultra-high conductivity thermally conductive structures such as diamond are often used; however these thermally conductive structures are costly and the low thermal expansion of diamond can create undesirable mechanical strain on the interface materials and/or require lower thermally-performing, stress absorbing materials to handle the thermal expansion mismatch from diamond to the typically higher expansion ceramics such as Si or SiC on the device side; and metals such as copper or aluminum for the thermally conductive base.
As is also known in the art, in many applications it is desirable to also minimize the amount of surface area used to mount MMiCs. For example, in some applications, MMICs are mounted on surfaces of stacked printed circuit boards and the printed circuit boards are electrically interconnected by vertical conducive vias passing vertically through the boards. In some applications, thermally conductive vias are used to remove heat from power generating components of the MMIC and pass such heat to a cold plate mounted to the bottom of the bottom one of the stacked printed circuit board while the MMICs and devices are arranged laterally thereby using valuable printed circuit board surface area.
As is also known in the art, three-dimensional molded interconnect devices have been reported in a paper entitled: PHOTONICS APPLIED MICROELECTRONICS PROCESSING: Laser direct structuring creates low-cost D integrated circuits by Doug Gries Oct. 10, 2010. Laser Focus World, Pennwell Corporation. See also “Three dimensional transmission lines and power divider circuits” by Ali Darwish; Amin Ezzeddine published Design & Technology of Integrated Systems in Nanoscal Era, 2009, DTIS '09. 4th International Conference on 6-9 Apr. 2009 and IEEE Xplore: 15 May 2009.
SUMMARY
In accordance with the present disclosure, a structure is provided, comprising: a three-dimensional, thermally conductive support structure comprising a plurality of surfaces; and, a circuit, comprising a plurality of heat generating electrical components disposed on a first portion of plurality of surfaces of the thermally conductive support structure and interconnected by microwave transmission lines disposed on a second portion of the plurality of surfaces of the thermally conductive support structure.
With such arrangement, surface area of the circuit in reduced by using a three-dimensional, thermally conductive support structure to remove heat generated by heat generating electrical components of the circuit.
In one embodiment, the thermally conductive material has anisotropic heat conducting properties for conducting heat therethrough along a preferred plane, the preferred plane intersecting the first portion of the plurality of surfaces of the, thermally conductive support structure.
In one embodiment, the thermally anisotropic material has a conductive material disposed on the plurality of surfaces.
In one embodiment, the conductive material provides a ground plane conductor for the microwave transmission lines.
In one embodiment, the heat generating electrical components have bottom surfaces thermally coupled and bonded to the conductive material.
In one embodiment, a heat sink is thermally coupled to one of the plurality of surfaces.
In one embodiment, a structure is provided, comprising: a substrate having an input microwaves transmission line and an output microwave transmission line; a three-dimensional, thermally conductive support structure comprising a plurality of surfaces; and, a circuit, comprising a plurality of heat generating electrical components disposed on different ones of the plurality of surfaces of the thermally conductive support structure and interconnected by microwave transmission lines disposed on different ones of the plurality of surfaces of the thermally conductive support structure; and wherein the circuit is electrically connected to the input microwaves transmission line and an output microwave transmission line.
In one embodiment, a cooling structure is provided, comprising: a heat spreader comprising thermally anisotropic material, such material having anisotropic heat conducting properties for conducting heat therethrough along a preferred plane; and, a circuit, comprising a plurality of heat generating electrical components disposed on different ones of a first portion of the plurality of surfaces of the heat spreader and interconnected by microwave transmission lines disposed on different ones of the plurality of surfaces of the heat spreader.
In one embodiment, the plurality of surfaces having the heat generating electrical components intersect the preferred plane of the thermally anisotropic material.
In one embodiment, the thermally anisotropic material has a conductive material disposed on the plurality of surfaces.
In one embodiment, the conductive material provides a ground plane conductor for the microwave transmission lines.
In one embodiment, the heat generating electrical components have bottom surface thermally coupled and bonded to the conductive material.
In one embodiment, the cooling si e includes a heat sink thermally coupled to one of the plurality of surfaces.
In one embodiment, a cooling structure is provided, comprising: a substrate having: a plurality of microwave transmission lines disposed on an upper surface of the substrate; and an opening passing through the substrate. A cold plate having a cavity formed in an upper surface of the cold plate is thermally coupled to a bottom surface of the substrate. A heat spreader is provided comprising thermally anisotropic material, such material having anisotropic heat conducting properties for conducting heat therethrough along a preferred plane is provided. The heat spreader has a lower portion passing through the opening onto a bottom surface of the cavity, A circuit is disposed on an upper portion of the heat spreader, the circuit comprising a plurality of heat generating electrical components disposed on different ones of a first portion of a plurality of surfaces of the heat spreader and interconnected by microwave transmission lines disposed on a second portion of the plurality of surfaces of the heat spreader, the preferred plane intersecting the first portion of a plurality of surfaces of the heat spreader.
In one embodiment, a substrate is provided having an input microwaves transmission line and an output microwave transmission line and wherein the circuit is electrically connected to the input microwaves transmission line and an output microwave transmission line.
The details of one or more embodiments of the disclosure are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the disclosure will be apparent from the description and drawings, and from the claims.
