TWI421322B - Cutting tapes for semiconductor processing - Google Patents

Description

Cutting tape for semiconductor processing Field of invention

The present invention relates to a dicing tape suitable for holding a wafer when a semiconductor wafer is diced into a wafer, and the like, and more particularly to a dicing tape for semiconductor processing suitable for high-density semiconductor package processing.

Background of the invention

Conventionally, when a semiconductor wafer in which a circuit pattern is formed is separated into a wafer shape, that is, a so-called dicing process, a wafer is fixed by a pick-up method using a semiconductor processing tape. In this embodiment, the large-diameter wafer is cut into a wafer shape in a state of being attached to and fixed to the tape for semiconductor processing, and after being washed and dried, it is packaged by resin sealing after the pickup step.

In recent years, as one of the forms of miniaturization of semiconductor elements, each company has developed a flip chip type package having electrodes on the side of a pattern circuit. In the flip chip type package, the wafer level wafer size package (WLCSP) is a wafer processed before the end, and the polyimine coating, the Cu relocation wiring formation, the Cu pillar formation, and the resin are sequentially performed. After the encapsulation process of sealing, resin polishing, and terminal formation, the creator is finally cut into individual wafers, and is a package having the same size and wafer size.

In this way, the WLCSP in which the resin is sealed together is generally a semiconductor wafer bonded to a glass epoxy substrate or a lead frame, and the mold resin is packaged and molded, and then cured, and the cured product is pasted to the semiconductor. The processing is fixed with a tape and cut by a cutting blade. In the cutting step of the package, the load at the time of cutting is large. Further, the encapsulating resin contains a release agent, and its surface has a structure having minute projections. Thereby, the tape for semiconductor processing can firmly hold the package and use a soft adhesive to prevent the package from being splashed during cutting.

However, since the dicing blade is cut together with the tape, in the case of using such a softening agent, the adhesive layer of the tape may curl, and the curled tiny rubber ball may remain on the side of the independent package. Because of the small rubber balls remaining on the side surface of the package, after the package is picked up, the package adheres to the tray or the transfer tube during transportation, and there is a problem that peeling cannot occur.

As a measure for suppressing the rubber ball, it is disclosed that at least one of the monomer components is an alkyl (meth)acrylate, and the copolymer having the alkyl group as an alicyclic hydrocarbon group is a base polymer. The adhesive is a dicing tape formed on at least one side of a base film (Patent Document 1). This dicing tape is an adhesive tape which is considered to be excellent in the adhesion prevention of the side adhesive.

On the one hand, from the viewpoint of wafer retention at the time of cutting, the thickness of the adhesive layer is preferably as thick as possible. However, in the case of the conventional dicing tape described above, in the case where the thickness of the adhesive layer is thick, there is a case where residual glue is generated on the side of the package, and in fact, further improvement is desired.

On the other hand, in order to lose the adhesiveness of the microcapsules remaining on the side surface of the package, a method in which the semiconductor processing tape and the substrate together with the ring frame are placed in a heating furnace to cure the microgel after the dicing is known. however, In this case, if the heat resistance of the base material or the adhesive layer of the semiconductor processing tape is low, after the heating step, when the package is picked up, a large amount of the adhesive remains in the package bonded to the adhesive layer. The portion of the package laser mark on the resin surface (the back surface of the package) causes the problem that the laser mark printed on the package becomes unclear. Further, when the tape is peeled off from the annular frame, there is also a problem that the glue remains in the annular frame, and there is a problem in the reuse of the annular frame which should be reused.

Advanced technical literature Patent literature

Patent Document 1: Japanese Laid-Open Patent Publication No. 2007-100064

Summary of invention

Here, the present invention has been made in view of the problems of the conventional art as described above, and provides a dicing tape for semiconductor processing, which is characterized in that it is sufficiently maintained in the step of performing a dicing process on a semiconductor wafer. The adhesion of the wafer or the wafer to which it is cut, and after the package is cut, even if the tiny rubber ball is attached to the independently encapsulated package, the heat treatment step is not necessary, and it is not attached to the tray or The device, in addition, does not adhere to the device or the independent package is attached to each other when transported by the transport tube.

The inventors of the present invention have continuously conducted an effort to review the above-mentioned problems, and found that they have a special feature before and after irradiation with radiation. The dicing tape for semiconductor processing of the radiation-curable adhesive layer which fixes the adhesive strength and the probe adhesion peak intensity can obtain sufficient adhesiveness in holding a wafer, and even if a micro-adhesive ball adheres to an independent package In this case, the package can be transported without being attached to the tray or the transport tube, and thus the present invention has been completed.