BRIEF DESCRIPTION OF DRAWINGS
FIGS. 1A-1C are cross sectional diagrammatical sketches of Monolithic Integrated Circuit (MMIC) cooling structures according to the PRIOR ART;
FIG. 1D is a cross sectional diagrammatical sketch of a cooling system using a Pyrolytic Graphite Sheets (PGS) graphite heat spreader according to the PRIOR ART;
FIGS. 2A-2D are simplified, diagrammatical, perspective sketches of a cooling structure according to the disclosure;
FIG. 2A′ is an enlarged portion of the cooling structure shown in FIG. 2A, such portion being enclosed by the arrow labelled 2A′-2A′ in FIG. 2A, according to the disclosure;
FIG. 3A is a schematic block diagram of a circuit formed on a thermal heat spreader of the cooling structure of FIGS. 2A-2D according to the disclosure;
FIG. 3B is a simplified, diagrammatical sketch the cooling structure of FIGS. 2A-2D according to the disclosure;
FIG. 4 is an exploded, perspective diagrammatical sketch of the thermal heat spreader of FIGS. 3A and 3B, with portions of one of the e elements thereof being partially broken away to show a portion of a bottom surface of such element of the thermal heat spreader of the cooling structure of FIGS. 2A-2D according to the disclosure;
FIG. 5 is an exploded, diagrammatical perspective view sketch, of the cooling structure of FIGS. 2A-2D according to the disclosure;
FIGS. 6A-6D are simplified, side elevation views of the cooling structure of FIGS. 2A-2D according to the disclosure showing heat flow through the cooling structure of FIGS. 2A-2D according to the disclosure;
FIGS. 7A and 7B together is a flow diagrams of the process used to form the cooling structure of FIGS. 2A-2D according to the disclosure;
FIG. 8 through FIG. 12D are diagrammatical sketches useful in understand the process used to form the cooling structure of FIGS. 2A-2D;
FIGS. 13A and 13B are diagrammatical, cross-sectional sketches of a portion of the cooling structure of FIGS. 2A-2D showing the process used to electrically interconnect a microwave transmission line of the heat spreader of FIG. 4 with an exemplary one of an electrical component, partially broken, attached to a side of the heat spreader at various steps in such process according to the disclosure;
FIG. 14 is schematic block diagram of an H-bridge circuit adapted for configuration on four sides of a heat spreader according to the disclosure; and
FIGS. 14A and 14B are simplified, diagrammatical, perspective sketches of a cooling structure according to the disclosure.
Like reference symbols in the various drawings indicate like elements.
DETAILED DESCRIPTION
Referring now to FIGS. 2A-2D, 3A and 3B and FIG. 5, a cooling structure 10 for cooling active, heat generating electrical components, here for example, a pair of Field Effect Transistor (FET) MMIC power amplifiers 12 a, 12 b connected between passive circuits, or electrical components, here for example, a power splitter 14 and a power combiner 16, by microwave transmission lines 17 a, 17 b, respectively, and microwave transmission lines 17 c, 17 d, respectively, as shown, to form a portion of the electrical circuit 18, as shown in FIG. 3. The MMIC power amplifiers 12 a, 12 b, power splitter 14, power combiner 16 and microwave transmission lines 17 a, 17 b, 17 c and 17 d are disposed on a heat spreader 24, to be described and shown in more detail in FIG. 4. It is to be noted here, however, that the pair of MMIC power amplifiers 12 a, 12 b are thermally coupled to a heatsink/cold plate 19 of the cooling structure 10 through a thermally coupled heat spreader 24 to be described in more detail in connection with FIG. 4.
More particularly, referring again to FIGS. 2A and 2B, the power splitter 14 is a conventional four-port power splitter, disposed on. SIDE 1 of the heat spreader 24, for having: one port fed by an RF input signal on transmission line 17 e, a second port connected to conventional matched impedance terminator 20 a, disposed on SIDE 1 of the heat spreader 24, through microwave transmission line 17 f; and a pair of output ports, each one being coupled to a corresponding one of a pair of the pair of MMIC power amplifiers 12 a, 12 b, disposed on opposites SIDE 2 and SIDE 4, respectively, of the heat spreader 24, through the pair of microwave transmission lines 17 a, 17 b, respectively, as shown. The outputs of each one of the MMIC power amplifiers 12 a, 12 b is coupled as inputs to the conventional four-port power combiner 16, disposed on SIDE 3 of the heat spreader 24, here a conventional four-port power combiner 16 (here also disposed on the heat spreader 24), having a pair of output ports through the microwave transmission lines 17 c, 17 d, respectively, as shown; one of the pair of output ports providing an RF output signal on microwave transmission line 17 g and the other being connected to a conventional matched terminator 20 b, disposed on SIDE 3 of the heat spreader 24, through microwave transmission line 17 h, as shown. Here the microwave transmission lines 17 a-17 h are microstrip transmission lines. Referring now to FIG. 5, it is noted that a bottom portion of the heat spreader 24 passes through an opening 29 in a printed circuit board 13 having: a dielectric substrate 22 and a ground plane conductor 23 on a bottom surface of the substrate 22. The printed circuit board 13 has formed on the upper surface thereof: a transmission line 17 e′ which is connected to a microwave transmission line 17 e″ formed on side 1 of the heat spreader 24, the transmission line 17 e′ and connected transmission line 17 e″ forming the input transmission line 17 e, and a transmission line 17 g′ which connects to a microwave transmission line 17 g″ formed on side 3 of the heat spreader 24, the transmission line 17 g′ and connected transmission line 17 g″ forming the input transmission line 17 g.
As shown more clearly in FIG. 5, the bottom portion of the heat spreader 24 passes through the opening 29 in the printed circuit board 13 onto a bottom surface 31 of a cavity 15 formed an portion of an upper surface 33 of a cold plate 19. A suitable thermal interface material (TIM) such as solder or thermally conductive adhesive 53 (FIGS. 2A, 2A′) is used to bond the upper surface 33 of the cold plate to the ground plane conductor 23 and the bottom surface of the heat spreader 24 and lower portions of the sidewalls to the heat spreader 24 to the sidewalls and bottom surface of the of the cavity 15, as shown in FIG. 2A′ The microstrip transmission lines 17 e and 17 g′, here microstrip transmission lines, are formed on the printed circuit board 13 by strip conductors 21 a disposed on portions of the upper surface of the dielectric substrate 22 and a ground plane conductor 23 disposed on the bottom surface of the dielectric substrate 22.