That is, the present invention provides a dicing tape for semiconductor processing, characterized in that: (1) a dicing tape for semiconductor processing, which is used in a step of dicing a semiconductor package, characterized in that: A radiation-curable adhesive layer is formed on at least one side, and the adhesive layer is composed of a resin composition containing an acrylic polymer as a base polymer, and the thickness of the adhesive layer is 10 to 30 μm, and the adhesive is used. The adhesion of the layer to the radiation of SUS304 according to JIS Z0237 is 1.0 to 2.0 N/25 mm tape width at the 90° peel test, and the above-mentioned adhesive layer is irradiated with radiation under atmospheric gas conditions. the peak strength of adhesion probe 50 ~ 150mN / mm ^2; the sum (2) according to item 1 dicing tape semiconductor processing, wherein the adhesive layer with respect to adhesion of the radiation in accordance with JIS Z0237 before irradiation of SUS304 The tape width is 5.0~10.0N/25mm when the 90° peeling test is performed, and the adhesion peak intensity of the adhesive layer before the irradiation of the adhesive layer in the atmospheric gas environment is 250-75. 0mN / mm ^2; and (3), such as 1 or 2 of the semiconductor processing dicing tape, wherein the glass transition temperature of the resin constituting the adhesive layer of the composition of -30 ~ -10 ℃, the resin composition The base polymer described above contains methyl acrylate and 2-ethylhexyl acrylate as a monomer component; and (4) a dicing tape for semiconductor processing, which is used in the step of cutting a semiconductor package, and is characterized in that A radiation-curable adhesive layer is formed on at least one side of the material film, and the adhesive layer is composed of a resin composition containing an acrylic polymer as a base polymer, and the acrylic polymer contains methyl acrylate and acrylic acid. 2-ethylhexyl ester as a monomer component, the glass transition temperature of the resin composition is -30 to -11 ° C, the thickness of the adhesive layer is 10 to 30 μm; and the adhesive layer is relative to SUS304 according to JIS Z0237 the adhesion after irradiation radiation, during 90 ° peel test was 1.0 ~ 1.9N / 25mm width of the tape, adhesion to the peak intensity of the probe radiation after irradiation of the adhesive layer is 54 ~ 148mN / mm ^2, the adhesive The adhesion of the layer to the radiation of SUS304 according to JIS Z0237 is 5.3 to 9.7 N/25 mm tape width at the 90° peel test; and the probe adhesion peak intensity before the radiation of the adhesive layer is irradiated It is 253~723mN/mm ² .

The dicing tape for semiconductor processing according to the present invention is characterized in that a radiation-curable adhesive layer is formed on at least one side of a base film, and the adhesive layer is composed of a resin composition containing an acrylic polymer as a base polymer. Since it is constituted, it is excellent in reducing the contamination to a semiconductor wafer or a package. Further, by making the thickness of the adhesive layer 10 to 30 μm, it is possible to prevent peeling of the wafer or residual glue on the side of the package while cutting, while sufficiently maintaining the wafer. Further, according to the adhesion of the adhesive layer to the radiation of SUS304 according to JIS Z0237, the tape width is 1.0 to 2.0 N/25 mm at the 90 peel test, and the scattering of the surrounding wafer during pick-up can be suppressed. , or the package is detached from the tape when shipped. Further, the probe adhesion peak intensity after the irradiation of the adhesive layer under the conditions of the atmospheric gas atmosphere is 50 to 150 mN/mm ² , and even if the package produces rubber balls, the adhesion of the package can be suppressed. Tray or transport tube.

1‧‧‧Cleaning tape for semiconductor processing

3‧‧‧Substrate film

5‧‧‧Adhesive layer

7‧‧‧ release paper

Fig. 1 is a schematic cross-sectional view showing a dicing tape for semiconductor processing of the present invention.

Form for implementing the invention

Hereinafter, the semiconductor processing for the present invention will be described with reference to the drawings. A suitable embodiment of the dicing tape.

The dicing tape 1 for semiconductor processing of the present invention is formed on at least one side of the base film 3, and a radiation-curable adhesive layer 5 is formed. The base film 3 is not particularly limited as long as it is used for a general semiconductor processing tape. However, in the dicing tape 1 for semiconductor processing of the present invention, it is necessary to use radiation in order to make the adhesive force at the time of picking lower than that of the adhesive tape. The adhesive layer is irradiated, so it is preferable to have sufficient radiation penetration. Therefore, it is especially suitable to use a plastic film. Typical examples of the material include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, and the like. Polyolefins such as polypropylene, polybutene, polymethylpentene, etc.; ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate ( Random, alternating) copolymer, ethylene-butene copolymerization Polyesters such as ethylene-hexene copolymers, polyurethanes, polyethylene terephthalates, polyethylenimine, polyether ketone, polystyrene, polyvinyl chloride, polyvinylidene chloride, fluororesin, A polymer such as a silicone resin, a cellulose resin, or a crosslinked body thereof.

The film forming method of the base film 3 can be carried out by a conventionally known film forming method. For example, a method such as calendering, casting, inflation, and T-die extrusion can be suitably used.

The thickness of the base film 3 thus obtained is generally from 10 to 300 μm, preferably from about 30 to 200 μm. Further, the base film 3 may be either a single layer film or a multilayer film, or may be a mixed resin in which two or more kinds of the above resins are dry-blended. The multilayer film can be produced by a conventional film lamination method such as a co-extrusion method or a dry build-up method using the above-mentioned resin or the like. Further, the base film 3 can be used without stretching, and it is also necessary to apply one or two axial stretching treatments. On the surface of the base film 3 thus produced, conventional physical or chemical treatment such as roughening treatment, corona discharge treatment, primer treatment, and crosslinking treatment may be applied as necessary.

Next, the radiation-curable adhesive layer 5 in the dicing tape 1 for semiconductor processing will be described. The inventors of the present invention conducted an effort to review the adhesion of the radiation-curable adhesive layer 5 in the dicing tape 1 for semiconductor processing, and found that the adhesion strength was 1.0 to 2.0 N/25 mm. The width of the tape can suppress the scattering of the surrounding wafer during picking up, or the package can be detached from the tape during transportation. On the other hand, it is known that when the adhesion is less than the width of the tape of 1.0N/25mm, the package is often detached from the tape, which is larger than the width of the 2.0N/25mm tape. In this case, the package may not be peeled off from the tape at the time of pickup, resulting in poor pickup.

In addition, the inventors of the present invention have made an effort to review the adhesion strength of the radiation-curable adhesive layer 5 of the dicing tape 1 for semiconductor processing to radiation irradiation under conditions of an atmospheric gas atmosphere. As a result, it was found that by attaching the value to 50 to 150 mN/mm ² , even when the package body produces a rubber ball, it is possible to suppress the package from adhering to the tray or the transfer tube. On the other hand, it was found that if the adhesion peak intensity exceeds 150 mN/mm ² , the adhesive force of the rubber ball becomes strong, and the package is attached to the tray or the transport tube frequently, and if the adhesion peak intensity is less than 50 mN/mm ² , When picking up the package which is independent after cutting, it is easy to cause the surrounding wafer to be scattered when the needle is pushed up, or the package is detached from the tape when temporarily stored or transported after picking up.

In addition, in general, the encapsulating resin has minute irregularities on the surface, and in the case of a package having small irregularities, the adhesive layer must have sufficient adhesive force, and the adhesive layer can be maintained in the case of a package having a large unevenness. Must have sufficient adhesion peak strength. Therefore, it is desirable that the radiation-curable adhesive layer 5 of the dicing tape 1 for semiconductor processing of the present invention has a tape width of 5.0 to 10.0 N/25 mm before irradiation with respect to the radiation of SUS304 according to JIS Z0237, and radiation irradiation. The peak adhesion of the former probe adhesion is 250 to 750 mN/mm ² . By making the adhesion force and the adhesion peak intensity before the irradiation of the radiation into such a range of values, even when processing is performed using various packages, the package can be firmly held, and the cutting can be prevented from being independent. The scattering of the package. On the other hand, if the adhesion force before the irradiation of the radiation ‧ the adhesion strength is too low, the package is easily scattered at the time of cutting, and if it is too high, the residual glue at the time of peeling or the substrate and the adhesive are likely to occur. The interface is peeled off.

In view of the results of the review by the inventors of the present invention, the adhesive layer 5 of the dicing tape 1 for semiconductor processing of the present invention will be described. This adhesive layer 5 is composed of a resin composition containing an acrylic polymer as a base polymer. This is because acrylic polymers are generally excellent in reducing the contamination of semiconductor wafers or packages. Further, the adhesive layer 5 of the dicing tape 1 for semiconductor processing of the present invention is adhered to a semiconductor component (semiconductor wafer) since the package is prevented from scattering during dicing and the peeling property of the package is improved at the time of picking up. When the adhesive is used, it has a sufficient adhesive force to prevent the wafer from being peeled off, and the adhesive force is lowered when it is picked up. That is, as the adhesive layer 5, a radiation-curable adhesive layer which is cured by ultraviolet rays, electron beams or the like can be used.

The radiation curable adhesive layer 5 is composed of a resin composition containing an acrylic polymer as a base polymer. Further, it is a radiation curable functional group having a carbon-carbon double bond or the like. Specifically, a monomer composition or an oligomer component (hereinafter, referred to as a radiation curable component) of a radiation curing type is prepared by a resin composition containing an acrylic polymer. Or as a base polymer, with an acrylic polymer as the basic structure, and in the side chain or main chain of the polymer, or having a carbon-carbon double bond at the end of the main chain.

First, as the acrylic polymer, for example, a polymer of an alkyl (meth)acrylate is used, or it is necessary to adhere or coagulate as necessary. A copolymer of a copolymerizable monomer to an alkyl (meth)acrylate is intended for the purpose of modifying the strength, heat resistance and the like. Further, the term "(meth)acrylate" means acrylate and/or methacrylate, and (meth) in the present specification means the same meaning. Examples of the alkyl ester group of the alkyl (meth)acrylate include a methyl ester, an ethyl ester, a butyl ester, 2-ethylhexyl ester, pentyl ester, and isodecyl ester.

In general, the adhesion or adhesion peak strength can be controlled by adjusting the length of the side chain while adjusting the main chain structure of the base polymer. Therefore, in the dicing tape 1 for semiconductor processing of the present invention, the acrylic polymer constituting the base polymer may be, for example, a copolymerizable monomer, and may be a hydroxyalkyl ester having (meth)acrylic acid (for example, hydroxyethyl ester). , hydroxybutyl ester, hydroxyhexyl ester, etc.), (meth)acrylic acid epoxypropyl ester, (meth)acrylic acid, itaconic acid, maleic anhydride, (meth)acrylamide, (meth)acrylic acid N - hydroxymethyl decylamine, alkylaminoalkyl (meth) acrylate (such as dimethylaminoethyl methacrylate, tributylaminoethyl methacrylate, etc.), N-vinylpyrrolidone, Propylene morpholine, vinyl acetate, styrene, acrylonitrile, and the like. These copolymerizable monomers can be used alone or in combination of two or more. Further, in order to crosslink the acrylic polymer, a polyfunctional monomer may be contained as a comonomer component as necessary.

The acrylic polymer which is a resin composition constituting the adhesive layer is preferably one containing methyl acrylate and 2-ethylhexyl acrylate. This is because it is expected to achieve adhesion and adhesion by copolymerizing methyl methacrylate with a high glass transition temperature of the homopolymer and copolymerization with 2-ethylhexyl acrylate having a low glass transition temperature of the homopolymer. The control of the peak intensity becomes easy.

The acrylic polymer is obtained by polymerizing a single monomer or a mixture of two or more kinds of monomers. The polymerization reaction may be carried out in any one of solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, and the like. Further, the adhesive layer is preferably one having a small content of a low molecular weight material from the viewpoint of preventing contamination of a semiconductor wafer or the like. Therefore, the weight average molecular weight of the acrylic polymer is 200,000 or more, preferably about 200,000 to 3,000,000, more preferably about 500,000 to 3,000,000.