The heat spreader 24, here in this example, is a three-dimensional, thermally conductive support structure, multi-sided, here in this example, a six-sided structure, and is shown in more detail in FIG. 4 having a six-sided thermally anisotropic material 28, here for example pyrolytic graphite, having basal planes, indicated by dashed lines 30 disposed, in this example, in the Y-Z plane, that is, in this example, perpendicular to the upper surface 32 and the bottom surface 34 of the thermally anisotropic material 28. Thus, heat spreader 24 has anisotropic heat conducting properties for conducting heat therethrough along preferred planes (the basal planes 30). Here, in this example, the four vertical sides (Side 1, Side 2, Side 3 and Side 4) of the heat spreader 24, and the thermally anisotropic material 28 are rectangular is shape, here longer along the Z-axis than along either the X-axis or Y-axis. It should be understood that other shapes may be used, for example, they may have more or less than four sides, further, the bottom portion of the heat spreader 24, and the thermally anisotropic material 28 may be tapered. Further, as will be described in more detail below, the basal planes 30 intersect the bottom surface having the ground plane 51 of the heat generating MMIC power amplifiers 12 a, 12 b, here at ninety degree angles. It should be noted that while, in this example, the upper, or top, and lower, or bottom, surfaces 32, 34 of the thermally anisotropic material 28, are in the X-Y plane, the basal planes 30 may be in the X-Z plane, or one portion of the basal planes may be in the Y-Z plane and another portion may be in the X-Z plane.
The heat spreader 24 includes a thermally and electrically conductive material 36, here for example a metal, such as copper, serves as an encasing material, sometimes referred to herein as an encapsulation material 36, to encase all six outer surfaces (top, bottom and four sides) of the thermally anisotropic material 28. More particularly, the six outer surface of the thermally anisotropic material 28 are brazed to the thermally conductive material 36 with a suitable brazing material 38, here for example, CuSil an alloy of 72% silver and 28% copper (±1%) marketed by Morgan. Advanced Materials, Quadrant 55-57 High Street Windsor Berkshire, United Kingdom, SL4 1LP; a eutectic alloy primarily used for vacuum brazing. In another method of attachment, no external bonding agent is used between thermally anisotropic material 28 and thermally conductive material 36; for example using; heat and pressure, such as thereto-compression bonding or hot isostatic pressing, for example, Thus, the thermally conductive material 36 is an encapsulating material used to encapsulate the thermally anisotropic material 28 and is sometimes also referred to herein as encapsulation material 36.
In addition, all six outer surfaces do not have to be made out of the same encapsulation material 36. In one example, the surface of the encapsulation material 36 in contact with the MIMIC power amplifiers 12 a, 12 b can be made out of a high-thermal conductivity, but low CTE metal, such as Tungsten (4 PPM/° C.), Molybdenum (5.5 PPM/° C.), an alloy of Copper-Tungsten (5-10 PPM/° C.), an alloy of Copper-Molybdneum (6-10 PPM/° C.), or other such materials. In another example, this surface of material 36 in contact with the MMIC power amplifiers 12 a, 12 b can be made out of a ceramic, for example, Aluminum-Nitride (4.5 PPM/° C.), or Silicon Nitride (3.5 PPM/° C.), or others, which also have high thermal conductivity and a lower GTE. In doing so, an attachment surface, that is, the surface of encapsulation material 36 in contact with the MMIC power amplifiers 12 a, 12 b has a lower GTE, as compared to metal like Copper (18 PPM/° C.). Since the MMIC power amplifiers 12 a, 12 b, here have a substrate 50 (FIGS. 6C, 6D) made of, for example, Silicon Carbide, which has a lower CTE (2.8 PPM/° C.), the use of a high thermal conductivity with low CTE material on the top surface of encapsulation material 36 provides good thermal transport with improved CTE matching between the substrate 50 of the MMIC power amplifier 12 a, 12 b and the underlying heat spreader structure 24. A higher degree of CTE matching between the substrate 50 of the MMIC power amplifier 12 a, 12 b and the underlying heat spreader structure 24, thus achieved, reduces thermal-induced stresses in the substrate 50 of the MMIC power amplifier 12 a, 12 b when the cooling structure 10 is exposed to temperature excursions during operation. Thus, improved GTE matching improves the mechanical reliability of the cooling structure 10 by lowering them tab-induced stresses. Better degree of GTE matching thus achieved, also helps increase the choice of materials available to be used for the Thermal interface Materials (TIM) (e.g. solder), here layer 48 a, (FIGS. 6C and 6D) and to be described in more detail in connection with FIGS. 9A through 12D used to attach a ground plane 51 (FIGS. 6C and 6D) on the bottom of the substrate 50 of the MMIC power amplifier 12 a, 12 b to the heat spreader 24 because TIM layer 43 a stresses are lowered. This further improves thermal transfer from the substrate 50 of the MMIC power amplifier 12 a, 12 b into cold plate/heat sink 19 through TIM layer 48 and heat spreader 24. For example, if the CTE mismatch between the substrate 50 of the MMIC power amplifier 12 a, 12 b and the top surface of the heat spreader 24, more particularly the encapsulating material 36, was higher, only a certain category of materials could be used for TIM layer 48 a because, being disposed between the substrate 50 of the MMIC power amplifier 12 a, 12 b and the surfaces of the encapsulation material 36 of heat spreader 24, thermally coupled to the MMIC power amplifier 12 a, 12 b they would now be subjected to higher thermal-induced stresses. With better CTE matching between substrate 50 of the MMIC power amplifier 12 a, 12 b and the heat spreader 24, a larger number of thermally higher performing TIM materials become available as options. In this example, the encapsulation layer material 36, can be of Copper (18 PPM/° C.) and can be perfectly CTE-matched to the heat sink/cold plate 19 also made of copper. Thus, improved CTE matching is achieved on all sides of the spreader 24 by employing a combination of encapsulation materials rather than one single material. It is also possible to employ different materials for all or some of the remaining sides, as