Next, the radiation-curable adhesive layer 5 as a radiation-curable component blended with the resin composition containing an acrylic polymer is provided so that the dicing tape and the semiconductor can be easily peeled off at the time of the pick-up step. The characteristics are not particularly limited, and examples of the monomer component or the oligomer component include trimethylolpropyl tri(meth)acrylate, pentaerythritol tri(meth)acrylate, and di(methyl). (meth)acrylic acid such as tetraethylene glycol acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and the like Polyester ester compound; acrylate oligomer; 2-propyl-3-butyl cyanate, isomeric cyanurate (2-propenyloxyethyl) ester, etc. Or an isomeric cyanurate compound or the like. The radiation-curable component may be used singly or in combination of two or more.

The amount of the radiation-hardening type component is not particularly limited. However, in consideration of the pick-up, that is, after the irradiation of the radiation, the adhesion of the peeling is lowered, so that the adhesion force with respect to SUS304 according to JIS Z0237 is 90. In the peeling test, the tape width is 1.0 to 2.0 N/25 mm, and it is preferably 25 to 150 parts by mass with respect to 100 parts by mass of the acrylic copolymer. If radiation hardens If the amount of the component is too small, the adhesion cannot be sufficiently reduced at the time of picking up. If the radiation curing component is too much, the package is detached from the tape, and the surrounding wafer is scattered during the pickup step.

Next, a case where a carbon-carbon double bond is introduced into the above acrylic polymer will be described. The method of introducing a carbon-carbon double bond into an acrylic polymer includes a functional group in a side chain of the polymer, and a compound having a functional group capable of undergoing an addition reaction with a carbon-carbon double bond is added. The method of formation. In the case of a compound having a functional group capable of undergoing an addition reaction in a side chain of an acrylic compound, when the side chain to be subjected to the addition reaction is a carboxyl group, a glycidyl methacrylate or an allyl group may be mentioned. When the target of the addition reaction is an epoxy group, such as epoxy propyl ether or the like, acrylic acid or the like is used, and when the target of the addition reaction is a hydroxyl group, 2-isocyanate is mentioned. Acryloxyethyl ester and the like.

The adhesive layer 5 as described above may contain, for example, a polyfunctional isocyanate compound or an epoxy compound, a melamine compound or a metal salt compound, a metal chelating compound or an amine resin compound or a peroxide. A suitable crosslinking agent is used as a hardener. The hardener is used to crosslink the adhesive layer, and the crosslinking density of the adhesive layer 5 can be controlled by adjusting the content thereof, and the retention of the dicing tape 1 for semiconductor processing can be controlled. The content of the curing agent in the adhesive layer 5 is not particularly limited, but is preferably 0.1 to 10 parts by mass based on 100 parts by mass of the base polymer. Further, the radiation-curable adhesive used in the present invention may contain conventional additives such as various conventionally known various adhesives, anti-aging agents, fillers, and colorants as necessary.

Further, the radiation curable adhesive layer 5 as described above may further contain a photopolymerization initiator for curing by ultraviolet rays or the like. Examples of the photopolymerization initiator include benzoin methyl ether, benzoin propyl ether, benzoin isopropyl ether, and benzoin isobutyl ether; Diketone, benzoin, benzophenone, α-hydroxycyclohexyl phenyl ketone aromatic ketone system; benzoin dimethyl ketal and other aromatic ketal systems; polyethylene benzophenone, chlorine A thioxanthone such as thioxanthone, dodecyl thioxanthone, dimethyl thioxanthone or diethyl thioxanthone. The amount of the photopolymerization initiator to be added is not particularly limited, and may be 0.1 to 10 parts by mass, preferably 0.5 to 10 parts by mass, per 100 parts by mass of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive layer 5. unit.

Further, in the dicing tape 1 for semiconductor processing of the present invention, the glass transition temperature of the resin composition constituting the adhesive layer 5 before the irradiation of the radiation is desirably -30 to -10 °C. If the glass transition temperature is too low, the cohesive force of the adhesive becomes low, so that when the package is cut, it becomes easy to cause the curl of the adhesive layer 5, and the rubber ball is attached to the independent package. . On the other hand, if the glass transition temperature is too high, there is a case where the wafer holding power in the cutting step is insufficient, and wafer scattering or package ejection occurs, so that the yield ratio of the product is easily deteriorated.

Moreover, such a glass transition temperature ranges by the polymer structure of the base polymer in the resin composition constituting the adhesive layer 5, the molecular weight, the formulated radiation hardening component, the hardener, and the photopolymerization initiation. The type or amount of the agent, the adhesive, the anti-aging agent, the filler, or the colorant is appropriately adjusted.

The dicing tape 1 for semiconductor processing of the present invention is obtained by directly applying an adhesive solution on the surface of the base film 3, drying it, or crosslinking it by heating as necessary to form an adhesive layer as described above. At this time, the thickness of the adhesive layer 5 of the dicing tape 1 for semiconductor processing is desirably 10 to 30 μm. When the adhesive layer 5 is less than 10 μm, the wafer cannot be sufficiently held at the time of dicing, and when the adhesive layer 5 is thicker than 30 μm, peeling of the wafer or residual glue on the side of the package is increased.

Further, the dicing tape 1 for semiconductor processing of the present invention can be produced by attaching the release paper 7 to the surface of the adhesive layer 5 as necessary. Alternatively, a method in which the adhesive layer 5 is formed on the release paper 7 and then attached to the base film 3 may be employed. Further, these adhesive layers 5 may be one layer or two or more layers.

Further, the release paper 7 is provided for the purpose of protecting the adhesive layer, for the purpose of label processing, or for the purpose of smoothing the adhesive. The constituent material of the release paper 7 is a synthetic resin film such as paper, polyethylene, polypropylene, or polyethylene terephthalate. On the surface of the release paper 7, in order to improve the peelability of the self-adhesive layer 5, it is necessary to carry out a peeling treatment such as a helium oxygen treatment, a long-chain alkyl treatment, or a fluorine treatment. Further, if necessary, in order to prevent the dicing tape 1 for semiconductor processing from reacting due to ambient ultraviolet rays, it is also possible to perform ultraviolet protection treatment. The thickness of the release paper 7 is usually from 10 to 200 μm, preferably from about 25 to 100 μm.

The dicing tape 1 for semiconductor processing as described above can be suitably formed into a sheet shape or a roll shape depending on the application. It is also possible to use a person who has been cut into a necessary shape in advance.

The dicing tape 1 for semiconductor processing of the present invention is diced in accordance with a general method after being adhered to a semiconductor component as a object to be cut. Examples of the semiconductor component include a germanium semiconductor, a compound semiconductor, a semiconductor package, glass, ceramics, and the like. The dicing tape 1 for semiconductor processing of the present invention is particularly used for the step of cutting a semiconductor package. In the cutting step, generally, the blade is rotated at a high speed to cut the cut body to a predetermined size. By using the dicing tape 1 for semiconductor processing of the present invention, a cutting method called a dicing tape 1 for cutting semiconductor processing which is called full cutting can be employed in the dicing step.

After the dicing, the pick-up step is usually performed, but the adhesive layer 5 of the dicing tape 1 for semiconductor processing is hardened by radiation irradiation to reduce the adhesiveness. Thereby, it is easy to peel off a semiconductor component from the dicing tape 1 for semiconductor processing. In addition, in the picking step, an extending step can be set. Further, the means for irradiating the radiation is not particularly limited, and for example, it can be carried out by ultraviolet irradiation or the like.

According to the following examples, it is understood that the adhesive layer constituting the dicing tape 1 for semiconductor processing of the present invention has the following characteristics.

The adhesive layer 5 is a base polymer composed of a resin composition containing an acrylic polymer containing methyl acrylate and 2-ethylhexyl acrylate as a monomer component, and the glass transition temperature of the resin composition is -30. ~-11 ° C is better.

Further, the thickness of the adhesive layer 5 is preferably 10 to 30 μm.

The adhesion of the adhesive layer 5 to the radiation of SUS304 according to JIS Z0237 is preferably 1.0 to 1.9 N/25 mm tape width at the 90° peel test, and the adhesive layer 5 is in an atmospheric gas atmosphere. The probe adhesion peak intensity after radiation irradiation is preferably 54 to 148 mN/mm ² .

The adhesion of the adhesive layer 5 to the radiation of SUS304 according to JIS Z0237 is preferably 5.3 to 9.7 N/25 mm tape width at the 90° peel test, and the adhesive layer 5 is in an atmospheric gas atmosphere. the probe prior to irradiation adhesion that the peak intensity 253 ~ 723mN / mm ² preferably.

Example

Hereinafter, the present invention will be further described in detail based on examples, but the present invention is not limited by the examples.

[Substrate film]

As the base film, a linear low-density polyethylene having a thickness of 150 μm was used. One side of the film has been corona treated.

[acrylic polymer] ‧Base polymer A~E

Methyl acrylate, 2-ethylhexyl acrylate, methacrylic acid, and 2-hydroxyethyl acrylate were used as a raw material, and polymerization was carried out at a mixing ratio (mass portion) shown in Table 1 below to obtain a substrate containing an acrylic polymer. polymer.

‧Base polymer F~H

Methyl acrylate, 2-ethylhexyl acrylate, methacrylic acid, and 2-hydroxyethyl acrylate were used as a raw material, and polymerization was carried out at a mixing ratio (mass portion) shown in Table 1 below. Further, a propylene-based base polymer having a carbon-carbon double bond at the side of the side chain is obtained by subjecting 2-methylpropenyloxyethyl isocyanate to an addition reaction.

Furthermore, as a mass part of the base polymer 100, it is added as CORONATE L (trade name) 1 mass part of NIPPON POLYURETHANE INDUSTRY CO., LTD. manufactured by CIBA-GEIGY Co., Ltd. as a photopolymerization initiator, IRUGACURE 184 (trade name) (α-hydroxyl) 5.0 parts by mass of cyclohexyl phenyl ketone was mixed to prepare a resin composition constituting the adhesive layer.

<Example 1>

The radiation hardening type oligomer (the average content of each of the carbon-carbon double bonds of 6 molecules) obtained by reacting pentaerythritol triacrylate with diisocyanate is 50 parts by mass with respect to the mass portion of the base polymer B100. The polyisocyanate compound (manufactured by NIPPON POLYURETHANE INDUSTRY CO., LTD., trade name: CORONATE L) 2 mass parts, photopolymerization initiator (manufactured by CIBA SPECIALTY CHEMICALS, trade name IRUGACURE 651) , obtaining an adhesive composition.

The obtained adhesive composition was applied to the corona-treated surface of the base film so as to have a thickness of 20 μm to prepare a dicing tape for semiconductor processing.

<Example 2>

A dicing tape for semiconductor processing was obtained in the same manner as in Example 1 except that the base polymer in the adhesive composition was changed to C.