dictated by the CTE matching and thermal transfer needs of a given application. Thus all or any of the six encapsulating sides can be made out of a metal or a non-metal, as noted above. If non-metal then the added step of writing the ground plane precedes writing the dielectric. The power splitter 14 and power combiner 16 are also bonded to the heat spreader 24 using a TIM e layer 48 b (FIGS. 6A and 6B). Likewise the terminators 20 a, 20 b are also bonded to the heat spreader 24 using a TIM layer 48 c (FIGS. 6A and 6B). As noted above, here the microwave transmission lines 17 a-17 g arc here microstrip transmission lines with portions of such lines being bonded to the heat spreader. It is noted that to provide CTE matching the TIM layer 48 a, 48 b and 48 c may be different bonding material CTEs. It is noted that the basal planes 30 are parallel to sides 2 and 4 and perpendicular to sides 1 and 3 and hence perpendicular to the bottom surfaces of the power amplifiers 12 a and 12 b. The heat low from the power amplifiers 12 a, 12 b to the heat sink/cold plate 19 is shown by the arrows 61 in FIGS. 6A-6D. It is noted that a device region R1 (reference FIG. 2) is disposed on the upper surface of substrate 50, such region R having therein active devices, here, for example, FETs, passive devices, such as, for example, resistors, capacitors and inductors, and interconnecting microwave transmission lines arranged in any conventional manner to form the pair of the Field Effect Transistor (FET) MMIC power amplifiers 12 a, 12 b. It is also noted that the power splitter 14 and power combiner 16 components have passive device regions R2 (reference FIG. 2) having for example, microwave transmission lines arranged to form such power splitter 14 and power combiner 16 in any conventional manner. Likewise, the terminators 20 a, 20 b have passive devices, such as resistors, arranged in any conventional manner to provide proper impedance machining termination components.
As described above, the bottom portion of the heat spreader 24 passes through an opening 29 in the printed circuit board 13 onto the bottom surface of a cavity 15 formed a portion of an upper surface of a cold plate 19. Thus, as shown in FIG. 2A′, a small gap 60 is left between the ends of the microwave transmission lines 17 e′, 17 g′ on the printed circuit board 13 and the bottom portion of the heat spreader 24. This gap 60 is filled by injection into the upper portion of the gap 60 with an elastic dielectric material 63, such as a silicone material, as shown. Next bridging strip conductor 64 is printed onto the dielectric material 63 to electrically interconnect the strip conductor 21 a on the printed circuit board 13 of the microwave transmission lines 17 e′, 17 g′ of the dielectric substrate 22 to the strip conductor 21 b (FIG. 5) of the microwave transmission lines 17 e″, 17 g″ on the heat spreader 24 and thereby form transmission line 17 e, 17 g as described above.
It is noted that the conductive encapsulation material 36 is electrically and thermally connected to the heat sink 197 and therefore to the ground plane conductor 23 of the printed circuit board 13. Thus, other passive elements in addition to directional couplers and power divider/combiners, such as resistors, capacitors, and inductors, for example, may be formed on the sides of the heat spreader 24 using dielectric material and conductive material arranged appropriately to form such passive devices. For example, a resistive material may then be printed over the dielectric material printed and cured on the conductive encapsulation material 36 in a region where a resistor is to be formed with one end of the resistive material being connected to a strip conductor of a microwave transmission line and the other end being connected to a printed strip, conductor that passes over the edge of the dielectric material to the conductive encapsulation material 36, which as noted above, is electrically connected to the ground plane conductor 23. For example, the terminators 20 a, 20 b may be such a resistor having an impedance to provide a matched load for the electrical circuit 18 (FIGS. 3A, 3B).
Referring now to FIG. 7, a flow diagram of the process used to form the cooling structure 10, FIGS. 2A-2D is shown. It is first noted that the process may be performed using computer controlled Additive Manufacturing (AM) or 3D printed processes. The heat spreader 24 is formed (FIG. 8), Step 100. The MMIC power amplifiers 12 a, 12 b, splitter 14 and combiner 16 are attached to sides of the formed heat spreader 24 with TIM 48 a with the ground plane conductors 51 as described above in connection with FIGS. 6C and 6D (FIGS. 9A-9D) Step 200. It is again noted that the ground plane conductors 51 of the MMIC power amplifiers 12 a, 12 b are perpendicular to the basal planes 30 while the ground plane conductors 51 of the splitter 14 and combiner 16 are parallel to the basal planes 30, see FIGS. 6A-6D, A dielectric material 71 is printed and then cured over the heat spreader 24 in regions exposed by the attached MMIC power amplifiers 12 a, 12 b, splitter 14, combiner 16 and terminators 20 a, 20 b and also leaving the lower and bottom portions of the heat spreader 24 uncovered thereby leaving the encapsulating material 36 exposed on the lower and bottom portions of the heat spreader 24 (FIGS. 10A-10D), Step 300. A dielectric material 73 is printed and then cure to till any seam, or small space 57 (FIG. 13A), that may exist between the cured dielectric material 71 and the components: the MMIC power amplifiers 12 a, 12 b; splitter 14; and combiner 16, and terminators 20 a, 20 b, as shown in FIGS. 13A and 13 B for an exemplary one of the components, here for example, the MMIC power amplifier 12 a, (FIGS. 11A-11D). Step 400. Strip conductors 21 b (FIGS. 5, 12A-12D) are printed and cured on the dielectric materials 71 and 73 to form the microwave transmission lines 17 a-17 h and 17 g″ and 17 h″ to interconnect the components thereby forming the portion of the circuit 18 (FIG. 3A) on the upper portion 91 (FIGS. 5, 12A-12D) of the sides 14 of heat spreader 24, Step 500. The dielectric material '73 has a low Young's modulus (an elastic dielectric material such as, for example, silicone). The Young's modulus is selected to enable expansion and contraction of such elements over the temperature operating and storage range without resulting in breakage of electrical interconnect passing over such gap filling materials.
Form the input and output microwave transmission lines interconnects 17 e′, 17 g′ are on printed circuit board 13, such printed circuit board 13 having the opening 29 passing through it for receiving the lower portion 92 (FIGS. 5, 12A-12D) of the heat spreader 24, Step 600.
The cold plate 19 is formed with the cavity 15 in the upper surface, Step 700.
A thermal interface material (TIM) 53, here for example solder, is applied to the upper surface of the cold plate 19 and to the sidewalls and bottom of cavity 15 in cold plate 19 (FIG. 2A′), Step 800. The lower portion 92 (FIGS. 5, 12A-12D) of the heat spreader 24 is inserted through the opening 29 in the printed circuit board 13 onto the bottom surface of the cavity 15 in the cold plate 19. It is noted in FIG. 2A′ that vertical edges of the opening 29 in the printed circuit board 13 are spaced from the encapsulating material 36 on the sides of the lower portions 92 of the heat spreader 24 thereby leaving a gap 60 between the vertical edges of the printed circuit board 13 and the encapsulating material 36, Step 900. It is noted in FIG. 2A′ that the thermal interface material (TIM) 53 is applied below the level of strip conductors of the input and output microwave transmission lines interconnects 17 e′, 17 g′ and the TIM 53 is used to bond the encapsulating material 36 to the sidewalls and bottom surface of the heat spreader 24 to the sidewalls and bottom of the cavity 15 and also bond the printed circuit board 13 (the ground plane conductor 23 (FIG. 2A′) to the upper surface of the cold plate 19 by reflow or curing, Step 1000. A dielectric material 63 (FIG. 2A′) having a low Young's modulus (an elastic dielectric material such as, for example, silicone) is printed and then cured in the gap 60 above the thermal interface material (TIM) 53 (FIG. 2A′), Step 1100. The Young' s modulus is selected to enable expansion and contraction of such elements over the temperature operating and storage range without resulting in breakage of electrical interconnect passing over such seam or bridge gap filling materials. Bridging strip conductors 64 are printed and then cured over portions of strip conductors of the microwave transmission lines 17 e′, 17 g′ on dielectric substrate 22 and cured over portions of strip conductors of the microwave transmission lines 17 e″, 17 g″ on the dielectric material 71 to electrically interconnect the input and output microwave transmission lines 17 e, 17 g on the printed circuit board 13 with the microwave transmission lines 17 e, 17 g on the heat spreader 24 and thereby complete the circuit 18, Step 1200.
It should be understood that other sequences and procedures may be used to maximize yield and performance. Further, it should be understood that the Coefficients of Thermal Expansions (CTEs) of bonding material used should be selected to Match as closely as possible the CTEs of the elements being bonded and still have sufficient bonding strength over the temperature operating and storage range. Likewise, dielectric filling materials used to fill gaps and seams between elements should have sufficient elasticity (Young's modulus) to enable expansion and contraction of such elements over the temperature operating and storage range without resulting in breakage of electrical interconnect passing over such seam or bridge gap filling materials. It should be noted that the transmissions and splitter, combiner or other matching networks and accompanying bias networks may be realized on the structure 24 in a number of ways. Dielectric materials may be additively printed using paste or filament and the strip conductors on the heat spreader 24 may be printed using AM or 3D printing. Alternately, the circuit may be formed on a flexible, conformable substrate and then bonded to the structure 24 with a suitable TIM. The microwave transmission lines 17 a-17 h may be formed using, for example, computer controlled Additive Manufacturing (AM) or 3D printing, for example. In addition, while the example has described microwave transmission lines, bias control lines including lines +V, −V (FIGS. 2A-2D) for supplying voltages to the MMIC amplifiers 12 a, 12 b may also be printed on dielectric layer 71 on the same or additional layers of dielectric 71.
A number of embodiments of the disclosure have been described. Nevertheless, it will be understood that various modifications may be made without departing from the spirit and scope of the disclosure. For example, while the terminators 20 a, 20 b have been shown and described as being on sides 1 and 3, respectively, they may be on sides 2 and 4, respectively, and with transmission lines 17 f and 17 h, respectively having portions on sides 1 and 4, and sides 3 and 2, respectively. Still further the sides having the heat generating elements of the circuit need not be disposed in planes that are perpendicular (ninety degrees) to bottom surface of the substrate of the power MMIC amplifiers 12 a, 12 b but may be in planes that intersect the bottom surface of the substrate of the heat generating elements heat generating elements of the circuit at other angles than ninety degrees, such as, for example, 45 degrees or 30 degrees. Still further, while the splitter 14 and combiner 16 are described above as being individual passive components that are bonded to the heat spreader 24 they may be formed with strip conductors in the same manner as the transmissions lines on the dielectric material 71 formed over the portion of the surface of the heat spreader 24 where such splitter 14 and combiner 16 individual components are now located. Further, electrical interconnections between strip conductors on the heat spreader 24 and components on the heat spreader 24 may be made with ribbon or wire bonds. Further, the disclosure may be used with other applications than to splitting and combining networks and in power applications such as, for example, H-bridge designs, for example, see FIGS. 14, 14A and 14B where Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) Q1-Q4 are connected to diodes D1-D4, as shown in FIG. 14. Here it is noted that the MOSFETs Q1-Q2 and diodes D1-D2 are bonded and thermally coupled to side 2 of the spreader 24 and that the MOSFETs Q3-Q4 and diodes D3-D3 are bonded and thermally coupled to opposite side 4 spreader 24, such sides 2 and 4 being perpendicular to the basal planes 30 of the spreader 24, FIG. 4, FIGS. 14, 14A and 14B.
Accordingly, other embodiments are within the scope of the following claims.