<Example 3>

A dicing tape for semiconductor processing was obtained in the same manner as in Example 2 except that the blending ratio of the radiation-curable oligomer was changed to 25 parts by mass.

<Example 4>

A semiconductor was obtained in the same manner as in Example 1 except that the base polymer in the adhesive composition was changed to D, and the blending ratio of the radiation hardening oligomer with respect to the D100 mass portion was changed to 100 mass portions. Cutting tape for processing.

<Example 5>

A dicing tape for semiconductor processing was obtained in the same manner as in Example 4 except that the blending ratio of the radiation-curable oligomer was changed to 50 parts by mass.

<Example 6>

A dicing tape for semiconductor processing was obtained in the same manner as in Example 4 except that the blending ratio of the radiation-curable oligomer was changed to 25 parts by mass.

<Example 7>

In the mass part of the base polymer G100, a polyisocyanate compound (manufactured by NIPPON POLYURETHANE INDUSTRY CO., LTD., trade name: CORONATE L) is used as a curing agent, and a photopolymerization initiator (manufactured by CIBA SPECIALTY CHEMICAL CO., LTD. The blending ratio of the mass fraction of IRUGACURE 651) is mixed to obtain an adhesive composition.

The obtained adhesive composition was applied to the corona-treated surface of the base film so as to have a thickness of 20 μm to prepare a dicing tape for semiconductor processing.

<Example 8>

A dicing tape for semiconductor processing was obtained in the same manner as in Example 7 except that the base polymer in the adhesive composition was changed to H.

<Example 9>

A dicing tape for semiconductor processing was obtained in the same manner as in Example 7 except that the thickness of the adhesive layer was changed to 10 μm.

<Example 10>

A dicing tape for semiconductor processing was obtained in the same manner as in Example 7 except that the thickness of the adhesive layer was changed to 30 μm.

<Comparative Example 1>

A semiconductor was obtained in the same manner as in Example 1 except that the base polymer in the adhesive composition was changed to A, and the blending ratio of the radiation hardening oligomer with respect to the mass portion of A100 was changed to 100 mass portions. Cutting tape for processing.

<Comparative Example 2>

A dicing tape for semiconductor processing was obtained in the same manner as in Comparative Example 1, except that the blending ratio of the radiation-curable oligomer was changed to 50 parts by mass.

<Comparative Example 3>

A dicing tape for semiconductor processing was obtained in the same manner as in Comparative Example 1, except that the blending ratio of the radiation curable oligomer was changed to 25 parts by mass.

<Comparative Example 4>

A semiconductor was obtained in the same manner as in Example 1 except that the base polymer in the adhesive composition was changed to B, and the blending ratio of the radiation hardening oligomer with respect to the B100 mass portion was changed to 100 mass portions. Cutting tape for processing.

<Comparative Example 5>

A dicing tape for semiconductor processing was obtained in the same manner as in Comparative Example 4 except that the blending ratio of the radiation curable oligomer was changed to 25 parts by mass.

<Comparative Example 6>

A dicing tape for semiconductor processing was obtained in the same manner as in Example 2 except that the blending ratio of the radiation curable oligomer to the mass portion of the base polymer C100 was changed to 100 parts by mass.

<Comparative Example 7>

A semiconductor was obtained in the same manner as in Example 1 except that the base polymer in the adhesive composition was changed to E, and the blending ratio of the radiation hardening oligomer with respect to the E100 mass portion was changed to 100 mass portions. Cutting tape for processing.

<Comparative Example 8>

A dicing tape for semiconductor processing was obtained in the same manner as in Comparative Example 7, except that the blending ratio of the radiation-curable oligomer was changed to 25 parts by mass.

<Comparative Example 9>

In the mass part of the base polymer F100, a polyisocyanate compound (manufactured by NIPPON POLYURETHANE INDUSTRY CO., LTD., trade name: CORONATE L) is used as a curing agent, and a photopolymerization initiator (manufactured by CIBA SPECIALTY CHEMICAL CO., LTD. name The mixing ratio of IRUGACURE 651) 3 mass parts was mixed to obtain an adhesive composition.

The obtained adhesive composition was applied to the corona-treated surface of the base film so as to have a thickness of 20 μm to prepare a dicing tape for semiconductor processing.

<Comparative Example 10>

A dicing tape for semiconductor processing was obtained in the same manner as in Example 7 except that the thickness of the adhesive layer was changed to 7 μm.

<Comparative Example 11>

A dicing tape for semiconductor processing was obtained in the same manner as in Example 7 except that the thickness of the adhesive layer was changed to 33 μm.

The following evaluations were performed on the dicing tape for semiconductor processing obtained in the above examples and comparative examples. The evaluation results of the examples are shown in Table 2, and the evaluation results of the comparative examples are shown in Table 3.

[Test 1: Adhesion measurement (before radiation exposure)]

Three sets of test pieces each having a width of 25 mm and a length of 300 mm were taken from each dicing tape for semiconductor processing, and these were adhered to a thickness of 1.5 mm to 2.0 mm as specified in JIS G 4305 for surface treatment of No. 280 water-resistant sandpaper specified in JIS R 6253. After SUS304 steel plate was rolled back and forth three times with a 2 kg rubber roller, and the pressure was pressed for 1 hour, and the adhesion was measured using a tensile tester suitable for JIS B 7721 using a measured value in the range of 15 to 85% of the capacity. The measurement was based on the 90° peeling method, and the pulling speed at this time was 50 mm/min. The measurement temperature was 23 ° C, and the measured humidity was 49%.