Claims (5)

What is claimed is:
1. A cooling structure, comprising:
a substrate having: a plurality of microwave transmission lines disposed on an upper surface of the substrate; and an opening passing through the substrate;
a cold plate having a cavity formed in an upper surface of the cold plate, the upper surface being thermally coupled to a bottom surface of the substrate;
a heat spreader comprising thermally anisotropic material, such material having anisotropic heat conducting properties for conducting heat therethrough along a preferred plane, the heat spreader having a lower portion passing through the opening onto a bottom surface of the cavity; and,
a circuit, disposed on an upper portion of the heat spreader, the circuit comprising a plurality of heat generating electrical components disposed on different ones of a first portion of a plurality of surfaces of the heat spreader and interconnected by microwave transmission lines disposed on a second portion of the plurality of surfaces of the heat spreader, the preferred plane intersecting the first portion of a plurality of surfaces of the heat spreader.
2. The cooling structure recited in claim 1 wherein the thermally anisotropic material has a conductive material disposed on the plurality of surfaces.
3. The cooling structure recited in claim 2 wherein the conductive material provides a ground plane conductor for the microwave transmission lines.
4. The cooling structure recited in claim 3 wherein the heat generating electrical components have bottom surface thermally coupled and bonded to the conductive material.
5. The cooling structure recited in claim 1 wherein the substrate has an input microwaves transmission line and an output microwave transmission line and wherein the circuit is electrically connected to the input microwaves transmission line and an output microwave transmission line.
US15/948,404 2018-04-09 2018-04-09 Circuit support and cooling structure Active 2038-09-06 US10785863B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US15/948,404 US10785863B2 (en) 2018-04-09 2018-04-09 Circuit support and cooling structure
PL19717033.5T PL3776648T3 (en) 2018-04-09 2019-03-26 Circuit support and cooling structure
SG11202009487QA SG11202009487QA (en) 2018-04-09 2019-03-26 Circuit support and cooling structure
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US10916524B2 (en) * 2016-12-29 2021-02-09 Intel Corporation Stacked dice systems

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* Cited by examiner, † Cited by third party
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Citations (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3156091A (en) 1961-07-19 1964-11-10 Curtiss Wright Corp Multi-layer anisotropic heat shield construction
US3980105A (en) 1974-07-10 1976-09-14 Hitco Laminated article comprising pyrolytic graphite and a composite substrate therefor
US4057610A (en) 1975-07-25 1977-11-08 Monsanto Company Hose reinforced with discontinuous fibers oriented in the radial direction
US4627472A (en) 1978-07-31 1986-12-09 Monsanton Company Hose reinforced with discontinuous fibers oriented in the radial direction
US4672472A (en) 1984-02-13 1987-06-09 Victor Company Of Japan, Ltd. Playback apparatus for audiovisual disc records
US5241450A (en) * 1992-03-13 1993-08-31 The United States Of America As Represented By The United States Department Of Energy Three dimensional, multi-chip module
US5434362A (en) * 1994-09-06 1995-07-18 Motorola, Inc. Flexible circuit board assembly and method
US5545924A (en) * 1993-08-05 1996-08-13 Honeywell Inc. Three dimensional package for monolithic microwave/millimeterwave integrated circuits
US6075701A (en) 1999-05-14 2000-06-13 Hughes Electronics Corporation Electronic structure having an embedded pyrolytic graphite heat sink material
JP2001267441A (en) 2000-03-15 2001-09-28 Kyocera Corp Package for containing semiconductor element
US20020006523A1 (en) 2000-07-07 2002-01-17 Obeshaw Dale Francis Structural members containing vibration damping mechanisms and methods for making the same
US6387462B1 (en) 1999-12-10 2002-05-14 Ucar Graph-Tech Inc. Thermal insulating device for high temperature reactors and furnaces which utilize highly active chemical gases
US20020167800A1 (en) 2001-05-02 2002-11-14 Smalc Martin D. Radial Finned Heat Sink
US20030042153A1 (en) 2001-08-31 2003-03-06 Farrar Paul A. Multiple chip stack structure and cooling system
US20030116312A1 (en) 2001-12-13 2003-06-26 Krassowski Daniel W. Heat dissipating component using high conducting inserts
US6674347B1 (en) 1999-03-23 2004-01-06 Nec Corporation Multi-layer substrate suppressing an unwanted transmission mode
US6717813B1 (en) 2003-04-14 2004-04-06 Thermal Corp. Heat dissipation unit with direct contact heat pipe
US7005584B2 (en) * 2004-02-13 2006-02-28 Honeywell International Inc. Compact navigation device assembly
US20060096740A1 (en) 2004-11-10 2006-05-11 Wen-Chun Zheng Nearly isothermal heat pipe heat sink and process for making the same
US20070053168A1 (en) 2004-01-21 2007-03-08 General Electric Company Advanced heat sinks and thermal spreaders
EP1783833A2 (en) 2005-11-04 2007-05-09 Advanced Energy Technology Inc. Heat Spreaders with Vias
US20070115076A1 (en) * 2005-11-21 2007-05-24 Harris Corporation High density three-dimensional RF / microwave switch architecture
US20070262836A1 (en) * 2006-04-26 2007-11-15 Ems Technologies, Inc. Planar mixed-signal circuit board
US20090066420A1 (en) * 2007-09-12 2009-03-12 Viasat, Inc. Solid state power amplifier with multi-planar mmic modules
US20090091892A1 (en) * 2007-09-26 2009-04-09 Rohm Co., Ltd. Semiconductor Device
US20100177796A1 (en) 2009-01-09 2010-07-15 Newport Corporation Laser device and heat sink with core to manage stress due to thermal expansion
WO2011008467A1 (en) 2009-07-14 2011-01-20 Specialty Minerals (Michigan) Inc. Anisotropic thermal conduction element and manufacturing method
US20110030924A1 (en) 2003-09-12 2011-02-10 The Furukawa Electric Co., Ltd. Heat sink with heat pipes and method for manufacturing the same
US20120063097A1 (en) * 2010-09-10 2012-03-15 Raytheon Company Monolithic microwave integrated circuit
DE102011078674A1 (en) 2011-07-05 2013-01-10 Siemens Aktiengesellschaft cooling component
US20130092354A1 (en) 2011-10-18 2013-04-18 Thermal Corp. Heat pipe having a wick with a hybrid profile
US20130208434A1 (en) * 2012-02-10 2013-08-15 Raytheon Company FLIP-CHIP MOUNTED MICROSTRIP MONOLITHIC MICROWAVE INTEGRATED CIRCUITS (MMICs)
US20130271905A1 (en) * 2002-10-22 2013-10-17 Jason A. Sullivan Systems and methods for providing dynamic computing systems
US20150062802A1 (en) 2013-09-05 2015-03-05 Dell Products, L.P. Heat pipe assemblies
US9093442B1 (en) * 2013-03-15 2015-07-28 Lockheed Martin Corporation Apparatus and method for achieving wideband RF performance and low junction to case thermal resistance in non-flip bump RFIC configuration
US9318450B1 (en) 2014-11-24 2016-04-19 Raytheon Company Patterned conductive epoxy heat-sink attachment in a monolithic microwave integrated circuit (MMIC)
US20160316570A1 (en) * 2014-01-02 2016-10-27 Koninklijke Philips N.V. Method for manufacturing a non-planar printed circuit board assembly
US20170042058A1 (en) * 2015-08-03 2017-02-09 Apple Inc. Parallel heat spreader
US20170100907A1 (en) 2015-10-09 2017-04-13 Raytheon Company Anisotropic thermal conduit
US20170284647A1 (en) * 2016-03-31 2017-10-05 Osram Sylvania Inc. Flexible interconnection between substrates and a multi-dimensional light engine using the same
US20170325332A1 (en) * 2016-05-04 2017-11-09 Northrop Grumman Systems Corporation Bridging electronic inter-connector and corresponding connection method
US9978698B1 (en) * 2017-01-25 2018-05-22 Raytheon Company Interconnect structure for electrical connecting a pair of microwave transmission lines formed on a pair of spaced structure members
US20190295918A1 (en) 2018-03-26 2019-09-26 Raytheon Company Monolithic microwave integrated circuit (mmic) cooling structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020157819A1 (en) * 2001-04-04 2002-10-31 Julian Norley Graphite-based thermal dissipation component
KR100586698B1 (en) 2003-12-23 2006-06-08 삼성전자주식회사 Semiconductor Module having semiconductor chip package which is vertically mounted on module board
JP2010129806A (en) 2008-11-28 2010-06-10 Mitsubishi Electric Corp Power semiconductor device and process of manufacturing the same
US10347559B2 (en) 2011-03-16 2019-07-09 Momentive Performance Materials Inc. High thermal conductivity/low coefficient of thermal expansion composites

Patent Citations (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3156091A (en) 1961-07-19 1964-11-10 Curtiss Wright Corp Multi-layer anisotropic heat shield construction
US3980105A (en) 1974-07-10 1976-09-14 Hitco Laminated article comprising pyrolytic graphite and a composite substrate therefor
US4057610A (en) 1975-07-25 1977-11-08 Monsanto Company Hose reinforced with discontinuous fibers oriented in the radial direction
US4627472A (en) 1978-07-31 1986-12-09 Monsanton Company Hose reinforced with discontinuous fibers oriented in the radial direction
US4672472A (en) 1984-02-13 1987-06-09 Victor Company Of Japan, Ltd. Playback apparatus for audiovisual disc records
US5241450A (en) * 1992-03-13 1993-08-31 The United States Of America As Represented By The United States Department Of Energy Three dimensional, multi-chip module
US5545924A (en) * 1993-08-05 1996-08-13 Honeywell Inc. Three dimensional package for monolithic microwave/millimeterwave integrated circuits
US5434362A (en) * 1994-09-06 1995-07-18 Motorola, Inc. Flexible circuit board assembly and method
US6674347B1 (en) 1999-03-23 2004-01-06 Nec Corporation Multi-layer substrate suppressing an unwanted transmission mode
US6075701A (en) 1999-05-14 2000-06-13 Hughes Electronics Corporation Electronic structure having an embedded pyrolytic graphite heat sink material
US6387462B1 (en) 1999-12-10 2002-05-14 Ucar Graph-Tech Inc. Thermal insulating device for high temperature reactors and furnaces which utilize highly active chemical gases
JP2001267441A (en) 2000-03-15 2001-09-28 Kyocera Corp Package for containing semiconductor element
US20020006523A1 (en) 2000-07-07 2002-01-17 Obeshaw Dale Francis Structural members containing vibration damping mechanisms and methods for making the same
US20020167800A1 (en) 2001-05-02 2002-11-14 Smalc Martin D. Radial Finned Heat Sink
US20030042153A1 (en) 2001-08-31 2003-03-06 Farrar Paul A. Multiple chip stack structure and cooling system
US20030116312A1 (en) 2001-12-13 2003-06-26 Krassowski Daniel W. Heat dissipating component using high conducting inserts
US20130271905A1 (en) * 2002-10-22 2013-10-17 Jason A. Sullivan Systems and methods for providing dynamic computing systems