[Test 2: Determination of adhesion (after radiation exposure)]

The sample prepared in the same manner as in Test 1 was irradiated with ultraviolet rays at 200 mJ/cm ² , and allowed to stand for 1 hour after the irradiation, and the adhesion was measured in the same manner as in Test 1.

[Test 3: Determination of adhesion peak intensity (before radiation exposure)]

Three test pieces of 25 mm wide and 300 mm long were taken from each dicing tape for semiconductor processing, and the adhesion peak intensity of the adhesive layer on the adherend side was measured using a tape instant adhesion tester TAC-II manufactured by RHESCA Co., Ltd. . The measurement conditions are as follows.

Probe: 3mmΦ cylindrical

Probe contact speed: 0.5mm/s

Contact load: 694mN/mm ²

Contact time: 10 seconds

Peeling speed: 10mm/s

Measuring temperature: 25 ° C

The result was an average value of n=5.

[Test 4: Determination of adhesion peak intensity (after radiation exposure, ‧ in atmospheric gas environment)]

The sample prepared in the same manner as in Test 1 was irradiated with ultraviolet light at 200 mJ/cm ² in an atmospheric gas atmosphere using a high-pressure mercury lamp, and allowed to stand for 1 hour after the irradiation, and the probe adhesion peak intensity was evaluated in the same manner as in Test 3.

[Test 5: Determination of glass transition temperature (Tg) of adhesive]

The dicing tape for semiconductor processing before irradiation of the radiation was immersed in methanol, and after the adhesive layer was swollen, the adhesive composition was peeled off from the base film by a single-edged knife. Put the obtained adhesive composition into an aluminum container so that The glass transition temperature was measured using a differential scanning calorimeter (DSC) model RDC220 manufactured by SEIKO INSTRUMENTS Co., Ltd. The measurement conditions are as follows.

Temperature range: -90~60°C

Heating rate: 10 ° C / min

Weight: 10mg

N ₂ gas flow: 40ml/min

Reference: Al ₂ O ₃

[Evaluation 1: Retention force test during cutting]

A 0.5 mm thick 191 mm × 51 mm copper wire frame substrate package was adhered to each of the semiconductor processing dicing tapes at 23 ° C and 50% RH, and cut into 3 mm × 3 mm squares after one hour from the adhesive tape. . The cutting conditions are as follows.

Cutting device: DDAC-340 made by DISCO

Blade: DISCO company's metal bonding blade (B1A801SD 320N100M42, inner diameter 40mm, outer diameter 58mm, thickness 0.2mm)

Blade speed: 30000rpm

Cutting speed: 50mm/sec

Tape cutting depth: 0.08mm

Cutting water volume: flow rate 2L/min

Cutting water temperature: 23 ° C

After the dicing, the ring frame was visually confirmed, and when the number of independent packages was not more than five, it was evaluated as "x", and when one or more of four or less were not found, the evaluation was "△", and if not, the number was Zero is evaluated as "○".

[Evaluation 2: Retention force test after radiation exposure (wafer scattering)]

After the dicing of Evaluation 1, ultraviolet ray irradiation was performed at 200 mJ/cm ² using a high pressure mercury lamp, and an independent package was picked up. The pickup conditions are as follows.

Pickup device: CAP-300II manufactured by CANON MACHINERY

Push the needle shape: radius 0.7mm, tip radius of curvature R=0.25mm tip θ=15

Needle push height: 1mm

Needle push speed: 50mm/sec

Collet shape: adsorption hole 0.89mmφ

Ring frame: Model DTF-2-6-1 (made by SUS420J2) manufactured by DISCO Corporation

50 packages which were independent of the above conditions were picked up to visually confirm the wafer scattering in the vicinity of the pick-up place. It was not confirmed that the wafer arrangement in the vicinity of the pick-up site was disturbed, and the scatterer was evaluated as "○". The arrangement was disturbed but remained on the adhesive tape, and the collectable person was evaluated as "△", and the person who was scattered on the adhesive tape was evaluated as "X".

[Evaluation 3: Adhesion to the tray]

50 packages which were independent of the above conditions were picked up, and the number of packages in which the picked-up package was attached to the ABS resin tray and the package was not dropped even if the disk was reversed was counted. When there is no attached package, it is evaluated as "○", and when it is less than one, it is evaluated as "△", and in the case of ten or more, it is evaluated as "x".

It can be confirmed from Table 2 that in the dicing tape for semiconductor processing, the thickness of the adhesive layer is 10 to 30 μm, and the adhesion of the adhesive layer after irradiation with radiation is 1.0 to 2.0 N/ at the 90° peeling test. 25mm tape width, and the probe adhesion peak intensity after irradiation of the atmospheric gas environment is 50~150mN/mm ² (Examples 1~10), high retention of the package can be obtained during cutting Force, picking up the package after radiation exposure will not cause disorder. Furthermore, the package being picked up does not adhere to the tray. In this case, it is considered that the adhesive layer of the dicing tape for semiconductor processing of the present invention is difficult to leave a rubber ball on the package at the time of cutting, and even in the case where the rubber ball is attached, it can be performed before picking up. The way the radiation is irradiated causes the adhesive layer to harden while maintaining moderate adhesion.

Further, the adhesive layer is a radiation curable type which is composed of a resin composition containing an acrylic polymer as a base polymer, and is formulated with a radiation curable component in a resin composition containing an acrylic polymer. (Examples 1 to 6), or an acrylic polymer as a basic structure, and having a carbon-carbon double bond in the side chain or main chain of the polymer or at the end of the main chain (Examples 7 to 10) ) can also get the same result.