US6717813B1 (en) 2003-04-14 2004-04-06 Thermal Corp. Heat dissipation unit with direct contact heat pipe
US20110030924A1 (en) 2003-09-12 2011-02-10 The Furukawa Electric Co., Ltd. Heat sink with heat pipes and method for manufacturing the same
US20070053168A1 (en) 2004-01-21 2007-03-08 General Electric Company Advanced heat sinks and thermal spreaders
US7005584B2 (en) * 2004-02-13 2006-02-28 Honeywell International Inc. Compact navigation device assembly
US20060096740A1 (en) 2004-11-10 2006-05-11 Wen-Chun Zheng Nearly isothermal heat pipe heat sink and process for making the same
US7303005B2 (en) 2005-11-04 2007-12-04 Graftech International Holdings Inc. Heat spreaders with vias
EP1783833A2 (en) 2005-11-04 2007-05-09 Advanced Energy Technology Inc. Heat Spreaders with Vias
US20070115076A1 (en) * 2005-11-21 2007-05-24 Harris Corporation High density three-dimensional RF / microwave switch architecture
US20070262836A1 (en) * 2006-04-26 2007-11-15 Ems Technologies, Inc. Planar mixed-signal circuit board
US20090066420A1 (en) * 2007-09-12 2009-03-12 Viasat, Inc. Solid state power amplifier with multi-planar mmic modules
US20090091892A1 (en) * 2007-09-26 2009-04-09 Rohm Co., Ltd. Semiconductor Device
US20100177796A1 (en) 2009-01-09 2010-07-15 Newport Corporation Laser device and heat sink with core to manage stress due to thermal expansion
WO2011008467A1 (en) 2009-07-14 2011-01-20 Specialty Minerals (Michigan) Inc. Anisotropic thermal conduction element and manufacturing method
US20120063097A1 (en) * 2010-09-10 2012-03-15 Raytheon Company Monolithic microwave integrated circuit
DE102011078674A1 (en) 2011-07-05 2013-01-10 Siemens Aktiengesellschaft cooling component
US20130092354A1 (en) 2011-10-18 2013-04-18 Thermal Corp. Heat pipe having a wick with a hybrid profile
US20130208434A1 (en) * 2012-02-10 2013-08-15 Raytheon Company FLIP-CHIP MOUNTED MICROSTRIP MONOLITHIC MICROWAVE INTEGRATED CIRCUITS (MMICs)
US9093442B1 (en) * 2013-03-15 2015-07-28 Lockheed Martin Corporation Apparatus and method for achieving wideband RF performance and low junction to case thermal resistance in non-flip bump RFIC configuration
US20150062802A1 (en) 2013-09-05 2015-03-05 Dell Products, L.P. Heat pipe assemblies
US20160316570A1 (en) * 2014-01-02 2016-10-27 Koninklijke Philips N.V. Method for manufacturing a non-planar printed circuit board assembly
US9318450B1 (en) 2014-11-24 2016-04-19 Raytheon Company Patterned conductive epoxy heat-sink attachment in a monolithic microwave integrated circuit (MMIC)
US20170042058A1 (en) * 2015-08-03 2017-02-09 Apple Inc. Parallel heat spreader
US20170100907A1 (en) 2015-10-09 2017-04-13 Raytheon Company Anisotropic thermal conduit
US9889624B2 (en) 2015-10-09 2018-02-13 Raytheon Company Anisotropic thermal conduit
US10232582B2 (en) 2015-10-09 2019-03-19 Raytheon Company Anisotropic thermal conduit
US20170284647A1 (en) * 2016-03-31 2017-10-05 Osram Sylvania Inc. Flexible interconnection between substrates and a multi-dimensional light engine using the same
US20170325332A1 (en) * 2016-05-04 2017-11-09 Northrop Grumman Systems Corporation Bridging electronic inter-connector and corresponding connection method
US9978698B1 (en) * 2017-01-25 2018-05-22 Raytheon Company Interconnect structure for electrical connecting a pair of microwave transmission lines formed on a pair of spaced structure members
US20190295918A1 (en) 2018-03-26 2019-09-26 Raytheon Company Monolithic microwave integrated circuit (mmic) cooling structure

Non-Patent Citations (13)

* Cited by examiner, † Cited by third party
Title
Darwish et al.; Three Dimensional Transmission Lines and Power Divider Circuits. Apr. 1, 2009; 8 pages.
Final Office Action dated Dec. 10, 2019 for U.S. Appl. No. 15/935,622, 15 pages.
Final Office Action dated Sep. 28, 2018 for U.S. Appl. No. 15/870,155; 10 Pages.
Gries; Photonics Applied: Microelectronics Processing: Laser direct structuring creates low-cost 3D integrated circuits. Oct. 10, 2010; 6 pages.
International Search Report dated Jul. 2, 2019 for International Application No. PCT/US2019/023988; 5 Pages.
Notification of Transmittal of the International Search Report and the Written Opinion of the ISA dated Jul. 2, 2019 for International Application No. PCT/US2019/023988; 1 Page.
PCT International Search Report and Written Opinion dated Jan. 9, 2017 for International Application No. PCT/US2016/054290; 9 pages.
PCT Invitation to Pay Additional Fees and Partial Search Report dated Oct. 18, 2019 for International Application No. PCT/US2019/016282; 16 Pages.
Supplemental Response to Final Office Action with RCE dated Dec. 13, 2019 for U.S. Appl. No. 15/935,622, 19 pages.
Tehrani et al.; Inkjet-Printed 3D Interconnects for Millimeter-Wave System-on-Package Solutions. 2016 IEEE MTT-S International Microwave Symposium (IMS), San Francisco, CA; Jan. 1, 2016; 4 pages.
Terminal Disclaimer and Response to Office Action dated Sep. 28, 2018 for U.S. Appl. No. 15/870,155, filed Oct. 4, 2018; 11 Pages.
Whelan, et al.; GaN Technology for Radars. CS MANTECH Conference, Apr. 23-26, 2012, Boston, Massachusetts, USA. 4 pages.
Written Opinion of the ISA dated Jul. 2, 2019 for International Application No. PCT/US2019/023988; 12 Pages.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10916524B2 (en) * 2016-12-29 2021-02-09 Intel Corporation Stacked dice systems

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