On the other hand, in the dicing tape for semiconductor processing, even if the thickness of the adhesive layer is 10 to 30 μm, the adhesion force after the irradiation of the adhesive layer is less than 1.0 N/25 mm when the 90° peeling test is performed. In the case of the width (Comparative Examples 1, 4, 6, 7, and 9), although it does not adhere to the tray after the pickup step, the wafer is frequently scattered. In this case, it is considered that the adhesive layer is hardened due to radiation irradiation, and the pickup cannot be maintained. The necessary adhesion, resulting in poor pickup.

Further, the adhesion force after the irradiation of the radiation layer of the adhesive layer exceeded the 2.0 N/25 mm tape width in the 90° peel test (Comparative Examples 3, 5, and 8), although wafer scattering did not occur, Frequent occurrences of attachment to the tray after the picking step. In this case, it is indicated that the degree of hardening of the adhesive layer is not sufficient after the irradiation of the radiation, and the pickup step is performed in a state where the adhesion is too high.

Furthermore, in the case where the adhesion peak intensity of the probe after the irradiation of the adhesive layer in the atmospheric gas atmosphere is less than 50 mN/mm ² (Comparative Examples 6, 7), it is found that the wafer is scattered in the pickup step. . In this case, it is considered that the adhesive layer is excessively hardened by the irradiation of the radiation, and sufficient adhesion cannot be obtained, resulting in poor pickup. On the other hand, in the case where the probe adhesion peak intensity exceeds 150 mN/mm ² after radiation irradiation under atmospheric gas conditions (Comparative Examples 2, 3, 5, and 11), package attachment frequently occurs after the pickup step. The situation on the tray. In this case, it can be considered that after the irradiation of the radiation, the degree of hardening of the adhesive layer is still insufficient, so that the adhesion is in an excessively high state, so that the package is firmly attached to the tray due to the rubber ball attached to the package. reason.

In addition, even after the radiation of the adhesive layer, the adhesion force is 1.0 to 2.0 N/25 mm tape width in the 90° peel test, and the probe adhesion peak intensity after the irradiation of the atmospheric gas atmosphere is In the case of 50 to 150 mN/mm ² , when the thickness of the adhesive layer was less than 10 μm (Comparative Example 10), the scattering of the package was confirmed at the time of cutting. Thereby, it was confirmed that the thickness of the adhesive layer must be 10 μm or more in order to obtain sufficient retainability at the time of cutting.

In addition, the adhesion force before the irradiation of the adhesive layer is less than 5.0N/25mm tape width in the 90° peeling test, or the probe adhesion peak intensity before the radiation irradiation is less than 250mN/mm ² (Comparative Examples 1, 2, 3, 7, 8, and 10) It was confirmed that the package could not be sufficiently held at the time of cutting. In particular, even before the radiation of the adhesive layer is irradiated, it is in the range of 5.0 to 10.0 N/25 mm tape width (Comparative Example 7, 10) or over 10.0 N/25 mm tape in the 90° peel test. In the case of the width (Comparative Example 8), as long as the probe adhesion peak intensity before the irradiation of the radiation was less than 250 mN/mm ² , the retention at the time of cutting was insufficient, which was inferior to the dicing tape for semiconductor processing of the present invention.

Further, in Examples 1 to 6 and Comparative Examples 1 to 8 in which an adhesive composition of a radiation curable oligomer was added to a base polymer, radiation was irradiated with the glass transition temperature of the adhesive as a horizontal axis. Before the adhesion and adhesion peak intensity mapping, it can be seen that the higher the glass transition temperature, the stronger the adhesion before the radiation, and the weaker the adhesion peak strength. In particular, in the case of Comparative Example 3, Example 6, Comparative Example 3, Comparative Example 5, and Comparative Example 8 in which the oligomer blending ratio was 25 parts by mass, the comparative oligomer blending ratio was 50 parts by mass. In the case of Example 1, Example 2, Example 5, and Comparative Example 2, Example 4, Comparative Example 1, Comparative Example 4, Comparative Example 6, and Comparative Example 7 in which the oligomer preparation ratio was 100 mass portions. In the case of this, the correlation is more explicit.

Although the embodiments of the present invention have been described above, the present invention is not limited by the related embodiments. As long as it is technology in the field It is apparent that various modifications and alterations are conceivable within the scope of the technical idea disclosed in the present disclosure, and it is of course also within the technical scope of the present invention.

1‧‧‧Semiconductor wafer processing tape

3‧‧‧Substrate film

5‧‧‧Adhesive layer

7‧‧‧ release paper

Claims (1)

A dicing tape for semiconductor processing, which is used for cutting a semiconductor package, characterized in that a radiation-curable adhesive layer is formed on at least one side of a base film; and the adhesive layer is made of acrylic The polymer is composed of a resin composition of a base polymer containing methyl acrylate and 2-ethylhexyl acrylate as a monomer component; and the glass transition temperature of the resin composition is -30 to -11 °C; the thickness of the adhesive layer is 10 to 30 μm; the adhesion of the adhesive layer to the radiation of SUS304 according to JIS Z0237 is 1.0 to 1.9 N/25 mm tape width when subjected to the 90° peel test; the adhesive layer after irradiation of the radiation intensity of the peak adhesion probe 54 ~ 148mN / mm ^2; with the adhesive layer when the adhesive force with respect to a front of SUS304 JIS Z0237 radiation irradiation, during 90 ° peel test The tape width is 5.3~9.7N/25mm; and the peak adhesion of the probe before the radiation of the adhesive layer is 253~723mN/mm ² .